admin-icmne, Автор в IC - MNE – Страница 2 из 3

Научная программа — 2012

By: admin-icmne

On: 04.05.2023

In: Научная программа

Download in Microwoft Word format (.doc, 300 KB)

Monday, October 1^st, 2012

9.00 — Registration & Accommodation

13.00-14.00 Lunch

Conference Hall

Special Session. Presentations of Hi-Tech Companies

16.00	S1-01	SemiTEq technological equipment for nanoelectronics . *S.I. Petrov¹, A.N. Alexeev¹, D.M. Krasovitsky², V.P. Chaly². 1. SemiTEq JSC, Saint-Petersburg, Russia. 2. Svetlana-Rost JSC, Saint-Petersburg, Russia*.
16.20	S1-02	Structural diagnostics, elemental and characteristic analysis of modern micro- and nanosystems using analytical SEM/FIB tools . *A. Tagachenkov¹, E. Zenova¹, Y. Anufriev¹, V. Dubrovinskiy²* . 1. Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences, Moscow, Russia. 2. JSC «NPO Sernia», Moscow, Russia .
16.40	S1-03	Ultra High Resolution AFM Imaging . *M. Minin. INTERTECH Corp., Moscow, Russia*.
17.00	S1-04	Oxford Instruments Plasma Technology equipment for the micro- and nano- engineering of materials for semiconductor, optoelectronics, MEMS and other applications . *K. Kuvaev, A. Krynin. Technoinfo Limited,* Moscow, Russia.
17.20	S1-05	Novel Vion Plasma FIB system for nano- and micro- electronics application by FEI Company . *A. Poletaev, I. Bredikhin. Technoinfo Limited, Moscow, Russia*.
17.40	S1-06	Modern semiconductor equipment for metrology and failure analysis by Hitachi High Technologies . *E. Kremer* . JSC InterLab, Moscow, Russia .

18.00 Welcome Party

19.00 Dinner

Tuesday, October 2^nd, 2012

8.15 Breakfast

Conference Hall

8.50. WELCOME REMARKS

E.P. Velikhov, Conference Chair, RSC «Kurchatov Institute», Moscow

A.A. Orlikovsky, Program Committee Chair, IPT RAS, Moscow

Plenary Session I

Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia

9.00	L1-01	INVITED: New materials and structures in future ULSI generation . *A. Orlikovsky,* *V. Vyurkov* . Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia .
9.40	L1-02	INVITED: New devices and materials for ultra low power operation . *F. Balestra* . Sinano Institute, IMEP-Minatec (CNRS-Grenoble INP, UJF), France .
10.20	L1-03	INVITED: SiGe and Ge: selective epitaxial growth and application in advanced MOS devices. A. Hikavyy, B. Vincent, W. Vanherle, J. Dekoster, L. Witters, H. Bender, A. Thean, R. Loo. IMEC, Leuven, Belgium.
11.00	L1-04	INVITED: Bumpless interconnects technology for wafer-based three-dimensional integration (3DI). T. Ohba. Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo.

11.40-12.00 Coffee break. Winter garden

Conference Hall

Plenary Session II. Quantum Informatics I

Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia

12.00	qL-01	INVITED: Dressed state amplification by a superconducting qubit. G. Oelsner^a, P. Macha^a, E. Ilichev^a, U. Huebner^a, H.-G. Meyer^a, M. Grajcar^b, O. Astafiev^c. ^a Institute of Photonic Technology, Jena, Germany. ^bDepartment of Experimental Physics, Comenius University, Bratislava, Slovakia, ^cNEC Nano Electronics Research Laboratories. Tsukuba, Ibaraki, Japan .
12.30	qL-02	INVITED: Quantum correlations: entanglement and discord in the simplest physical systems. E.B. Fel’dman, E.I. Kuznetsova, M.A. Yurishchev, A.I. Zenchuk. Institute of Problems of Chemical Physics, Chernogolovka, Russia .
13.00	qL-03	INVITED: Fingerprinting based algorithms for quantum branching programs. F. Ablayev^1,2. 1. Institute for Informatics of Tatarstan Academy of Sciences, Kazan, Russia. 2. Kazan Federal University, Kazan, Russia .
13.30	qL-04	INVITED: Mathematical modeling of quantum noise and the quality of hardware components of quantum computers. *Yu.I. Bogdanov* ¹ *, A.Yu. Chernyavskiy¹, A.S. Holevo², V.F. Luckichev¹, S.A. Nuyanzin^1,3, A.A. Orlikovsky ¹.* ¹ Institute of Physics and Technology, Russian Academy of Sciences. ² Steklov Mathematical Institute, Russian Academy of Sciences. ³ National Research University of Electronic Technology MIET .

14.00-14.40 Lunch

Conference Hall

Session 1. Micro- and Nanodevices I

Session Chairman: Vladimir Vuyrkov, Institute of Physics and Technology, RAS, Russia

14.40	O1-01	INVITED: Qualification of deep-submicron OTP poly-fuse memory. *N. Belova* ¹ *, D. Allman¹, S. Tibbitts²* . 1. ON Semiconductor, Phoenix, AZ, USA. 2. Jet City Electronics Inc., Seattle, WA, USA.
15.10	O1-02	Recording of information in nanostructures of transition metal silicides . *A.S. Sigov¹, B.M. Darinskiy³, L.A. Bityutskaya², O.V.Ovchinnikov², M.S.Smirnov², M.V.Grechkina², A.P.Lazarev³, G.A.Veligura⁴, A.V.Tuchin³, E.V.Bogatikov ³* . 1. MIREA,Moscow, Russia. 2. VSU, Voronezh, Russia. 3. Rosbiokvant Ltd., Voronezh, Russia. 4. Scientific Research Institute of Electronic Engineering, Voronezh, Russia .
15.30	O1-03	Study of the resistive switching mechanism in Pt/ZrO_x/HfO₂/p⁺⁺-Si stacks by hard X-ray photoelectron spectroscopy . *Yu. Matveyev ¹ , A. Zenkevich¹, Yu. Lebedinskii¹, S. Thiess², W. Drube²* . 1. NRNU «Moscow Engineering Physics Institute», Moscow, Russia. 2. Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany.
15.50	O1-04	*Switching of domains in ferroelectric domain boundary. B.M. Darinskiy¹, A.P. Lazarev², A.S. Sigov³.* 1. VSU, Voronezh, Russia. 2. Rosbiokvant Ltd., Voronezh, Russia. 3. MIREA, Moscow, Russia .

Auditorium A

Session 2. Quantum Informatics II

Session Chairman: Sergey Kulik, Moscow State University, Russia

14.40	q1-01	Quantum correlations (entanglement, discord), quantum phase transitions, and magnetic toroidal states in an anti-ferromagnetic XXZ chain of spins S= ? in the presence of an inhomogeneous transverse magnetic field. *A.A. Kokin* . Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia
15.10	q1-02	INVITED: Quantum and classical correlations in high temperature dynamics of two coupled large spins. V.E. Zobov. L.V. Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, Russia .
15.40	q1-03	Quantum computer on multi-atomic ensembles in quantum electrodynamic cavity. F.M. Ablayev *^1,2* *, S.N. Andrianov* *^1,2,3* , *S.A. Moiseev* *^1,2,3* *, A.V. Vasiliev* *^1,2* . 1. Institute for Informatics of Tatarstan Academy of Sciences, Kazan, Russia. 2. Kazan Federal University, Kazan, Russia. 3. Kazan Physical and Technical Institute, Kazan, Russia
16.00	q1-04	Quantum addressing in photon echo based quantum random access memory . *S.A. Moiseev* *^1,2* *, E.S. Moiseev²* . 1. Kazan Physical-technical Institute of Russian Academy of Sciences, Kazan, Russia. 2. Kazan Federal University, Kazan, Russia .

Auditorium B

Session 3. Simulation and Modeling I

Session Chairman: Igor Abramov. Belarus State University of Informatics and Radioelectronics, Minsk, Belarus

14.40	O1-05	T heoretical study of terahertz plasma instability in asymmetric double-grating-gate transistor structures . *A. Satou* ¹ , *H. Shida¹* , *T. Otsuji¹, V.V. Popov²* . 1. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan. 2. Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences, Saratov, Russia .
1 5. 00	O1-06	Voltage-controlled surface plasmon-polaritons in double-graphene structures . *D. Svintsov¹* *, I. Semenikhin¹, V. Vyurkov¹, V. Ryzhii², T. Otsuji²* . 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. 2. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan .
15.20	O1-07	Advanced impact ionization current model for MOS devices including heat effects . *T. Krupkina, D. Rodionov* . National Research University ‘MIET’ , Moscow, Russia .
15.40	O1-08	Electric instability in GaAs/Al_xGa_1-xAs superlattices with barrier layers non-transparent for tunneling. V. Gergel` ¹ , G.Galiev¹, E. Il`ichev², A. Verhovtseva¹, N. Gorshkova¹, A. Zelenyi¹, I. Altu ê *hov¹, S. Paprotskiy¹* . 1. Kotel`nikov Institute of Radio Engineering, RAS, Moscow, Russia. 2. National Research University of Electronic Technology (MIET), Moscow, Russia .
16.00	O1-09	Ionization energy oscillations in metallic and semiconducting nanotubes of ultra small diameters. *A. Ganin, E. Bormontov, L. Bitytskaya* . Voronezh State University, Voronezh, Russia .
16. 20	O1-10	*The brain is a nanoelectronic object. I.I. Abramov.* Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus .

16.40-17.00 Coffee break. Winter garden.

Conference Hall

Session 4. Superconducting Structures and Devices

Session Chairman: Mikhail Kupriyanov, Skobelitsin Institute of Nuclear Physics, Lomonosov Moscow State University, Russia

17 .00	O1-11	Boundary conditions for the contact between normal metal and multiband superconductors with unusual types of pairing . *I. Devyatov, A. Burmistrova* . Lomonosov Moscow State University, Skobeltsin Institute of Nuclear Physics, Moscow, Russia .
17.20	O1-12	New method for calculation of the electron transport in heterostructures with different unusual types of superconducting pairing . *A. Burmistrova, I. Devyatov* . Lomonosov Moscow State University, Skobeltsin Institute of Nuclear Physics, Moscow, Russia .
17.40	O1-13	Superconducting quantum arrays as electrically small antennas . *I. Soloviev* ¹ *, N. Kolotinsky², N. Klenov², A. Sharafiev², V. Kornev², O. Mukhanov³* . 1. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 2. Physics Department, Moscow State University. 3. HYPRES, Inc., Elmsford, USA .
18.00	O1-14	*Combined magnetic field sensor with superconductive magnetic field concentrator. L.P. Ichkitidze.* National Research University of Electronic Technology «MIET», MIET, Zelenograd, Moscow, Russia .
18.20	O1-15	Comparative parameters of superconductor-based sensors of weak magnetic fields. L.P. Ichkitidze¹, M.L. Gavryushina². 1. National Research University of Electronic Technology «MIET», Zelenograd, Russia. 2. Bazovye Technologii JSC, Moscow, Russia .

Auditorium A

Session 5. Quantum Informatics III

Session Chairman: Sergey Moiseev, Kazan Physical and Technical Institute, RAS, Kazan, Russia

17.00	q1-05	INVITED: *Spatial structure of two-photon and thermal light. S.P. Kulik, S.S. Straupe, I. Bobrov.* Faculty of Physics, Moscow M.V. Lomonosov State University, Moscow, Russia .
17.30	q1-06	Biphoton spectrum control . *N. Borschevskaya¹, I. Dyakonov¹, K. Katamadze^1,2, S. Kulik¹, A. Paterova ¹* . 1. Moscow State University, Moscow, Russia, 2. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia .
17.50	q1-07	Quantization effects observed in asymmetric rings. *V.L. Gurtovoi, A.I. Ilin, A.V. Nikulov, V.A. Tulin* . Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow District, Russia .
18.10	q1-08	Quantum communication with Bose-Einstein condensates . *A.N. Pyrkov* *, T. Byrnes* . National Institute of Informatics, Tokyo, Japan .
18.30	q1-09	Effect of image charges on a space qubit evolution, V. Vyurkov, M. Rudenko, S. Filippov. Institute of Physics and Technology, RAS, Moscow, Russia .

Auditorium B

Session 6. Simulation and Modeling II

Session Chairman: Vladimir Vuyrkov, Institute of Physics and Technology, RAS, Russia

17.00	O1-16	A dynamic simulation model for functionally-integrated injection laser-modulator. B. Konoplev¹, E. Ryndin², M. Denisenko¹. 1. Taganrog Institute of Technology — Southern Federal University, Taganrog, Russia. 2. Souther Scientific Center of RAS, Rostov-na-Donu, Russia .
17.20	O1-17	Computationally efficient methods for optical simulation of solar cells and their applications. M. Zanuccoli¹, I. Semenikhin², V. Vyurkov², E. Sangiorgi¹, C. Fiegna¹. 1. ARCES-DEI University of Bologna & IUNET, Cesena (FC), Italy. 2. Institute of Physics and Technology, RAS, Moscow, Russia .
17.40	O1-18	Optical absorption of silicon layer with incorporated nano-voids and metal nanoparticles . V. *Shautsova,* P. *Gaiduk* . Belarusian State University, Minsk, Belarus.
18.00	O1-19	Simulation of resonant tunneling devices based on different materials . *I.I. Abramov, N.V. Kolomejtseva, I.A. Romanova, A.G. Klimovich. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus*.
18.20	O1-20	*Electronic structure of magnetic nanoclusters of cobalt and nickel silicides. A. Tuchin* ¹, L. Bityutskaya¹, A. Lazarev², A. Sigov³.** 1. Voronezh State University, Voronezh, Russia. 2. «Rosbiokvant» Ltd.,Voronezh, Russia. 3. MIREA, Moscow, Russia .

19.00 Dinner

Wednesday, October 3^rd 2012

8.15 Breakfast

Conference Hall

Plenary Session III

Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia

09.00	L2-01	INVITED: Graphene-based infrared and terahertz detectors: Concepts, features, and comparison . *V. Ryzhii* ¹ *, T. Otsuji¹, M. Ryzhii², V. Mitin³, M.S. Shur⁴* . ¹ Tohoku University, Sendai, Japan. ² University of Aizu, Aizu-Wakamatsu, Japan. ³University at Buffalo, SUNY, Buffalo, USA, ⁴ Rensselaer Polytechnic Institute, Troy, USA .
09.40	L2-02	INVITED: Terahertz-wave generation using graphene — toward the creation of graphene injection lasers . *T. Otsuji* ¹ *, A. Satou¹, S.A. Boubanga Tombet¹, M. Ryzhii², V. Ryzhii¹.* 1. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan. 2. Computational Nano-Electronics Laboratory, University of Aizu, Japan .
10.20	L2-03	INVITED: Perspective applications for 3C-SiC on silicon technology. F. Iacopi, L. Wang, G. Walker, L. Hold, B. Cunning, J. Han, P. Tanner, A. Iacopi, S. Dimitrijev. Queensland Micro and Nanotechnology Facility, Griffith University, Australia .

11.00 — 11.20 Coffee break

Conference Hall

Session 7. Advanced Lithography

Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia

11.20	O2-01	INVITED: Carbone nanotubes and nanostructures ? multifunctional materials for emission electronics. Yu.V. Gulyaev. Kotel’nikov Institute of Radio Engineering and Electronics, RAS, Russia.
11.50	O2-02	INVITED: *Research activity in field of Projection XEUV Lithography in IPM RAS. N.N. Salashchenko, N.I. Chkhalo.* Institute for Physics of Microstructures, RAS, Russia .
12.20	O2-03	Next Generation Lithography — fundamental problems . *S.I. Zaitsev* . IMT RAS, Chernogolovka, Russia .
12.40	O2-04	*NANOMAKER — the electron lithography tool for ultimate resolution. B.N. Gaifullin¹, I.S. Stepanov¹, A.A. Svintsov², S.I. Zaitsev².* 1. Interface Ltd, Moscow, Russia. 2. Institute of Microelectronics Technology, RAS , Chernogolovka, Russia .

Auditorium A

Session 8. Quantum Informatics IV

Session Chairman: Leonid Fedichkin, Institute of Physics and Technology, RAS , Moscow, Russia

11.20	q2-01	Quantum information and spectroscopy of cold Rydberg atoms. I.I. Ryabtsev, I.I. Beterov, D.B. Tretyakov, V.M. Entin, E.A. Yakshina. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia .
11.40	q2-02	Creating a single-atom array for quantum computation using Rydberg blockade in an atomic ensemble. *D.B. Tretyakov* *, I.I. Beterov, V.M. Entin, E.A. Yakshina, and I.I. Ryabtsev.* Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia .
12.00	q2-03	Integrated diamond nanostructures for quantum informatics. V . P . *Popov* ¹ , L . N . *Safronov* ¹ , V . A . *Antonov* ¹ , S . N . *Podlesnyi* ¹ , A . V . *Shishaev* ¹ , I . I . *Ryabtsev* ¹ , N . *Kupriyanov* ² , Yu . N . *Pal* ‘ *yanov* ² . 1. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia. 2. Sobolev Institute of Geology and Mineralogy, SB RAS, Novosibirsk, Russia .
12.20	q2-04	Color centers in nanodiamonds of different origin. I.I. Vlasov¹ , V.G. Ralchenko¹, O. Shenderova², A.A. Shiryaev³, A.A. Khomich¹, V.S. Sedov¹, M.S. Komlenok¹, V.S. Pavelyev^4,5, K.N. Tukmakov⁵, S. Turner⁶, F. Jelezko ⁷, J. Wrachtrup⁸, V.I. Konov¹. ¹General Physics Institute, RAS, Moscow, Russia. ² International Technology Centre, Raleigh, USA. ³ Institute of Physical Chemistry, RAS, Russia. ⁴Image Processing Systems Institute RAS, Samara, Russia. ⁵Samara State Aerospace University, Samara, Russia. ⁶ EMAT, University of Antwerp, Antwerpen, Belgium. ⁷Institute for Quantum Optics, Ulm University, Ulm, Germany. ⁸Physical Institute and Research Center SCOPE, Stuttart University, Stuttgart, Germany .
12.40	q2-05	Quantum register based on structured diamond waveguide with NV centers. A.V. Tsukanov, I.Yu. Kateev, A.A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Science, Moscow, Russia .

Auditorium B

Session 9. Workshop Silicon-on-Insulator I

Session Chairmen: Alexander Orlikovsky, Institute of Physics and Technology, RAS, Russia

11.20	W2-01	INVITED: Random telegraph noise diagnostics of nanowire SOI MOSFETs. A.N. Nazarov¹, I. Ferain², R. Yu², A. Kranti², P. Razavi². 1. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kiev, Ukraine. 2. Tyndall National Institute, Cork, Ireland .
11.45	W2-02	INVITED: *SOI structure with Si-nanoclusters embedded in the oxide layer prepared by low-dose co-implantation. V. Litovchenko, B. Romanyuk, V.* Ìå lniê , O. Oberemok, V. Popov, A. Sarikov.** V. Lashkarev Institute of Semiconductor Physics, NAS of Ukraine, Kiev, Ukraine .
12.10	W2-03	*Quantum noise in field-effect nanotransistors. V. Vyurkov, S. Filippov, I. Semenikhin, A. Orlikovsky.* Institute of Physics and Technology, RAS, Moscow, Russia .
12.30	W2-04	Revision of interface coupling in ultra-thin body SOI MOSFETs. T. Rudenko¹, A. Nazarov¹, V. Kilchytska², D. Flandre². 1. Institute of Semiconductor Physics, National Academy of Ukraine, Kyiv, Ukraine. 2. ICTEAM Institute, Universite catholique de Louvain .
12.50	W2-05	*Noise characteristics of nanoscaled SOI MOSFETs. N. Lukyanchikova¹, N. Garbar¹, V. Kudina¹, A. Smolanska¹, E. Simoen², C. Claeys^2,3* .** 1. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kiev, Ukraine. 2. IMEC, Leuven, Belgium. 3. KU Leuven, Belgium .

13.10-14.00 Lunch

Conference Hall

Session 10. Workshop Silicon-on-Insulator II

Session Chairmen: Alexey Nazarov , Institute of Semiconductor Physics, NASU, Kyiv, Ukraine

14.00	W2-06	INVITED: Threshold voltage of advanced MOSFETs: Physical criteria and experimental extraction methods. T. Rudenko¹, A. Nazarov¹, V. Kilchytska², D. Flandre². 1. Institute of Semiconductor Physics, National Academy of Ukraine, Kyiv, Ukraine. 2. ICTEAM Institute, Universite catholique de Louvain .
14.30	W2-07	Electrical characterization of high-k gate dielectrics for future CMOS technology. Y.Y. Gomeniuk ¹ , Y.V. Gomeniuk¹, A.N. Nazarov¹, I.P. Tyagulskii¹, V.S. Lysenko¹, K. Cherkaoui ², S. Monaghan², P.K. Hurley². 1. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kiev, Ukraine. 2. Tyndall National Institute, University College Cork, Lee Maltings, Ireland .
1 4. 50	W2-08	The mobility models for TCAD simulation of extremely thin nanoscale SOI MOSFETs . *Y. Chaplygin, A. Krasjukov, T. Krupkina, I. Titova* . National Research University of Electronic Technology, Moscow, Russia .
15.10	W2-09	SOI CMOS RadHard SRAM 256K, 1M, and 4M . *N. Alieva¹, A. Belous¹, V. Bondarenko², L. Dolgyi², E. Lozitskyi¹, S. Soroka ¹, G. Usov¹, A. Turzevich¹, S. Shvedov¹* . 1. «Integral» Join Stock Company, Minsk, Belarus. 2. Belarussian State University of Informatics and Radioelectronics, Minsk, Belarus .
15.30	W2-10	Carrier mobility in SOI layers with bonded interface. O.V. Naumova, B.I. Fomin, V.P. Popov . Institute of Semiconductor Physics, RAS, Novosibirsk, Russia .

