History

General information

   The International Conference “Micro- and Nanoelectronics – 2018” (ICMNE-2018) including the extended Session “Quantum Informatics” (QI-2018)  will be held on October 1-5, 2018 at the park-hotel “Ershovo”, Zvenigorod, Moscow Region, Russia. It continues the series of the All-Russian Conferences “MNE-1999”, “MNE-2001”, “QI-2002” and the International Conferences “ICMNE-2003”, “QI-2004”, “ICMNE-2005”, “QI-2005”, “ICMNE-2007”, “QI-2007”, “ICMNE-2009”, “QI-2009”, “ICMNE-2012”, “QI-2012”, “ICMNE-2014”, “QI-2014”, “ICMNE-2016” and “QI-2016”.

   ICMNE is a biannual event covering the main fields of micro- and nanoelectronic technologies and device physics. ICMNE-2018 will be focused on recent progress in that area. The Conference will include the exhibition of equipment for micro- and nanoelectronics.

   In 2018, within the framework of the conference, a round table Russia-Japan will be held with the participation of leading scientists.

Scope:

Physics of micro- and nanodevices:

• Scaling challenges and opportunities for nanodevices
• Nanoscale transistors: CMOS FET, TFET, SET, molecular transistors, molecular switches, etc.
• Integrated memory devices, DRAM, ReRAM, FeRAM
• Devices with 1D and 2D channels
• Carbon micro- and nanoelectronics
• Solid state devices for THz generation and detection
• Magnetic micro- and nanostructures, spintronic devices
• Superconducting micro- and nanodevices and structures
• Devices for optoelectronics, photonics
• Sensors, micro- and nanoelectromechanical systems (MEMS, NEMS, BioMEMS)
• Device simulation and modeling

Technology and characterization of materials for micro- and nanoelectronics:

• Si, SOI, SiGe, A³B⁵, A²B⁶
• High-k dielectrics, low-k dielectrics
• Metal films for device structures
• 1D and 2D materials
• Magnetic materials, nanomagnetics
• Materials for optoelectronics and photovoltaic, metamaterials

Technologies and advanced equipment for micro- and nanoelectronics:

• Lithography: immersion, EUV, electron and ion lithography, nanoimprint
• Front-end of line (FEOL) processes in ULSI’s technology
• Back-end of line (BEOL) processes in ULSI’s technology
• 3D integration technologies
• Technologies for 2D materials (graphene, MoS₂, WS₂, etc.)
• Technologies for 1D structures (nanowires, nanotubes)
• Technologies for MEMS and NEMS
• Technologies for superconducting devices

Metrology:

• In situ processes monitoring and control (end-point detection, process smart sensors)
• Inspections, metrology, and characterization of micro- and nanostructures

Quantum informatics:

• Quantum computers: theory and experiments
• Quantum measurements
• Quantum algorithms
• Quantum communications

Organizers and Sponsors:

• Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia
• NIIME, Moscow, Russia
• Russian Foundation for Basic Research, Moscow, Russia
• Russian Academy of Sciences, Division of Nano- and Information Technologies, Russia
• SPIE – The International Society for Optical Engineering
• Rzhanov Institute of Semiconductor Physics of the Russian Academy of Sciences (the Siberian Branch), Novosibirsk, Russia
• M.V. Lomonosov Moscow State University, Moscow, Russia
• P.G. Demidov Yaroslavl State University, Yaroslavl, Russia
• TechoInfo, Ltd., Wembley, UK
• NIX Company, Moscow, Russia

Language:

   The working language of ICMNE-2018 is English.

Abstracts Submission:

   You can download the single page abstract template in the Downloads section of the Conference website. Please, submit the files with abstracts to the ICMNE-2018 Local Organizing Committee at the address icmne2018@gmail.com.

Now you can download the Book of Abstracts.

Proceedings:

   The Proceedings of this conference are published in the SPIE Digital Library along with nearly 460,000 papers from other outstanding conferences, SPIE Journals and chapters from SPIE Press books.

   SPIE will publish the full-text papers in a separate volume of the Proceedings of SPIE dedicated to ICMNE-2018 after the Conference termination. According the rules of SPIE the full-text papers can be published in the Conference proceedings only if the corresponding oral talks or posters were presented by the authors at the Conference.

   The authors should prepare manuscripts of the full-text papers according to the rules of the SPIE Proceedings (see the Downloads section) and submit it by the Author Submission & Chair Review System service. The manuscripts should be written in clear and concise English. The paper length should be in the range of 6-12 pages.

   The full-text manuscripts should be sent to SPIE by November 12, 2018. Authors should also transfer the electronic copy of manuscripts and the filled Copyrights Forms to the ICMNE-2018 Local Organizing Committee. Otherwise the manuscript will be rejected.

   The papers not presented and discussed at ICMNE-2018 will not be published in the Proceedings.

 

Programme of ICMNE-2016 is available (pdf)

Information for the speakers

General information

   The International Conference “Micro- and Nanoelectronics – 2016” (ICMNE-2016) including the extended Session “Quantum Informatics” (QI-2016)  will be held on October 3-7, 2016 at the “Ershovo” resort in Zvenigorod, Moscow Region, Russia. It continues the series of the All-Russian Conferences “MNE-1999”, “MNE-2001”, “QI-2002” and the International Conferences “ICMNE-2003”, “QI-2004”, “ICMNE-2005”, “QI-2005”, “ICMNE-2007”, “QI-2007”, “ICMNE-2009”, “QI-2009”, “ICMNE-2012”, “QI-2012″,”ICMNE-2014”, and “QI-2014.

   ICMNE is the biannual event which is dedicated to the physics of integrated micro- and nanoelectronic devices and related micro- and nanotechnologies. ICMNE-2016 will be focused on recent progress in those areas. The Conference will include the exhibition of equipment for micro- and nanoelectronics.

Scope:

Materials and films for micro- and nanoelectronic structures:

• Si, SOI, DOI, SiGe, A³B⁵, A²B⁶
• High-k dielectrics, low-k dielectrics
• Metals for gate stacks, contact systems, and metallization for nanoscale devices
• Magnetic materials, nanomagnetics
• 1D and 2D materials
• Materials for optoelectronics and photovoltaic, metamaterials

Physics of micro- and nanodevices:

• More Moore, beyond CMOS, and more than Moore trends
• Nanoscale transistors: CMOS FET, TFET, SET, molecular transistors, and others
• Integrated memory devices, DRAM, ReRAM, FeRAM
• Magnetic micro- and nanostructures, spintronic devices
• Superconducting micro- and nanodevices and structures
• Devices of optoelectronics, photonics
• Micro- and nanoelectromechanical systems (MEMS, NEMS)
• Simulation and modeling

Technologies and advanced equipment for micro- and nanodevices and ICs:

• Sub-65 nm lithography: DUV, immersion, EUV, electron and ion lithography, nanoimprint
• Front-End of Line (FEOL) processes in ULSI’s technology
• Back-End of Line (BEOL) processes in ULSI’s technology
• Technologies for 2D materials (graphene, MoS₂, WS₂, etc.)
• Technologies for 1D structures (nanowires, nanotubes)
• Technologies for MEMS and NEMS
• Technologies for superconducting devices

Metrology:

• In situ processes monitoring
• Inspections, metrology, and characterization of micro- and nanostructures

Quantum informatics:

• Quantum computers: theory and experiments
• Quantum measurements
• Quantum algorithms
• Quantum communications

Organizers and Sponsors:

• Institute of Physics and Technology of the RAS, Moscow, Russia
• JSC Molecular Electronics Research Institute, Zelenograd, Russia
• Russian Foundation for Basic Research, Russia
• Russian Academy of Sciences (RAS), Division of Nano- and Information Technologies, Russia
• Scientific Council of the RAS on Physical and Chemical Fundamentals of Semiconductor Materials Science, Russia
• SPIE – The International Society for Optical Engineering, USA – the publisher of the Conference proceedings
• Institute of Semiconductor Physics of the RAS, Novosibirsk, Russia
• Lomonosov Moscow State University, Moscow, Russia
• Yaroslavl Demidov State University, Yaroslavl, Russia
• TechoInfo, Ltd., Wembley, UK
• NIX Company, Moscow, Russia
• SemiTEq JSC, St. Peterburg, Russia

Language:

   The working language of ICMNE-2016 is English.

Abstracts Submission:

   Contributions to the Conference are welcome from the academic community, universities, as well as from the R&D divisions of the industry. The Program Committee will give preference to the papers which contain the results of recent original works consistent with the Conference scope. The abstracts should be written in clear and concise English.

   The Conference program will be comprised of invited and contributed papers. The contributed papers will be reviewed by the members of the Program Committee on the basis of submitted abstracts for their being in theme with the Conference, and for their scientific quality. The Program Committee will determine the session (oral or poster) on which the corresponding paper will be presented. Author’s preferences will also be taken into consideration.

