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Общая информация

14-я Международная конференция «Микро- и наноэлектроника – 2021» (ICMNE-2021), включающая расширенную сессию «Квантовая информатика», проводилась в очно-заочной форме 4-8 октября 2021 в парк-отеле «Ершово», Звенигород, Московская область, Россия. 

Тематика:

Физика микро- и наноразмерных приборов:

  • Проблемы и пути масштабирования наноразмерных приборов и интегральных схем.
  • Нанотранзисторы: CMOS FET, TFET, SET, молекулярные транзисторы и переключатели и т.д.
  • Интегральные устройства памяти: DRAM, ReRAM, FeRAM.
  • Приборы с 1D и 2D каналами.
  • Углеродная микро- и наноэлектроника.
  • Твердотельные приборы для THz генерации и детектирования.
  • Магнитные микро- и наноструктуры и приборы, спинтроника.
  • Сверхпроводящие микро- и наноприборы и устройства.
  • Приборы оптоэлектроники, фотоники.
  • Сенсоры, микро- и наноэлектромеханические системы (MEMS, NEMS, BioMEMS).
  • Моделирование приборов.

Технология и характеризация материалов для микро- и наноэлектроники:

  • Si, SOI, SiGe, A3B5, A2B6.
  • High-k, low-k диэлектрики.
  • Металлические пленки в приборных структурах УБИС.
  • 1D, 2D материалы.
  • Магнитные материалы, наномагнетики.
  • Материалы оптоэлектроники, фотовольтаики, метаматериалы.

Технологические процессы и перспективное технологическое оборудование микро- и наноэлектроники:

  • Литография: иммерсионная, EUV, электронная и ионная литография, наноимпринт.
  • Front-End of Line (FEOL) процессы для технологии УБИС.
  • Back-End of Line (BEOL) процессы для технологии УБИС.
  • Технологии 3D-интеграции интегральных схем.
  • Технологии 2D материалов и структур для наноэлектроники (графен, MoS2, WS2 и др.)
  • Технологии 1D структур (нанопровода, нанотрубки).
  • Технологии MEMS, NEMS, BioMEMS.
  • Технологии изготовления сверхпроводящих приборов.

Метрология:

  • Методы диагностики и управления технологическими процессами In situ (End-point детекторы, смарт-сенсоры).
  • Методы контроля, диагностики и характеризации микро- и наноструктур.

Квантовая информатика:

  • Квантовые компьютеры: теория и эксперимент.
  • Квантовые измерения.
  • Квантовые алгоритмы.
  • Квантовая связь.
  • Квантовые сенсоры.

Организаторы и спонсоры:

  • Oтделение нанотехнологий и информационных технологий РАН
  • Физико-технологический институт им. К.А. Валиева РАН, Москва, Россия
  • АО «НИИМЭ», Зеленоград, Россия
  • TechnoInfo Ltd., Wembley, UK
  • Компания НИКС, Москва, Россия
  • SPIE – The International Society for Optical Engineering
  • Журнал «Микроэлектроника», Москва, Россия

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Общая информация

Международная конференция «Микро- и наноэлектроника – 2018» (ICMNE-2018), включающая расширенную сессию «Квантовая информатика» (QI-2018), проводилась 1-5 октября 2018 в парк-отеле «Ершово», Звенигород, Московская область, Россия. 

Тематика:

Физика микро- и наноразмерных приборов:

  • Проблемы и пути масштабирования наноразмерных приборов и интегральных схем.
  • Нанотранзисторы: CMOS FET, TFET, SET, молекулярные транзисторы и переключатели и т.д.
  • Интегральные устройства памяти: DRAM, ReRAM, FeRAM.
  • Приборы с 1D и 2D каналами.
  • Углеродная микро- и наноэлектроника.
  • Твердотельные приборы для THz генерации и детектирования.
  • Магнитные микро- и наноструктуры и приборы, спинтроника.
  • Сверхпроводящие микро- и наноприборы и устройства.
  • Приборы оптоэлектроники, фотоники.
  • Сенсоры, микро- и наноэлектромеханические системы (MEMS, NEMS, BioMEMS).
  • Моделирование приборов.

Технология и характеризация материалов для микро- и наноэлектроники:

  • Si, SOI, SiGe, A3B5, A2B6.
  • High-k, low-k диэлектрики.
  • Металлические пленки в приборных структурах УБИС.
  • 1D, 2D материалы.
  • Магнитные материалы, наномагнетики.
  • Материалы оптоэлектроники, фотовольтаики, метаматериалы.

Технологические процессы и перспективное технологическое оборудование микро- и наноэлектроники:

  • Литография: иммерсионная, EUV, электронная и ионная литография, наноимпринт.
  • Front-End of Line (FEOL) процессы для технологии УБИС.
  • Back-End of Line (BEOL) процессы для технологии УБИС.
  • Технологии 3D-интеграции интегральных схем.
  • Технологии 2D материалов и структур для наноэлектроники (графен, MoS2, WS2 и др.
  • Технологии 1D структур (нанопровода, нанотрубки).
  • Технологии MEMS, NEMS, BioMEMS.
  • Технологии изготовления сверхпроводящих приборов.

Метрология:

  • Методы диагностики и управления технологическими процессами In situ (End-point детекторы, смарт-сенсоры).
  • Методы контроля, диагностики и характеризации микро- и наноструктур.

Квантовая информатика:

  • Квантовые компьютеры: теория и эксперимент.
  • Квантовые измерения.
  • Квантовые алгоритмы.
  • Квантовая связь.

Организаторы и спонсоры:

  • Физико-технологический институт РАН, Москва, Россия
  • АО «НИИМЭ», Зеленоград, Россия
  • Российский фонд фундаментальных исследований, Москва, Россия
  • Oтделение нанотехнологий и информационных технологий РАН
  • SPIE – The International Society for Optical Engineering
  • Институт физики полупроводников им. А.В. Ржанова СО РАН, Новосибирск, Россия
  • Московский государственный университет им. М.В. Ломоносова, Москва, Россия
  • Ярославский государственный университет им. П.Г. Демидова, Ярославль, Россия
  • TechnoInfo Ltd., Wembley, UK
  • Компания НИКС, Москва, Россия

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Общая информация

Международная конференция «Микро- и наноэлектроника – 2016» (ICMNE-2016), включающая расширенную сессию «Квантовая информатика» (QI-2016), проводилась 3-7 октября 2016 в д/о «Ершово», Звенигород, Московская область, Россия. 

Тематика:

Материалы и пленки для микро- и наноэлектронных структур:

  • Si, SOI, DOI, SiGe, A3B5, A2B6
  • High-k диэлектрики, low-k диэлектрики
  • Металлы для затворов, контактов и систем металлизации наноразмерных приборов
  • Магнитные материалы, наномагнетики
  • 1D и 2D материалы
  • Материалы для оптоэлектроники, солнечной энергетики, метаматериалы

Физика микро- и наноразмерных приборов:

  • Тенденции масштабирования: More Moore, beyond CMOS, and more than Moore trends
  • Нанотранзисторы: CMOS FET, TFET, SET, молекулярные и другие
  • Интегральные устройства памяти, DRAM, ReRAM, FeRAM
  • Магнитные микро- и наноструктуры, приборы спинтроники
  • Сверхпроводящие микро- и наноприборы и устройства
  • Приборы оптоэлектроники, фотоники
  • Микро- и наноэлектромеханические системы (MEMS, NEMS)
  • Моделирование

Технологии и перспективное технологическое оборудование для производства приборов микро- и наноэлектроники:

  • Суб-65 нм литография: DUV, иммерсионная, EUV, электронная и ионная литография, наноимпринт
  • Front-End of Line (FEOL) процессы для технологии УБИС
  • Back-End of Line (BEOL) процессы для технологии УБИС
  • Технологии получения 2D материалов (графен, MoS2, WS2 и др.)
  • Технологии создания МЭМС и НЭМС
  • Технологии создания сверхпроводящих приборов

Метрология:

  • In situ методы мониторинга технологических процессов
  • Методы контроля, диагностики и характеризации микро- и наноструктур

Квантовая информатика:

  • Квантовые компьютеры: теория и эксперимент
  • Квантовые измерения
  • Квантовые алгоритмы
  • Квантовая связь

Организаторы и спонсоры:

  • Физико-технологический институт, Москва, Россия
  • АО «Научно-исследовательский институт молекулярной электроники», Зеленоград, Россия
  • Российский фонд фундаментальных исследований, Москва, Россия
  • Российская академия наук, Oтделение нанотехнологий и информационных технологий
  • Научный Совет РАН по физическим и химическим основам полупроводникового материаловедения
  • SPIE – The International Society for Optical Engineering, USA — the publisher of the Conference proceedings
  • Институт физики полупроводников, Новосибирск, Россия
  • Московский государственный университет им. М.В. Ломоносова, Москва, Россия
  • Ярославский государственный университет им. П.Г. Демидова, Ярославль, Россия
  • TechnoInfo Ltd., Wembley, UK
  • Компания НИКС, Москва, Россия
  • ЗАО «НТО» (SemiTEq), Санкт-Петербург, Россия

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Общая информация

Международная конференция «Микро- и наноэлектроника – 2014» (ICMNE-2014), включающая расширенную сессию «Квантовая информатика» (QI-2014), проводилась 6-10 октября 2014 в д/о «Ершово», Звенигород, Московская область, Россия. 

Тематика:

Материалы и пленки для микро- и наноэлектроники:

  • КНИ, Si, SiGe, A3B5, A2B6
  • Тонкие пленки, high-k диэлектрики, low-k диэлектрики
  • Материалы для металлических затворов, контактов и систем металлизации микро- и наноразмерных приборов
  • Магнитные материалы, наномагнетики
  • Нанотрубки, графен
  • Материалы для оптоэлектроники, солнечной энергетики, метаматериалы

Технологии микро- и наноэлектроники, технологическое оборудование:

  • Суб-100 нм литография: DUV, EUV, электронная и ионная литография, наноимпринт
  • Плазменные и ионно-пучковые процессы и технологии для микро- и наноэлектроники
  • Ионная имплантация: пучковая и плазменно-иммерсионная
  • Процессы CVD, молекулярная эпитаксия

Метрология:

  • Методы мониторинга технологических процессов, определение момента окончания процессов
  • Методы диагностики и характеризация микро- и наноструктур

Физика и технология микро- и наноразмерных приборов:

  • Нанотранзисторы: МДП, одноэлектронные, тонкопленочные и другие
  • Интегральные устройства памяти, мемристоры
  • Магнитные микро- и наноструктуры
  • Приборы спинтроники
  • Сверхпроводящие микро- и наноприборы и устройства
  • Приборы оптоэлектроники, фотоники
  • Микро- и наноэлектромеханические системы (MEMS, NEMS)

Моделирование:

  • Моделирование технологических процессов
  • Моделирование микро- и наноэлектронных приборов

КНИ и низкоразмерные структуры:

  • Технология и эксперименты
  • Приборы
  • Теория и моделирование

Квантовая информатика:

  • Квантовые компьютеры: теория и эксперимент
  • Квантовые измерения
  • Квантовые алгоритмы
  • Квантовая связь

Организаторы и спонсоры:

  • Физико-технологический институт (ФТИАН), Москва, Россия
  • ОАО «НИИМЭ и Микрон», Зеленоград, Россия
  • Российский фонд фундаментальных исследований, Москва, Россия
  • Федеральное агенство научных организаций, Москва, Россия
  • Российская академия наук, Oтделение нанотехнологий и информационных технологий
  • Научный Совет РАН по физическим и химическим основам полупроводникового материаловедения
  • SPIE – The International Society for Optical Engineering
  • Институт физики полупроводников, Новосибирск, Россия
  • Московский государственный университет им. М.В. Ломоносова, Москва, Россия
  • Ярославский государственный университет им. П.Г. Демидова, Ярославль, Россия
  • TechnoInfo Ltd., Wembley, UK
  • Компания НИКС, Москва, Россия

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Общая информация

Международная конференция «Микро- и наноэлектроника – 2012» (ICMNE-2012), включающая расширенную сессию «Квантовая информатика» (QI-2012) и семинар «Кремний на изоляторе» (SOI-2012), проводилась 1-5 октября 2012 в пансионате «Липки», Звенигород, Московская область, Россия. 

Тематика:

Материалы и пленки для микро- и наноэлектроники:

  • КНИ, Si, SiGe, A3B5, A2B6
  • Тонкие пленки, high-k диэлектрики, low-k диэлектрики
  • Материалы для металлических затворов, контактов и систем металлизации микро- и наноразмерных приборов
  • Магнитные материалы, наномагнетики
  • Нанотрубки, графен
  • Материалы для оптоэлектроники, солнечной энергетики, метаматериалы

Технологии микро- и наноэлектроники, технологическое оборудование:

  • Суб-100 нм литография: DUV, EUV, электронная и ионная литография, наноимпринт
  • Плазменные и ионно-пучковые процессы и технологии для микро- и наноэлектроники
  • Ионная имплантация: пучковая и плазменно-иммерсионная
  • Процессы CVD, молекулярная эпитаксия

Метрология:

  • Методы мониторинга технологических процессов, определение момента окончания процессов
  • Методы диагностики и характеризация микро- и наноструктур

Физика и технология микро- и наноразмерных приборов:

  • Нанотранзисторы: МДП, одноэлектронные, тонкопленочные и другие
  • Интегральные устройства памяти, мемристоры
  • Магнитные микро- и наноструктуры
  • Приборы спинтроники
  • Сверхпроводящие микро- и наноприборы и устройства
  • Приборы оптоэлектроники, фотоники
  • Микро- и наноэлектромеханические системы (MEMS, NEMS)

Моделирование:

  • Моделирование технологических процессов
  • Моделирование микро- и наноэлектронных приборов

КНИ и низкоразмерные структуры:

  • Технология и эксперименты
  • Приборы
  • Теория и моделирование

Квантовая информатика:

  • Квантовые компьютеры: теория и эксперимент
  • Квантовые измерения
  • Квантовые алгоритмы
  • Квантовая связь

Организаторы и спонсоры:

  • Российская академия наук (РАН), Oтделение нанотехнологий и информационных технологий
  • Российский фонд фундаментальных исследований (РФФИ)
  • Научный Совет РАН по физическим и химическим основам полупроводникового материаловедения
  • Физико-технологический институт РАН (ФТИАН), Москва, Россия
  • Учебно-научный центр «МГУ – ФТИАН», Москва, Россия
  • SPIE – The International Society for Optical Engineering
  • Институт физики полупроводников (ИФП) СО РАН, Новосибирск, Россия
  • Московский государственный университет им. М.В. Ломоносова (МГУ), Москва, Россия
  • Ярославский государственный университет им. П.Г. Демидова (ЯрГУ), Ярославль, Россия
  • TechnoInfo Ltd., Wembley, UK
  • Компания НИКС, Москва, Россия

Вы можете скачать pdf-файлы программы конференции и сборника тезисов.

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Общая информация

Международная конференция“Микро- и наноэлектроника – 2009” (ICMNE-2009) включающая расширенные сессии “Квантовая информатика” (QI-2009) проводилась 5-9 октября, 2009 в пансионате “Липки”, Звенигород, Московская область, Россия. 

Тематика:

Материалы, пленки для микро- и наноэлектроники:

  • КНИ, напряженный Si, SiGe, GaAs, GaN
  • Тонкие пленки, high-k диэлектрики, low-k диэлектрики
  • Материалы для металлических затворов, контактов и систем металлизации микро- и наноразмерных приборов
  • Магнитные материалы. Наномагнетики
  • Нанотрубки
  • Материалы для оптоэлектроники, солнечной энергетики, метаматериалы

Технологии микро- и наноэлектроники, технологическое оборудование:

  • Суб-100 нм литография: DUV, EUV, электронная и ионная литография, наноимпринт
  • Плазменные процессы и технологии для микро- и наноэлектроники
  • Ионная имплантация: пучковая и плазменно-иммерсионная
  • Процессы CVD, молекулярная эпитаксия

Метрология:

  • Методы мониторинга технологических процессов, определение момента окончания процессов
  • Методы диагностики и характеризация микро- и наноструктур

Физика и технология микро- и наноразмерных приборов:

  • Нанотранзисторы: МДП, одноэлектронные. Память на квантовых точках. Интегральная схемотехника
  • Магнитные микро- и наноструктуры
  • Спинтроника
  • Сверхпроводящие микро-, наноприборы и системы
  • Молекулярная электроника
  • Приборы оптоэлеткроники, фотоники
  • Микро- и нано- электромеханические системы (MEMS, NEMS)

Моделирование:

  • Моделирование технологических процессов
  • Моделирование микро- и наноэлектронных приборов, устройств
  • Моделирование ИС

Квантовая информатика:

  • Quantum computer and complex quantum systems modeling (quantum computer problems, computer simulation of quantum systems, decoherence, entanglement)
  • Quantum information processing (quantum information, applications of quantum methods)
  • Quantum cryptography (quantum channels, nonlocality, security, error correction)

Организаторы и спонсоры:

  • Российская Академия Наук (РАН), Oтделение нанотехнологий и информационных технологий
  • Министерство образования и науки Российской Федерации
  • Российский фонд фундаментальных исследований (РФФИ)
  • Научный Совет РАН “Фундаментальные проблемы создания элементной базы информационно-вычислительных и управляющих систем”
  • Научный Совет РАН по физическим и химическим основам полупроводникового материаловедения
  • Физико-технологический институт РАН (ФТИАН), Москва, Россия
  • Учебно-научный центр «МГУ – ФТИАН»
  • SPIE – The International Society for Optical Engineering
  • Институт физики полупроводников (ИФП) СО РАН, Новосибирск, Россия
  • Московский Государственный Университет им. М.В.Ломоносова (МГУ), Россия
  • Ярославский Государственный Университет им. П.Г.Демидова (ЯрГУ), Россия
  • Московский институт электронной техники (МИЭТ, ТУ), Зеленоград, Россия
  • OAO “НИИМЭ и Микрон”, Россия
  • INTEL, Inc., USA
  • Fraunhofer Institute of Integrated Systems and Device Technology (FhG IIS-B), Germany
  • Carl Zeiss AG, Germany
  • TechnoInfo Ltd, UK
  • Компания НТ-МДТ, Россия
  • Компания НИКС , Россия

Вы можете скачать pdf-файлы программы конференции и сборника тезисов.

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ICMNE-2007 AND SYMPOSIUM QI-2007 SCIENTIFIC PROGRAM

(Final Edition)
(Posters)

Download files:
ICMNE-2007 Oral Presentations
ICMNE-2007 Posters
ICMNE-2007 Delayed Posters
QI-2007 Oral Presentations

Monday, October 1st , 2007
9.00 — …
Registration & Accommodation
13.00 — 14.00
Lunch
Conference hall
Special Session. Presentations of Hi-Tech Companies.
 