Auditorium A

Session 11. Quantum Informatics V

Session Chairman: Eduard Fel’dman, Institute of Problems of Chemical Physics, RAS, Russia

14.00	q2-0 6	INVITED: Charge pumping with Coulomb blockade devices . *Yu.A. Pashkin* . Physics Department, Lancaster University, United Kingdom, NEC Smart Energy Research Laboratories and RIKEN Advanced Science Institute, Tsukuba, Japan .
14.30	q2-07	Quantum discord in Materials with electron and nuclear spins. M.A. Yurishchev. Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia .
14.50	q2-08	On the time-optimal implementation of quantum Fourier transformation for qudits represented by quadrupole nucleus. V.P. Shauro, V.E. Zobov. L. V. Kirensky Institute of Physics, Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, Russia .
15.10	q2-09	*A spin chain under the pulse conditions as a quantum data channel. M.M. Kutcherov.* Institute of Space and Information Technology, Siberian Federal University, Krasnoyarsk, Russia .
15.30	q2-1 0	*A unitary invariant measure of quantum correlations. A.I. Zenchuk.* Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia .
15.50	q2-11	Quantum correlations in a nanopore filled with a gas of spin-carrying molecules (atoms) in a strong magnetic field. E.B. Fel’dman, E.I. Kuznetsova, M.A. Yurishchev. Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia .

Auditorium B

Session 12. Magnetic Micro- and Nanostructures

Session Chairman: Mikhail Chuev, Institute of Physics and Technology, RAS, Russia

14.00	O2-05	INVITED: On the thermodynamics of antiferromagnetic nanoparticles and macroscopic quantum effects observed by M o ssbauer spectroscopy. M.A. Chuev. Institute of Physics and Technology, RAS, Moscow , Russia .
14.30	O2-06	Characterization of nanoparticles in a media using multilevel models of magnetic dynamics . *I. Mischenko* ¹ *, M. Chuev* ¹ *, V. Cherepanov* ² *, M. Polikarpov* ² *, V. Panchenko* ² . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. National Research Centre «Kurchatov Institute», Moscow, Russia .
14.50	O2-07	The effect of technological factors on micromagnetic states of magnetic nanostructures . *O.S. Trushin* ¹ *, V.V. Naumov¹, V.F. Bochkarev¹, N. Barabanova², V.A. Paporkov²* . 1. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia. 2. Yaroslavl State University, Yaroslavl, Russia .
15.10	O2-08	Magnetoresistance of multilayer ferromagnetic nanoparticles . *S.N. Vdovichev, B.A. Gribkov, S.A. Gusev, A.Yu. Klimov, V.L. Mironov, I.M. Nefedov, V.V. Rogov, A.A. Fraerman, I.A. Shereshevskii* . Institute for Physics of Microstructures, RAS, Nizhniy Novgorod, Russia .
15.30	O2-09	Magnetic logical cells based on domain wall pinning effects in ferromagnetic nanowire-nanoparticles systems . *V.L. Mironov* *, O.L. Ermolaeva, E.V.Skorohodov, A.Yu. Klimov* . Institute for Physics of Microstructures, RAS, Nizhniy Novgorod, Russia .
15.50	O2-10	*Field-induced transitions in ferrimagnetic chain of spins: stability of ferromagnetic and antiferromagnetic phases. M. Kostyuchenko.* Yaroslavl State Technical University, Yaroslavl, Russia .

16.10-16.30 Coffee break

16.30-18.30 Entresol. POSTER SESSION I

Bottom hall. EXHIBITION

19.00 Dinner

Thursday, October 4^th 2012

08.15 Breakfast

Conference Hall

Session 13 . Micro- and Nanodevices I

Session Chairman: Vladimir Vuyrkov, Institute of Physics and Technology, RAS, Russia

9 .00	O3-01	Current state and new prospects of semiconductor infrared photoelectronics . V. Ponomarenko^1,2, A. Filachev¹. 1.R&P Association «Orion», Moscow, Russia. 2. MIPT, Dolgoprudny, Russia .
9.20	O3-02	Silicon nanowire field effect transistor with highly doped leads . *S. Amitonov* ¹ *, D. Presnov^1,2, K. Rudenko³, V. Rudakov³, V. Krupenin¹* . 1. Laboratory of Cryoelectronics, Moscow State University, Moscow, Russia. 2. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 3. Institute of Physics and Technology, RAS, Moscow, Russia .
9.40	O3-03	Electronic band alignment and electron transport in Cr/BaTiO₃/Pt ferroelectric tunnel junctions . *A. Zenkevich* ¹ *, M. Minnekaev* ¹ *, Yu. Matveyev* ¹ *, Yu. Lebedinskii* ¹ *, K. Bulakh* ² *, A. Chouprik* ² *, A. Baturin* ² *, S. Thiess* ² *, W. Drube* ² . 1. National Research Nuclear University «Moscow Engineering Physics Institute», Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany .
1 0. 00	O3-04	A gold free fully copper metalized GaAs pHEMT for the high frequency applications. *E. Erofeev* ¹ *, V. Kagadei¹, A. Kazimirov².* 1. Research and Production Company «Micran», Tomsk, Russia. 2. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia .

Auditorium A

Session 14. Metrology and Characterization

Session Chairman: Konstantin Rudenko, Institute of Physics and Technology, RAS, Russia

09.00	O3-05	Measurement of thickness of a layer of natural silicon oxide being on a test relief pitch structure, created on a substrate of monocrystalline silicon. M.N. Filippov^a,b,c, V.P. Gavrilenko^a,c, A.A. Kuzin^a,c, A.Yu. Kuzin^c, A.A. Kuzmin^a,c, V.B. Mityukhlyaev^a, A.V. Rakov^a, P.A. Todua^a,c, A.V. Zablotskiy^a,c . ^a Center for Surface and Vacuum Research, Moscow, Russia; ^b N.S. Kurnakov Institute of General and Inorganic Chemistry, Moscow, Russia; ^cNational Research University «Moscow Institute of Physics and Technology», Dolgoprudny, Moscow Region, Russia . /p>
09.20	O3-06	Characterization of graphene layers grown using Ni/a-SiC bi-layer as a precursor. A.V. Vasin¹, S.A. Gordienko¹, P.M. Lytvyn¹, V.V. Strelchuk¹, A.S. Nikolaenko ¹, A.N. Nazarov¹, A.V. Rusavsky¹, V.S. Lysenko¹, V. Popov². 1. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kiev, Ukraine. 2. Institute of Rzhanov Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia .
9.40	O3-07	Characterization of semiconductor heterostrucrures using Dynamic Secondary Ion Mass Spectrometry . *B. Ber* *^1,2* *, A. Merkulov* ³ . 1. A.F. Ioffe Physical-Technical Institute, RAS, St Petersburg, Russia; 2. Center of Multi-User Equipment «Material Science and Characterization for Advanced Technologies», St Petersburg, Russia. 3. CAMECA SAS, Gennevilliers, Cedex, France .
10.00	O3-08	Determination of the state of non-volatile memory cell with the floating gate by using scanning probe microscopy . *D. Hanzii* ¹ *, E. Kelm* ² *, N. Luapunov* ² *, R. Milovanov* ² *, G. Molodcova* ² *, M. Yanul* ¹ *, D. Zubov* ² . 1. NT-MDT, Zelenograd, Russia. 2. Institute of Nanotechnology of Microelectronics, RAS, Moscow, Russia .
10.20	O3-09	Mechanisms of image formation in SEM. Yu.V. Larionov, Yu.A. Novikov . A.M. Prokhorov General Physics Institute, RAS, Moscow, Russia .
10.40	O3-10	Virtual scanning electron microscope . *Yu.V. Larionov* *, Yu.A. Novikov* . A.M. Prokhorov General Physics Institute, RAS, Moscow, Russia .

Auditorium B

Session 15. Micro- and Nanoelectronic Structures I

Session Chairman: Igor Neizvestnyi, A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia

09.00	O3-11	Formation mechanism and properties of Ge quasicrystalline nanoclusters in SiO_x matrix. Yu.N. Kozyrev¹, M.Yu. Rubezhanska¹, V.S. Lysenko², S.V. Kondratenko³, V.P. Kladko², Yu.V. Gomeniuk², Ye.Ye. Melnichuk³. 1. O.O. Chuiko Institute of Surface Chemistry, Kyiv, Ukraine. 2. Institute of Semiconductor Physics, Kyiv, Ukraine. 3. Taras Shevchenko national University of Kyiv, Ukraine.
09.20	O3-12	Photoluminescence of Si layers on grown SiO₂ and optical resonant structures . *A.A. Shklyaev* *^{1, 2}* *, D.V. Gulyaev¹,* *D.E. Utkin¹, A.V. Tsarev¹,* *A.V. Dvurechenskii¹, A.V.Latyshev^1,* ² . 1. A .V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia. 2. Novosibirsk State University, Novosibirsk, Russia .
9.40	O3-13	Influence of metamorphic buffer design on electrophysical and structural properties of MHEMT nanoheterostructures In_0.7Al _0.3As/In_0.7Ga_0.3As/In_0.7Al_0.3As/GaAs. S.S. Pushkarev^1,2, G.B. Galiev¹, E.A. Klimov¹, D.V. Lavrukhin¹, I.S. Vasil’evskii ², R.M. Imamov³, I.A. Subbotin³, O.M. Zhigalina³, V.G. Zhigalina³, P.A. Buffat⁴, B. Dwir⁴, Å *.I. Suvorova* *^3,4* . 1. Institute of Ultrahigh Frequency Semiconductor Electronics, RAS, Moscow, Russia. 2. National Nuclear Research University «MEPHI», Moscow, Russia. 3. A.V. Shubnikov Institute of Crystallography of RAS, Moscow, Russia. 4. Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland .
10.00	O3-14	GaN layers with low dislocation density and high electron mobility grown by high-temperature ammonia-MBE . *S.I. Petrov¹, A.N. Alexeev¹, D.M. Krasovitsky², V.P. Chaly², V.V. Mamaev¹* . 1. SemiTEq JSC, Saint-Petersburg, Russia. 2. Svetlana-Rost JSC, Saint-Petersburg, Russia .
10.20	O3-15	Formation, optical, electrical, and thermoelectrical properties of silicon nanocomposites with embedded Mg₂Si nanocrystallites . *K.N. Galkin¹, S.V. Vavanova¹, N.G. Galkin¹, R. Kudrawiec², E. Zielony², A. Misiewicz²* . 1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladovostok, Russia. 2. Institute of Physics, Wroclaw University of Technology, Wroclaw, Poland .
10.40	O3-16	Laser pulse crystallization and optical properties of Si/SiO₂ and Si/Si₃N₄ multilayer nano-heterostructures . V . A . *Volodin* ¹ , S *.A.* *Arzhannikova¹* *, A.A. Gismatulin* ¹ , *G.N. Kamaev¹, A.H. Antonenko¹, S.G. Cherkova¹, S.A. Kochubei¹, A.A. Popov², H. Rinnert³, and M. Vergnat³* . 1. Institute of Semiconductor Physics, RAS; Novosibirsk State University, Novosibirsk, Russia. 2. Yaroslavl Department of FTI RAS, Yaroslavl, Russia. 3. Institut Jean Lamour UMR CNRS — Nancy Universite — UPV Metz, Faculte des Sciences et Technologies, Vand?uvre-les-Nancy Cedex, France .

11.00-11.20 Coffee break

Conference Hall

Session 16. Plasma and Ion Beam Technologies I

Session Chairman: Konstantin Rudenko, Institute of Physics and Technology, RAS, Russia

11.20	O3-17	INVITED: Fundamentals and applications of Plasma ALD in nanoelectronics . *Ch. Hodson. Oxford Instruments Plasma Technology, UK*.
11.50	O3-18	INVITED: Applications of Plasma Immersion Ion Implantation for advanced micro/nano electronics: Challenges and case samples using IBS PULSION ^R Tool . *F. Torregrosa* ¹ *, J. Duchaine¹, S. Spiegel¹, G. Borvon¹, F. Milesi², K. Hassouni³, K. Maury ³* . 1. IBS, ZI Peynier Rousset, Peynier, France. 2. CEA-Leti MINATEC Campus, Grenoble Cedex 9, France. 3. Laboratoire des Sciences des Procedes et des Materiaux, LSPM, CNRS-UPR3407 Universite Paris 13, Villetaneuse, France .
12. 20	O3-19	Comparative investigation of ultra-shallow boron implantation into bulk silicon and SOI structures by PIII technique . *A. Miakonkikh* ¹ *, K. Rudenko¹, V. Rudakov², A. Orlikovsky¹* . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Yaroslavl Branch of Institute of Physics and Technology, RAS, Yaroslavl, Russia .
12.40	O3-20	Etching characteristics of GaAs in CCl₂F₂/Ar inductively coupled plasma . *D.B. Murin, V.I. Svettsov, A.M. Efremov, A.E. Leventsov* . Ivanovo State University of Chemical Technology, Ivanovo, Russia .
13.00	O3-21	The effects of additive gases (Ar, N₂, H₂, Cl₂, O₂) on HCl plasma parameters and composition. A. Efremov, A. Yudina, A. Davlyatshina, V. Svettsov . Ivanovo State University of Chemistry and Technology, Ivanovo, Russia .

Auditorium A

Session 17. Quantum Informatics VI

Session Chairman: Farid Ablayev, Institute for Informatics of Tatarstan Academy of Sciences, Kazan, Russia

11.20	q3-01	INVITED: Entanglement in a system of harmonic oscillators . *Yu. Ozhigov* . Moscow State University; Institute of Physics and Technology RAS, Moscow, Russia .
11.50	q3-02	The strong influence of weak observers on the electron dynamics in large coupled quantum dots clusters . *L. Fedichkin* *^1,2,3* . 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. NIX, Moscow, Russia .
12.10	q3-03	Analysis of quantum processes: methods and results . *A.Yu. Chernyavskiy* *^1,2* . 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. 2. Moscow State University, Moscow, Russia .
12.30	q3-04	Entanglement-annihilating quantum dynamical processes . *S.N. Filippov* *^1,2* . 1. Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Russia .
12.50	q3-05	Euclidean qubits versus conventional quantum circuits . *A.Yu. Vlasov* *^1,2* . 1. Federal Radiology Center, IRH, St.-Petersburg, Russia. 2. A. Friedmann Laboratory for Theoretical Physics, St.-Petersburg, Russia .

Auditorium B

Session 18. Micro- and Nanoelectronic Structures II

Session Chairman: Oleg Trushin , Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia

11.20	O3-22	The conductive layers on the base of multiwalled carbon nanotubes . L.P. Ichkitidze ¹ , B.M. Putrya¹, S.V. Selishchev¹, E.V. Blagov², A.A. Pavlov², V.A. Galperin³ , E.P. Kitsyuk³, Yu.P. Shaman³. 1. National Research University of Electronic Technology «MIET» , MIET, Zelenograd, Moscow, Russia. 2. Institute of Nanotechnology of Microelectronics, RAS, Moscow, Russia. 3. Scientific-Manufacturing Complex «Technological Centre», MIET, Zelenograd, Moscow, Russia.
11.40	O3-23	Investigation of nucleation and field emission characteristics of carbon nanowalls grown on porous silicon . *S. Evlashin,Y. Mankelevich, A. Pilevskii, V. Borisov, P. Shevnin, A. Stepanov, N. Suetin, A. Rakhimov* . Skobeltsyn Institute of Nuclear Physics, Moscow, Russia .
12.00	O3-24	Properties of thin HfO₂ gate dielectric formed by plasma ALD process . *A. Miakonkikh* *, A. Rogozhin, K. Rudenko, A. Orlikovsky* . Institute of Physics and Technology, RAS, Moscow, Russia .
12.20	O3-25	Effect of nanodimensional polyethylenimine layer on surface potential barriers of hybrid structures based on silicon single crystal . *I.V. Malyar,* *D.A. Gorin, S.V. Stetsyura.* Saratov State University, Saratov, Russia .
12.40	O3-26	Possible influence of nanoobjects on properties of nanomaterials. S.P. Timoshenkov, I.M. Britkov, O.M. Britkov, S. Evstafiev, A.S. Timoshenkov, B.M. Simonov, E.P. Prokopev. Federal State Budgetary Institution of Higher Education «National Research University «MIET», Zelenograd, Russia .

13.20-14.00 Lunch

Conference Hall

Session 19. Micro- and Nanoelectromechanical Systems

Session Chairman: Sergey Timoshenkov, National Research University of Electronic Technology, Microelectronics Dept., Zelenograd, Moscow, Russia .

14.00	O3-27	INVITED: The physical and technological problems in design of pressure sensors with nano-scale piezoresistors. I. Neizvestnyi¹, G. Kamaev¹, V. Gridchin², A. Cherkaev². ¹ A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia; ²Novosibirsk State Technical University, Novosibirsk, Russia.
14.30	O3-28	Design and fabrication of piezoelectric MEMS. S. Timoshenkov, V. Vodopyanov, N. Korobova. National Research University of Electronic Technology, Department of Microelectronics, Zelenograd, Moscow, Russia .
14.50	O3-29	New electronic system converter linear acceleration with custom output characteristics . S. *Timoshenkov* *, A. Timoshenkov, A. Shalimov* . National Research University of Electronic Technology, Microelectronics Dept., Zelenograd, Moscow, Russia .
15.10	O3-30	Resonance properties of multilayer metallic nanocantilevers . *I. Uvarov, V. Naumov, I. Amirov**. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia*.
15.30	O3-31	*Modeling of two-axis micromechanical gyroscope-accelerometer. I.E. Lysenko.* Taganrog Institute of Technology — Southern Federal University, Taganrog, Russia .
1 5. 50	O3-32	Matrix propulsion microthruster for nanosatelites *. V. Bondarenko ¹ , K. Dobrego², L. Dolgyi¹, A. Klushko¹, E.Chubenko¹, S. Futko²* .** 1. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus. 2. A.V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus,Minsk, Belarus .

Auditorium A

Session 20. Quantum Informatics VII

Session Chairman: Yuri Ozhigov, Moscow State University, Moscow, Russia

14.00	q3-06	On the validity of neoclassical theory of the Compton effect for revision and reformulation of the standard quantum mechanics interpretation. V.V. Aristov. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Russia .
14.20	q3-07	Why quantum computing can be real only in multiple universes . *V.V. Aristov, A.V. Nikulov.* Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia .
14.40	q3-08	Simulations of adiabatic and nonadiabatic chemical reactions in condensed media. K. Arakelov. Moscow State University, Moscow, Russia .
15.00	q3-09	Quantum implication and strategies for multi-agent models . *A.A Ezhov, A.G. Khromov, S.S. Terentyeva* . Science Research Center of Russian Federation Troitsk Institute for Innovation and Fusion Research, city district Troitsk, Moscow, Russia .

Auditorium B

Session 21. Plasma and Ion Beam Technologies II

Session Chairman: Alexander Efremov , Ivanovo State University of Chemical Technology, Ivanovo, Russia

14.00	O3-33	INVITED: Formation of Nanoscale Structures by Inductively Coupled Plasma Etching . *C. Welch. Oxford Instruments Plasma Technology, UK*.
14.3 0	O3-34	Plasma etching of silicon for MEMS and optical applications: Comparison of RIE, Bosch and cryogenic processes . *I. Amirov¹,* *V. Lukichev¹, V. Yunkin². 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Institute of Microelectronics Technology, RAS, Chernogolovka, Russia* .
14.5 0	O3-35	Low-temperature synthesis of carbon nanotubes by plasma enhanced chemical vapor deposition. V.A. Galperin, A.A. Pavlov, Yu.P. Shaman, A.A. Shamanaev, S.N. Skorik . Scientific-Manufacturing Complex «Technological Centre», Moscow, Russia .
15.1 0	O3-36	Photovoltaic properties of porous-Si:He/Si structure produced by plasma immersion ion implantation . *A. Rogozhin* , *A. Miakonkikh, K. Rudenko* . Institute of Physics and Technology, RAS, Moscow, Russia .
15.3 0	O3-37	On a way to fabrication technology of u *ltra thin Si on sapphire. V. Chernysh ¹ , A. Shemukhin², Yu. Balakshin¹, N. Egorov³, V. Goncharov³, S. Golubkov³, A. Sidorov³, B. Malukov³, V. Statsenko⁴, V. Chumak⁴* .** 1. Faculty of Physics, Moscow State University, Moscow, Russia. 2. Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 3. Research Institute of Material Science and Technology, Zelenograd, Russia. 4. Epiel Joint Stock Company , Zelenograd, Russia .
1 5.50	O3-38	Nonlinear waves and structures induced by ion bombardment of solids . *S. Krivelevich¹, D. Korshunova², N. Pron²* . 1. Yaroslavl Branch of the Institute of Physics and Technology , RAS, Yaroslavl, Russia. 2. Yaroslavl State University, Yaroslavl, Russia .