   You can download the single-page abstract template (Microsoft Word file). Please, submit the files with abstracts to the ICMNE-2016 Local Organizing Committee at the address icmne2016@gmail.com. Deadline for abstracts submission is August 1, 2016.

    The Book of Abstracts of the accepted papers will be compiled before the conference opening.

Taking into account the wish of potential participants of the Conference, the Organizing Committee has decided to shift the deadline for abstracts submission to August 10, 2016.

Proceedings:

   The Proceedings of ICMNE-2016 are published in the SPIE Digital Library along with over 400,000 papers from other outstanding conferences and SPIE Journals and books from SPIE Press.

   SPIE will publish the full-text papers in a separate volume of the Proceedings of SPIE dedicated to ICMNE-2016 after the Conference termination. According the rules of SPIE the full-text papers can be published in the Conference proceedings only if the corresponding oral talks or posters were presented by the authors at the Conference.

   The authors should prepare manuscripts of the full-text papers according to the rules of the SPIE Proceedings (see the Downloads section) and submit it by the Author Submission & Chair Review System service. The manuscripts should be written in clear and concise English. The paper length should be in the range of 4-12 pages.

   The full-text manuscripts should be sent to SPIE by November 8, 2016. Authors should also transfer the electronic copy of manuscripts and the filled Copyrights Forms to the ICMNE-2016 Local Organizing Committee. Otherwise the manuscript will be rejected.

   The papers not presented and discussed at ICMNE-2016 will not be published in the Proceedings.

   Now you can download Book of Abstracts.

Information for Speakers

   Working language

   The working language of the conference is English.

   Oral presentations

   A laptop with a multimedia projector as well as an overhead apparatus will be available for the oral presentations. The CDs or USB-flash memory units are recommended as file carriers. The recommended formats of presentation are *.ppt (Microsoft Power Point) or *.pdf (Adobe Acrobat). To avoid any problems with compatibility, use the PDF format for your presentation.

   Posters

   The poster size should not exceed 120 cm x 120 cm. There will be pins to fasten the poster’s sheets.

Scientific programme

Information for Speakers

General information

 The International Conference “Micro- and Nanoelectronics – 2014” (ICMNE-2014) including the extended Session “Quantum Informatics” (QI-2014)  will be held on October 6-10, 2014 at the “Ershovo” resort, Zvenigorod, Moscow Region, Russia. It continues the series of the All-Russian Conferences “MNE-1999”, “MNE-2001”, “QI-2002” and the International Conferences “ICMNE-2003”, “QI-2004”, “ICMNE-2005”, “QI-2005”, “ICMNE-2007”, “QI-2007”, “ICMNE-2009”, “QI-2009”, “ICMNE-2012”, and “QI-2012”.

   ICMNE is a biannual event covering the main fields of micro- and nanoelectronic technologies and device physics. ICMNE-2014 will be focused on recent progress in that area. The Conference will include the exhibition of equipment for micro- and nanoelectronics.

Scope:

Micro- and nanoelectronic materials and films:

• SOI, Si, SiGe, A³B⁵, A²B⁶
• Thin films, high-k dielectrics, low-k dielectrics
• Metal gates, systems for contacts and metallization in nanoscale devices
• Magnetic materials, nanomagnetics
• Nanotubes, graphene
• Materials for optoelectronics and photovoltaic, metamaterials

Micro- and nanoelectronic technologies and equipment:

• Sub-100 nm lithographies: DUV, EUV, electron and ion lithography, nanoimprint
• Plasma and ion-beam processing for micro- and nanoelectronics
• Beam line and plasma immersion ion implantation
• CVD, MBE

Metrology:

• Processes monitoring, end-point detection
• Metrology and characterization of micro- and nanostructures

Physics and technologies of micro- and nanodevices:

• Nanotransistors: MOSFET, SET, TFET, and others
• Integrated memory devices, memristors
• Magnetic micro- and nanostructures
• Spintronic devices
• Superconducting micro- and nanodevices and structures
• Devices of optoelectronics, photonics
• Micro- and nanoelectromechanical systems (MEMS, NEMS)

Simulation and modeling:

• Simulation of technological processes
• Simulation and modeling of micro- and nanoelectronic devices

Silicon-on-insulator and low-dimensional structures:

• Technology and experiments
• Devices
• Theory and simulation

Quantum informatics:

• Quantum computers: theory and experiments
• Quantum measurements
• Quantum algorithms
• Quantum communications

Organizers and Sponsors:

• Institute of Physics and Technology, Moscow, Russia
• JSC Mikron, Zelenograd, Russia
• Russian Foundation for Basic Research, Moscow, Russia
• Federal Agency of Scientific Organizations, Moscow, Russia
• Russian Academy of Sciences (RAS), Division of Nano- and Information Technologies, Russia
• Scientific Council of the RAS on Physical and Chemical Fundamentals of Semiconductor Materials Science, Russia
• SPIE – The International Society for Optical Engineering
• Institute of Semiconductor Physics, Novosibirsk, Russia
• Lomonosov Moscow State University, Moscow, Russia
• Yaroslavl Demidov State University, Yaroslavl, Russia
• TechoInfo, Ltd., Wembley, UK
• NIX Company, Moscow, Russia

Language:

   The working language of ICMNE-2014 is English.

Abstracts Submission:

   You can download the single page abstract template in the Downloads section of the Conference website. Please, submit the files with abstracts to the ICMNE-2014 Local Organizing Committee at the address icmne2014@gmail.com.

Deadline for abstracts submission is August 1, 2014.

Taking into account the wish of potential participants of the Conference, the Organizing Committee has decided to shift the deadline for abstracts submission to August 15, 2014.

   Now you can download Book of Abstracts.

Proceedings:

   The Proceedings of this conference are published in the SPIE Digital Library along with nearly 300,000 papers from other outstanding conferences and articles from SPIE Journals. SPIE will publish the full-text papers in a separate volume of the Proceedings of SPIE dedicated to ICMNE-2014 after the Conference termination.

   The authors should prepare manuscripts of the full-text papers according to the rules of the SPIE Proceedings (see the Downloads section) and submit it by the Author Submission & Chair Review System service.

   The full-text manuscripts should be sent to SPIE by November 10, 2014. Authors should also transfer the electronic copy of manuscripts and the filled Copyrights Forms to the ICMNE-2014 Local Organizing Committee. Otherwise the manuscript will be rejected.

   The papers not presented at ICMNE-2014 will not be published in the Proceedings.

   Contributions on the topics of the Conference are welcome from the academic community, universities, as well as from the industry. The Program Committee will give preference to the papers which contain results of recent original works consistent with the Conference scope. The abstracts and full manuscripts should be written in clear and concise English.

   The Conference program will comprise of invited and contributed papers. The contributed papers will be reviewed by the members of the Program Committee on the basis of submitted abstracts for their being in theme with the Conference and for their scientific quality. The Program Committee will determine the session (oral or poster) on which the paper will be presented. Author’s preferences will also be taken into consideration.

Information for Speakers

   Oral Presentations

   A laptop with a multimedia projector as well as an overhead apparatus will be available for the oral presentations. The CDs or USB-flash memory units are recommended as file carriers. The recommended formats of presentation are *.ppt (Microsoft Power Point) or *.pdf (Adobe Acrobat). To avoid any problems with compatibility, use the PDF format for your presentation.

   Posters

   The poster size should not exceed 120 cm x 120 cm.

   Publishing of full text presentations

   Selected papers presented and discussed at ICMNE-2014 can be issued in Proceedings of SPIE as articles from 6 to 15 pages long (including figures). Manuscripts of the papers should be forwarded to the Organizing Committee not later than 1 month after the Conference. The manuscripts and the Copyright Forms should be prepared according to the PDF templates of SPIE that may be found at the page Downloads at the Conference website. The manuscripts will not be edited by the Organizing Committee. The Copyright Form should be signed by all of the authors.

Scientific programme

Information for Speakers

General information

The International Conference “Micro- and Nanoelectronics – 2012” (ICMNE-2012) including the extended Session “Quantum Informatics” (QI-2012) and the Workshop “Silicon-on-Insulator” (SOI-2012)  will be held on October 1-5, 2012 at the “Lipki” resort, Zvenigorod, Moscow Region, Russia. It continues the series of the All-Russian Conferences “MNE-1999”, “MNE-2001”, “QI-2002” and the International Conferences “ICMNE-2003”, “QI-2004”, “ICMNE-2005”, “QI-2005”, “ICMNE-2007”, “QI-2007”, “ICMNE-2009”, and “QI-2009”.

   ICMNE is a biannual event covering the main fields of micro- and nanoelectronic technologies and device physics. ICMNE-2012 will be focused on recent progress in that area. The Conference will include the exhibition of equipment for micro- and nanoelectronics.

