Version from October 6, 2025
Please note that:
- Moscow time is used everywhere below
Monday, October 6, 2025 (short, long)
Tuesday, October 7, 2025 (short, long)
Wednesday, October 8, 2025 (short, long, poster session)
Thursday, October 9, 2025 (short, long, poster session)
Friday, October 10, 2025 (short, long)
SCHEDULE & LOCATIONS
Monday, October 6, 2025
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TIME (MSK) |
Conference area at Demidov University |
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14.00 – 18.00 |
Registration of participants. Address: 14, Sovetskaya street, Yaroslavl Адрес: Ярославль, ул. Советская, 14 |
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18.00 – 19.00 |
Participant’s meeting. Location will be announced at the registration desk |
Tuesday, October 7, 2025
8.45. Conference Hall. Welcome remarks
A.I. Rusakov, Senator of the Russian Federation, Federation COUNCIL of the Federal Assembly of the Russian Federation
A.A. Sokolov, Deputy Director for Microelectronics, NRC «Kurchatov Institute»
V.F. Lukichev, Head of the Valiev Division of Physics and Technology, NRC «Kurchatov Institute»
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TIME (MSK) |
CONFERENCE HALL |
AUDITORIUM A |
AUDITORIUM B |
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9.00 – 11.00 |
New Devices and Technologies |
————— |
————– |
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11.00 – 11.20 |
Coffee break |
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11.20 – 13.20 |
Quantum Informatics I |
Advanced IC’s Devices |
Advanced Lithography |
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13.20 – 14.20 |
Lunch time |
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14.20 – 16.00 |
THz and Microwave Devices |
Metamaterials for Optoelectronics and Sensorics |
Quantum Informatics II |
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16.00 – 16.20 |
Coffee break |
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16.20 – 18.00 |
Device Modeling and Simulation |
Materials for Optoelectronic Devices |
Quantum Informatics III |
Wednesday, October 8, 2025
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TIME (MSK) |
CONFERENCE HALL |
AUDITORIUM A |
AUDITORIUM B |
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9.00 – 11.00 |
Physics of Surfaces and Interfaces I |
Materials and Structures for Magnetic Memory |
Quantum Informatics IV |
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11.00 – 11.20 |
Coffee break |
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11.20 – 13.00 |
Physics of Surfaces and Interfaces II |
2D Materials Technologies |
Quantum Informatics V |
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13.00 – 14.00 |
Lunch time |
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14.00 – 15.40 |
Optoelectronic Structures and Devices I |
BEOL |
Quantum Informatics VI |
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15.40 – 16.00 |
Coffee break |
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16.00 – 17.40 |
Optoelectronic Structures and Devices II |
Ferroelectric Devices for Microelectronics |
Quantum Informatics VII |
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TIME (MSK) |
Conference area at Demidov University |
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17.40 – 18.40 |
Thursday, October 9, 2025
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TIME (MSK) |
CONFERENCE HALL |
AUDITORIUM A |
AUDITORIUM B |
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9.00 – 10.40 |
Metrology and Diagnostics for Materials and Structures I |
Resistive Switching and Memristor Effect I |
Sensors and MEMS I |
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10.40 – 11.00 |
Coffee break |
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11.00 – 12.40 |
Plasma Modeling and Plasma Microtechnologies I |
Resistive Switching and Memristor Effect II |
Sensors and MEMS II |
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13.00 – 14.00 |
Lunch time |
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14.00 – 17.20 |
Yaroslavl City Excursion/Round table “Quantum Technologies”/Thin film deposition technologies training |
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TIME (MSK) |
Conference area at Demidov University |
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17.40 – 18.40 |
19.00 Conference Dinner
Friday, October 10, 2025
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TIME (MSK) |
CONFERENCE HALL |
AUDITORIUM A |
AUDITORIUM B |
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9.00 – 10.20 |
Plasma Modeling and Plasma Microtechnologies II |
Resistive Switching and Memristor Effect III |
Sensors and MEMS III |
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10.40 – 11.00 |
Coffee break |
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11.00 – 12.00 |
Plasma Modeling and Plasma Microtechnologies III |
Metrology and Diagnostics for Materials and Structures II |
————— |
12.00. Conference Hall. Closing remarks
ICMNE-2025 SCIENTIFIC PROGRAM
Monday, October 6, 2025
14.00 – 18.00 Registration
18.00 – 19.00 Participant’s meeting
Tuesday, October 7, 2025
Conference Hall
8.45 WELCOME REMARKS
A.I. Rusakov, Senator of the Russian Federation, Federation COUNCIL of the Federal Assembly of the Russian Federation
A.A. Sokolov, Deputy Director for Microelectronics, NRC «Kurchatov Institute»
V.F. Lukichev, Head of the Valiev Division of Physics and Technology, NRC «Kurchatov Institute»
Plenary Session I. New Devices and Technologies
Session Chairman: Vladimir Lukichev, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
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9.00 |
L1-01 |
INVITED: 65 Years of Transistor Scaling: What about the Future? V. Sverdlov1, S. Selberherr2. 1. Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the Institute for Microelectronics, TU Wien, Vienna, Austria. 2. Institute for Microelectronics, TU Wien, Vienna, Austria. |
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9.30 |
L1-02 |
INVITED: X-ray lithography at a wavelength of 11.2 nm: state of the art and prospects. N.I. Chkhalo, W.W. Pauls. Institute for Physics of Microstructures of RAS, Nizhny Novgorod, Russia. |
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10.00 |
L1-03 |
INVITED: Materials and Process Challenges in Interconnect Scaling and RRAM Integration for Advanced Memory Architectures. D. Islamov1,2, P. Bobovnikov3, T. Perevalov1, M. Baklanov4. 1. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia. 2. Novosibirsk State University, Novosibirsk, Russia. 3. JSC NIIME, Zelenograd, Russia. 4. MIREA — Russian Technological University, Moscow, Russia. |
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10.30 |
L1-04 |
INVITED: UTBB SOI structures with local TR-HR ultra-high-resistance layers for radio-photonic integrated circuits. V.P. Popov1, V.E. Zhilitsky1, V.A. Antonov1, F.V. Tikhonenko1, L.N. Safronov1, A.V. Miakonkikh2, K.V. Rudenko2. 1. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia. 2. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
11.00 – 11.20 Coffee break
Plenary Session II. Quantum Informatics I
Session Chairman: Yuri Bogdanov, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
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11.20 |
qL1-01 |
INVITED: Three-photon laser excitation and three-body interactions of Rydberg atoms for quantum information. I.I. Ryabtsev1,2 (online), I.I. Beterov1,2, E.A. Yakshina1,2, D.B. Tretyakov1, V.M. Entin1, P.I. Betleni1,2, G. Suliman1,2, N.N. Bezuglov1,3, A. Cinins4, K. Miculis4,5, I.N. Ashkarin6, P. Cheinet6. 1. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia. 2. Novosibirsk State University, Novosibirsk, Russia. 3. Saint-Petersburg State University, Saint-Petersburg, Russia. 4. Institute of Atomic Physics and Spectroscopy, University of Latvia, Riga, Latvia. 5. National Research Nuclear University MEPhI, Moscow, Russia. 6. Laboratoire Aime Cotton, CNRS, Univ. Paris-Sud, ENS Paris-Saclay, Orsay, France. |
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11.50 |
qL1-02 |
Methods of optimization and time optimal control for quantum systems. A. Pechen1,2,3. 1. Department of Mathematical Methods for Quantum Technologies, Steklov Mathematical Institute of RAS, Moscow, Russia. 2. University of Science and Technology MISIS, Moscow, Russia. 3. Ivannikov Institute for System Programming of the RAS, Moscow, Russia. |