16.10-16.30 Coffee break

16.30-18.30 Entresol. POSTER SESSION II

Bottom hall. EXHIBITION

18.30. Conference Hall. CLOSING CONFERENCE REMARKS

À . À . Orlikovsky, Program Committee Chair,

Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

19.30 CONFERENCE DINNER

Friday, October 5^th, 2012

09.00 Breakfast

10.00 DEPARTURE

Стендовые доклады — 2009

By: admin-icmne

On: 02.05.2023

In: Постеры

Posters | Oral Presentations

Wednesday, October 7th 2009

Entresol

16.30 – 18.30 Poster session I

Nanodevices and Nanostructures

P1-01	Determination of electronic properties of molecular objects on the basis of nanodevices transport characteristics. V.A. Malinin, V.V. Shorokhov, E.S. Soldatov. Faculty of Physics, Moscow State University, 119899 Moscow, Russia
P1-02	Highly doped SOI based single-electron transistor: noise characteristics and charge sensitivity. D.E. Presnov1, V.S. Vlasenko2, S.V. Amitonov2, V.A. Krupenin2. 1. Nuclear Physics Institute, Moscow State University, Moscow, Russia 2. Laboratory of Cryoelectronics, Moscow State University, Moscow, Russia
P1-03	Nanocarbon films with electronic conductivity. N.F. Savchenko, M.B. Guseva, V.V. Khvostov, Yu.A. Korobov, A.F. Alexandrov. Physics Department, M.V. Lomonosov Moscow State University, Russia
P1-04	Secondary-emission properties of the carbon films. V.V. Khvostov, M.B. Guseva, N.F. Savchenko, Yu.A. Korobov, N.D. Novikov. Physics Department, M.V. Lomonosov Moscow State University, Moscow, Russia.
P1-05	Investigation of auto-emission diodes with CNT emitters under small inter-electrode distance conditions. S. Orlov1, O. Gushchin1, S. Yanovich1, V. Shyshko1, O. Perveeva1, N. Savinsky2. 1. Mikron JSC, Zelenograd, Russia, 2. Institute of Physics and Technology, Yaroslavl Branch, RAS, Yaroslavl, Russia
P1-06	Design of 3D nano-carbon emitter based autoemission devices. N. Savinski1, M. Gitlin1, A. Shornikov1. 1. Yaroslavl branch of Institute of Physics & Technology,Russian Academy of Sciences, Yaroslavl, Russia
P1-07	ZnO nanorods for device application. O.V. Kononenko 1, A.N. Red’kin 1, A.N. Baranov2, A.N. Panin1, 4, M.V. Shestakov3, V.T. Volkov1, A.I. Il’in1, E.E. Vdovin1 1. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia. 2. Moscow State University, Chemistry Department, Moscow, Russia 3. Moscow State University, Department of Materials Science, Moscow, Russia 4. Quantum-functional Semiconductor Research Center, Department of Physics, Dongguk University, Seoul, Korea.
P1-08	Observation of spin injection in ballistic nanostructures Mo(001)/Py. G.M. Mikhailov, V.Yu. Vinnichenko, A.V. Chernykh, I.V. Malikov, S.V. Piatkin. Institute of microelectronic technology and high purity materials RAS, Chernogolovka, Russia.

Nanostructure Technologies

P1-09	Formation of Voids in Silicon-Based Structures Annealed in Non-Isothermal Reactor. Yu. I. Denisenko. Institute of Physics and Technology, Yaroslavl Branch, RAS, Yaroslavl, Russia
P1-10	Si wires deposition by magnetron sputtering method. *S. Evlashin, N. Suetin, V. Krivchenko.* D.V. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
P1-11	Nanocrystalline silicon on sapphire. D. Pavlov, P. Shilyaev, E. Korotkov, N. Krivulin. University of Nizhniy Novgorod, Nizhniy Novgorod, Russia.
P1-12	Formation of the atomically smooth surface of gold film and the binding of gold nanoparticles on it by the self-assembly method. A.N. Kuturov1, E.S. Soldatov2, L.A. Polyakova3, S.P. Gubin3. 1. P.N. Lebedev Physical Institute of the Russian Academy of Science, Moscow, Russia 2. M.V. Lomonosov Moscow State University, Moscow, Russia, 3. Institute of General Inorganic Chemistry of the Russian Academy of Science, Moscow, Russia
P1-13	LGD-technology of FM/SC hybrid nanostructrures. A.S. Sigov1, A.V. Abramov2, L.A.Bityutskaya3, E.V. Bogatikov3, M.V.Grechkina3, Yu.I. Dikarev3, A.P.Lazarev2, E.A.Pankratova2, V.M.Rubinshtein3, A.V.Tuchin3. 1. MIREA, Moscow, Russia, 2. «Rosbiokvant» Ltd, Voronezh, Russia 3. Voronezh State University, Voronezh, Russia
P1-14	Preparation of electrodes for molecular transistor by focused ion beam. I.V. Sapkov1, V.V. Kolesov2, E.S. Soldatov1 . 1. Department of Physics, Moscow State University, Russia, 2. Kotel’nikov Institute of Radioengineering & Electronics of Russian Academy of Sciences, Moscow, Russia
P1-15	Formation of molecular transistor electrodes by electromigration. A.S. Stepanov1, E.S. Soldatov2, O.V. Snigirev1,2. 1. IMP, RRC “Kurchatov Institute”, Russia, 2. M.V. Lomonosov Moscow State University, Russia
P1-16	PECVD carbon nanostructure formation using DC glow discharge. D.G. Gromov, S.A. Gavrilov, I.S. Chulkov. Moscow Institute of Electronic Technology (Technical University), Zelenograd, Russia

Devices and ICs

P1-17	Physical limitations of reliability in microwave microelectronic devices operating in periodical pulse mode. A.G. Vasiliev, V.F. Sinkevich. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia
P1-18	Principal problems of quality improvement for high-speed planar transmission lines issued from studies of high-Q microstrip resonators. A.P. Chernyaev2, V.A. Dravin1, A.Yu. Golovanov1,2, A.L. Karuzskii1, A.E. Krapivka1, A.N. Lykov1, V. N. Murzin1, A. V. Perestoronin1, A. M. Tskhovrebov1, N. A. Volchkov1. 1. P.N. Lebedev Physical Institute of Russian Academy of Sciences, Moscow, Russia 2. Moscow Institute of Physics and Technology (State University), Dolgoprudny, Russia.
P1-19	Effect of Conductivity Triggering: Studying and Optimization of MOS-like Structures. A.E. Berdnikov, A.A. Popov, A.A. Mironenko, V.D. Chernomordick, A.V. Perminov. Yaroslavl Branch of Institute of Physics & Technology of Russian Academy of Sciences, Russia
P1-20	Design and application features of nonvolatile memory based on ferroelectric thin films. A. Marycheva1, N. Zaitsev2. 1. Moscow Institute of Electronic Engineering (TU), Zelenograd, Russia, 2. Micron Corp., Zelenograd, Russia
P1-21	Research of SONOS non -volatile memory elements. O. Orlov 1, N. Shelepin 1. Mikron JSC, Moscow, Russia
P1-22	Research and optimization of anodic joint process of SOI microelectromechanical strain transducer with glass reference element. L. Sokolov1, N. Parfenov1, S. Timoshenkov2, V. Kalugin2. 1. Moscow Aviation Institute, Moscow, Russia 2. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia.
P1-23	Experimental research of the Magnetotransistor in a double well. A. Kozlov1, Yu. Parmenov1, R. Tikhonov2. 1. Moscow State Institute of Electronic Engineering – Technical University, 2. SMC “Technical University”
P1-24	The amplifier-concentrator of electrons as the base element of the emission electronics. E. Il`ichev, A. Kuleshov, E. Poltoratskii, G. Rychkov. State Research Institute of Physical Problems,Zelenograd, Moscow, Russia
P1-25	Piezoelectric current generator through filamentary nanocrystals of zinc oxide. M. Nazarkin, S. Gavrilov. Moscow Institute of Electronic Technologies (Technical University, Zelenograd, Russia
P1-26	New type of high efficiency power supply of digital units. Y. Chaplygin, V. Losev. Moscow State Institute of Electronic Engineering, Moscow, Russia

Superconducting Structures and Devices

P1-27	The theoretical analysis of electronic thermal properties of the interfaces between multiband superconductors and a normal metal. I.A. Devyatov1, M.Yu. Romashka1, A.V. Semenov2, P.A. Krutitskii3, M.Yu. Kupriyanov1. 1. Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow, Russia, 2. State Pedagogical University, Moscow, Russia, 3. Keldysh Institute for Applied Mathematics, Moscow, Russia
P1-28	Microscopic theory of thermal phase slips in diffuse superconducting wires. A.V. Semenov1, I.A. Devyatov2, P.A. Krutitskii3, M.Yu. Kupriyanov2. 1. Moscow State Pedagogical University, Moscow, Russia, 2. Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russia, 3. Keldysh Institute for Applied Mathematics, Moscow, Russia
P1-29	Characteristics of Nb/?-Si/Nb Josephson junction arrays at frequencies of 68 — 75 GHz. A.L. Gudkov1, A.A. Gogin1, A.I. Kozlov1, A.N. Samys1, I.Ya. Krasnopolin2. 1. CJSC «Compelst», FSUE «SRIPP n. F.V. Lykin», Moscow, Zelenograd, Russia 2. FSUE «VNIIMS», Moscow, Russia
P1-30	Transport properties of josephson junctions with ferromagnetic layers. T.Yu. Karminskaya1, A.A. Golubov2, M.Yu. Kupriyanov1, A.S. Sidorenko3. 1. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 2. Faculty of Science and Technology and MESA+ Institute of Nanotechnology, University of Twente, The Netherlands. 3. Institute of Electronic Engineering and Industrial Technologies Chisinau, Moldova.
P1-31	Bi-SQUID with linear transfer function. V. Kornev1 , I. Soloviev1 , N. Klenov1, O. Mukhanov2. 1. Moscow State University, Moscow, Russia, 2. HYPRES, Elmsford, USA

Photonics and Optoelectronics

P1-32	Modeling of optical integrated circuit of a multiplexer/splitter on a basis of a photonic crystal structure. M. Belkin, K. Kostenko. Moscow State Technical University of Radio-Engineering, Electronics and Automation
P1-33	Computer-aided design of the high-efficient laser module for microwave-band fiber optic systems. M. Belkin, A. Loparev. Moscow State Technical University of Radio-Engineering, Electronics and Automation. Moscow, Russia
P1-34	Numerical methods for calculation of optical properties of layered structures. S.A. Dyakov1,4, V.A. Tolmachev1,2, E.V. Astrova2, S.G. Tikhodeev3, V.Y.Timoshenko4, T.S. Perova1 . 1. Trinity College Dublin, Dublin 2, Ireland. 2. Ioffe Physical Technical Institute, RAS, St. Petersburg, Russia 3. General Physics Institute, RAS, Moscow, Russia. 4. Faculty of Physics, Moscow University, Moscow, Russia.
P1-35	Vertical double range photocell with polysilicon photodiode, volume resonator and a photoelement with isotype potential p+ barrier in the substrate for UV application. I.V. Vanyushin1, V.A. Gergel2, N.M. Gorshkova2, A.G. Klimkovich1. 1. LCC “SensorIС”, Moscow, Russia. 2. Kotel`nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
P1-36	Formation of One-Dimensional Photonic Crystals by Means of Photo-Electrochemical Etching of Silicon. Yu.A. Zharova1, G.V. Fedulova1, E.V. Astrova1, V.A. Ermakov2 and T.S. Perova2. 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St.Petersburg, Russia, 2. Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Ireland
P1-37	Titanium dioxide with carbon nanotubes nanocomposite for new generation solar cells. A. Dronov , S. Gavrilov. Moscow Institute of Electronic Technologies (Technical University), Russia
P1-38	Application of linear-chain carbon nano-films in optoelectronic devices. M.B. Guseva1, P.B. Konstantinov2, Y.A. Kontsevoy2, N.N. Novikov1, A.S. Skrileov2, V.V. Khvostov1, V.V. Chernokozhin2 . 1. Physical faculty of Lomonosov Moscow State University Moscow, Russia, 2. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia
P1-39	Critical temperature of SF and SFS multilayres with arbitrary electron mean free path in F and S films. M.Yu. Kupriyanov1, A.I. Buzdin1, A.A. Golubov2 . 1. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 2. Centre de Physique Moleculaire Optique et Hertzienne, Universite Bordeaux, CNRS, France. 3. Faculty of Science and Technology and MESA+ Institute of Nanotechnology, University of Twente, The Netherlands.
P1-40	Experimental study of differential SQIF-structures. V. Kornev1 , I. Soloviev1 , N. Klenov1, O. Mukhanov2. 1. Moscow State University, Russia, 2. HYPRES, Elmsford, USA
P1-41	Quantum interferometers on multichain of josephson junctions. A. Karuzskiy1, G. Kuleshova2, A. Tshovrebov1, L. Zherikhina1. 1. Lebedev Physical Institute, Russian Academy of Science, Moscow, Russia; 2. Moscow Engineering Physics Institute (State University) , Moscow, Russia

Magnetic Micro- and Nanostructures

P1-42	Propagation of magnetostatic surface waves in ferromagnetic films with variable thickness. Yu.A. Ignatov, V.I. Scheglov, A.A. Klimov, S.A. Nikitov. Kotel’nikov Institute of Radio Engineering and Electronics (IRE RAS), Moscow
P1-43	Modification of magnetic domain structures in Co film using the atomic force microscopy nano-oxidation. A. Bukharaev1,2, D. Biziaev1, P. Borodin1, I. Merkutov2 . 1. Zavoisky Physical Technical Institute of Russian Academy of Sciences, Kazan, Russia, 2. Kazan State University, Kazan, Russia
P1-44	Investigations of magnetic states in multilayer submicron ferromagnetic particles. A.A. Fraerman, B.A. Gribkov, S.A. Gusev, A.Yu. Klimov, V.L. Mironov, V.V. Rogov, S.N.Vdovichev. Institute for physics of microstructures RAS, Nizhny Novgorod, Russia.
P1-45	Fe/MgO/Fe heterostructures on r-sapphire for single-crystal magnetic tunnel junctions. A. Chernykh, V. Vinnichenko, L. Fomin, G. Mikhailov. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia
P1-46	Epitaxial Fe3O4 films for spin valve applications. I.V. Malikov, G.M. Mikhailov. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia.
P1-47	Investigation of domain wall pinning and nanostructures remagnetization of epitaxial Fe structures with use of magnetic force contrast and magnetoresistance measurements. G.M. Mikhailov, V.Yu. Vinnichenko, L.A. Fomin, K.M. Kalach, I.V. Maliko. Institute of microelectronic technology RAS, Chernogolovka, Russia
P1-48	Dependence of two-layer structures Cu/Co magnetoresistance on thickness of copper. V. Naumov. Yaroslavl branch of Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl, Russia.
P1-49	Study of size effect on switching characteristics of spinvalve GMR sensor. O.S. Trushin1 , E.Yu. Buchin1 , V.F. Bochkarev1, N. Barabanova2. 1. Yaroslavl Branch of the Institute of Physics and Technology of Russian Academy of Sciences, Yaroslavl, Russia, 2. Department of Physics, Yaroslavl State University, Yaroslavl, Russia
P1-50	GMR sensor design optimization using micromagnetic simulations. O.S. Trushin1, N. Barabanova2, V.P. Alexeev2 . 1. Yaroslavl Branch of the Institute of Physics and Technology of Russian Academy of Sciences, Yaroslavl, Russia, 2. Department of Physics, Yaroslavl State University, Yaroslavl, Russia
P1-51	Optical and thermal effects in polymers with superparamagnetic impurities. R.M. Aynbinder. Institute of Chemical Technology, Prague, Czekh Republic.
P1-52	Ferromagnetic resonance study of thin Si65Mn35 layer. *S. Kapelnitsky1,2. 1. Russian Research Centre «Kurchatov Institute», Moscow, Russia. 2. Institute of Physics and Technology, Russian Academy of Sciences, Moscow , Russia*

Delayed Posters at Session I

D1-01

Magnetic and thermal properties of nanocomposite GdNiO3 . А.I. Rykova1, V.M. Dmitriev1, E.N. Khatsko1, A.V. Terekhov1 А.S. Cherny1, D.S. Kondrashev1, T. Mydlarz2, A. Zaleski2 , A.D. Shevshenko3, V.M. Uvarov3 . 1. B.I.Verkin Institute for Low Temperature Phys. & Engineering of NASU, Kharkov, Ukraine. 2. International laboratory of high magnetic fields and low temperatures, Wroclaw, Poland, G. V. Kurdyumov Institute for Metal Physics of the NAS of Ukraine, Kyyiv, Ukraine

D1-02

Magnetic properties of system La1-xSmxMnO3 . А.I. Rykova1, E.N. Khatsko1, А.S. Cherny1, T. Mydlarz2, J. Warchulska2 . 1. B.I.Verkin Institute for Low Temperature Phys. & Engineering of NASU, Kharkov, Ukraine 2. International laboratory of high magnetic fields and low temperatures, Wroclaw, Poland

Thursday, October 8th 2009

Entresol

16.45 – 18.30 Poster session II

Simulation and Modeling

P2-01	Calculation of the characteristics of electron transport through molecular clusters. Y.S. Gerasimov1 , V.V. Shorokhov2 , E.S. Soldatov2 , O.V. Snigirev1,2. 1. IMP, RRC “ Kurchatov Institute”, Moscow, Russia, 2. Faculty of Physics, Moscow State University, Moscow, Russia
P2-02	Investigation of segregation effect in InGaAs/GaAs quantum wells by means a computer simulation. A.N. Baryshev, S.V. Khazanova. Nizhni Novgorod University im.N.I.Lobachevskogo, NIzhni Novgorod, Russia
P2-03	Simulation of impurity diffusion at the formation of ultrashallow active areas in silicon-based FET. F. Komarov1, O. Velichko2, A. Mironov1, G. Zayats3, A. Komarov1, V. Tsurko3. 1. Institute of Applied Physics Problems, Minsk, Belarus, 2. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus 3. Institute of Mathematics, Academy of Sciences of Belarus, Minsk, Belarus.
P2-04	Modeling of the interfacial separation work in relation to impurity concentrations in adjoining materials. I. Alekseev, T. Makhviladze, A. Minushev, M. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia.
P2-05	Energetics and atomic mechanisms of strain relaxation in heteroepitaxial systems. O. Trushin1 , J. Jalkanen2 , E. Granato3 , S-C. Ying4, T. Ala-Nissila2. 1. Institute of Physics and Technology of Russian Academy of Sciences, Yaroslavl Branch, Yaroslavl, Russia, 2. Department of Engineering Physics, Helsinki University of Technology, Espoo, Finland, 3. Laboratґorio Associado de Sensores e Materiais, Instituto National de Pesquisas Espaciais, Sao Jose dos Campos, SP, Brazil, 4. Department of Physics, Brown University, Providence, RI 02912, USA
P2-06	Off-lattice self-learning kinetic Monte-Carlo: application to 2D cluster diffusion on metal surfaces. O. Trushin1 , A. Makin2 , T.S. Rahman3. 1. Institute of Physics and Technology of Russian Academy of Sciences, Yaroslavl Branch, Yaroslavl, Russia, 2. Department of Physics, Yaroslavl State University, Yaroslavl, Russia 3. Department of Physics, University of Central Florida, Orlando, FL, USA
P2-07	Nanoobject sizes of defects in porous systems and defective materials according ADAP method. Part I. S.P. Timoshenkov1, E.P. Svetlov-Prokop’ev1,2, V.I. Grafutin 1 1. Moscow Institute of Electronic Technology (Technical University), TU- MIET, Zelenograd, Russia,2. «State Science Centre of the Russian Federation- A.I.Alikhanov Institute for theoretical and experimental physics», Moscow, Russia
P2-08	Nanoobject sizes of defects in porous systems and defective materials according ADAP method. Part II. S.P. Timoshenkov1, E.P. Svetlov-Prokop’ev1,2, V.I. Grafutin 1 1. Moscow Institute of Electronic Technology (Technical University), TU- MIET, Zelenograd, Russia,2. «State Science Centre of the Russian Federation- A.I.Alikhanov Institute for theoretical and experimental physics», Moscow, Russia
P2-09	Calculation of electrophysical parameters of thin undoped GaAs-in-Al2O3 quantum nanowires and single-wall armchair carbon nanotubes. D.V. Pozdnyakov1, A.V. Borzdov1, V.M. Borzdov1, V.A. Labunov2 . 1. Belarusian State University, Minsk, Belarus, 2. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
P2-10	Penetration of quantum-mechanical current density under semi-infinite rectangular potential barrier as the consequence of the interference of the electron waves in semiconductor 2D nanostructures. V.A. Petrov, A.V. Nikitin. Institute of Radio Engineering and Electronics, Russian Academy of Sciences,Moscow, Russia
P2-11	Laser generation in broken-gap heterostructures. I. Semenikhin1, K.A. Chao2, A. Zakharova1. 1. Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia, 2. Department of Physics, Lund University, Lund, Sweden, and Department of Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden
P2-12	Monte Carlo simulation of submicron three-gate MOSFETs. O. Zhevnyak, V. Borzdov , A. Borzdov, D. Speranski. Belarussian State University, Minsk, Belarus
P2-13	SPICE Modeling and TCAD Simulation of Si Vertical Double-Diffused MOSFET. A.V. Sedov1, V.O. Turin1, A.M. Tsyrlov2, G.I. Zebrev3. 1. Orel State Technical University, Orel, Russia, 2. JSC “Proton”, Orel, Russia, 3. National Research Nuclear University “MEPHI”, Moscow, Russia
P2-14	Modeling of HBT with Si1-X-YGeXCY base. K. Petrosjanc, R. Torgovnikov. Moscow State Institute of Electronics and Mathematics, Moscow, Russia
P2-15	Reversible Gate Oxide Defect Recharging in Nanoscale Field Effect Transistors: Charge Annealing, Tunnel Gate Leakage, Random Telegraph Signal and 1/f Noise. G.I. Zebrev, N. Samokhin, D. Batmanova. Micro- and Nanoelectronics Department, National Research Nuclear University “MEPHI”, Moscow, Russia
P2-16	Radiation-Hardening-by-Design with Circuit-Level Modeling of Total Ionizing Dose Effects in Modern CMOS Technologies. M. Gorbunov1 , G. Zebrev2 , P. Osipenko1. 1. Scientific-Research Institute of System Studies, Russian Academy of Sciences, Moscow, Russia 2. Moscow Engineering Physics Institute, Moscow, Russia
P2-17	Specification of model for the multi-cathode quantum vacuum nano-triode on the base of new experimental data. V.A. Zhukov. St. Petersburg Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia
P2-18	The specifics of modeling high-speed integrated amplifiers with high amount of feedback. E.M. Savchenko, A.S. Budyakov. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia

Thin Films Technologies

P2-19	Formation of Ge/Cu ohmic contacts to n-GaAs with atomic hydrogen pre-annealing step. E. Erofeev1, V. Kagadei2. 1. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia 2. Research and production company “Micran”, Tomsk, Russia.
P2-20	Hf-based barrier layers for Cu-metallization. Denisenko Yu.I.1, Gusev V.N.1, Khorin A.I.1,2, Orlikovsky A.A.1, Rogozhin A.E.1, Rudakov V.I.1, Vasiliev A.G.1,3 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia 2. Moscow State Institute of Radio-engineering, Electronics and Automation, Moscow, Russia, 3. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
P2-21	*Properties of HfO2 films on Si-substrate obtained by electron beam vapor deposition. A.V. Ershov, S.N. Zubkov, V.V. Karzanov, S.V. Khazanova,* О.N. Nikolaeva, D.A. Nikolichev.** Nizhni Novgorod University im.N.I.Lobachevskogo, NIzhni Novgorod, Russia.
P2-22	Some peculiarities in the formation functional films by sol-gel and electrophoretic technologies. N. Korobova1, S. Timoshenkov2 , A. Shabanova3. 1. Kazakh National University, Almaty, Kazakhstan.; 2. Moscow Institute of Electronic Technology, Moscow, Russia, 3. National Engineering Academy, Almaty, Kazakhstan.
P2-23	The peculiarities of creating composite glasses for multilayer structures, MEMS structures included. S. Timoshenkov 1, O. Orlov 2 . 1. Moscow Institute of Electronic Technology, Moscow, Russia, 2. Mikron JSC, Moscow, Russia

Lithography Techniques

P2-24	Electron Beam Lithography using PMMA as negative resist. E.N. Zhikharev, S.N. Averkin, V.A. Kalnov. Institute of Physics and Technology of Russian Academy of Science, Moscow, Russia
P2-25	Application of virtual scanning electron microscope to determine the parameters of atom nanolithograph microlenses. *A. Zablozkiy1, E. Shehin1, A. Kuzin1, A. Baturin1, P. Melentiev2, D. Lapshin2, V. Balykin2 .* 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 2. Institute of Spectroscopy Russian Academy of Sciences, Troitsk , Russia

Ion and Neutral Beam Processing

P2-26	Features of relief formation at silicon surfaces by etching with focused ion beam. N. Gerasimenko1, A. Chamov1,2, E. Novoselova2, V. Khanin2. 1. Moscow Institute for Electronic Engeneering, Moscow, Russia, 2. JSC Mikron, Moscow, Russia.
P2-27	Modification of electrophysical behavior of surface adjacent to FIB milling area. A.A. Chouprik, A.A. Kuzin, A.V. Zablotskiy. Moscow Institute of Physics and Technology, Dolgoprudny, Russia.
P2-28	Formation of buried borosilicate layers by means of ion implantation. A. Churilov, S. Krivelevich, R. Seljukov. Yaroslavl branch of Institute of Physics & Technology, Russian Academy of Sciences, Yaroslavl, Russia
P2-29	Fast atom beam formation of inert and chemically active substances in an extensive source of ions for application in the technological processes. Y. Maishev, S. Shevchuk, T. Matveev. Institute of Physics and Technology RAS, Moscow, Russia.

Plasma Processing

P2-30	Microwave plasma assisted single crystal diamond films growth and its application in microelectronics. A.L. Vikharev1, A.M. Gorbachev1, A.B. Muchnikov1, D.B. Radishev1, A.A. Altukhov2, A.V. Mitenkin2, M.P. Dukhnovsky3, V.E. Zemlyakov3. 1. Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, Russia, 2. ITC «UralAlmazInvest», Moscow, Russia, 3. FSUE «Istok», Fryazino, Russia
P2-31	Plasma damage and restoration of CVD low-k materials. E. Smirnov1,2 , A. Ferchichi2 , L. Zhao2, M.R. Baklanov2. 1. Moscow Institute of Electronic Technology (Technical University), Zelenograd, Russia 2. IMEC, Leuven, Belgium.
P2-32	Optimization of parameters of deep plasma chemical process of silicon etchings for elements MEMS. A.I. Vinogradov, N.M. Zaryankin, Yu.A. Mikhajlov, E.P. Prokopiev, S.P. Timoshenkov. Moscow Institute of Electronic Technology (Technical University), TU- MIET, Zelenograd, Moscow, Russia
P2-33	Formation of periodical nanostructures on semiconductors using solid alumina template. A. Belov, S. Gavrilov, V. Shevyakov. Moscow Institute of Electronic Techologies (Techincal University), Zelenograd, Russia
P2-34	The effect of plasma treatment on the residual stresses of metallic cantilever structures. I.I. Amirov, V.V. Naumov. Yaroslavl branch of the Institute of Physics & Technology, Russian Academy of Sciences,, Yaroslavl, Russia
P2-35	Kinetics of the GaAs etch process in the Cl2 dc glow discharge plasma. A. Dunaev, S. Pivovarenok, A. Efremov, V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia
P2-36	Plasma parameters and composition in HCl/X (X=Cl2, H2, Ar) dc glow discharges. A. Efremov, V. Svettsov, S. Lemehov. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia
P2-37	Emission Tomography Algorithm Optimization: Applications for Microelectronic Plasma Equipment. A.V. Fadeev, K.V. Rudenko, V.F. Lukichev, A.A. Orlikovsky. Lab. of Microstructuring and Submicron Devices, Institute of Physics & Technology, Russian Academy of Sciences, Moscow, Russia

Micro- and Nanostructure Characterization

P2-38	Characterization of GaSb(001) surface under pre-growth processing. M.S. Dunaevskii, E.V. Kunitsina, T.V. L’vova, A.N. Semenov, B.Y. Meltser, J.V. Terentyev. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Saint-Petersburg,, Russia.
P2-39	Measurements samples temperature and dynamics of recrystallization of implanted silicon at rapid thermal processing. Ya. Fattakhov, M. Galyautdinov, B. Farrakhov, M. Zakharov. Kazan Physical Technical Institute of the Russian Academy of Sciences, Kazan, Russia.
P2-40	Features of electron direct tunneling through an ultrathin oxide under the non-stationary depletion of a n-Si surface. G.V. Chucheva, E.I. Goldman, Yu.V. Gulyaev, A.G. Zhdan. The Institute of Radio Engineering and Electronics Russian Academy of Sciences, Fryazino, Russia
P2-41	Investigations of nanostructured porous PbTe films with X-ray diffractometry and reflectometry. S.P. Zimin1, V.M. Vasin1, E.S. Gorlachev2, A.P. Petrakov3, S.V. Shilov3. 1. Yaroslavl State University, Russia, 2. Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Russia, 3. Syktyvkar State University, Russia
P2-42	Relationship between modification of electrophysical properties and structural characteristics in semiconductor nanosized heterostructuresInxAl1-xAs/InyGa1-yAs/InxAl1-xAs/InP. R.M. Imamov1, I.A. Subbotin1, G.B. Galiev2, I.S. Vasil’evsky2, E.A. Klimov2 . 1. Shubnikov Institute of Crystallography RAS, Moscow, Russia. 2. Institute of UHF Semiconductor Electronic, Moscow, Russia
P2-43	Characterization of Polymer Semiconductors with TOF-Sims and FTIR. V. Bachurin1, A. Churilov1, O. Kolesnikov1, A. Rudy2, S. Simakin1. 1. Yaroslavl branch of Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl, Russia, 2. Yaroslavl State University, Yaroslavl, Russia.
P2-44	General mechanism of the electric inactivity of the impurity atoms in chalcogenide vitreous semiconductors. G.A. Bordovsky, R.A. Castro, P.P. Seregin, Y.M. Stepanov. Herzen State Pedagogical University of Russia, Saint-Petersburg, Russia
P2-45	Broadband dielectric spectroscopy of As2Se3 modified layers. N.I. Anisimova, V.A. Bordovsky, R.A. Castro, G.I. Grabko, D.S. Kirbiatev, Y.M. Stepanov. Herzen State Pedagogical University of Russia, Saint-Petersburg, Russia

Delayed Posters at Session II

D2-01	Plasma molding in deep silicon reactive ion etching. O. Morozov. Yaroslavl branch of the Institute of Physics & Technology, RAS, Russia.
D2-02	Integration of the DRIE and deep silicon oxidation technologies for suspended MEMS fabrication using standard silicon wafer. *A. Postnikov 1, O. Morozov1, I. Amirov1 , V. Kalnov2. 1. Yaroslavl branch of the Institute of Physics & Technology, RAS, Yaroslavl, Russia. 2. Institute of Physics & Technology, RAS, Moscow, Russia.*
D2-03	SIMS depth profiling of shallow B, P, As in silicon by using TOF.SIMS5 and CAMECA-IMS4F. *S. G. Simakin, E. V. Potapov, O. N. Kolesnikov. Yaroslavl* Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl, Russia.
D2-04	Low-k silicate films prepared by sol-gel process with thermal decomposition of organic species. *V.A. Vasiljev1, D.S. Seregin1, K.A. Vorotilov1, A.S. Sigov1, A.S. Valeev2 .* 1. Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Russia. 2. JSC Mikron, Zelenograd, Russia.
D2-05	Effect of precursor synthesis on ferroelectric properties of PZT FeRAM elements. *D.S. Seregin, Yu.V. Podgorny, N.M. Kotova, K.A. Vorotilov, A.S. Sigov.* Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Russia.
D2-06	Model of the p-n junction modulation effect by the magnetic field. Tikhonov R. D. SMC «Technological Centre» MIEE, Moscow, Russia.

Научная программа — 2009

By: admin-icmne

On: 02.05.2023

In: Научная программа

Monday, October 5th, 2009

9.00 — …Registration & Accommodation
13.00 — 14.00 Lunch

Conference hall

Special Session. Presentations of Hi-Tech Companies

14.30	S-00/1	Milestones of analytical FE-SEM technology — Zeiss Merlin System. Uwe Anton Schubert, Carl Zeiss NTS GmbH, Germany.
15.00	S-00/2	Electron beam lithography tools for nanoelectronic devices. Leonid Litvin, Raith GmbH, Germany
15.30	S-00/3	Applications of Electron Beam Lithography. Martin Kirchner, Raith GmbH, Germany
16.00	S-01	JEOL Industrial Electron Beam Lithography Systems. Mr. Kamide, General Manager of JEOL Semiconductors Equipment Department
16.30	S-02	Nanoimprint Lithography: Principles, Possibilities, and High Volume Manufacturing. Marc Beck. Eurotek, Inc., Germany
17.00	S-03	TechnoInfo products overview. A. Kuznetsov. Technoinfo Ltd., London, UK
17.30	S-04	Technological complexes for MEMS and NEMS research and development. Victor Bykov. NT-MDT Co., Zelenograd, Russia

18.00 — Welcome Party
19.00 — Dinner

Tuesday, October 6th, 2009

8.15 — Breakfast

Conference hall

8.50 — WELCOME REMARKS

E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow
K.A. Valiev, Program Chair, IPT RAS, Moscow

Plenary Session I

Session Chairman: Alexander Orlikovsky, Institute of Physics &Technology RAS, Russia

9.00	L1-01	KEYNOTE: Nanoelectronic devices and materials for the end of the roadmap. G. Ghibaudo and F. Balestra. IMEP-LAHC, Minatec (CNRS-Grenoble INP, UJF, US), Grenoble, France
9.40	L1-02	KEYNOTE: Challenges of Advanced Interconnects: from Cu/low-k to Wireless. T. Kikkawa. Research Institute for Nanodevice and Bio Systems, Hiroshima University, Japan.
10.20	L1-03	INVITED: Electromigration theory and its applications to integrated circuit metallization. T. Makhviladze, M. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia
11.00	L1-04	INVITED: IMEC: from aggressive CMOS scaling to Nanomaterials. Mikhail Baklanov and Patric Verbist. Interuniversitair Microelectronica Centrum (IMEC), Leuven, Belgium.

11.40-12.00 Coffee break. Winter garden

Conference Hall

Session 1. Advanced Lithography

Session Chairman: Vladimir Lukichev, Institute of Physics &Technology RAS, Russia

12.00	L1-05	INVITED: Immersion Lithography and Double Patterning in Advanced Microelectronics. T. Vandeweyer, J. Bekaert, M. Ercken, R. Gronheid, A. Miller, V. Truffert, J. Versluijs, V. Wiaux, P. Wong, G. Vandenberghe, M. Maenhoudt. IMEC vzw, Leuven, Belgium
12.30	O1-01	Projection photolithography modeling using the finite-difference time-domain approach. T. Makhviladze, M. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia.
12.50	O1-02	Influence of thermal annealing on the structural and optical properties of thin multilayer EUV filters containing Zr, Mo and silicides of these metals. N.I. Chkhalo1, S.A. Gusev1, M.N. Drozdov1, E. B. Kluenkov1, A.Ya. Lopatin1, V.I. Luchin1, A.E. Pestov1, N.N. Salashchenko1, L.A. Shmaenok2, N.N. Tsybin1. 1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia 2. PhysTeX, Vaals, Netherlands Institute of Semiconductor.
13.10	O1-03	Manufacturing of diffraction quality optical elements for high resolution optical systems. N.I. Chkhalo, A.E. Pestov, N.N. Salashchenko, M.N. Toropov. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

Auditorium A

Session 2. Simulation and Modeling I

Session Chairman: Vladimir Vyurkov, Institute of Physics &Technology RAS, Russia

12.00	O1-04	Nanoelectronic device simulation software system NANODEV: New opportunities. I.I. Abramov, A.L. Baranoff, I.A. Goncharenko, N.V. Kolomejtseva, Y.L. Bely. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.
12.20	O1-05	The charge sharing inside the layers of nano- CMOS integrated structures under controllable substrate biasing. T. Krupkina, D. Rodionov, A. Shvets, I. Titova. Moscow Institute of Electronic Engineering, Moscow, Russia
12.40	O1-06	*Analysis of lateral thermal SOA for smart power IC’s. Yu. Chaplygin,* А. Krasukov, E. Artamonova.** Moscow Institute of Electronic Technology (Technical University
13.00	O1-07	Advanced atomic-scale simulation of silicon nitride CVD from dichlorosilane and ammonia. T. Makhviladze, A. Minushev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

Auditorium B

Session 3. Photonics and Optoelectronics I

Session Chairman: Sergey Nikitov, Institute of Radioengineering and Electronics RAS, Russia

12.00	O1-08	One-dimensional Photonic Crystals on Silicon as Optical Elements for Integrated Microphotonics. V. Tolmachev1, E. Astrova1, T. Perova2. 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia, 2. Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland
12.20	O1-09	Reduction of noise in atomic system driven by squeezed coherent field. A. Gelman, V. Mironov. Institute of Applied Physics of Russian Academy of Sciences, Nizhny Novgorod , Russia
12.40	O1-10	Enhancement of Optical Properties by Surface Nanostructuring. V.V. Nanumov1 , V.A. Paporkov2 , N.A. Rud2 , E.I. Vaganova1 , A.V. Prokaznikov1. 1. Yaroslavl Branch of Institute of Physics and Technology RAS, Yaroslavl, Russia 2. Yaroslavl State University named after Demidov P.G., Yaroslavl, Russia
13.00	O1-11	Excitation dependence of infrared emission at 1.5-1.6 µm from defect-rich Si layers. A.A. Shklyaev1,2, A.B. Latyshev1,2, M. Ichikawa3 1. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia 3. Quantum-Phase Electronics Center, Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Tokyo, Japan

13.30-14.30 Lunch

Conference Hall

Session 4. Nanodevices and Nanostructures I

Session Chairman: Vitaly Aristov. Institute of Microelectronics Technology, RAS, Russia

14.30	O1-12	Electronic transport in heterogeneous nanometer FET channels. V. P. Popov. Institute of Semiconductor Physics, Novosibirsk, Russia
14.50	O1-13	Ballistic and Pseudo-Relativistic Carrier Transport in Graphene. G. I. Zebrev. Micro- and Nanoelectronics Department, National Research Nuclear University “MEPHI”, Moscow, Russia
15.10	O1-14	Comparative studies of single- and double-nanocrystal layer NVM structures: charge accumulation and retention. V. Turchanikov1, V. Ievtukh1, A. Nazarov1, V. Lysenko1, M. Theodoropoulou2, A.G. Nassiopoulou2 . 1. Lashkaryov Institute of Semiconductor Physics NASU, Kyiv, Ukraine, 2. IMEL/NCSR Demokritos, Athens-Greece
15.30	O1-15	Silicon nanoballs recharging in plasma-chemical oxide of nanometric thickness. M.D. Efremov1,2, S.A. Arzhannikova1,2, V.A. Volodin1,2, G.N. Kamaev1,2, S.A. Kochubei1, I.G. Neizvestny1 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia
15.50	O1-16	Charges and states in nitrided buried dielectrics of SOI structures. V. P. Popov, I.E. Tyschenko. Institute of Semiconductor Physics, Novosibirsk, Russia.

Auditorium A

Session 5. Superconducting Structures and Devices I

Session Chairman: Vladimir Lukichev, Institute of Physics &Technology RAS, Russia

14.30	L1-06	INVITED: Thermo-Electric Charge-to-Voltage Converter with an SIN Tunnel Junction for Bolometer Applications. L. Kuzmin. Chalmers University of Technology, Goteborg, Sweden.
15.00	O1-17	DC SQUID modulation electronics for operation with HTS DC SQUID magnetometers in the unshielded environment. E.V. Burmistrov, V.Yu. Slobodchikov, V.V. Khanin, Yu.V. Maslennikov. Kotel’nikov Institute of Radio Engineering and Electronics of RAS, Moscow, Russia
15.20	O1-18	Properties of planar Nb/?-Si/Nb Josephson junctions with various doped degree of ?-Si interlayers. A.L. Gudkov, A.A. Gogin, A.I. Kozlov, A.N. Samys. CJSC «Compelst», FSUE «SRIPP n. F.V. Lykin», Moscow, Zelenograd, Russia
15.40	O1-19	The theoretical analysis of the new microwave detector based on a Josephson heterostructure. I.A. Devyatov1, M.Yu. Kupriyanov2 . 1. Lomonosov Moscow State University, Russia 2. Skobeltsyn Institute of Nuclear Physics, Moscow, Russia
16.00	O1-20	«Сonventional» SQUIDs and quantum interferometers on matter waves in superfluid helium. *A. Golovashkin1, G. Izma*їlov2, G. Kuleshova3, A. Tshovrebov1, L. Zherikhina1 .** 1. Lebedev Physical Institute, Russian Academy of Science, Moscow, Russia; 2. Moscow Aviation Institute (State Technical University), Moscow, Russia 3. Moscow Engineering Physics Institute (State University) , Moscow, Russia

Auditorium B

Session 6. Thin Films

Session Chairman: Andrey Vasiliev, FSU Enterprise“Pulsar”, Russia

14.30	O1-21	The thermodynamic theory of interfacial adhesion between materials containing point defects. R. Goldstein1, T. Makhviladze2, M. Sarychev2 1. Institute for Problems in Mechanics, Russian Academy of Sciences, Russia, 2. Institute of Physics and Technology, Russian Academy of Sciences, Russia.
14.50	O1-22	The thickness-dependence of the polariton effect in the single quantum well. Yu.V. Moskalev1, S.B. Moskovski2. 1. Yaroslavl State Pedagogical University, Yaroslavl, Russia, 2. Yaroslavl State University, Yaroslavl, Russia
15.10	O1-23	CoSi2/TiO2/SiO2/Si gate structure formation. *A.E. Rogozhin 1, I.A Khorin 1,2, V.V.* *Naumov 1, A.A. Orlikovsky 1, V.V. Ovcharov 1, V.I. Rudakov 1, A.G. Vasiliev 1,3* 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia, 2. Moscow State Institute of Radio-engineering, Electronics and Automation, Moscow, Russia, 3. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
15.30	O1-24	Local performances of PZT films with a thickness less than 100 nanometers. V.M Roshchin, M.V. Silibin. Moscow Institute of Electronic Technologies (Technical University), Zelenograd, Russia
15.50	O1-25	Polysilicon Inductive Elements for IC’s. A.M. Pashayev, F.D. Kasimov., R.A. Ibragimov. National Academy of Aviation, Baku, Azerbaijan

16.30-17.00 Coffee break. Winter garden.

Conference Hall

Session 7. Devices and ICs

Session Chairman: Boris Konoplev,
Taganrog Institute of Technology — Southern Federal University, Russia

17.00	O1-26	SiGe and GaN heterostructure microwave devices. A.G. Vasiliev, Y.V. Kolkovsky, S.V. Korneev, A.A. Dorofeev, V.M. Minnebaev. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia
17.20	O1-27	Methods of cache memory optimization for multimedia applications. A. Kravtsov. JSC Mikron, Moskow, Zelenograd, Russia
17.40	O1-28	Integrated Injection Laser with Amplitude Modulation in Terahertz Band. B. Konoplev1,2, E. Ryndin2, M. Denisenko1. 1. Taganrog Institute of Technology — Southern Federal University, Taganrog, Russia, 2. Southern Scientific Center of Russian Academy of Sciences, Rostov-on-Don, Russia
18.00	O1-29	Gas medium influence on characteristics stability of electroformed structures Si-SiO2-W and reliability of switching processes of memory elements on the basis of these structures. V.M. Mordvintsev, S.E. Kudryavtsev, V.L. Levin, L.A. Tsvetkova. Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Russia
18.20	O1-30	Low-resistance Ge/Au/Ni/Ti/Au based ohmic contact to n-GaAs. E. Erofeev1, V. Kagadei2. 1. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia, 2. Research and production company “Micran”, Tomsk, Russia

Auditorium A

Session 8. Superconducting Structures and Devices II

Session Chairman: Mikhail Kupriyanov, Institute of Nuclear Physics, Moscow State University, Russia.