16.00
S1-1
 NANOFABS – basic systems for new developments in the field of nanoelectronics & micro-, nanomechanics. V.A. Bykov, V.V. Kotov, V.V. Polyakov, V. Atepalikhin. NT-MDT Company, Moscow , Russia .
16.30
S1-2
 The future of nano technology based on electron microscopy. Uwe Schubert. Nano Technology Systems Division Carl Zeiss SMT AG
17.00
S1-3
 The inspection of SEM into the third dimension. Peter Gnauck. Nano Technology Systems Division Carl Zeiss SMT AG
17.30
S1-4
 Will be announced later
18.00
Welcome Party
19.00
Dinner
 
Tuesday, October 2nd , 2007
 
Conference hall
8.00
 Breakfast
8.40
Welcome remarks

E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow
K.A. Valiev, Program Chair, IPT RAS, Moscow
Plenary Session
Session Chairman: Alexander Orlikovsky, Institute of Physics &Technology RAS, Russia
8.50
L1-01
 KEYNOTE: Materials and MOS device architectures for the sub-32 nm node. Th. Skotnicki and S. Monfray. ST Microelectronics, Crolles , France
9.30
L1-02
 INVITED: High-k dielectric films for advanced microelectronics. A. Toriumi. University of Tokyo , Japan
10.10
L1-03
 INVITED: Low-k dielectrics for microelectronics. M. Baklanov . IMEC, Leuven , Belgium .
10.40
L1-04
 INVITED: Bottom-up interconnect formation possibility using supercritical fluids: beyond scalability. E.   Kondoh. University of Yamanashi, Japan.
11.10
L1-05
 INVITED: Physics and Applications of Graphene. K.S. Novoselov 1 , S.V. Morozov 2 , A.K. Geim. 1. School of Physics and Astronomy, University of Manchester , Manchester , UK 2. Institute for Microelectronics Technology, Chernogolovka , Russia
11.40 — 12.00
Coffee break. Winter garden
Conference Hall
Session 1. Sub-100 nm Lithography
Session Chairman: Kamil Valiev, Institute of Physics &Technology RAS, Russia
12.00
O1-01
 Manufacturing and investigation of objective lens for ultrahigh resolution lithography facilities. N. Chkhalo, E. Kluenkov, A. Pestov, D. Raskin, N. Salashchenko. Institute for Physics of Microstructures, RAS, Nizhny Novgorod , Russia
12.20
O1-02
 Multilayer Zr/Si filters for EUV lithography and for radiation source metrology. M.S. Bibishkin 1 , N.I. Chkhalo 1 , S.A.  Gusev 1 , E.B. Kluenkov 1 , A.Ja. Lopatin 1 , V.I. Luchin 1 , A.E. Pestov 1 , N.N. Salashchenko 1 , L.A.  Shmaenok 2 , N.N. Tsybin 1 . 1.  Institute for Physics of Microstructures, RAS, Nizhny Novgorod , Russia . 2.   PhysTeX, Vaals , Netherlands
12.40
O1-03
 Alternating Phase Shift Mask design problem statement. M. Myachin 1 , N. Savinski 2 , G. Krasnikov , 3 N. Shelepin 3 , O. Gutshin 3 , I.  Sirtsov 3 , A. Sutyagin 3 . 1.  Yaroslavl State University , Yaroslavl , Russia 2.   Institute of Physics &Technology, RAS, Yaroslavl Branch , Russia , 3. JSC Mikron , Zelenograd, Moscow
13.00
O1-04
 Modification of nanolithography method using optical tweezers for planar nanostructures fabrication. I.V. Soboleva, A.G. Zhdanov, A.A. Fedyanin. Faculty of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia
Auditorium A
Session 2. Simulation and Modeling I
Session Chairman: Tariel Makhviladze, Institute of Physics &Technology RAS, Russia
12.00
L1-06
 INVITED: New Results of Modeling in Micro- and Nanoelectronics. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 2 . 1. Institute for Problems in Mechanics, RAS, Moscow , Russia . 2.  Institute of Physics and Technology, RAS, Moscow , Russia
12.30
O1-05
 The process window TCAD methodology for DFM in the field of deep submicron nodes and nanoscale transistors. Y. Chaplygin, M. Korolev, T. Krupkina. Moscow Institute of Electronic Engineering, Moscow , Russia
12.50
O1-06
 The TCAD estimation of electrical stability for different layout SOI MOSFETs. T. Krupkina. Moscow Institute of Electronic Engineering, Moscow , Russia
13.10
O1-07
 Technology modelling of microsystem technics devices. A. Kozlov, D. Rodionov. Moscow Institute of Electronic Technology, Moscow , Zelenograd , Russia
Auditorium B
Session 3. Defects and Impurities in Semiconductors
Session Chairman: Eugene Yakimov, Institute of Microelectronics Technology , Russia
12.00
O1-08
 Spatial distribution of electrically active defects in strained-Si / SiGe / Si heterostructures. N. Yarykin 1 , E. Yakimov 1 , G. Rozgonyi 2 . 1.  Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia . 2. Department of Materials Science and Engineering, North Carolina State University , Raleigh , NC , USA
12.20
O1-09
 Stable silicon resistors at 20-160 ° C due to divacancy involving in high purity neutron doped Si. G.N. Kamaev, M.D. Efremov, V.A. Stuchinsky, B.I. Mihailov, S.G. Kurkin. Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia
12.40
O1-10
 Application of SQUID for detection of a small quantity of spin impurity in semiconductors. A.I.   Golovashkin 1 , A.L.   Karuzskiy 1 , A.A.   Orlikovsky 2 , V.V.   Privezentsev 2 , A.M.   Tshovrebov 1 . 1. Lebedev Physical Institute, Russian Academy of Science , Moscow , Russia ; 2. Institute of Physics & Technology, Russian Academy of Science , Moscow , Russia
13.00
O1-11
 Determination of isotope ratio of boron in B-alloyed crystals of diamond by SIMS. A.N. Pustovit 1 , E.A. Ekimov 2 , I.I. Vlasov 3 , A.F. Vyatkin 1 . 1.  Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia . 2.  Vereshchagin Institute for High Pressure Physics, RAS, Troitsk, Moscow region, Russia . 3.  General Physics Institute, RAS, Moscow , Russia
13.30 — 14.30
Lunch
Conference Hall
Session 4. Nanodevices and Nanostructures I
Session Chairman: Oleg Pchelyakov, Institute of Semiconductor Physics SB RAS, Russia
14.30
O1-12
 From molecularly to atomically thin solid nanoshells: fabrication, properties and applications. V.Ya. Prinz, V.A. Seleznev, S.V. Golod. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
14.50
O1-13
 Fabrication of nanostructures for stamps production used in nanoimprint lithography by means of focused ion beam technique. A.F. Vyatkin 1 , Yu.   A. Agafonov 1 , V.I. Zinenko 1 , Yu. M. Lunin 1 , B.G. Freikman 1 , V.I. Balykin 2 , P.N. Melent’ev 2 . 1. Institute of Microelectronics Technology, RAS, Moscow district, Chernogolovka, Russia . 2. .Institute of spectroscopy, RAS, Moscow district, Troitsk
15.10
O1-14
 Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon. V. Sverdlov 1,2 , H. Kosina 1 , and S. Selberherr 1 . 1. Institute for Microelectronics, TU Wien, Wien , Austria . 2. V.A. Fock Institute of Physics, State University of St.Petersburg , St.Petersburg , Russia
15.30
O1-15
 Graphene Nanoelectronics: Device Electrostatics and Kinetics. G. I. Zebrev. Department of Microelectronics, Moscow Engineering Physics Institute, Russia
15.50
O1-16
 Quantum Conductivity of Linear Chain Carbon. M.B. Guseva, V.G.  Babaev , N.D.  Novikov, V.V. Khvostov. Department of Physics, Moscow State University , Moscow , Russia
Auditorium A
Session 5. MEMS & Sensors
Session Chairman: Vladimir Lukichev, Institute of Physics &Technology RAS, Russia
14.30
O1-17
 Divergence Instability o f a Extensible Microplate Subjected to Nonlinear Electrostatic Pressure. Gh.   Rezazadeh 1 , H.   Yagubizade 1 , Y.   Alizadeh 2 . 1. Mech. Eng. Dept., Urmia University , Urmia , Iran . 2. Mech. Eng. Dept., Arak Azad University , Arak , Iran
14.50
O1-18
 Simulation, formation and dynamic characteristics of e lectrostatically actuated switches . A.V.   Postnikov 1 , I.I.   Amirov 1 , V.V.   Naumov 1 , V.A.   Kalnov 2 . 1. Institute of microelectronics, Russian Academy of Science, Yaroslavl, Russia 2. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
15.10
O1-19
 High energy microelecromechanical oscillator based on the electrostatic microactuator. I. Baginsky, E. Kostsov , V. Sobolev. Institute of Automation and Electrometry, SB RAS, Novosibirsk , Russia
15.30
O1-20
 Application of single crystals of lithium niobate with bidomain structure for creation actuators of micro and nano moving ranges. V.Antipov, A.Bykov, M.Malinkovich 1 , Y.Parkhomenko. Moscow Institute Of Steel And Alloys (Technological University), Moscow , Russia
15.50
O1-21
 Electromechanical energy conversion in the nanometer gaps. E.G.   Kostsov. Institute of Automation and Electrometry, SB RAS, Novosibirsk , Russia
16.10
O1-22

Flicker-noise gas sensors as basis elements of microanalytical systems. M. Makoviychuk. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
Auditorium B
Session 6. Photonics and Optoelectronics
Session Chairman: Sergey Nikitov, Institute of Radioengineering and Electronics RAS, Russia
14.30
O1-23
 Distant- and interference-spatial spectroscopy of evanescent waves . M.Yu. Barabanenkov*, Yu.N.  Barabanenkov , S.A.  Nikitov. * Institute of Microelectronics Technology, RAS, Chernogolovka , Russia . Institute of Radioengineering and Electronics, RAS, Moscow , Russia
14.50
O1-24
 Polarization switching dynamics of nonlinear ferroelectric photonic crystals. N.E. Sherstyuk 1 , E.D. Mishina 1 , V.M. Muhortov 2 . 1. Moscow State Institute of Radioenginering, Electronics and Automation, Moscow , Russia ; 2. South Scientific Center of Russian Academy of Science , Rostov-on-Don , Russia
15.10
O1-25
 Magnetoplasmonic effects in two-dimensional photonic crystals. A.G. Zhdanov 1 , T.V. Dolgova 1 , A.A. Fedyanin 1 , A.V. Baryshev 2 , A.B. Khanikaev 2 , H. Uchida 2 , and M. Inoue 2 . 1.  Dept. of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia 2. Dept. of Electrical and Electronic Eng. , Toyohashi University of Technology , Toyohashi , Japan
15.30
O1-26
 Application of Ge- Si Nanostructures in Photovoltaic. O.P. Pchelyakov. Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia
15.50
O1-27
 Red Channel Frequency-Contrast Characteristics Correction Method of the Matrix Photoreceiver Based on Simplified Design of the Photocells with Deep Color Separation. I.V. Vanyushin 2 , A.V. Verhovtseva 2 , A.V. Gergel’ 1 , N.M. Gorshkova 1 , V.A. Zimoglyad 2 , Yu.I. Tishin 2 . 1.  Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia . 2.   “Unique IC`s”, LLC, Moscow, Russia
16.10
O1-28
 SILAR Preparation of Charge Selective Contacts for Future Photovoltaics. S. Gavrilov 1 , A. Zheleznyakova 1 , Th. Dittrich 2 , E. Poltoratsky 3 , A. Belogorokhov 4 1. Moscow Institute of Electronic Technology, Moscow , Russia , 2. Hahn-Meitner Institut , Berlin , Germany , 3. State Research Institute of Physical Problems, Moscow , Russia , 4. Institute of Rare Metals, Moscow , Russia
16.30 — 17.00
Coffee break. Winter garden
Conference Hall
Session 7. Devices and ICs
Session Chairman: Andrey Vasiliev, FSU Enterprise “Pulsar”, Russia
17.00
O1-29
 Physical Limitations of Reliability of Solid-State Microwave Elements at Micro- and Nanoelectronics. A. Vasiliev, V. Sinkevitch. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
17.20
O1-30
 Sign magnetosensitivity of dual-collector lateral bipolar magnetotransistor. R.D. T ikhonov. SMC «Technological Centre» MIEE, Moscow — Zelenograd , Russia
17.40
O1-31
 High speed integrated switchboards based on connected quantum wells. B. Konoplev 1,2 , E. Ryndin 2 . 1. Taganrog Institute of Technology — Southern Federal University , Taganrog , Russia . 2. Southern Scientific Center of Russian Academy of Sciences , Rostov-on-Don , Russia
18.00
O1-32
 Self-heating influence on device interconnect temperature in high-voltage SOI MOSFET. А . Krasukov, E. Artamonova. Moscow State Insitute of Electronic Engineering, Moscow , Russia
18.20
O1-33
 Microwave GaN Transistors: Achievements and Prospects. A. Vasiliev, A. Dorofeev, Yu. Kolkovsky, V. Minnebaev. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
18.40
O1-34
 Nanoionic supercapacitors for 0.5 V nanoelectronics. A.L. Despotuli, A.V. Andreeva, V.V. Aristov. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
Auditorium A
Session 8. Thin Films
Session Chairman: Mikhail Baklanov, IMEC, Leuven , Belgium
17.00
O1-35
 Electric Pulse Induced Resistance Change in Oxide Thin Film Heterostructures. A. Ignatiev, N.J. Wu , X. Chen, C. Papagianni, Y. B. Nian, J. Strozier. Texas Center for Advanced Materials, University of Houston , Houston , USA
17.20
O1-36
 MBE growth of Ge-Si strained structures with the step buffer for two-dimensional electron gas. L.V. Sokolov, Yu.B. Bolkhovitianov, and A.S. Derjabin. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
17.40
O1-37
 Development of MBE technology of III-V semiconductor heterostructures for ultra-high frequency devices. K. Zhuravlev, A. Toropov, V. Mansurov. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
18.00
O1-38
 Surprising phase transformation of a-Si:H films under femtosecond laser impact. V.A. Volodin 1,2 , M.D. Efremov 1 , G.A. Kachurin 1 , S.A.  Kochubei 1 , A.G. Cherkov 1 , M. Deutschmann 3 , N. Baersch 3 . 1 .  Institute of Semiconductor P hysics SB RAS , Novosibirsk , Russi a . 2 .  Novosibirsk State University , Novosibirsk , Russia . 3. Laser Zentrum Hannover, Hannover, Germany
18.20
O1-39
 Deposition of ultrathin magnetic films by magnetron sputtering with RF bias on substrate. V.V. Naumov, V.F. Bochkarev, Ed.Yu. Buchin. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
18.40
O1-40
 Emitting prop er ties of cobalt thin films reduced from oxide by proton irradiation. B. Gurovich, K. Prikhodko , A. Domantovsky, K. Maslakov. Russian Research Center «Kurchatov Institute», Moscow , Russia
Auditorium B
Session 9. Superconducting Structures
Session Chairman: Mikhail Kupriyanov, Institute of Nuclear Physics , Moscow State University , Russia
17.00
O1-41
 Josephson effect in laterally inhomogeneous structures with ferromagnetic materials. T. Karminskaya 1 , M. Kupriyanov 1 , N.Pugach 2 . Institute of Nuclear Physics , Moscow State University , Moscow , Russia . 2. Physics Department of Moscow State University , Moscow , Russia
17.20
O1-42
 Ferromagnetic nanodots as source of magnetic field: control transport properties of Josephson junctions and diluted magnetic semiconductor. S.N. Vdovichev. Institute for Physics of Microstructures, RAS, Nizhniy Novgorod , Russia
17.40
O1-43
 High Linearity Josephson Array Structures. V.K. Kornev 1 , I.I. Soloviev 1 , N.V. Klenov 1 , and O. A. Mukhanov 2 . 1. Department of Physics, M.V.   Moscow State University , Moscow , Russia . 2. HYPRES, Inc., Elmsford , NY , USA
18.00
O1-44
 Full synchronization of arrays of high-Tc Josephson junctions. A.M. Klushin 1,2 , M. He 1,3 , M.Yu. Levitchev 2 , V.A. Markelov 2 , V.V. Kurin 2 and N. Klein 1 . 1. Institute for Bio- and Nanosystems and CNI-Centre of Nanoelectronic Systems for Information Technology Forschungszentrum Julich GmbH, Julich , Germany . 2. Institure for physics of microstructures, RAS, Nizhny Novgorod, Russia . 3 Dept. of Electronics, Nankai Univ. , Tianjin , P. R. China
18.20
O1-45
 Fluctuations of the thin diffusive metal film under the influence of microwave radiation. I. Devyatov, M. Kupriyanov, D. Goncharov. Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow , Russia
18.40
O1-46
 Out-of-plane tilted Josephson junctions of bi-epitaxial YBa 2 Cu 3 O x thin films. J.E. Mozhaeva 1 , P.B. Mozhaev 1 , J. Bindslev Hansen 2 , C.S. Jacobsen 2 , I.K. Bdikin 3 ,
I.M. Kotelyanskii 4 , V.A. Luzanov 4 , S.G. Zybtsev 4 . 1.   Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia . 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark . 3.  CICECO, University of Aveiro , Aveiro , Portugal . 4.  Institute of Radio Engineering
and Electronics, Russian Academy of Sciences , Moscow , Russia
19.00
Dinner
 
Wednesday, October 3rd 2007
8.15
Breakfast
8.50
Welcome remarks

K.A. Valiev. Institute of Physics and Technology, Russian Academy of Sciences.
Conference Hall
Plenary Session of SYMPOSIUM QI-2007
Chairman: Y. Ozhigov
9.00
Q-01
 Coulomb blockade of anyons in quantum antidots. D.V.Averin. Department of Physics and Astronomy, Stony Brook University, SUNY, Stony Brook, NY, USA
9.30
Q-02
 Reversible logic circuits as prototypes of prospective quantum computers, V. Semenov, J. Ren and D. Averin, Stony Brook University, Department of Physics and Astronomy, Stony Brook, NY
10.00
Q-03
 Single-qubit operations in the double-donor structure driven by optical and voltage pulses . A. V. Tsukanov . Institute of Physics and Technology, Russian Academy of Sciences
10.30
Coffee break
Conference Hall
Session 10. Nanodevices and Nanostructures II
Session Chairman: Alex Ignatiev, Texas Center for Advanced Materials, University of Houston , USA
10.50
L2-01
 INVITED: New Trends in Development of Modern Silicon Nanoelectronics. I.G. Neizvestny. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
11.10
O2-01
 SiGe heterostructures on insulator for CMOS transistors formed by interface mediated endotaxy. V.P. Popov 1 , I.E. Tyschenko 1 , A.G. Cherkov 1 , A.E. Klimov 1 , M. Volskow 2 . 1.  Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 2 .  Institute of Ion Beam Physics and Material Research, Dresden , Germany
11.30
O2-02
 Interacting resonances and electron density redistribution in resonant- tunneling heterostructures. A. A. Gorbatsevich 1 , V. V. Kapaev 2 , M. N. Zhuravlev 1 . 1. Moscow State Institute of Electronic Technology ( Technical University ), Moscow , Russia . 2. P.N. Lebedev Physical Institute, Moscow , Russia
11.50
O2-03
 Memory Effect in Dielectrics with Inc orporated Nanosize Clusters. A.E. Berdnikov, A.A. Popov, A.A. Mironenko, V.D. Chernomordick. Institute of Physics &Technology RAS, Yaroslavl Branch , Russia
12.10
O2-04
 Work function engineering of Ni-Si metal gates on HfO 2 high-? gate dielectrics as probed with in-situ XPS. A.V. Zenkevich, Yu.Yu. Lebedinskii, Yu.A. Matveev and V.N. Nevolin. Moscow Engineering Physics Institute (state university), Russia
12.30
O2-05
 Using heterostructures for nanoscaled electronic devices in Novosibirsk Institute of Semiconductor Physics. V.P. Popov, I.E. Tyschenko, A.V. Latyshev, V.A. Gaisler, I.G. Neizvestny, A.L. Aseev. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
Auditorium A
SYMPOSIUM QI-2007
Chairman: A. Tsukanov
11.00
Q-04
 Non-demolishing measurements of an electron spin state via Fano resonance . L. Gorelik 1 , V. Vyurkov 2 , and A. Orlikovsky 2 1. Chalmers University of Technology and Goteborg University, Goteborg, Sweden, 2. Institute of Physics and Technology, RAS, Moscow, Russia
11.20
Q-05
 Relative coordinates of coherent electron pair. C. Usenko 1 , N. Cherkashyna 1 . National Taras Shevchenko University of Kyiv, Kyiv, Ukraine
11.40
Q-06
 The Software for Quantum Mechanical Calculation of Electronic Structure of Molecules. A.G. Gasanov 1 , F.G. Pashaev 1 . 1. Baku State University, Baku, Azerbaijan
12.00
Q-07
 Josephson-junction qubits . N.V. Klenov, V.K. Kornev, N. G. Pugach, T.S. Rumyantseva. Department of Physics, Moscow State University, Moscow, Russia
12.20
Q-08
 Simulation of Quantum Algorithms with high-level language. Mathematica. P.Nyman . International Center for mathematical Modeling in physics, Engineering and Cognitive science, MSI, Vaxjo University, Sweden
12.40
Q-09
 Geometric information in eight dimensions vs. quantum information. V.I. Tarkhanov 1 , M.M. Nesterov 2 . 1. St. Petersburg State Polytechnic University, St. Petersburg, Russia. 2. St. Petersburg Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia
Auditorium B
Session 11. Magnetic Micro- and Nanostructures
Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS, Russia
11.00
O2-06
 Non-equilibrium magnetism of nanoparticles revealed in ‘static’ and radiofrequency measurements. M.A. Chuev, N.P. Aksenova, P.G.   Medvedev. Institute of Physics and Technology, RAS, Moscow , Russia
11.20
O2-07
 Peculiarities of the extraordinary Hall effect for planar arrays Fe nanoparticles embedded in an ultrathin Pt film. V.T. Volkov, V. I. Levashov, V. N. Matveev and V. A. Berezin. Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia
11.40
O2-08
 Inhomogeneously magnetization of magnonic ferrite film measurement using magnetooptical Kerr effect. A. Klimov, S. Nikitov. Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia
12.00
O2-09
 Finite size effects in antiferromagnetic multilayers. V.V. Kostyuchenko 1 , M.V. Kostyuchenko 2 . 1.  Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia 2.  Yaroslavl State Technical University , Yaroslavl , Russia
12.20
O2-10
 Magnetoresistance of ferromagnetic nanoconstrictions in planar configuration. A.A. Bukharaev 1,2 , R.G. Gatiyatov 1 , P.A. Borodin 1 . 1.  Zavoisky Physical Technical Institute, Russian Academy of Sciences , Kazan , Russia . 2.  Kazan State University , Kazan , Russia
12.40
O2-11
 Spin-flop effect in antiferromagnets induced by the spin-polarised current. H. Gomonay, V. Loktev. National Technical University «KPI», Kyiv, Ukraine
13.00
Lunch
Conference Hall
Session 12. Plasma Physics and Technologies I
Session Chairman: Dorel Toma, Tokyo Electron  U.S. Holding
14.00
L2-02
 INVITED: Dual (multi-) frequency capacitive coupled plasma (DF CCP) as an effective tool for nanotechnology. A.T. Rakhimov. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University (SINP MSU), Moscow , Russia
14.30
O2-12
 A plasma etch process for bulk finFET manufacturing. D. Shamiryan, A. Redolfi, W. Boullart. IMEC, Leuven , Belgium
14.50
O2-13
 Nanoscale etching processes. A. Rubin, C. Welch. Oxford Instruments Plasma Technology, Bristol , UK
15.10
O2-14
 Plasma parameters and active particles kinetics in Cl 2 and HCl dc glow discharges. A. Efremov , V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo , Russia
15.30
O2-15
 Theoretical study of ionization processes in BF 3 plasmas. V.P. Kudrya. Institute of Physics and Technology, RAS, Moscow , Russia
15.50
O2-16
 Investigation of plasma uniformity in processing chambers of plasma tools for microelectronics by computer-aided tomography. K. Rudenko , A. Fadeev, S. Averkin, M. Rudenko, I.  Tyurin, A. Rylov, and A. Orlikovsky. Institute of Physics and Technology, RAS, Moscow , Russia
Auditorium A
SYMPOSIUM QI-2007
Chairman: Y.Bogdanov
14.00
Q-10
 Diffusion approximation of quantum dynamics. Y.I. Ozhigov . Moscow State University, Moscow, Russia
14.30
Q-11
 Numerical computations of molecular stationary states. B.K. Novosadov . Moscow State University
14.50
Q-12
 What Fundamentally New Properties Are Introduced by Special Relativity to Quantum Cryptography , D.Pomozov, S.Molotkov , Institute of physics and technology RAS
15.10
Q-13
 EPR — experiments: analysis of Bell inequalities violation A. Kraklauer, New York, USA
15.30
Q-14
 An investigation of the antiferromagnet-based NMR quantum register in inhomogeneous magnetic field , A. Kokin. Institute of Physics and Technology, RAS
15.50
Q-15
 Will be announced later
Auditorium B
Session 13. Simulation and Modeling II
Session Chairman: Tariel Makhviladze, Institute of Physics &Technology RAS, Russia
14.00
O2-17
 Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths . A. Burenkov, C. Kampen, J. Lorenz, and H. Ryssel. Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen , Germany
14.20
O2-18
 All-quantum simulation of an ultra-small SOI MOSFET. V. Vyurkov 1 , I.  Semenikhin 1 , V. Lukichev 1 , A. Burenkov 2 , and A. Orlikovsky 1 . 1.  Institute of Physics and Technology, RAS, Moscow , Russia . 2.  Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen , Germany
14.40
O2-19
 Modeling of non-stationary electron transport in semiconductor nanowires and carbon nanotubes. D.V. Pozdnyakov, A.V. Borzdov, V.M. Borzdov, F.F. Komarov. Belarus State University , Minsk , Belarus
15.00
O2-20
 Simulation of metal and semiconductor single-electron 1D and 2D arrays. I.I. Abramov, A.L. Baranoff, A.M. Lavrinovich. Belarusian State University of Informatics and Radioelectronics, Minsk , Belarus
15.20
O2-21
 Mathematical modeling of a GaAs integrated microwave limiter. G.Z. Garber. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
15.40
O2-22
 A Comparison of Fitness Function Schedules for Multi-Objective Univariate Marginal Distribution Optimization of Mixed Analog-Digital Signal Circuits. L. Zinchenko , M. Radecker , F. Bisogno. Fraunhofer IAIS, Sankt Augustin, Germany
16.10
Coffee break
16.30 Entresol
POSTER SESSION I
Bottom hall.
Exhibition
19.00
Dinner
 
