Oral Presentations | Posters

Download in Microwoft Word format (.doc, 300 KB)

Monday, October 1st, 2012

9.00 — Registration & Accommodation

13.00-14.00 Lunch

Conference Hall

Special Session. Presentations of Hi-Tech Companies

16.00

S1-01

SemiTEq technological equipment for nanoelectronics . S.I. Petrov1, A.N. Alexeev1, D.M. Krasovitsky2, V.P. Chaly21. SemiTEq JSC, Saint-Petersburg, Russia. 2. Svetlana-Rost JSC, Saint-Petersburg, Russia.

16.20

S1-02

Structural diagnostics, elemental and characteristic analysis of modern micro- and nanosystems using analytical SEM/FIB tools A. Tagachenkov1, E. Zenova1, Y. Anufriev1, V. Dubrovinskiy2 1. Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences, Moscow, Russia. 2. JSC «NPO Sernia», Moscow, Russia .

16.40

S1-03

Ultra High Resolution AFM Imaging . M. MininINTERTECH Corp., Moscow, Russia.

17.00

S1-04

Oxford Instruments Plasma Technology equipment for the micro- and nano- engineering of materials for semiconductor, optoelectronics, MEMS and other applications K. Kuvaev, A. KryninTechnoinfo Limited, Moscow, Russia.

17.20

S1-05

Novel Vion Plasma FIB system for nano- and micro- electronics application by FEI Company . A. Poletaev, I. BredikhinTechnoinfo Limited, Moscow, Russia.

17.40

S1-06

Modern semiconductor equipment for metrology and failure analysis by Hitachi High Technologies . E. Kremer JSC InterLab, Moscow, Russia .

18.00 Welcome Party

19.00 Dinner

Tuesday, October 2nd, 2012

8.15 Breakfast

Conference Hall

8.50. WELCOME REMARKS

E.P. Velikhov, Conference Chair, RSC «Kurchatov Institute», Moscow

A.A. Orlikovsky, Program Committee Chair, IPT RAS, Moscow

 

Plenary Session I

Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia

9.00

L1-01

INVITED: New materials and structures in future ULSI generation . A. Orlikovsky, V. Vyurkov Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia .

9.40

L1-02

INVITED: New devices and materials for ultra low power operation F. Balestra Sinano Institute, IMEP-Minatec (CNRS-Grenoble INP, UJF), France .

10.20

L1-03

INVITED: SiGe and Ge: selective epitaxial growth and application in advanced MOS devices. A. Hikavyy, B. Vincent, W. Vanherle, J. Dekoster, L. Witters, H. Bender, A. Thean, R. Loo. IMEC, Leuven, Belgium.

11.00

L1-04

INVITED: Bumpless interconnects technology for wafer-based three-dimensional integration (3DI). T. OhbaInstitute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo.

11.40-12.00 Coffee break. Winter garden

Conference Hall

Plenary Session II. Quantum Informatics I

Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia

12.00

qL-01

INVITED: Dressed state amplification by a superconducting qubit. G. Oelsnera, P. MachaaE. Ilicheva, U. Huebnera, H.-G. Meyera, M. Grajcarb, O. Astafievca Institute of Photonic Technology, Jena, Germany. bDepartment of Experimental Physics, Comenius University, Bratislava, Slovakia, cNEC Nano Electronics Research Laboratories. Tsukuba, Ibaraki, Japan .

12.30

qL-02

INVITED: Quantum correlations: entanglement and discord in the simplest physical systems. E.B. Fel’dman, E.I. Kuznetsova, M.A. Yurishchev, A.I. Zenchuk. Institute of Problems of Chemical Physics, Chernogolovka, Russia .

13.00

qL-03

INVITED: Fingerprinting based algorithms for quantum branching programs. F. Ablayev1,21. Institute for Informatics of Tatarstan Academy of Sciences, Kazan, Russia. 2. Kazan Federal University, Kazan, Russia .

13.30

qL-04

INVITED: Mathematical modeling of quantum noise and the quality of hardware components of quantum computers. Yu.I. Bogdanov 1 , A.Yu. Chernyavskiy1, A.S. Holevo2, V.F. Luckichev1, S.A. Nuyanzin1,3, A.A. Orlikovsky 11 Institute of Physics and Technology, Russian Academy of Sciences. 2 Steklov Mathematical Institute, Russian Academy of Sciences. 3 National Research University of Electronic Technology MIET .

 

14.00-14.40 Lunch

Conference Hall

Session 1. Micro- and Nanodevices I

Session Chairman: Vladimir Vuyrkov, Institute of Physics and Technology, RAS, Russia

14.40

O1-01

INVITED: Qualification of deep-submicron OTP poly-fuse memory. N. Belova 1 , D. Allman1, S. Tibbitts2 . 1. ON Semiconductor, Phoenix, AZ, USA. 2. Jet City Electronics Inc., Seattle, WA, USA.

15.10

O1-02

Recording of information in nanostructures of transition metal silicides . A.S. Sigov1, B.M. Darinskiy3, L.A. Bityutskaya2, O.V.Ovchinnikov2, M.S.Smirnov2, M.V.Grechkina2, A.P.Lazarev3, G.A.Veligura4, A.V.Tuchin3, E.V.Bogatikov 3 1. MIREA,Moscow, Russia. 2. VSU, Voronezh, Russia. 3. Rosbiokvant Ltd., Voronezh, Russia. 4. Scientific Research Institute of Electronic Engineering, Voronezh, Russia .

15.30

O1-03

Study of the resistive switching mechanism in Pt/ZrOx/HfO2/p++-Si stacks by hard X-ray photoelectron spectroscopy Yu. Matveyev 1 , A. Zenkevich1, Yu. Lebedinskii1, S. Thiess2, W. Drube2 1. NRNU «Moscow Engineering Physics Institute», Moscow, Russia. 2. Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany.

15.50

O1-04

Switching of domains in ferroelectric domain boundary. B.M. Darinskiy1, A.P. Lazarev2, A.S. Sigov31. VSU, Voronezh, Russia. 2. Rosbiokvant Ltd., Voronezh, Russia. 3. MIREA, Moscow, Russia .

 

Auditorium A

Session 2. Quantum Informatics II

Session Chairman: Sergey Kulik, Moscow State University, Russia

14.40

q1-01

Quantum correlations (entanglement, discord), quantum phase transitions, and magnetic toroidal states in an anti-ferromagnetic XXZ chain of spins S= ? in the presence of an inhomogeneous transverse magnetic field. A.A. Kokin Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

15.10

q1-02

INVITED: Quantum and classical correlations in high temperature dynamics of two coupled large spins. V.E. ZobovL.V. Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, Russia .

15.40

q1-03

Quantum computer on multi-atomic ensembles in quantum electrodynamic cavity. F.M. Ablayev 1,2 , S.N. Andrianov 1,2,3 , S.A. Moiseev 1,2,3 , A.V. Vasiliev 1,2 1. Institute for Informatics of Tatarstan Academy of Sciences, Kazan, Russia. 2. Kazan Federal University, Kazan, Russia. 3. Kazan Physical and Technical Institute, Kazan, Russia

16.00

q1-04

Quantum addressing in photon echo based quantum random access memory S.A. Moiseev 1,2 , E.S. Moiseev2 . 1. Kazan Physical-technical Institute of Russian Academy of Sciences, Kazan, Russia. 2. Kazan Federal University, Kazan, Russia .

 

 

Auditorium B

Session 3. Simulation and Modeling I

Session Chairman: Igor Abramov. Belarus State University of Informatics and Radioelectronics, Minsk, Belarus

14.40

O1-05

T heoretical study of terahertz plasma instability in asymmetric double-grating-gate transistor structures A. Satou 1 H. Shida1 T. Otsuji1, V.V. Popov2 . 1. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan. 2. Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences, Saratov, Russia .

1 5. 00

O1-06

Voltage-controlled surface plasmon-polaritons in double-graphene structures D. Svintsov1 , I. Semenikhin1, V. Vyurkov1, V. Ryzhii2, T. Otsuji2 . 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. 2. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan .

15.20

O1-07

Advanced impact ionization current model for MOS devices including heat effects T. Krupkina, D. Rodionov National Research University ‘MIET’ , Moscow, Russia .

15.40

O1-08

Electric instability in GaAs/AlxGa1-xAs superlattices with barrier layers non-transparent for tunneling. V. Gergel` 1 , G.Galiev1, E. Il`ichev2, A. Verhovtseva1, N. Gorshkova1, A. Zelenyi1, I. Altu ê hov1, S. Paprotskiy1 1. Kotel`nikov Institute of Radio Engineering, RAS, Moscow, Russia. 2. National Research University of Electronic Technology (MIET), Moscow, Russia .

16.00

O1-09

Ionization energy oscillations in metallic and semiconducting nanotubes of ultra small diameters. A. Ganin, E. Bormontov, L. Bitytskaya Voronezh State University, Voronezh, Russia .

16. 20

O1-10

The brain is a nanoelectronic object. I.I. AbramovBelarusian State University of Informatics and Radioelectronics, Minsk, Belarus .

16.40-17.00 Coffee break. Winter garden.

 

Conference Hall

Session 4. Superconducting Structures and Devices

Session Chairman: Mikhail Kupriyanov, Skobelitsin Institute of Nuclear Physics, Lomonosov Moscow State University, Russia

17 .00

O1-11

Boundary conditions for the contact between normal metal and multiband superconductors with unusual types of pairing I. Devyatov, A. Burmistrova Lomonosov Moscow State University, Skobeltsin Institute of Nuclear Physics, Moscow, Russia .

17.20

O1-12

New method for calculation of the electron transport in heterostructures with different unusual types of superconducting pairing A. Burmistrova, I. Devyatov Lomonosov Moscow State University, Skobeltsin Institute of Nuclear Physics, Moscow, Russia .

17.40

O1-13

Superconducting quantum arrays as electrically small antennas I. Soloviev 1 , N. Kolotinsky2, N. Klenov2, A. Sharafiev2, V. Kornev2, O. Mukhanov3 1. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 2. Physics Department, Moscow State University. 3. HYPRES, Inc., Elmsford, USA .

18.00

O1-14

Combined magnetic field sensor with superconductive magnetic field concentrator. L.P. IchkitidzeNational Research University of Electronic Technology «MIET», MIET, Zelenograd, Moscow, Russia .

18.20

O1-15

Comparative parameters of superconductor-based sensors of weak magnetic fields. L.P. Ichkitidze1, M.L. Gavryushina21. National Research University of Electronic Technology «MIET», Zelenograd, Russia. 2. Bazovye Technologii JSC, Moscow, Russia .

 

Auditorium A

Session 5. Quantum Informatics III

 

Session Chairman: Sergey Moiseev, Kazan Physical and Technical Institute, RAS, Kazan, Russia

17.00

q1-05

INVITED: Spatial structure of two-photon and thermal light. S.P. Kulik, S.S. Straupe, I. Bobrov. Faculty of Physics, Moscow M.V. Lomonosov State University, Moscow, Russia .

17.30

q1-06

Biphoton spectrum control N. Borschevskaya1, I. Dyakonov1K. Katamadze1,2, S. Kulik1, A. Paterova 1 1. Moscow State University, Moscow, Russia, 2. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia .

17.50

q1-07

Quantization effects observed in asymmetric rings. V.L. Gurtovoi, A.I. Ilin, A.V. Nikulov, V.A. Tulin . Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow District, Russia .

18.10

q1-08

Quantum communication with Bose-Einstein condensates A.N. Pyrkov , T. Byrnes National Institute of Informatics, Tokyo, Japan .

18.30

q1-09

Effect of image charges on a space qubit evolutionV. Vyurkov, M. Rudenko, S. Filippov. Institute of Physics and Technology, RAS, Moscow, Russia .

 

Auditorium B

Session 6. Simulation and Modeling II

Session Chairman: Vladimir Vuyrkov, Institute of Physics and Technology, RAS, Russia

17.00

O1-16

A dynamic simulation model for functionally-integrated injection laser-modulator. B. Konoplev1E. Ryndin2, M. Denisenko11. Taganrog Institute of Technology — Southern Federal University, Taganrog, Russia. 2. Souther Scientific Center of RAS, Rostov-na-Donu, Russia .

17.20

O1-17

Computationally efficient methods for optical simulation of solar cells and their applications. M. Zanuccoli1, I. Semenikhin2, V. Vyurkov2, E. Sangiorgi1, C. Fiegna11. ARCES-DEI University of Bologna & IUNET, Cesena (FC), Italy. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

17.40

O1-18

Optical absorption of silicon layer with incorporated nano-voids and metal nanoparticles V. ShautsovaP. Gaiduk . Belarusian State University, Minsk, Belarus.

18.00

O1-19

Simulation of resonant tunneling devices based on different materials . I.I. Abramov, N.V. Kolomejtseva, I.A. Romanova, A.G. KlimovichBelarusian State University of Informatics and Radioelectronics, Minsk, Belarus.

18.20

O1-20

Electronic structure of magnetic nanoclusters of cobalt and nickel silicides. A. Tuchin 1, L. Bityutskaya1, A. Lazarev2, A. Sigov31. Voronezh State University, Voronezh, Russia. 2. «Rosbiokvant» Ltd.,Voronezh, Russia. 3. MIREA, Moscow, Russia .

 

19.00 Dinner

 

Wednesday, October 3rd 2012

8.15 Breakfast

 

Conference Hall

Plenary Session III

Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia

09.00

L2-01

INVITED: Graphene-based infrared and terahertz detectors: Concepts, features, and comparison V. Ryzhii 1 , T. Otsuji1, M. Ryzhii2, V. Mitin3, M.S. Shur4 . 1 Tohoku University, Sendai, Japan. 2 University of Aizu, Aizu-Wakamatsu, Japan. University at Buffalo, SUNY, Buffalo, USA, 4 Rensselaer Polytechnic Institute, Troy, USA .

09.40

L2-02

INVITED: Terahertz-wave generation using graphene — toward the creation of graphene injection lasers T. Otsuji 1 , A. Satou1, S.A. Boubanga Tombet1, M. Ryzhii2, V. Ryzhii11. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan. 2. Computational Nano-Electronics Laboratory, University of Aizu, Japan .

10.20

L2-03

INVITED: Perspective applications for 3C-SiC on silicon technology. F. Iacopi, L. Wang, G. Walker, L. Hold, B. Cunning, J. Han, P. Tanner, A. Iacopi, S. Dimitrijev. Queensland Micro and Nanotechnology Facility, Griffith University, Australia .

 

11.00 — 11.20 Coffee break

 

Conference Hall

Session 7. Advanced Lithography

Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia

11.20

O2-01

INVITED: Carbone nanotubes and nanostructures ? multifunctional materials for emission electronics. Yu.V. GulyaevKotel’nikov Institute of Radio Engineering and Electronics, RAS, Russia.

11.50

O2-02

INVITED: Research activity in field of Projection XEUV Lithography in IPM RAS. N.N. Salashchenko, N.I. Chkhalo. Institute for Physics of Microstructures, RAS, Russia .

12.20

O2-03

Next Generation Lithography — fundamental problems S.I. Zaitsev IMT RAS, Chernogolovka, Russia .