17.00	O1-31	Manipulating superconductivity with magnetism: from unconventional physical effects to cryogenic spintronics. L.R. Tagirov. Solid State Physics Department, Kazan State University, Kazan, Russia
17.20	O1-32	Magnetic field-tuned superconductor-insulator transition in PbTe/PbS heterostructures with superconducting interface. O. Yuzephovich1,2, S. Bengus1,2, M. Mikhailov1, A. Sipatov3, E. Buchstab4, N. Fogel4 1. Institute for Low Temperature Physics and Engineering, Kharkov, Ukraine, 2. International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland 3. National Technical University “Kharkov Polytechnical Institute” Kharkov, Ukraine 4. Solid State Institute, Technion, Haifa, Israel
17.40	O1-33	Could equilibrium noise be detected with help of series-connected asymmetric superconducting rings? V.L. Gurtovoi, A.I. Ilin, A.V. Nikulov, V.A. Tulin. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia
18.00	O1-34	Superconductivity of polymers with charge injection doping. *A.N. Ionov1, R. Rentzsch2.* 1. A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia, 2. Institut fur Experimentalphysik, Freie Universitat Berlin, Berlin, Germany

Auditorium B

Session 9. Photonics and Optoelectronics II

Session Chairman: Sergey Nikitov, Institute of Radioengineering and Electronics RAS, Russia

17.00	O1-35	CMOS color image sensors. Current state and aspects. *V.A. Gergel1, I.V. Vanyushin2 .* 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia.2. LCC “SensorIС”, Moscow, Russia
17.20	O1-36	Monolithic photodetector 32×32. A.V. Sorochkin, M.V. Yakushev, S.A. Dvoretsky, A.I. Kozlov, I.V. Sabinina, Y.G. Sidorov, B.I. Fomin, A.L. Aseev. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia
17.40	O1-37	Improvement of Radiation Resistance of Multijunction Solar Cells by Application of Bragg Reflectors. V. Emelyanov, N. Kaluzhniy, S. Mintairov, M. Shvarts, V. Lantratov. Ioffe Physico-Technical Institute of RAS, St.-Petersburg, Russia
18.00	O1-38	Polycrystalline Silicon Short Wave Photodetectors. F.D. *Kasimov., N.G. Javadov.* National Academy of Aviation, Baku, Azerbaijan

19.00 Dinner

Wednesday, October 7th 2009

8.15 Breakfast

Conference hall

Plenary Session II. Quantum Informatics

Session Chairman: K.A.Valiev, Institute of Physics and Technology, RAS, Russia

8.50		Introductory Remarks: Quantum informatics and complex systems. Yu.I. Ozhigov. M.V. Lomonosov Moscow State University, Russia
9.00	qL-01	INVITED: Quantum Mechanics as Emergent Phenomenon. A. Khrennikov. International center for mathematical modeling in physics, engineering and cognitive science, University of Vaxjo, Sweden
9.30	qL-02	INVITED: Dynamical Decoupling Pushed to the Extreme. V.M. Akulin. Laboratoire Aime Cotton CNRS ,Orsay, France
10.00	qL-03	INVITED: Tunneling without tunneling: wavefunction reduction in a mesoscopic qubit. J.A. Nesteroff and D. V. Averin. Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, USA
10.30	qL-04	INVITED: Superconducting Qubits. E. Il’ichev. Institute of Photonic Technology, Jena, Germany

11.00 Coffee break

Conference Hall

Session 10. Carbon Nanostructures

Session Chairman: Anatoly Vyatkin, Institute of Microelectronics Technologies, RAS, Russia

11.20	L2-01	INVITED: Carbon nanostructures as new material for emission electronics. Yu. V. Gulyaev. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
12.00	O2-01	Linear-chain carbon films for micro- and nanoelectronics. N.D. Novikov, A.F. Alexandrov, M.B. Guseva, V.V. Khvostov, N.F. Savchenko, Yu.V. Korneeva. Physics Department, M.V. Lomonosov Moscow State University, Moscow, Russia
12.20	O2-02	Fabrication of device structures from single-walled carbon nanotubes selectively grown on patterned catalytic layers. O.V. Kononenko 1 , V.N. Matveev 1 , Yu.A. Kasumov1, I.I. Khodos1, D.V. Matveev2, V.T. Volkov1, A.I. Il’in1, M.A. Knyazev1 1. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia. 2. Institute of Solid State Physics Russian Academy of Sciences, Chernogolovka, Russia
12.40	O2-03	CNS catalyst growth from carbonaceous substrate. E. Ilyichev, V. Inkin, D. Migunov, G. Petruhin, E. Poltoratskii, G. Rychkov, D. Shkodin. FSUE “Res. Inst. of Phys. Problems named after F.V. Lukin”, Zelenograd

Auditorium A

Session 11. Quantum Informatics II

Session Chairman: Yuri Ozhigov, M.V.Lomonosov Moscow State University, Russia

11.20	q2-01	Simulation of entangled nuclei in two-atom association. B. Aksenov, Yu. Ozhigov. Lomonosov Moscow State University, Russia
11.40	q2-02	Could the Schrodinger’s Cat be used as Quantum Bit? V.V. Aristov, A.V. Nikulov.Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia
12.00	q2-03	Unified Statistical Method for Tomography of Quantum States by Purification. Yu.I. Bogdanov. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia
12.20	q2-04	Information aspects of «which way» experiments with microparticles. Yu.I. Bogdanov1, K.A. Valiev1, S.A. Nuyanzin2, A.K. Gavrichenko1. 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia, 2. Moscow Institute of Electronic Technology (Technical University),Zelenograd, Russia
12.40	q2-05	Simulation of electron jumps in the collision of two hydrogen atoms. K. Burtniy1, Yu. Ozhigov1,2. 1. Institute of Physics and Technology, RAS, Moscow, Russia 2. M.V. Lomonosov Moscow State University, Russia

13.00 Lunch

Conference hall

Session 12. Ion and Plasma Processing

Session Chairman: Alexander Efremov, Ivanovo State University of Chemistry & Technology, Russia.

14.00	L2-02	INVITED: Evolution of Ion Implantation Technology Towards sub-45 nm Device Fabrication. S. I. Kondratenko, R. N. Reece, M. S. Ameen, M. A. Harris, and L. M. Rubin. Axcelis Technologies, 108 Cherry Hill Drive, Beverly, MA 01915 USA
14.30	L2-03	INVITED: Challenges and future prospects in plasma etching processes. O. Joubert1, E. Pargon1, T. Chevolleau1, G. Cunge1, L. Vallier1, T. David2, S. Barnola2, T. Lill3. 1. LTM (CNRS-UJF-INPG), France 2. CEA-LETI, France. 3. Applied Materials Inc., Santa Clara, USA
15.00	O2-04	The metal hard-mask approach for contact patterning. J.-F. de Marneffe, D. Goossens, D. Shamiryan, F. Lazzarino, Th. Conard, I. Hoflijk, H. Struyf and W. Boullart. IMEC v.z.w., Leuven, Belgium.
15.20	O2-05	Impact of plasma exposure on organic low-k materials. E. Smirnov1,2, A. K. Ferchichi1, C. Huffman1, M. R. Baklanov1. 1. IMEC vzw, Heverlee, Belgium, 2. Moscow Institute of Electronic Technology, Moscow, Russia
15.40	O2-06	Application of Langmuir probe technique in depositing plasmas for monitoring of etch process robustness and for end-point detection. A.V. Miakonkikh, K.V. Rudenko. Institute of Physics and Technology of RAS , Moscow, Russia.

Auditorium A

Session 13. Quantum Informatics III

Session Chairman: A. Tsukanov, Institute of Physics and Technology, RAS, Russia

14.00	qL-05	INVITED: Quantum Measurement of Open Systems. L. Fedichkin. Michigan State University, East Lansing, USA
14.30	q2-06	Quantum Entanglement and its Observation at Measurement of Magnetic Succeptibility and in Multiple Quantum NMR Experiments. E.B. Fel’dman. Institute of Problems of Chemical Physics of Russian Academy of Sciences, Chernogolovka, Moscow Region
14.50	q2-07	The qubit states decoherence in antiferromagnet-based nuclear spin model of quantum register. A.A. Kokin1, V.A. Kokin2. 1. Institute of Physics and Technology of RAS , Moscow, Russia 2. Institute of Radioengineering and Electronics of RAS, Moscow Russia
15.10	q2-08	Quantum Double Helix. A.Yu. Okulov. General Physics Institute of Russian Academy of Sciences, Moscow, Russia
15.30	q2-09	Time-optimal control of quantum dynamics of a quadrupole nucleus by NMR techniques. V.P. Shauro, V.E. Zobov. L.V.Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russia
15.50	q2-10	Resonant dipole-dipole interaction of a few cold Rydberg atoms in a magneto-optical trap. D.B. Tretyakov1, I.I. Beterov1, V.M. Entin1, I.I. Ryabtsev1, P.L. Chapovsky2 1. Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia, 2. Institute of Automation and Electrometry SB RAS, Novosibirsk, Russia

Auditorium B

Session 14. Simulation and Modeling II

Session Chairman: Tariel Makhviladze, Institute of Physics &Technology RAS, Russia

14.00	O2-07	Mathematical modeling of a fast neutrals beam source neutralization channel. A.V. Degtyarev, V.P. Kudrya, Yu.P. Maishev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia
14.20	O2-08	TCAD technique to simulate total dose effects in SOI MOSFETs. K. Petrosjanc, I. Kharitonov, E. Orekhov. Moscow State Institute of Electronics and Mathematics (Technical University), Moscow, Russia
14.40	O2-09	Optimization of near-surficial annealing for decreasing of depth of p-n-junction in semiconductor heterostructure. E.L. Pankratov. The Mathematical Department, Nizhny Novgorod State University of Architecture and Civil Engineering,, Nizhny Novgorod, Russia
15.00	O2-10	Research of current injection process in to the substrate during digital gate switching. T. Krupkina, D. Rodionov. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia
15.20	O2-11	Extrinsic Compact MOSFET Model with Correct Account of Positive Differential Conductivity after Saturation. V.O. Turin1, A.V. Sedov1, G.I. Zebrev2, B. Iniguez3,M.S. Shur4 1. Orel State Technical University, Orel, Russia, 2. National Research Nuclear University “MEPHI”, Moscow, Russia, 3. Rovira i Virgili University, Tarragona, Spain, 4. Rensselaer Polytechnic Institute, Troy, NY, USA
15.40	O2-12	Informational charge readout dynamics and non-linearity of photosignal characteristics of active pixels in CMOS image sensors. A.V. Verhovtseva, V.A. Gergel’, V.A. Zimoglyad. LLC RPC «SensorIS», Moscow, Russia

16.10 Coffee break

16.30 Entresol. POSTER SESSION I

16.30. Bottom hall. EXHIBITION

17.00. Conference Hall. Presentations of Hi-Tech Companies

17.00	S-05	Surface Metrology measurements; from nanometer to millimeter scale. P. Markus. Veeco Instruments Inc., USA
17.30	S-06	Advances in Cryofree Ultra-Low-Temperatures and integrated high magnetic fields. S. Mitchinson. Oxford Instruments Nanosciences Ltd., UK

19.00 Dinner

Thursday, October 8th 2009

08.15 Breakfast

Conference hall

Session 15. Nanostructures Fabrication Techniques

Session Chairman: Anatoly Vyatkin, Institute of Microelectronics Technologies, RAS, Russia

09.00	О3-01	Nucleation and growth of Ge nanoislands on pit-patterned Si substrates. J.V. Smagina1, P.L. Novikov1, A.S. Deryabin1, E.E. Rodyakina, D.A. Nasimov1, B.I. Fomin1, V.A. Zinovyev1, A.V. Dvurechenskii1,2 . 1. Institute of Semiconductor Physics SB RA , Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia.
09.20	O3-02	Nanoscale Si/SiO2 superlattices produced by plasma-chemical technology. S.A. Arzhannikova1,2, M.D. Efremov1,2, A.Kh. Antonenko1,2, V.A. Volodin1,2, G.N. Kamaev1,2, D.V. Marin1,2, S.A. Kochubei1, A.A. Voschenkov1 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia
09.40	O3-03	Impurity activation and nanocrystals formation using excimer lasers. M.D. Efremov1,2, S.A. Arzhannikova1,2, V.A. Volodin1,2, G.N. Kamaev1,2, S.A. Kochubei1, I.G. Neizvestny1. 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia
10.00	O3-04	Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. V.A. Volodin1,2, T.T. Korchagina1, G.N. Kamaev1, A.H. Antonenko1, J. Koch3, B.N. Chichkov3. 1. Institute of Semiconductor Physics, Russian Academy of Sciences, , Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia. 3. Laser Zentrum Hannover, Hannover, Germany
10.20	O3-05	Optical diagnostics of GaAs nanoheterostructures growth processes. I.P. Kazakov, E.V. Glazyrin, V.I. Tsekhosh. P.N. Lebedev Physical Institute of Russian Academy of Sciences, Moscow, Russia
10.40	O3-06	Low voltage micro lens ion beam column for nano-patterning with resolution of 1.5?2 nm. Numerical simulation and prospects. V.A. Zhukov1, S. Kalbitzer2, A. I. Titov3 1. Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia, 2. Ion Beam Technology, D-69121 Heidelberg, Germany, 3. St. Petersburg State Technical University, St. Petersburg, Russia

Auditorium A

Session 16. Quantum Informatics IV

Session Chairman: Yu.I.Bogdanov, Institute of Physics and Technology, RAS, Russia

09.00	q3-01	Quantum computer without uncontrollable Coulomb interaction among space-based qubits. *S. Filippov, V. Vyurkov.* Institute of Physics and Technology, RAS, Moscow, Russia
09.20	q3-02	Quantum information transfer protocol via optimized single-electron transport in semiconductor nanostructure. A.V. *Tsukanov.* Institute of Physics and Technology, RAS, Moscow, Russia
09.40	q3-03	Outlook for the application of Ge/Si quantum dots in quantum calculations. A. Zinovieva1, A. Nenashev1, A. Dvurechenskii1, A.I. Nikiforov1, A. Lyubin1, L. Kulik2. 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Institute of Chemical Kinetics and Combustion, Novosibirsk, Russian Academy of Sciences Russia
10.00	q3-04	The quantum dynamics of two coupled large spins. V.E. Zobov. L.V. Kirensky Institute of Physics, SB Russian Academy of Sciences,Krasnoyarsk, Russia
10.20	q3-05	Can entanglement fluctuate? M. A. Yurishchev. Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Russia

Auditorium B

Session 17. Simulation and Modeling III

Session Chairman: Igor Abramov, Belarusian State University of Informatics & Radioelectronics, Belarus

9.00	O3-07	The influence of the suboxide layer structure on equivalent oxide thickness in nanoscale MIS-structure. N.A. Zaitsev, G.Ya Krasnikov, Matyushkin I.V. Micron Corp., Moscow, Zelenograd, Russia
9.20	O3-08	Semi-analytical model of a field-effect transistor with an ultra-thin channel. A. Khomyakov, V. Vyurkov. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia
9.40	O3-09	Impact of channel inhomogeneities on characteristics of a quantum field-effect transistor. V. Vyurkov, I. Semenikhin, V. Lukichev, A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia
10.00	O3-10	*Bulk and Nanoribbon Graphene Field-Effect Transistor Modeling. G.I. Zebrev1, E.A. Zotkin1,* А.А. Tselykovskiy1, E.V. Melnik1, V.O. Turin2 .** 1. Micro- and Nanoelectronics Department, National Research Nuclear University “MEPHI”, Moscow, Russia, 2. Orel State Technical University, Orel, Russia
10.20	O3-11	Electron optical spin polarization in broken-gap heterostructures. A. Zakharova1, K. A. Chao2, I. Semenikhin1. 1. Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia, 2. Department of Physics, Lund University, Lund, Sweden, and Department of Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden

11.00 Coffee break

Conference hall

Session 18. Magnetic Micro- and Nanostructures

Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS, Russia

11.30	O3-12	High-temperature magnetization and Mossbauer spectra of nanoparticles in a weak magnetic field. M. A. Chuev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia.
11.50	O3-13	Mossbauer study of nanomagnetics. V.I. Bachurin1, I.N. Zakharova1, M.A. Shipilin2, A.M. Shipilin3 . 1. Yaroslavl State Technical University, Yaroslavl, Russia, 2. P.G.Demidov Yaroslavl State University, Yaroslavl, Russia, 3. M.V. Lomonosov Moscow State University, Moscow, Russia
12.10	O3-14	Ferromagnetic resonance and magnetoelastic demodulation in giant magnetostriction TbCo2/FeCo nanostructured thin film. A. Klimov1,2, Yu. Ignatov2, S. Nikitov2, N. Tiercelin1, V. Preobrazhensky1,3, P. Pernod1. 1. LEMAC–IEMN CNRS, Ecole Centrale de Lille, France 2. Kotel’nikov Institute of Radioengineering and Electronics (IRE RAS),Moscow, Russia 3. Wave Research Center, A.M. Prokhorov General Physics Institute RAS, Moscow, Russia
12.30	O3-15	Odd-even effects in magnetic nanostructures. V.V. Kostyuchenko. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl, Russia
12.50	O3-16	Magnetoresistance of multilayer ferromagnetic nanoparticles. S.N. Vdovichev, A.A. Fraerman, B.A. Gribkov, S.A. Gusev, A.Yu. Klimov, V.L. Mironov, V.V. Rogov. Institute for Physics of Microstructures, Russian Academy of Science, Nizhniy Novgorod, Russia

Auditorium A

Session 19. Quantum Informatics V

Session Chairman: Yuri Ozhigov, M.V.Lomonosov Moscow State University, Russia

11.30	q3-06	Quantum cryptography system using phase-time coding and resistant to PNS attack. D.A. Kronberg1 , S.N. Molotkov1,2,3 1. Faculty of Computational Mathematics and Cybernetics, Moscow State University, Moscow, Russia 2. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia. 3. Academy of Cryptography of the Russian Federation, Moscow, Russia
11.50	q3-07	Entanglement measure for multipartite pure states and its numerical calculation. A. Yu. Chernyavskiy. Institute of Physics & Technology of RAS (FTIAN), Moscow, Russia
12.10	q3-08	Quantum Computing with Collective Ensembles of Multilevel Systems. E. Brion, K. Molmer, and M. Saffman. Laboratoire Aime Cotton (CNRS), Orsay, France
12.30	q3-09	Spin-1/2 systems with simple two- and three-dimensional geometrical configurations: state transfer and entanglement between different nodes. S.I. Doronin, E.B. Fel’dman and A.I. Zenchuk Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow reg., Russia
12.50	q3-10	Flux-qubit and the law of angular momentum conservation. A.V. Nikulov. Institute of Microelectronics Technology, Russian Academy of Sciences,Chernogolovka, Moscow District, Russia.