Thursday, October 4th 2007
8.15
Breakfast
Conference Hall
Session 14. Nanostructures Technologies I
Session Chairman: Anatoly Dvurechenskii, Institute of Semiconductor Physics SB RAS, Russia
9.00
L3-01
 INVITED: Silicon based quantum dot nanostructures: Physics and Technology. A.V. Dvurechenskii. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
9.30
O3-01
 Method of creation of monomolecular transistor with “overhanging” electrodes. I.V. Sapkov, E.S. Soldatov. Department of Physics, M.V. Lomonosov Moscow State University , Russia
9.50
O3-02
 Nanocrystal floating gate produced by CVD and thermal processing. A.G. Novikau 1 , P.I. Gaiduk 1 , E.N. Pshenichnij 2 , O.Yu. Nalivajko 2 , V.S. Malishev 2 and V.I. Plebanovich 2 . 1 .  Belarusian State University , Minsk , Belarus , 2 .  RPC Integral, Minsk , Belarus
10.10
O3-03
 The electroformed open sandwich-structures as elements for crossbar-nanoelectronics. V. Mordvintsev, S. Kudryavtsev V. Levin . Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia
10.30
O3-04
 Nanotechnology for fabricating full-epitaxial Nb-MgO-Nb tunnel junctions of sub-micron sizes. A. Chernych, G. Mikhailov, V. Vinnichenko. Institute of Microelectronics Technology & High Purity Materials, Russian Academy of Sciences , Chernogolovka, Moscow Region , Russia
Auditorium A
SYMPOSIUM QI-2007
Chairman: B. Novosadov
9.00
Q-16
 Quantum computation and hidden variables. V.V. Aristov and A.V. Nikulov, Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
9.20
Q-17
 Generation of entangled states in quasi-periodical ferroelectrics, S. Kulik. Moscow State University, Moscow, Russia
9.40
Q-18
 Limitations on ion trap quantum computing scheme . A. Burkov. Moscow State University, Moscow, Russia
10.00
Q-19
 Has it been proved that a superconducting loop could be flux qubit? A.A. Burlakov, V.L. Gurtovoi, A.V. Nikulov and V.A. Tulin. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
10.20
Q-20

Thermal entanglement in a case of two spin temperatures , M. Kutcherov Polytechnic Institute of Siberian Federal University
10.40
Q-21
 Will be announced later
Auditorium B
Session 15. Simulation and Modeling III
Session Chairman: Igor Abramov, Belarusian State University of Informatics and Radioelectronics , Belarus
9.00
L3-02
 INVITED: Focused ion beam source of a new type for micro- and nanoelectronics technologies. V.L. Varentsov. V.G.Khlopin Radium Institute, St. Petersburg , Russia
9.30
O3-05
 New Approach in the Development of Low Noise Microwave Semiconductor Devices. N.V. Alkeev 1 , S.V. Averin 1 , V.E. Lyubchenko 1 , A.A. Dorofeev 2 . 1.  Institute of Radioengineering & Electronics, RAS , Fryazino, Moscow region, Russia . 2.  Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
9.50
O3-06
 Two-band models of wave function formalism f о r resonant tunneling diodes. I.I. Abramov, I.A. Goncharenko, N.V. Kolomejtseva, A.A. Shilov. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
10.10
O3-07
 The prediction of nanostructure properties on the base of porous silicon. D. Bilenko, O. Belobrovaya, E. Jarkova, E. Khasina, I. Mysenko, D. Terin. Saratov State University , Saratov , Russia
10.30
O3-08
 Simulation of feature profile evolution during the cyclic etching/ passivation process of deep plasma Si etching by the cell-string hybrid method. A.S. Shumilov, I.I. Amirov. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
11.00
Coffee break
Conference Hall
Session 16. Nanostructures Technologies II
Session Chairman: Vitalii Aristov, Institute of Microelectronics Technology RAS, Russia
11.30
O3-09
 Influence of growth temperature and double-side doping on structural and electro-physical characteristics of the Al x Ga 1-x As/In y Ga 1-x As/GaAs nanosystem. I.A. Subbotin * , G.B. Galiev ** , R.M. Imamov * , M.A. Chuev *** . * Shubnikov Institute of Crystallography, RAS, Moscow , Russia . ** Institute of Ultra-High-Frequency Semiconductor Electronics, RAS, Moscow , Russia . *** Institute of Physics and Technology, RAS, Moscow , Russia
11.50
O3-10
 Model of diffusion limited aggregation for the effect of magnetic field on ion beam synthesis. G.G. Gumarov, V. Yu. Petukhov. Kazan Physical Technical Institute of Kazan Scientific Center, RAS, Kazan , Russia
12.10
O3-11
 Heterogeneous melting and participation of it in different micro- and nanotechnology processes. A.A. Buzdugan, S.A. Gavrilov, D.G. Gromov, E.N. Redichev, I.S. Chulkov. Moscow Institute of Electronic Technology, Zelenograd , Russia
12.30
O3-12
 Porous silicon the material for nano- and microstructurizations. V. Starkov. Institute of Microelectronics Tecnology, RAS, Chernogolovka , Russia
12.50
O3-13
 The approach to formation of interconnections with the low dimension for damascene technology. D.G. Gromov a , E.N .Redichev a , A.A. Golishnikov b , A.A. Buzdugan a , I.S. Chulkov a , R.M. Ammosov c . a Moscow Institute of Electronic Technology ( Technical University ), Moscow , Zelenograd , Russia . b ”Technological Center” Research and Production Complex at MIET, Moscow , Zelenograd , Russia . c State Research Institute of Physical Problems, Moscow, Zelenograd, Russia
Auditorium A
SYMPOSIUM QI-2007
Chairman: A. Burkov
11.30
Q-22
 Explicit Attack on the Key in Quantum Cryptography) Reaching the Theoretical Error Limit 11%, A.Timofeev, S.Molotkov, Moscow State University
11.50
Q-23
 Hidden variables in Bell model and dynamical chaos, Y.Bogdanov , Institute of physics and technology, Moscow, Russia
12.10
Q-24
 New Time-Phase Coding Method in Quantum Cryptography , A.Makkaveev, S.P.Kulik , S.Molotkov , Institute of physics and technology
12.30
Q-25
 3D-vortex labyrinth trapping in the near field of a solid-state microchip laser. A.Yu. Okulov . P.N.Lebedev Physical Institute of Russian Academy of Sciences Leninsky prospect 53, 119991 Moscow, Russia
12.50
Q-26
 Hidden time hypothesis and “no — protocol theorem”. P.V. Kurakin. Moscow Institute of Physics and Technology, Moscow, Russia
Auditorium B
Session 17. Micro- and Nanostructures Characterization I
Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS, Russia
11.30
O3-14
 Nanorelief elements in reference measures for scanning electron microscopy. S.A.  Darznek 1 , M.N. Filippov 2 , V.B. Mityukhlyaev 1 , Yu.A. Novikov 3 , Yu.V. Ozerin 4 , A.V. Rakov 3 , P.A. Todua 1 . 1. Center for Surface and Vacuum Research, Moscow , Russia . 2. N.S. Kurnakov General and Inorganic Chemistry Institute, RAS , Moscow , Russia . 3. A.M. Prokhorov General Physics Institute, RAS , Moscow , Russia . 4. Mikron Corporation, Moscow , Russia
11.50
O3-15
 Direct measurement of the linewidth of relief element on AFM in nanometer range. S.A. Darznek 1 , M.N. Filippov 2 , I.D. Lysov 1 , Yu.A. Novikov 3 , A.V. Rakov 3 , V.A. Sharonov 1 , P.A. Todua 1 . 1. Center for Surface and Vacuum Research, Moscow , Russia . 2. N.S. Kurnakov General and Inorganic Chemistry Institute, RAS , Moscow , Russia . 3. A.M. Prokhorov General Physics Institute, RAS , Moscow , Russia
12.10
O3-16
 Generalized dynamical theory of X-rays diffraction by curved perfect crystals. T. Chen. Moscow State Academy of Fine Chemical Technology, Moscow , Russia
12.30
O3-17
 The special features of Al x Ga 1-x N \ GaN heterostructures. K.L. Enisherlova 1 , R.M. Imamov 2 , I.A. Subbotin 2 , T.F. Rusak 1 , E.M. Temper 1 . 1. Federal state unitary enterprise «Science &Production enterprise «Pulsar», Moscow , Russia 2.  Institute of Crystallography RAS, Moscow , Russia
12.50
O3-18
 Characterization of Nanometer Structures for CMOS VLSIC Design Flow. D.Y. Adamov, Y.F. Adamov. LCC “Unique IC`s”, Moscow Russia
13.10
O3-19
 Fundamental and applied aspects of flicker-noise spectroscopy. M. Makoviychuk. Institute of Physics and Technology of the RAS, Yaroslavl Branch, Yaroslavl , Russia
13.30
Lunch
Conference Hall
Session 18. Plasma Physics and Technologies II
Session Chairman: Dorel Toma, Tokyo Electron  U.S. Holding
14.20
L3-03
 INVITED: Plasma etching of high aspect ratio structures: from complex chemistry to Bosh processing. V. Lukichev 1 , V. Yunkin 2 . 1.  Institute of Physics and Technology, RAS, Moscow , Russia . 2.  Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia
14.50
O3-20
 Plasma Si etching processes for microsystem technology. I.I. Amirov1, O.V. Morozov1, M.O. Izuimov1, B.A. Kalnov2, A.A. Orlikovsky2, K.A. Valiev2. 1. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia
15.10
O3-21
 Dry processes for formation of suspended Si bulk structures. O. V. Morozov 1 , A.V. Postnikov 1 , I.I. Amirov 1 , V.A. Kalnov 2 . 1.  Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia . 2.Institute of Physics and Technology RAS, Moscow , Russia .
15.30
O3-22
 Reactive sputtering of metal targets: influence of reactive atoms implantation. V.A. Marchenko. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
15.50
O3-23
 Investigation of impurity composition of atomic hydrogen beam formed by a low-pressure arc-discharge source. V.A. Kagadei , D.I. Proskurovski, and S.V. Romanenko. High Current Electronics Institute, SB RAS, Tomsk , Russia
16.10
O3-24
 Langmuir-Probe applications in monitoring of plasma etching. A.V. Miakonkikh , K.V. Rudenko and A.A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
Auditorium A
SYMPOSIUM QI-2007
14.20
Q-27
 Problem of detection of Rydberg atoms and quantum information processing, I.Riabtsev, D.Tretiakov, I.Beterov, V.Entin, Institute semiconductor physics, Siberian Dep.RAS
14.40
Q-28
 Quantum registers on the basis of inhomogeneous chains of nuclear spins, E. B. Fel’dman, Institute of Problems of Chemical Physics of RAS
15.00
Q-29
 Thermal pairwise entanglement in an inhomogeneous magnetic field , E. B. Fel’dman, A. N. Pyrkov, Institute of Problems of Chemical Physics of RAS, 142432, Chernogolovka, Moscow
15.20
Q-30
 Single molecule implantation as alternative of single atom (ion) implantation for Quantum Computer development , V. Zhukov, V. Maslov, Inst. of informatics nd automation, RAS
15.40
Q-31

Prequantum model with classical fields as hidden variables. A. Khrennikov. Univ. Vaxjo, Sweden
16.00
Q-32

Fair Sampling and Rotational Invariance in EPR experiments, G. Adenier, A. Khrennikov, Vaxjo University
16.20
Q-33
 Will be announced later
Auditorium B
Session 19. Micro- and Nanostructures Characterization II
Session Chairman: Akira Toriumi, University of Tokyo , Japan
14.20
O3-25
 Photolumenescence from the nanosized Si fabricated by modified PVD process. A.F. Alexandrov 1 , S-K. Koh 2 , E.A. Kralkina 1 , J.H. Lee 2 , N.E. Maslova 1 , V.B. Pavlov 1 , V.P. Savinov 1 , V.Yu. Timoshenko 1 , K.V. Vavilin 1 . 1. Physical faculty of M.V. Lomonosov Moscow State University, Moscow Russia . 2. P&I Corporation, Seoul , S.Korea
14.40
O3-26
 Luminescence of the intrinsic and extrinsic defects in hafnia films . A.A   Rastorguev 1 , V.I.   Belyi 1 , T.P.   Smirnova, L.V.   Yakovkina 1 , V.A.   Gritsenko 2 , M.V.   Zamorynskaya 3 , H.   Wong 4 . 1. Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk , Russia . 2.  Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 3. Ioffe Physicotechnical Institute, RAS, St. Petersburg , Russia . 4.   Electronic Engineering Department, City University of Hong Kong
15.00
O3-27
 Chemical Vapor Deposition and characterization of HfO 2 /Si composition. T.P. Smirnova 1 , F.A. Kuznetsov 1 , V.V. Kaichev 2 , S.A.  Beloshapkin 3 , V.I. Kosyakov 1 , L.V. Yakovkina 1 , M.S. Lebedev 1 . 1. Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk , Russia . 2. Boreskov Institute of Catalysis, SB RAS, Novosibirsk , Russia . 3 . Materials and Surface Science Institute, Limerick , Ireland
15.20
O3-28
 Falling down capacitance impedance under light illumination of MDS-structures with three-layer SiN x dielectrics. S.A.   Arzhannikova 1, a , M.D.   Efremov 1,b , A.A.   Voschenkov 1 , V.A.   Volodin 1 , G.N.   Kamaev 1 , D.V.   Marin 1 , V.S.   Shevchuk 1 S.A.   Kochubei 1 , A.A.   Popov 2 , Yu.A.   Minakov 2 . 1.  Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia 2.  Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
15.40
O3-29
 Al x GaN\GaN structure diagnostic by C-V characteristics method. K.L. Enisherlova, I.B. Gulyaev, V.G. Goryachev, A.U. Dorofeev, E.M. Temper, N.B. Gladisheva. Federal state unitary enterprise «Science &Production enterprise «Pulsar», Moscow , Russia
16.00
O3-30
 CVD Diamond with Electron Conductivity. The New Data on f.c.c. Carbon. M . B .  Guseva , V . G .  Babaev , V . V .  Khvostov , I . Yu .  Koniashin , Yu . A .   Korobov , N . D .  Novikov . Department of Physics, M.V.   Lomonosov Moscow State University , Moscow , Russia
16.20
Coffee break
16.30 Entresol.
POSTER SESSION II
Bottom hall.
Exhibition
19.30
Banquet
 
Friday, October 5th , 2007
9.00
Breakfast
10.00
Departure
Информация о IC MNE 2005 и QI 2005

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Фотографии с IC MNE 2005 и QI 2005

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Уважаемые участники конференции!
Напоминаем, что ICMNE-2005 — конференция SPIE. Официальный язык конференции английский.
Устные доклады (включая иллюстративные материалы) и постеры должны быть сделаны на английском.

 

ICMNE-2005 AND SYMPOSIUM QI-2005 SCIENTIFIC PROGRAM

(Final Edition)
(Oral Presentations)

Download files:
ICMNE-2005 Oral Presentations
ICMNE-2005 Posters
QI-2005 Oral Presentations

Monday, October 3th , 2005
9.00 — …
Registration & Accommodation
13.00 — 14.00
Lunch
Conference hall
Special Session
 
15.30
S-01
 FEI Company Instruments and Technologies for Analysis and Modification of Micro- and Nanoelectronic Devices. V. Ya. Shklover. Systems for Microscopy and Analysis, Ltd. Moscow , Russia
16.00
S-02
 CARL ZEISS Equipment for micro- & nano- electronics and E-beam Lithography. Alexander Uliyanenkov. Department of CARL ZEISS on SMT in Russia , NIS , and Eastern Europe.
16.30
S-03
 New Developments in NT-MDT Microscope Line. V.A. Bykov. NT-MDT Co., Moscow , Zelenograd , Russia.
17.00
S-04
 Development of Components for New Generation of Radio-Electronic Modules and Subsystems. A.G. Vasiliev. Federal State Unitary Enterprise SPE «Pulsar».
17.30
S-05
 Application of Base Gate Arrays at Development of Equipment. A.N. Saurov, A.N. Denisov, V.V. Konyachin. State Manufacturing Complex “Technological Centre” MIET, Moscow , Russia.
18.00
Welcome Party
19.00
Dinner
 