12.40

O2-04

NANOMAKER — the electron lithography tool for ultimate resolution. B.N. Gaifullin1, I.S. Stepanov1, A.A. Svintsov2, S.I. Zaitsev21. Interface Ltd, Moscow, Russia. 2. Institute of Microelectronics Technology, RAS , Chernogolovka, Russia .

 

Auditorium A

Session 8. Quantum Informatics IV

Session Chairman: Leonid Fedichkin, Institute of Physics and Technology, RAS , Moscow, Russia

11.20

q2-01

Quantum information and spectroscopy of cold Rydberg atoms. I.I. Ryabtsev, I.I. Beterov, D.B. Tretyakov, V.M. Entin, E.A. Yakshina. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia .

11.40

q2-02

Creating a single-atom array for quantum computation using Rydberg blockade in an atomic ensemble. D.B. Tretyakov , I.I. Beterov, V.M. Entin, E.A. Yakshina, and I.I. Ryabtsev. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia .

12.00

q2-03

Integrated diamond nanostructures for quantum informatics. V . P Popov 1 L . N Safronov 1 V . A Antonov 1 S . N Podlesnyi 1 A . V Shishaev 1 I . I Ryabtsev 1 N Kupriyanov 2 Yu . N Pal  yanov 2 1. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia. 2. Sobolev Institute of Geology and Mineralogy, SB RAS, Novosibirsk, Russia .

12.20

q2-04

Color centers in nanodiamonds of different origin. I.I. Vlasov1 , V.G. Ralchenko1, O. Shenderova2, A.A. Shiryaev3, A.A. Khomich1, V.S. Sedov1, M.S. Komlenok1, V.S. Pavelyev4,5, K.N. Tukmakov5, S. Turner6, F. Jelezko 7, J. Wrachtrup8, V.I. Konov1General Physics Institute, RAS, Moscow, Russia. 2 International Technology Centre, Raleigh, USA. 3 Institute of Physical Chemistry, RAS, Russia. 4Image Processing Systems Institute RAS, Samara, Russia. 5Samara State Aerospace University, Samara, Russia. 6 EMAT, University of Antwerp, Antwerpen, Belgium. 7Institute for Quantum Optics, Ulm University, Ulm, Germany. 8Physical Institute and Research Center SCOPE, Stuttart University, Stuttgart, Germany .

12.40

q2-05

Quantum register based on structured diamond waveguide with NV centers. A.V. Tsukanov, I.Yu. Kateev, A.A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Science, Moscow, Russia .

 

 

Auditorium B

Session 9. Workshop Silicon-on-Insulator I

Session Chairmen: Alexander Orlikovsky, Institute of Physics and Technology, RAS, Russia

11.20

W2-01

INVITED: Random telegraph noise diagnostics of nanowire SOI MOSFETs. A.N. Nazarov1, I. Ferain2, R. Yu2, A. Kranti2, P. Razavi21. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kiev, Ukraine. 2. Tyndall National Institute, Cork, Ireland .

11.45

W2-02

INVITED: SOI structure with Si-nanoclusters embedded in the oxide layer prepared by low-dose co-implantation. V. Litovchenko, B. Romanyuk, V. Ìå lniê , O. Oberemok, V. Popov, A. Sarikov. V. Lashkarev Institute of Semiconductor Physics, NAS of Ukraine, Kiev, Ukraine .

12.10

W2-03

Quantum noise in field-effect nanotransistors. V. Vyurkov, S. Filippov, I. Semenikhin, A. OrlikovskyInstitute of Physics and Technology, RAS, Moscow, Russia .

12.30

W2-04

Revision of interface coupling in ultra-thin body SOI MOSFETs. T. Rudenko1, A. Nazarov1, V. Kilchytska2, D. Flandre21. Institute of Semiconductor Physics, National Academy of Ukraine, Kyiv, Ukraine. 2. ICTEAM Institute, Universite catholique de Louvain .

12.50

W2-05

Noise characteristics of nanoscaled SOI MOSFETs. N. Lukyanchikova1, N. Garbar1V. Kudina1, A. Smolanska1, E. Simoen2, C. Claeys2,3 1. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kiev, Ukraine. 2. IMEC, Leuven, Belgium. 3. KU Leuven, Belgium .

13.10-14.00 Lunch

 

Conference Hall

Session 10. Workshop Silicon-on-Insulator II

Session Chairmen: Alexey Nazarov , Institute of Semiconductor Physics, NASU, Kyiv, Ukraine

14.00

W2-06

INVITED: Threshold voltage of advanced MOSFETs: Physical criteria and experimental extraction methods. T. Rudenko1, A. Nazarov1, V. Kilchytska2, D. Flandre21. Institute of Semiconductor Physics, National Academy of Ukraine, Kyiv, Ukraine. 2. ICTEAM Institute, Universite catholique de Louvain .

14.30

W2-07

Electrical characterization of high-k gate dielectrics for future CMOS technology. Y.Y. Gomeniuk 1 , Y.V. Gomeniuk1, A.N. Nazarov1, I.P. Tyagulskii1, V.S. Lysenko1, K. Cherkaoui 2, S. Monaghan2, P.K. Hurley21. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kiev, Ukraine. 2. Tyndall National Institute, University College Cork, Lee Maltings, Ireland .

1 4. 50

W2-08

The mobility models for TCAD simulation of extremely thin nanoscale SOI MOSFETs Y. Chaplygin, A. Krasjukov, T. Krupkina, I. Titova National Research University of Electronic Technology, Moscow, Russia .

15.10

W2-09

SOI CMOS RadHard SRAM 256K, 1M, and 4M N. Alieva1, A. Belous1, V. Bondarenko2, L. Dolgyi2, E. Lozitskyi1, S. Soroka 1, G. Usov1, A. Turzevich1, S. Shvedov1 1. «Integral» Join Stock Company, Minsk, Belarus. 2. Belarussian State University of Informatics and Radioelectronics, Minsk, Belarus .

15.30

W2-10

Carrier mobility in SOI layers with bonded interface. O.V. Naumova, B.I. Fomin, V.P. Popov Institute of Semiconductor Physics, RAS, Novosibirsk, Russia .

 

Auditorium A

Session 11. Quantum Informatics V

Session Chairman: Eduard Fel’dman, Institute of Problems of Chemical Physics, RAS, Russia

14.00

q2-0 6

INVITED: Charge pumping with Coulomb blockade devices Yu.A. Pashkin Physics Department, Lancaster University, United Kingdom, NEC Smart Energy Research Laboratories and RIKEN Advanced Science Institute, Tsukuba, Japan .

14.30

q2-07

Quantum discord in Materials with electron and nuclear spins. M.A. YurishchevInstitute of Problems of Chemical Physics, RAS, Chernogolovka, Russia .

14.50

q2-08

On the time-optimal implementation of quantum Fourier transformation for qudits represented by quadrupole nucleus. V.P. Shauro, V.E. Zobov. L. V. Kirensky Institute of Physics, Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, Russia .

15.10

q2-09

A spin chain under the pulse conditions as a quantum data channel. M.M. KutcherovInstitute of Space and Information Technology, Siberian Federal University, Krasnoyarsk, Russia .

15.30

q2-1 0

A unitary invariant measure of quantum correlations. A.I. Zenchuk. Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia .

15.50

q2-11

Quantum correlations in a nanopore filled with a gas of spin-carrying molecules (atoms) in a strong magnetic field. E.B. Fel’dman, E.I. Kuznetsova, M.A. Yurishchev. Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia .

 

Auditorium B

Session 12. Magnetic Micro- and Nanostructures

Session Chairman: Mikhail Chuev, Institute of Physics and Technology, RAS, Russia

14.00

O2-05

INVITED: On the thermodynamics of antiferromagnetic nanoparticles and macroscopic quantum effects observed by M o ssbauer spectroscopy. M.A. ChuevInstitute of Physics and Technology, RAS, Moscow , Russia .

14.30

O2-06

Characterization of nanoparticles in a media using multilevel models of magnetic dynamics I. Mischenko 1 , M. Chuev 1 , V. Cherepanov 2 , M. Polikarpov 2 , V. Panchenko 2 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. National Research Centre «Kurchatov Institute», Moscow, Russia .

14.50

O2-07

The effect of technological factors on micromagnetic states of magnetic nanostructures O.S. Trushin 1 , V.V. Naumov1, V.F. Bochkarev1, N. Barabanova2, V.A. Paporkov2 1. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia. 2. Yaroslavl State University, Yaroslavl, Russia .

15.10

O2-08

Magnetoresistance of multilayer ferromagnetic nanoparticles S.N. Vdovichev, B.A. Gribkov, S.A. Gusev, A.Yu. Klimov, V.L. Mironov, I.M. Nefedov, V.V. Rogov, A.A. Fraerman, I.A. Shereshevskii Institute for Physics of Microstructures, RAS, Nizhniy Novgorod, Russia .

15.30

O2-09

Magnetic logical cells based on domain wall pinning effects in ferromagnetic nanowire-nanoparticles systems V.L. Mironov , O.L. Ermolaeva, E.V.Skorohodov, A.Yu. Klimov Institute for Physics of Microstructures, RAS, Nizhniy Novgorod, Russia .

15.50

O2-10

Field-induced transitions in ferrimagnetic chain of spins: stability of ferromagnetic and antiferromagnetic phases. M. KostyuchenkoYaroslavl State Technical University, Yaroslavl, Russia .

16.10-16.30 Coffee break

16.30-18.30 Entresol. POSTER SESSION I

Bottom hall. EXHIBITION

19.00 Dinner

 

Thursday, October 4th 2012

08.15 Breakfast

 

Conference Hall

Session 13 Micro- and Nanodevices I

Session Chairman: Vladimir Vuyrkov, Institute of Physics and Technology, RAS, Russia

9 .00

O3-01

Current state and new prospects of semiconductor infrared photoelectronics V. Ponomarenko1,2, A. Filachev11. R&P Association «Orion», Moscow, Russia. 2. MIPT, Dolgoprudny, Russia .

9.20

O3-02

Silicon nanowire field effect transistor with highly doped leads S. Amitonov 1 , D. Presnov1,2, K. Rudenko3, V. Rudakov3, V. Krupenin1 1. Laboratory of Cryoelectronics, Moscow State University, Moscow, Russia. 2. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 3. Institute of Physics and Technology, RAS, Moscow, Russia .

9.40

O3-03

Electronic band alignment and electron transport in Cr/BaTiO3/Pt ferroelectric tunnel junctions A. Zenkevich 1 , M. Minnekaev 1 , Yu. Matveyev 1 , Yu. Lebedinskii 1 , K. Bulakh 2 , A. Chouprik 2 , A. Baturin 2 , S. Thiess 2 , W. Drube 2 1. National Research Nuclear University «Moscow Engineering Physics Institute», Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany .

1 0. 00

O3-04

A gold free fully copper metalized GaAs pHEMT for the high frequency applications. E. Erofeev 1 , V. Kagadei1, A. Kazimirov21. Research and Production Company «Micran», Tomsk, Russia. 2. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia .

 

Auditorium A

Session 14. Metrology and Characterization

Session Chairman: Konstantin Rudenko, Institute of Physics and Technology, RAS, Russia

09.00

O3-05

Measurement of thickness of a layer of natural silicon oxide being on a test relief pitch structure, created on a substrate of monocrystalline silicon. M.N. Filippova,b,c, V.P. Gavrilenkoa,cA.A. Kuzina,c, A.Yu. Kuzinc, A.A. Kuzmina,c, V.B. Mityukhlyaeva, A.V. Rakova, P.A. Toduaa,c, A.V. Zablotskiya,c a Center for Surface and Vacuum Research, Moscow, Russia; b N.S. Kurnakov Institute of General and Inorganic Chemistry, Moscow, Russia; cNational Research University «Moscow Institute of Physics and Technology», Dolgoprudny, Moscow Region, Russia . /p>

09.20

O3-06

Characterization of graphene layers grown using Ni/a-SiC bi-layer as a precursor. A.V. Vasin1, S.A. Gordienko1, P.M. Lytvyn1, V.V. Strelchuk1, A.S. Nikolaenko 1, A.N. Nazarov1, A.V. Rusavsky1, V.S. Lysenko1, V. Popov21. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kiev, Ukraine. 2. Institute of Rzhanov Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia .

9.40

O3-07

Characterization of semiconductor heterostrucrures using Dynamic Secondary Ion Mass Spectrometry B. Ber 1,2 , A. Merkulov 3 1. A.F. Ioffe Physical-Technical Institute, RAS, St Petersburg, Russia; 2. Center of Multi-User Equipment «Material Science and Characterization for Advanced Technologies», St Petersburg, Russia. 3. CAMECA SAS, Gennevilliers, Cedex, France .

10.00

O3-08

Determination of the state of non-volatile memory cell with the floating gate by using scanning probe microscopy D. Hanzii 1 , E. Kelm 2 , N. Luapunov 2 R. Milovanov 2 , G. Molodcova 2 , M. Yanul 1 , D. Zubov 2 1. NT-MDT, Zelenograd, Russia. 2. Institute of Nanotechnology of Microelectronics, RAS, Moscow, Russia .

10.20

O3-09

Mechanisms of image formation in SEM. Yu.V. Larionov, Yu.A. Novikov A.M. Prokhorov General Physics Institute, RAS, Moscow, Russia .

10.40

O3-10

Virtual scanning electron microscope Yu.V. Larionov , Yu.A. Novikov A.M. Prokhorov General Physics Institute, RAS, Moscow, Russia .

 

Auditorium B

Session 15. Micro- and Nanoelectronic Structures I

Session Chairman: Igor Neizvestnyi, A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia

09.00

O3-11

Formation mechanism and properties of Ge quasicrystalline nanoclusters in SiOx matrix. Yu.N. Kozyrev1M.Yu. Rubezhanska1, V.S. Lysenko2, S.V. Kondratenko3, V.P. Kladko2, Yu.V. Gomeniuk2, Ye.Ye. Melnichuk31. O.O. Chuiko Institute of Surface Chemistry, Kyiv, Ukraine. 2. Institute of Semiconductor Physics, Kyiv, Ukraine. 3. Taras Shevchenko national University of Kyiv, Ukraine.

09.20

O3-12

Photoluminescence of Si layers on grown SiO2 and optical resonant structures A.A. Shklyaev 1, 2 , D.V. Gulyaev1D.E. Utkin1, A.V. Tsarev1A.V. Dvurechenskii1, A.V.Latyshev1, 2 1. A .V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia. 2. Novosibirsk State University, Novosibirsk, Russia .

9.40

O3-13

Influence of metamorphic buffer design on electrophysical and structural properties of MHEMT nanoheterostructures In0.7Al 0.3As/In0.7Ga0.3As/In0.7Al0.3As/GaAs. S.S. Pushkarev1,2, G.B. Galiev1, E.A. Klimov1, D.V. Lavrukhin1, I.S. Vasil’evskii 2, R.M. Imamov3, I.A. Subbotin3, O.M. Zhigalina3, V.G. Zhigalina3, P.A. Buffat4, B. Dwir4Å .I. Suvorova 3,4 1. Institute of Ultrahigh Frequency Semiconductor Electronics, RAS, Moscow, Russia. 2. National Nuclear Research University «MEPHI», Moscow, Russia. 3. A.V. Shubnikov Institute of Crystallography of RAS, Moscow, Russia. 4. Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland .

10.00

O3-14

GaN layers with low dislocation density and high electron mobility grown by high-temperature ammonia-MBE S.I. Petrov1, A.N. Alexeev1, D.M. Krasovitsky2, V.P. Chaly2, V.V. Mamaev1 1. SemiTEq JSC, Saint-Petersburg, Russia. 2. Svetlana-Rost JSC, Saint-Petersburg, Russia .

10.20

O3-15

Formation, optical, electrical, and thermoelectrical properties of silicon nanocomposites with embedded Mg2Si nanocrystallites K.N. Galkin1, S.V. Vavanova1, N.G. Galkin1, R. Kudrawiec2, E. Zielony2, A. Misiewicz2 1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladovostok, Russia. 2. Institute of Physics, Wroclaw University of Technology, Wroclaw, Poland .

10.40

O3-16

Laser pulse crystallization and optical properties of Si/SiO2 and Si/Si3N4 multilayer nano-heterostructures V . A Volodin 1 S .A. Arzhannikova1 , A.A. Gismatulin 1 G.N. Kamaev1, A.H. Antonenko1, S.G. Cherkova1, S.A. Kochubei1, A.A. Popov2, H. Rinnert3, and M. Vergnat3 1. Institute of Semiconductor Physics, RAS; Novosibirsk State University, Novosibirsk, Russia. 2. Yaroslavl Department of FTI RAS, Yaroslavl, Russia. 3. Institut Jean Lamour UMR CNRS — Nancy Universite — UPV Metz, Faculte des Sciences et Technologies, Vand?uvre-les-Nancy Cedex, France .

11.00-11.20 Coffee break

 

Conference Hall

Session 16. Plasma and Ion Beam Technologies I

Session Chairman: Konstantin Rudenko, Institute of Physics and Technology, RAS, Russia

11.20

O3-17

INVITED: Fundamentals and applications of Plasma ALD in nanoelectronics . Ch. HodsonOxford Instruments Plasma Technology, UK.

11.50

O3-18

INVITED: Applications of Plasma Immersion Ion Implantation for advanced micro/nano electronics: Challenges and case samples using IBS PULSION R Tool F. Torregrosa 1 , J. Duchaine1, S. Spiegel1, G. Borvon1, F. Milesi2, K. Hassouni3, K. Maury 3 1. IBS, ZI Peynier Rousset, Peynier, France. 2. CEA-Leti MINATEC Campus, Grenoble Cedex 9, France. 3. Laboratoire des Sciences des Procedes et des Materiaux, LSPM, CNRS-UPR3407 Universite Paris 13, Villetaneuse, France .

12. 20

O3-19

Comparative investigation of ultra-shallow boron implantation into bulk silicon and SOI structures by PIII technique A. Miakonkikh 1 , K. Rudenko1, V. Rudakov2, A. Orlikovsky1 . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Yaroslavl Branch of Institute of Physics and Technology, RAS, Yaroslavl, Russia .

12.40

O3-20

Etching characteristics of GaAs in CCl2F2/Ar inductively coupled plasma D.B. Murin, V.I. Svettsov, A.M. Efremov, A.E. Leventsov Ivanovo State University of Chemical Technology, Ivanovo, Russia .

13.00

O3-21

The effects of additive gases (Ar, N2, H2, Cl2, O2) on HCl plasma parameters and composition. A. Efremov, A. Yudina, A. Davlyatshina, V. Svettsov Ivanovo State University of Chemistry and Technology, Ivanovo, Russia .

 

Auditorium A

Session 17. Quantum Informatics VI

Session Chairman: Farid Ablayev, Institute for Informatics of Tatarstan Academy of Sciences, Kazan, Russia

11.20

q3-01

INVITED: Entanglement in a system of harmonic oscillators Yu. Ozhigov Moscow State University; Institute of Physics and Technology RAS, Moscow, Russia .

11.50

q3-02

The strong influence of weak observers on the electron dynamics in large coupled quantum dots clusters L. Fedichkin 1,2,3 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. NIX, Moscow, Russia .

12.10

q3-03

Analysis of quantum processes: methods and results A.Yu. Chernyavskiy 1,2 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. 2. Moscow State University, Moscow, Russia .

12.30

q3-04

Entanglement-annihilating quantum dynamical processes S.N. Filippov 1,2 1. Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Russia .

12.50

q3-05

Euclidean qubits versus conventional quantum circuits A.Yu. Vlasov 1,2 1. Federal Radiology Center, IRH, St.-Petersburg, Russia. 2. A. Friedmann Laboratory for Theoretical Physics, St.-Petersburg, Russia .

 

Auditorium B

Session 18. Micro- and Nanoelectronic Structures II

Session Chairman: Oleg Trushin , Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia

11.20

O3-22

The conductive layers on the base of multiwalled carbon nanotubes . L.P. Ichkitidze 1 , B.M. Putrya1, S.V. Selishchev1, E.V. Blagov2, A.A. Pavlov2, V.A. Galperin3 , E.P. Kitsyuk3, Yu.P. Shaman31. National Research University of Electronic Technology «MIET» , MIET, Zelenograd, Moscow, Russia. 2. Institute of Nanotechnology of Microelectronics, RAS, Moscow, Russia. 3. Scientific-Manufacturing Complex «Technological Centre», MIET, Zelenograd, Moscow, Russia.

11.40

O3-23

Investigation of nucleation and field emission characteristics of carbon nanowalls grown on porous silicon S. Evlashin,Y. Mankelevich, A. Pilevskii, V. Borisov, P. Shevnin, A. Stepanov, N. Suetin, A. Rakhimov Skobeltsyn Institute of Nuclear Physics, Moscow, Russia .

12.00

O3-24

Properties of thin HfO2 gate dielectric formed by plasma ALD process A. Miakonkikh , A. Rogozhin, K. Rudenko, A. Orlikovsky Institute of Physics and Technology, RAS, Moscow, Russia .

12.20

O3-25

Effect of nanodimensional polyethylenimine layer on surface potential barriers of hybrid structures based on silicon single crystal I.V. Malyar, D.A. Gorin, S.V. Stetsyura. Saratov State University, Saratov, Russia .

12.40

O3-26

Possible influence of nanoobjects on properties of nanomaterials. S.P. Timoshenkov, I.M. Britkov, O.M. Britkov, S. Evstafiev, A.S. Timoshenkov, B.M. Simonov, E.P. Prokopev. Federal State Budgetary Institution of Higher Education «National Research University «MIET», Zelenograd, Russia .

13.20-14.00 Lunch

 

Conference Hall

Session 19. Micro- and Nanoelectromechanical Systems

Session Chairman: Sergey TimoshenkovNational Research University of Electronic Technology, Microelectronics Dept., Zelenograd, Moscow, Russia .

14.00

O3-27

INVITED: The physical and technological problems in design of pressure sensors with nano-scale piezoresistors. I. Neizvestnyi1, G. Kamaev1, V. Gridchin2, A. Cherkaev21 A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia; 2Novosibirsk State Technical University, Novosibirsk, Russia.

14.30

O3-28

Design and fabrication of piezoelectric MEMS. S. Timoshenkov, V. Vodopyanov, N. Korobova. National Research University of Electronic Technology, Department of Microelectronics, Zelenograd, Moscow, Russia .

14.50

O3-29

New electronic system converter linear acceleration with custom output characteristics S. Timoshenkov , A. Timoshenkov, A. Shalimov National Research University of Electronic Technology, Microelectronics Dept., Zelenograd, Moscow, Russia .

15.10

O3-30

Resonance properties of multilayer metallic nanocantilevers . I. Uvarov, V. Naumov, I. AmirovYaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia.

15.30

O3-31

Modeling of two-axis micromechanical gyroscope-accelerometer. I.E. LysenkoTaganrog Institute of Technology — Southern Federal University, Taganrog, Russia .

1 5. 50

O3-32

Matrix propulsion microthruster for nanosatelites V. Bondarenko 1 , K. Dobrego2, L. Dolgyi1, A. Klushko1, E.Chubenko1, S. Futko2 1. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus. 2. A.V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus,Minsk, Belarus .

 

Auditorium A

Session 20. Quantum Informatics VII

Session Chairman: Yuri Ozhigov, Moscow State University, Moscow, Russia

14.00

q3-06

On the validity of neoclassical theory of the Compton effect for revision and reformulation of the standard quantum mechanics interpretation. V.V. AristovInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Russia .

14.20

q3-07

Why quantum computing can be real only in multiple universes V.V. Aristov, A.V. NikulovInstitute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia .

14.40

q3-08

Simulations of adiabatic and nonadiabatic chemical reactions in condensed media. K. ArakelovMoscow State University, Moscow, Russia .

15.00

q3-09

Quantum implication and strategies for multi-agent models A.A Ezhov, A.G. Khromov, S.S. Terentyeva Science Research Center of Russian Federation Troitsk Institute for Innovation and Fusion Research, city district Troitsk, Moscow, Russia .

 

Auditorium B

Session 21. Plasma and Ion Beam Technologies II

Session Chairman: Alexander Efremov , Ivanovo State University of Chemical Technology, Ivanovo, Russia

14.00

O3-33

INVITED: Formation of Nanoscale Structures by Inductively Coupled Plasma Etching . C. WelchOxford Instruments Plasma Technology, UK.

14.3 0

O3-34

Plasma etching of silicon for MEMS and optical applications: Comparison of RIE, Bosch and cryogenic processes . I. Amirov1V. Lukichev1, V. Yunkin21. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Institute of Microelectronics Technology, RAS, Chernogolovka, Russia .

14.5 0

O3-35

Low-temperature synthesis of carbon nanotubes by plasma enhanced chemical vapor deposition. V.A. Galperin, A.A. Pavlov, Yu.P. Shaman, A.A. Shamanaev, S.N. Skorik Scientific-Manufacturing Complex «Technological Centre», Moscow, Russia .

15.1 0

O3-36

Photovoltaic properties of porous-Si:He/Si structure produced by plasma immersion ion implantation A. Rogozhin A. Miakonkikh, K. Rudenko Institute of Physics and Technology, RAS, Moscow, Russia .

15.3 0

O3-37

On a way to fabrication technology of u ltra thin Si on sapphire. V. Chernysh 1 , A. Shemukhin2, Yu. Balakshin1, N. Egorov3, V. Goncharov3, S. Golubkov3, A. Sidorov3, B. Malukov3, V. Statsenko4, V. Chumak4 1. Faculty of Physics, Moscow State University, Moscow, Russia. 2. Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 3. Research Institute of Material Science and Technology, Zelenograd, Russia. 4. Epiel Joint Stock Company , Zelenograd, Russia .

1 5.50

O3-38

Nonlinear waves and structures induced by ion bombardment of solids S. Krivelevich1, D. Korshunova2, N. Pron2 1. Yaroslavl Branch of the Institute of Physics and Technology , RAS, Yaroslavl, Russia. 2. Yaroslavl State University, Yaroslavl, Russia .

16.10-16.30 Coffee break

16.30-18.30 Entresol. POSTER SESSION II

Bottom hall. EXHIBITION

18.30. Conference Hall. CLOSING CONFERENCE REMARKS

À . À . Orlikovsky, Program Committee Chair,

Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

 

19.30 CONFERENCE DINNER

 

Friday, October 5th, 2012

09.00 Breakfast

10.00 DEPARTURE

Oral Presentations | Posters

Monday, October 5th, 2009

9.00 — …Registration & Accommodation
13.00 — 14.00 Lunch

Conference hall

Special Session. Presentations of Hi-Tech Companies

14.30

S-00/1

Milestones of analytical FE-SEM technology — Zeiss Merlin System. Uwe Anton Schubert, Carl Zeiss NTS GmbH, Germany.

15.00

S-00/2

Electron beam lithography tools for nanoelectronic devices. Leonid LitvinRaith GmbH, Germany

15.30

S-00/3

Applications of Electron Beam Lithography. Martin Kirchner, Raith GmbH, Germany

16.00

S-01

JEOL Industrial Electron Beam Lithography SystemsMr. Kamide, General Manager of JEOL Semiconductors Equipment Department

16.30

S-02

Nanoimprint Lithography: Principles, Possibilities, and High Volume Manufacturing. Marc BeckEurotek, Inc., Germany

17.00

S-03

TechnoInfo products overview. A. KuznetsovTechnoinfo Ltd., London, UK

17.30

S-04

Technological complexes for MEMS and NEMS research and development. Victor Bykov. NT-MDT Co.,  Zelenograd, Russia

18.00 — Welcome Party
19.00 — Dinner

Tuesday, October 6th, 2009

8.15 — Breakfast

Conference hall

8.50 — WELCOME REMARKS

E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow
K.A. Valiev, Program Chair, IPT RAS, Moscow

Plenary Session I 

Session Chairman: Alexander Orlikovsky, Institute of Physics &Technology RAS,  Russia

9.00

L1-01

KEYNOTE: Nanoelectronic devices and materials for the end of the roadmap. G. Ghibaudo and F. Balestra. IMEP-LAHC, Minatec (CNRS-Grenoble INP, UJF, US), Grenoble, France

9.40

L1-02

KEYNOTEChallenges of Advanced Interconnects: from Cu/low-k to Wireless. T. Kikkawa. Research Institute for Nanodevice and Bio Systems, Hiroshima University, Japan.

10.20

L1-03

INVITEDElectromigration theory and its applications to integrated circuit metallization. T. Makhviladze, M. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

11.00

L1-04

INVITED: IMEC: from aggressive CMOS scaling to Nanomaterials. Mikhail Baklanov and Patric Verbist. Interuniversitair Microelectronica Centrum (IMEC), Leuven, Belgium.

11.40-12.00 Coffee break. Winter garden

Conference Hall

Session 1. Advanced Lithography

Session Chairman: Vladimir Lukichev, Institute of Physics &Technology RAS, Russia

12.00

L1-05

INVITEDImmersion Lithography and Double Patterning in Advanced Microelectronics. T. Vandeweyer, J. Bekaert, M. Ercken, R. Gronheid, A. Miller, V. Truffert, J. Versluijs, V. Wiaux, P. Wong, G. Vandenberghe, M. Maenhoudt. IMEC vzw, Leuven, Belgium

12.30

O1-01

Projection photolithography modeling using the finite-difference time-domain approach. T. Makhviladze, M. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia.

12.50

O1-02

Influence of thermal annealing on the structural and optical properties of thin multilayer EUV filters containing Zr, Mo and silicides of these metals. N.I. Chkhalo1, S.A. Gusev1, M.N. Drozdov1, E. B. Kluenkov1, A.Ya. Lopatin1, V.I. Luchin1, A.E. Pestov1, N.N. Salashchenko1L.A. Shmaenok2, N.N. Tsybin1. 1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia 2. PhysTeX, Vaals, Netherlands Institute of Semiconductor.