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12.20 |
qL1-03 |
International Year of Quantum Science and Technology: History and Prospects. N.A. Bogdanova1,2, Yu.I. Bogdanov1,2, V.F. Lukichev1. 1. National Research University «MIET», Moscow, Russia. 2. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
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12.50 |
qL1-04 |
Performance of qutrit QAOA algorithm with fixed parameters under noise. A.Yu. Chernyavskiy (online), B.I. Bantysh, Yu.I. Bogdanov. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
Session 1. Advanced IC’s Devices
Session Chairman: Konstantin Rudenko, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
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11.20 |
O1-01 |
Single Event Effects as fundamental limitation of digital electronics. G. Zebrev. National Research Nuclear University MEPHI, Moscow, Russia. |
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11.40 |
O1-02 |
Field-effect transistor with sharp source and drain Schottky Barrier contacts. I. Semenikhin1, D. Svintsov2, V. Vyurkov1,2, K. Rudenko1,2, V. Lukichev1,2. 1. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. |
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12.00 |
O1-03 |
Methodology for characterization the local mismatch of MOSFET parameters. D. Mayfet1 (online), S. Belostotskaya1, A. Rudenko1, A. Shemyakin1, V. Shevyakov2. 1. SMC «Technological Centre», Zelenograd, Russia. 2. National Research University of Electronic Technology, Zelenograd, Russia. |
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12.20 |
O1-04 |
Hückel-based compact non-local model for molecular electronics devices. N.M. Shubin1,2, M.N. Zhuravlev2, Yu.A. Uspenskii1, A.V. Emelianov1, A.A. Gorbatsevich1,2. 1. P.N. Lebedev Physical Institute of RAS, Moscow, Russia. 2. National Research University of Electronic Technology, Zelenograd, Russia. |
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12.40 |
O1-05 |
Single-electron devices based on impurity atoms in silicon with oxidized implanted layer. S. Pankratov1 (online), D. Kusakina1, A. Miakonkikh2, A. Rogozhin2, V. Krupenin1, A. Trifonov1, V. Shorokhov1, D. Presnov1. 1. Lomonosov Moscow State University, Moscow, Russia. 2. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
Session 2. Advanced Lithography
Session Chairman: Alexander Rogozhin, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
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11.20 |
O1-06 |
Predictive Compact Lithography Simulation with Stochastic Contrast. A.A. Sharapov1,2, E.S. Gornev1. 1. JSC “Molecular Electronics Research Institute”, Zelenograd, Russia. 2. Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Russia. |
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11.40 |
O1-07 |
Optimization of electrostatic-assisted ultrasonic spray coating of photoresist film. V.A. Petukhov, K.A. Tsarik, A.V. Lashkov. National Research University of Electronic Technology, Moscow, Russia. |
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12.00 |
O1-08 |
Investigation of the influence of the design of alignment marks and the used diffraction order on the amount of overlay in submicron photolithography in the formation of thick-film aluminum wiring of silicon semiconductor structures. Yu.A. Chaplygin1, D.Yu. Shelkunov1,2 (online), V.I. Shevyakov1. 1. National Research University of Electronic Technology, Zelenograd, Russia. 2. LLC «NM-Tech», Zelenograd, Russia. |
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12.20 |
O1-09 |
Comparison of PMMA Resist and Tin-Oxo Cluster TOC-21 as a Negative-Tone Resist for Electron Beam Lithography. K. Nikitin1, K. Tsarik1, M. Zakharina2. 1. National Research University «MIET», Moscow, Russia. 2. G.A. Razuvaev Institute of Organometallic Chemistry of RAS, Nizhny Novgorod, Russia. |
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12.40 |
O1-10 |
Nanosize radiation fluxes formation for X-ray scanning lithography. V. Egorov1, E. Egorov1,2. 1. Institute of Microelectronics Technology RAS, Chernogolovka, Russia. 2. Institute of Radioengineering and Electronics RAS, Fryazino, Russia. |
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13.00 |
O1-11 |
Application of colloidal lithography to create nanostructures. V.P. Kudrya. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
13.20 – 14.20 Lunch
Session 3. THz and Microwave Devices
Session Chairman: Konstantin Rudenko, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
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14.20 |
O1-12 |
Low threshold terahertz laser based on a metal groove with active graphene. M.Yu. Morozov, K.V. Mashinsky, V.V. Popov. Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), RAS, Saratov, Russia. |
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14.40 |
O1-13 |
Discrete 6-bit X-band Phase Shifter for Radar Systems. A. Kulish1,2 (online), V. Losev1. 1. MIET – Moscow Institute of Electronic Technologies, Zelenograd, Russia. 2. JSC «Microwave Systems», Moscow, Russia. |
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15.00 |
O1-14 |
Investigation of the ways to enhance characteristics of the superconducting parametric travelling wave amplifiers. V. Kornev1, A. Nikolaeva2, N. Kolotinskiy1. 1. Faculty of Physics, Lomonosov Moscow State University, Moscow, Russia. 2. Former affiliation: Lomonosov Moscow State University, Moscow, Russia. |
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15.20 |
O1-15 |
Parametric resonance and chaotic phase dynamics of a two-contact SQUID. D.P.Chernyshov, A.M.Satanin (online). National Research University “Higher School of Economics”, Moscow, Russia. |
Session 4. Metamaterials for Optoelectronics and Sensorics
Session Chairman: Vladimir Popov, Rzhanov Institute of Semiconductors Physics of SB RAS, Novosibirsk, Russia.
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14.20 |
O1-16 |
Prospective chiral metamaterials based on nanostructured thin films for photonics and biosensors. O.S. Trushin1, I.S. Fattakhov1, A.A. Popov1, L.A. Mazaletskiy1,2, A.S. Fedorov3,4, M.V. Logunov3,4. 1. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. 2. Demidov Yaroslavl State University, Yaroslavl, Russia. 3. Moscow Institute of Physics and Technology (NRC), Dolgoprudny, Russia. 4. Kotelnikov Institute of Radio Engineering and Electronics of RAS, Moscow, Russia. |
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14.40 |
O1-17 |
Study of formation of all-silicon based metasurface elements for sensor devices. V. Klimin1 (online), E. Gusev1, V. Polyakov1, L. Maslova1, S. Wang2, L. Jiang2, Z. Wang2, W. Zhang2,3, O. Ageev1,4. 1. Southern Federal University, Taganrog, Russia. 2. School of Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan, China. 3. Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, China. 4. Research and Education Center “Nanotechnologies” of Southern Federal University, Taganrog, Russia. |
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15.00 |
O1-18 |
A specific wave of electromagnetic energy accumulation in a random medium of small spherical particles with magnetic dipole Mie resonance. M.Yu. Barabanenkov1,2, A.G. Italyantsev1. 1. JSC Molecular Electronics Research Institute, Zelenograd, Russia. 2. Institute of Microelectronics Technology and High-Pure Materials, Chernogolovka, Russia. |
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15.20 |
O1-19 |
Photo- and X-ray conductivity of chromium-doped layered TlGaS2 crystals. S.M. Asadov1,2,3 (online), S.N. Mustafaeva4, V.F. Lukichev5. 1. Modeling Group, Scientific Research Institute of Geotechnological Problems of Oil, Gas and Chemistry, Baku, Azerbaijan. 2. Nagiyev Institute of Catalysis and Inorganic Chemistry, Baku, Azerbaijan. 3. Department of Industrial Machines, Azerbaijan State Oil and Industry University, Baku, Azerbaijan. 4. Institute of Physics, Baku, Azerbaijan. 5. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
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15.40 |
O1-20 |
Luminescence and Raman spectroscopy of polycrystalline diamond films with nitrogen-vacancy centers for converters of vacuum ultraviolet radiation. A.N. Demidova, E. Il’ichev, D.A. Korlyakov, G.N. Petruhin, A.V. Romashkin, G.S. Rychkov, N.V. Finogeev. National Research University of Electronic Technology, Moscow, Russia. |
Session 5. Quantum Informatics II
Session Chairman: Alexander Pechen, Steklov Mathematical Institute of RAS, Moscow, Russia.