Auditorium B

Session 20. Micro- and Nanostructures Characterization I

Session Chairman: Eduard Rau, Moscow State University, Moscow, Russia

11.30	O3-17	SEM Probe Defocusing Method of Measurement of Linear Sizes of Nanorelief Elements. M.N. Filippov1, Yu.A. Novikov2, A.V. Rakov3, P.A. Todua3. 1. N.S. Kurnakov General and Inorganic Chemistry Institute of the Russian Academy of Sciences, Moscow, Russia, 2. A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia. 3. Center for Surface and Vacuum Research, Moscow, Russia
11.50	O3-18	SEM Relief Structure Images with Trapezoid Profile and Big Inclination Angle of Side Walls in Back Scattered Electrons. M.N. Filippov1, Yu.A. Novikov2, A.V. Rakov3, P.A. Todua3. 1. N.S. Kurnakov General and Inorganic Chemistry Institute of the Russian Academy of Sciences, Moscow, Russia, 2. A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia. 3. Center for Surface and Vacuum Research, Moscow, Russia
12.10	O3-19	Combined electron-beam method of the diagnostic of microelectronic structures in scanning electron microscopy. F.A. Lukyanov1 , N.A. Orlikovsky2 , E.I. Rau3 , R.A. Sennov3. 1. Moscow State University, Moscow, Russia 2. Institute of Physic and Technology RAS, Moscow, Russia. 3. Institute of Microelectronics Technology RAS, Chernogolovka, Moscow Region, Russia
12.30	O3-20	Problems of AFM-investigations of open sandwich MIM-structures. E.S. Gorlachev, V.M. Mordvintsev, V.L. Levin. Yaroslavl Branch of the Institute of Physics and Technology RAS, Yaroslavl, Russia
12.50	O3-21	Correct measurements of capacity using atomic force microscope. A.A. Chouprik, A.S. Baturin. Moscow Institute of Physics and Technology, Dolgoprudny, Russia

13.20 Lunch

Conference hall

Session 21. Plasma Physics and Technologies

Session Chairman: Konstantin Rudenko, Institute of Physics &Technology RAS, Russia

14.20	L3-01	INVITED: *Problems of nano-sized and high aspect ratio features plasma etching. V. Lukichev1, K. Rudenko1, A. Orlikovsky1, V. Yunkin2.* 1. Institute of Physics & Technology (FTIAN) 2. Institute of Microelectronics Technology,Russian Academy of Sciences, Russia
14.50	O3-22	Modeling of plasma reactive ion etching of ultra high aspect ratio Si trenches. *I.I.Amirov1, A.S.Shumilov1, A.N.Kupriynov1, V.F.Lukichev2 .* 1. Institute RAS Yaroslavl branch of the Institute of Physics & Technology RAS, Yaroslavl, Russia, 2. Institute of Physics & Technology (FTIAN), Russian Academy of Sciences, Moscow, Russia
15.10	O3-23	Plasma parameters and active particles kinetics in HBr dc glow discharges. A. Smirnov1,2, A. Efremov1, V. Svettsov1, A. Islyaykin2. 1. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia, 2. Mikron JSC, Zelenograd, Moscow, Russia
15.30	O3-24	Mechanisms of film deposition from BCl3-based plasma during dry etching. D. Shamiryan1 , A.M. Efremov2 , V. Serlenga3 , M.R. Baklanov1, W. Boullart1. 1. IMEC, Leuven, Belgium 2. Ivanovo State University of Chemistry and Technology, Ivanovo, Russia 3. Instituto Universitario di Studi Superiori, Pavia, Italy
15.50	O3-25	Excitation Mechanism of the B+ Emission Line at 345.1 nm in Low-Temperature Plasma. V.P. Kudrya. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

Auditorium A

Session 22. Quantum Informatics VI

Session Chairman: Yuri Ozhigov, M.V.Lomonosov Moscow State University, Russia

14.20	q3-11	Implementation of the quantum order-finding algorithm by adiabatic evolution of two qubits. A.S. Ermilov, V.E. Zobov. L. V. Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, 660036, Krasnoyarsk, Russia
14.40	q3-12	NMR Saturation and Entanglement in Solids. M. Kutcherov. Siberian Federal University, Krasnoyarsk, Russia
15.00	q3-13	Quantum Scattering on Dypole Potential in Adiabatic Approximation. K.S. Arakelov. M.V.Lomonosov Moscow State University, Russia
15.20	16.20	Round Table Discussion: Quantum Systems in Computer Simulation

Auditorium B

Session 23. Micro- and Nanostructures Characterization II

Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS, Russia

14.20	O3-26	De-processing technologies for modern VLSI based on grazing incident ion beams. A.F. Vyatkin. Institute of Microelectronics Technologies, Russian Academy of Sciences, Chernogolovka, Russia
14.40	O3-27	Development of computer methods for multi nano-layer parameters measurements by X-Ray reflectometry. N.N. Gerasimenko1, D.A. Kartashov2, A.G. Turyansky3 . 1. Moscow Institute of Electronic Technology, Moscow, Zelenograd, Russia, 2. JSC Mikron, Moscow, Zelenograd, Russia, 3.LPI, Moscow, Russia
15.00	O3-28	Experimental scheme for observation of anomalous Kossel effect in semiconductor structures. P.G. Medvedev, M.A. Chuev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia
15.20	O3-29	Structural Investigation of Magnetic Digital Alloys. I.A. Subbotin1, M.A. Chuev2, V.V. Kvardakov1, I.A. Likhachev1, E.M. Pashaev1. 1. Russian Research Center “Kurchatov Institute”, Moscow, Russia. 2. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia
15.40	O3-30	Spectroscopic and scanning ellipsometry for investigation of surfaces, thin films and nanolayers. V. Tolmachev1, T. Zvonareva1, L. Portzel1, V. Kudoyarova1, T. Perova2, V. Shvets3, S. Rykhlitskii3 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia 2. Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland, 3. Semiconductor Physics Institute SB RAS, Novosibirsk, Russia
16.00	O3-31	Temperature of one-side polished silicon wafer at different position relatively incoherent radiance source. V.I. Rudakov, V.V. Ovcharov, V.P. Prigara. Yaroslavl Branch of Institute of Physics and Technology RAS

16.30 Coffee break

16.45 Entresol. POSTER SESSION II

Bottom hall. EXHIBITION

18.45. Conference Hall. CLOSING CONFERENCE REMARKS
А.А. Orlikovsky, Chair of Organizing Committee ICMNE-2009,
Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

19.30 BANQUET

Friday, October 9th, 2009

09.00 Breakfast

10.00 DEPARTURE

Информация о IC MNE 2021 и QI 2021

By: admin-icmne

On: 27.04.2023

In: История, Конференции

Общая информация

14-я Международная конференция «Микро- и наноэлектроника – 2021» (ICMNE-2021), включающая расширенную сессию «Квантовая информатика», проводилась в очно-заочной форме 4-8 октября 2021 в парк-отеле «Ершово», Звенигород, Московская область, Россия.

Тематика:

Физика микро- и наноразмерных приборов:

Проблемы и пути масштабирования наноразмерных приборов и интегральных схем.
Нанотранзисторы: CMOS FET, TFET, SET, молекулярные транзисторы и переключатели и т.д.
Интегральные устройства памяти: DRAM, ReRAM, FeRAM.
Приборы с 1D и 2D каналами.
Углеродная микро- и наноэлектроника.
Твердотельные приборы для THz генерации и детектирования.
Магнитные микро- и наноструктуры и приборы, спинтроника.
Сверхпроводящие микро- и наноприборы и устройства.
Приборы оптоэлектроники, фотоники.
Сенсоры, микро- и наноэлектромеханические системы (MEMS, NEMS, BioMEMS).
Моделирование приборов.

Технология и характеризация материалов для микро- и наноэлектроники:

Si, SOI, SiGe, A³B⁵, A²B⁶.
High-k, low-k диэлектрики.
Металлические пленки в приборных структурах УБИС.
1D, 2D материалы.
Магнитные материалы, наномагнетики.
Материалы оптоэлектроники, фотовольтаики, метаматериалы.

Технологические процессы и перспективное технологическое оборудование микро- и наноэлектроники:

Литография: иммерсионная, EUV, электронная и ионная литография, наноимпринт.
Front-End of Line (FEOL) процессы для технологии УБИС.
Back-End of Line (BEOL) процессы для технологии УБИС.
Технологии 3D-интеграции интегральных схем.
Технологии 2D материалов и структур для наноэлектроники (графен, MoS₂, WS₂ и др.)
Технологии 1D структур (нанопровода, нанотрубки).
Технологии MEMS, NEMS, BioMEMS.
Технологии изготовления сверхпроводящих приборов.

Метрология:

Методы диагностики и управления технологическими процессами In situ (End-point детекторы, смарт-сенсоры).
Методы контроля, диагностики и характеризации микро- и наноструктур.

Квантовая информатика:

Квантовые компьютеры: теория и эксперимент.
Квантовые измерения.
Квантовые алгоритмы.
Квантовая связь.
Квантовые сенсоры.

Организаторы и спонсоры:

Oтделение нанотехнологий и информационных технологий РАН
Физико-технологический институт им. К.А. Валиева РАН, Москва, Россия
АО «НИИМЭ», Зеленоград, Россия
TechnoInfo Ltd., Wembley, UK
Компания НИКС, Москва, Россия
SPIE – The International Society for Optical Engineering
Журнал «Микроэлектроника», Москва, Россия

Вы можете скачать pdf-файлы программы конференции и сборника тезисов.

Информация о IC MNE 2018 и QI 2018

By: admin-icmne

On: 24.04.2023

In: История, Конференции

Общая информация

Международная конференция «Микро- и наноэлектроника – 2018» (ICMNE-2018), включающая расширенную сессию «Квантовая информатика» (QI-2018), проводилась 1-5 октября 2018 в парк-отеле «Ершово», Звенигород, Московская область, Россия.

Тематика:

Физика микро- и наноразмерных приборов:

Проблемы и пути масштабирования наноразмерных приборов и интегральных схем.
Нанотранзисторы: CMOS FET, TFET, SET, молекулярные транзисторы и переключатели и т.д.
Интегральные устройства памяти: DRAM, ReRAM, FeRAM.
Приборы с 1D и 2D каналами.
Углеродная микро- и наноэлектроника.
Твердотельные приборы для THz генерации и детектирования.
Магнитные микро- и наноструктуры и приборы, спинтроника.
Сверхпроводящие микро- и наноприборы и устройства.
Приборы оптоэлектроники, фотоники.
Сенсоры, микро- и наноэлектромеханические системы (MEMS, NEMS, BioMEMS).
Моделирование приборов.

Технология и характеризация материалов для микро- и наноэлектроники:

Si, SOI, SiGe, A³B⁵, A²B⁶.
High-k, low-k диэлектрики.
Металлические пленки в приборных структурах УБИС.
1D, 2D материалы.
Магнитные материалы, наномагнетики.
Материалы оптоэлектроники, фотовольтаики, метаматериалы.

Технологические процессы и перспективное технологическое оборудование микро- и наноэлектроники:

Литография: иммерсионная, EUV, электронная и ионная литография, наноимпринт.
Front-End of Line (FEOL) процессы для технологии УБИС.
Back-End of Line (BEOL) процессы для технологии УБИС.
Технологии 3D-интеграции интегральных схем.
Технологии 2D материалов и структур для наноэлектроники (графен, MoS₂, WS₂ и др.
Технологии 1D структур (нанопровода, нанотрубки).
Технологии MEMS, NEMS, BioMEMS.
Технологии изготовления сверхпроводящих приборов.

Метрология:

Методы диагностики и управления технологическими процессами In situ (End-point детекторы, смарт-сенсоры).
Методы контроля, диагностики и характеризации микро- и наноструктур.

Квантовая информатика:

Квантовые компьютеры: теория и эксперимент.
Квантовые измерения.
Квантовые алгоритмы.
Квантовая связь.

Организаторы и спонсоры:

Физико-технологический институт РАН, Москва, Россия
АО «НИИМЭ», Зеленоград, Россия
Российский фонд фундаментальных исследований, Москва, Россия
Oтделение нанотехнологий и информационных технологий РАН
SPIE – The International Society for Optical Engineering
Институт физики полупроводников им. А.В. Ржанова СО РАН, Новосибирск, Россия
Московский государственный университет им. М.В. Ломоносова, Москва, Россия
Ярославский государственный университет им. П.Г. Демидова, Ярославль, Россия
TechnoInfo Ltd., Wembley, UK
Компания НИКС, Москва, Россия

Вы можете скачать pdf-файлы программы конференции и сборника тезисов.

Информация о IC MNE 2016 и QI 2016

By: admin-icmne

On: 24.04.2023

In: История, Конференции

Общая информация

Международная конференция «Микро- и наноэлектроника – 2016» (ICMNE-2016), включающая расширенную сессию «Квантовая информатика» (QI-2016), проводилась 3-7 октября 2016 в д/о «Ершово», Звенигород, Московская область, Россия.

Тематика:

Материалы и пленки для микро- и наноэлектронных структур:

Si, SOI, DOI, SiGe, A³B⁵, A²B⁶
High-k диэлектрики, low-k диэлектрики
Металлы для затворов, контактов и систем металлизации наноразмерных приборов
Магнитные материалы, наномагнетики
1D и 2D материалы
Материалы для оптоэлектроники, солнечной энергетики, метаматериалы

Физика микро- и наноразмерных приборов:

Тенденции масштабирования: More Moore, beyond CMOS, and more than Moore trends
Нанотранзисторы: CMOS FET, TFET, SET, молекулярные и другие
Интегральные устройства памяти, DRAM, ReRAM, FeRAM
Магнитные микро- и наноструктуры, приборы спинтроники
Сверхпроводящие микро- и наноприборы и устройства
Приборы оптоэлектроники, фотоники
Микро- и наноэлектромеханические системы (MEMS, NEMS)
Моделирование

Технологии и перспективное технологическое оборудование для производства приборов микро- и наноэлектроники:

Суб-65 нм литография: DUV, иммерсионная, EUV, электронная и ионная литография, наноимпринт
Front-End of Line (FEOL) процессы для технологии УБИС
Back-End of Line (BEOL) процессы для технологии УБИС
Технологии получения 2D материалов (графен, MoS₂, WS₂ и др.)
Технологии создания МЭМС и НЭМС
Технологии создания сверхпроводящих приборов

Метрология:

In situ методы мониторинга технологических процессов
Методы контроля, диагностики и характеризации микро- и наноструктур

Квантовая информатика:

Квантовые компьютеры: теория и эксперимент
Квантовые измерения
Квантовые алгоритмы
Квантовая связь

Организаторы и спонсоры:

Физико-технологический институт, Москва, Россия
АО «Научно-исследовательский институт молекулярной электроники», Зеленоград, Россия
Российский фонд фундаментальных исследований, Москва, Россия
Российская академия наук, Oтделение нанотехнологий и информационных технологий
Научный Совет РАН по физическим и химическим основам полупроводникового материаловедения
SPIE – The International Society for Optical Engineering, USA — the publisher of the Conference proceedings
Институт физики полупроводников, Новосибирск, Россия
Московский государственный университет им. М.В. Ломоносова, Москва, Россия
Ярославский государственный университет им. П.Г. Демидова, Ярославль, Россия
TechnoInfo Ltd., Wembley, UK
Компания НИКС, Москва, Россия
ЗАО «НТО» (SemiTEq), Санкт-Петербург, Россия

Вы можете скачать pdf-файлы программы конференции и сборника тезисов.

Информация о IC MNE 2014 и QI 2014

By: admin-icmne

On: 24.04.2023

In: История, Конференции

Общая информация

Международная конференция «Микро- и наноэлектроника – 2014» (ICMNE-2014), включающая расширенную сессию «Квантовая информатика» (QI-2014), проводилась 6-10 октября 2014 в д/о «Ершово», Звенигород, Московская область, Россия.

Тематика:

Материалы и пленки для микро- и наноэлектроники:

КНИ, Si, SiGe, A³B⁵, A²B⁶
Тонкие пленки, high-k диэлектрики, low-k диэлектрики
Материалы для металлических затворов, контактов и систем металлизации микро- и наноразмерных приборов
Магнитные материалы, наномагнетики
Нанотрубки, графен
Материалы для оптоэлектроники, солнечной энергетики, метаматериалы

Технологии микро- и наноэлектроники, технологическое оборудование:

Суб-100 нм литография: DUV, EUV, электронная и ионная литография, наноимпринт
Плазменные и ионно-пучковые процессы и технологии для микро- и наноэлектроники
Ионная имплантация: пучковая и плазменно-иммерсионная
Процессы CVD, молекулярная эпитаксия

Метрология:

Методы мониторинга технологических процессов, определение момента окончания процессов
Методы диагностики и характеризация микро- и наноструктур

Физика и технология микро- и наноразмерных приборов:

Нанотранзисторы: МДП, одноэлектронные, тонкопленочные и другие
Интегральные устройства памяти, мемристоры
Магнитные микро- и наноструктуры
Приборы спинтроники
Сверхпроводящие микро- и наноприборы и устройства
Приборы оптоэлектроники, фотоники
Микро- и наноэлектромеханические системы (MEMS, NEMS)

Моделирование:

Моделирование технологических процессов
Моделирование микро- и наноэлектронных приборов

КНИ и низкоразмерные структуры:

Технология и эксперименты
Приборы
Теория и моделирование

Квантовая информатика:

Квантовые компьютеры: теория и эксперимент
Квантовые измерения
Квантовые алгоритмы
Квантовая связь

Организаторы и спонсоры:

Физико-технологический институт (ФТИАН), Москва, Россия
ОАО «НИИМЭ и Микрон», Зеленоград, Россия
Российский фонд фундаментальных исследований, Москва, Россия
Федеральное агенство научных организаций, Москва, Россия
Российская академия наук, Oтделение нанотехнологий и информационных технологий
Научный Совет РАН по физическим и химическим основам полупроводникового материаловедения
SPIE – The International Society for Optical Engineering
Институт физики полупроводников, Новосибирск, Россия
Московский государственный университет им. М.В. Ломоносова, Москва, Россия
Ярославский государственный университет им. П.Г. Демидова, Ярославль, Россия
TechnoInfo Ltd., Wembley, UK
Компания НИКС, Москва, Россия

Вы можете скачать pdf-файлы программы конференции и сборника тезисов.

Информация о IC MNE 2012 и QI 2012

By: admin-icmne

On: 24.04.2023

In: История, Конференции

Общая информация

Международная конференция «Микро- и наноэлектроника – 2012» (ICMNE-2012), включающая расширенную сессию «Квантовая информатика» (QI-2012) и семинар «Кремний на изоляторе» (SOI-2012), проводилась 1-5 октября 2012 в пансионате «Липки», Звенигород, Московская область, Россия.

Тематика:

Материалы и пленки для микро- и наноэлектроники:

КНИ, Si, SiGe, A³B⁵, A²B⁶
Тонкие пленки, high-k диэлектрики, low-k диэлектрики
Материалы для металлических затворов, контактов и систем металлизации микро- и наноразмерных приборов
Магнитные материалы, наномагнетики
Нанотрубки, графен
Материалы для оптоэлектроники, солнечной энергетики, метаматериалы

Технологии микро- и наноэлектроники, технологическое оборудование:

Суб-100 нм литография: DUV, EUV, электронная и ионная литография, наноимпринт
Плазменные и ионно-пучковые процессы и технологии для микро- и наноэлектроники
Ионная имплантация: пучковая и плазменно-иммерсионная
Процессы CVD, молекулярная эпитаксия

Метрология:

Методы мониторинга технологических процессов, определение момента окончания процессов
Методы диагностики и характеризация микро- и наноструктур

Физика и технология микро- и наноразмерных приборов:

Нанотранзисторы: МДП, одноэлектронные, тонкопленочные и другие
Интегральные устройства памяти, мемристоры
Магнитные микро- и наноструктуры
Приборы спинтроники
Сверхпроводящие микро- и наноприборы и устройства
Приборы оптоэлектроники, фотоники
Микро- и наноэлектромеханические системы (MEMS, NEMS)

Моделирование:

Моделирование технологических процессов
Моделирование микро- и наноэлектронных приборов

КНИ и низкоразмерные структуры:

Технология и эксперименты
Приборы
Теория и моделирование

Квантовая информатика:

Квантовые компьютеры: теория и эксперимент
Квантовые измерения
Квантовые алгоритмы
Квантовая связь

Организаторы и спонсоры:

Российская академия наук (РАН), Oтделение нанотехнологий и информационных технологий
Российский фонд фундаментальных исследований (РФФИ)
Научный Совет РАН по физическим и химическим основам полупроводникового материаловедения
Физико-технологический институт РАН (ФТИАН), Москва, Россия
Учебно-научный центр «МГУ – ФТИАН», Москва, Россия
SPIE – The International Society for Optical Engineering
Институт физики полупроводников (ИФП) СО РАН, Новосибирск, Россия
Московский государственный университет им. М.В. Ломоносова (МГУ), Москва, Россия
Ярославский государственный университет им. П.Г. Демидова (ЯрГУ), Ярославль, Россия
TechnoInfo Ltd., Wembley, UK
Компания НИКС, Москва, Россия

Вы можете скачать pdf-файлы программы конференции и сборника тезисов.

Информация о IC MNE 2009 и QI 2009

By: admin-icmne

On: 24.04.2023

In: История, Конференции

Общая информация

Международная конференция“Микро- и наноэлектроника – 2009” (ICMNE-2009) включающая расширенные сессии “Квантовая информатика” (QI-2009) проводилась 5-9 октября, 2009 в пансионате “Липки”, Звенигород, Московская область, Россия.

Тематика:

Материалы, пленки для микро- и наноэлектроники:

КНИ, напряженный Si, SiGe, GaAs, GaN
Тонкие пленки, high-k диэлектрики, low-k диэлектрики
Материалы для металлических затворов, контактов и систем металлизации микро- и наноразмерных приборов
Магнитные материалы. Наномагнетики
Нанотрубки
Материалы для оптоэлектроники, солнечной энергетики, метаматериалы

Технологии микро- и наноэлектроники, технологическое оборудование:

Суб-100 нм литография: DUV, EUV, электронная и ионная литография, наноимпринт
Плазменные процессы и технологии для микро- и наноэлектроники
Ионная имплантация: пучковая и плазменно-иммерсионная
Процессы CVD, молекулярная эпитаксия

Метрология:

Методы мониторинга технологических процессов, определение момента окончания процессов
Методы диагностики и характеризация микро- и наноструктур

Физика и технология микро- и наноразмерных приборов:

Нанотранзисторы: МДП, одноэлектронные. Память на квантовых точках. Интегральная схемотехника
Магнитные микро- и наноструктуры
Спинтроника
Сверхпроводящие микро-, наноприборы и системы
Молекулярная электроника
Приборы оптоэлеткроники, фотоники
Микро- и нано- электромеханические системы (MEMS, NEMS)

Моделирование:

Моделирование технологических процессов
Моделирование микро- и наноэлектронных приборов, устройств
Моделирование ИС

Квантовая информатика:

Quantum computer and complex quantum systems modeling (quantum computer problems, computer simulation of quantum systems, decoherence, entanglement)
Quantum information processing (quantum information, applications of quantum methods)

Quantum cryptography (quantum channels, nonlocality, security, error correction)

Организаторы и спонсоры:

Российская Академия Наук (РАН), Oтделение нанотехнологий и информационных технологий
Министерство образования и науки Российской Федерации
Российский фонд фундаментальных исследований (РФФИ)
Научный Совет РАН “Фундаментальные проблемы создания элементной базы информационно-вычислительных и управляющих систем”
Научный Совет РАН по физическим и химическим основам полупроводникового материаловедения
Физико-технологический институт РАН (ФТИАН), Москва, Россия
Учебно-научный центр «МГУ – ФТИАН»
SPIE – The International Society for Optical Engineering
Институт физики полупроводников (ИФП) СО РАН, Новосибирск, Россия
Московский Государственный Университет им. М.В.Ломоносова (МГУ), Россия
Ярославский Государственный Университет им. П.Г.Демидова (ЯрГУ), Россия
Московский институт электронной техники (МИЭТ, ТУ), Зеленоград, Россия
OAO “НИИМЭ и Микрон”, Россия
INTEL, Inc., USA
Fraunhofer Institute of Integrated Systems and Device Technology (FhG IIS-B), Germany
Carl Zeiss AG, Germany
TechnoInfo Ltd, UK
Компания НТ-МДТ, Россия
Компания НИКС , Россия

Вы можете скачать pdf-файлы программы конференции и сборника тезисов.