13.10

O1-03

Manufacturing of diffraction quality optical elements for high resolution optical systems. N.I. Chkhalo, A.E. Pestov, N.N. Salashchenko, M.N. Toropov. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

Auditorium A

Session 2. Simulation and Modeling I

Session Chairman: Vladimir Vyurkov, Institute of Physics &Technology RAS,  Russia

12.00

O1-04

Nanoelectronic device simulation software system NANODEV: New opportunities. I.I. Abramov, A.L. Baranoff, I.A. Goncharenko, N.V. Kolomejtseva, Y.L. Bely. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.

12.20

O1-05

The charge sharing inside the layers of nano- CMOS integrated structures under controllable substrate biasing. T. Krupkina, D. Rodionov, A. Shvets, I. Titova. Moscow Institute of Electronic Engineering,  Moscow, Russia

12.40

O1-06

Analysis of lateral thermal SOA for smart power IC’s. Yu. Chaplygin, А. Krasukov, E. Artamonova.  Moscow Institute of Electronic Technology (Technical University

13.00

O1-07

Advanced atomic-scale simulation of silicon nitride CVD from dichlorosilane and ammonia. T. Makhviladze, A. MinushevInstitute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

Auditorium B

Session 3. Photonics and Optoelectronics I

Session Chairman: Sergey Nikitov, Institute of Radioengineering and Electronics RAS, Russia

12.00

O1-08

One-dimensional Photonic Crystals on Silicon as Optical Elements for Integrated Microphotonics. V. Tolmachev1, E. Astrova1, T. Perova2. 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia, 2. Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland

12.20

O1-09

Reduction of noise in atomic system driven by squeezed coherent field. A. Gelman, V. Mironov. Institute of Applied Physics of Russian Academy of Sciences, Nizhny Novgorod , Russia

12.40

O1-10

Enhancement of Optical Properties by Surface Nanostructuring. V.V. Nanumov1 , V.A. Paporkov2 , N.A. Rud2 , E.I. Vaganova1 , A.V. Prokaznikov1. 1. Yaroslavl Branch of Institute of Physics and Technology RAS, Yaroslavl, Russia 2. Yaroslavl State University named after Demidov P.G., Yaroslavl, Russia

13.00

O1-11

Excitation dependence of infrared emission at 1.5-1.6 µm from defect-rich Si layers. A.A. Shklyaev1,2, A.B. Latyshev1,2, M. Ichikawa3 1. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia 3. Quantum-Phase Electronics Center, Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Tokyo, Japan

13.30-14.30 Lunch

Conference Hall

Session 4. Nanodevices and Nanostructures I

Session Chairman: Vitaly Aristov. Institute of Microelectronics Technology, RAS,  Russia

14.30

O1-12

Electronic transport in heterogeneous nanometer FET channels. V. P. Popov. Institute of Semiconductor Physics, Novosibirsk, Russia

14.50

O1-13

Ballistic and Pseudo-Relativistic Carrier Transport in Graphene. G. I. Zebrev. Micro- and Nanoelectronics Department, National Research Nuclear University “MEPHI”, Moscow, Russia

15.10

O1-14

Comparative studies of single- and double-nanocrystal layer NVM structures: charge accumulation and retention. V. Turchanikov1, V. Ievtukh1, A. Nazarov1, V. Lysenko1, M. Theodoropoulou2, A.G. Nassiopoulou2 . 1. Lashkaryov Institute of Semiconductor Physics NASU, Kyiv, Ukraine, 2. IMEL/NCSR Demokritos, Athens-Greece

15.30

O1-15

Silicon nanoballs recharging in plasma-chemical oxide of nanometric thickness. M.D. Efremov1,2, S.A. Arzhannikova1,2, V.A. Volodin1,2, G.N. Kamaev1,2, S.A. Kochubei1, I.G. Neizvestny1 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia

15.50

O1-16

Charges and states in nitrided buried dielectrics of SOI structures. V. P. Popov, I.E. Tyschenko. Institute of Semiconductor Physics, Novosibirsk, Russia.

Auditorium A

Session 5. Superconducting Structures and Devices I

Session Chairman: Vladimir Lukichev, Institute of Physics &Technology RAS, Russia

14.30

L1-06

INVITED: Thermo-Electric Charge-to-Voltage Converter with an SIN Tunnel Junction for Bolometer Applications. L. Kuzmin. Chalmers University of Technology, Goteborg, Sweden.

15.00

O1-17

DC SQUID modulation electronics for operation with HTS DC SQUID magnetometers in the unshielded environment. E.V. Burmistrov, V.Yu. Slobodchikov, V.V. Khanin, Yu.V. Maslennikov. Kotel’nikov Institute of Radio Engineering and Electronics of RAS, Moscow, Russia

15.20

O1-18

Properties of planar Nb/?-Si/Nb Josephson junctions with various doped degree of ?-Si interlayers. A.L. Gudkov, A.A. Gogin, A.I. Kozlov, A.N. Samys. CJSC «Compelst», FSUE «SRIPP n. F.V. Lykin»,  Moscow,  Zelenograd, Russia

15.40

O1-19

The theoretical analysis of  the new microwave detector based on a Josephson heterostructure. I.A. Devyatov1,  M.Yu. Kupriyanov2 . 1. Lomonosov Moscow State University, Russia 2. Skobeltsyn Institute of Nuclear Physics, Moscow, Russia

16.00

O1-20

«Сonventional» SQUIDs and quantum interferometers on matter waves in superfluid helium. A. Golovashkin1, G. Izmaїlov2, G. Kuleshova3, A. Tshovrebov1, L. Zherikhina1 . 1. Lebedev Physical Institute, Russian Academy of Science, Moscow, Russia; 2. Moscow Aviation Institute (State Technical University), Moscow,  Russia 3. Moscow Engineering Physics Institute (State University) , Moscow, Russia

Auditorium B

Session 6. Thin Films

Session Chairman: Andrey Vasiliev, FSU Enterprise“Pulsar”, Russia

14.30

O1-21

The thermodynamic theory of interfacial adhesion between materials containing point defects. R. Goldstein1, T. Makhviladze2, M. Sarychev2 1. Institute for Problems in Mechanics, Russian Academy of Sciences, Russia, 2. Institute of Physics and Technology, Russian Academy of Sciences, Russia.

14.50

O1-22

The thickness-dependence of the polariton effect in the single quantum well. Yu.V. Moskalev1, S.B. Moskovski2. 1. Yaroslavl State Pedagogical University, Yaroslavl, Russia, 2. Yaroslavl State University, Yaroslavl, Russia

15.10

O1-23

CoSi2/TiO2/SiO2/Si gate structure formation. A.E. Rogozhin 1, I.A Khorin 1,2, V.V. Naumov 1, A.A. Orlikovsky 1, V.V. Ovcharov 1, V.I. Rudakov 1, A.G. Vasiliev 1,3 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia, 2. Moscow State Institute of Radio-engineering, Electronics and Automation, Moscow, Russia, 3. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia

15.30

O1-24

Local performances of PZT films with a thickness less than 100 nanometers. V.M Roshchin, M.V. Silibin. Moscow Institute of Electronic Technologies (Technical University), Zelenograd, Russia

15.50

O1-25

Polysilicon Inductive Elements for IC’s. A.M. Pashayev, F.D. Kasimov., R.A. Ibragimov. National Academy of Aviation, Baku, Azerbaijan

16.30-17.00 Coffee break. Winter garden.

Conference Hall

Session 7. Devices and ICs

Session Chairman: Boris Konoplev,
Taganrog Institute of Technology — Southern Federal University, Russia

17.00

O1-26

SiGe and GaN heterostructure microwave devices. A.G. Vasiliev, Y.V. Kolkovsky, S.V. Korneev, A.A. Dorofeev, V.M. Minnebaev. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia

17.20

O1-27

Methods of cache memory optimization for multimedia applications. A. Kravtsov. JSC Mikron, Moskow, Zelenograd, Russia

17.40

O1-28

Integrated Injection Laser with Amplitude Modulation in Terahertz Band. B. Konoplev1,2, E. Ryndin2, M. Denisenko1. 1. Taganrog Institute of Technology — Southern Federal University, Taganrog, Russia, 2. Southern Scientific Center of Russian Academy of Sciences, Rostov-on-Don, Russia

18.00

O1-29

Gas medium influence on characteristics stability of electroformed structures Si-SiO2-W and reliability of switching processes of memory elements on the basis of these structures. V.M. Mordvintsev, S.E. Kudryavtsev, V.L. Levin, L.A. Tsvetkova. Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Russia

18.20

O1-30

Low-resistance Ge/Au/Ni/Ti/Au based ohmic contact to n-GaAs. E. Erofeev1, V. Kagadei2. 1. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia, 2. Research and production company “Micran”, Tomsk, Russia

Auditorium A

Session 8. Superconducting Structures and Devices II

Session Chairman: Mikhail Kupriyanov, Institute of Nuclear Physics, Moscow State University, Russia.

17.00

O1-31

Manipulating superconductivity with magnetism: from unconventional physical effects to cryogenic spintronics. L.R. Tagirov. Solid State Physics Department, Kazan State University, Kazan, Russia

17.20

O1-32

Magnetic field-tuned superconductor-insulator transition in PbTe/PbS heterostructures with superconducting interface. O. Yuzephovich1,2, S. Bengus1,2, M. Mikhailov1, A. Sipatov3, E. Buchstab4, N. Fogel4 1. Institute for Low Temperature Physics and Engineering, Kharkov, Ukraine,  2. International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland 3. National Technical University “Kharkov Polytechnical Institute” Kharkov, Ukraine 4. Solid State Institute, Technion, Haifa, Israel

17.40

O1-33

Could equilibrium noise be detected with help of series-connected asymmetric superconducting rings? V.L. Gurtovoi,  A.I. Ilin, A.V. Nikulov, V.A. Tulin. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia

18.00

O1-34

Superconductivity of polymers with charge injection doping. A.N. Ionov1, R. Rentzsch2. 1. A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia, 2. Institut fur Experimentalphysik, Freie Universitat Berlin, Berlin, Germany

Auditorium B

Session 9. Photonics and Optoelectronics II

Session Chairman: Sergey Nikitov, Institute of Radioengineering and Electronics RAS, Russia

17.00

O1-35

CMOS color image sensors. Current state and aspects. V.A. Gergel1, I.V. Vanyushin2 . 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia.2.  LCC “SensorIС”, Moscow, Russia

17.20

O1-36

Monolithic photodetector 32×32. A.V. Sorochkin, M.V. Yakushev, S.A. Dvoretsky, A.I. Kozlov, I.V. Sabinina, Y.G. Sidorov, B.I. Fomin, A.L. Aseev. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia

17.40

O1-37

Improvement of Radiation Resistance of Multijunction Solar Cells by Application of Bragg Reflectors. V. Emelyanov, N. Kaluzhniy, S. Mintairov, M. Shvarts, V. Lantratov. Ioffe Physico-Technical Institute of RAS, St.-Petersburg, Russia

18.00

O1-38

Polycrystalline Silicon Short Wave Photodetectors. F.D. Kasimov., N.G. Javadov. National Academy of Aviation, Baku, Azerbaijan

 
19.00 Dinner

Wednesday, October 7th 2009

8.15 Breakfast 

Conference hall

Plenary Session II. Quantum Informatics

Session Chairman: K.A.Valiev, Institute of Physics and Technology, RAS, Russia

8.50

 

Introductory Remarks: Quantum informatics and complex systems. Yu.I. Ozhigov. M.V. Lomonosov Moscow State University, Russia

9.00

qL-01

INVITED: Quantum Mechanics as Emergent Phenomenon. A.  Khrennikov. International center for mathematical modeling in physics, engineering and cognitive science, University of Vaxjo, Sweden

9.30

qL-02

INVITED: Dynamical Decoupling Pushed to the Extreme. V.M. Akulin. Laboratoire Aime Cotton CNRS ,Orsay,  France

10.00

qL-03

INVITED: Tunneling without tunneling: wavefunction reduction in a mesoscopic qubit. J.A. Nesteroff and D. V. Averin. Department of Physics and Astronomy, Stony Brook University,  Stony Brook, NY, USA

10.30

qL-04

INVITED: Superconducting Qubits. E. Il’ichev. Institute of Photonic Technology, Jena, Germany

11.00 Coffee break

Conference Hall

Session 10. Carbon Nanostructures

Session Chairman: Anatoly Vyatkin, Institute of Microelectronics Technologies, RAS, Russia

11.20

L2-01

INVITED: Carbon nanostructures as new material for emission electronics. Yu. V. Gulyaev. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia

12.00

O2-01

Linear-chain carbon films for micro- and nanoelectronics. N.D. Novikov, A.F. Alexandrov, M.B. Guseva, V.V. Khvostov, N.F. Savchenko, Yu.V. Korneeva. Physics Department, M.V. Lomonosov Moscow State University, Moscow,  Russia

12.20

O2-02

Fabrication of device structures from single-walled carbon nanotubes selectively grown on patterned catalytic layers. O.V. Kononenko 1 , V.N. Matveev 1 , Yu.A. Kasumov1, I.I. Khodos1, D.V. Matveev2, V.T. Volkov1, A.I. Il’in1, M.A. Knyazev1 1. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia. 2. Institute of Solid State Physics Russian Academy of Sciences, Chernogolovka, Russia

12.40

O2-03

CNS catalyst growth from carbonaceous substrate. E. Ilyichev, V. Inkin, D. Migunov, G. Petruhin, E. Poltoratskii, G. Rychkov, D. Shkodin. FSUE “Res. Inst. of Phys. Problems named after F.V. Lukin”, Zelenograd

Auditorium A

Session 11. Quantum Informatics II

Session Chairman: Yuri Ozhigov, M.V.Lomonosov Moscow State University, Russia

11.20

q2-01

Simulation of entangled nuclei in two-atom association. B. Aksenov, Yu. Ozhigov. Lomonosov Moscow State University, Russia

11.40

q2-02

Could the Schrodinger’s Cat be used as Quantum Bit? V.V. Aristov, A.V. Nikulov.Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia

12.00

q2-03

Unified Statistical Method for Tomography of Quantum States by Purification. Yu.I. Bogdanov. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

12.20

q2-04

Information aspects of «which way» experiments with microparticles. Yu.I. Bogdanov1, K.A. Valiev1, S.A. Nuyanzin2, A.K. Gavrichenko1. 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia, 2. Moscow Institute of Electronic Technology (Technical University),Zelenograd, Russia

12.40

q2-05

Simulation of electron jumps in the collision of two hydrogen atoms. K. Burtniy1, Yu. Ozhigov1,2. 1. Institute of Physics and Technology, RAS, Moscow, Russia 2. M.V. Lomonosov Moscow State University, Russia

 13.00 Lunch

Conference hall

Session 12. Ion and Plasma Processing

Session Chairman: Alexander Efremov, Ivanovo State University of Chemistry & Technology,  Russia.

14.00

L2-02

INVITEDEvolution of Ion Implantation Technology Towards sub-45 nm Device Fabrication. S. I. Kondratenko, R. N. Reece, M. S. Ameen, M. A. Harris, and L. M. Rubin. Axcelis Technologies, 108 Cherry Hill Drive, Beverly, MA 01915 USA

14.30

L2-03

INVITED: Challenges and future prospects in plasma etching processes. O. Joubert1, E. Pargon1, T. Chevolleau1, G. Cunge1, L. Vallier1, T. David2, S. Barnola2, T. Lill3. 1. LTM (CNRS-UJF-INPG), France 2. CEA-LETI, France. 3. Applied Materials Inc., Santa Clara, USA

15.00

O2-04

The metal hard-mask approach for contact patterning. J.-F. de Marneffe, D. Goossens, D. Shamiryan, F. Lazzarino, Th. Conard, I. Hoflijk, H. Struyf and W. Boullart. IMEC v.z.w., Leuven, Belgium.