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14.20 |
q1-01 |
Investigation of optical quantum states using probability amplitude generating functions. Yu.I. Bogdanov1,2, N.A. Bogdanova1,2, V.F. Lukichev1. 1. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia, 2. National Research University «MIET», Moscow, Russia. |
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14.40 |
q1-02 |
Trapping behavior in some quantum control landscapes. B. Volkov1,2, A. Myachkova1, I. Korolev1,2, A. Pechen1,2. 1. Department of Mathematical Methods for Quantum Technologies, Steklov Mathematical Institute of RAS, Moscow, Russia, 2. University of Science and Technology MISIS, Moscow, Russia. |
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15.00 |
q1-03 |
Simulation of solid-state structures with a single electron. I. Semenikhin1, L. Fedichkin1,2, V. Vyurkov1,2. 1. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia, 2. Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Russia. |
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15.20 |
q1-04 |
Quantum channels, complex Stiefel manifolds, and optimization. I. Russkikh1, B. Volkov1, A. Pechen1,2. 1. Steklov Mathematical Institute of RAS, Moscow, Russia, 2. Ivannikov Institute for System Programming of the RAS, Moscow, Russia. |
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15.40 |
q1-05 |
Polarization states rotation in satellite-Earth quantum and classical optical communications. A. Khmelev1,2,3,4, K. Barbyshev2,3, A. Duplinsky2,5, L. Pismeniuk2, A. Chernov1,2,3,4, E. Ivchenko1,2,3,4, V. Kurochkin1,2,3,4. 1. Russian Quantum Center, Moscow, Russia. 2. QSpace Technologies, Moscow, Russia. 3. National University of Science and Technology MISIS, Moscow, Russia. 4. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 5. HSE University, Moscow, Russia. |
16.00 – 16.20 Coffee break
Session 6. Device Modeling and Simulation
Session Chairman: Vladimir Vyurkov, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
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16.20 |
O1-21 |
Simulation of field-effect transistors based on bilayer graphene and resonant-tunneling heterostructures based on 2D-materials with vertical transport. I. Abramov, V. Labunov, N. Kalameitsava. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus. |
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16.40 |
O1-22 |
Simulation of a ballistic GAAFET based on AlxGa1–xAs quantum wire. D. Pozdnyakov, A. Borzdov (online), V. Borzdov. Belarusian State University, Minsk, Belarus. |
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17.00 |
O1-23 |
Modeling the effect of temperature conditions on the current-voltage characteristics of field-effect transistors on SiC. A. Krivenkov1, G. Zebrev2. 1. «Krasnoznamensk Semiconductor Factory «Arsenal», Krasnoznamensk, Russia. 2. National Research Nuclear University MEPHI, Moscow, Russia. |
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17.20 |
O1-24 |
Accounting for mobility reduction, body effect, and drift velocity saturation in the extrinsic MOSFET saturation current equation. V. Turin1, O. Pronina1, A. Rogov2, V. Shcheglov3, G. Zebrev4, S. Kokin5, S. Makarov5, B. Rahmatzoda6. 1. Orel State University named after I.S. Turgenev, Orel, Russia. 2. JSC “Proton“, Orel, Russia. 3. CJSC “Electrum AV”, Orel, Russia. 4. National Research Nuclear University “MEPHI“, Moscow, Russia. 5. Integrated Solutions LLC, Zelenograd, Russia. 6. Tajik National University, Dushanbe, Tajikistan. |
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17.40 |
O1-25 |
Model of accumulation of surface states in p-MOS transistors under negative bias. O. Aleksandrov, N. Morozov (online). Saint Petersburg Electrotechnical University “LETI”, St. Petersburg, Russia. |
Session 7. Materials for Optoelectronic Devices
Session Chairman: Oleg Trushin, Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia.
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16.40 |
O1-26 |
Optical properties of selenium-hyperdoped silicon for broad range IR photodetectors: effects of laser and thermal treatment. F. Komarov1 (online), N. Kovalchuk2, I. Parkhomenko3, O. Milchanin1, Y. Kharlovich1. 1. A.N. Sevchenko Institute of Applied Physical Problems of Belarusian State University, Minsk, Belarus. 2. OJSC Integral, Minsk, Belarus. 3. Belarusian State University, Minsk, Belarus. |
|
17.00 |
O1-27 |
Investigation of the Conduction Type of Non-Stoichiometric germanosilicate Glass Films. G.A. Hamoud1,2, G.N. Kamaev1, M. Vergnat3, V.A. Volodin1,2. 1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia. 2. Novosibirsk State University, Novosibirsk, Russia. 3. Université de Lorraine, Nancy, France. |
|
17.20 |
O1-28 |
Color change of the a-Si film on the surface of Al-4%Cu/Si(100) during its sputtering in argon plasma. I. Amirov, M. Izyumov. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. |
|
17.40 |
O1-29 |
Electromagnetic-induced currents in a triangular cluster of nanospheres. M.Yu. Barabanenkov1,2, A.A. Sapegin1, A.A. Krylov1. 1. JSC Molecular Electronics Research Institute, Zelenograd, Russia. 2. Institute of Microelectronics Technology and High-Pure Materials, Chernogolovka, Russia. |
Session 8. Quantum Informatics III
Session Chairman: Ilya Lazarev. Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry of RAS, Chernogolovka, Russia.
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16.20 |
q1-06 |
Connectivity-Aware Qubit Mapping and CNOT Cost Minimization for Quantum Hashing Circuits. I. Zinnatullin1 (online), K. Khadiev2. 1. Institute of Computational Mathematics and Information Technologies, Kazan Federal University; Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia, 2. Institute of Computational Mathematics and Information Technologies, Kazan Federal University; Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia. |
|
16.40 |
q1-07 |
Analysis of the waveguide-resonator-atom system parameters for quantum memory. L.A. Idrisova, N.M. Arslanov, S.A. Moiseev. Kazan National Research Technological University named after A. N. Tupolev – KAI, Kazan Quantum Center, Kazan, Russia. |
|
17.00 |
q1-08 |
Evaluation of the effectiveness of the Toeplitz hashing algorithm in processing noise signals with a limited frequency range. A. Kamalov1 (online), M. Sibgatullin1,2, N. Arslanov1. 1. Kazan National Research Technical University named after A.N. Tupolev — KAI, Kazan, Russia. 2. Academy of Sciences of the Republic of Tatarstan, Institute of Applied Research of the Academy of Sciences of the Republic of Tatarstan, Kazan, Russia. |
|
17.20 |
q1-09 |
Quantum random forest model prediction circuit gate complexity for linear nearest neighbor architecture. K. Khadiev1 (online), L. Safina2, I. Zinnatullin3. 1. Institute of Computational Mathematics and Information Technologies, Kazan Federal University; Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia, 2. Institute of Computational Mathematics and Information Technologies, Kazan Federal University; Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia, 3. Institute of Computational Mathematics and Information Technologies, Kazan Federal University; Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia. |
|
17.40 |
q1-10 |
Shallow circuit implementation for the phase form of quantum hashing and local-sensitive hashing on IBMQ noisy emulators. K. Khadiev1,2 (online), D. Melnikov1, K. Altinbayev1, A. Khadieva1,2. 1. Institute of Computational Mathematics and Information Technologies, Kazan Federal University. 2. Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia. |
Wednesday, October 8, 2025
Plenary Session III. Physics of Surfaces and Interfaces I
Session Chairman: Oleg Trushin, Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia.