Scope:

Micro- and nanoelectronic materials and films:

• SOI, Si, SiGe, A³B⁵, A²B⁶
• Thin films, high-k dielectrics, low-k dielectrics
• Metal gates, systems for contacts and metallization in nanoscale devices
• Magnetic materials, nanomagnetics
• Nanotubes, graphene
• Materials for optoelectronics and photovoltaic, metamaterials

Micro- and nanoelectronic technologies and equipment:

• Sub-100 nm lithographies: DUV, EUV, electron and ion lithography, nanoimprint
• Plasma and ion-beam processing for micro- and nanoelectronics
• Beam line and plasma immersion ion implantation
• CVD, MBE

Metrology:

• Processes monitoring, end-point detection
• Metrology and characterization of micro- and nanostructures

Physics and technologies of micro- and nanodevices:

• Nanotransistors: MOSFET, SET, TFET, and others
• Integrated memory devices, memristors
• Magnetic micro- and nanostructures
• Spintronic devices
• Superconducting micro- and nanodevices and structures
• Devices of optoelectronics, photonics
• Micro- and nanoelectromechanical systems (MEMS, NEMS)

Simulation and modeling:

• Simulation of technological processes
• Simulation and modeling of micro- and nanoelectronic devices

Silicon-on-insulator and low-dimensional structures:

• Technology and experiments
• Devices
• Theory and simulation

Quantum informatics:

• Quantum computers: theory and experiments
• Quantum measurements
• Quantum algorithms
• Quantum communications

Organizers and Sponsors:

• Russian Academy of Sciences (RAS), Division of Nano- and Information Technologies, Russia
• Russian Foundation for Basic Research, Russia
• Scientific Council of the RAS on Physical and Chemical Fundamentals of Semiconductor Materials Science, Russia
• Institute of Physics and Technology of the RAS (FTIAN), Moscow, Russia
• Educational-scientific centre “MSU-FTIAN”, Moscow, Russia
• SPIE – The International Society for Optical Engineering
• Institute of Semiconductor Physics (ISP), Siberian Branch of the RAS, Novosibirsk, Russia
• Lomonosov Moscow State University (MSU), Moscow, Russia
• Yaroslavl Demidov State University, Yaroslavl, Russia
• TechoInfo, Ltd., Wembley, UK
• NIX Company, Moscow, Russia

Language:

   The working language of ICMNE-2012 is English.

Abstracts Submission:

   You can download the single page abstract template in the Downloads section of the Conference website. Please, submit the files with abstracts to the ICMNE-2012 Local Organizing Committee at the address icmne2012@ftian.ru.

Deadline for abstracts submission is June 30, 2012.

Taking into account the wish of potential participants of the Conference, the Organizing Committee has decided to shift the deadline for abstracts submission to July 31, 2012.

   Now you can download Book of Abstracts.

Proceedings:

   The Proceedings of this conference are published in the SPIE Digital Library along with nearly 300,000 papers from other outstanding conferences and articles from SPIE Journals. SPIE will publish the full-text papers in a separate volume of the Proceedings of SPIE dedicated to ICMNE-2012 after the Conference termination.

   The authors should prepare manuscripts of the full-text papers according to the rules of the SPIE Proceedings (see the Downloads section) and submit it by the Author Submission & Chair Review System service.

   The full-text manuscripts should be sent to SPIE by November 5, 2012. Authors should also transfer the electronic copy of manuscripts and the filled Copyrights Forms to the ICMNE-2012 Local Organizing Committee. Otherwise the manuscript will be rejected.

   The papers not presented at ICMNE-2012 will not be published in the Proceedings.

   Contributions on the topics of the Conference are welcome from the academic community, universities, as well as from the industry. The Program Committee will give preference to the papers which contain results of recent original works consistent with the Conference scope. The abstracts and full manuscripts should be written in clear and concise English.

   The Conference program will comprise of invited and contributed papers. The contributed papers will be reviewed by the members of the Program Committee on the basis of submitted abstracts for their being in theme with the Conference and for their scientific quality. The Program Committee will determine the session (oral or poster) on which the paper will be presented. Author’s preferences will also be taken into consideration.

Information for Speakers

   Oral Presentations

   A laptop with a multimedia projector as well as an overhead apparatus will be available for the oral presentations. The CDs or USB-flash memory units are recommended as file carriers. The recommended formats of presentation are *.ppt (Microsoft Power Point) or *.pdf (Adobe Acrobat). To avoid any problems with compatibility, use the PDF format for your presentation.

   Posters

   The poster size should not exceed 120 cm x 120 cm.

   Publishing of full text presentations

   Selected papers presented and discussed at ICMNE-2012 can be issued in Proceedings of SPIE as articles from 8 to 12 pages long (including figures). Manuscripts of the papers should be forwarded to the Organizing Committee not later than 1 month after the Conference. The manuscripts and the Copyright Forms should be prepared according to the PDF templates of SPIE that may be found at the page “Downloads” at the Conference website. The manuscripts will not be edited by the Organizing Committee. The Copyright Form should be signed by all of the authors.

Scientific programme

Information for Speakers

General information

   The International Conference “Micro- and nanoelectronics – 2009” (ICMNE-2009) including extended Session “Quantum Informatics” (QI-2009)   will be held in October 5-9, 2009 at the holiday hotel “Lipki”, Zvenigorod, Moscow region, Russia. It will continue the series of All-Russian Conferences “MNE-1999”, “MNE-2001”, “QI-2002”, and International Conferences “ICMNE-2003”, “QI-2004”, “ICMNE-2005”, “QI-2005”. “ICMNE-2007”, “QI-2007”.

   Conference ICMNE is biannual event covering majority of area of micro- and nanoelectronic technologies, physics and devices. ICMNE-2009 is focused on recent progress in that area. The Conference will include the exhibition on equipment for micro- and nanoelectronics.

Scope:

Micro-, nanoelectronic materials and films:

• SOI, strained Si, SiGe, GaAs, GaN
• Thin films, high-k dielectrics, low-k dielectrics
• Metal gates, systems for contacts and metallization in nanoscale devices
• Magnetic materials. Nanomagnetics
• Nanotubes
• Materials for optoelectronics and photovoltaic, metamaterials

Micro- and nanoelectronic technologies and equipment:

• Sub-100 nm lithographies: DUV, EUV, Electron and Ion lithography, Nanoimprint.
• Plasma processing for micro- and nanoelectronics.
• Beam line and Plasma immersion Ion Implantation
• CVD, MBE.

Metrology:

• Processes monitoring, end-point detection
• Metrology and characterization of micro- and nanostructures

Physics and technologies of micro- and nanodevices:

• Nanotransistors: MOSFET, SET. Quantum dot memory and logic circuits.
• Magnetic micro- and nanostructures
• Spintronics
• Superconducting micro- and nanodevices and systems
• Molecular nanoelectronics
• Devices of optoelectronics, photonics
• Micro and nano-electromechanical systems (MEMS, NEMS).

Simulation and modeling:

• Simulation of technological processes
• Simulation and modeling of micro- and nanoelectronic devices
• IC’s modeling

Quantum informatics:

• Quantum computer and complex quantum systems modeling (quantum computer problems, computer simulation of quantum systems, decoherence, entanglement)
• Quantum information processing (quantum information, applications of quantum methods)

• Quantum cryptography (quantum channels, nonlocality, security, error correction)

Organizers and Sponsors:

• Russian Academy of Sciences (RAS). Division of Nano- and Information Technologies
• Ministry of Education and Science of Russian Federation
• Russian Foundation for Basic Research
• Scientific Council “Fundamental Problems of the Device Development for Informational, Computational and Controlling Systems” (Russia)
• Scientific Council on Physical and Chemical Fundamental of Semiconductor Material Science (Russia)
• Institute of Physics & Technology of RAS (FTIAN), Moscow, Russia
• Educational-scientific centre “MSU-FTIAN”
• SPIE, Cooperating Organization
• Institute of Semiconductor Physics (ISP) of RAS, Siberian Branch, Novosibirsk, Russia
• Lomonosov’s Moscow State University (MSU), Russia
• Yaroslavl State University, Russia
• Moscow Institute of Electronic Engineering (TU) (MIEE), Zelenograd, Russia
• Micron Corp., Russia
• INTEL, Inc.
• Fraunhofer Institute of Integrated Systems and Device Technology (FhG IIS-B), Germany
• Carl Zeiss AG, Germany
• TechoInfo Ltd., UK
• NT-MDT Co., Russia
• NIX company, Russia

Language:

   The official language is English

Abstracts Submission:

   You can download a single page abstract template and requirements for full manuscript publication in the Downloads section of Conference website.    Please, submit the files with Abstracts to ICMNE-2009 Local Organizing Committee by address icmne2009@ftian.ru.

Deadline for abstracts submission is August 10, 2009

Proceedings:

   SPIE (http://www.spie.org) will publish the full text of papers in the separate volume of Proceedings of SPIE dedicated to ICMNE-2009 after Conference termination.