Tuesday, October 4th , 2005
 
Conference hall
8.00
 Breakfast
8.40
Welcome remarks

E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow
K.A. Valiev, Program Chair, IPT RAS, Moscow
Plenary Session
8.50
L1-1
 INVITED: Materials Inflation for Nano Devices. H. Ryssel. Fraunhofer Institute of Integrated Systems and Device Technology (IISB), Erlangen , Germany
9.30
L1-2
 INVITED: Advanced silicon-based micro- and nanoelectronics: physics and technology. A.L.Aseev and I.G.Neizvestny. Institute of Semiconductor Physics SD RAS, Novosibirsk , Russia
10.10
L1-2D
 Ultra Shallow Junction formation by Plasma Doping Technologies. Hiroyuki Ito. UJT Lab. Inc. , Osaka, Japan.
10.40
L1-3
 INVITED:Quantum description of nanotransistors. Vladimir F. Lukichev. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
11.10
L1-4
 INVITED:Microelectronics Below 10 nm: Prospects and Problems. Konstantin K.   Likharev. Stony Brook University, Stony Brook , NY 11794-3800 , U.S.A
11.40 — 12.00
Coffee break. Winter garden
Conference Hall
Session 1. Sub-100 nm Lithography
12.00
O1-01
 Research activity in the field of projection EUV-Lithography within the framework of the Russian program. S.V. Gaponov, E.B. Kluenkov, A.Ya. Lopatin, V.I. Luchin, N.N. Salashchenko, N.I. Chkhalo. Institute for Physics of Microstructures RAS, 603600, GSP-105, Nizhny Novgorod , Russia
12.30
O1-02
 Concept of EUV-lithography tool for scientific application. R. P. Seisyan, N. A. Kaliteevskaya, S. G. Kalmykov. A. F. Ioffe Physico-Technical Institute of the Russian Academy of Science, St. Petersburg , Russia
12.50
O1-03
 Inorganic thin films as potential photoresist in VUV and EUV ranges . N.A.   Kaliteevskaya, S.I. Nesterov, R.P. Seisyan. A.F. Ioffe Physico-Technical Institute of the Russian Academy of Science, St. Petersburg , Russia
13.10
O1-04
 Sources of radiations on the basis of capillary discharges. V.A. Burtsev, E.P. Bolshakov, Н . В . Kalinin, V.A. Kubasov, R.F. Kurunov, V.G. Smirnov, V.I. Chernobrovin. Efremov Scientific Research Institute of Electrophysical Apparatus , St. Petersburg
13.30 — 14.30
Lunch
Conference Hall
Session 2. Nanodevices and Nanostructures I
14.30
L1-5
 INVITED:SOI nanotransistors: ultimate dimensions and fundamental limits. V. Popov. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia.
15.00
O1-05
 Poly-Si and FUSI gate electrodes on HfO 2 high-k gate dielectrics: in-situ characterization of growth, thermal stability and electronic structure A. Zenkevich 1 , Yu.Yu. Lebedinskii 1 , E.P. Gusev 2 , M. Gribelyuk 3 and V.N. Nevolin 1 1. Moscow Engineering Physics Institute, Russia ,2. IBM Semiconductor Research and Development Center , New York , USA , 3. IBM Systems and Technology Division (Microelectronics Group), Hopewell Junction , NY 12533 , USA
15.30
O1-06
 Quantum simulation of a silicon field-effect transistor. V. Vyurkov, A. Sidorov, and A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
15.50
O1-07
 Spin relaxation of holes in Ge quantum dots. A. F. Zinovieva, A. V. Nenashev, A. V. Dvurechenskii. Institute of Semiconductor Physics, RAS, Novosibirsk , Russia
16.10
O1-08
 Heterostructures with the modulated conductivity. V. Gergel 1 , V. Kurbatov 2 , M. Rzaev 2 , A. Pogosov 2 , N. Sibeldin 2 , T. Burbaev 2 , M. Yakupov 1 . 1. Institute for Radio-Engineering and Electronics, Russian Academy of Science , Moscow , Russia , 2. P.N. Lebedev Physical Institute, Russian Academy of Science , Moscow , Russia
Room A.
Session 3. MEMS & Sensors
14.30
O1-09
 High-Speed bistable MEMS commutators. E.G. Kostsov, A.A. Kolesnikov. Institute of Automation and Electrometry, Russian Academy of Sciences , Novosibirsk, Russia
14.50
O1-10
 Probe metrology of MEMS-structures. N. Balan 1 , S. Gavrin 2 , A. Gruzdev 2 , S. Morozov 2 1. Angstrem Center Nanotech, Moscow , Russia 2. Moscow Engineering Physics Institute ( State University ) , Moscow , Russia
15.10
O1-11
 Analysis of Microelectromechanical Gyroscope Technological Faults. B. Konoplev, I. Lysenko. Taganrog State University of Radio-Engineering, Taganrog, Russia
15.30
O1-12
 Formation of released MEMS structures using the process of deep plasma Si etching. O.V. Morozov, I.I. Amirov. Institute of Microelectronics and Informatics RAS, Yaroslavl , Russia
15.50
O1-13
 The development of simulation approach for the modeling of the piezoresistive effect in microsystems engineering elements. T. Kroupkina , O.   Pankratov , A. Pogalov. Moscow Institute of Electronic Engineering, Moscow , Russia
16.10
O1-13D

Mems Development in Russia . Petr P. Maltsev. Chief Editor of “ NANO – and MYCROSYSTEMS TECHNIQUES” Magazine, Moscow , Russia.
Room B.
Session 4. Photonics and Optoelectronics
14.30
O1-14
 From diffraction grating to photonic crystal: opaque bands formation. M. Barabanenkov * , Yu. Barabanenkov, S. Nikitov. * Institute of Microelectronics Technology and superpure materials, RAS, Chernogolovka, Russia, Institute of Radioengineering and Electronics, RAS, Moscow, Russia
14.50
O1-15
 Formation of two-dimensional photonic crystals by deep anodic etching. E. Yu. Gavrilin, V. V .  Starkov, A. F. Vyatkin, and M. A. Knyazev. Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia
15.10
O1-16
 Formation of near-field optical vortexes at nanostructured metallic films A. A. Ezhov, S. A. Magnitskii, N. S. Maslova, D. A. Muzychenko, A. A. Nikulin, V.I. Panov. Faculty of Physics of M.V. Lomonosov Moscow State University , Moscow , Russia
15.30
O1-17
 Microstructured Optical Fibers – New Tool For Telecommunications. M. Ryabko * , Yu. Chamorovskii, I. Lissenkov, S. Nikitov Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009 Moscow , Russia
15.50
O1-18
 Optical properties of empty and filled hollow pin structures. M. Barabanenkov, V. Starkov. Institute of Microelectronics Technology and high-pure materials, Russian Academy of Sciences , Chernogolovka , Russia
16.10
O1-19
 The growth features of epitaxial Pb 1-X Mn X Se films and photosensitive p-n junctions on their basis. I.R. Nuriyev, A.M. Nazarov, R.M. Sadygov, M.B. Gadzhiev Institute of Physics of the National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
16.30 — 17.00
Coffee break. Winter garden
Conference Hall
Session 5. Devices and ICs
17.00
O1-20
 X-band SPDT Switch MMIC based on directional coupler key. V.G. Mokerov, D.L. Gnatyuk, A.P. Lisitskii. Institute of UHF Semiconductor Electronics, Russian Academy of Sciences , Moscow , Russia
17.20
O1-21
 Integrated logic elements based on tunneling connected quantum wells. B. Konoplev 1,2 , E. Ryndin 2 . 1. Taganrog State University of Radio Engineering, Taganrog , Russia . 2. Laboratory of Nanoelectronics, South Scientific Center of Russian Academy of Science , Taganrog , Russia
17.40
O1-22
 The elementary adiabatic logic gates for digital information processing systems. V. Staroselsky 1 , V. Losev 1 1. Moscow State Institute of Electrinic Engenering, Moscow , Russia
18.00
O1-23
 Si-electrode of a fuel cells in the integral design V. Starkov, S. Shapoval. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
18.20
O1-24
 An automatic synthesis method of compact models of integrated circuit devices based on equivalent circuits. I.I. Abramov. Belarusian State University of Informatics and Radioelectronics, Minsk , Belarus
18.40
O1-24D
 Non-volatile electrically reprogrammable memory on self-forming conducting nanostructures. V. Mordvintsev, S. Kudryavtsev , V. Levin. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia.
Room A.
Session 6. Thin Films
17.00
O1-25
 Morphology and structure of PZT films. M. V. Silibin, V. M. Roshin, V. B. Yakovlev, M. S. Lovygina. Moscow Institute of Electronic Technologies ( Technical University ), 124498 Moscow , Zelenograd , Russia
17.20
O1-26
 Degradation kinetics of ALD grown HfO 2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS. Yu.Yu. Lebedinskii 1 , A. Zenkevich 1, N. Barantsev 1 , G. Scarel 2 , M. Fanciulli 2 and V.N. Nevolin 1 . 1. Moscow Engineering Physics Institute, Russia . 2. N ational Laboratory”Materials and Devices for Microelectronics”, INFM/CNR, Italy
17.40
O1-27
 The analogy of models of solid-phase epitaxial growth and atomic rearrangement at misfit strain relaxation i n epitaxial heterostructures. Vyatkin A. F. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
18.00
O1-28
 Formation of Conductive Structures in Insulate Layers by Selective Removal of Atoms technique. B. Gurovich 1 , A. Domantovsky 1 , E. Kuleshova 1 , E. Ol’shansky 1 , K. Prikhodko 1 , Y. Lunin 2 . 1. Russian Research Center “Kurchatov Institute”, Moscow, Russia 2. Institute for System Studies, Russian Academy of Sciences, Moscow, Russia
18.20
O1-29
 Effects of negative differential resistance in TlIn 1-x Gd x Se 2 films. E.M. Gojaev, A.M. Nazarov*, K.Dj. Gulmammadov, S.S. Osmanova. Azerbaijan Technical University , Baku , Azerbaijan . * Institute of Physics of the National Academy of Sciences of Azerbaijan , Baku , Azerbaijan
Room B.
Session 7. Superconducting Structures
17.00
L1-6
 INVITED:Josephson junctions with ferromagnetic materials. M. Yu. Kupriyanov 1 , A.A.   Golubov 2 . Institute of Nuclear Physics , Moscow State University , Moscow , Russia . 2. Faculty of Science and Technology, University of Twente , The Netherlands
17.30
O1-30
 Nonequlibrium properties of SIS’IS structure under microwave irradiation. A.V. Semenov 1 , I.A.   Devyatov 2 , M.Yu.   Kupriyanov 2 . 1. Department of Physics, Moscow State Pedagogical University, Moscow , Russia . 2. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University , Moscow , Russia
17.50
O1-31
 Out-of substrate plane orientation control of thin YBa 2 Cu 3 O x films on NdGaO 3 tilted-axes substrates. Peter B. Mozhaev 1 , Julia E. Mozhaeva 1 , Jorn B. Hansen 2 , Claus S. Jacobsen 2 , Igor K. Bdikin 3 , Iosif M. Kotelyanskii 4 , Valery A. Lusanov 4 , Andrey L. Kholkin 3 . 1. Institute of Physics and Technology RAS, Moscow , Russia 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark .3. CICECO, University of Aveiro , Aveiro , Portugal 4. Institute of Radio Engineering and Electronics RAS, Moscow , Russia
18.10
O1-32
 Calibration of quantum detector of noise based on a system of asymmetric superconducting loops. V.L. Gurtovoi, S.V. Dubonos, A.V. Nikulov, N.N. Osipov and V.A. Tulin. Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia
18.30
O1-32D
 Nonuniform magnetic field of ferromagnetic nanoparticle as source for control transport properties of superconductor structures. A.A. Fraerman1, B.A. Gribkov1, S.A. Gusev1, E. Il’ichev2, A.Yu. Klimov1, Yu.N. Nozdrin1, G.L. Pakhomov1, V.V. Rogov1, R. Stolz2, D. Y. Vodolazov1 and S.N. Vdovichev1 1. Institute for Physics of Microstructures RAS, GSP 105, 603950 Nizhny Novgorod, Russia, 2. Institute for Physical High Technology, Jena, Germany.
19.00
Dinner
 
Wednesday, October 5th 2005
8.15
Breakfast
Conference Hall
SYMPOSIUM QI-2005
9.00
Q-01
 K.A.Valiev (FTIAN) Introductory remarks. Review of quantum informatics: results and perspectives
9.30
Q-02
 V.Akulin (Univ. Orsay, invited) Entanglement distribution along 2-dimensional lattice of qubits
10.00
Q-03
 A.S.Holevo (MIAN, invited), Photon localisation: observed location and uncertainty relations
10.30
Coffee break
Conference Hall
Session 8. Nanodevices and Nanostructures II
10.50
O2-01
 Electronic transport through silicon nanocrystals embedded in SiO 2 matrix. M.D. Efremov, S.A. Arzhannikova, G.N. Kamaev, G.A. Kachurin, A.V. Kretinin, V.V. Malutina?Bronskaya, D.V. Marin, V.A. Volodin, S.G. Yanovskaya. Institute of Semiconductor Physics, RAS , Novosibirsk , Russia
11.10
O2-02
 Calculation of the secondary charge carriers current in submicron channel MOSFETs at stress regimes of operation. V.M. Borzdov, F.F. Komarov, O.G. Zhevnyak, V.O. Galenchik, D.V. Pozdnyakov, A.V. Borzdov. Belarus State University , Minsk , Belarus
11.30
O2-03
 Novell flash devices based on high-k dielectrics. V.A. Gritsenko, K. A. Nasyrov. Institute of Semiconductor Physics, Novosibirsk
11.50
O2-04
 Formation of silicon-on-insulator structures with low surface roughness. F. Komarov, O. Milchanin, E. Boiko . Institute of Applied Physics Problems, Belarusian State University , Minsk , Belarus
12.10
O2-05
 Hopping conductivity as a predominant mechanism of current transport in thermally oxidized nanoporous silicon. L.V. Grigoryev 1 , I.M. Grigoriev 1 , V. Zamoryanskaya 2 , A.E. Kalmykov 2 , V.I. Sokolov 2 , L.M. Sorokin 2 . 1. V.A.Fock Institute of Physics, Saint-Petersburg State University , Russia 2. A.F.Ioffe Physico-Technical Institute, Saint-Petersburg , Russia
12.30
O2-06
 Transport phenomena in interference transistor. A.A. Gorbatsevich 1 , V.V. Kapaev 2 . 1. Moscow Institute of Electronic Technology ( Technical University ), Moscow , Russia 2. P.N. Lebedev Physical Institute, Moscow , Russia.
Room A.
SYMPOSIUM QI-2005
11.00
Q-04
 L.E.Fedichkin (Clarkson University, invited), Decoherence models for spin ensembles
11.30
Q-05
 S.Ya.Kilin (Inst.Physics, Minsk, invited), To be determined
12.00
Q-06
 A.Khrennikov (Univ.Vaxio, Sweden, invited), Quantum mechanics as projection of classical statistical mechanics
12.30
Q-07
 M.Mensky (FIAN), Quantum-computer toy model of consciousness according to the extended Everett conception
Room B.
Session 9. Magnetic Micro- and Nanostructures
11.00
O2-07
 Sd-exchange switching in magnetic junctions having non-pinned current carrier spins . E.M. Epshtein, Yu.V.   Gulyaev, P.E.   Zilberman. Institute of Radio Engineering and Electronics of RAS, Fryazino , Russia
11.20
O2-08
 Moessbauer spectra of nanomagnets within rotating hyperfine field. N. P. Aksenova , M. A. Chuev. Institute of Physics and Technology , RAS, Moscow , Russia
11.40
O2-09
 Magnetoresistance Of Coupled Quantum Wells In Quantizing Magnetic Field. V.E. Kaminskii 1 , G.B. Galiev 1 , V.G. Mokerov 1 , I.S. Vasil’evskii 2 , R.A. Lunin 2 , V.A. Kul’bachinskii 2 . 1 Institute of UHF Semiconductor Electronics, Russian Academy of Sciences , Moscow . 2 Moscow State University, Department of Low Temperature Physics, Moscow , Russia
12.00
O2-10
 Two-Dimensional Magnonic Crystals Based on Ferromagnetic Films. Yu.A. Filimonov 1 , Yu.V.  Gulyaev , S.A.  Nikitov * , S.V. Vysotskii 1 . Institute of Radioengineering and Electronics, Russian Academy of Sciences, Moscow, Russia 1 Institute of Radioengineering and Electronics, Russian Academy of Sciences, Saratov Branch, Russia
12.20
O2-11
 Exchange interactions in a ferrimagnetic ring. V. Kostyuchenko 1 , M. Kostyuchenko 2 . Institute of Microelectronics and Infirmatics, Russian Academy of Sciences , Yaroslavl , Russia . 2. Yaroslavl State Technical University , Yaroslavl , Russia
12.40
O2-11D
 MFM tip induced remagnetization effects in ferromagnetic sub-micron sized particles. B.A.Gribkov, S.A.Gusev, A.A.Fraerman, I.R.Karetnikova, V.L.Mironov, I.M.Nefedov, N.I.Polushkin, I.A.Shereshevsky, S.N.Vdovichev. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
13.00
Lunch
Conference Hall
Session 10. Plasma Technologies
14.00
O2-12
 Precision Plasma Technologies: Equipment and Processes. A.A. Orlikovsky, K.V. Rudenko, S.N. Averkin. Institute of Physics & Technology RAS, (FTIAN), Moscow , Russia
14.20
O2-13
 A self-consistent model for the HCl dc glow discharge: plasma parameters and active particles kinetics. A. Efremov, V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo , Russia
14.40
O2-14
 Ultra shallow p + -n junctions in Si produced by plasma immersion ion implantation. К .  Rudenko 1 , S. Averkin 1 , V. Lukichev 1 , A. Orlikovsky 1 , A. Pustovit 2 , A. Vyatkin 2 . 1. Institute of Physics & Technology, RAS, Moscow , Russia . 2. Institute of Microelectronics Technology and High-Purity Materials, RAS, Chernogolovka , Russia
15.00
O2-15
 Plasma enhanced chemical vapor deposition of multifunctional nanocrystalline films of silicon carbornitride. Nadezhda   I.  Fainer*, Yuri M. Rumyantsev, Marina L. Kosinova, Evgeni A. Maximovski, Fedor A. Kuznetsov. Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk , Russia
15.20
O2-16
 Ionized PVD with an electron cyclotron resonance plasma source. N. Poluektov, V. Kharchenko, I.  Kamyschov, Yu. Tsar’gorodsev. Moscow State Forestry University , Mytischi, Moscow Region , Russia
15.40
O2-17
 Simulation of the feature profile evolution in during deep plasma etching of Si by the cell-string hybrid method. A.S. Shumulov, I.I. Amirov. Institute of Microelectronics and Informatics RAS, Yaroslavl , Russia
Room A.
SYMPOSIUM QI-2005
14.00
Q-08
 Pavel Kurakin , George Malinetskii , Howard Bloom ( Keldysh Institute of Applied Mathematics , New York University ), Dialogue model of quantum dynamics
14.20
Q-09
 F.Ablayev, A.Gainutdinova (Kazan State Univ., Russia), On complexity properties of quantum uniform and nonuniform automata
14.40
Q-10
 A.Y.Okulov (FIAN), Quantum billiards with nonlinear boundaries
15.00
Q-11
 Yu.I.Bogdanov, R.F.Galeev, S.P.Kulik, G.A.Maslennikov, and E.V.Moreva (MSU), Statistical Reconstruction of Biphoton Polarization States.
15.20
Q-12
 S.N.Molotkov, A.V.Timofeev, A.P.Makkaveyev, D.I.Pomozov (IFFT, FTIAN), New algorithms for the key purification in quantum cryptography
15.40
Q-13
 Y.I.Ozhigov, I.N.Semenihin, A.S.Burkov, A.V.Damir (MSU, FTIAN)
Room B.
Session 11. Simulation and Modeling I
14.00
O2-18
 INVITED: Actual Problems of Modeling in Micro- and Nanoelectronics. R.V. Goldstein, V.V. Ivin, V.P. Kudrya, T.M. Makhviladze, A.Kh. Minushev, K.P.  Novoselov , M.E.  Sarychev. Institute of Physics and Technology, Russian Academy of Sciences; JSC SOFT-TEC, Moscow , Russia
14.20
O2-19
 Complex simulation of electron process of deep submicron MOSFET based on energy balance equation. V.A. Gergel 1 , M.N. Yakupov 2 . 1. The Institute for Radio-Engineering and Electronics, RAS, Moscow . 2. JSC Mikron, Zelenograd , Russia
14.40
O2-20
 Nonequilibrium Diagrammatic Technique for Nanoscale Devices. G. I. Zebrev. Department of Microelectronics, Moscow Engineering Physics Institute, Russia
15.00
O2-21
 Monte Carlo simulation of device structures with one-dimensional electron gas. V.M. Borzdov, F.F. Komarov, V.O. Galenchik, D.V. Pozdnyakov, A.V. Borzdov, O.G. Zhevnyak. Belarus State University , Minsk , Belarus
15.20
O2-22
 Process and device simulation: problems of effective use for microelectronics and microsystems engineering products design. Y. Chaplygin, M. Korolev, T. Kroupkina. Moscow Institute of Electronic Engineering, Moscow , Russia
15.40
O2-23
 Modeling of spin polarization in InAs/GaSb quantum wells under a longitudinal current. A. Zakharova 1 , I.  Lapushkin 1 , S.T. Yen 2 , K. Nilsson 3 , K.A. Chao 3 . 1. Institute of Physics and Technology of RAS, Russia ; 2. Department of Electronics Engineering, National Chiao Tung University , Taiwan ; 3. FTT, Department of Physics, Lund University , Sweden
16.10
Coffee break
16.30 Entresol.
POSTER SESSION I
Bottom hall.
Exhibition
19.00
Dinner
 