|
9.00 |
L2-01 |
INVITED: 2D Rare-Earth Materials for Spintronics: Altermagnets, Ferromagnets and their Heterostructures. D.V. Averyanov1, I.S. Sokolov1, O.E. Parfenov1, A.N. Mihalyuk2, O.A. Kondratev1, A.N. Taldenkov1, A.M. Tokmachev1, V.G. Storchak1. 1. National Research Center “Kurchatov Institute”, Moscow, Russia. 2. Far Eastern Federal University, Vladivostok, Russia. |
|
9.30 |
L2-02 |
INVITED: Fabrication and application of multilayer ferromagnetic/heavy metal thin films in optoelectronic and spintronic devices. M.V. Dorokhin, P.B. Demina, A.V. Zdoroveishchev, M.V. Ved’, I.L. Kalentyeva, D.A. Zdoroveishchev, A.V. Kudrin, D.A. Tatarskiy, Yu.M. Kuznetsov. Lobachevsky State University of Nizhny Novgorod, Nizhniy Novgorod, Russia. |
|
10.00 |
L2-03 |
INVITED: Solid-state Electrochemistry in Microelectronics. A. Skundin1, T. Kulova1, A. Rudy2. 1. Frumkin Institute of Physical Chemistry and Electrochemistry, Moscow, Russia. 2. Laboratory of Physics and Electrochemistry of Solid-State Current Sources, Scientific Research Department, P.G. Demidov Yaroslavl State University, Yaroslavl, Russia. |
|
10.30 |
L2-04 |
Thermomigration of clusters on the surface of nanomaterials. E. Buchin. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. |
Session 9. Materials and Structures for Magnetic Memory
Session Chairman: Andrey Miakonkikh, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
|
9.00 |
O2-01 |
INVITED: Emerging Trends in Magnetoresistive Memories. V. Sverdlov1, N.P. Jørstad1, B. Pruckner1, M. Bendra2, W. Goes3, S. Selberherr2. 1. Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the Institute for Microelectronics, TU Wien, Vienna, Austria. 2. Institute for Microelectronics, TU Wien, Vienna, Austria. 3. Silvaco Europe Ltd., Cambridge, United Kingdom. |
|
9.30 |
O2-02 |
Evolution of the magnetic inhomogeneity in a ferromagnetic layer of a MRAM cell with pinned boundaries. N.V. Ostrovskaya (online), V.A. Skidanov. National Research Centre “Kurchatov Institute”, Moscow, Russia. |
|
9.50 |
O2-03 |
Micromagnetic modeling of hexagonal ensembles of high-aspect nanowires of ferromagnetic iron, nickel and cobalt. E.A. Grushevsky, N.G. Savinski, O.S. Trushin. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. |
|
10.10 |
O2-04 |
Current effects in anisotropic magnetoresistance of metamaterials from ferro- and antiferromagnetic metals. L. Fomin1,2, I. Malikov1, V. Berezin1. 1. Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Russia. 2. JSC NPO Almaz after A.A. Raspletin, Moscow, Russia. |
|
10.30 |
O2-05 |
Multilevel relaxation model for describing magnetization curves. A.V. Lobachev, M.A. Chuev. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
Session 10. Quantum Informatics IV
Session Chairman: Leonid Fedichkin, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
|
9.00 |
q2-01 |
Spherical Quantum Hashing. A. Vasiliev1,2 (online). 1. Kazan Federal University, Kazan, Russian Federation. 2. Kazan E.K. Zavoisky Physical-Technical Institute of the Kazan Scientific Center of the Russian Academy of Sciences, Kazan, Russia. |
|
9.20 |
q2-02 |
A neural network approach to estimating randomness in real time based on NIST tests. A.A. Garafutdinov1 (online), M.E. Sibgatullin1,2, N.M. Arslanov1. 1. Kazan National Research Technical University named after A. N. Tupolev – KAI, Kazan, Russia. 2. Institute of Applied Research of the Academy of Sciences of the Republic of Tatarstan, Kazan, Russia. |
|
9.40 |
q2-03 |
Comparison of efficiency of lexicographic ranking and discrete wavelet transform methods for random noise post-processing. D. Mavkov1, M. Sibgatullin1,2,3, L. Gilyazov1, N. Arslanov1. 1. Kazan National Research Technical University named after A.N. Tupolev-KAI, Kazan, Russia. 2. Tatarstan Academy of Sciences, Russia, 3. Kazan (Volga Region) Federal University, Kazan, Russia. |
|
10.00 |
q2-04 |
Quantum search in a dictionary based on fingerprinting function. F. Ablayev1, N. Salikhova2 (online). 1. Kazan Federal University, Kazan, Russia. 2. Kazan Federal University, Kazan, Russia. |
|
10.20 |
q2-05 |
Construction of a Quantum Circuit for Solving the Knapsack Problem in the Context of Searching Elements in an Unordered Table. K. Stepanenko1,2 (online). 1. Kazan (Volga Region) Federal University, Kazan, Russia. 2. Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia. |
11.00 – 11.20 Coffee break
Session 11. Physics of Surfaces and Interfaces II
Session Chairman: Vladimir Popov, Rzhanov Institute of Semiconductors Physics of SB RAS
|
11.20 |
O2-06 |
Investigation of Alterations in the Allotropic Structure of Plasma-Irradiated Graphite Surface. V. Afanaseyv¹, M. Semenov-Shefov¹ (online), L. Lobanova², P. Edelbekova³, L. Volkova3, L. Zhang2, S. Wang2, J. Chen2, H. Liu2. 1. Department of General Physics and Nuclear Fusion, National Research University “Moscow Power Engineering Institute”, Moscow, Russia. 2. Institute of Plasma Physics, Chinese Academy of Sciences, Hefei, China. 3. Institute of Nanotechnology of Microelectronics of RAS, Moscow, Russia. |
|
11.40 |
O2-07 |
Analysis of resistivity of thin Al films based on their density distribution profile. A. Lomov1 (online), M. Tarasov2, K. Sherbachev3, A. Tatarintsev1, A. Chekushkin2. 1. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. 2. Kotelnikov Institute of Radio Engineering and Electronics of RAS, Moscow, Russia. 3. NITU MISIS, Moscow, Russia. |
|
12.00 |
O2-08 |
Oxide antiferromagnetics as a barrier materials for Josephson junctions based on cuprate superconductor. Yu.V. Kislinskii1, K.Y. Constantinian1, I.E. Moskal1, A.M. Petrzhik1, V.A. Baydikova1,2, N.V. Dubitskiy1,3, K.E. Nagornyh1, G.D. Ulev1,3, A.V. Shadrin1,4, G.A. Ovsyannikov1. 1. Kotelnikov Institute of Radioengineering and Electronics, Moscow, Russia. 2. MIREA, Russian Technological University, Moscow, Russia. 3. Facility of Physics, National Research University “Higher School of Economics”, Moscow, Russia. 4. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. |
|
12.20 |
O2-09 |
Interface potential and topological bound states in a microscopic tight-binding model. A. Shyrokov1, A. Gorbatsevich1,2. 1. National Research University of Electronic Technology, Moscow, Russia. 2. LPI, P.N. Lebedev Physical Institute, Moscow, Russia. |
|
12.40 |
O2-10 |
Integrated planar battery with composite electrodes. M.A. Evstafyev1, A.I. Novoseltsev1, I.S. Marinkin1, R.M. Ryazanov2, I.M. Gavrilin1, E.A. Lebedev1, V.A. Krivchenko3. 1. National Research University of Electronic Technology, Zelenograd, Russia. 2. Scientific-Manufacturing Complex “Technological Center”, Zelenograd, Russia. 3. Dubna State University, Dubna, Russia. |
Session 12. 2D-Materials Technologies
Session Chairman: Oleg Trushin, Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia.