   The authors should prepare full manuscripts of papers according the rules of SPIE Proceedings (see Download section) and submit it by service MySPIE (link http://myspie.org/submission/index.cfm?fuseaction=act_AbstractInit&EventId=898506).
Dear Authors: On the manuscript submission page, please ignore the text that reads, ‘SUBMIT AN ABSTRACT OVERVIEW.’ This is indeed the correct place to submit your full manuscript.

   Text of full manuscripts should be sent to SPIE by November 9, 2009. Please post the attached manuscript specifications and SPIE transfer of copyright form to the ICMNE-2009 Local Committee.

   Papers not presented at the ICMNE will not be published in the Proceedings.

   Contributions on the topics of the Conference are welcome from the academic community, universities as well as from the industry. About 80 contributions will be selected as oral presentations; all of others will be presented in form of poster. Program Committee will give preference to the papers which are containing results of recent original works consistent with Conference scope. Abstracts and full manuscripts should be written in clear and concise English.

   The Conference program will be comprised of invited and contributed papers. Contributed papers will be reviewed by the members of the Program Committee on the basis of submitted abstracts for their being in theme with the Conference, and for their scientific quality. The Program Committee will determine the session (oral or poster) on which the paper will be presented. Author’s preferences are taken into consideration.

Information for Speakers

   Oral Presentations

   The notebook with multimedia projectors and overhead apparatus will be available for oral presentation. The CDs or USB-flash memory for oral presentations are recommended as file carriers. Recommended formats of presentation are application of Microsoft Power Point (*.PPT) or Adobe Acrobat application (*.PDF).

   Posters

   Poster size should not exceed 120×120 cm.

   Publishing of full text presentations

   Selected papers presented and discussed at ICMNE-2007 can be issued in Proceedings of SPIE as article from 8 to 12 pages including figures. Manuscripts of papers should be forwarded to Org. Committee not later than 1 month after Conference. Manuscripts and Copyright Form are prepared according the template of SPIE pointed at the page “Downloads” at conference website. Manuscripts will be accepted as file PDF and not edited by Org. Committee. Copyright Form should be signed all of authors.

 

ICMNE-2007 AND SYMPOSIUM QI-2007 SCIENTIFIC PROGRAM

(Final Edition)
(Oral Presentations)

Download files:
ICMNE-2007 Oral Presentations
ICMNE-2007 Posters
ICMNE-2007 Delayed Posters
QI-2007 Oral Presentations