Thursday, October6 th 2005
8.15
Breakfast
Conference Hall
Session 12. Nanostructures Technologies I
9.00
L3-7
 INVITED: NANOFAB: The base, multipurpose, research and technological complex . V.A. Bykov , D.V. Veryovkin , NT-MDT Co, State Research Institute of Physical Problems, 124460, Moscow, Russia
9.30
O3-01
 Silicon Nanoclusters in SiN x Matrix: Formation by LF PECVD and Properties. A.E. Berdnikov 1 , A.A. Popov 1 , V.D. Chernomordick 1 , M.D. Efremov 2 , V.A. Volodin 2 , D.V. Marin 2 , N.V. Vishnyakov 3 , I.G. Utochkin 3 . 1. Institute of Microelectronics and Informatics Russian Academy of Sciences, Yaroslavl , Russia . 2. Institute of Semiconductors Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk , Russia . 3 Ryazan state radiotechnical academy, Ryazan , Russia
9.50
O3-02
 Formation of ordered arrays of Ag nanowires and nanodots on Si(557) surface. R. Zhachuk, S. Teys, A. Dolbak, B. Olshanetsky. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia
10.10
O3-03
 Synthesis of nanowires by pulsed current electrodeposition. A. N. Belov, S. A. Gavrilov. Moscow Institute of Electronic Technologies ( Technical University ), 124498 Moscow , Zelenograd , Russia
10.30
O3-04
 The relationship between magnetoresistance and magnetomechanical effects in electrodeposited nickel nanocontacts. A. Bukharaev, P. Borodin, D. Biziaev, R. Gatiiatov. Zavoisky Physical Technical Institute of Russian Academy of Sciences, Kazan , Russia
Room A.
SYMPOSIUM QI-2005
9.00
Q-14
 V.V.Aristov, A.V.Nikulov (Inst., microelectronics techn.) Could EPR correlation be in superconducting structures
9.20
Q-15
 I.I.Ryabtsev, D.B.Tretyakov, I.I.Beterov, V.M.Entin (Institute of Semiconductor Physics ), Application of Rydberg atoms to quantum computing
9.40
Q-16
 G.Yu. Kryuchkyan and H.H. Adamyan (Yerevan State Univ.), Non-stationary entanglement and squeezing beyond the standard limits
10.00
Q-17
 A. Kalachev, V. Samartsev (Kazan Physical-Technical Institute) Quantum storage and quantum calculations using subradiant states of atomic ensembles
10.20
Q-18
 Yu.I. Bogdanov (FTIAN), Quantum tomography of arbitrary spin states of particles: root approach
10.40
Q-19
 A.A.Kokin (FTIAN), The antiferromagmet-based nuclear spin quantum register in inhomogeneous magnetic field
Room B.
Room B. Session 13. Simulation and Modeling II
9.00
O3-05
 Modeling of diffusion of As i mplanted in Si at low energies and high fluences. F.F. Komarov 1 , O.I. Velichko 2 , A.M. Mironov 1 , V.A. Tsurko 3 , G.M. Zayats 3 . 1. Institute of Applied Physics Problems, Belarusian State University , Minsk , Belarus , 2. Belarusian State University on Informatics and Radioelectronics, Minsk , Belarus 3. Institute of Mathematics , Academy of Sciences of Belarus , Minsk , Belarus
9.20
O3-06
 Atomic mechanisms of cluster diffusion on metal surface. O.S. Trushin 1 , P. Vikulov 1 , V.V. Naumov 1 , A. Karim 2 , A. Kara 2 and T. Rahman 2 . 1. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia , 2. Kansas State University , Manhattan , KS , USA
9.40
O3-07
 Possibility of non-equilibrium phase transitions in the atmosphere of own silicon defects . E.P. Svetlov-Prokop’ev 1 , S.P. Timoshenkov 2 , V.V. Dyagilev 2 , V.V. Kalugin 2 . 1. State Scientific Center RF Institute for Theoretical and Experimental Physics, Moscow , Russia 2. Moscow Institute of Electronics Technology ( Technical University ), Moscow , Russia
10.00
O3-08
 Melting behavior of metals in matrix of porous anodic alumina. A. N. Belov 1 , S. A. Gavrilov 1 , D. A. Kravchenko 1 , D. G. Gromov 1 , A. S. Malkova 1 , A. A. Tikhomirov 2 . 1. Moscow Institute of Electronic Technologies ( Technical University ), Zelenograd , Russia , 2. NT-MDT Corporation,, Zelenograd , Russia
10.20
O3-09
 On the Surface Pressure and the Fragmentation of a Nanocrystal. M.N. Magomedov. Institute for Geothermal Research of Daghestan S cientific Centre RAS , Makhachkala , Russia
11.00
Coffee break
Conference Hall
Session 14. Nanostructures Technologies II
11.30
O3-10
 Prospects of Semiconductor Vacuum Technologies in Space. V.V. Blinov 1 , A.I. Nikiforov, O.P. Pchelyakov 1 , L.V. Sokolov 1 , A.I. Ivanov 2 , I.V. Tchurilo 2 , V.V. Teslenko 2 , L.L. Zvorykin 2 . 1. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 2. Rocket Space Corporation «Energiya», Korolev , Russia
11.50
O3-11
 Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on SiO 2 films. A.V. Dvurechenskii 1 , P.L. Novikov 1 , Y. Khang 2 , Zh.V. Smagina 1 , V.A. Armbrister 1 , A.K. Gutakovskii 1 . 1. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia , 2. Samsung Electronics Co, Samsung Advanced Institute of Technology , Yongin-Si , Korea
12.10
O3-12
 Diffusion and phase formation in ternary silicate systems framed by an ion bombardment . S. Krivelevich, E. Buchin, Yu. Denisenko, R. Selukov. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia
12.30
O3-13
 Forming Matrix Nanostructures in Silicon . A.V. Barkhudarov 1 , S.A.  Gavrilov 1 , A.A. Golishnikov 2 , M.G. Putrya 1 . 1. Mosc ow Institute of Electronic Technology (MIET), Zelenograd , Russia 2. SMC “Technological Center” MIET, Zelenograd, Russia
12.50
O3-14
 The combined electromagnetic mirror as the probable breakthrough tool in electron and ion nanotechnology. V. A. Zhukov 1 , A. V. Zavyalova 2 . 1. .Institute for Informatics and Automation, Russian Academy of Sciences, Saint-Petersburg, Russia . 2. Vavilov State Optical Institute, Saint-Petersburg , Russia
Room A.
SYMPOSIUM QI-2005
11.30
Q-20
 V.L. Kurochkin, I.I.Ryabtsev, A.V.Zverev, V.K.Ovchar, I.G.Neizvestny, S.Moon, B.S.Bae, H.J.Shin, J.B.Park, C.W.Par k (Inst. semiconductor physics, Korea inst science technology), Experimental setup for long-distance quantum cryptography via optical fiber lines
11.50
Q-21
 M. Kutcherov ( Krasnoyarsk State Technical University ), Thermal entanglement in a case of two spin temperatures
12.10
Q-22
 S.N. Dоbryakov , V.V.Privezentsev (N.N.Semenov Institute of chemical physics , FTIAN), Simulation of EPR spectra of the singlet and triplet states of zinc-phosphorus two-spin system in silicon
12.30
Q-23
 H. Thapliyal, M.B.Srinivaz (Int.Inst.informational technology, Hyderabad), Novel reversible TSG gate and its applications for designing components of primitive reversible/quantum ALU
Room B.
Session 15. Micro- and Nanostructures Characterization I
11.30
O3-15
 Low frequency current noise spectroscopy as a tool to study disordered materials . M.I.   Makoviychuk 1 , A.L. Chapkevich 2 , E.O. Parshin 1 . 1. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia 2. Moscow Committee of Science and Technologies, Moscow , Russia
11.50
O3-16
 Compensation Technique in Scanning Capacitance Microscopy. V. V. Polyakov 1 , I.  V. Myagkov 2 , G. A. Tregubov 2 , An. V. Bykov 3 . 1. Moscow Institute of Physics and Technology , Russia . 2. State Research Institute for Physical Problems, Moscow , Russia . 3. NT-MDT Company, Moscow , Russia
12.10
O3-17
 Simultaneous fitting of several X-ray rocking curves from different crystallographic planes of multilayer heterostructures. M. A. Chuev 1 , A. A. Lomov 2 , R. M. Imamov 2 , I.  A. Ivanov 1 . 1. Institute of Physics and Technology , Russian Academy of Sciences, 117218 Moscow , Russia 2. A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences , Moscow , Russia
12.30
O3-18
 Poly- and nanocrystalline diamond films: optical, electrical and thermal properties. V.   G.   Ralchenko 1 , A.   F.   Popovich 1 , A.V.   Saveliev 1 , I.I.   Vlasov 1 , A.V.   Khomich 2 , V.I.   Kovalev 2 , G.V.   Chucheva 2 , A.D.   Bozhko 3 , M.V.   Chukichev 3 , A.G.   Kazanskyi 3 , F.X.   Lu 4 , W.M.   Mao 4 , G.C.   Chen 4 . 1. General Physics Institute, Russian Academy of Sciences , Moscow , Russia . 2. Institute of Radiotechnics and Electronics, Russian Academy of Sciences , Fryazino , Russia . 3. M.V.Lomonosov Moscow State University , Department of Physics , Russia 4. School of Materials Science and Engineering University of Science and Technology Beijing , P.R. China
13.30
Lunch
Conference Hall
Session 16. Micro- and Nanostructures Characterization II
14.20
O3-19
 Linear Sizes Measurements of Relief Elements with the Width Less Than 100 nm on a SEM. Yu.A. Novikov 1 , A.V. Rakov 1 , P.A. Todua 2 . 1. General Physics Institute, Russian Academy of Science , Moscow , Russia . 2. Center for Surface and Vacuum Research, Moscow , Russia
14.40
O3-20
 Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface. L.K. Orlov, Zs. Horvath**, A.S. Lonchakov*, M.L. Orlov. IPM RAS, Nizhny Novgorod, * ) IMP UrB RAS, Ekaterinburg , Russia ; ** ) RITP&MS, HAS, Budapest , Hungar y
15.00
O3-21
 Spectroscopic ellipsometry based on binary modulation polarization. V.I.   Kovalev, A.I.   Rukovishnikov. Institute of Radio Eng. & Electronics, Russian Academy of Sciences, Fryazino, Russia
15.20
O3-22
 Analysis of functionalities basic modes in Atomic Force Microscopy. S. Krasnoborodko, V. Shevyakov, A. Tihomirov. Moscow Institute of Electronic Equipment ( Technical University ), Zelenograd , Russia
15.40
O3-23
 Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods. N. Yarykin 1 , R. Zhang 2 , G. Rozgonyi 2 . 1. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia, 2.Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, USA
16.00
O3-24
 Structural and nonlinear-optical studies of ultrathin Si/SiO 2 multiple quantum wells. A.A. Lomov 1 , A.G. Sutyrin 1 , D. Yu. Prohorov 1 , F.A. Pudonin 2 , T.V. Dolgova 3 , A.A. Fedyanin 3 , and O.A. Aktsiperov 3 . 1. Institute of Crystallography of RAS, Moscow , Russia . 2. Lebedev Physical Institute of RAS, Moscow , Russia 3.Department of Physics, Moscow State University , Russia
Room A.
SYMPOSIUM QI-2005
14.20
Q-24
 A.Yu. Bogdanov, Yu.I. Bogdanov, K.A. Valiev (FTIAN), Analysis of localized Schmidt decomposition modes and of entanglement in atomic and optical quantum systems with continuous variables
14.40
Q-25
 V.P.Gerdt, V.Severianov (JINR) An algorithm for constructing polynomial systems whose solution space sharacterizes quantum circuits
15.00
Q-26
 A.Mandilara (Washington University), Description of entanglement with nilpotents polynomials
15.20
Q-27
 V. Vyurkov, L. Gorelik, and A.Orlikovsky (FTIAN, Chalmers Univ.), Measurement of a spin qubit array with a quantum wire
15.40
Q-28
 V. Vyurkov, I. Semenikhin, L.Fedichkin, and A. Khomyakov (FTIAN, Clarkson Univ.) Effect of image forces on a charge qubit operation
16.00
Q-29
 A.Tsukanov (FTIAN), To be deternimed
Room B.
Session 17. Defects and Impurities in Semiconductors
14.20
O3-25
 Low-temperature atomic hydrogen annealing of ion-implanted Si layers. V. Kagadei 1 , E. Nefyodtsev 2 , R. Groetzschel 3 , S. Romanenko 2 , A. Markov 2 . 1. Research Institute of Semiconductor Devices, Tomsk , Russia 2. Institute of High Current Electronics , Russian Academy of Sciences , Tomsk , Russia 3. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, Dresden , Germany
14.40
O3-26
 Determination of oxygen and carbon in silicon monocrystals by radiative-luminescent method. A.V.   Yukhnevich. Research Institute for Physico-Chemical Problems of Belarussian State University , Minsk , Belarus
15.00
O3-27
 Impurity-defect interaction at the Yb + implanted silicon annealing. D.I. Brinkevich, V.S. Prosolovich and Yu.N. Yankovski. Belorussian State University , Minsk , Belarus
15.20
O3-28
 Characteristics of the implant-isolated GaAs layers after annealing. F.F. Komarov 1 , A.M. Mironov 1 , P. Zukowski 2 . 1. Belarussian State University , Minsk , Belarus , 2. Lublin University of Technology , Lublin , Poland
16.20
Coffee break
16.30 Entresol.
POSTER SESSION II
Bottom hall.
Exhibition
19.30
Banquet
 
Friday, October 7th , 2005
9.00
Breakfast
10.00
Departure

 

 

Фотографии с конференции ICMNE-2005 и QI 2005

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On:
In: История, Конференции

ICMNE-2003

Фотографии с конференции ICMNE-2003
Version for print «CONFERENCE PROGRAM«
Version for print «POSTERS»

ICMNE 2003
CONFERENCE PROGRAM

Monday, October 6th, 2003

9.00 — Registration & Accommodation
13.00-14.00 Lunch

Conference hall

Special Session

16.00
S1-1

The Systems for Semiconductor Industry and Electron Beam Lithography LEO-SUPRA with electron-optic column «Gemini». A. Ul’yanenkov1, P. Czurratis2. 1. Carl Zeiss/LEO (Moscow office) 2. LEO Elektronenmikroskopie GmbH
16.30
S1-2
 Microanalysis of nanostructures. F. Bauer.
OXFORD Instruments GmbH/Oxford Instruments Analytical Ltd.
17.00
S1-3
 From scanning probe microscopes to smart nanotechnology facilities. V. Bykov, S. Saunin. NT-MDT & NTI Companies group, Moscow-Zelenograd, Russia
17.30
S1-4
 Elaboration of gallium arsenide technology in Georgia for development of microelectronic devices. N. Khuchua 1, Z. Chakhnakia 1, L. Khvedelidze 1, R. Melkadze 1, A. Tutunjan 1, R. Diehl 2. 1. Research and Production Complex (RPC) «Electron Technology» of I.Javakhishvili Tbilisi State University, Tbilisi, Georgia; 2. III-V Electronics and Optoelectronics Hardheim, Germany.

 

18.00 Welcome Party
19.00 Dinner

Thursday, October 7th, 2003

Conference hall

8.30 Welcome remarks

E.P. Velikhov, Conference Chair, RSC «Kurchatov Institute», Moscow
K.A. Valiev, Program Chair, IPT RAS, Moscow

Plenary Session I

8.40
L1-1
 INVITED: EUV lithography: Main challenges. V. Banine & J. Benschop, ASML, Veldhoven, the Netherlands
9.10
L1-2
 INVITED: Ultra thin Silicon-On-Insulator structures for post silicon microelectronics. V. P. Popov, Institute of Semiconductor Physics, RAS, Novosibirsk, Russia
9.40
L1-3
 INVITED: MBE Growth of Ultrasmall Coherent Ge Quantum Dots in Silicon for Applications in Nanoelectronics. O. P. Pchelyakov, A. I. Nikiforov, B. Z. Olshanetsky, S. A. Teys. Institute os Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia
10.10
L1-4
 INVITED: High-purity mono-isotopic 28Si, 29Si, 30Si. G. G. Devyatykh1, P. G. Sennikov1, A. V. Gusev1, A. D. Bulanov1, I. D. Kovalev1, A. K. Kaliteevskii2, O. N. Godisov2, H. Riemann3, N. V. Abrosimov3, H. — J. Pohl4. Institute of Chemistry of High-Purity Substances, RAS, Nizhny Novgorod, Russia; 2. STC «Centrotech-EchP», St.-Peterburg, Russia; 4. VITCON Projectconsult GmbH, Jena, Germany.

 

10.40-11.00 Coffee break.

Winter garden

Conference Hall

Session 1. Litho I

11.00
L1-5
 INVITED: Process Optimization using Lithography Simulation. A. Erdmann. Fraunhofer Institute of Integrated Systems and Device Technology (IISB), Erlangen, Germany.
11.30
O1-1
 New Method of 3D- Micro- and Nanostructures Production. B. Gurovich. Russian Research Center «Kurchatov Institute», Moscow, Russia
11.50
O1-2
 Single-Domain Patterned Magnetic Media Produced by Selective Removal of Atoms. B. Gurovich, K. Maslakov, E. Kuleshova, E. Meilikhov. Russian Research Center «Kurchatov Institute», Moscow, Russia
12.10
O1-3
 Scanning NanoImprinting by AFM like tool. O. Trofimov1, V. Dremov1,2, S. Dubonos1, A. Svintsov1, S. Zaitsev1. 1. Chernogolovka, Moscow distr., Russia; 2-Physikalisches Institut III Universitat Erlangen-Nurnberg Erwin-Rommel-Str. 1, Erlangen, Germany
12.30
O1-4
 NanoMaker — a new soft/hardware system for nanotechnology and industrial e-beam lithography. G. Grigor’eva1, B. N. Gaifullin1, A. A. Svintsov2, S. I. Zaitsev2. IMT RAS, 1. INTERFACE Ltd, Moscow; 2. Chernogolovka, Russia

 

13.00-14.00 Lunch

Conference Hall

Session 2. Litho II

14.00
O1-5
 The vortex mask design for irregular arrays of contact holes. P. G. Serafimovich, P. S. Ahn, J. K. Shin. Samsung Advanced Institute of Technology, Suwon, Korea
14.20
O1-6
 Laser source of ions for nanotechology. B. G. Freinkman1, A. V. Eletskii2, S. I. Zaitsev2. 1. IMT RAS, Chernogolovka, Moscow distr., Russia; 2. RSC «Kurchatov Institute», Moscow.
14.40
O1-7
 Laboratory methods for investigations of multilayer mirrors in Extreme Ultraviolet and Soft X-Ray region. M. S. Bibishkin, D. P. Chekhonadskih, N. I. Chkhalo, E. B. Klyuenkov, N. N. Salashchenko, I. G. Zabrodin, S. Yu. Zuev. Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia
15.00
O1-8
 EUV radiation from plasma of a pseudospark discharge in its different stages. Yu. D. Korolev, O. B. Frants, V. G. Geyman, R. V. Ivashov, N. V. Landl, I. A. Shemyakin. Institute of High Current Electronics, Tomsk, Russia
15.20
O1-9
 Ion lithography using FIB. Yu. B. Gorbatov, A. F. Vyatkin. Institute of Microelectronics Technology, RAS, Chernogolovka, Russia.

 

Room A. Session 3. Nanotransistors

14.00
O1-10
 FET on Ultrathin SOI (Fabrication and Research). O. V. Naumova, I. V. Antonova, V. P. Popov, Y. V. Nastaushev, T. A. Gavrilova, M. M. Kachanova L. V. Litvin, A. L. Aseev. Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
14.20
O1-11
 Static-induction transistor for VLSI logic elements. B. Konoplev, E. Ryndin. Taganrog State University of Radio-Engineering, Taganrog, Russia
14.40
O1-12
 A transistor based on space quantization effect. E. Ryndin. Taganrog State University of Radio-Engineering, Taganrog, Russia
15.00
O1-13
 Epitaxial growth of silicon on porous silicon. M. Balucani1, A. Belous2, V. Bondarenko3, G. Troyanova3, A. Ferrari1. 1. Unit of Research E6 INFM, Rome University «La Sapienza», Roma, Italy; 2. Research and Design Company «Belmicrosystems», Minsk, Belarus; 3. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.
15.20
O1-14
 Structure Peculiarities of Metallic Films Produced by Selective Removal of Atoms. B. Gurovich, A. Domantovsky, K. Maslakov, E. Olshansky, K. Prikhodko. Russian Research Center «Kurchatov Institute», Moscow, Russia.