Информация о IC MNE 2007 и QI 2007

By: admin-icmne

On: 28.03.2023

In: История, Конференции, Научная программа

Общая информация

Международная конференция «Микро- и наноэлектроника – 2007» (ICMNE-2007), включающая расширенную сессию «Квантовая информатика», проводилась 1-5 октября 2007 в отеле «Липки», Звенигород, Московская область, Россия.

Вы можете скачать pdf-файл программы конференции.

Устные доклады | Стендовые доклады

ICMNE-2007 AND SYMPOSIUM QI-2007 SCIENTIFIC PROGRAM

(Final Edition)
(Posters)

Download files:
ICMNE-2007 Oral Presentations
ICMNE-2007 Posters
ICMNE-2007 Delayed Posters
QI-2007 Oral Presentations

Monday, October 1st , 2007
9.00 — …	Registration & Accommodation
13.00 — 14.00	Lunch
Conference hall Special Session. Presentations of Hi-Tech Companies.
16.00	S1-1	NANOFABS – basic systems for new developments in the field of nanoelectronics & micro-, nanomechanics. V.A. Bykov, V.V. Kotov, V.V. Polyakov, V. Atepalikhin. NT-MDT Company, Moscow , Russia .
16.30	S1-2	The future of nano technology based on electron microscopy. Uwe Schubert. Nano Technology Systems Division Carl Zeiss SMT AG
17.00	S1-3	The inspection of SEM into the third dimension. Peter Gnauck. Nano Technology Systems Division Carl Zeiss SMT AG
17.30	S1-4	Will be announced later
18.00	Welcome Party
19.00	Dinner
Tuesday, October 2nd , 2007
Conference hall
8.00	Breakfast
8.40	Welcome remarks E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow K.A. Valiev, Program Chair, IPT RAS, Moscow
Plenary Session Session Chairman: Alexander Orlikovsky, Institute of Physics &Technology RAS, Russia
8.50	L1-01	KEYNOTE: Materials and MOS device architectures for the sub-32 nm node. Th. Skotnicki and S. Monfray. ST Microelectronics, Crolles , France
9.30	L1-02	INVITED: High-k dielectric films for advanced microelectronics. A. Toriumi. University of Tokyo , Japan
10.10	L1-03	INVITED: Low-k dielectrics for microelectronics. M. Baklanov . IMEC, Leuven , Belgium .
10.40	L1-04	INVITED: Bottom-up interconnect formation possibility using supercritical fluids: beyond scalability. E. Kondoh. University of Yamanashi, Japan.
11.10	L1-05	INVITED: Physics and Applications of Graphene. K.S. Novoselov 1 , S.V. Morozov 2 , A.K. Geim. 1. School of Physics and Astronomy, University of Manchester , Manchester , UK 2. Institute for Microelectronics Technology, Chernogolovka , Russia
11.40 — 12.00	Coffee break. Winter garden
Conference Hall Session 1. Sub-100 nm Lithography Session Chairman: Kamil Valiev, Institute of Physics &Technology RAS, Russia
12.00	O1-01	Manufacturing and investigation of objective lens for ultrahigh resolution lithography facilities. *N. Chkhalo, E. Kluenkov, A. Pestov, D. Raskin, N. Salashchenko.* Institute for Physics of Microstructures, RAS, Nizhny Novgorod , Russia
12.20	O1-02	Multilayer Zr/Si filters for EUV lithography and for radiation source metrology. *M.S. Bibishkin 1 , N.I. Chkhalo 1 , S.A. Gusev 1 , E.B. Kluenkov 1 , A.Ja. Lopatin 1 , V.I. Luchin 1 , A.E. Pestov 1 , N.N. Salashchenko 1 , L.A. Shmaenok 2 , N.N. Tsybin 1 .* 1. Institute for Physics of Microstructures, RAS, Nizhny Novgorod , Russia . 2. PhysTeX, Vaals , Netherlands
12.40	O1-03	Alternating Phase Shift Mask design problem statement. M. Myachin 1 , N. Savinski 2 , G. Krasnikov , 3 N. Shelepin 3 , O. Gutshin 3 , I. Sirtsov 3 , A. Sutyagin 3 . 1. Yaroslavl State University , Yaroslavl , Russia 2. Institute of Physics &Technology, RAS, Yaroslavl Branch , Russia , 3. JSC Mikron , Zelenograd, Moscow
13.00	O1-04	Modification of nanolithography method using optical tweezers for planar nanostructures fabrication. *I.V. Soboleva, A.G. Zhdanov, A.A. Fedyanin.* Faculty of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia
Auditorium A Session 2. Simulation and Modeling I Session Chairman: Tariel Makhviladze, Institute of Physics &Technology RAS, Russia
12.00	L1-06	INVITED: New Results of Modeling in Micro- and Nanoelectronics. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 2 . 1. Institute for Problems in Mechanics, RAS, Moscow , Russia . 2. Institute of Physics and Technology, RAS, Moscow , Russia
12.30	O1-05	The process window TCAD methodology for DFM in the field of deep submicron nodes and nanoscale transistors. *Y. Chaplygin, M. Korolev, T. Krupkina.* Moscow Institute of Electronic Engineering, Moscow , Russia
12.50	O1-06	The TCAD estimation of electrical stability for different layout SOI MOSFETs. *T. Krupkina.* Moscow Institute of Electronic Engineering, Moscow , Russia
13.10	O1-07	Technology modelling of microsystem technics devices. A. Kozlov, D. Rodionov. Moscow Institute of Electronic Technology, Moscow , Zelenograd , Russia
Auditorium B Session 3. Defects and Impurities in Semiconductors Session Chairman: Eugene Yakimov, Institute of Microelectronics Technology , Russia
12.00	O1-08	Spatial distribution of electrically active defects in strained-Si / SiGe / Si heterostructures. *N. Yarykin 1 , E. Yakimov 1 , G. Rozgonyi 2 .* 1. Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia . 2. Department of Materials Science and Engineering, North Carolina State University , Raleigh , NC , USA
12.20	O1-09	Stable silicon resistors at 20-160 ° C due to divacancy involving in high purity neutron doped Si. G.N. Kamaev, M.D. Efremov, V.A. Stuchinsky, B.I. Mihailov, S.G. Kurkin. Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia
12.40	O1-10	Application of SQUID for detection of a small quantity of spin impurity in semiconductors. A.I. Golovashkin 1 , A.L. Karuzskiy 1 , A.A. Orlikovsky 2 , V.V. Privezentsev 2 , A.M. Tshovrebov 1 . 1. Lebedev Physical Institute, Russian Academy of Science , Moscow , Russia ; 2. Institute of Physics & Technology, Russian Academy of Science , Moscow , Russia
13.00	O1-11	Determination of isotope ratio of boron in B-alloyed crystals of diamond by SIMS. A.N. Pustovit 1 , E.A. Ekimov 2 , I.I. Vlasov 3 , A.F. Vyatkin 1 . 1. Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia . 2. Vereshchagin Institute for High Pressure Physics, RAS, Troitsk, Moscow region, Russia . 3. General Physics Institute, RAS, Moscow , Russia
13.30 — 14.30	Lunch
Conference Hall Session 4. Nanodevices and Nanostructures I Session Chairman: Oleg Pchelyakov, Institute of Semiconductor Physics SB RAS, Russia
14.30	O1-12	From molecularly to atomically thin solid nanoshells: fabrication, properties and applications. V.Ya. Prinz, V.A. Seleznev, S.V. Golod. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
14.50	O1-13	Fabrication of nanostructures for stamps production used in nanoimprint lithography by means of focused ion beam technique. A.F. Vyatkin 1 , Yu. *A. Agafonov 1 , V.I. Zinenko 1 , Yu. M. Lunin 1 , B.G. Freikman 1 , V.I. Balykin 2 , P.N. Melent’ev 2* . 1. Institute of Microelectronics Technology, RAS, Moscow district, Chernogolovka, Russia . 2. .Institute of spectroscopy, RAS, Moscow district, Troitsk
15.10	O1-14	Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon. *V. Sverdlov 1,2 , H. Kosina 1 , and S. Selberherr 1 .* 1. Institute for Microelectronics, TU Wien, Wien , Austria . 2. V.A. Fock Institute of Physics, State University of St.Petersburg , St.Petersburg , Russia
15.30	O1-15	Graphene Nanoelectronics: Device Electrostatics and Kinetics. *G. I. Zebrev.* Department of Microelectronics, Moscow Engineering Physics Institute, Russia
15.50	O1-16	Quantum Conductivity of Linear Chain Carbon. M.B. Guseva, V.G. Babaev , N.D. Novikov, V.V. Khvostov. Department of Physics, Moscow State University , Moscow , Russia
Auditorium A Session 5. MEMS & Sensors Session Chairman: Vladimir Lukichev, Institute of Physics &Technology RAS, Russia
14.30	O1-17	Divergence Instability o f a Extensible Microplate Subjected to Nonlinear Electrostatic Pressure. *Gh. Rezazadeh 1 , H. Yagubizade 1 , Y. Alizadeh 2* . 1. Mech. Eng. Dept., Urmia University , Urmia , Iran . 2. Mech. Eng. Dept., Arak Azad University , Arak , Iran
14.50	O1-18	Simulation, formation and dynamic characteristics of e lectrostatically actuated switches . A.V. Postnikov 1 , I.I. Amirov 1 , V.V. Naumov 1 , V.A. Kalnov 2 . 1. Institute of microelectronics, Russian Academy of Science, Yaroslavl, Russia 2. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
15.10	O1-19	High energy microelecromechanical oscillator based on the electrostatic microactuator. *I. Baginsky, E. Kostsov , V. Sobolev.* Institute of Automation and Electrometry, SB RAS, Novosibirsk , Russia
15.30	O1-20	Application of single crystals of lithium niobate with bidomain structure for creation actuators of micro and nano moving ranges. V.Antipov, A.Bykov, M.Malinkovich 1 , Y.Parkhomenko. Moscow Institute Of Steel And Alloys (Technological University), Moscow , Russia
15.50	O1-21	Electromechanical energy conversion in the nanometer gaps. E.G. Kostsov. Institute of Automation and Electrometry, SB RAS, Novosibirsk , Russia
16.10	O1-22	Flicker-noise gas sensors as basis elements of microanalytical systems. *M. Makoviychuk.* Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
Auditorium B Session 6. Photonics and Optoelectronics Session Chairman: Sergey Nikitov, Institute of Radioengineering and Electronics RAS, Russia
14.30	O1-23	Distant- and interference-spatial spectroscopy of evanescent waves . **M.Yu. Barabanenkov, Yu.N. Barabanenkov , S.A. Nikitov.*** * Institute of Microelectronics Technology, RAS, Chernogolovka , Russia . Institute of Radioengineering and Electronics, RAS, Moscow , Russia
14.50	O1-24	Polarization switching dynamics of nonlinear ferroelectric photonic crystals. N.E. Sherstyuk 1 , E.D. Mishina 1 , V.M. Muhortov 2 . 1. Moscow State Institute of Radioenginering, Electronics and Automation, Moscow , Russia ; 2. South Scientific Center of Russian Academy of Science , Rostov-on-Don , Russia
15.10	O1-25	Magnetoplasmonic effects in two-dimensional photonic crystals. *A.G. Zhdanov 1 , T.V. Dolgova 1 , A.A. Fedyanin 1 , A.V. Baryshev 2 , A.B. Khanikaev 2 , H. Uchida 2 , and M. Inoue 2 .* 1. Dept. of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia 2. Dept. of Electrical and Electronic Eng. , Toyohashi University of Technology , Toyohashi , Japan
15.30	O1-26	Application of Ge- Si Nanostructures in Photovoltaic. *O.P. Pchelyakov.* Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia
15.50	O1-27	Red Channel Frequency-Contrast Characteristics Correction Method of the Matrix Photoreceiver Based on Simplified Design of the Photocells with Deep Color Separation. *I.V. Vanyushin 2 , A.V. Verhovtseva 2 , A.V. Gergel’ 1 , N.M. Gorshkova 1 , V.A. Zimoglyad 2 , Yu.I. Tishin 2 .* 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia . 2. “Unique IC`s”, LLC, Moscow, Russia
16.10	O1-28	SILAR Preparation of Charge Selective Contacts for Future Photovoltaics. *S. Gavrilov 1 , A. Zheleznyakova 1 , Th. Dittrich 2 , E. Poltoratsky 3 , A. Belogorokhov 4* 1. Moscow Institute of Electronic Technology, Moscow , Russia , 2. Hahn-Meitner Institut , Berlin , Germany , 3. State Research Institute of Physical Problems, Moscow , Russia , 4. Institute of Rare Metals, Moscow , Russia
16.30 — 17.00	Coffee break. Winter garden
Conference Hall Session 7. Devices and ICs Session Chairman: Andrey Vasiliev, FSU Enterprise “Pulsar”, Russia
17.00	O1-29	Physical Limitations of Reliability of Solid-State Microwave Elements at Micro- and Nanoelectronics. A. Vasiliev, V. Sinkevitch. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
17.20	O1-30	Sign magnetosensitivity of dual-collector lateral bipolar magnetotransistor. R.D. T ikhonov. SMC «Technological Centre» MIEE, Moscow — Zelenograd , Russia
17.40	O1-31	High speed integrated switchboards based on connected quantum wells. *B. Konoplev 1,2 , E. Ryndin 2 .* 1. Taganrog Institute of Technology — Southern Federal University , Taganrog , Russia . 2. Southern Scientific Center of Russian Academy of Sciences , Rostov-on-Don , Russia
18.00	O1-32	Self-heating influence on device interconnect temperature in high-voltage SOI MOSFET. А . Krasukov, E. Artamonova. Moscow State Insitute of Electronic Engineering, Moscow , Russia
18.20	O1-33	Microwave GaN Transistors: Achievements and Prospects. *A. Vasiliev, A. Dorofeev, Yu. Kolkovsky, V. Minnebaev.* Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
18.40	O1-34	Nanoionic supercapacitors for 0.5 V nanoelectronics. *A.L. Despotuli, A.V. Andreeva, V.V. Aristov.* Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
Auditorium A Session 8. Thin Films Session Chairman: Mikhail Baklanov, IMEC, Leuven , Belgium
17.00	O1-35	Electric Pulse Induced Resistance Change in Oxide Thin Film Heterostructures. A. Ignatiev, N.J. Wu , X. Chen, C. Papagianni, Y. B. Nian, J. Strozier. Texas Center for Advanced Materials, University of Houston , Houston , USA
17.20	O1-36	MBE growth of Ge-Si strained structures with the step buffer for two-dimensional electron gas. *L.V. Sokolov, Yu.B. Bolkhovitianov, and A.S. Derjabin.* Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
17.40	O1-37	Development of MBE technology of III-V semiconductor heterostructures for ultra-high frequency devices. *K. Zhuravlev, A. Toropov, V. Mansurov.* Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
18.00	O1-38	Surprising phase transformation of a-Si:H films under femtosecond laser impact. *V.A. Volodin 1,2 , M.D. Efremov 1 , G.A. Kachurin 1 , S.A. Kochubei 1 , A.G. Cherkov 1 , M. Deutschmann 3 , N. Baersch 3 .* 1 . Institute of Semiconductor P hysics SB RAS , Novosibirsk , Russi a . 2 . Novosibirsk State University , Novosibirsk , Russia . 3. Laser Zentrum Hannover, Hannover, Germany
18.20	O1-39	Deposition of ultrathin magnetic films by magnetron sputtering with RF bias on substrate. V.V. Naumov, V.F. Bochkarev, Ed.Yu. Buchin. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
18.40	O1-40	Emitting prop er ties of cobalt thin films reduced from oxide by proton irradiation. B. Gurovich, K. Prikhodko , A. Domantovsky, K. Maslakov. Russian Research Center «Kurchatov Institute», Moscow , Russia
Auditorium B Session 9. Superconducting Structures Session Chairman: Mikhail Kupriyanov, Institute of Nuclear Physics , Moscow State University , Russia
17.00	O1-41	Josephson effect in laterally inhomogeneous structures with ferromagnetic materials. T. Karminskaya 1 , M. Kupriyanov 1 , N.Pugach 2 . Institute of Nuclear Physics , Moscow State University , Moscow , Russia . 2. Physics Department of Moscow State University , Moscow , Russia
17.20	O1-42	Ferromagnetic nanodots as source of magnetic field: control transport properties of Josephson junctions and diluted magnetic semiconductor. *S.N. Vdovichev.* Institute for Physics of Microstructures, RAS, Nizhniy Novgorod , Russia
17.40	O1-43	High Linearity Josephson Array Structures. *V.K. Kornev 1 , I.I. Soloviev 1 , N.V. Klenov 1 , and O. A. Mukhanov 2 .* 1. Department of Physics, M.V. Moscow State University , Moscow , Russia . 2. HYPRES, Inc., Elmsford , NY , USA
18.00	O1-44	Full synchronization of arrays of high-Tc Josephson junctions. *A.M. Klushin 1,2 , M. He 1,3 , M.Yu. Levitchev 2 , V.A. Markelov 2 , V.V. Kurin 2 and N. Klein 1 .* 1. Institute for Bio- and Nanosystems and CNI-Centre of Nanoelectronic Systems for Information Technology Forschungszentrum Julich GmbH, Julich , Germany . 2. Institure for physics of microstructures, RAS, Nizhny Novgorod, Russia . 3 Dept. of Electronics, Nankai Univ. , Tianjin , P. R. China
18.20	O1-45	Fluctuations of the thin diffusive metal film under the influence of microwave radiation. I. Devyatov, M. Kupriyanov, D. Goncharov. Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow , Russia
18.40	O1-46	Out-of-plane tilted Josephson junctions of bi-epitaxial YBa 2 Cu 3 O x thin films. J.E. Mozhaeva 1 , P.B. Mozhaev 1 , J. Bindslev Hansen 2 , C.S. Jacobsen 2 , I.K. Bdikin 3 , I.M. Kotelyanskii 4 , V.A. Luzanov 4 , S.G. Zybtsev 4 . 1. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia . 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark . 3. CICECO, University of Aveiro , Aveiro , Portugal . 4. Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia
19.00	Dinner
Wednesday, October 3rd 2007
8.15	Breakfast
8.50	Welcome remarks K.A. Valiev. Institute of Physics and Technology, Russian Academy of Sciences.
Conference Hall Plenary Session of SYMPOSIUM QI-2007 Chairman: Y. Ozhigov
9.00	Q-01	Coulomb blockade of anyons in quantum antidots. D.V.Averin. Department of Physics and Astronomy, Stony Brook University, SUNY, Stony Brook, NY, USA
9.30	Q-02	Reversible logic circuits as prototypes of prospective quantum computers, V. Semenov, J. Ren and D. Averin, Stony Brook University, Department of Physics and Astronomy, Stony Brook, NY
10.00	Q-03	Single-qubit operations in the double-donor structure driven by optical and voltage pulses . A. V. Tsukanov . Institute of Physics and Technology, Russian Academy of Sciences
10.30	Coffee break
Conference Hall Session 10. Nanodevices and Nanostructures II Session Chairman: Alex Ignatiev, Texas Center for Advanced Materials, University of Houston , USA
10.50	L2-01	INVITED: New Trends in Development of Modern Silicon Nanoelectronics. I.G. Neizvestny. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
11.10	O2-01	SiGe heterostructures on insulator for CMOS transistors formed by interface mediated endotaxy. V.P. Popov 1 , I.E. Tyschenko 1 , A.G. Cherkov 1 , A.E. Klimov 1 , M. Volskow 2 . 1. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 2 . Institute of Ion Beam Physics and Material Research, Dresden , Germany
11.30	O2-02	Interacting resonances and electron density redistribution in resonant- tunneling heterostructures. A. A. Gorbatsevich 1 , V. V. Kapaev 2 , M. N. Zhuravlev 1 . 1. Moscow State Institute of Electronic Technology ( Technical University ), Moscow , Russia . 2. P.N. Lebedev Physical Institute, Moscow , Russia
11.50	O2-03	Memory Effect in Dielectrics with Inc orporated Nanosize Clusters. A.E. Berdnikov, A.A. Popov, A.A. Mironenko, V.D. Chernomordick. Institute of Physics &Technology RAS, Yaroslavl Branch , Russia
12.10	O2-04	Work function engineering of Ni-Si metal gates on HfO 2 high-? gate dielectrics as probed with in-situ XPS. A.V. Zenkevich, Yu.Yu. Lebedinskii, Yu.A. Matveev and V.N. Nevolin. Moscow Engineering Physics Institute (state university), Russia
12.30	O2-05	Using heterostructures for nanoscaled electronic devices in Novosibirsk Institute of Semiconductor Physics. *V.P. Popov, I.E. Tyschenko, A.V. Latyshev, V.A. Gaisler, I.G. Neizvestny, A.L. Aseev.* Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
Auditorium A SYMPOSIUM QI-2007 Chairman: A. Tsukanov
11.00	Q-04	Non-demolishing measurements of an electron spin state via Fano resonance . *L. Gorelik 1 , V. Vyurkov 2 , and A. Orlikovsky 2* 1. Chalmers University of Technology and Goteborg University, Goteborg, Sweden, 2. Institute of Physics and Technology, RAS, Moscow, Russia
11.20	Q-05	Relative coordinates of coherent electron pair. C. Usenko 1 , N. Cherkashyna 1 . National Taras Shevchenko University of Kyiv, Kyiv, Ukraine
11.40	Q-06	The Software for Quantum Mechanical Calculation of Electronic Structure of Molecules. A.G. Gasanov 1 , F.G. Pashaev 1 . 1. Baku State University, Baku, Azerbaijan
12.00	Q-07	Josephson-junction qubits . *N.V. Klenov, V.K. Kornev, N. G. Pugach, T.S. Rumyantseva.* Department of Physics, Moscow State University, Moscow, Russia
12.20	Q-08	Simulation of Quantum Algorithms with high-level language. Mathematica. *P.Nyman .* International Center for mathematical Modeling in physics, Engineering and Cognitive science, MSI, Vaxjo University, Sweden
12.40	Q-09	Geometric information in eight dimensions vs. quantum information. V.I. Tarkhanov 1 , M.M. Nesterov 2 . 1. St. Petersburg State Polytechnic University, St. Petersburg, Russia. 2. St. Petersburg Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia
Auditorium B Session 11. Magnetic Micro- and Nanostructures Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS, Russia
11.00	O2-06	Non-equilibrium magnetism of nanoparticles revealed in ‘static’ and radiofrequency measurements. M.A. Chuev, N.P. Aksenova, P.G. Medvedev. Institute of Physics and Technology, RAS, Moscow , Russia
11.20	O2-07	Peculiarities of the extraordinary Hall effect for planar arrays Fe nanoparticles embedded in an ultrathin Pt film. V.T. Volkov, V. I. Levashov, V. N. Matveev and V. A. Berezin. Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia
11.40	O2-08	Inhomogeneously magnetization of magnonic ferrite film measurement using magnetooptical Kerr effect. A. Klimov, S. Nikitov. Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia
12.00	O2-09	Finite size effects in antiferromagnetic multilayers. *V.V. Kostyuchenko 1 , M.V. Kostyuchenko 2 .* 1. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia 2. Yaroslavl State Technical University , Yaroslavl , Russia
12.20	O2-10	Magnetoresistance of ferromagnetic nanoconstrictions in planar configuration. *A.A. Bukharaev 1,2 , R.G. Gatiyatov 1 , P.A. Borodin 1* . 1. Zavoisky Physical Technical Institute, Russian Academy of Sciences , Kazan , Russia . 2. Kazan State University , Kazan , Russia
12.40	O2-11	Spin-flop effect in antiferromagnets induced by the spin-polarised current. *H. Gomonay, V. Loktev.* National Technical University «KPI», Kyiv, Ukraine
13.00	Lunch
Conference Hall Session 12. Plasma Physics and Technologies I Session Chairman: Dorel Toma, Tokyo Electron U.S. Holding
14.00	L2-02	INVITED: Dual (multi-) frequency capacitive coupled plasma (DF CCP) as an effective tool for nanotechnology. A.T. Rakhimov. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University (SINP MSU), Moscow , Russia
14.30	O2-12	A plasma etch process for bulk finFET manufacturing. *D. Shamiryan, A. Redolfi, W. Boullart.* IMEC, Leuven , Belgium
14.50	O2-13	Nanoscale etching processes. *A. Rubin, C. Welch.* Oxford Instruments Plasma Technology, Bristol , UK
15.10	O2-14	Plasma parameters and active particles kinetics in Cl 2 and HCl dc glow discharges. *A. Efremov , V. Svettsov.* Ivanovo State University of Chemistry & Technology, Ivanovo , Russia
15.30	O2-15	Theoretical study of ionization processes in BF 3 plasmas. *V.P. Kudrya.* Institute of Physics and Technology, RAS, Moscow , Russia
15.50	O2-16	Investigation of plasma uniformity in processing chambers of plasma tools for microelectronics by computer-aided tomography. *K. Rudenko , A. Fadeev, S. Averkin, M. Rudenko, I. Tyurin, A. Rylov, and A. Orlikovsky.* Institute of Physics and Technology, RAS, Moscow , Russia
Auditorium A SYMPOSIUM QI-2007 Chairman: Y.Bogdanov
14.00	Q-10	Diffusion approximation of quantum dynamics. Y.I. Ozhigov . Moscow State University, Moscow, Russia
14.30	Q-11	Numerical computations of molecular stationary states. B.K. Novosadov . Moscow State University
14.50	Q-12	What Fundamentally New Properties Are Introduced by Special Relativity to Quantum Cryptography , D.Pomozov, S.Molotkov , Institute of physics and technology RAS
15.10	Q-13	EPR — experiments: analysis of Bell inequalities violation A. Kraklauer, New York, USA
15.30	Q-14	An investigation of the antiferromagnet-based NMR quantum register in inhomogeneous magnetic field , A. Kokin. Institute of Physics and Technology, RAS
15.50	Q-15	Will be announced later
Auditorium B Session 13. Simulation and Modeling II Session Chairman: Tariel Makhviladze, Institute of Physics &Technology RAS, Russia
14.00	O2-17	Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths . A. Burenkov, C. Kampen, J. Lorenz, and H. Ryssel. Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen , Germany
14.20	O2-18	All-quantum simulation of an ultra-small SOI MOSFET. V. Vyurkov 1 , I. Semenikhin 1 , V. Lukichev 1 , A. Burenkov 2 , and A. Orlikovsky 1 . 1. Institute of Physics and Technology, RAS, Moscow , Russia . 2. Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen , Germany
14.40	O2-19	Modeling of non-stationary electron transport in semiconductor nanowires and carbon nanotubes. *D.V. Pozdnyakov, A.V. Borzdov, V.M. Borzdov, F.F. Komarov.* Belarus State University , Minsk , Belarus
15.00	O2-20	Simulation of metal and semiconductor single-electron 1D and 2D arrays. I.I. Abramov, A.L. Baranoff, A.M. Lavrinovich. Belarusian State University of Informatics and Radioelectronics, Minsk , Belarus
15.20	O2-21	Mathematical modeling of a GaAs integrated microwave limiter. *G.Z. Garber.* Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
15.40	O2-22	A Comparison of Fitness Function Schedules for Multi-Objective Univariate Marginal Distribution Optimization of Mixed Analog-Digital Signal Circuits. *L. Zinchenko , M. Radecker , F. Bisogno.* Fraunhofer IAIS, Sankt Augustin, Germany
16.10	Coffee break
16.30 Entresol POSTER SESSION I
Bottom hall. Exhibition
19.00	Dinner
Thursday, October 4th 2007
8.15	Breakfast
Conference Hall Session 14. Nanostructures Technologies I Session Chairman: Anatoly Dvurechenskii, Institute of Semiconductor Physics SB RAS, Russia
9.00	L3-01	INVITED: Silicon based quantum dot nanostructures: Physics and Technology. A.V. Dvurechenskii. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
9.30	O3-01	Method of creation of monomolecular transistor with “overhanging” electrodes. *I.V. Sapkov, E.S. Soldatov.* Department of Physics, M.V. Lomonosov Moscow State University , Russia
9.50	O3-02	Nanocrystal floating gate produced by CVD and thermal processing. A.G. Novikau 1 , P.I. Gaiduk 1 , E.N. Pshenichnij 2 , O.Yu. Nalivajko 2 , V.S. Malishev 2 and V.I. Plebanovich 2 . 1 . Belarusian State University , Minsk , Belarus , 2 . RPC Integral, Minsk , Belarus
10.10	O3-03	The electroformed open sandwich-structures as elements for crossbar-nanoelectronics. *V. Mordvintsev, S. Kudryavtsev V. Levin* . Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia
10.30	O3-04	Nanotechnology for fabricating full-epitaxial Nb-MgO-Nb tunnel junctions of sub-micron sizes. A. Chernych, G. Mikhailov, V. Vinnichenko. Institute of Microelectronics Technology & High Purity Materials, Russian Academy of Sciences , Chernogolovka, Moscow Region , Russia
Auditorium A SYMPOSIUM QI-2007 Chairman: B. Novosadov
9.00	Q-16	Quantum computation and hidden variables. V.V. Aristov and A.V. Nikulov, Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
9.20	Q-17	Generation of entangled states in quasi-periodical ferroelectrics, S. Kulik. Moscow State University, Moscow, Russia
9.40	Q-18	Limitations on ion trap quantum computing scheme . A. Burkov. Moscow State University, Moscow, Russia
10.00	Q-19	Has it been proved that a superconducting loop could be flux qubit? A.A. Burlakov, *V.L. Gurtovoi, A.V. Nikulov and V.A. Tulin.* Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
10.20	Q-20	Thermal entanglement in a case of two spin temperatures , M. Kutcherov Polytechnic Institute of Siberian Federal University
10.40	Q-21	Will be announced later
Auditorium B Session 15. Simulation and Modeling III Session Chairman: Igor Abramov, Belarusian State University of Informatics and Radioelectronics , Belarus
9.00	L3-02	INVITED: Focused ion beam source of a new type for micro- and nanoelectronics technologies. V.L. Varentsov. V.G.Khlopin Radium Institute, St. Petersburg , Russia
9.30	O3-05	New Approach in the Development of Low Noise Microwave Semiconductor Devices. *N.V. Alkeev 1 , S.V. Averin 1 , V.E. Lyubchenko 1 , A.A. Dorofeev 2* . 1. Institute of Radioengineering & Electronics, RAS , Fryazino, Moscow region, Russia . 2. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
9.50	O3-06	Two-band models of wave function formalism f о r resonant tunneling diodes. *I.I. Abramov,* *I.A. Goncharenko, N.V. Kolomejtseva, A.A. Shilov.* Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
10.10	O3-07	The prediction of nanostructure properties on the base of porous silicon. D. Bilenko, O. Belobrovaya, E. Jarkova, E. Khasina, I. Mysenko, D. Terin. Saratov State University , Saratov , Russia
10.30	O3-08	Simulation of feature profile evolution during the cyclic etching/ passivation process of deep plasma Si etching by the cell-string hybrid method. A.S. Shumilov, I.I. Amirov. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
11.00	Coffee break
Conference Hall Session 16. Nanostructures Technologies II Session Chairman: Vitalii Aristov, Institute of Microelectronics Technology RAS, Russia
11.30	O3-09	Influence of growth temperature and double-side doping on structural and electro-physical characteristics of the Al x Ga 1-x As/In y Ga 1-x As/GaAs nanosystem. I.A. Subbotin , G.B. Galiev ** , R.M. Imamov * , M.A. Chuev *** .* * Shubnikov Institute of Crystallography, RAS, Moscow , Russia . Institute of Ultra-High-Frequency Semiconductor Electronics, RAS, Moscow , Russia . * Institute of Physics and Technology, RAS, Moscow , Russia
11.50	O3-10	Model of diffusion limited aggregation for the effect of magnetic field on ion beam synthesis. *G.G. Gumarov, V. Yu. Petukhov.* Kazan Physical Technical Institute of Kazan Scientific Center, RAS, Kazan , Russia
12.10	O3-11	Heterogeneous melting and participation of it in different micro- and nanotechnology processes. *A.A. Buzdugan, S.A. Gavrilov, D.G. Gromov, E.N. Redichev, I.S. Chulkov.* Moscow Institute of Electronic Technology, Zelenograd , Russia
12.30	O3-12	Porous silicon the material for nano- and microstructurizations. *V. Starkov.* Institute of Microelectronics Tecnology, RAS, Chernogolovka , Russia
12.50	O3-13	The approach to formation of interconnections with the low dimension for damascene technology. *D.G. Gromov a , E.N .Redichev a , A.A. Golishnikov b , A.A. Buzdugan a , I.S. Chulkov a , R.M. Ammosov c* . a Moscow Institute of Electronic Technology ( Technical University ), Moscow , Zelenograd , Russia . b ”Technological Center” Research and Production Complex at MIET, Moscow , Zelenograd , Russia . c State Research Institute of Physical Problems, Moscow, Zelenograd, Russia
Auditorium A SYMPOSIUM QI-2007 Chairman: A. Burkov
11.30	Q-22	Explicit Attack on the Key in Quantum Cryptography) Reaching the Theoretical Error Limit 11%, A.Timofeev, S.Molotkov, Moscow State University
11.50	Q-23	Hidden variables in Bell model and dynamical chaos, Y.Bogdanov , Institute of physics and technology, Moscow, Russia
12.10	Q-24	New Time-Phase Coding Method in Quantum Cryptography , A.Makkaveev, S.P.Kulik , S.Molotkov , Institute of physics and technology
12.30	Q-25	3D-vortex labyrinth trapping in the near field of a solid-state microchip laser. *A.Yu. Okulov .* P.N.Lebedev Physical Institute of Russian Academy of Sciences Leninsky prospect 53, 119991 Moscow, Russia
12.50	Q-26	Hidden time hypothesis and “no — protocol theorem”. *P.V. Kurakin.* Moscow Institute of Physics and Technology, Moscow, Russia
Auditorium B Session 17. Micro- and Nanostructures Characterization I Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS, Russia
11.30	O3-14	Nanorelief elements in reference measures for scanning electron microscopy. S.A. Darznek 1 , M.N. Filippov 2 , V.B. Mityukhlyaev 1 , Yu.A. Novikov 3 , Yu.V. Ozerin 4 , A.V. Rakov 3 , P.A. Todua 1 . 1. Center for Surface and Vacuum Research, Moscow , Russia . 2. N.S. Kurnakov General and Inorganic Chemistry Institute, RAS , Moscow , Russia . 3. A.M. Prokhorov General Physics Institute, RAS , Moscow , Russia . 4. Mikron Corporation, Moscow , Russia
11.50	O3-15	Direct measurement of the linewidth of relief element on AFM in nanometer range. S.A. Darznek 1 , M.N. Filippov 2 , I.D. Lysov 1 , Yu.A. Novikov 3 , A.V. Rakov 3 , V.A. Sharonov 1 , P.A. Todua 1 . 1. Center for Surface and Vacuum Research, Moscow , Russia . 2. N.S. Kurnakov General and Inorganic Chemistry Institute, RAS , Moscow , Russia . 3. A.M. Prokhorov General Physics Institute, RAS , Moscow , Russia
12.10	O3-16	Generalized dynamical theory of X-rays diffraction by curved perfect crystals. *T. Chen.* Moscow State Academy of Fine Chemical Technology, Moscow , Russia
12.30	O3-17	The special features of Al x Ga 1-x N \ GaN heterostructures. K.L. Enisherlova 1 , R.M. Imamov 2 , I.A. Subbotin 2 , T.F. Rusak 1 , E.M. Temper 1 . 1. Federal state unitary enterprise «Science &Production enterprise «Pulsar», Moscow , Russia 2. Institute of Crystallography RAS, Moscow , Russia
12.50	O3-18	Characterization of Nanometer Structures for CMOS VLSIC Design Flow. D.Y. Adamov, Y.F. Adamov. LCC “Unique IC`s”, Moscow Russia
13.10	O3-19	Fundamental and applied aspects of flicker-noise spectroscopy. M. Makoviychuk. Institute of Physics and Technology of the RAS, Yaroslavl Branch, Yaroslavl , Russia
13.30	Lunch
Conference Hall Session 18. Plasma Physics and Technologies II Session Chairman: Dorel Toma, Tokyo Electron U.S. Holding
14.20	L3-03	*INVITED: Plasma etching of high aspect ratio structures: from complex chemistry to Bosh processing. V. Lukichev 1 , V. Yunkin 2* .** 1. Institute of Physics and Technology, RAS, Moscow , Russia . 2. Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia
14.50	O3-20	Plasma Si etching processes for microsystem technology. I.I. Amirov1, O.V. Morozov1, M.O. Izuimov1, B.A. Kalnov2, A.A. Orlikovsky2, K.A. Valiev2. 1. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia
15.10	O3-21	Dry processes for formation of suspended Si bulk structures. O. V. Morozov 1 , A.V. Postnikov 1 , I.I. Amirov 1 , V.A. Kalnov 2 . 1. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia . 2.Institute of Physics and Technology RAS, Moscow , Russia .
15.30	O3-22	Reactive sputtering of metal targets: influence of reactive atoms implantation. V.A. Marchenko. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
15.50	O3-23	Investigation of impurity composition of atomic hydrogen beam formed by a low-pressure arc-discharge source. V.A. Kagadei , D.I. Proskurovski, and S.V. Romanenko. High Current Electronics Institute, SB RAS, Tomsk , Russia
16.10	O3-24	Langmuir-Probe applications in monitoring of plasma etching. *A.V. Miakonkikh , K.V. Rudenko and A.A. Orlikovsky.* Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
Auditorium A SYMPOSIUM QI-2007
14.20	Q-27	Problem of detection of Rydberg atoms and quantum information processing, I.Riabtsev, D.Tretiakov, I.Beterov, V.Entin, Institute semiconductor physics, Siberian Dep.RAS
14.40	Q-28	Quantum registers on the basis of inhomogeneous chains of nuclear spins, E. B. Fel’dman, Institute of Problems of Chemical Physics of RAS
15.00	Q-29	Thermal pairwise entanglement in an inhomogeneous magnetic field , E. B. Fel’dman, A. N. Pyrkov, Institute of Problems of Chemical Physics of RAS, 142432, Chernogolovka, Moscow
15.20	Q-30	Single molecule implantation as alternative of single atom (ion) implantation for Quantum Computer development , V. Zhukov, V. Maslov, Inst. of informatics nd automation, RAS
15.40	Q-31	Prequantum model with classical fields as hidden variables. *A. Khrennikov.* Univ. Vaxjo, Sweden
16.00	Q-32	Fair Sampling and Rotational Invariance in EPR experiments, G. Adenier, A. Khrennikov, Vaxjo University
16.20	Q-33	Will be announced later
Auditorium B Session 19. Micro- and Nanostructures Characterization II Session Chairman: Akira Toriumi, University of Tokyo , Japan
14.20	O3-25	Photolumenescence from the nanosized Si fabricated by modified PVD process. A.F. Alexandrov 1 , S-K. Koh 2 , E.A. Kralkina 1 , J.H. Lee 2 , N.E. Maslova 1 , V.B. Pavlov 1 , V.P. Savinov 1 , V.Yu. Timoshenko 1 , K.V. Vavilin 1 . 1. Physical faculty of M.V. Lomonosov Moscow State University, Moscow Russia . 2. P&I Corporation, Seoul , S.Korea
14.40	O3-26	Luminescence of the intrinsic and extrinsic defects in hafnia films . *A.A* Rastorguev 1 , V.I. Belyi 1 , T.P. Smirnova, L.V. Yakovkina 1 , V.A. Gritsenko 2 , M.V. Zamorynskaya 3 , H. Wong 4 . 1. Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk , Russia . 2. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 3. Ioffe Physicotechnical Institute, RAS, St. Petersburg , Russia . 4. Electronic Engineering Department, City University of Hong Kong
15.00	O3-27	Chemical Vapor Deposition and characterization of HfO 2 /Si composition. T.P. Smirnova 1 , F.A. Kuznetsov 1 , V.V. Kaichev 2 , S.A. Beloshapkin 3 , V.I. Kosyakov 1 , L.V. Yakovkina 1 , M.S. Lebedev 1 . 1. Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk , Russia . 2. Boreskov Institute of Catalysis, SB RAS, Novosibirsk , Russia . 3 . Materials and Surface Science Institute, Limerick , Ireland
15.20	O3-28	Falling down capacitance impedance under light illumination of MDS-structures with three-layer SiN x dielectrics. S.A. Arzhannikova 1, a , M.D. Efremov 1,b , A.A. Voschenkov 1 , V.A. Volodin 1 , G.N. Kamaev 1 , D.V. Marin 1 , V.S. Shevchuk 1 S.A. Kochubei 1 , A.A. Popov 2 , Yu.A. Minakov 2 . 1. Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia 2. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
15.40	O3-29	Al x GaN\GaN structure diagnostic by C-V characteristics method. *K.L. Enisherlova, I.B. Gulyaev, V.G. Goryachev, A.U. Dorofeev, E.M. Temper, N.B. Gladisheva.* Federal state unitary enterprise «Science &Production enterprise «Pulsar», Moscow , Russia
16.00	O3-30	CVD Diamond with Electron Conductivity. The New Data on f.c.c. Carbon. M . B . Guseva , V . G . Babaev , V . V . Khvostov , I . Yu . Koniashin , Yu . A . Korobov , N . D . Novikov . Department of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia
16.20	Coffee break
16.30 Entresol. POSTER SESSION II
Bottom hall. Exhibition
19.30	Banquet
Friday, October 5th , 2007
9.00	Breakfast
10.00	Departure