Monday, October 1st , 2007
9.00 – …	Registration & Accommodation
13.00 – 14.00	Lunch
Conference hall Special Session. Presentations of Hi-Tech Companies.
16.00	S1-1	NANOFABS – basic systems for new developments in the field of nanoelectronics & micro-, nanomechanics. V.A. Bykov, V.V. Kotov, V.V. Polyakov, V. Atepalikhin. NT-MDT Company, Moscow , Russia .
16.30	S1-2	The future of nano technology based on electron microscopy. Uwe Schubert. Nano Technology Systems Division Carl Zeiss SMT AG
17.00	S1-3	The inspection of SEM into the third dimension. Peter Gnauck. Nano Technology Systems Division Carl Zeiss SMT AG
17.30	S1-4	Will be announced later
18.00	Welcome Party
19.00	Dinner
Tuesday, October 2nd , 2007
Conference hall
8.00	Breakfast
8.40	Welcome remarks E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow K.A. Valiev, Program Chair, IPT RAS, Moscow
Plenary Session Session Chairman: Alexander Orlikovsky, Institute of Physics &Technology RAS, Russia
8.50	L1-01	KEYNOTE: Materials and MOS device architectures for the sub-32 nm node. Th. Skotnicki and S. Monfray. ST Microelectronics, Crolles , France
9.30	L1-02	INVITED: High-k dielectric films for advanced microelectronics. A. Toriumi. University of Tokyo , Japan
10.10	L1-03	INVITED: Low-k dielectrics for microelectronics. M. Baklanov . IMEC, Leuven , Belgium .
10.40	L1-04	INVITED: Bottom-up interconnect formation possibility using supercritical fluids: beyond scalability. E.   Kondoh. University of Yamanashi, Japan.
11.10	L1-05	INVITED: Physics and Applications of Graphene. K.S. Novoselov 1 , S.V. Morozov 2 , A.K. Geim. 1. School of Physics and Astronomy, University of Manchester , Manchester , UK 2. Institute for Microelectronics Technology, Chernogolovka , Russia
11.40 – 12.00	Coffee break. Winter garden
Conference Hall Session 1. Sub-100 nm Lithography Session Chairman: Kamil Valiev, Institute of Physics &Technology RAS, Russia
12.00	O1-01	Manufacturing and investigation of objective lens for ultrahigh resolution lithography facilities. N. Chkhalo, E. Kluenkov, A. Pestov, D. Raskin, N. Salashchenko. Institute for Physics of Microstructures, RAS, Nizhny Novgorod , Russia
12.20	O1-02	Multilayer Zr/Si filters for EUV lithography and for radiation source metrology. M.S. Bibishkin 1 , N.I. Chkhalo 1 , S.A.  Gusev 1 , E.B. Kluenkov 1 , A.Ja. Lopatin 1 , V.I. Luchin 1 , A.E. Pestov 1 , N.N. Salashchenko 1 , L.A.  Shmaenok 2 , N.N. Tsybin 1 . 1.  Institute for Physics of Microstructures, RAS, Nizhny Novgorod , Russia . 2.   PhysTeX, Vaals , Netherlands
12.40	O1-03	Alternating Phase Shift Mask design problem statement. M. Myachin 1 , N. Savinski 2 , G. Krasnikov , 3 N. Shelepin 3 , O. Gutshin 3 , I.  Sirtsov 3 , A. Sutyagin 3 . 1.  Yaroslavl State University , Yaroslavl , Russia 2.   Institute of Physics &Technology, RAS, Yaroslavl Branch , Russia , 3. JSC Mikron , Zelenograd, Moscow
13.00	O1-04	Modification of nanolithography method using optical tweezers for planar nanostructures fabrication. I.V. Soboleva, A.G. Zhdanov, A.A. Fedyanin. Faculty of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia
Auditorium A Session 2. Simulation and Modeling I Session Chairman: Tariel Makhviladze, Institute of Physics &Technology RAS, Russia
12.00	L1-06	INVITED: New Results of Modeling in Micro- and Nanoelectronics. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 2 . 1. Institute for Problems in Mechanics, RAS, Moscow , Russia . 2.  Institute of Physics and Technology, RAS, Moscow , Russia
12.30	O1-05	The process window TCAD methodology for DFM in the field of deep submicron nodes and nanoscale transistors. Y. Chaplygin, M. Korolev, T. Krupkina. Moscow Institute of Electronic Engineering, Moscow , Russia
12.50	O1-06	The TCAD estimation of electrical stability for different layout SOI MOSFETs. T. Krupkina. Moscow Institute of Electronic Engineering, Moscow , Russia
13.10	O1-07	Technology modelling of microsystem technics devices. A. Kozlov, D. Rodionov. Moscow Institute of Electronic Technology, Moscow , Zelenograd , Russia
Auditorium B Session 3. Defects and Impurities in Semiconductors Session Chairman: Eugene Yakimov, Institute of Microelectronics Technology , Russia
12.00	O1-08	Spatial distribution of electrically active defects in strained-Si / SiGe / Si heterostructures. N. Yarykin 1 , E. Yakimov 1 , G. Rozgonyi 2 . 1.  Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia . 2. Department of Materials Science and Engineering, North Carolina State University , Raleigh , NC , USA
12.20	O1-09	Stable silicon resistors at 20-160 ° C due to divacancy involving in high purity neutron doped Si. G.N. Kamaev, M.D. Efremov, V.A. Stuchinsky, B.I. Mihailov, S.G. Kurkin. Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia
12.40	O1-10	Application of SQUID for detection of a small quantity of spin impurity in semiconductors. A.I.   Golovashkin 1 , A.L.   Karuzskiy 1 , A.A.   Orlikovsky 2 , V.V.   Privezentsev 2 , A.M.   Tshovrebov 1 . 1. Lebedev Physical Institute, Russian Academy of Science , Moscow , Russia ; 2. Institute of Physics & Technology, Russian Academy of Science , Moscow , Russia
13.00	O1-11	Determination of isotope ratio of boron in B-alloyed crystals of diamond by SIMS. A.N. Pustovit 1 , E.A. Ekimov 2 , I.I. Vlasov 3 , A.F. Vyatkin 1 . 1.  Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia . 2.  Vereshchagin Institute for High Pressure Physics, RAS, Troitsk, Moscow region, Russia . 3.  General Physics Institute, RAS, Moscow , Russia
13.30 – 14.30	Lunch
Conference Hall Session 4. Nanodevices and Nanostructures I Session Chairman: Oleg Pchelyakov, Institute of Semiconductor Physics SB RAS, Russia
14.30	O1-12	From molecularly to atomically thin solid nanoshells: fabrication, properties and applications. V.Ya. Prinz, V.A. Seleznev, S.V. Golod. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
14.50	O1-13	Fabrication of nanostructures for stamps production used in nanoimprint lithography by means of focused ion beam technique. A.F. Vyatkin 1 , Yu.   A. Agafonov 1 , V.I. Zinenko 1 , Yu. M. Lunin 1 , B.G. Freikman 1 , V.I. Balykin 2 , P.N. Melent’ev 2 . 1. Institute of Microelectronics Technology, RAS, Moscow district, Chernogolovka, Russia . 2. .Institute of spectroscopy, RAS, Moscow district, Troitsk
15.10	O1-14	Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon. V. Sverdlov 1,2 , H. Kosina 1 , and S. Selberherr 1 . 1. Institute for Microelectronics, TU Wien, Wien , Austria . 2. V.A. Fock Institute of Physics, State University of St.Petersburg , St.Petersburg , Russia
15.30	O1-15	Graphene Nanoelectronics: Device Electrostatics and Kinetics. G. I. Zebrev. Department of Microelectronics, Moscow Engineering Physics Institute, Russia
15.50	O1-16	Quantum Conductivity of Linear Chain Carbon. M.B. Guseva, V.G.  Babaev , N.D.  Novikov, V.V. Khvostov. Department of Physics, Moscow State University , Moscow , Russia
Auditorium A Session 5. MEMS & Sensors Session Chairman: Vladimir Lukichev, Institute of Physics &Technology RAS, Russia
14.30	O1-17	Divergence Instability o f a Extensible Microplate Subjected to Nonlinear Electrostatic Pressure. Gh.   Rezazadeh 1 , H.   Yagubizade 1 , Y.   Alizadeh 2 . 1. Mech. Eng. Dept., Urmia University , Urmia , Iran . 2. Mech. Eng. Dept., Arak Azad University , Arak , Iran
14.50	O1-18	Simulation, formation and dynamic characteristics of e lectrostatically actuated switches . A.V.   Postnikov 1 , I.I.   Amirov 1 , V.V.   Naumov 1 , V.A.   Kalnov 2 . 1. Institute of microelectronics, Russian Academy of Science, Yaroslavl, Russia 2. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
15.10	O1-19	High energy microelecromechanical oscillator based on the electrostatic microactuator. I. Baginsky, E. Kostsov , V. Sobolev. Institute of Automation and Electrometry, SB RAS, Novosibirsk , Russia
15.30	O1-20	Application of single crystals of lithium niobate with bidomain structure for creation actuators of micro and nano moving ranges. V.Antipov, A.Bykov, M.Malinkovich 1 , Y.Parkhomenko. Moscow Institute Of Steel And Alloys (Technological University), Moscow , Russia
15.50	O1-21	Electromechanical energy conversion in the nanometer gaps. E.G.   Kostsov. Institute of Automation and Electrometry, SB RAS, Novosibirsk , Russia
16.10	O1-22	Flicker-noise gas sensors as basis elements of microanalytical systems. M. Makoviychuk. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
Auditorium B Session 6. Photonics and Optoelectronics Session Chairman: Sergey Nikitov, Institute of Radioengineering and Electronics RAS, Russia
14.30	O1-23	Distant- and interference-spatial spectroscopy of evanescent waves . M.Yu. Barabanenkov*, Yu.N.  Barabanenkov , S.A.  Nikitov. * Institute of Microelectronics Technology, RAS, Chernogolovka , Russia . Institute of Radioengineering and Electronics, RAS, Moscow , Russia
14.50	O1-24	Polarization switching dynamics of nonlinear ferroelectric photonic crystals. N.E. Sherstyuk 1 , E.D. Mishina 1 , V.M. Muhortov 2 . 1. Moscow State Institute of Radioenginering, Electronics and Automation, Moscow , Russia ; 2. South Scientific Center of Russian Academy of Science , Rostov-on-Don , Russia