15.20

O2-05

Impact of plasma exposure on organic low-k materials. E. Smirnov1,2, A. K. Ferchichi1, C. Huffman1, M. R. Baklanov1. 1. IMEC vzw, Heverlee, Belgium, 2. Moscow Institute of Electronic Technology, Moscow, Russia

15.40

O2-06

Application of Langmuir probe technique in depositing plasmas for monitoring of etch process robustness and for end-point detection. A.V. Miakonkikh, K.V. Rudenko. Institute of Physics and Technology of RAS , Moscow, Russia.

Auditorium A

Session 13. Quantum Informatics III

Session Chairman: A. Tsukanov, Institute of Physics and Technology, RAS, Russia

14.00

qL-05

INVITED: Quantum Measurement of Open Systems. L. Fedichkin. Michigan State University, East Lansing,  USA

14.30

q2-06

Quantum Entanglement and its Observation at Measurement of Magnetic Succeptibility and in Multiple Quantum NMR Experiments. E.B. Fel’dman. Institute of Problems of Chemical Physics of Russian Academy of Sciences, Chernogolovka, Moscow Region

14.50

q2-07

The qubit states decoherence in antiferromagnet-based nuclear spin model of quantum register. A.A. Kokin1, V.A. Kokin2. 1. Institute of Physics and Technology of RAS , Moscow, Russia 2. Institute of Radioengineering and Electronics of RAS,  Moscow Russia

15.10

q2-08

Quantum Double Helix. A.Yu. Okulov. General Physics Institute of Russian Academy of Sciences, Moscow, Russia

15.30

q2-09

Time-optimal control of quantum dynamics of a quadrupole nucleus by NMR techniques. V.P. Shauro, V.E. Zobov. L.V.Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russia

15.50

q2-10

Resonant dipole-dipole interaction of a few cold Rydberg atoms in a magneto-optical trap. D.B. Tretyakov1, I.I. Beterov1, V.M. Entin1, I.I. Ryabtsev1, P.L. Chapovsky2 1. Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia, 2. Institute of Automation and Electrometry SB RAS, Novosibirsk, Russia

Auditorium B

Session 14. Simulation and Modeling II

Session Chairman: Tariel Makhviladze, Institute of Physics &Technology RAS,  Russia

14.00

O2-07

Mathematical modeling of a fast neutrals beam source neutralization channel. A.V. Degtyarev, V.P. Kudrya, Yu.P. Maishev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

14.20

O2-08

TCAD technique to simulate total dose effects in SOI MOSFETs. K. Petrosjanc, I. Kharitonov, E. Orekhov. Moscow State Institute of Electronics and Mathematics (Technical University), Moscow, Russia

14.40

O2-09

Optimization of near-surficial annealing for decreasing of depth of p-n-junction in semiconductor heterostructure. E.L. Pankratov. The Mathematical Department, Nizhny Novgorod State University of Architecture and Civil Engineering,, Nizhny Novgorod, Russia

15.00

O2-10

Research of current injection process in to the substrate during digital gate switching. T. Krupkina, D. Rodionov. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia

15.20

O2-11

Extrinsic Compact MOSFET Model with Correct Account of Positive Differential Conductivity after Saturation. V.O. Turin1, A.V. Sedov1, G.I. Zebrev2, B. Iniguez3,M.S. Shur4 1. Orel State Technical University, Orel, Russia,  2. National Research Nuclear University “MEPHI”, Moscow, Russia, 3. Rovira i Virgili University, Tarragona, Spain, 4. Rensselaer Polytechnic Institute, Troy, NY, USA

15.40

O2-12

Informational charge readout dynamics and non-linearity of photosignal characteristics of active pixels in CMOS image sensors. A.V. Verhovtseva, V.A. Gergel’, V.A. Zimoglyad. LLC RPC «SensorIS», Moscow, Russia

16.10 Coffee break

16.30 Entresol. POSTER SESSION I

16.30. Bottom hall. EXHIBITION

17.00. Conference Hall. Presentations of Hi-Tech Companies

17.00

S-05

Surface Metrology measurements; from nanometer to millimeter scale. P. Markus. Veeco Instruments Inc., USA

17.30

S-06

Advances in Cryofree Ultra-Low-Temperatures and integrated high magnetic fields. S. Mitchinson. Oxford Instruments Nanosciences Ltd., UK

19.00 Dinner 

Thursday, October 8th 2009

08.15 Breakfast

Conference hall

Session 15. Nanostructures Fabrication Techniques

Session Chairman: Anatoly Vyatkin, Institute of Microelectronics Technologies, RAS, Russia

09.00

О3-01

Nucleation and growth of Ge nanoislands on pit-patterned Si substrates. J.V. Smagina1, P.L. Novikov1, A.S. Deryabin1, E.E. Rodyakina, D.A. Nasimov1, B.I. Fomin1, V.A. Zinovyev1, A.V. Dvurechenskii1,2 . 1. Institute of Semiconductor Physics  SB RA , Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia.

09.20

O3-02

Nanoscale Si/SiO2 superlattices produced by plasma-chemical technology. S.A. Arzhannikova1,2, M.D. Efremov1,2, A.Kh. Antonenko1,2, V.A. Volodin1,2, G.N. Kamaev1,2, D.V. Marin1,2, S.A. Kochubei1, A.A. Voschenkov1 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia

09.40

O3-03

Impurity activation and nanocrystals formation using excimer lasers. M.D. Efremov1,2, S.A. Arzhannikova1,2, V.A. Volodin1,2, G.N. Kamaev1,2, S.A. Kochubei1, I.G. Neizvestny1. 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia

10.00

O3-04

Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. V.A. Volodin1,2, T.T. Korchagina1, G.N. Kamaev1, A.H. Antonenko1, J. Koch3, B.N. Chichkov3. 1. Institute of Semiconductor Physics, Russian Academy of Sciences, , Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia. 3. Laser Zentrum Hannover, Hannover, Germany

10.20

O3-05

Optical diagnostics of GaAs nanoheterostructures growth processes. I.P. Kazakov, E.V. Glazyrin, V.I. Tsekhosh. P.N. Lebedev Physical Institute of Russian Academy of Sciences, Moscow, Russia

10.40

O3-06

Low voltage micro lens ion beam column for nano-patterning with resolution of 1.5?2 nm. Numerical simulation and prospects. V.A. Zhukov1, S. Kalbitzer2, A. I. Titov3 1. Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia,  2. Ion Beam Technology, D-69121 Heidelberg, Germany, 3. St. Petersburg State Technical University, St. Petersburg, Russia

Auditorium A

Session 16. Quantum Informatics IV

Session Chairman: Yu.I.Bogdanov, Institute of Physics and Technology, RAS, Russia

09.00

q3-01

Quantum computer without uncontrollable Coulomb interaction among space-based qubits. S. Filippov, V. VyurkovInstitute of Physics and Technology, RAS, Moscow, Russia

09.20

q3-02

Quantum information transfer protocol via optimized single-electron transport in semiconductor nanostructure. A.V. Tsukanov. Institute of Physics and Technology, RAS, Moscow, Russia

09.40

q3-03

Outlook for the application of Ge/Si quantum dots in quantum calculations. A. Zinovieva1, A. Nenashev1, A. Dvurechenskii1, A.I. Nikiforov1,  A. Lyubin1, L. Kulik2. 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Institute of Chemical Kinetics and Combustion, Novosibirsk, Russian Academy of Sciences  Russia

10.00

q3-04

The quantum dynamics of two coupled large spins. V.E. Zobov. L.V. Kirensky Institute of Physics, SB Russian Academy of Sciences,Krasnoyarsk, Russia

10.20

q3-05

Can entanglement fluctuate? M. A. Yurishchev. Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Russia

Auditorium B

Session 17. Simulation and Modeling III

Session Chairman: Igor Abramov, Belarusian State University of Informatics & Radioelectronics, Belarus

9.00

O3-07

The influence of the suboxide layer structure on equivalent oxide thickness in nanoscale MIS-structure. N.A. Zaitsev, G.Ya Krasnikov, Matyushkin I.V. Micron Corp., Moscow, Zelenograd, Russia

9.20

O3-08

Semi-analytical model of a field-effect transistor with an ultra-thin channel. A. Khomyakov, V. Vyurkov. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

9.40

O3-09

Impact of channel inhomogeneities on characteristics of a quantum field-effect transistor. V. Vyurkov, I. Semenikhin, V. Lukichev, A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

10.00

O3-10

Bulk and Nanoribbon Graphene Field-Effect Transistor Modeling. G.I. Zebrev1, E.A. Zotkin1, А. Tselykovskiy1, E.V. Melnik1, V.O. Turin2 . 1. Micro- and Nanoelectronics Department, National Research Nuclear University “MEPHI”, Moscow, Russia, 2. Orel State Technical University, Orel, Russia

10.20

O3-11

Electron optical spin polarization in broken-gap heterostructures. A. Zakharova1, K. A. Chao2, I. Semenikhin1. 1. Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia,  2. Department of Physics, Lund University, Lund, Sweden, and Department of Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden

11.00 Coffee break 

Conference hall

Session 18. Magnetic Micro- and Nanostructures

Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS,  Russia

11.30

O3-12

High-temperature magnetization and Mossbauer spectra of nanoparticles in a weak magnetic field. M. A. Chuev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia.

11.50

O3-13

Mossbauer study of nanomagnetics. V.I. Bachurin1, I.N. Zakharova1, M.A. Shipilin2, A.M. Shipilin3 . 1. Yaroslavl State Technical University, Yaroslavl, Russia, 2. P.G.Demidov Yaroslavl State University, Yaroslavl, Russia, 3. M.V. Lomonosov Moscow State University, Moscow, Russia

12.10

O3-14

Ferromagnetic resonance and magnetoelastic demodulation in giant magnetostriction TbCo2/FeCo nanostructured thin film. A. Klimov1,2, Yu. Ignatov2, S. Nikitov2, N. Tiercelin1, V. Preobrazhensky1,3, P. Pernod1. 1. LEMAC–IEMN CNRS, Ecole Centrale de Lille, France 2. Kotel’nikov Institute of Radioengineering and Electronics (IRE RAS),Moscow, Russia 3. Wave Research Center, A.M. Prokhorov General Physics Institute RAS, Moscow, Russia

12.30

O3-15

Odd-even effects in magnetic nanostructures. V.V. Kostyuchenko. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl, Russia

12.50

O3-16

Magnetoresistance of multilayer ferromagnetic nanoparticles. S.N. Vdovichev, A.A. Fraerman, B.A. Gribkov, S.A. Gusev, A.Yu. Klimov, V.L. Mironov, V.V. Rogov. Institute for Physics of Microstructures, Russian Academy of Science, Nizhniy Novgorod, Russia

Auditorium A

Session 19. Quantum Informatics V

Session Chairman: Yuri Ozhigov, M.V.Lomonosov Moscow State University, Russia

11.30

q3-06

Quantum cryptography system using phase-time coding and resistant to PNS attack. D.A. Kronberg1 , S.N. Molotkov1,2,3 1. Faculty of Computational Mathematics and Cybernetics, Moscow State University, Moscow, Russia 2. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia. 3. Academy of Cryptography of the Russian Federation, Moscow, Russia

11.50

q3-07

Entanglement measure for multipartite pure states and its numerical calculation. A. Yu. Chernyavskiy. Institute of Physics & Technology of RAS (FTIAN), Moscow, Russia

12.10

q3-08

Quantum Computing with Collective Ensembles of Multilevel Systems. E. Brion, K. Molmer, and  M. Saffman. Laboratoire Aime Cotton (CNRS), Orsay, France

12.30

q3-09

Spin-1/2 systems with simple two- and three-dimensional geometrical configurations: state transfer and entanglement between different nodes. S.I. Doronin, E.B. Fel’dman and A.I. Zenchuk  Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow reg., Russia

12.50

q3-10

Flux-qubit and the law of angular momentum conservation. A.V. Nikulov. Institute of Microelectronics Technology, Russian Academy of Sciences,Chernogolovka, Moscow District, Russia.

Auditorium B

Session 20. Micro- and Nanostructures Characterization I

Session Chairman: Eduard Rau, Moscow State University, Moscow, Russia

11.30

O3-17

SEM Probe Defocusing Method of Measurement of Linear Sizes of Nanorelief Elements. M.N. Filippov1, Yu.A. Novikov2, A.V. Rakov3, P.A. Todua3. 1. N.S. Kurnakov General and Inorganic Chemistry Institute of the Russian Academy of Sciences, Moscow, Russia, 2. A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia. 3. Center for Surface and Vacuum Research, Moscow, Russia

11.50

O3-18

SEM Relief Structure Images with Trapezoid Profile and Big Inclination Angle of Side Walls in Back Scattered Electrons. M.N. Filippov1, Yu.A. Novikov2, A.V. Rakov3, P.A. Todua3. 1. N.S. Kurnakov General and Inorganic Chemistry Institute of the Russian Academy of Sciences, Moscow, Russia, 2. A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia. 3. Center for Surface and Vacuum Research, Moscow, Russia

12.10

O3-19

Combined electron-beam method of the diagnostic of microelectronic structures in scanning electron microscopy. F.A. Lukyanov1 , N.A. Orlikovsky2 , E.I. Rau3 , R.A. Sennov3. 1. Moscow State University, Moscow, Russia 2. Institute of Physic and Technology RAS, Moscow, Russia. 3. Institute of Microelectronics Technology RAS, Chernogolovka, Moscow Region, Russia

12.30

O3-20

Problems of AFM-investigations of open sandwich MIM-structures. E.S. Gorlachev, V.M. Mordvintsev, V.L. Levin. Yaroslavl Branch of the Institute of Physics and Technology RAS, Yaroslavl, Russia

12.50

O3-21

Correct measurements of capacity using atomic force microscope. A.A. Chouprik, A.S. Baturin. Moscow Institute of Physics and Technology, Dolgoprudny, Russia

13.20 Lunch

Conference hall

Session 21. Plasma Physics and Technologies

Session Chairman: Konstantin Rudenko, Institute of Physics &Technology RAS,  Russia

14.20

L3-01

INVITED: Problems of nano-sized and high aspect ratio features plasma etching. V. Lukichev1, K. Rudenko1, A. Orlikovsky1, V. Yunkin21. Institute of Physics & Technology (FTIAN) 2. Institute of Microelectronics Technology,Russian Academy of Sciences, Russia

14.50

O3-22

Modeling of plasma reactive ion etching of ultra high aspect ratio Si trenches. I.I.Amirov1, A.S.Shumilov1, A.N.Kupriynov1, V.F.Lukichev2 . 1. Institute RAS  Yaroslavl branch of the Institute of Physics & Technology RAS, Yaroslavl, Russia, 2. Institute of Physics & Technology (FTIAN), Russian Academy of Sciences, Moscow, Russia