|
11.20 |
O2-11 |
Femtoseconds laser lithography as a perspective tool for processing of 1D and 2D materials. I. Bobrinetskiy. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. |
|
11.40 |
O2-12 |
Reproducibility and quality of magnetron deposition processes for MoS2 thin films. A.I. Belikov, M.A. Sharapkov, N.M. Sinyavin. BMSTU, Moscow, Russia. |
|
12.00 |
O2-13 |
Vertically oriented MoS2: synthesis, morphology, and optical properties. P.G. Uymina¹, A.B. Speshilova², M.A. Anikina1,3, A.D. Bolshakov1,3,4,5. 1. Moscow Institute of Physics and Technology, Moscow, Russia. 2. Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia. 3. Alferov St. Petersburg Academic University, RAS, St. Petersburg, Russia. 4. Yerevan State University, Yerevan, Republic of Armenia. 5. St. Petersburg State University, St. Petersburg, Russia. |
|
12.20 |
O2-14 |
Charge transfer and frequency dispersion of dielectric coefficients of TlGa1xTmxS2. S.M. Asadov1,2,3 (online), S.N. Mustafaeva4, V.F. Lukichev5. 1. Modeling Group, Scientific Research Institute of Geotechnological Problems of Oil, Gas and Chemistry, Baku, Azerbaijan. 2. Nagiyev Institute of Catalysis and Inorganic Chemistry, Baku, Azerbaijan. 3. Department of Industrial Machines, Azerbaijan State Oil and Industry University, Baku, Azerbaijan. 4. Institute of Physics, Baku, Azerbaijan. 5. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
12.40 |
O2-15 |
Growth of AlGaN/GaN heterostructures using Ga-rich/N-rich growth modes on silicon substrates by the ammonia MBE. D. Tuzhilin, K. Tsarik. National Research University of Electronic Technology, Zelenograd, Russia. |
Session 13. Quantum Informatics V
Session Chairman: Boris Volkov, Steklov Mathematical Institute of RAS, Moscow, Russia.
|
11.20 |
q2-06 |
Comparison of benchmarking methods for two-qubit quantum operations. B.I. Bantysh (online), Yu.I. Bogdanov. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
11.40 |
q2-07 |
Development of methods to control the hardware components of quantum computers taking into account decoherence and quantum noise. I.K. Golyshev 1,2, I.A. Dmitriev 1,2, K.B. Koksharov 1,2, N.A. Bogdanova 1,2, Yu.I. Bogdanov 1,2. 1. National Research University «MIET», Moscow, Russia. 2. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
12.00 |
q2-08 |
Tomography of Optical Quantum States with Imperfect Photon-Number-Resolving Detectors. I.A. Dmitriev1,2, I.K. Golyshev1,2, N.A. Bogdanova1,2, Yu.I. Bogdanov1,2, V.F. Lukichev2. 1. National Research University «MIET», Moscow, Russia. 2. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
12.20 |
q2-09 |
Precision Reconstruction of Qudits Accounting for Readout Errors via the Confusion Matrix. K.B. Koksharov1,2, N.A. Bogdanova1,2, Yu.I. Bogdanov1,2, V.F. Lukichev2. 1. National Research University «MIET», Moscow,, Russia. 2. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
12.40 |
q2-10 |
Analysis of quantum computing resources in the implementation of the Quantum Fourier Transform and Grover algorithm on qudit systems. A.S. Chudakov1 (online), N.A. Borshchevskaya1, D.V. Fastovets2, A.Yu. Chernyavskiy2, B.I. Bantysh2, Yu.I. Bogdanov2. 1. Quantum Technology Centre and Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow, Russia, 2. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
13.00 – 14.00 Lunch
Session 14. Optoelectronic Structures and Devices I
Session Chairman: Vladimir Vyurkov, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
|
14.00 |
O2-16 |
INVITED: Smart optoelectronics with 2d materials. D. Svintsov1,2, V. Semkin1, M. Kashchenko1,2, K. Kapralov1,2, I. Domaratskii1,2, A. Shabanov1,2, I. Mazurenko1, O. Kononenko2,3, A. Bocharov1,2. 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 2. Joint Stock Company “Skanda Rus”, Krasnogorsk, Russia. 3. Institute for Problems of Microelectronics Technology and High-Purity Materials of RAS, Chernogolovka, Russia. |
|
14.30 |
O2-17 |
Epitaxially-integrated laser-thyristor heterostructures for high-power pulsed emitters. T.A. Bagaev1, A.I. Zhelnin1, M.A. Ladugin1, A.A. Marmalyuk1, Yu.V. Kurnyavko1, A.V. Lobintsov1, A.I. Danilov1, S.M. Sapozhnikov1, A.A. Morozyuk1, V.V. Krichevsky1, V.P. Konyaev1, V.A. Simakov1, S.O. Slipchenko2, A.A. Podoskin2, N.A. Pikhtin2. 1. POLYUS Research Institute of M.F. Stelmakh, Moscow, Russia. 2. Ioffe Institute of RAS, St. Petersburg, Russia. |
|
14.50 |
O2-18 |
Numerical calculation of electro-optical characteristics of quantum-dimensional heterostructures for the optical modulators creation. S.V. Khazanova, A.I. Bobrov, A.S. Panfilov, A.P. Gorshkov, A.V. Nezhdanov1. Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia. |
|
15.10 |
O2-19 |
Full Stokes State Resolution via Single Photodetector with Geometrically Patternized Contacts. A. Shabanov (online), V. Semkin, D. Svintsov, M. Kaschenko, I. Domaratsky, I. Mazurenko, V. Myltsev. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. |
|
15.30 |
O2-20 |
Development methodology conversion of microwave signals into the optical range. A.S. Timoshenkov (online), Yu.I. Stern, V.S. Soloviev. National Research University “MIET”, Zelenograd, Russia. |
Session 15. BEOL
Session Chairman: Konstantin Rudenko, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
|
14.00 |
O2-21 |
INVITED: Porous and composite films for microelectronics: looking for new approaches. K. Vorotilov, A. Sigov. MIREA – Russian Technological University, Moscow, Russia. |
|
14.30 |
O2-22 |
BEOL-Compatible Devices for Monolithic 3D Integration in Future Electronic Systems. E. Zamburg (online). National University of Singapore, Singapore. |
|
14.50 |
O2-23 |
Ru-based interconnects for memristor crossbars. A. Rogozhin1,2, O. Glaz1,2, A. Reznyukov1,2, A. Melnikov1. 1. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. 2. NRU Moscow Power Engineering Institute, Moscow Russia. |
|
15.10 |
O2-24 |
Utilizing Porous Low-k Dielectrics for Self-Monitoring of Vacuum Chamber Contamination during UV Annealing. M. Gerelt-Od¹, A. Vishnevskiy¹, F. Konyakhin², D. Lopaev², K. Vorotilov¹, M. Baklanov1. 1. MIREA—Russian Technological University, Moscow, Russia. 2. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow, Russia. |
Session 16. Quantum Informatics VI
Session Chairman: Narkis Arslanov, Kazan National Research Technical University named after A.N. Tupolev – KAI, Kazan, Russia.