15.10	O1-25	Magnetoplasmonic effects in two-dimensional photonic crystals. A.G. Zhdanov 1 , T.V. Dolgova 1 , A.A. Fedyanin 1 , A.V. Baryshev 2 , A.B. Khanikaev 2 , H. Uchida 2 , and M. Inoue 2 . 1.  Dept. of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia 2. Dept. of Electrical and Electronic Eng. , Toyohashi University of Technology , Toyohashi , Japan
15.30	O1-26	Application of Ge- Si Nanostructures in Photovoltaic. O.P. Pchelyakov. Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia
15.50	O1-27	Red Channel Frequency-Contrast Characteristics Correction Method of the Matrix Photoreceiver Based on Simplified Design of the Photocells with Deep Color Separation. I.V. Vanyushin 2 , A.V. Verhovtseva 2 , A.V. Gergel’ 1 , N.M. Gorshkova 1 , V.A. Zimoglyad 2 , Yu.I. Tishin 2 . 1.  Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia . 2.   “Unique IC`s”, LLC, Moscow, Russia
16.10	O1-28	SILAR Preparation of Charge Selective Contacts for Future Photovoltaics. S. Gavrilov 1 , A. Zheleznyakova 1 , Th. Dittrich 2 , E. Poltoratsky 3 , A. Belogorokhov 4 1. Moscow Institute of Electronic Technology, Moscow , Russia , 2. Hahn-Meitner Institut , Berlin , Germany , 3. State Research Institute of Physical Problems, Moscow , Russia , 4. Institute of Rare Metals, Moscow , Russia
16.30 – 17.00	Coffee break. Winter garden
Conference Hall Session 7. Devices and ICs Session Chairman: Andrey Vasiliev, FSU Enterprise “Pulsar”, Russia
17.00	O1-29	Physical Limitations of Reliability of Solid-State Microwave Elements at Micro- and Nanoelectronics. A. Vasiliev, V. Sinkevitch. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
17.20	O1-30	Sign magnetosensitivity of dual-collector lateral bipolar magnetotransistor. R.D. T ikhonov. SMC “Technological Centre” MIEE, Moscow – Zelenograd , Russia
17.40	O1-31	High speed integrated switchboards based on connected quantum wells. B. Konoplev 1,2 , E. Ryndin 2 . 1. Taganrog Institute of Technology – Southern Federal University , Taganrog , Russia . 2. Southern Scientific Center of Russian Academy of Sciences , Rostov-on-Don , Russia
18.00	O1-32	Self-heating influence on device interconnect temperature in high-voltage SOI MOSFET. А . Krasukov, E. Artamonova. Moscow State Insitute of Electronic Engineering, Moscow , Russia
18.20	O1-33	Microwave GaN Transistors: Achievements and Prospects. A. Vasiliev, A. Dorofeev, Yu. Kolkovsky, V. Minnebaev. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
18.40	O1-34	Nanoionic supercapacitors for 0.5 V nanoelectronics. A.L. Despotuli, A.V. Andreeva, V.V. Aristov. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
Auditorium A Session 8. Thin Films Session Chairman: Mikhail Baklanov, IMEC, Leuven , Belgium
17.00	O1-35	Electric Pulse Induced Resistance Change in Oxide Thin Film Heterostructures. A. Ignatiev, N.J. Wu , X. Chen, C. Papagianni, Y. B. Nian, J. Strozier. Texas Center for Advanced Materials, University of Houston , Houston , USA
17.20	O1-36	MBE growth of Ge-Si strained structures with the step buffer for two-dimensional electron gas. L.V. Sokolov, Yu.B. Bolkhovitianov, and A.S. Derjabin. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia
17.40	O1-37	Development of MBE technology of III-V semiconductor heterostructures for ultra-high frequency devices. K. Zhuravlev, A. Toropov, V. Mansurov. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
18.00	O1-38	Surprising phase transformation of a-Si:H films under femtosecond laser impact. V.A. Volodin 1,2 , M.D. Efremov 1 , G.A. Kachurin 1 , S.A.  Kochubei 1 , A.G. Cherkov 1 , M. Deutschmann 3 , N. Baersch 3 . 1 .  Institute of Semiconductor P hysics SB RAS , Novosibirsk , Russi a . 2 .  Novosibirsk State University , Novosibirsk , Russia . 3. Laser Zentrum Hannover, Hannover, Germany
18.20	O1-39	Deposition of ultrathin magnetic films by magnetron sputtering with RF bias on substrate. V.V. Naumov, V.F. Bochkarev, Ed.Yu. Buchin. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
18.40	O1-40	Emitting prop er ties of cobalt thin films reduced from oxide by proton irradiation. B. Gurovich, K. Prikhodko , A. Domantovsky, K. Maslakov. Russian Research Center “Kurchatov Institute”, Moscow , Russia
Auditorium B Session 9. Superconducting Structures Session Chairman: Mikhail Kupriyanov, Institute of Nuclear Physics , Moscow State University , Russia
17.00	O1-41	Josephson effect in laterally inhomogeneous structures with ferromagnetic materials. T. Karminskaya 1 , M. Kupriyanov 1 , N.Pugach 2 . Institute of Nuclear Physics , Moscow State University , Moscow , Russia . 2. Physics Department of Moscow State University , Moscow , Russia
17.20	O1-42	Ferromagnetic nanodots as source of magnetic field: control transport properties of Josephson junctions and diluted magnetic semiconductor. S.N. Vdovichev. Institute for Physics of Microstructures, RAS, Nizhniy Novgorod , Russia
17.40	O1-43	High Linearity Josephson Array Structures. V.K. Kornev 1 , I.I. Soloviev 1 , N.V. Klenov 1 , and O. A. Mukhanov 2 . 1. Department of Physics, M.V.   Moscow State University , Moscow , Russia . 2. HYPRES, Inc., Elmsford , NY , USA
18.00	O1-44	Full synchronization of arrays of high-Tc Josephson junctions. A.M. Klushin 1,2 , M. He 1,3 , M.Yu. Levitchev 2 , V.A. Markelov 2 , V.V. Kurin 2 and N. Klein 1 . 1. Institute for Bio- and Nanosystems and CNI-Centre of Nanoelectronic Systems for Information Technology Forschungszentrum Julich GmbH, Julich , Germany . 2. Institure for physics of microstructures, RAS, Nizhny Novgorod, Russia . 3 Dept. of Electronics, Nankai Univ. , Tianjin , P. R. China
18.20	O1-45	Fluctuations of the thin diffusive metal film under the influence of microwave radiation. I. Devyatov, M. Kupriyanov, D. Goncharov. Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow , Russia
18.40	O1-46	Out-of-plane tilted Josephson junctions of bi-epitaxial YBa 2 Cu 3 O x thin films. J.E. Mozhaeva 1 , P.B. Mozhaev 1 , J. Bindslev Hansen 2 , C.S. Jacobsen 2 , I.K. Bdikin 3 , I.M. Kotelyanskii 4 , V.A. Luzanov 4 , S.G. Zybtsev 4 . 1.   Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia . 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark . 3.  CICECO, University of Aveiro , Aveiro , Portugal . 4.  Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia
19.00	Dinner
Wednesday, October 3rd 2007
8.15	Breakfast
8.50	Welcome remarks K.A. Valiev. Institute of Physics and Technology, Russian Academy of Sciences.
Conference Hall Plenary Session of SYMPOSIUM QI-2007 Chairman: Y. Ozhigov
9.00	Q-01	Coulomb blockade of anyons in quantum antidots. D.V.Averin. Department of Physics and Astronomy, Stony Brook University, SUNY, Stony Brook, NY, USA
9.30	Q-02	Reversible logic circuits as prototypes of prospective quantum computers, V. Semenov, J. Ren and D. Averin, Stony Brook University, Department of Physics and Astronomy, Stony Brook, NY
10.00	Q-03	Single-qubit operations in the double-donor structure driven by optical and voltage pulses . A. V. Tsukanov . Institute of Physics and Technology, Russian Academy of Sciences
10.30	Coffee break
Conference Hall Session 10. Nanodevices and Nanostructures II Session Chairman: Alex Ignatiev, Texas Center for Advanced Materials, University of Houston , USA
10.50	L2-01	INVITED: New Trends in Development of Modern Silicon Nanoelectronics. I.G. Neizvestny. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
11.10	O2-01	SiGe heterostructures on insulator for CMOS transistors formed by interface mediated endotaxy. V.P. Popov 1 , I.E. Tyschenko 1 , A.G. Cherkov 1 , A.E. Klimov 1 , M. Volskow 2 . 1.  Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 2 .  Institute of Ion Beam Physics and Material Research, Dresden , Germany
11.30	O2-02	Interacting resonances and electron density redistribution in resonant- tunneling heterostructures. A. A. Gorbatsevich 1 , V. V. Kapaev 2 , M. N. Zhuravlev 1 . 1. Moscow State Institute of Electronic Technology ( Technical University ), Moscow , Russia . 2. P.N. Lebedev Physical Institute, Moscow , Russia
11.50	O2-03	Memory Effect in Dielectrics with Inc orporated Nanosize Clusters. A.E. Berdnikov, A.A. Popov, A.A. Mironenko, V.D. Chernomordick. Institute of Physics &Technology RAS, Yaroslavl Branch , Russia
12.10	O2-04	Work function engineering of Ni-Si metal gates on HfO 2 high-? gate dielectrics as probed with in-situ XPS. A.V. Zenkevich, Yu.Yu. Lebedinskii, Yu.A. Matveev and V.N. Nevolin. Moscow Engineering Physics Institute (state university), Russia
12.30	O2-05	Using heterostructures for nanoscaled electronic devices in Novosibirsk Institute of Semiconductor Physics. V.P. Popov, I.E. Tyschenko, A.V. Latyshev, V.A. Gaisler, I.G. Neizvestny, A.L. Aseev. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
Auditorium A SYMPOSIUM QI-2007 Chairman: A. Tsukanov
11.00	Q-04	Non-demolishing measurements of an electron spin state via Fano resonance . L. Gorelik 1 , V. Vyurkov 2 , and A. Orlikovsky 2 1. Chalmers University of Technology and Goteborg University, Goteborg, Sweden, 2. Institute of Physics and Technology, RAS, Moscow, Russia
11.20	Q-05	Relative coordinates of coherent electron pair. C. Usenko 1 , N. Cherkashyna 1 . National Taras Shevchenko University of Kyiv, Kyiv, Ukraine