15.10

O3-23

Plasma parameters and active particles kinetics in HBr dc glow discharges. A. Smirnov1,2, A. Efremov1, V. Svettsov1, A. Islyaykin2. 1. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia, 2. Mikron JSC, Zelenograd, Moscow, Russia

15.30

O3-24

Mechanisms of film deposition from BCl3-based plasma during dry etching. D. Shamiryan1 , A.M. Efremov2 , V. Serlenga3 , M.R. Baklanov1, W. Boullart1. 1. IMEC, Leuven, Belgium 2. Ivanovo State University of Chemistry and Technology, Ivanovo, Russia 3. Instituto Universitario di Studi Superiori, Pavia, Italy

15.50

O3-25

Excitation Mechanism of the B+ Emission Line at 345.1 nm in Low-Temperature Plasma. V.P. Kudrya. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

Auditorium A

Session 22. Quantum Informatics VI

Session Chairman: Yuri Ozhigov, M.V.Lomonosov Moscow State University, Russia

14.20

q3-11

Implementation of the quantum order-finding algorithm by adiabatic evolution of two qubits. A.S. Ermilov, V.E. Zobov. L. V. Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, 660036, Krasnoyarsk, Russia

14.40

q3-12

NMR Saturation and Entanglement in Solids. M. Kutcherov. Siberian Federal University, Krasnoyarsk, Russia

15.00

q3-13

Quantum Scattering on Dypole Potential in Adiabatic Approximation. K.S. Arakelov. M.V.Lomonosov Moscow State University, Russia

15.20

16.20

Round Table Discussion: Quantum Systems in Computer Simulation

Auditorium B

Session 23. Micro- and Nanostructures Characterization II

Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS,  Russia

14.20

O3-26

De-processing technologies for modern VLSI based on grazing incident ion beams. A.F. Vyatkin. Institute of Microelectronics Technologies, Russian Academy of Sciences, Chernogolovka, Russia

14.40

O3-27

Development of computer methods for multi nano-layer parameters measurements by X-Ray reflectometry. N.N. Gerasimenko1, D.A. Kartashov2, A.G. Turyansky3 . 1. Moscow Institute of Electronic Technology, Moscow, Zelenograd, Russia, 2. JSC Mikron, Moscow, Zelenograd, Russia, 3.LPI, Moscow, Russia

15.00

O3-28

Experimental scheme for observation of anomalous Kossel effect in semiconductor structures. P.G. Medvedev, M.A. Chuev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

15.20

O3-29

Structural Investigation of Magnetic Digital Alloys. I.A. Subbotin1, M.A. Chuev2, V.V. Kvardakov1, I.A. Likhachev1, E.M. Pashaev1. 1. Russian Research Center “Kurchatov Institute”, Moscow, Russia. 2. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

15.40

O3-30

Spectroscopic and scanning ellipsometry for investigation of surfaces, thin films and nanolayers. V. Tolmachev1, T. Zvonareva1, L. Portzel1, V. Kudoyarova1, T. Perova2, V. Shvets3, S. Rykhlitskii3 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia 2. Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland, 3. Semiconductor Physics Institute SB RAS, Novosibirsk, Russia

16.00

O3-31

Temperature of one-side polished silicon wafer at different position relatively incoherent radiance source. V.I. Rudakov, V.V. Ovcharov, V.P. Prigara. Yaroslavl Branch of Institute of Physics and Technology RAS

16.30 Coffee break

16.45 Entresol. POSTER SESSION II

Bottom hall. EXHIBITION

18.45. Conference Hall. CLOSING CONFERENCE REMARKS
А.А. Orlikovsky, Chair of Organizing Committee ICMNE-2009,
Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

19.30 BANQUET

Friday, October 9th, 2009

09.00 Breakfast

10.00  DEPARTURE

Устные доклады | Стендовые доклады

 

ICMNE-2007 AND SYMPOSIUM QI-2007 SCIENTIFIC PROGRAM

(Final Edition)
(Posters)

Download files:
ICMNE-2007 Oral Presentations
ICMNE-2007 Posters
ICMNE-2007 Delayed Posters
QI-2007 Oral Presentations

Monday, October 1st , 2007
9.00 — …
Registration & Accommodation
13.00 — 14.00
Lunch
Conference hall
Special Session. Presentations of Hi-Tech Companies.
 
16.00
S1-1
NANOFABS – basic systems for new developments in the field of nanoelectronics & micro-, nanomechanics. V.A. Bykov, V.V. Kotov, V.V. Polyakov, V. Atepalikhin. NT-MDT Company, Moscow , Russia .
16.30
S1-2
The future of nano technology based on electron microscopy. Uwe Schubert. Nano Technology Systems Division Carl Zeiss SMT AG
17.00
S1-3
The inspection of SEM into the third dimension. Peter Gnauck. Nano Technology Systems Division Carl Zeiss SMT AG
17.30
S1-4
Will be announced later
18.00
Welcome Party
19.00
Dinner
 
Tuesday, October 2nd , 2007
 
Conference hall
8.00
Breakfast
8.40
Welcome remarks

E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow
K.A. Valiev, Program Chair, IPT RAS, Moscow

Plenary Session
Session Chairman: Alexander Orlikovsky, 
Institute of Physics &Technology RAS, Russia
8.50
L1-01
KEYNOTE: Materials and MOS device architectures for the sub-32 nm node. Th. Skotnicki and S. Monfray. ST Microelectronics, Crolles , France
9.30
L1-02
INVITED: High-k dielectric films for advanced microelectronics. A. Toriumi. University of Tokyo , Japan
10.10
L1-03
INVITED: Low-k dielectrics for microelectronics. M. Baklanov . IMEC, Leuven , Belgium .
10.40
L1-04
INVITED: Bottom-up interconnect formation possibility using supercritical fluids: beyond scalability. E.   Kondoh. University of Yamanashi, Japan.
11.10
L1-05
INVITED: Physics and Applications of Graphene. K.S. Novoselov 1 , S.V. Morozov 2 , A.K. Geim. 1. School of Physics and Astronomy, University of Manchester , Manchester , UK 2. Institute for Microelectronics Technology, Chernogolovka , Russia
11.40 — 12.00
Coffee break. Winter garden
Conference Hall
Session 1. Sub-100 nm Lithography
Session Chairman: Kamil Valiev, 
Institute of Physics &Technology RAS, Russia
12.00
O1-01
Manufacturing and investigation of objective lens for ultrahigh resolution lithography facilities. N. Chkhalo, E. Kluenkov, A. Pestov, D. Raskin, N. Salashchenko. Institute for Physics of Microstructures, RAS, Nizhny Novgorod , Russia
12.20
O1-02
Multilayer Zr/Si filters for EUV lithography and for radiation source metrology. M.S. Bibishkin 1 , N.I. Chkhalo 1 , S.A.  Gusev 1 , E.B. Kluenkov 1 , A.Ja. Lopatin 1 , V.I. Luchin 1 , A.E. Pestov 1 , N.N. Salashchenko 1 , L.A.  Shmaenok 2 , N.N. Tsybin 1 . 1.  Institute for Physics of Microstructures, RAS, Nizhny Novgorod , Russia . 2.   PhysTeX, Vaals , Netherlands
12.40
O1-03
Alternating Phase Shift Mask design problem statement. M. Myachin 1 , N. Savinski 2 , G. Krasnikov , 3 N. Shelepin 3 , O. Gutshin 3 , I.  Sirtsov 3 , A. Sutyagin 3 1.  Yaroslavl State University , Yaroslavl , Russia 2.   Institute of Physics &Technology, RAS, Yaroslavl Branch , Russia , 3. JSC Mikron , Zelenograd, Moscow
13.00
O1-04
Modification of nanolithography method using optical tweezers for planar nanostructures fabrication. I.V. Soboleva, A.G. Zhdanov, A.A. Fedyanin. Faculty of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia
Auditorium A
Session 2. Simulation and Modeling I
Session Chairman: Tariel Makhviladze, 
Institute of Physics &Technology RAS, Russia
12.00
L1-06
INVITED: New Results of Modeling in Micro- and Nanoelectronics. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 2 . 1. Institute for Problems in Mechanics, RAS, Moscow , Russia . 2.  Institute of Physics and Technology, RAS, Moscow , Russia
12.30
O1-05
The process window TCAD methodology for DFM in the field of deep submicron nodes and nanoscale transistors. Y. Chaplygin, M. Korolev, T. Krupkina. Moscow Institute of Electronic Engineering, Moscow , Russia
12.50
O1-06
The TCAD estimation of electrical stability for different layout SOI MOSFETs. T. Krupkina. Moscow Institute of Electronic Engineering, Moscow , Russia
13.10
O1-07
Technology modelling of microsystem technics devices. A. Kozlov, D. Rodionov. Moscow Institute of Electronic Technology, Moscow , Zelenograd , Russia
Auditorium B
Session 3. Defects and Impurities in Semiconductors
Session Chairman: Eugene Yakimov, 
Institute of Microelectronics Technology , Russia
12.00
O1-08
Spatial distribution of electrically active defects in strained-Si / SiGe / Si heterostructures. N. Yarykin 1 , E. Yakimov 1 , G. Rozgonyi 2 . 1.  Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia . 2. Department of Materials Science and Engineering, North Carolina State University , Raleigh , NC , USA
12.20
O1-09
Stable silicon resistors at 20-160 ° C due to divacancy involving in high purity neutron doped Si. G.N. Kamaev, M.D. Efremov, V.A. Stuchinsky, B.I. Mihailov, S.G. Kurkin. Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia
12.40
O1-10
Application of SQUID for detection of a small quantity of spin impurity in semiconductors. A.I.   Golovashkin 1 , A.L.   Karuzskiy 1 , A.A.   Orlikovsky 2 , V.V.   Privezentsev 2 , A.M.   Tshovrebov 1 1. Lebedev Physical Institute, Russian Academy of Science , Moscow , Russia ; 2. Institute of Physics & Technology, Russian Academy of Science , Moscow Russia
13.00
O1-11
Determination of isotope ratio of boron in B-alloyed crystals of diamond by SIMS. A.N. Pustovit 1 , E.A. Ekimov 2 , I.I. Vlasov 3 , A.F. Vyatkin 1 . 1.  Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia . 2.  Vereshchagin Institute for High Pressure Physics, RAS, Troitsk, Moscow region, Russia . 3.  General Physics Institute, RAS, Moscow , Russia
13.30 — 14.30
Lunch
Conference Hall
Session 4. Nanodevices and Nanostructures I
Session Chairman: Oleg Pchelyakov, Institute of Semiconductor Physics SB RAS, Russia
14.30
O1-12
From molecularly to atomically thin solid nanoshells: fabrication, properties and applications. V.Ya. Prinz, V.A. Seleznev, S.V. Golod. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
14.50
O1-13
Fabrication of nanostructures for stamps production used in nanoimprint lithography by means of focused ion beam technique. A.F. Vyatkin 1 , Yu.   A. Agafonov 1 , V.I. Zinenko 1 , Yu. M. Lunin 1 , B.G. Freikman 1 , V.I. Balykin 2 , P.N. Melent’ev 2 1. Institute of Microelectronics Technology, RAS, Moscow district, Chernogolovka, Russia . 2. .Institute of spectroscopy, RAS, Moscow district, Troitsk
15.10
O1-14
Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon. V. Sverdlov 1,2 , H. Kosina 1 , and S. Selberherr 1 . 1. Institute for Microelectronics, TU Wien, Wien , Austria . 2. V.A. Fock Institute of Physics, State University of St.Petersburg , St.Petersburg , Russia
15.30
O1-15
Graphene Nanoelectronics: Device Electrostatics and Kinetics. G. I. Zebrev. Department of Microelectronics, Moscow Engineering Physics Institute, Russia
15.50
O1-16
Quantum Conductivity of Linear Chain Carbon. M.B. Guseva, V.G.  Babaev , N.D.  Novikov, V.V. Khvostov. Department of Physics, Moscow State University , Moscow , Russia
Auditorium A
Session 5. MEMS & Sensors
Session Chairman: Vladimir Lukichev, 
Institute of Physics &Technology RAS, Russia
14.30
O1-17
Divergence Instability o f a Extensible Microplate Subjected to Nonlinear Electrostatic Pressure. Gh.   Rezazadeh 1 , H.   Yagubizade 1 , Y.   Alizadeh 2 1. Mech. Eng. Dept., Urmia University , Urmia , Iran . 2. Mech. Eng. Dept., Arak Azad University , Arak , Iran
14.50
O1-18
Simulation, formation and dynamic characteristics of e lectrostatically actuated switches . A.V.   Postnikov 1 , I.I.   Amirov 1 , V.V.   Naumov 1 , V.A.   Kalnov 2 . 1. Institute of microelectronics, Russian Academy of Science, Yaroslavl, Russia 2. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
15.10
O1-19
High energy microelecromechanical oscillator based on the electrostatic microactuator. I. Baginsky, E. Kostsov , V. Sobolev. Institute of Automation and Electrometry, SB RAS, Novosibirsk , Russia
15.30
O1-20
Application of single crystals of lithium niobate with bidomain structure for creation actuators of micro and nano moving ranges. V.Antipov, A.Bykov, M.Malinkovich 1 , Y.Parkhomenko. Moscow Institute Of Steel And Alloys (Technological University), Moscow , Russia
15.50
O1-21
Electromechanical energy conversion in the nanometer gaps. E.G.   Kostsov. Institute of Automation and Electrometry, SB RAS, Novosibirsk , Russia
16.10
O1-22

Flicker-noise gas sensors as basis elements of microanalytical systems. M. Makoviychuk. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia

Auditorium B
Session 6. Photonics and Optoelectronics
Session Chairman: Sergey Nikitov, 
Institute of Radioengineering and Electronics RAS, Russia
14.30
O1-23
Distant- and interference-spatial spectroscopy of evanescent waves . M.Yu. Barabanenkov*, Yu.N.  Barabanenkov , S.A.  Nikitov. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia . Institute of Radioengineering and Electronics, RAS, Moscow , Russia
14.50
O1-24
Polarization switching dynamics of nonlinear ferroelectric photonic crystals. N.E. Sherstyuk 1 , E.D. Mishina 1 , V.M. Muhortov 2 . 1. Moscow State Institute of Radioenginering, Electronics and Automation, Moscow , Russia ; 2. South Scientific Center of Russian Academy of Science , Rostov-on-Don , Russia
15.10
O1-25
Magnetoplasmonic effects in two-dimensional photonic crystals. A.G. Zhdanov 1 , T.V. Dolgova 1 , A.A. Fedyanin 1 , A.V. Baryshev 2 , A.B. Khanikaev 2 , H. Uchida 2 , and M. Inoue 2 . 1.  Dept. of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia 2. Dept. of Electrical and Electronic Eng. , Toyohashi University of Technology , Toyohashi , Japan
15.30
O1-26
Application of Ge- Si Nanostructures in Photovoltaic. O.P. Pchelyakov. Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia
15.50
O1-27
Red Channel Frequency-Contrast Characteristics Correction Method of the Matrix Photoreceiver Based on Simplified Design of the Photocells with Deep Color Separation. I.V. Vanyushin 2 , A.V. Verhovtseva 2 , A.V. Gergel’ 1 , N.M. Gorshkova 1 , V.A. Zimoglyad 2 , Yu.I. Tishin 2 . 1.  Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia . 2.   “Unique IC`s”, LLC, Moscow, Russia
16.10
O1-28
SILAR Preparation of Charge Selective Contacts for Future Photovoltaics. S. Gavrilov 1 , A. Zheleznyakova 1 , Th. Dittrich 2 , E. Poltoratsky 3 , A. Belogorokhov 4 1. Moscow Institute of Electronic Technology, Moscow , Russia , 2. Hahn-Meitner Institut , Berlin , Germany , 3. State Research Institute of Physical Problems, Moscow , Russia , 4. Institute of Rare Metals, Moscow , Russia
16.30 — 17.00
Coffee break. Winter garden
Conference Hall
Session 7. Devices and ICs
Session Chairman: Andrey Vasiliev, 
FSU Enterprise “Pulsar”, Russia
17.00
O1-29
Physical Limitations of Reliability of Solid-State Microwave Elements at Micro- and Nanoelectronics. A. Vasiliev, V. Sinkevitch. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
17.20
O1-30
Sign magnetosensitivity of dual-collector lateral bipolar magnetotransistor. R.D. T ikhonov. SMC «Technological Centre» MIEE, Moscow — Zelenograd , Russia
17.40
O1-31
High speed integrated switchboards based on connected quantum wells. B. Konoplev 1,2 , E. Ryndin 2 . 1. Taganrog Institute of Technology — Southern Federal University , Taganrog , Russia . 2. Southern Scientific Center of Russian Academy of Sciences , Rostov-on-Don , Russia
18.00
O1-32
Self-heating influence on device interconnect temperature in high-voltage SOI MOSFET. А . Krasukov, E. Artamonova. Moscow State Insitute of Electronic Engineering, Moscow , Russia
18.20
O1-33
Microwave GaN Transistors: Achievements and Prospects. A. Vasiliev, A. Dorofeev, Yu. Kolkovsky, V. Minnebaev. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
18.40
O1-34
Nanoionic supercapacitors for 0.5 V nanoelectronics. A.L. Despotuli, A.V. Andreeva, V.V. Aristov. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
Auditorium A
Session 8. Thin Films
Session Chairman: Mikhail Baklanov, 
IMEC, Leuven , Belgium
17.00
O1-35
Electric Pulse Induced Resistance Change in Oxide Thin Film Heterostructures. A. Ignatiev, N.J. Wu , X. Chen, C. Papagianni, Y. B. Nian, J. Strozier. Texas Center for Advanced Materials, University of Houston , Houston , USA
17.20
O1-36
MBE growth of Ge-Si strained structures with the step buffer for two-dimensional electron gas. L.V. Sokolov, Yu.B. Bolkhovitianov, and A.S. Derjabin. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
17.40
O1-37
Development of MBE technology of III-V semiconductor heterostructures for ultra-high frequency devices. K. Zhuravlev, A. Toropov, V. Mansurov. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
18.00
O1-38
Surprising phase transformation of a-Si:H films under femtosecond laser impact. V.A. Volodin 1,2 , M.D. Efremov 1 , G.A. Kachurin 1 , S.A.  Kochubei 1 , A.G. Cherkov 1 , M. Deutschmann 3 , N. Baersch 3 . 1 .  Institute of Semiconductor P hysics SB RAS , Novosibirsk , Russi a . 2 .  Novosibirsk State University , Novosibirsk , Russia . 3. Laser Zentrum Hannover, Hannover, Germany
18.20
O1-39
Deposition of ultrathin magnetic films by magnetron sputtering with RF bias on substrate. V.V. Naumov, V.F. Bochkarev, Ed.Yu. Buchin. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
18.40
O1-40
Emitting prop er ties of cobalt thin films reduced from oxide by proton irradiation. B. Gurovich, K. Prikhodko , A. Domantovsky, K. Maslakov. Russian Research Center «Kurchatov Institute», Moscow , Russia
Auditorium B
Session 9. Superconducting Structures
Session Chairman: Mikhail Kupriyanov, 
Institute of Nuclear Physics , Moscow State University , Russia
17.00
O1-41
Josephson effect in laterally inhomogeneous structures with ferromagnetic materials. T. Karminskaya 1 , M. Kupriyanov 1 , N.Pugach 2 . Institute of Nuclear Physics , Moscow State University , Moscow , Russia 2. Physics Department of Moscow State University , Moscow , Russia
17.20
O1-42
Ferromagnetic nanodots as source of magnetic field: control transport properties of Josephson junctions and diluted magnetic semiconductor. S.N. Vdovichev. Institute for Physics of Microstructures, RAS, Nizhniy Novgorod , Russia
17.40
O1-43
High Linearity Josephson Array Structures. V.K. Kornev 1 , I.I. Soloviev 1 , N.V. Klenov 1 , and O. A. Mukhanov 2 . 1. Department of Physics, M.V.   Moscow State University , Moscow , Russia . 2. HYPRES, Inc., Elmsford , NY , USA
18.00
O1-44
Full synchronization of arrays of high-Tc Josephson junctions. A.M. Klushin 1,2 , M. He 1,3 , M.Yu. Levitchev 2 , V.A. Markelov 2 , V.V. Kurin 2 and N. Klein 1 . 1. Institute for Bio- and Nanosystems and CNI-Centre of Nanoelectronic Systems for Information Technology Forschungszentrum Julich GmbH, Julich , Germany . 2. Institure for physics of microstructures, RAS, Nizhny Novgorod, Russia . 3 Dept. of Electronics, Nankai Univ. , Tianjin , P. R. China
18.20
O1-45
Fluctuations of the thin diffusive metal film under the influence of microwave radiation. I. Devyatov, M. Kupriyanov, D. Goncharov. Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow , Russia
18.40
O1-46
Out-of-plane tilted Josephson junctions of bi-epitaxial YBa 2 Cu 3 O x thin films. J.E. Mozhaeva 1 , P.B. Mozhaev 1 , J. Bindslev Hansen 2 , C.S. Jacobsen 2 , I.K. Bdikin 3 ,
I.M. Kotelyanskii 4 , V.A. Luzanov 4 , S.G. Zybtsev 4 . 
1.   Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia . 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark . 3.  CICECO, University of Aveiro , Aveiro , Portugal . 4.  Institute of Radio Engineering
and Electronics, Russian Academy of Sciences , Moscow , Russia
19.00
Dinner
 
Wednesday, October 3rd 2007
8.15
Breakfast
8.50
Welcome remarks

K.A. Valiev. Institute of Physics and Technology, Russian Academy of Sciences.

Conference Hall
Plenary Session of SYMPOSIUM QI-2007
Chairman: Y. Ozhigov
9.00
Q-01
Coulomb blockade of anyons in quantum antidots. D.V.Averin. Department of Physics and Astronomy, Stony Brook University, SUNY, Stony Brook, NY, USA
9.30
Q-02
Reversible logic circuits as prototypes of prospective quantum computers, V. Semenov, J. Ren and D. Averin, Stony Brook University, Department of Physics and Astronomy, Stony Brook, NY
10.00
Q-03
Single-qubit operations in the double-donor structure driven by optical and voltage pulses A. V. Tsukanov . Institute of Physics and Technology, Russian Academy of Sciences
10.30
Coffee break
Conference Hall
Session 10. Nanodevices and Nanostructures II
Session Chairman: Alex Ignatiev, 
Texas Center for Advanced Materials, University of Houston , USA
10.50
L2-01
INVITED: New Trends in Development of Modern Silicon Nanoelectronics. I.G. Neizvestny. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
11.10
O2-01
SiGe heterostructures on insulator for CMOS transistors formed by interface mediated endotaxy. V.P. Popov 1 , I.E. Tyschenko 1 , A.G. Cherkov 1 , A.E. Klimov 1 , M. Volskow 2 . 1.  Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 2 .  Institute of Ion Beam Physics and Material Research, Dresden , Germany
11.30
O2-02
Interacting resonances and electron density redistribution in resonant- tunneling heterostructures. A. A. Gorbatsevich 1 , V. V. Kapaev 2 , M. N. Zhuravlev 1 1. Moscow State Institute of Electronic Technology ( Technical University ), Moscow , Russia . 2. P.N. Lebedev Physical Institute, Moscow , Russia
11.50
O2-03
Memory Effect in Dielectrics with Inc orporated Nanosize Clusters. A.E. Berdnikov, A.A. Popov, A.A. Mironenko, V.D. Chernomordick. Institute of Physics &Technology RAS, Yaroslavl Branch , Russia
12.10
O2-04
Work function engineering of Ni-Si metal gates on HfO 2 high-? gate dielectrics as probed with in-situ XPS. A.V. Zenkevich, Yu.Yu. Lebedinskii, Yu.A. Matveev and V.N. Nevolin. Moscow Engineering Physics Institute (state university), Russia
12.30
O2-05
Using heterostructures for nanoscaled electronic devices in Novosibirsk Institute of Semiconductor Physics. V.P. Popov, I.E. Tyschenko, A.V. Latyshev, V.A. Gaisler, I.G. Neizvestny, A.L. Aseev. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
Auditorium A
SYMPOSIUM QI-2007
Chairman: A. Tsukanov
11.00
Q-04
Non-demolishing measurements of an electron spin state via Fano resonance L. Gorelik 1 , V. Vyurkov 2 , and A. Orlikovsky 2 1. Chalmers University of Technology and Goteborg University, Goteborg, Sweden, 2. Institute of Physics and Technology, RAS, Moscow, Russia
11.20
Q-05
Relative coordinates of coherent electron pair. C. Usenko 1 , N. Cherkashyna 1 . National Taras Shevchenko University of Kyiv, Kyiv, Ukraine
11.40
Q-06
The Software for Quantum Mechanical Calculation of Electronic Structure of Molecules. A.G. Gasanov 1 , F.G. Pashaev 1 . 1. Baku State University, Baku, Azerbaijan
12.00
Q-07
Josephson-junction qubits N.V. Klenov, V.K. Kornev, N. G. Pugach, T.S. Rumyantseva. Department of Physics, Moscow State University, Moscow, Russia
12.20
Q-08
Simulation of Quantum Algorithms with high-level language. Mathematica. P.Nyman . International Center for mathematical Modeling in physics, Engineering and Cognitive science, MSI, Vaxjo University, Sweden
12.40
Q-09
Geometric information in eight dimensions vs. quantum information. V.I. Tarkhanov 1 , M.M. Nesterov 2 . 1. St. Petersburg State Polytechnic University, St. Petersburg, Russia. 2. St. Petersburg Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia
Auditorium B
Session 11. Magnetic Micro- and Nanostructures
Session Chairman: Mikhail Chuev, 
Institute of Physics &Technology RAS, Russia
11.00
O2-06
Non-equilibrium magnetism of nanoparticles revealed in ‘static’ and radiofrequency measurements. M.A. Chuev, N.P. Aksenova, P.G.   Medvedev. Institute of Physics and Technology, RAS, Moscow , Russia
11.20
O2-07
Peculiarities of the extraordinary Hall effect for planar arrays Fe nanoparticles embedded in an ultrathin Pt film. V.T. Volkov, V. I. Levashov, V. N. Matveev and V. A. Berezin. Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia
11.40
O2-08
Inhomogeneously magnetization of magnonic ferrite film measurement using magnetooptical Kerr effect. A. Klimov, S. Nikitov. Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia
12.00
O2-09
Finite size effects in antiferromagnetic multilayers. V.V. Kostyuchenko 1 , M.V. Kostyuchenko 2 . 1.  Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia 2.  Yaroslavl State Technical University , Yaroslavl , Russia
12.20
O2-10
Magnetoresistance of ferromagnetic nanoconstrictions in planar configuration. A.A. Bukharaev 1,2 , R.G. Gatiyatov 1 , P.A. Borodin 1 1.  Zavoisky Physical Technical Institute, Russian Academy of Sciences , Kazan , Russia . 2.  Kazan State University , Kazan , Russia
12.40
O2-11
Spin-flop effect in antiferromagnets induced by the spin-polarised current. H. Gomonay, V. Loktev. National Technical University «KPI», Kyiv, Ukraine
13.00
Lunch
Conference Hall
Session 12. Plasma Physics and Technologies I
Session Chairman: Dorel Toma, 
Tokyo Electron  U.S. Holding
14.00
L2-02
INVITED: Dual (multi-) frequency capacitive coupled plasma (DF CCP) as an effective tool for nanotechnology. A.T. Rakhimov. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University (SINP MSU), Moscow , Russia
14.30
O2-12
A plasma etch process for bulk finFET manufacturing. D. Shamiryan, A. Redolfi, W. Boullart. IMEC, Leuven , Belgium
14.50
O2-13
Nanoscale etching processes. A. Rubin, C. Welch. Oxford Instruments Plasma Technology, Bristol , UK
15.10
O2-14
Plasma parameters and active particles kinetics in Cl 2 and HCl dc glow discharges. A. Efremov , V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo , Russia
15.30
O2-15
Theoretical study of ionization processes in BF 3 plasmas. V.P. Kudrya. Institute of Physics and Technology, RAS, Moscow , Russia
15.50
O2-16
Investigation of plasma uniformity in processing chambers of plasma tools for microelectronics by computer-aided tomography. K. Rudenko , A. Fadeev, S. Averkin, M. Rudenko, I.  Tyurin, A. Rylov, and A. Orlikovsky. Institute of Physics and Technology, RAS, Moscow , Russia
Auditorium A
SYMPOSIUM QI-2007
Chairman: Y.Bogdanov
14.00
Q-10
Diffusion approximation of quantum dynamics. Y.I. Ozhigov Moscow State University, Moscow, Russia
14.30
Q-11
Numerical computations of molecular stationary states. B.K. Novosadov Moscow State University
14.50
Q-12
What Fundamentally New Properties Are Introduced by Special Relativity to Quantum Cryptography , D.Pomozov, S.Molotkov , Institute of physics and technology RAS
15.10
Q-13
EPR — experiments: analysis of Bell inequalities violation A. Kraklauer, New York, USA
15.30
Q-14
An investigation of the antiferromagnet-based NMR quantum register in inhomogeneous magnetic field , A. Kokin. Institute of Physics and Technology, RAS
15.50
Q-15
Will be announced later
Auditorium B
Session 13. Simulation and Modeling II
Session Chairman: Tariel Makhviladze, 
Institute of Physics &Technology RAS, Russia
14.00
O2-17
Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths . A. Burenkov, C. Kampen, J. Lorenz, and H. Ryssel. Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen , Germany
14.20
O2-18
All-quantum simulation of an ultra-small SOI MOSFET. V. Vyurkov 1 , I.  Semenikhin 1 , V. Lukichev 1 , A. Burenkov 2 , and A. Orlikovsky 1 . 1.  Institute of Physics and Technology, RAS, Moscow , Russia . 2.  Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen , Germany
14.40
O2-19
Modeling of non-stationary electron transport in semiconductor nanowires and carbon nanotubes. D.V. Pozdnyakov, A.V. Borzdov, V.M. Borzdov, F.F. Komarov. Belarus State University , Minsk , Belarus
15.00
O2-20
Simulation of metal and semiconductor single-electron 1D and 2D arrays. I.I. Abramov, A.L. Baranoff, A.M. Lavrinovich. Belarusian State University of Informatics and Radioelectronics, Minsk , Belarus
15.20
O2-21
Mathematical modeling of a GaAs integrated microwave limiter. G.Z. Garber. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
15.40
O2-22
A Comparison of Fitness Function Schedules for Multi-Objective Univariate Marginal Distribution Optimization of Mixed Analog-Digital Signal Circuits. L. Zinchenko , M. Radecker , F. Bisogno. Fraunhofer IAIS, Sankt Augustin, Germany
16.10
Coffee break
16.30 Entresol
POSTER SESSION I
Bottom hall.
Exhibition
19.00
Dinner
 