|
14.00 |
q2-11 |
Quantum entanglement in two-spin systems in multiple pulse NMR spin locking with dephasing relaxation. G.A. Bochkin (online), A.I. Zenchuk, E.I. Kuznetsova, A.V. Fedorova, E.B. Fel’dman. Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry RAS, Chernogolovka, Russia. |
|
14.20 |
q2-12 |
Arbitrary quantum state creation via controlled measurement. A.I. Zenchuk1 (online), W. Qi2, J. Wu3. 1. Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry RAS, Chernogolovka, Russia. 2. Institute of Quantum Computing and Computer Theory, School of Computer Science and Engineering, Sun Yat-sen University, Guangzhou, China. 3. School of Mathematical Sciences, Zhejiang University, Hangzhou, China. |
|
14.40 |
q2-13 |
Quantum coherence restoring in communication line via controlled interaction with environment. E.B. Fel’dman1, I.D. Lazarev1,2, A.N. Pechen3,4, A.I. Zenchuk1. 1. Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry RAS, Chernogolovka, Russia. 2. Faculty of Fundamental Physical-Chemical Engineering, Lomonosov Moscow State University, Moscow, Russia. 3. Department of Mathematical Methods for Quantum Technologies, Steklov Mathematical Institute of RAS, Moscow, Russia. 4. National University of Science and Technology MISIS, Moscow1, Russia. |
|
15.00 |
q2-14 |
Deterministic entanglement distribution over quantum network of BEC qubits. A.N. Pyrkov1 (online), I.D. Lazarev1, T. Byrnes2. 1. FRC PCP MC RAS, Chernogolovka, Russia. 2. New York University Shanghai, Shanghai, China. |
|
15.20 |
q2-15 |
Decoherence measure of single-qubit ion gate. L. Fedichkin1, A. Kuznetsova2. 1. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Moscow, Russia. |
15.40 – 16.00 Coffee break
Session 17. Optoelectronic Structures and Devices II
Session Chairman: Andrey Miakonkikh, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
|
16.00 |
O2-25 |
Comparative Analysis of Computational Methods for Modeling Nanophotonic Resonators. A.I.Garifullin, V.K. Boldysheva, O.A. Ermishev, N. Arslanov. Kazan National Research Technological University named after A. N. Tupolev – KAI, Kazan Quantum Center, Kazan, Russia. |
|
16.20 |
O2-26 |
Search for optimal parameters of a multimode optical waveguide made of composite polymer for photon pair generation. O. Ermishev, V. Boldysheva, N. Arslanov. Kazan National Research Technical University named after A.N. Tupolev – KAI, Kazan Quantum Center, Kazan, Russia. |
|
16.40 |
O2-27 |
Search for optimal parameters of a multimode optical splitter made of composite polymer. V. Boldysheva, O. Ermishev, N. Arslanov. Kazan National Research Technological University named after A.N. Tupolev – KAI, Kazan Quantum Center, Kazan, Russia. |
|
17.00 |
O2-28 |
Propagation of light fluxes in symmetrical fiber. V. Egorov1, E. Egorov1,2. 1. Institute of Microelectronics Technology and High-Purity Materials of RAS, Chernogolovka, Russia. 2. Institute of Radioengineering and Electronics RAS, Fryazino, Russia. |
|
17.20 |
O2-29 |
Propagation of surface plasma oscillations along a metal nanolayer. O.V. Savenko, I.A. Kuznetsova. P.G. Demidov Yaroslavl State University, Yaroslavl, Russia. |
Session 18. Ferroelectric Devices for Microelectronics
Session Chairman: Konstantin Rudenko, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
|
16.00 |
O2-30 |
Demonstration of ferroelectric Hf0.5Zr0.5O2-based 1T-1C FeFET integrated with 350 nm CMOS technology. A.A. Chouprik1, P.S. Zakharov2, V.S. Konstantinov1,2, I.A. Mutaev1, S.V. Ilyev1, A.A. Scherbakov1. 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 2. Molecular Electronic Research Institute, Zelenograd, Russia. |
|
16.20 |
O2-31 |
Algorithmically Enforced Multi-Level Polarization in Ferroelectric Hf0.5Zr0.5O2-based Capacitors: A Proof-of-Concept. N. Sizykh, M. Spiridonov, A. Khanas, A. Zenkevich. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. |
|
16.40 |
O2-32 |
Rescheduled to Poster Session II (P2-17). |
Session 19. Quantum Informatics VII
Session Chairman: Ilya Lazarev, Federal Research Center of Problems of Chemical Physics and Medical Chemistry RAS, Chernogolovka, Russia, Moscow, Russia.
|
16.00 |
q2-16 |
State control and measurement system for semiconductor quantum dots-based qubits. P. Mikhailov1,2 (online), M. Surkov1, V. Shorokhov1,2, A. Trifonov1,2. 1. Faculty of Physics, Moscow State University, Moscow, Russia. 2. Russian Quantum Center, Moscow, Russia. |
|
16.20 |
q2-17 |
Application a quantum machine learning algorithm to the applied problem of modeling the thermal regime of a server. P. Buzin1, M. Remnev1. 1. Cloud.ru (LLC “Cloud technologies”), Moscow, Russia. |
|
16.40 |
q2-18 |
Analysis of the generalized Dirac equation. V. Turin1, D. Kireev1, I. Nazritsky1, P. Andreev1, A. Skripchenko1, E. Burtsev1, A. Turina2, I. Shcheglov2, Y. Ilyushina3. 1. Orel State University named after I.S. Turgenev, Orel, Russia. 2. School #51, Orel, Russia. 3. Moscow Aviation Institute (National Research University), Moscow, Russia. |
|
17.00 |
q2-19 |
Evaluation of the Efficiency of Quantum Information Processors. L.E. Fedichkin, D.A. Tarpanov. NRC “Kurchatov Institute” – Valiev Division of Physics and Technology, Moscow, Russia. |
|
17.20 |
q2-20 |
Stationary current and shot noise in electron transport through a double quantum dot system. L. Fedichkin1, T. Fakhrutdinov2. 1. NRC “Kurchatov Institute” – Valiev Division of Physics and Technology, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Moscow, Russia. |
17.40 – 18.40 POSTER SESSION I
Thursday, October 9, 2025
Session 20. Metrology and Diagnostics for Materials and Structures I
Session Chairman: Konstantin Rudenko, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
|
9.00 |
O3-01 |
Scanning probe microscopy today – from micro and nanoelectronics to molecular biology and medicine. V.A. Bykov, T.G. Matyushin. XILLECT LLC, TECHNOSTACK HOLDING LLC, Moscow, Russia. |
|
9.20 |
O3-02 |
Thin-film characterization using bench-top XRD system. O. Korneychik1, M.V. Rzheutski2, D.M. Kabanau2. 1. Technoinfo, Moscow, Russia. 2. Advin Smart-Factory, Minsk, Republic of Belarus. |
|
9.40 |
O3-03 |
Semiconductor characterization by Time-resolved photoluminescence and microscopy. D. Pleshkov1, D. Ding2, S. Zhao2. 1. Technoinfo, Moscow, Russia. 2. Zolix Instruments Co. Ltd., Beijing, China. |
|
10.00 |
O3-04 |
Application of scanning electron microscopy for measurement and control of critical dimensions in microelectronics. E.A. Kozlov1,2, O.Yu. Sokolova1, D.S. Stelmakh1, A.S. Bondarenko3 (online). 1. TechnoInfo, LLC, Moscow, Russia. 2. P.G. Demidov Yaroslavl State University, Yaroslavl, Russia. 3. Scientific Technologies and Service, LLC, Chernogolovka, Russia. |
|
10.20 |
O3-05 |
Rescheduled to Session 26 “Plasma Modeling and Plasma Microtechnologies II”. |
Session 21. Resistive Switching and Memristor Effect I
Session Chairman: Alexander Rogozhin, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
|
9.00 |
O3-06 |
Conductive filament formation in annealed HfOx-based memristors deposited by thermal and plasma-enhanced atomic layer deposition. A.G. Isaev, I.F. Kalimova, A.E. Rogozhin. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
9.20 |
O3-07 |
Low variability bipolar resistive switching with reverse polarity in HfO2-based memristive structures. O. Permiakova, I.Kalimova, A. Miakonkikh, A. Rogozhin. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
9.40 |
O3-08 |
The model of sequential resistive switching in a filamentary memristor cell. A. Fadeev (online), K. Rudenko. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
10.00 |
O3-09 |
Memristors Based on Amorphous Silicon with a Zirconium Oxide Barrier Layer Fabricated by Magnetron Sputtering. D. Ichyotkin1,2, I. Zadiriyev2,3, K. Chernoglazov1, V. Demin1, V. Rylkov2,4. 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 2. National Research Center “Kurchatov Institute,” Moscow, Russia. 3. Lomonosov Moscow State University, Moscow, Russia. 4. Kotel’nikov Institute of Radio Engineering and Electronics RAS, Fryazino, Russia. |
|
10.20 |
O3-10 |
Features and functional characteristics of memristive structures based on yttrium-doped zirconium oxide. A. Vankaev1 (online), E. Klyukina1, O. Soltanovich1, S. Koveshnikov1, I. Antonov2, A. Kruglov2, A. Mikhaylov2, O. Gorshkov2. 1. Institute of Microelectronics Technology and High-Purity Materials of RAS, Chernogolovka, Russia. 2. Lobachevsky State University of Nizhny Novgorod, Nizhniy Novgorod, Russia. |
Session 22. Sensors and MEMS I
Session Chairman: Ilya Uvarov, Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia.