 

Room B. Session 4. Modelling

14.00
O1-15
 The Structure and Electronic Properties of Zr and Hf Nitrides and Oxynitrides. D. Bazhanov1,2, A. Safonov1,3, A. Bagatur’yants1,3, A. Korkin4. 1. Kinetic Technologies, Ltd., Moscow, Russia; 2. Physics Department, Moscow State University, Moscow, Russia; 3. Photochemistry Center, RAS, Moscow, Russia; 4. DigitalDNA Semiconductor Products Sector, Motorola Inc., USA
14.20
O1-16
 A Self-consistent Modeling of the Leakage Current Through Thin Oxides. I. Polishchuk1,2, E. Burovski1,2. 1. RRC «Kurchatov institute», Moscow; 2. Kinetic Technologies, Ltd, Moscow.
14.40
O1-17
 The discretization of minority carrier generation kinetics at the semiconductor surface bordering staggered inhomogeneous insulator. Yu. V. Gulyaev, A. G. Zhdan, E. I. Goldman, G. V. Chucheva. The Institute of Radio Engineering and Electronics, RAS
15.00
O1-18
 Analysis of the metal single-electron arrays based on different materials. I. I. Abramov, S. A. Ignatenko. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.
15.20
O1-19
 Ensemble Monte Carlo simulation of submicron n-channel MOSFETs with account of hot electron effects. V. Borzdov, V. Galenchik, O. Zhevnyak, F. Komarov, A. Zyazulya. Belarussian State University, Minsk, Belarus

 

15.40-16.30 Coffee break

Conference Hall

Session 5. Micro- & nanostructures characterization

16.30
O1-20
 Structural diagnostics of ‘quantum’ layers by X-ray diffraction and standing waves. A. M. Afanas’ev1, M. A. Chuev1, R. M. Imamov2, E. Kh. Mukhamedzhanov2, E. M. Pashaev2, S. N. Yakunin2. 1.Institute of Physics & Technology, RAS; 2.A.V.Shubnikov Institute of Crystallography, RAS
16.50
O1-21
 Characterization of patterned nanomagnet arrays by scanning probe microscopy. N. I. Polushkin, B. A. Gribkov, and V. L. Mironov. Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia
17.10
O1-22
 Magnetic force microscopy of magnetization reversal of microstructures in situ in external field of up to 2000Oe. A. Bukharaev, D. Biziaev, P. Borodin, D. Ovchinnikov. Zavoisky Physical Technical Institute of RAS, Kazan, Russia.
17.30
O1-23
 Study of PZT thin films of different compositions by atomic force microscopy. A. Ankudinov, I. Pronin, N. Pertsev, I. Titkov, A. Titkov. A.F.Ioffe Physico-Technical Institute, RAS, St.Petersburg, Russia.
17.50
O1-24
 Local optical diagnostics of nanostructures. M. Bashevoy , A. Ezhov , S. Magnitskii, D. Muzychenko , V. Panov , J. Toursynov. Moscow State University, Russia
18.10
O1-25
 Interface study of SiGe/Si multilayers by X-ray reflectivity method. S. N. Yakunin, A. A. Zaitsev, E. M. Pashaev, M. M. Rzaev, R. M. Imamov. 1. Institute of Crystallography, RAS, Russia; 2. Moscow Institute of Radio Engineering and Automatics, Russia; 3. P.N. Lebedev Physical Institute, RAS, Russia

 

Room A. Session 6. Nanostructures

16.30
O1-26
 Local contact charging of semiconductor quantum dots by atomic force microscopy. A. N. Titkov1, M. S. Dunaevskii1, R. Laiho2. 1.Ioffe Physical-Technical Institute, RAS, St.-Peterburg, Russia; 2. Wihury Physical Laboratory, University of Turku, Finland.
16.50
O1-27
 Selective growth oriented carbon nanotube. S. A. Gavrilov1, N. N. Dzbanovsky2, V. V. Dvorkin2, E. A. Il’ichev1, B. K. Medvedev1, E. A. Poltoratsky1, G. S. Rychkov1, N. V. Suetin2. 1. State Research Institute of Physical Problems, Russia; 2. Nuclear Physics Institute, Moscow State University, Russia
17.10
O1-28
 Nanotubes for nanoelectronics: growth and characterization. S. V. Plusheva, I. V. Khodos, L. A. Fomin and G. M. Mikhailov. Institute of Microelectronics echnology RAS, Chernogolovka
17.30
O1-29
 Glass-encapsulated Single-crystal Nanowires and Filiform Nanostructures Fabrication. E. Badinter1, T. Huber2, A. Ioisher1, A. Nikolaeva3, I. Starush1. 1.Institute ELIRI s.a., Moldova; 2.Howard University, USA; 3. Institute of Applied Physics, Moldova.
17.50
O1-30
 Epitaxial SiC nanocrystals at the Si/SiO2 interface: electrical behaviour. L. Dozsa1, Zs. J. Horvath1, O. H. Krafcsik1, Gy. Vida2, P. Deak2, T. Mohacsy1. 1. Hungrian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, Hungry; 2.Dept. of Atomic Physics, Budapest University of Technology and Economics, Budapest, Hungary
18.10
O1-31
 Composite nanostructures based on porous silicon host. M. Balucani1, V. Bondarenko2, G. Troyanova2, A. Ferrari1. Unit of Research E6, INFM, Roma University «La Sapienza», Roma, Italy; 2. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus

 

Room B. Session 7. Magnetic nanostructures.

16.30
O1-32
 Approach to terabit density for magnetic data storage using direct optical patterning of Fe(Co)-based thin films. N. I. Polushkin, B. A. Gribkov, A. Ya. Lopatin. Institute of Physics of Microstructures, RAS, Nizhny Novgorod, Russia
16.50
O1-33
 Ferroelectric barium-strontium titanate films: electrical properties, microstructure, applications. O. M. Zhigalina1, O. V. Chuprin2, K. A. Vorotilov2, V. A. Vasil’ev2, A. S. Sigov2, Yu. V. Grigoriev1, N. M. Kotova3. 1.Institute of Crystallography, RAS, Russia; 2.Moscow State Technical University of Radioengineering, Electronics and Automation, Moscow, Russia; 3. Institute of Physical Chemistry, Moscow, Russia.
17.10
O1-34
 Magnetization reversal due to spin injection in magnetic junction. R. J. Elliott1, E. M. Epshtein2, Yu. V. Gulyaev2, P. E. Zilberman2. 1. University of Oxford Department of Physics, UK; 2. Institute of Radio Engineering and Electronics, RAS, Russia.
17.30
O1-35
 Some peculiarities of longitudinal magneto-resistance in single crystal wires of pure and doped bismuth. D. Gitsu1, T. Huber2, L. Konopko1, A. Nikolaeva1,3. 1. Institute of Applied Physics, AS, Moldova; 2.Department of Chemistry, Woward University, Washington, USA; 3. International Laboratory of High Magnetic Fields and Low Temperatures, Wroclav, Poland.
17.50
O1-36

Research of optical and structural properties in multilayer films (Ni22ACo75A) x20L. G. Bauhuis2, A. Keen2, H. von Kempen2, A. Matvienko1, A. Ostroukhova1, A. Pogorely1, T. Rasing2. 1. Institute of Magnetism of NAS of Ukraine, Kiev, Ukraine .2. Research Institute for Materials, University of Nijmegen, Nijmegen, The Nitherlands
18.10
O1-37
 Epitaxial Ni Films and Giant Magnetoresistance in Ballistic Ni Nanostructures. I. V. Malikov, V. Yu. Vinnichenko, L. A. Fomin and G. M. Mikhailov. Institute of Microelectronics Technology& High Purity Materials RAS, Chernogolovka, Moscow.

 

19.00 Dinner

Wednesday, October 8th 2003

07.50 Breakfast

Conference hall.

Session 8. Photonics

08.30
L2-6
 INVITED: Elements of electron-photonic integrated systems. V. V. Aristov, M. Yu. Barabanenkov, V. N. Mordkovich. Institute of Microelectronics Technology and High Purity Materials RAS.
09.00
L2-7
 INVITED: Macroporous silicon: material science and technology. A. F. Vyatkin. Institute of Microelectronics Technology and High Purity Materials RAS.
09.30
O2-38
 1D photonic crystals based on periodically grooved Si. V. Tolmachev1, E. Astrova1, T. Perova2. 1. Ioffe Physico-Technical Institute, St.-Peterburg, Russia; 2. Dept. Electr.& Electr. Eng., Trinity College, Dublin, Ireland.
09.50
O2-39
 White light emission from nanostructures embedded in ultra-shallow silicon p-n junctions. N. T. Bagraev, A. D. Bouravleuv, L. E. Klyachkin and A. M. Malyarenko. A.F. Ioffe Physico-Technical University, St.Petersburg, Russia.
10.10
O2-40
 A 512 Х 512 IR PtSi CMOS IMAGE SENSOR. S. Abramov, A. Belin, A. Gvaskov, V. Guminov, V. Zolotariov, V. Zoubkov, A. Popov, G. Rudakov, V. Rjabik, D. Churbanov. Matrix technologies inc.

 

10.30 Coffee break

Conference hall.

Session 9. Si/Ge heterostructures

11.00
O2-41
 Spin transport in Ge/Si quantum dot array. A. V. Nenashev, A. F. Zinovieva, A. V. Dvurechenskii. Institute of Semiconductor Physics, RAS, Novosibirsk, Russia.
11.20
O2-42
 Structural, photoluminescence and electrical properties of n-Si1-хGeх/n+(p)-Si heterojunction in relaxed Si1-хGeх/Si structure. L. K. Orlov1, A. V. Potapov1, M. L. Orlov1, V. I. Vdovin2, E. A. Steinman3, Zs. J. Horvath4, L. Dozsa4. 1.Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia; 2. Institute for Chemical problems of Microelectronics, Moscow, Russia; 3. Institute of Solid State Physics, RAS, Chernogolovka, Russia; 4. Research Institute for Technical Physics and Materials Science, HAS, Budapest, Hungary.
11.40
O2-43
 Electronic properties of the Si-Si1-хGeх field effect transistor heterostructures: electrical and electrophysical measurements. L. K. Orlov , A. V. Potapov, N. L. Ivina, R. A. Rubtsova, Zs. Horvath, L. Dozsa, A. S. Lonchakov, Yu. A. Arapov. 1.Institute for Physics of Microstructures, RAS; 2. State Lobachevsky University, Nizhny Novgorod, Russia; 3. Research Institute for Technical Physics and Materials Science, HAS, Budapest, Hungary; 4. Institute of Metal Physics RAS, Ekaterinburg.
12.00
O2-44
 Investigation of transport mechanisms in a-SiGe:H/c-Si heterostrucrures. A. Sherchenkov, B. Budaguan, A. Mazurov. Institute of Electronic Technology, Moscow, Russia.
12.20
O2-45
 Implanted quantum-dimensional SiGe structures. N. N. Gerasimenko1 and Yu. V. Parhomenko2. 1. Moscow Institute of Electronic Engineering; 2. Moscow Institute of Steel and Alloys.
12.40
O2-46
 Surface morphology transitions induced by ion beam action during Ge/Si MBE. A. V. Dvurechenskii, J. V. Smagina, V. A. Zinovyev, V. A. Armbrister. Institute of Semiconductors Physics of the Siberian Branch of the RAS, Novosibirsk

 

13.00 Lunch

Conference hall.

Session 10. HDP processing.

14.00
O2-47
 Microwave discharge on external surface of quartz plate. V. M. Shibkov, A. P. Ershov, O. S. Surkont. Moscow State University, Physical Depart., Moscow, Russia.
14.20
O2-48
 Comparative study of inductively coupled and microwave BF3 plasmas for microelectronic technology applications. Ya. N. Sukhanov, A. P Ershov, K. V. Rudenko and A. A. Orlikovsky. Institute of Physics and Technology RAS, Moscow, Russia.
14.40
O2-49
 Volume and heterogeneous chemistry in Cl2/Ar inductively coupled plasma. A. Efremov 1,2, V. Svettsov 1, C. — I. Kim 2. 1. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia; 2. Chung-Ang University, Seoul, Korea.
15.00
O2-50
 Formation of micro-and nanostructures in Si and SiO2 by using plasma etching and deposition processes. I. Amirov, M. Izyumov, O. Morozov, A. Shumilov. Institute of Microelectronics and Informatics, RAS, Yaroslavl, Russia.
15.20
O2-51
 Precise speeding shallow trench etch development for power electronics. V. Galperin, V. Zuev. OAO Angstrem, Zelenograd, Russia.

 

Room A. Session 11. Technological processes I.

14.00
O2-52
 Investigation of Zirconia Film Growth Using kinetic Monte Carlo (kMC), Molecular Dynamics (MD) and integrated kMC-MD Approaches. A. Knizhnik1, A. Bagatur’yants1, B. Potapkin1 and A. Korkin2. 1.Kinetic Technologies, Moscow, Russia; 2. Semiconductor Products Sector, Motorola Inc., USA
14.20
O2-53
CANCELLED!
14.40
O2-54
 AlGaAs-GaAs heterostructure ?-doped field-effect transistor (?-FET). Z. Chakhnakia 1, Z. Hatzopoulos 2, L. Khvedelidze 1, N. Khuchua 1, R. Melkadze 1, G. Peradze 1. 1. Research & Production Complex «(RPC) Electron Technology» of Tbilisi State University, Tbilisi, Georgia; 2. Foundation for Research and Technology — Hellas (FORTH) Institute of Electron Structure & Lasers, Heraklion, Greece.
15.00
O2-55
 Ion beam synthesis of cobalt silicides in Si and SiGe. G .G. Gumarov1, V. Yu. Petukhov1, V. A. Shustov1, O. P. Pchelyakov2, V. I. Mashanov2, I. B. Khaibullin1. 1. Kazan Physical-Technical Institute, RAS, Kazan, Russia; 2. Institute of Semiconductor Physics, RAS, Novosibirsk, Russia.
15.20
O2-56
 Planarization process of CMOS RAM multilevel interconnection system. V. A. Vasil’ev1, K. A. Vorotilov1, A. S. Valeev2, V. I. Shishko2, V. V. Mishin1, C. P. Volk2, A. S. Sigov1. 1. Moscow State Institute lf Radioengineering, Electronics and Automation, Moscow, Russia; 2. Scientific and Research Institute of Molecular Electronics and Mikron plant, Moscow, Russia.

 

Room B. Session 12. Technological processes II.

14.00
O2-57
 Investigation of the dynamics of recrystallization and melting of the surface of implanted silicon at rapid thermal processing. Ya. Fattakhov, M. Galyautdinov, T. L’vova, M. Zakharov, I. Khaibullin. Kazan Physico-Technical Institute, RAS, Kazan, Russia.
14.20
O2-58
 The Peculiarities of BF2 Ion Implantation During of Silicon MDS Integration Circuit Formation. A. N. Tarasenkov, N. N. Gerasimenko. Moscow Institute of Electronic Technology (Technical University), Zelenograd, Russia.
14.40
O2-59
 Phases transformation in Ti(Ta)-Ni(Co)-Si-N systems. I. Horin1, A. A. Orlikovsky1, A. G. Vasiliev1,2, A. L. Vasiliev3,4. 1. Institute of Physics&Technology (IPT), RAS, Moscow, Russia; 2.Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Moscow, Russia; 3. Institute of Crystallography, RAS, Moscow, Russia; 4. Department of Metallurgy and Materials Eng., Institute of Materials Science, University of Connecticut, Storrs, USA.
15.00
O2-60
 Ultra-low k dielectric for multilevel metallization system. V. V. Mishin, A. S. Sigov, V. A. Vasil’ev, K. A. Vorotilov. Moscow State Institute of Radioengineering, Electronics and Automation, Moscow, Russia.
15.20
O2-61
 Development of copper metallization for VLSI using diffusion barrier Ta-W-N layer. A. Klimovitskiy, E. Leonova, A. Mochalov. Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Moscow, Russia.

 

15.40 Coffee break

16.30 Entresol. Poster Session I

Bottom hall. Exhibition

19.00 Dinner

 

Thursday, October 9th 2003

08.00 Breakfast

09.00 Conference hall

Plenary session II

09.00
L3-8
 INVITED: Developments of Terahertz Wave Generation Technologies. Ken Suto1, Jun-ichi Nishizawa2,3. 1. Department of Materials Science, Tohoku University, Japan; 2. Photodynamics Research Center, Japan; 3. Semiconductor Research Institute, Japan.
09.30
L3-9
 INVITED: Electron-phonon interaction in 2D heterostructures. J. Pozela. Semiconductor Physics Institute, Vilnius, Lithuania.
10.00
L3-10
 INVITED: Investigation of physical and technological limits for sub-100 nm III-nitride transistors. S. Shapoval. Institute of Microelectronics Technology RAS, Chernogolovka, Russia.

 

10.30 Coffee break

11.00 Conference hall.

Session 13. UHF transistors and IC

11.00
O3-62
 Ultra high frequency AlGaN/GaN-transistor with inverted 2DEG Channel. V. G. Mokerov1, L. E. Velikovskii1, M. B. Vvedenskii1, Z. T. Kanametova1, V. E. Kaminskii1, P. V. Sazonov1, D. S. Silin1, J. Graul2, O. Semchinova2. 1. Institute of UHF Semiconductor Electronics of RAS, Moscow, Russia; 2. Laboratories for Informationstechnologie, University Hanover, Germany.
11.20
O3-63
 Low temperature technology of semiconductor devices and integrated circuits. A. Bibilashvili, Z. Bokhochadze, A. Gerasimov, R. Kazarov, Z. Kushitashvili, I. Lomidze, T. Ratiani, Z. Samadashvili. Microelectronics chair of Tbilisi State University, Tbilisi, Georgia.
11.40
O3-64
 Very-high-speed planar integrated circuit technology based on monolithic integration of RTD and SFET. A. Gorbatsevich1, I. Kazakov2, B. Nalbandov1, S. Shmelev1, A. Tsibizov2. 1. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia; 2. P.N. Lebedev Physical Institute, RAS, Moscow, Russia.
12.00
O3-65
 10 GHz 1:2 Switch MMIC for the communication and radar applications. V. G. Mokerov, D. L. Gnatyuk, B. G. Nalbandov, E. N. Ovcharenko, A. P. Lisitskii. Institute of UHF Semiconductor Electronics, RAS, Moscow, Russia.
12.20
O3-66
 Multichannel high-speed gallium arsenide integrated circuits for signal processing systems. V. Bespalov, L. Burzina, A. Gorbatsevich, M. Kirillov, B. Nalbandov, S. Schmelev. Scientific and Education Center LPI and MIET on Quantum Devices and Nanotechnologies, Moscow, Russia.
12.40
O3-67
 Photoluminescence characterization of resonant-tunneling diodes based on the GaAs/AlGaAs long-period superlattices in process of fabrication. A. A. Belov , A. L. Karuzskii , I. P. Kazakov , Yu. A. Mityagin , V. N. Murzin , A. V. Perestoronin, A. A. Pishchulin , S. S. Shmelev. P.N.Lebedev Physical Institute of RAS, Moscow, Russia.

 

13.00 Lunch

14.00 Conference hall.

Session 14. Nanostructures physics

14.20
O3-68
 Pulsed laser deposition of ZnO thin films. Zherikhin A. N., Khudobenko A. I., Panchenko V. Ya.
14.40
O3-69
 Non-universal scaling in the integral quantum Hall regime in two-dimensional electon gas in InGaAs/InP heterostructures. B. Podor1,2, Gy. Kovacs3, G. Remenyi4, I. G. Savel`ev5. 1. Research Institute for Technical Physics and Materials Science, HAS, Budapest, Hungary; 2. Budapest Polytechnic, Kando Kalman Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Budapest, Hungary; 3. Department of General Physics, Eotvos Lorand University, Budapest, Hungary; 4. CNRS Center de Recherches sur les Tres Basses Temperatures et Laboratoire des Champs Magnetiques Intenses, Grenoble, France; 5. A.F.Ioffe Physical Technical Institute, RAS, St.Peterburg, Russia.
15.00
O3-70
 Ballistic transport in quantum interference devices. A. A. Gorbatsevich1, V. V. Kapaev2. 1. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia; 2. P.N. Lebedev Physical Institute, RAS, Moscow, Russia.
15.20
O3-71
 New peculiarities of interband tunneling in broken-gap heterostructures. A. Zakharova1, S. T. Yen2, K. A. Chao3. 1. Institute of Physics and Technology RAS, Moscow, Russia; 2. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China; 3. Department of Physics, Lund University, Sweden.
15.40
O3-72
 Structural, photoluminescence and electrophysical properties of the porous multilayer InGaAs/GaAs heterostructures. L. K. Orlov1, N. L. Ivina1, N. A. Alyabina1, N. V. Vostokov2, R. A. Rubtsova1. 1. State Lobachevsky University; 2. Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia.

 

Room A. Session 15. MEMS and Sensors

14.20
O3-73
 Integrated sensor of current. V. Amelichev1, A. Galushkov1, S. Polomoshnov2, Iu. Chaplygin2 . 1. State Research Center Scientific and Manufacturing Coplex of the RF «Technological Center» at MIET, Moscow-Zelenograd, Russia; 2. Moscow State Institute of Electronic Technology Moscow-Zelenograd, Russia.
14.40
O3-74
 Linear electrostatic micromotors for nano- and micro-positioning. I. L. Baginsky and E. G. Kostsov. Institute of Automation and Electrometry, RAS, Novosibirsk, Russia.
15.00
O3-75
 Constructive-technological methods of self-forming — the base for fabrication of operating and sensitive elements for integrated microsystems. A. I. Galushkov, A. N. Saourov. SMC «Technological Center» MIEE, Moscow, Russia.
15.20
O3-76
 3D micromachined gyroscope. I. Lysenko, B. Konoplev. Taganrog State Universitu of Radio-Engineering, Taganrog, Russia.
15.40
O3-77
 Bolometric matrix multiplexer. V. Minaev1, E. Volodin, V. Zyubin, V. Chesnokov, I. Mikhalev, E. Muryleva, Yu. Fortinsky, Yu. Tschetverov. 1. JSC «Angstrem-M», Moscow, Russia; 2. JSC «Angstrem-M», Moscow, Russia; 3. JSC «ITTP IP», Moscow, Russia.

 

Room B. Session 16. Quantum Informatics.