11.40	Q-06	The Software for Quantum Mechanical Calculation of Electronic Structure of Molecules. A.G. Gasanov 1 , F.G. Pashaev 1 . 1. Baku State University, Baku, Azerbaijan
12.00	Q-07	Josephson-junction qubits . N.V. Klenov, V.K. Kornev, N. G. Pugach, T.S. Rumyantseva. Department of Physics, Moscow State University, Moscow, Russia
12.20	Q-08	Simulation of Quantum Algorithms with high-level language. Mathematica. P.Nyman . International Center for mathematical Modeling in physics, Engineering and Cognitive science, MSI, Vaxjo University, Sweden
12.40	Q-09	Geometric information in eight dimensions vs. quantum information. V.I. Tarkhanov 1 , M.M. Nesterov 2 . 1. St. Petersburg State Polytechnic University, St. Petersburg, Russia. 2. St. Petersburg Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia
Auditorium B Session 11. Magnetic Micro- and Nanostructures Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS, Russia
11.00	O2-06	Non-equilibrium magnetism of nanoparticles revealed in ‘static’ and radiofrequency measurements. M.A. Chuev, N.P. Aksenova, P.G.   Medvedev. Institute of Physics and Technology, RAS, Moscow , Russia
11.20	O2-07	Peculiarities of the extraordinary Hall effect for planar arrays Fe nanoparticles embedded in an ultrathin Pt film. V.T. Volkov, V. I. Levashov, V. N. Matveev and V. A. Berezin. Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia
11.40	O2-08	Inhomogeneously magnetization of magnonic ferrite film measurement using magnetooptical Kerr effect. A. Klimov, S. Nikitov. Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia
12.00	O2-09	Finite size effects in antiferromagnetic multilayers. V.V. Kostyuchenko 1 , M.V. Kostyuchenko 2 . 1.  Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia 2.  Yaroslavl State Technical University , Yaroslavl , Russia
12.20	O2-10	Magnetoresistance of ferromagnetic nanoconstrictions in planar configuration. A.A. Bukharaev 1,2 , R.G. Gatiyatov 1 , P.A. Borodin 1 . 1.  Zavoisky Physical Technical Institute, Russian Academy of Sciences , Kazan , Russia . 2.  Kazan State University , Kazan , Russia
12.40	O2-11	Spin-flop effect in antiferromagnets induced by the spin-polarised current. H. Gomonay, V. Loktev. National Technical University “KPI”, Kyiv, Ukraine
13.00	Lunch
Conference Hall Session 12. Plasma Physics and Technologies I Session Chairman: Dorel Toma, Tokyo Electron  U.S. Holding
14.00	L2-02	INVITED: Dual (multi-) frequency capacitive coupled plasma (DF CCP) as an effective tool for nanotechnology. A.T. Rakhimov. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University (SINP MSU), Moscow , Russia
14.30	O2-12	A plasma etch process for bulk finFET manufacturing. D. Shamiryan, A. Redolfi, W. Boullart. IMEC, Leuven , Belgium
14.50	O2-13	Nanoscale etching processes. A. Rubin, C. Welch. Oxford Instruments Plasma Technology, Bristol , UK
15.10	O2-14	Plasma parameters and active particles kinetics in Cl 2 and HCl dc glow discharges. A. Efremov , V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo , Russia
15.30	O2-15	Theoretical study of ionization processes in BF 3 plasmas. V.P. Kudrya. Institute of Physics and Technology, RAS, Moscow , Russia
15.50	O2-16	Investigation of plasma uniformity in processing chambers of plasma tools for microelectronics by computer-aided tomography. K. Rudenko , A. Fadeev, S. Averkin, M. Rudenko, I.  Tyurin, A. Rylov, and A. Orlikovsky. Institute of Physics and Technology, RAS, Moscow , Russia
Auditorium A SYMPOSIUM QI-2007 Chairman: Y.Bogdanov
14.00	Q-10	Diffusion approximation of quantum dynamics. Y.I. Ozhigov . Moscow State University, Moscow, Russia
14.30	Q-11	Numerical computations of molecular stationary states. B.K. Novosadov . Moscow State University
14.50	Q-12	What Fundamentally New Properties Are Introduced by Special Relativity to Quantum Cryptography , D.Pomozov, S.Molotkov , Institute of physics and technology RAS
15.10	Q-13	EPR – experiments: analysis of Bell inequalities violation A. Kraklauer, New York, USA
15.30	Q-14	An investigation of the antiferromagnet-based NMR quantum register in inhomogeneous magnetic field , A. Kokin. Institute of Physics and Technology, RAS
15.50	Q-15	Will be announced later
Auditorium B Session 13. Simulation and Modeling II Session Chairman: Tariel Makhviladze, Institute of Physics &Technology RAS, Russia
14.00	O2-17	Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths . A. Burenkov, C. Kampen, J. Lorenz, and H. Ryssel. Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen , Germany
14.20	O2-18	All-quantum simulation of an ultra-small SOI MOSFET. V. Vyurkov 1 , I.  Semenikhin 1 , V. Lukichev 1 , A. Burenkov 2 , and A. Orlikovsky 1 . 1.  Institute of Physics and Technology, RAS, Moscow , Russia . 2.  Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen , Germany
14.40	O2-19	Modeling of non-stationary electron transport in semiconductor nanowires and carbon nanotubes. D.V. Pozdnyakov, A.V. Borzdov, V.M. Borzdov, F.F. Komarov. Belarus State University , Minsk , Belarus
15.00	O2-20	Simulation of metal and semiconductor single-electron 1D and 2D arrays. I.I. Abramov, A.L. Baranoff, A.M. Lavrinovich. Belarusian State University of Informatics and Radioelectronics, Minsk , Belarus
15.20	O2-21	Mathematical modeling of a GaAs integrated microwave limiter. G.Z. Garber. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
15.40	O2-22	A Comparison of Fitness Function Schedules for Multi-Objective Univariate Marginal Distribution Optimization of Mixed Analog-Digital Signal Circuits. L. Zinchenko , M. Radecker , F. Bisogno. Fraunhofer IAIS, Sankt Augustin, Germany
16.10	Coffee break
16.30 Entresol POSTER SESSION I
Bottom hall. Exhibition
19.00	Dinner
Thursday, October 4th 2007
8.15	Breakfast
Conference Hall Session 14. Nanostructures Technologies I Session Chairman: Anatoly Dvurechenskii, Institute of Semiconductor Physics SB RAS, Russia
9.00	L3-01	INVITED: Silicon based quantum dot nanostructures: Physics and Technology. A.V. Dvurechenskii. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia
9.30	O3-01	Method of creation of monomolecular transistor with “overhanging” electrodes. I.V. Sapkov, E.S. Soldatov. Department of Physics, M.V. Lomonosov Moscow State University , Russia
9.50	O3-02	Nanocrystal floating gate produced by CVD and thermal processing. A.G. Novikau 1 , P.I. Gaiduk 1 , E.N. Pshenichnij 2 , O.Yu. Nalivajko 2 , V.S. Malishev 2 and V.I. Plebanovich 2 . 1 .  Belarusian State University , Minsk , Belarus , 2 .  RPC Integral, Minsk , Belarus
10.10	O3-03	The electroformed open sandwich-structures as elements for crossbar-nanoelectronics. V. Mordvintsev, S. Kudryavtsev V. Levin . Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia
10.30	O3-04	Nanotechnology for fabricating full-epitaxial Nb-MgO-Nb tunnel junctions of sub-micron sizes. A. Chernych, G. Mikhailov, V. Vinnichenko. Institute of Microelectronics Technology & High Purity Materials, Russian Academy of Sciences , Chernogolovka, Moscow Region , Russia
Auditorium A SYMPOSIUM QI-2007 Chairman: B. Novosadov
9.00	Q-16	Quantum computation and hidden variables. V.V. Aristov and A.V. Nikulov, Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
9.20	Q-17	Generation of entangled states in quasi-periodical ferroelectrics, S. Kulik. Moscow State University, Moscow, Russia
9.40	Q-18	Limitations on ion trap quantum computing scheme . A. Burkov. Moscow State University, Moscow, Russia
10.00	Q-19	Has it been proved that a superconducting loop could be flux qubit? A.A. Burlakov, V.L. Gurtovoi, A.V. Nikulov and V.A. Tulin. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
10.20	Q-20	Thermal entanglement in a case of two spin temperatures , M. Kutcherov Polytechnic Institute of Siberian Federal University
10.40	Q-21	Will be announced later
Auditorium B Session 15. Simulation and Modeling III Session Chairman: Igor Abramov, Belarusian State University of Informatics and Radioelectronics , Belarus
9.00	L3-02	INVITED: Focused ion beam source of a new type for micro- and nanoelectronics technologies. V.L. Varentsov. V.G.Khlopin Radium Institute, St. Petersburg , Russia
9.30	O3-05	New Approach in the Development of Low Noise Microwave Semiconductor Devices. N.V. Alkeev 1 , S.V. Averin 1 , V.E. Lyubchenko 1 , A.A. Dorofeev 2 . 1.  Institute of Radioengineering & Electronics, RAS , Fryazino, Moscow region, Russia . 2.  Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
9.50	O3-06	Two-band models of wave function formalism f о r resonant tunneling diodes. I.I. Abramov, I.A. Goncharenko, N.V. Kolomejtseva, A.A. Shilov. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
10.10	O3-07	The prediction of nanostructure properties on the base of porous silicon. D. Bilenko, O. Belobrovaya, E. Jarkova, E. Khasina, I. Mysenko, D. Terin. Saratov State University , Saratov , Russia
10.30	O3-08	Simulation of feature profile evolution during the cyclic etching/ passivation process of deep plasma Si etching by the cell-string hybrid method. A.S. Shumilov, I.I. Amirov. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
11.00	Coffee break
Conference Hall Session 16. Nanostructures Technologies II Session Chairman: Vitalii Aristov, Institute of Microelectronics Technology RAS, Russia