admin-icmne (Page 2)

Monday, October 1st, 2012

Conference Hall

Tuesday, October 2nd, 2012

Conference Hall

Conference Hall

Conference Hall

Auditorium A

Auditorium B

Conference Hall

Auditorium A

Auditorium B

Wednesday, October 3rd 2012

Conference Hall

Conference Hall

Auditorium A

Auditorium B

Conference Hall

Auditorium A

Auditorium B

Bottom hall. EXHIBITION

Thursday, October 4th 2012

Conference Hall

Auditorium A

Auditorium B

Conference Hall

Auditorium A

Auditorium B

Conference Hall

Auditorium A

Auditorium B

Bottom hall. EXHIBITION

Friday, October 5th, 2012

Wednesday, October 7th 2009

Nanodevices and Nanostructures

Nanostructure Technologies

Devices and ICs

Superconducting Structures and Devices

Photonics and Optoelectronics

Magnetic Micro- and Nanostructures

Delayed Posters at Session I

Thursday, October 8th 2009

Simulation and Modeling

Thin Films Technologies

Lithography Techniques

Ion and Neutral Beam Processing

Plasma Processing

Micro- and Nanostructure Characterization

Delayed Posters at Session II

Monday, October 5th, 2009

Conference hall

Tuesday, October 6th, 2009

Plenary Session I

Conference Hall

Auditorium A

Auditorium B

Conference Hall

Auditorium A

Auditorium B

Conference Hall

Auditorium A

Auditorium B

Wednesday, October 7th 2009

Conference hall

Conference Hall

Auditorium A

Conference hall

Auditorium A

Auditorium B

Thursday, October 8th 2009

Conference hall

Auditorium A

Auditorium B

Conference hall

Auditorium A

Auditorium B

Conference hall

Auditorium A

Auditorium B

Bottom hall. EXHIBITION

Monday, October 1^st, 2012

Tuesday, October 2^nd, 2012

Wednesday, October 3^rd 2012

Thursday, October 4^th 2012

Friday, October 5^th, 2012