14.20
O3-78
 Models of ensemble NMR quantum cellular automata based on artificial and natural electronic antiferromagnets. A. A. Kokin. Institute of Physics and Technology of RAS, Moscow, Russia.
14.40
O3-79
 Quantum key distribution on polarized single photons. V. L. Kurochkin, I. I. Ryabtsev, I. G. Neizvestny. Institute of Semiconductor Physics, RAS, Novosibirsk, Russia.
15.00
O3-80
 Anomalous Transport in Sisyphus Cooling Optical Lattice Scheme and Levy Distributions. M. P. Kondrashin, V. P. Yakovlev. Moscow State Engineering Physics Institute (state university), Russia.
15.20
O3-81
 Negative-U properties for a quantum dot. N. T. Bagraev1, A. D. Bouravleuv1, L. E. Klyachkin1, A. M. Malyarenko1, I. A. Shelykh2. 1. A.F.Ioffe Physico-Technical Institute, St.Peterburg, Russia; 2. St. Peterburg State Technical University, St.Peterburg, Russia.
15.40
O3-82
 Dynamics of entangled states of nuclear spins in solids. S. I. Doronin. Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia.
16.00
O3-83
 Noise-resistant quantum key distribution protocol. D. V. Sych, B. A. Grishanin, and V. N. Zadkov. International Laser Center and Department of Physics M. V. Lomonosov Moscow State University, Moscow, Russia.

 

16.20 Coffee break

16.30 Entresol. Poster session II

Bottom hall. Exhibition

19.30 Banquet

Friday, October 10th, 2003

09.00 Breakfast

10.00 Departure

 

POSTERS

October 8th. 2003

Poster session I
Entresol

P 1-1
 Structure Peculiarities of Metallic Films Produced by Selective Removal of Atoms. B. Gurovich, A. Domantovsky, K. Maslakov, E. Olshansky, K. Prikhodko. Russian Research Center «Kurchatov Institute», Moscow, Russia.
P1-2
 Electrical Properties of Metal Films Prepared by Selective Removal of Atoms. B. Gurovich1, K. Prikhodko1, A. Domantovsky1, D. Dolgy1, E. Ol’shansky1, B. Aronzon1, Y. Lunin2. 1. Russian Research Center «Kurchatov Institute», Moscow, Russia; 2. Institute for System Studies, RAS, Moscow, Russia.
P 1-3
 Increasing of electric strength in the pseudospark gap with a high pulse repetition rate. Yu. D. Korolev, O. B. Frants, V. G. Geyman, R. V. Ivashov, N. V. Landl, I. A. Shemyakin. Institute of High Current Electronics, Tomsk, Russia.
P1-4
 Heat — resistant light-sensitive polymer compositions based on poly(o — hydroxyamides) — heat-resistant photolacks. L. Rudaya1, N. Klimova1, T. Yourre1, G Lebedeva2, I. Sokolova3. 1. St. Petersburg State Technological Institute (Technical University), St. Petersburg, Russia; 2. Institute of Macromolecular Compounds, RAS, St. Petersburg, Russia; 3. St. Petersburg State Electr technical University (LETI), St. Petersburg, Russia.
P 1-5

Pre-exposure thermal treatment of photoresist layers under elevated pressure as applied to lithographic technologies of photomask and integrated microcircuit manufacture. V. A. Peremyshchev1, V. V. Martynov2. 1.Technology. Equipment. Materials company, Moscow, Russia; 2. Submicro Research and Development Association, Zelenograd, Russia.
P1-6
 Discharge pumped table-top EUV laser on dense plasma of multi charged ions. V. Burtsev, E. Bol’shakov, V. Chernobrovin, N. Kalinin. Efremov Scientific Research Institute of Electrophysical Apparatus, St. Petersburg, Russia.
P1-7
 Automatical Optimization of Pupil Filters for High-Resolution Photolithography. M. Machin, M. Gitlin, N. Savinskii. Institute for Microelectronics and Informatics of RAS.
P1-8
 Self-align technology for nanotransistors channel forming. K. Valiev, A. Krivospitsky, A. Okshin, A. Orlikovsky, Yu. Semin. Institute of of Physics and Technology, RAS, Moscow, Russia
P1-9
 The effect of imaging forces in ultra thin gate insulator on the tunneling current and its oscillations at the region of transition from the direct tunneling to the Fowler-Nordheim tunneling. E. I. Goldman, N. F. Kukharskaya, G. V. Chucheva and A. G. Zhdan. The Institute of Radio Engineering and Electronics, RAS.
P 1-10
 Initiated tunnel current through thin gate oxide generation minority carriers in Si-MOS-structures. G. V. Chucheva1, A. S. Dudnikov2, E. I. Goldman1, N. A. Zaitsev2, A. G. Zhdan1. 1. The Institute of Radio Engineering and Electronics, RAS; 2. JSC «Mikron Corporation».
P1-11
 Investigation of the leakage currents in SOI MOSFET with the nanoscale channel length. A. A. Frantsusov, N. I. Bojarkina, M. A. Ilnitsky, V. P. Popov, L. N. Safronov. Institute of Semiconductor Physics, RAS, Novosibirsk, Russia.
P 1-12
 Gamma radiation tolerance of 0.5 µm SOI MOSFETs. O. V. Naumova, A. A. Frantsuzov, V. P. Popov. Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia.
P1-13
 The application of Thomas-Fermi equation for the modelling of an intra-atomic potential in the ultrathin gate dielectric. G. Krasnikov, A. Eremenko, N. Zaitsev, I. Matyushkin. Research and Development Institute for Molecular Electronics and Plant MICRON, Moscow, Zelenograd, Russia.
P 1-14
 Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin film. A. V. Khomich1, V. I. Kovalev1, A. S. Vedeneev1, A. G. Kazanskyi2, P. A. Forsh D. He2, X. Q. Wang3, H. Mell4. 1. Institute of Radiotechnics and Electronics, RAS, Fryazino, Russia; 2. M.V. Lomonosov Moscow State University, Department of Physics, Moscow, Russia; 3. Lanzhou University, Department of Physics School of Physical and Technology, Lanzhou, China; 4. Philipps-Universitat Marburg, Fachdereich Physik, Marburg, Germany.
P1-15
 Polycrystalline silicon for semiconductor devices. D. Milovzorov. Institute of Physics and Technology, RAS, Moscow, Russia.
P 1-16
 Ion synthesis of silicate glasses: simulation, process engineering and applied aspects. S. Krivelevich, E. Buchin, Yu. Denisenko, A. Tsyrulev. Institute of Microelectronics and Informatics, RAS, Yaroslavl, Russia.
P1-17
 Investigation of energy levels in Si subjected high-temperature diffusion annealing in Zn atmosphere. Kornilov B.V., Privezentsev V. V. Institute of Physics and Technology, RAS, Moscow, Russia.
P1-18
 Influence of cells-MOSFETs with Schottky barrier drain contact location in power IC on electrical device characteristics. M. Korolev1, A. Krasukov1, R. Tihonov2. 1. Moscow State Institute of Electronics Engineering; 2. Scientific Manufacturing Center «Technological Center», Moscow, MSIEE
P1-19
 Functional Diagnostics of the Metal Diffusion in Silicon. A. E. Berdnikov, V. N. Gusev, A. A. Popov, V. I. Rudakov, V. D. Chernomordik. Institute of Microelectronics and Informatics RAS, Yaroslavl, Russia.
P1-20
 Development of the scanning spreading resistance microscopy for nanoscale structure properties investigation. V. Shevyakov1, S. Lemeshko2, A. Tihomirov1. 1. Moscow Institute of Electronic Engineering, Zelenograd, Moscow, Russia; 2. Molecular Devices and tools for nanotechology Co., Zelenograd, Moscow.
P1-21
 Application of piezoelectric monocrystals in devices of exact positioning of probe microscopes. V. Antipov, M. Malinkovich, Yu. Parkhomenko. Moscow Steel and Alloys Institute, Russia.
P1-22
 Low-Frequency Noise in Disordered Silicon Systems. M. I. Makoviychuk1, E. O. Parshin1, A. L. Chapkevich2. 1. Institute of Microelectronics & Informatics, RAS, Yaroslavl, Russia; 2. Moscow Committee of Science and Technologies, Moscow, Russia.
P1-23
 Characterization of nanocrystals in porous germanium layer by X-RAY diffraction. A. Lomov1, V. Bushuev2, V. Karavanskii 3. 1. A.V. Shubnikov Institute of Crystallography, RAS, Moscow, Russia; 2. M.V. Lomonosov Moscow State University, Moscow, Russia; 3. Institute of Natural Sciences Center of General Physics Institute, RAS, Moscow.
P1-24
 Advanced capabilities of binary modulation polarization ellipsometry. V. I. Kovalev, A. I. Rukovishnikov, A. V. Khomich. Institute of Radiotechnics and Electronics, RAS, Fryazino, Russia.
P1-25
 Nonlinear-optical microscopy for polarization switching in thin ferroelectric films. E. Mishina1, N. Sherstyuk1, K. Vorotilov1, A. Sigov1, Th. Rasing2, V. M. Mukhortov3. 1. Moscow State Institute of Radioengineering, Electronics and Automation, Russia; 2. University of Nijmegen, The Netherlands; 3. Institute of General Physics, RAS, Moscow, Russia.
P1-26
 PMMA and polystyrene films modification under ion implantation studied by spectroscopic ellipsometry. A. V. Leontyev1, V. I. Kovalev2, A. V. Khomich2, F. F. Komarov1. 1. Belorussian State University, Minsk, Belarus; 2. Institute of Radiotechnics and Electronics, RAS, Fryazino, Russia.
P1-27
 Ellipsometric investigation of buried layers in ion-implanted and annealed silicon and diamond structures. V. I. Kovalev1, A. V. Khomich1, A. I. Rukovishnikov1, R. A. Kmelnitskyi2, E. V. Zavedeev3. 1. Institute of Radiotechnics and Electronics, RAS, Fryazino, Russia; 2. Lebedev Physical Institute, RAS, Moscow, Russia; 3. General Physics Institute, RAS, Moscow, Russia.
P1-28
 Computer Simulation Application for Improving Correctness of Data Obtained by Magnetic Force Microscope. D. Ovchinnikov, A. Bukharaev. Zavoisky Physical Technical Institute of RAS, Kazan, Russia.
P1-29
 Investigation of dissolution process of implanted silicon dioxide. N. Nurgazizov, A. Bukharaev. Zavoisky Physical Technical Institute of RAS, Kazan, Russia.
P1-30
 Wave-ordered structure on silicon surface and its modification by wet and dry etching. D. S. Kibalov, I. V. Zhuravlev, P. A. Lepshin, G. F. Smirnova, I. I. Amirov, V. K. Smirnov. Institute of Microelectronics and Informatics, RAS, Yaroslavl, Russia.
P1-31
 Simulation of a ballistic field effect nanotransistors. A. A. Sidorov, V. V. V’yurkov, and A. A. Orlikovsky. Institute of Physics and Technology RAS, Moscow
P1-32
 Bi films for the fabrication of nanowires by the probe lithography. A. Chernykh, A. Il’in, O. Kononenko, G. Mikhailov. Institute of Microelectronics Technology & High Purity Materials, RAS, Chernogolovka, Moscow.
P1-33
 Current transport and photoelectric properties of silicon nanocomposite — porous SiC. V. I. Sokolov1, M. V. Zamoryanskya1, L. V. Grigoryev2, V. A. Berbetc2, V. E. Ter-Nersysiants2. 1. Ioffe Physicotechnical Institute, St. Peterburg, Russia; 2. St.Petersburg University, Physical Research Instituteб Russia.
P1-34
 The research system for experiments on studying the gas medium influence on the electroforming process. V. Levin, V. Mordvintsev. Institute of Microelectronics and Informatics, Russian Academy of Sciences, Yaroslavl, Russia.
P1-35
 Current transport in thermooxidized silicon nanocomposite. V. I. Sokolov, M. V. Zamoryanskya, L. V. Grigoryev, V. A. Berbetc, V. E. Ter-Nersysiants 1. Ioffe Physicotechnical Institute, St.Petersbyrg, Russia; 2. St.Petersburg University, Physical Research Institute.
P1-36
 An Investigation into Nano-Sized Fractal Film Structures. I. Serov 1, G. Lukyanov2, V. Margolin 1 , N. Potsar 3 , I. Soltovskaya 1 , V. Fantikov 3. 1. Aires New Medial Technologies Foundation, St. Petersburg, Russia; 2. St. Petersburg State Institute of Fine Mechanics and Optics (Technical University); 3. St. Petersburg State Electrotechnical University (LETI), St. Petersburg, Russia.
P1-37
 The features of electroforming in open sandwich structures Si-SiO2-W for silicon of different types of conductivity. V. Mordvintsev, S. Kudryavtsev, V. Levin. Institute of Microelectronics and Informatics, Russian Academy of Sciences, Yaroslavl, Russia.
P1-38
 Influence of electrostatic interaction between a conducting cantilever and a metal film on the local anodic oxidation. A. N. Bulatov, V. K. Nevolin. Moscow State Institute of Electrical Engineering, Zelenograd, Moscow, Russia.
P1-39
 Electron Beam Induced Deposition of Iron Carbon Nanostructures from Iron Dodecacarbonyl Vapour. M. A. Bruk1, E. N. Zhikharev2, E. I. Grigoriev1, A. V. Spirin1, V. A. Kalnov2, I. E. Kardash1. 1. Kaprov Institute of Physical Chemistry, Moscow, Russia; 2. Physics & Technology Institute of Russian Academy of Science, Moscow, Russia.
P1-40
 PZT nanostructures templated into porous alumina membranes. V. A. Vasil’ev 1 , E. D. Mishina 1 , K. A. Vorotilov 1 , A. S. Sigov 1 , O. Zhigalina 2 , N. M. Kotova 3. 1. Moscow State Institute of Radioengineering, Electronics and Automation, Moscow, Russia; 2. Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia; 3 Institute of Physical Chemistry, Moscow, Russia.
P1-41
 Diffusive and ballistic regime for transfer resistances. V. Yu. Vinnichenko, A. V. Chernykh and G. M. Mikhailov. Institute of the Microelectronic Technology and High Pure materials RAS , 142432 , Chernogolovka , Moscow Region , Russia.
P1-42
 The investigations of ferroelectric thin films in virtual measuring system. E. Pevtsov, A. Sigov, A. Pyzhova, A. Gorelov. Moscow State Institute of Radioengineering, Electronics & Automation (Technical University), Russia
P1-43
 MFM study and computer simulation of domain structures in permalloy elements. A. G. Temiryazev. Institute of Radioengineering & Electronics RAS, Fryazino, Russia.
P1-44
 Fast ferroelectric domain switching probed by second harmonic generation. E. D. Mishina 1 , N. E. Sherstyuk 1 , A. S. Sigov 1 , A. V. Mishina 2 , V. M. Mukhortov3 , Th. Rasing 4. 1. Moscow State Institute of Radioengineering, Electronics and Automation, Moscow, Russia; 2. Tver State Technical University, Tver, Russia; 3. Institute of General Physics, Russian Academy of Science, Moscow, Russia, 4. University of Nijmegen, The Netherlands.
P1-45
 Ferroelectric nanostructures sputtered on alumina membranes. E. D. Mishina 1, V. I. Stadnichuk 1, A. S. Sigov 1, Yu. I. Golovko 2, V. M. Mukhorotov 2, Th. Rasing 3. 1. Moscow State Institute of Radioengineering, Electronics and Automation, Moscow; 2. Institute of General Physics, Russian Academy of Science, Moscow, Russia. 3. University of Nijmegen, The Netherlands.
P1-46
 FMR investigation of permalloy array structures. Yu. A. Filimonov1, S. A. Nikitov2, A. V. Butko3, A. V. Kozhevnikov1, A. A. Veselov1, S. L. Vysotsky. 1. Institute of Radioengineering & Electronics, RAS, Saratov Department, Saratov, Russia; 2. Institute of Radioengineering& Electronics, RAS, Moscow, Russia.
P1-47
 Magnetic properties of DC magnetron sputtered thin nickel films. A. S. Dzhumaliev, Yu. A. Filimonov, S. N. Vasiltchenko, A. V. Kozhevnikov, S. L. Vysotsky. Institute of Radioengineering & Electronics, RAS, Saratov Department, Saratov, Russia
P1-48
 Influence of growth temperature on the easy magnetization axis switch and domain structure in Fe/GaAs(100) structures. Yu. Filimonov, A. Dzhumaliev, A. Kozhevnikov, S. Vysotsky. Institute of Radioengineering & Electronics, RAS, Saratov Department, Saratov, Russia.
P1-49
 Tomographic reconstruction of space plasma inhomogeneities in wide aperture plasma technology equipment under strong restriction on the points of view. K. V. Rudenko, A. V. Fadeev, A. A. Orlikovsky, and K. A. Valiev. Institute of Physics and Technology RAS, Moscow, Russia.
P1-50
 Etching mechanism of Au thin films in Cl2/Ar inductively coupled plasma. A. Efremov 1,2, V. Svettsov 1, C. — I. Kim 2. 1. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia; 2. Chung-Ang University, Seoul, Korea.
P1-51
 Investigation of influence of low energy ion beam parameters on process of Reactive Ion Beam Synthesis (RIBS) of thin films. Y. P. Maishev, S. L. Shevchuk. Institute of Physics and Technology RAS, Moscow, Russia.
P1-52
 Application RIE system in precise piezoelectric quartz resonators and filters manufacture. V. Galperin, V. Zuev. OAO Angstrem, Zelenograd, Russia.
P1-53
 Simulation of technological process by etching of microstructures in high-voltage gas discharge plasma. N. Kazanskiy, V. Kolpakov. Image Processing Systems Institute, RAS, Samara, Russia
P1-54
 The equation of a two-dimensional island growth on the incommensurable monocrystalline substrate. Yu. N. Devyatko, S. V. Rogozhkin, A. V. Fadeev. Moscow engineering-physical institute (state university), Moscow, Russia.
P1-55
 The mathematical modeling of the polymerization processes during the high-temperature oxidation of silicon. G. Krasnikov, A. Eremenko, N. Zaitsev, I. Matyushkin. Research and Development Institute for Molecular Electronics and Plant MICRON Moscow, Zelenograd, Russia.
P1-56
 Defects in YSZ films induced by electric breakdowns during magnetron deposition on Si substrate. V. G. Beshenkov, V. A. Marchenko, A. G. Znamenskii. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia.
P1-57
 Application of modified moments method for kinetics description of nano-, micro -particles formation in gas phase. A. Durov, M. Deminsky, M. Strelkova, B. Potapkin. RRC «Kurchatov Institute», 123182, Kurchatov sq. 1, Moscow, Russia.
P1-58
 First principle calculations of interactions of ZrCl4 precursors with bare and hydroxylated ZrO2 surface. I. M. Iskandarova 1, A. A. Knizhnik 1, E. A. Rykova 1, A. A. Bagatur’yants 1, B. V. Potapkin 1, A. A. Korkin 2. 1. Kinetic Technologies Ltd., Moscow, Russia; 2. Semiconductor Products Sector, Motorola Inc., Mesa, USA.
P1-59
 Vanadium reactive magnetron sputtering in mixed Ar/O2 discharges. V. A. Marchenko. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia.
P1-60
 Some properties of titanium nitride films deposited by reactive magnetron sputtering. V. Bochkaryov, S. Kudryavtsev, V. Mordvintsev, N. Timina, L. Tsvetkova. Institute of Microelectronics and Informatics, Russian Academy of Sciences, Yaroslavl, Russia.
P1-61
 Structural Transition in Amorphous Silicon Deposited by Low Frequency Discharge. A. A. Popov1, A. E. Berdnikov1, V. D. Chernomordik1, Yu. A. Munakov1, M. D. Efremov2, V. A. Volodin2. 1. Institute of Microelectronics and Informatics RAS, Yaroslal, Russia; 2. Institute of Semiconductors Physics, Siberian Branch of RAS, Novosibirsk, Russia.
P1-62
 Nb epitaxy at the time of low-energy ion bombardment conditions. V. V. Naumov, V. F. Bochkarev, A. A. Goryachev, A. S. Kunitsyn, E. I. Ilyashenko, P. E. Goa, T. H. Iohansen. 1. Institute of Microelectronics and Computer Science, RAS, Yaroslavl, Russia; 2. University of. Oslo, Norway.
P1-63
 Contact systems for sub-100 nm CMOS technology. I. A. Horin 1, A. A. Orlikovsky1, A. G. Vasiliev 1,2, A. L. Vasiliev 3,4. 1. Institute of Physics & Technology (IPT), Russian Academy of Sciences, Moscow, Russia; 2. Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Moscow, Russia; 3. Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia; 4. Department of Metallurgy and Materials Eng., Institute of Materials Science, Unit 3136, University of Connecticut, Storrs, USA.
P1-64
 The polyimides photoresist for multilevel- interconnect VLSI technology. N. Savinski. Laboratory of Molecular Electronics, Institute of Microelectronics and Informatics of RAS, Yaroslavl, Russia.
P1-65
 Epitaxial erbium silicide contact to silicon-germanium. Zs. J. Horvath 1, G. Molnar1, G. Peto 1, I. Dezsi 2, R. Loo 3, M. Caymax 3, K. Z’d’ansky 4. 1. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest 114, Hungary; 2. KFKI Research Institute for Particle and Nuclear Physics of the Hungarian Academy of Sciences, Budapest 114, Hungary; 3. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium; 4. Institute of Radio Engineering and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, Prague 8, 18251, Czech Republic.
P1-66
 Electrical behaviour of Al/Si and Al/SiGe junctions: Effect of surface treatment. Zs. J. Horvath 1, L. K. Orlov 2, M. Adam 1, A. V. Potapov 2, I. Szabo 1, V. A. Tolomasov 2, B. Cvikl 3, Yu. M. Ivanov 4, D. Korosak 3, E. Pashaev 4. 1. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, Hungary; 2. Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia; 3. Faculty of Civil Engineering, University of Maribor, Maribor, Slovenia, and J. Stefan Institute,Ljubljana, Slovenia; 4. Institute of Crystallograhpy, RAS, Moscow, Russia.
P1-67
 Modeling diffusion of ion implanted impurity in crystalline silicon under a temperature gradient. V. Rudakov, V. Ovcharov, A. Bashmakov. Institute of Microelectronics and Informatics, Russian Academy of Sciences, Yaroslavl, Russia.
P1-68
 Modeling of Phosphorous Diffusion in Ion-Implanted Si in Condition of Dopant Transient Enhanced Out-Diffusion at Vacuum Rapid Thermal Annealing. V. Kagadei 1, A. Markov 2, D. Proskurovsky 2. 1. Research Institute of Semiconductor Devices, Tomsk, Russia; 2. Institute of High Current Electronics, Tomsk, Russia.
P1-69
 Precision studies of semiconductor superlattices by X-Ray diagnostic methods. E. Pashaev 1, S. Yakunin 1, A. Zaitsev 2. 1. Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia; 2. Moscow Institute of Radio Engineering and Automatics, Moscow, Russia.
P1-70
 Determining the surface electrostatic potential ?s of a dielectric bordering semiconductor using the method of ? ‘s (?s)-diagrams. G. V. Chucheva, N. F. Kukharskaya, A. G. Zhdan. The Institute of Radio Engineering and Electronics, RAS, Moscow, Russia.