|
9.00 |
O3-11 |
Canceled. |
|
9.20 |
O3-12 |
Canceled. |
|
9.40 |
O3-13 |
Development of a highly sensitive strain sensor based on nitrogen-doped carbon nanotubes. M. Il’ina (online), O. Soboleva, A. Shelyag, О. Il’in. Southern Federal University, Taganrog, Russia. |
|
10.00 |
O3-14 |
Canceled. |
|
10.20 |
O3-15 |
The use of MEMS accelerometers in the absence of positioning signals and a method for verifying their characteristics. L. Chelyshev1, S. Timoshenkov2. National Research University “Moscow Institute of Electronic Technology”, Moscow, Russia. |
10.40 – 11.00 Coffee break
Session 23. Plasma Modeling and Plasma Microtechnologies I
Session Chairman: Andrey Miakonkikh, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
|
11.00 |
O3-16 |
Plasma Parameters and Active Species Kinetics in SF6 mixed with Argon, Helium and Oxygen. A. Miakonkikh1, V. Kuzmenko1, A. Efremov1,2 (online), K. Rudenko1. 1. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. 2. Molecular Electronics Research Institute (MERI), Zelenograd, Russia. |
|
11.20 |
O3-17 |
A model for plasma etching of polysilicon in HBr/Cl2/Ar mixture. F. Oksanichenko (online), A. Efremov. JSC Molecular Electronics Research Institute, Zelenograd, Russia. |
|
11.40 |
O3-18 |
Concerning the influence of various oxygen-containing additives on composition of CHF3 and C4F8 plasmas. E. Koryakova1 (online), A. Efremov1, K.-H. Kwon2. 1. Molecular Electronics Research Institute (MERI), Zelenograd, Russia. 2. Korea University, Sejong, Republic of Korea. |
|
12.00 |
O3-19 |
On the influence of control parameters in plasma chemical etching on the spatial uniformity. Yu. Zakharov1,2 (online), A. Efremov2. 1. Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Russia. 2. JSC «Molecular Electronics Research Institute» (MERI), Zelenograd, Russia. |
|
12.20 |
O3-20 |
Some properties of argon as an actinometric atom. III. Parameters of the reduced global model. V.P. Kudrya. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
Session 24. Resistive Switching and Memristor Effect II
Session Chairman: Olga Permiakova, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
|
11.00 |
O3-21 |
Organic and hybrid memristors based on parylene for wearable neuromorphic electronics. A.V. Emelyanov, B.S Shvetsov, A.D. Trofimov, A.N. Matsukatova, G.A. Yuklyaevskikh, M.A. Ryabova, V.V. Rylkov, V.A. Demin. National Research Centre “Kurchatov Institute”, Moscow, Russia. |
|
11.20 |
O3-22 |
Resistive switching of memristors based on (CoFe)x(LiNbO3)100–x nanocomposite with Ni electrode. S. Nikolaev1, G. Nikolaev1, A. Sitnikov1,2, A. Emelyanov1,2, V. Demin1, V.V. Rylkov1,3. 1. National Research Center «Kurchatov Institute», Moscow, Russia. 2. Voronezh State Technical University, Voronezh, Russia. 3. Kotel’nikov Institute of Radio Engineering and Electronics RAS, Fryazino, Russia. |
|
11.40 |
O3-23 |
Resistive switching of memristors based on Yttrium Stabilized Zirconia with various active electrodes. A. Kruglov, D. Serov, A. Belov, I. Antonov, A. Mikhaylov, D. Filatov, O. Gorshkov. Lobachevskii University of Nizhni Novgorod, Nizhni Novgorod, Russia. |
|
12.00 |
O3-24 |
Study of formation of conductive filaments in polycrystalline films based on Hf0.5Zr0.5O2. N. Zhidkov, A. Khanas, A. Zenkevich. Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Russia. |
|
12.20 |
O3-25 |
Planar TiO2/graphene memristive nanostructures for neuromorphic electronics. I. Jityaev (online), M. Kartel, Yu. Jityaeva, V. Smirnov. Southern Federal University, Taganrog, Russia. |
Session 25. Sensors and MEMS II
Session Chairman: Ildar Amirov, Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia.
|
11.00 |
O3-26 |
Micromechanical RF switch with metal-to-metal contact. I.V. Uvarov1,2, I.A. Belozerov1,2, M.O. Morozov1,2. 1. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. 2. P.G. Demidov Yaroslavl State University, Yaroslavl, Russia. |
|
11.20 |
O3-27 |
A reconfigurable RF MEMS switch for wireless communication systems. M.O. Morozov1,2, I.V. Uvarov1. 1. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. 2. P.G. Demidov Yaroslavl State University, Yaroslavl, Russia. |
|
11.40 |
O3-28 |
Finite element simulation of the MEMS switch contact temperature. I.A. Belozerov, I.V. Uvarov. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. |
|
12.00 |
O3-29 |
Canceled. |
|
12.20 |
O3-30 |
Design of a microwave phaseshifter based on a microelectromechanical varactor for next-generation communication systems. A.M. Belevtsev, I.K. Epaneshnikova, V.L. Kryuchkov, I.O. Dryagin. Moscow Aviation Institute (National Research University), Moscow, Russia. |
13.00 – 14.00 Lunch
14.00 – 17.20 Yaroslavl City Excursion
14.00 – 17.20 Thin film deposition technologies training (Conference-Hall)
14.00 – 17.20 Round table “Quantum Technologies” (Auditorium A)
17.40 – 18.40 POSTER SESSION II
19.00 Conference Dinner
Friday, October 10, 2025
Session 26. Plasma Modeling and Plasma Microtechnologies I
Session Chairman: Andrey Miakonkikh, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
|
9.00 |
O4-01 |
Physical principles of sidewall profile control in situ in cryogenic plasma etching process of HAR silicon microstructures. K. Rudenko, A. Miakonkikh, V. Kuzmenko, K. Fetisenkova, A. Melnikov. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
9.20 |
O4-02 |
Comparative characteristics of microelectronic deep etching technologies for X-ray optics applications. M. Sorokovikov1 (online), D. Zverev1, I. Lyatun1, A. Barannikov1, M. Voevodina1, V. Yunkin2, A. Miakonkikh3, K. Rudenko3, A. Snigirev1. 1. Immanuel Kant Baltic Federal University, Kaliningrad, Russia. 2. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
9.40 |
O4-03 |
Modeling of the Langmuir Space Charge Layer in Inductively Coupled Plasma for Micro- and Nanoelectronics Applications. R. Khalilullin, V. Kuzmenko, A. Miakonkikh. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
10.00 |
O4-04 |
Homogeneity of the etching and sputtering processes across the wafer in ICP plasma etching tool. V. Kuzmenko, R. Khalilullin, A. Miakonkikh, K. Rudenko. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
10.20 |
O3-05 |
Plasma technologies for material processing in micro and nanoelectronics: current state and prospects. K. Kuvaev, A. Krynin. Technoinfo OOO, Moscow, Russia. |
Session 27. Resistive Switching and Memristor Effect III
Session Chairman: Olga Permiakova, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
|
9.00 |
O4-05 |
Mathematical modeling of charge transport in the dielectric layer of a HfOx memristor taking into account single charged traps. D. Islamov1,2, T. Zalyalov1, V. Voronkovskii1, A. Markelova1, A. Pil’nik3, M. Davydov2,4, A. Chernov1,2,3. 1. Institute of Semiconductor Physics, Novosibirsk, Russia. 2. Novosibirsk State University, Novosibirsk, Russia. 3. Institute of Thermophysics, Novosibirsk, Russia. 4. Institute of Hydrodynamics, Novosibirsk, Russia. |
|
9.20 |
O4-06 |
Charge transport and traps origin in SiOx-based memristors obtained by the treatment in hydrogen ECR plasma. D. Islamov1,2, R. Iskhakzai1, V. Voronkovskii1, T. Perevalov1, V. Aliev1,2, V. Gritsenko1,2. 1. Institute of Semiconductor Physics, Novosibirsk, Russia. 2. Novosibirsk State University, Novosibirsk, Russia. |
|
9.40 |
O4-07 |
Charge transport in MIS structures ITO/[GeOx](z)[SiO2](1 – z)/Si. I. Yushkov1,2, A. Gismatulin1, G. Kamaev1, M. Vergnat3. V.A. Volodin1,2. 1. Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia, 3. Université de Lorraine, Nancy, France. |
|
10.00 |
O4-08 |
Hybrid Memristor-CMOS System: Circuit Design Solutions for Control and Data Processing. A.A. Tokarev1 (online), I.A. Khorin2. 1. MIREA — Russian Technological University, Moscow, Russia. 2. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
10.20 |
O4-09 |
Spatial filtering of image noise based on the spot apparatus. N.A. Simonov. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
Session 28. Sensors and MEMS III
Session Chairman: Ilya Uvarov, Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia.