Thursday, October 4th 2007
8.15
Breakfast
Conference Hall
Session 14. Nanostructures Technologies I
Session Chairman: Anatoly Dvurechenskii, 
Institute of Semiconductor Physics SB RAS, Russia
9.00
L3-01
INVITED: Silicon based quantum dot nanostructures: Physics and Technology. A.V. Dvurechenskii. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
9.30
O3-01
Method of creation of monomolecular transistor with “overhanging” electrodes. I.V. Sapkov, E.S. Soldatov. Department of Physics, M.V. Lomonosov Moscow State University , Russia
9.50
O3-02
Nanocrystal floating gate produced by CVD and thermal processing. A.G. Novikau 1 , P.I. Gaiduk 1 , E.N. Pshenichnij 2 , O.Yu. Nalivajko 2 , V.S. Malishev 2 and V.I. Plebanovich 2 1 .  Belarusian State University , Minsk , Belarus , 2 .  RPC Integral, Minsk , Belarus
10.10
O3-03
The electroformed open sandwich-structures as elements for crossbar-nanoelectronics. V. Mordvintsev, S. Kudryavtsev V. Levin Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia
10.30
O3-04
Nanotechnology for fabricating full-epitaxial Nb-MgO-Nb tunnel junctions of sub-micron sizes. A. Chernych, G. Mikhailov, V. Vinnichenko. Institute of Microelectronics Technology & High Purity Materials, Russian Academy of Sciences , Chernogolovka, Moscow Region , Russia
Auditorium A
SYMPOSIUM QI-2007
Chairman: B. Novosadov
9.00
Q-16
Quantum computation and hidden variables. V.V. Aristov and A.V. Nikulov, Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
9.20
Q-17
Generation of entangled states in quasi-periodical ferroelectrics, S. Kulik. Moscow State University, Moscow, Russia
9.40
Q-18
Limitations on ion trap quantum computing scheme A. Burkov. Moscow State University, Moscow, Russia
10.00
Q-19
Has it been proved that a superconducting loop could be flux qubit? A.A. Burlakov, V.L. Gurtovoi, A.V. Nikulov and V.A. Tulin. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
10.20
Q-20

Thermal entanglement in a case of two spin temperatures M. Kutcherov Polytechnic Institute of Siberian Federal University

10.40
Q-21
Will be announced later
Auditorium B
Session 15. Simulation and Modeling III
Session Chairman: Igor Abramov, Belarusian State University of Informatics and Radioelectronics , Belarus
9.00
L3-02
INVITED: Focused ion beam source of a new type for micro- and nanoelectronics technologies. V.L. Varentsov. V.G.Khlopin Radium Institute, St. Petersburg , Russia
9.30
O3-05
New Approach in the Development of Low Noise Microwave Semiconductor Devices. N.V. Alkeev 1 , S.V. Averin 1 , V.E. Lyubchenko 1 , A.A. Dorofeev 2 1.  Institute of Radioengineering & Electronics, RAS , Fryazino, Moscow region, Russia . 2.  Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
9.50
O3-06
Two-band models of wave function formalism f о r resonant tunneling diodes. I.I. Abramov, I.A. Goncharenko, N.V. Kolomejtseva, A.A. Shilov. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
10.10
O3-07
The prediction of nanostructure properties on the base of porous silicon. D. Bilenko, O. Belobrovaya, E. Jarkova, E. Khasina, I. Mysenko, D. Terin. Saratov State University , Saratov , Russia
10.30
O3-08
Simulation of feature profile evolution during the cyclic etching/ passivation process of deep plasma Si etching by the cell-string hybrid method. A.S. Shumilov, I.I. Amirov. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
11.00
Coffee break
Conference Hall
Session 16. Nanostructures Technologies II
Session Chairman: Vitalii Aristov, 
Institute of Microelectronics Technology RAS, Russia
11.30
O3-09
Influence of growth temperature and double-side doping on structural and electro-physical characteristics of the Al x Ga 1-x As/In y Ga 1-x As/GaAs nanosystem. I.A. Subbotin * , G.B. Galiev ** , R.M. Imamov * , M.A. Chuev *** . * Shubnikov Institute of Crystallography, RAS, Moscow , Russia . ** Institute of Ultra-High-Frequency Semiconductor Electronics, RAS, Moscow , Russia . *** Institute of Physics and Technology, RAS, Moscow , Russia
11.50
O3-10
Model of diffusion limited aggregation for the effect of magnetic field on ion beam synthesis. G.G. Gumarov, V. Yu. Petukhov. Kazan Physical Technical Institute of Kazan Scientific Center, RAS, Kazan , Russia
12.10
O3-11
Heterogeneous melting and participation of it in different micro- and nanotechnology processes. A.A. Buzdugan, S.A. Gavrilov, D.G. Gromov, E.N. Redichev, I.S. Chulkov. Moscow Institute of Electronic Technology, Zelenograd , Russia
12.30
O3-12
Porous silicon the material for nano- and microstructurizations. V. Starkov. Institute of Microelectronics Tecnology, RAS, Chernogolovka , Russia
12.50
O3-13
The approach to formation of interconnections with the low dimension for damascene technology. D.G. Gromov a , E.N .Redichev a , A.A. Golishnikov b , A.A. Buzdugan a , I.S. Chulkov a , R.M. Ammosov c . a Moscow Institute of Electronic Technology ( Technical University ), Moscow , Zelenograd , Russia . b ”Technological Center” Research and Production Complex at MIET, Moscow , Zelenograd , Russia . c State Research Institute of Physical Problems, Moscow, Zelenograd, Russia
Auditorium A
SYMPOSIUM QI-2007
Chairman: A. Burkov
11.30
Q-22
Explicit Attack on the Key in Quantum Cryptography) Reaching the Theoretical Error Limit 11%, A.Timofeev, S.Molotkov, Moscow State University
11.50
Q-23
Hidden variables in Bell model and dynamical chaos, Y.Bogdanov , Institute of physics and technology, Moscow, Russia
12.10
Q-24
New Time-Phase Coding Method in Quantum Cryptography , A.Makkaveev, S.P.Kulik , S.Molotkov , Institute of physics and technology
12.30
Q-25
3D-vortex labyrinth trapping in the near field of a solid-state microchip laser. A.Yu. Okulov . P.N.Lebedev Physical Institute of Russian Academy of Sciences Leninsky prospect 53, 119991 Moscow, Russia
12.50
Q-26
Hidden time hypothesis and “no — protocol theorem”. P.V. Kurakin. Moscow Institute of Physics and Technology, Moscow, Russia
Auditorium B
Session 17. Micro- and Nanostructures Characterization I
Session Chairman: Mikhail Chuev, 
Institute of Physics &Technology RAS, Russia
11.30
O3-14
Nanorelief elements in reference measures for scanning electron microscopy. S.A.  Darznek 1 , M.N. Filippov 2 , V.B. Mityukhlyaev 1 , Yu.A. Novikov 3 , Yu.V. Ozerin 4 , A.V. Rakov 3 , P.A. Todua 1 . 1. Center for Surface and Vacuum Research, Moscow , Russia . 2. N.S. Kurnakov General and Inorganic Chemistry Institute, RAS , Moscow , Russia . 3. A.M. Prokhorov General Physics Institute, RAS , Moscow , Russia . 4. Mikron Corporation, Moscow , Russia
11.50
O3-15
Direct measurement of the linewidth of relief element on AFM in nanometer range. S.A. Darznek 1 , M.N. Filippov 2 , I.D. Lysov 1 , Yu.A. Novikov 3 , A.V. Rakov 3 , V.A. Sharonov 1 , P.A. Todua 1 . 1. Center for Surface and Vacuum Research, Moscow , Russia 2. N.S. Kurnakov General and Inorganic Chemistry Institute, RAS , Moscow , Russia . 3. A.M. Prokhorov General Physics Institute, RAS , Moscow , Russia
12.10
O3-16
Generalized dynamical theory of X-rays diffraction by curved perfect crystals. T. Chen. Moscow State Academy of Fine Chemical Technology, Moscow , Russia
12.30
O3-17
The special features of Al x Ga 1-x N \ GaN heterostructures. K.L. Enisherlova 1 , R.M. Imamov 2 , I.A. Subbotin 2 , T.F. Rusak 1 , E.M. Temper 1 . 1. Federal state unitary enterprise «Science &Production enterprise «Pulsar», Moscow , Russia 2.  Institute of Crystallography RAS, Moscow , Russia
12.50
O3-18
Characterization of Nanometer Structures for CMOS VLSIC Design Flow. D.Y. Adamov, Y.F. Adamov. LCC “Unique IC`s”, Moscow Russia
13.10
O3-19
Fundamental and applied aspects of flicker-noise spectroscopy. M. Makoviychuk. Institute of Physics and Technology of the RAS, Yaroslavl Branch, Yaroslavl , Russia
13.30
Lunch
Conference Hall
Session 18. Plasma Physics and Technologies II
Session Chairman: Dorel Toma, 
Tokyo Electron  U.S. Holding
14.20
L3-03
INVITED: Plasma etching of high aspect ratio structures: from complex chemistry to Bosh processing. V. Lukichev 1 , V. Yunkin 2 1.  Institute of Physics and Technology, RAS, Moscow , Russia . 2.  Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia
14.50
O3-20
Plasma Si etching processes for microsystem technology. I.I. Amirov1, O.V. Morozov1, M.O. Izuimov1, B.A. Kalnov2, A.A. Orlikovsky2, K.A. Valiev2. 1. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia
15.10
O3-21
Dry processes for formation of suspended Si bulk structures. O. V. Morozov 1 , A.V. Postnikov 1 , I.I. Amirov 1 , V.A. Kalnov 2 . 1.  Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia . 2.Institute of Physics and Technology RAS, Moscow , Russia .
15.30
O3-22
Reactive sputtering of metal targets: influence of reactive atoms implantation. V.A. Marchenko. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
15.50
O3-23
Investigation of impurity composition of atomic hydrogen beam formed by a low-pressure arc-discharge source. V.A. Kagadei , D.I. Proskurovski, and S.V. Romanenko. High Current Electronics Institute, SB RAS, Tomsk , Russia
16.10
O3-24
Langmuir-Probe applications in monitoring of plasma etching. A.V. Miakonkikh , K.V. Rudenko and A.A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
Auditorium A
SYMPOSIUM QI-2007
14.20
Q-27
Problem of detection of Rydberg atoms and quantum information processing, I.Riabtsev, D.Tretiakov, I.Beterov, V.Entin, Institute semiconductor physics, Siberian Dep.RAS
14.40
Q-28
Quantum registers on the basis of inhomogeneous chains of nuclear spins, E. B. Fel’dman, Institute of Problems of Chemical Physics of RAS
15.00
Q-29
Thermal pairwise entanglement in an inhomogeneous magnetic field , E. B. Fel’dman, A. N. Pyrkov, Institute of Problems of Chemical Physics of RAS, 142432, Chernogolovka, Moscow
15.20
Q-30
Single molecule implantation as alternative of single atom (ion) implantation for Quantum Computer development , V. Zhukov, V. Maslov, Inst. of informatics nd automation, RAS
15.40
Q-31

Prequantum model with classical fields as hidden variables. A. Khrennikov. Univ. Vaxjo, Sweden

16.00
Q-32

Fair Sampling and Rotational Invariance in EPR experiments, G. Adenier, A. Khrennikov, Vaxjo University

16.20
Q-33
Will be announced later
Auditorium B
Session 19. Micro- and Nanostructures Characterization II
Session Chairman: Akira Toriumi, 
University of Tokyo , Japan
14.20
O3-25
Photolumenescence from the nanosized Si fabricated by modified PVD process. A.F. Alexandrov 1 , S-K. Koh 2 , E.A. Kralkina 1 , J.H. Lee 2 , N.E. Maslova 1 , V.B. Pavlov 1 , V.P. Savinov 1 , V.Yu. Timoshenko 1 , K.V. Vavilin 1 . 1. Physical faculty of M.V. Lomonosov Moscow State University, Moscow Russia . 2. P&I Corporation, Seoul , S.Korea
14.40
O3-26
Luminescence of the intrinsic and extrinsic defects in hafnia films A.A   Rastorguev 1 , V.I.   Belyi 1 , T.P.   Smirnova, L.V.   Yakovkina 1 , V.A.   Gritsenko 2 , M.V.   Zamorynskaya 3 , H.   Wong 4 . 1. Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk , Russia . 2.  Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 3. Ioffe Physicotechnical Institute, RAS, St. Petersburg , Russia . 4.   Electronic Engineering Department, City University of Hong Kong
15.00
O3-27
Chemical Vapor Deposition and characterization of HfO 2 /Si composition. T.P. Smirnova 1 , F.A. Kuznetsov 1 , V.V. Kaichev 2 , S.A.  Beloshapkin 3 , V.I. Kosyakov 1 , L.V. Yakovkina 1 , M.S. Lebedev 1 . 1. Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk , Russia . 2. Boreskov Institute of Catalysis, SB RAS, Novosibirsk , Russia . 3 . Materials and Surface Science Institute, Limerick , Ireland
15.20
O3-28
Falling down capacitance impedance under light illumination of MDS-structures with three-layer SiN x dielectrics. S.A.   Arzhannikova 1, a , M.D.   Efremov 1,b , A.A.   Voschenkov 1 , V.A.   Volodin 1 , G.N.   Kamaev 1 , D.V.   Marin 1 , V.S.   Shevchuk 1 S.A.   Kochubei 1 , A.A.   Popov 2 , Yu.A.   Minakov 2 . 1.  Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia 2.  Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
15.40
O3-29
Al x GaN\GaN structure diagnostic by C-V characteristics method. K.L. Enisherlova, I.B. Gulyaev, V.G. Goryachev, A.U. Dorofeev, E.M. Temper, N.B. Gladisheva. Federal state unitary enterprise «Science &Production enterprise «Pulsar», Moscow , Russia
16.00
O3-30
CVD Diamond with Electron Conductivity. The New Data on f.c.c. Carbon. M . B .  Guseva , V . G .  Babaev , V . V .  Khvostov , I . Yu .  Koniashin , Yu . A .   Korobov , N . D .  Novikov . Department of Physics, M.V.   Lomonosov Moscow State University , Moscow , Russia
16.20
Coffee break
16.30 Entresol.
POSTER SESSION II
Bottom hall.
Exhibition
19.30
Banquet
 
Friday, October 5th , 2007
9.00
Breakfast
10.00
Departure