 

October 9th. 2003

Poster session II
Entresol

P2-71
 Fabrication of 3D photonics structures. S. Zaitsev, M. Knyazev, S. Dubonos. Institute of Microelectronics Technology, RAS, Chernogolovka, Russia.
P2-72
 Quality of silicon macropores produced by deep anodic etching (DAE) depending on silicon wafer resistivity and parameters of the DAE procedure. V. V. Starkov, E. Yu. Gavrilin, A. F. Vyatkin, S. V. Dubonos, and M. A. Knyasev. Institute of Microelectronics Technology, RAS, Moscow district, Chernogolovka, Russia.
P2-73
 Investigation of a nucleation stage of macropore formation in p-type silicon. V. V. Starkov, E. Yu. Gavrilin, A. F. Vyatkin. Institute of Microelectronics Technology, Russian Academy of Sciences, Moscow district, Chernogolovka, Russia.
P2-74
 Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxial stressed silicon plate. V. V. Starkov1, E. Yu. Gavrilin1, A. F. Vyatkin1, V. I. Emel’yanov2, and K. I. Eremin2. 1. Institute of Microelectronics Technology, RAS, Moscow — Chernogolovka, Russia, 2. International Laser Center, Lomonosov Moscow State University, Moscow, Russia
P2-75
 Porous anodic alumina for photonics and optoelectronics. S. Gavrilov 1, D. Kravtchenko 1, A. Zheleznyakova 1, V. Timoshenko 2, P. Kashkarov 2, V. Melnikov2, G. Zaitsev 2, L. Golovan 2. 1. Moscow Institute of Electronic Technology, Moscow, Russia; 2. Physics Department, M.V. Lomonosov Moscow State University, Moscow, Russia.
P2-76
 Study on interaction of organic luminophors with the modified porous alumina. G. Gorokh 1, A. Kukhta 2, Yu. Koshin 1, D. Solovei 1, A. Poznyak 1, A. Mozalev. 1. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus; 2. Institute of Molecular and Atomic Physics, Minsk, Belarus.
P2-77
 Design and manufacturing of passive — matrix for organic light-emitting micro display. M. Gitlin, N. Savinski, K. Truhanov, M. Kachalov, E. Savinskaya. Laboratory of Molecular Electronics, Institute of Microelectronics and Informatics of RAS, Yaroslavl, Russia.
P2-78
 The strain distribution in Si lattice of the layer containing в -FeSi2 precipitates. A. Borun, N. Khmelnitskaja, Yu. Parkhomenko, E. Vygovskaja. The Moscow institute of steel and alloys, Moscow, Russia.
P2-79
 Residual Photoresist Removal from Si and GaAs Surface by Atomic Hydrogen Flow Treatment. E. Anischenko 1, V. Diamant 2, V. Kagadei 1, E. Nefeyodtsev 3, K. Oskomov 3, D. Proskurovsky 3, S. Romanenko 3. 1. Research Institute of Semiconductor Devices, Tomsk, Russia; 2. Atomic Hydrogen Technologies, Katzrin, Israel; 3. Institute of High Current Electronics, Tomsk, Russia.
P2-80
 Structural characterization of undoped and Si-doped AlGaAs/GaAs double quantum wells separated by a thin AlAs layer. A. Lomov 1, M. Chuev 2, G. Galiev 3, E. Klimov 3, A. Cherechukin 3. 1. A.V. Shubnikov Institute of Crystallography, RAS, Moscow, Russia; 2. Institute of Physics & Technology of RAS, Moscow, Russia; 3. Institute of UHF Semiconductor Electronics of RAS, Moscow, Russia.
P2-81
CANCELLED!
P2-82
 Formation of multilayer Co/Cu and Ni/Cu structures by magnetron sputtering and electron-beam evaporation. I. A. Horin1, V.F. Meshcheryakov2, A. A. Orlikovsky1, K. V. Timonin3, A. G. Vasiliev1,2. 1. Institute of Physics & Technology (IPT), RAS, Moscow, Russia; 2. Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Moscow, Russia; 3. Institute of Crystallography, RAS, Moscow, Russia.
P2-83
 Tilted-axes YBCO thin films: from vicinal range to step bunching. P. B. Mozhaev 1,2, J. E. Mozhaeva 1,2, C. S. Jacobsen2, J. B. Hansen2, I. K. Bdikin3, T. Donchev4, E. Mateev4, T. Nurgaliev4, S. A. Zhgoon5, A. E. Barinov5. 1. Institute of Physics and Technology, RAS, Moscow, Russia, 2. Technical University of Denmark, Physics Dept., Lyngby, Denmark,3. Dept. of Ceramic and Glass Engineering, CICECO, University of Aveiro, Aveiro, Portugal 4. Institute of Electronics Bulgarian Academy of Sciences, Sofia, Bulgaria 5. Moscow Power Engineering Institute, Moscow, Russia
P2-84
 Photoluminescence spectroscopy of quantum well GaAs/InGaAs/GaAs in electrical field. Yu. V. Khabarov, L. E. Velikovsky. Institute of UHF Semiconductor Electronics, Russian Academy of Sciences, Moscow, Russia.
P2-85
 Submicron probes for Hall magnetometry over the extended temperature range from helium to room temperatures. S. V. Morozov 1, S. V. Dubonos 1, K. S. Novoselov1,2, A. K. Geim 2. 1. Institute of Microelectronics Technology and High Purity Material, RAS, Chernogolovka, Russia; 2. University of Manchester, Manchester, UK.
P2-86
 Argon-oxygen ion-plasma treatment modifies photoluminescence spectrum of porous silicon. B. M. Kostishko, S. J. Salomatin. Ul’yanovsk State University, Ul’yanovsk, Russia.
P2-87
 Method of electrophysical parameters determination in semiconductors by means of microstripe resonator. V. V. Sidorin, A. V. Sidorin. Moscow State Institute of Radioenginiriing, Electronics and Automation (Technical University) MIREA, Moscow, Russia.
P2-88
 Modeling Atomic Hydrogen Diffusion in GaAs. V. Kagadei 1, E. Nefyodtsev 2. 1. Research Institute of Semiconductor Devices, Tomsk, Russia; 2. Institute of High Current Electronics, Tomsk, Russia.
P2-89
 Dry Cleaning of Fluorocarbon Residues by Atomic Hydrogen Flow. E. Anischenko 1, V. Diamant 2, V. Kagadei 1, E. Nefyodtsev 3, D. Proskurovsky 3, S. Romanenko 3. 1. Research Institute of Semiconductor Devices, Tomsk, Russia; 2. Atomic Hydrogen Technologies, Katzrin, Israel; 3. Institute of High Current Electronics, Tomsk, Russia.
P2-90
 Application of Atomic Hydrogen Treatment in Si and GaAs Based Devices Technology. V. Kagadei 1, E. Nefyodtsev 2, D. Proskurovsky 2, S. Romanenko 2. 1. Research Institute of Semiconductor Devices, Tomsk, Russia; 2. Institute of High Current Electronics, Tomsk, Russia.
P2-91
 F+, B+ ion implantation into GaAs multilayer heterostructures. M. Tigishvili, N. Gapishvili, R. Melkadze, M. Ksaverieva, T. Khelashvili. Research & Production Complex (RPC) » Electron Technology» of Tbilisi State University, Tbilisi Georgia.
P2-92
 DD-PHEMT structures and technology on GaAs for power amplification in up to millimeter wave range. V. G. Mokerov 1, A. S. Bugayev 1, Yu. V. Fedorov 1, M. Yu. Scherbakova 1, A. P. Senichkin 1, A. T. Grigoriev 1, E. N. Enyushkina 1, L. E. Velikovskii 1, G. Z. Garber 2, A. M. Zubkov 2, Yu. A. Matveyev 2. 1. Institute of Ultra High Frequency Semiconductor Electronics of RAS (IUHFSE RAS), Moscow, Russia; 2. Science Research Institute «Pulsar», Moscow, Russia
P2-93
 InAlAs/InGaAs isomorphic HEMT’s with cut off frequency ft>100GHz for mm-wave applications. V. G. Mokerov, Yu. V. Fedorov, A. S. Bugaev, M. Yu. Scherbakova, A. T. Grigoriev, E. N. Enyushkina. 1. Institute of Ultra High Frequency Semiconductor Electronics of RAS (IUHFSE RAS) Moscow,Russia.
P2-94

Structure Peculiarities of Metallic Films Produced by Selective Removal of Atoms. B. Gurovich, A. Domantovsky, K. Maslakov, E. Olshansky, K. Prikhodko. Russian Research Center «Kurchatov Institute», Moscow, Russia.
P2-95
 Logic gates based on resonant-tunneling diodes. A. Gorbatsevich 1, I. Kazakov 2, M. Kirillov 1, B. Nalbandov 1, S. Schmelev 1, A. Tsibizov 2. 1. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia; 2. P.N. Lebedev Physical Institute, RAS, Moscow, Russia.
P2-96
CANCELLED!
P2-97
 Liquid phase epitaxial growth and optical properties of InxGa1-xAsySb1-y on GaSb B. Podor, V. Rakovics, J. Balazs, A. L. Toth. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, Hungary.
P2-98
 Design of P-HEMT-MMIC chipset for X-band active phased array radar. V. G. Mokerov, B. G. Nalbandov, E. N. Ovcharenko, T. I. Kuznetzova, D. L. Gnatyuk, A. S. Bugaev, Yu. V. Fedorov. Institute of UHF Semiconductor Electronics of RAS, Moscow, Russia.
P2-99
 Au electrical contacts to GaSb based epitaxial structures. Zs. J. Horvath, V. Rakovics, B. Podor. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest 114, Hungary.
P2-100
 The process of low-temperature diffusion in production of the semiconductor devices. A. Bibilashvili, Z. Bokhochadze, A. Gerasimov, N. Gochaleishvili, R. Kazarov, I. Lomidze, E. Maziashvili, S. Sikharulidze. Microelectronics chair of Tbilisi State University, Tbilisi, Georgia.
P2-101
 Elaboration of gallium arsenide technology in Georgia for development of microelectronic devices. N. Khuchua 1, Z. Chakhnakia 1, L. Khvedelidze 1, R. Melkadze 1, A. Tutunjan 1, R. Diehl 2. 1. Research and Production Complex (RPC) «Electron Technology» of I.Javakhishvili Tbilisi State University, Tbilisi, Georgia; 2. III-V Electronics and Optoelectronics Hardheim, Germany.
P2-102
 Spatially-Ingomogeneous Effects at the Interference of Electron Waves in Semiconductor 1D Nanostructures. V. A. Petrov and A. V. Nikitin
P2-103
 Optimization of double barrier doped heterostructures lGaAs/GaAs/AlGaAs/GaAs for ultra high frequency FET. G. Galiev 1, V. Kaminskii 1, V. Kul’bachinskii 2. 1. Institute of UHF semiconductor electronics, RAS, Moscow, Russia; 2. Moscow State University, Moscow, Russia.
P2-104
 Electronic band structure and semimetal-semiconductor transition in InAs/GaSb quantum wells. I. Lapushkin 1, A. Zakharova 1, S. T. Yen 2, K. A. Chao 3. 1. Institute of Physics and Technology of RAS, Moscow; 2. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China 3. Department of Physics, Lund University, Lund, Sweden.
P2-105
 The influence of classical and quantum-mechanical regions interaction on IV-characteristics of RTD, based on different materials. I. I. Abramov, I. A. Goncharenko, N. V. Kolomejtseva. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.
P2-106
 Room temperature photoreflectance investigation of undoped and doped GaAs/AlGaAs quantum well structures. L. P. Avakyants 1, P. Yu. Bokov 1, A. V. Chervyakov 1, G. B. Galiev 2, E. A. Klimov 2. 1. Physics faculty of M.V. Lomonosov Moscow State University, Moscow, Russia; 2. Institute of UHF Semiconductor Electronics RAS, Moscow, Russia.
P2-107
 Negative magnetoresistance due to electron-electron interaction in InGaAs/InP heterostructures. B. Podor 1,2, I. G. Savel`ev 3, Gy. Kovacs 4, G. Remenyi 5. 1. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, Hungary; 2. Budapest Polytechnic, Kando Kalman Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Budapest, Hungary; 3. A. F. Ioffe Physical Technical Institute, RAS, St. Petersburg, Russia; 4. Department of General Physics, Eotvos Lorand University, Budapest, Hungary; 5. CNRS Centre de Recherches sur les Tres Basses Temperatures et Laboratoire des Champs Magnetiques Intenses, Grenoble, France.
P2-108
 Influence of a transversal electric field to acoustic charge transport in the GaAs heterostructures. V. I. Еgоrкin, А. К. Моrоchа. Moscow Institute of Electronic Technology, Moscow, Russia.
P2-109
 Spin-dependent tunneling through a symmetric barrier structure with buried electrical polarization. V. Kantser, I. Bejenari, G. Birliba. LISES Institute of Applied Physics ASM, Kishinev, Moldova.
P2-110
 Change of a resistance and real structure under x-ray irradiation. V. Peregudov 1, V. Kirikov 2, E. Pashaev 2, S. Yakunin 2, A. Zaitsev 3, S. Tikhomirov2. 1. RRC «Kurchatov Institute», Moscow, Russia; 2. Institute of Crystallography, RAS, Moscow, Russia; 3. Moscow Institute of Radio Engineering and Automatics, Moscow, Russia.
P2-111
 Uncooled microbolometer based on microbridge structure technology. Yu. Chetverov2, S. Shapoval1. 1. Institute of Microelectronics Technology RAS, Chernogolovka, Russia; 2. R&D Corporation «Tsiklon», Moscow, Russia.
P2-112
 An investigation of relative current sensitivity of bipolar magnetotransistor. R. D. Tikhonov. SMC «Technological Centre» at the MSIEE, Moscow, Russia.
P2-113
 Numerical simulation of piezoresistive effect by ISE TCAD tools for microsystems engineering elements. T. Kroupkina1, O. Pankratov2, V. Amelichev2. 1. Moscow Institute of Electronic Engineering, Moscow, Russia; 2. SMC «Technological Center» Moscow, Russia.
P2-114
 Statistical Modeling for IC Manufacture: Hierarchical Approach. Yu. I. Bogdanov 1, N. A. Bogdanova 2 1. OAO Angstrem, Moscow, Russia 2. Moscow Institute of Electronic Engineering (Technical University), Moscow, Russia
P2-115
 The optimization of relative current sensitivity of bipolar magnetotransistor. A. Kozlov1, M. Reveleva1, R. Tikhonov2. 1. Moscow State Institute of Electronic Technology (Technical University), Moscow, Russia; 2. SMC «Technological Center» at the MSIEE, Moscow, Russia.
P2-116
 Investigation of the pressure influence on the characteristics of the silicon micromechanical oscillator. S. Timoshenkov, A. Boiko, V. Shilov, V. Rubchic. Moscow Institute of Electronic Engineering (Technical University), Moscow, Russia.
P2-117
 Microtechnologies & MEMS projects. E. N. Pyatishev, Y. Akulshin, A. Kazakin, M. Lurie. St. Petersburg State Polytechnical University, St. Petersburg, Russia.
P2-118
 To theory of electrophysical modification of microelectronic devices. V. M. Bogomol’nyi. Moscow State University of Service. Cherkizovo. Russia.
P2-119
 Fast switching high-voltage gallium arsenide devices. A. Rozhkov, V. Kozlov. Ioffe Physico-Technical Institute RAS, St. Petersburg, Russia
P2-120
 Phonon-induced decoherence of solid state charge-based quantum computer. L. Fedichkin 1, A. Fedorov 2, M. Yanchenko 3. 1. Center for Quantum Device Technology, Department of Physics and Department of Electrical and Computer Engineering, Clarkson University, Potsdam, NY, USA. 2. Department of Physics, Clarkson University, Potsdam, NY, USA. 3. Institute of Physics and Technology, RAS, Moscow, Russia.
P2-121
 Microscale regulation of quantum fluctuations of light at nonlinear selective reflection. Ja. Fofanov. Institute for Analytical Instrumentation, RAS, St. Petersburg, Russia.
P2-122
 Noise detector on base of a system of asymmetric loops with the persistent current. V. V. Aristov, S. V. Dubonos, V. I. Kuznetsov, A. A. Firsov, A. V. Nikulov, I. N. Zhilyaev. Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia.
P2-123
 Phase response of spin-dependent single-hole tunneling in silicon one-dimensional rings. N. T. Bagraev1, A. D. Bouravleuv1, W. Gehlhoff2, L. E. Klyachkin1, A. M. Malyarenko1, I. A. Shelykh3. 1. A. F. Ioffe Physico-Technical Institute, St.Petersburg, Russia; 2. Technische Universitat Berlin, Institut fur Festkorperphysik, Berlin, Germany; 3. St.Petersburg State Technical University, St.Petersburg, Russia.
P2-124
 Surface scattering in giant- magnetoresistance multilayered structures. V. V. V’yurkov, S. D. Ananiev, A. A. Orlikovsky. Institute of Physics and Technology of the RAS, Moscow, Russia.
P2-125
 Structure of Nano-Cavities by Magnetic Resonance Methods. E. B. Fel’dman, M. G. Rudavets. Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia.
P2-126
 About parallel computing on spatial rotations in spin mesomorphic structures. M. M. Nesterov, V. I. Tarkhanov. 1. St.Petersburg Institute of Informatics and Automation, RAS, St. Petersburg, Russia; 2. St. Petersburg State Polytechnical University, St. Petersburg, Russia.
P2-127
 Quantum States Estimation: Root Approach. Yu. I. Bogdanov. OAO «Angstrem», Moscow, Russia.
P2-128
CANCELLED!
P2-129
 The scanning single ion implanter for solid-state quantum computer. V. Zhukov. Institute for Informatics and Automation, RAS, Saint-Petersburg, Russia.
P2-130
 Regularities of power consumption in quasiadiabatic logical gates. V. Staroselsky, V. Losev. Moscow State Institute of Electronic Engineering, Moscow, Russia.
P2-131
 About application of logic opportunities of electron-hole plasma in the information — computing technologies. H. Karayan, A. Makaryan, G. Nikogosyan. Yerevan State University, Yerevan, Armenia.
P2-132
 Physical calculations and computers. H. Karayan, Sh. Martirosyan, H. Vardanyan. Yerevan State University, Yerevan, Armenia.
P2-133
 Correlation Characteristics in Multilevel Clustering Fault Model. Yu. I. Bogdanov 1, N. A. Bogdanova 2, A. V. Rudnev 1. 1. OAO Angstrem, Moscow, Russia; 2. Moscow Institute of Electronic Engineering (Technical University), Moscow, Russia.
P2-134
 The tools for numerical «renascence» procedure of electrical and processes parameters of complex devices of the integrated circuits. I. I. Abramov1, V. A. Dobrushkin 2, V. A. Tsurko 3, V. A. Zhuk 4. 1. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus; 2. Brown University, Providence, USA; 3. National Academy of Scienses, Institute of Mathematics, Minsk, Belarus; 4. Silvaco Data Systems Inc., Santa Clara, USA.
P2-135
 Silicone elastoplastics for microsystem engineering. P. A. Averichkin, V. A. Kalnov, A. A. Shlionsky. FGUP «GIREDMET», Moscow, Russia. Institute of Physics and Technology, RAS, Moscow, Russia
P2-136
 Quartz surface carbonilization. P. A. Averichkin, V. A. Kalnov, A. A. Shlionsky, N. I. Shmatov. FGUP «GIREDMET», Moscow, Russia. Institute of Physics and Technology, RAS, Moscow, Russia