11.30	O3-09	Influence of growth temperature and double-side doping on structural and electro-physical characteristics of the Al x Ga 1-x As/In y Ga 1-x As/GaAs nanosystem. I.A. Subbotin * , G.B. Galiev ** , R.M. Imamov * , M.A. Chuev *** . * Shubnikov Institute of Crystallography, RAS, Moscow , Russia . ** Institute of Ultra-High-Frequency Semiconductor Electronics, RAS, Moscow , Russia . *** Institute of Physics and Technology, RAS, Moscow , Russia
11.50	O3-10	Model of diffusion limited aggregation for the effect of magnetic field on ion beam synthesis. G.G. Gumarov, V. Yu. Petukhov. Kazan Physical Technical Institute of Kazan Scientific Center, RAS, Kazan , Russia
12.10	O3-11	Heterogeneous melting and participation of it in different micro- and nanotechnology processes. A.A. Buzdugan, S.A. Gavrilov, D.G. Gromov, E.N. Redichev, I.S. Chulkov. Moscow Institute of Electronic Technology, Zelenograd , Russia
12.30	O3-12	Porous silicon the material for nano- and microstructurizations. V. Starkov. Institute of Microelectronics Tecnology, RAS, Chernogolovka , Russia
12.50	O3-13	The approach to formation of interconnections with the low dimension for damascene technology. D.G. Gromov a , E.N .Redichev a , A.A. Golishnikov b , A.A. Buzdugan a , I.S. Chulkov a , R.M. Ammosov c . a Moscow Institute of Electronic Technology ( Technical University ), Moscow , Zelenograd , Russia . b ”Technological Center” Research and Production Complex at MIET, Moscow , Zelenograd , Russia . c State Research Institute of Physical Problems, Moscow, Zelenograd, Russia
Auditorium A SYMPOSIUM QI-2007 Chairman: A. Burkov
11.30	Q-22	Explicit Attack on the Key in Quantum Cryptography) Reaching the Theoretical Error Limit 11%, A.Timofeev, S.Molotkov, Moscow State University
11.50	Q-23	Hidden variables in Bell model and dynamical chaos, Y.Bogdanov , Institute of physics and technology, Moscow, Russia
12.10	Q-24	New Time-Phase Coding Method in Quantum Cryptography , A.Makkaveev, S.P.Kulik , S.Molotkov , Institute of physics and technology
12.30	Q-25	3D-vortex labyrinth trapping in the near field of a solid-state microchip laser. A.Yu. Okulov . P.N.Lebedev Physical Institute of Russian Academy of Sciences Leninsky prospect 53, 119991 Moscow, Russia
12.50	Q-26	Hidden time hypothesis and “no – protocol theorem”. P.V. Kurakin. Moscow Institute of Physics and Technology, Moscow, Russia
Auditorium B Session 17. Micro- and Nanostructures Characterization I Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS, Russia
11.30	O3-14	Nanorelief elements in reference measures for scanning electron microscopy. S.A.  Darznek 1 , M.N. Filippov 2 , V.B. Mityukhlyaev 1 , Yu.A. Novikov 3 , Yu.V. Ozerin 4 , A.V. Rakov 3 , P.A. Todua 1 . 1. Center for Surface and Vacuum Research, Moscow , Russia . 2. N.S. Kurnakov General and Inorganic Chemistry Institute, RAS , Moscow , Russia . 3. A.M. Prokhorov General Physics Institute, RAS , Moscow , Russia . 4. Mikron Corporation, Moscow , Russia
11.50	O3-15	Direct measurement of the linewidth of relief element on AFM in nanometer range. S.A. Darznek 1 , M.N. Filippov 2 , I.D. Lysov 1 , Yu.A. Novikov 3 , A.V. Rakov 3 , V.A. Sharonov 1 , P.A. Todua 1 . 1. Center for Surface and Vacuum Research, Moscow , Russia . 2. N.S. Kurnakov General and Inorganic Chemistry Institute, RAS , Moscow , Russia . 3. A.M. Prokhorov General Physics Institute, RAS , Moscow , Russia
12.10	O3-16	Generalized dynamical theory of X-rays diffraction by curved perfect crystals. T. Chen. Moscow State Academy of Fine Chemical Technology, Moscow , Russia
12.30	O3-17	The special features of Al x Ga 1-x N \ GaN heterostructures. K.L. Enisherlova 1 , R.M. Imamov 2 , I.A. Subbotin 2 , T.F. Rusak 1 , E.M. Temper 1 . 1. Federal state unitary enterprise «Science &Production enterprise «Pulsar», Moscow , Russia 2.  Institute of Crystallography RAS, Moscow , Russia
12.50	O3-18	Characterization of Nanometer Structures for CMOS VLSIC Design Flow. D.Y. Adamov, Y.F. Adamov. LCC “Unique IC`s”, Moscow Russia
13.10	O3-19	Fundamental and applied aspects of flicker-noise spectroscopy. M. Makoviychuk. Institute of Physics and Technology of the RAS, Yaroslavl Branch, Yaroslavl , Russia
13.30	Lunch
Conference Hall Session 18. Plasma Physics and Technologies II Session Chairman: Dorel Toma, Tokyo Electron  U.S. Holding
14.20	L3-03	INVITED: Plasma etching of high aspect ratio structures: from complex chemistry to Bosh processing. V. Lukichev 1 , V. Yunkin 2 . 1.  Institute of Physics and Technology, RAS, Moscow , Russia . 2.  Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia
14.50	O3-20	Plasma Si etching processes for microsystem technology. I.I. Amirov1, O.V. Morozov1, M.O. Izuimov1, B.A. Kalnov2, A.A. Orlikovsky2, K.A. Valiev2. 1. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia
15.10	O3-21	Dry processes for formation of suspended Si bulk structures. O. V. Morozov 1 , A.V. Postnikov 1 , I.I. Amirov 1 , V.A. Kalnov 2 . 1.  Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia . 2.Institute of Physics and Technology RAS, Moscow , Russia .
15.30	O3-22	Reactive sputtering of metal targets: influence of reactive atoms implantation. V.A. Marchenko. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
15.50	O3-23	Investigation of impurity composition of atomic hydrogen beam formed by a low-pressure arc-discharge source. V.A. Kagadei , D.I. Proskurovski, and S.V. Romanenko. High Current Electronics Institute, SB RAS, Tomsk , Russia
16.10	O3-24	Langmuir-Probe applications in monitoring of plasma etching. A.V. Miakonkikh , K.V. Rudenko and A.A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
Auditorium A SYMPOSIUM QI-2007
14.20	Q-27	Problem of detection of Rydberg atoms and quantum information processing, I.Riabtsev, D.Tretiakov, I.Beterov, V.Entin, Institute semiconductor physics, Siberian Dep.RAS
14.40	Q-28	Quantum registers on the basis of inhomogeneous chains of nuclear spins, E. B. Fel’dman, Institute of Problems of Chemical Physics of RAS
15.00	Q-29	Thermal pairwise entanglement in an inhomogeneous magnetic field , E. B. Fel’dman, A. N. Pyrkov, Institute of Problems of Chemical Physics of RAS, 142432, Chernogolovka, Moscow
15.20	Q-30	Single molecule implantation as alternative of single atom (ion) implantation for Quantum Computer development , V. Zhukov, V. Maslov, Inst. of informatics nd automation, RAS
15.40	Q-31	Prequantum model with classical fields as hidden variables. A. Khrennikov. Univ. Vaxjo, Sweden
16.00	Q-32	Fair Sampling and Rotational Invariance in EPR experiments, G. Adenier, A. Khrennikov, Vaxjo University
16.20	Q-33	Will be announced later
Auditorium B Session 19. Micro- and Nanostructures Characterization II Session Chairman: Akira Toriumi, University of Tokyo , Japan
14.20	O3-25	Photolumenescence from the nanosized Si fabricated by modified PVD process. A.F. Alexandrov 1 , S-K. Koh 2 , E.A. Kralkina 1 , J.H. Lee 2 , N.E. Maslova 1 , V.B. Pavlov 1 , V.P. Savinov 1 , V.Yu. Timoshenko 1 , K.V. Vavilin 1 . 1. Physical faculty of M.V. Lomonosov Moscow State University, Moscow Russia . 2. P&I Corporation, Seoul , S.Korea
14.40	O3-26	Luminescence of the intrinsic and extrinsic defects in hafnia films . A.A   Rastorguev 1 , V.I.   Belyi 1 , T.P.   Smirnova, L.V.   Yakovkina 1 , V.A.   Gritsenko 2 , M.V.   Zamorynskaya 3 , H.   Wong 4 . 1. Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk , Russia . 2.  Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 3. Ioffe Physicotechnical Institute, RAS, St. Petersburg , Russia . 4.   Electronic Engineering Department, City University of Hong Kong
15.00	O3-27	Chemical Vapor Deposition and characterization of HfO 2 /Si composition. T.P. Smirnova 1 , F.A. Kuznetsov 1 , V.V. Kaichev 2 , S.A.  Beloshapkin 3 , V.I. Kosyakov 1 , L.V. Yakovkina 1 , M.S. Lebedev 1 . 1. Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk , Russia . 2. Boreskov Institute of Catalysis, SB RAS, Novosibirsk , Russia . 3 . Materials and Surface Science Institute, Limerick , Ireland
15.20	O3-28	Falling down capacitance impedance under light illumination of MDS-structures with three-layer SiN x dielectrics. S.A.   Arzhannikova 1, a , M.D.   Efremov 1,b , A.A.   Voschenkov 1 , V.A.   Volodin 1 , G.N.   Kamaev 1 , D.V.   Marin 1 , V.S.   Shevchuk 1 S.A.   Kochubei 1 , A.A.   Popov 2 , Yu.A.   Minakov 2 . 1.  Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia 2.  Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
15.40	O3-29	Al x GaN\GaN structure diagnostic by C-V characteristics method. K.L. Enisherlova, I.B. Gulyaev, V.G. Goryachev, A.U. Dorofeev, E.M. Temper, N.B. Gladisheva. Federal state unitary enterprise «Science &Production enterprise «Pulsar», Moscow , Russia
16.00	O3-30	CVD Diamond with Electron Conductivity. The New Data on f.c.c. Carbon. M . B .  Guseva , V . G .  Babaev , V . V .  Khvostov , I . Yu .  Koniashin , Yu . A .   Korobov , N . D .  Novikov . Department of Physics, M.V.   Lomonosov Moscow State University , Moscow , Russia
16.20	Coffee break
16.30 Entresol. POSTER SESSION II
Bottom hall. Exhibition
19.30	Banquet
Friday, October 5th , 2007
9.00	Breakfast
10.00	Departure

ICMNE-2003

Фотографии с конференции ICMNE-2003
Version for print “CONFERENCE PROGRAM“
Version for print “POSTERS”

 

ICMNE 2003
CONFERENCE PROGRAM