|
9.00 |
O4-10 |
MEMS as scientific instruments: Precise measurement of the adhesion energy with an adhered cantilever. A.V. Postnikov1, I.V. Uvarov1, P.S. Shlepakov1, V.B. Svetovoy2. 1. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. 2. Frumkin Institute of Physical Chemistry and Electrochemistry of RAS, Moscow, Russia. |
|
9.20 |
O4-11 |
Study of resonance properties of multilayer membrane microelectromechanical structure. S. Petrova1 (online), E. Gusev1, L. Jiang2, V. Klimin3, V. Polyakov1, S. Wang2, L. Han2,4, Z. Wei4, O. Ageev1,5. 1. Institute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, Taganrog, Russia. 2. Shandong Key Laboratory of Optoelectronic Sensing Technologies, Laser Institute of Shandong Academy of Sciences, Jinan, China. 3. Institute of Radio Engineering Systems and Control, Southern Federal University, Taganrog, Russia. 4. International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan, China. 5. Research and Education Center “Nanotechnologies”, Southern Federal University, Taganrog, Russia. |
|
9.40 |
O4-12 |
Increasing performance of a microactuator based on a hydrogen-oxygen mixture explosion. P. Shlepakov1, V. Svetovoy2, I. Uvarov1. 1. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. 2. Frumkin Institute of Physical Chemistry and Electrochemistry of RAS, Moscow, Russia. |
|
10.00 |
O4-13 |
Passive microfluidic valve with reduced threshold pressure. P. Shlepakov, O. Morozov, I. Uvarov. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. |
10.40 – 11.00 Coffee break
Session 29. Plasma Modeling and Plasma Microtechnologies III
Session Chairman: Konstantin Rudenko, Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia.
|
11.00 |
O4-14 |
Forming of microstructured “black silicon” by plasma etching and study of its properties. A.V. Miakonkikh, V.O. Kuzmenko, E.A. Smirnova. Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
11.20 |
O4-15 |
Formation of structures on the SiC surface by plasma chemical etching. V. Klimin1 (online), P. Tarasov1,2, M. Grigoryev1,2, P. Gavrish1,2, A. Tkacheva1,2, V. Ptashnik1,2, O. Ageev1,3. 1. Southern Federal University, Taganrog, Russia. 2. JSC «TNIIS», Taganrog, Russia. 3. Research and Education Center “Nanotechnologies” of Southern Federal University, Taganrog, Russia. |
|
11.40 |
O4-16 |
Canceled. |
|
12.00 |
O4-17 |
Canceled. |
Session 30. Metrology and Diagnostics for Materials and Structures II
Session Chairman: Ildar Amirov, Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia
|
11.00 |
O4-18 |
Estimation of film thickness using the modified Williamson-Hall technique. P.B. Mozhaev (online). Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia. |
|
11.20 |
O4-19 |
Modification of constant voltage stress method for characterizing time-dependent dielectric breakdown of thin gate dielectrics of MOS devices. D.V. Andreev1 (online), S.A. Kornev1, V.M. Maslovsky2, V.V. Andreev1. 1. Bauman Moscow State Technical University, Moscow, Russia. 2. Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Russia. |
|
11.40 |
O4-20 |
Еxpress analysis for heterostructures quality. V. Atyunin (online), V. Borichok, E. Kobzev, O. Rabinovich, A. Savchuk, M. Orlova, U. Osipov, I. Borzih. National University of Science and Technology MISIS, Moscow, Russia. |
12.00. Conference Hall. Closing remarks
V.F. Lukichev, Program Committee Chair
Valiev Division of Physics and Technology, NRC “Kurchatov Institute”, Moscow, Russia
POSTER SESSIONS
Wednesday, October 8, 2025
17.40 – 18.40 Poster session I
Semiconductor Devices
|
P1-01 |
Accurate analytical modeling of the influence of series resistances in field-effect transistors. A. Krivenkov1, G. Bokitko2, V. Turin3, G. Zebrev2. 1. «Krasnoznamensk Semiconductor Factory «Arsenal», Krasnoznamensk, Russia. 2. National Research Nuclear University MEPHI, Moscow. 3. Orel State University, Orel, Russia. |
|
P1-02 |
Physics-based modeling of critical charge in modern digital electronics and single event failure rate prediction in different radiation environments. A. Mateiko1, A. Rodin1, I. Makarova1, G. Zebrev1, E. Abramova2. 1. National Research Nuclear University MEPHI, Moscow, Russia. 2. JSC “Nootronyka”, Moscow, Russia. |
|
P1-03 |
Plasmon resonances in a square-gate graphene transistor structure in the terahertz range. K.V. Mashinsky1, A.A. Shamarina1,2, D.V. Fateev1,2. 1. Kotelnikov Institute of Radio Engineering and Electronics of RAS (Saratov branch), Saratov, Russia, fateevdv@yandex.ru.2. Saratov State University, Saratov, Russia. |
Devices for Neuromorphic Systems
|
P1-04 |
Canceled. |
|
P1-05 |
Electroforming of memristors based on open TiNSiO2Mo sandwich structures in a moderate regime. V.M. Mordvintsev, E.S. Gorlachev. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. |
Devices for Photonics and Optoelectronics
|
P1-06 |
Plasmon resonance in a sub-THz graphene-based detector: theory and experiment. I. Moiseenko1, E. Titova1, M. Kaschenko1, D. Bandurin2, D. Svintsov1. 1. Laboratory of 2d Materials for Optoelectonics, Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 2. Department of Materials Science and Engineering, National University of Singapore, Singapore. |
|
P1-07 |
Modeling and analysis of micro-ring resonators in photonic integrated circuits. A. Nezhdanov, A. Skrylev, K. Sidorenko, D. Shestakov, G. Lemeshevskaya, A. Bobrov. Research Institute of Physics and Technology, Lobachevsky State University of Nizhniy Novgorod, Nizhny Novgorod, Russia. |
Sensors and MEMS
|
P1-08 |
Amidated and carboxylated carbon nanotubes for recognition of ammonia and alcohols in humid air. A.V. Romashkin, V.V. Nepomilueva. National Research University of Electronic Technology, Moscow, Russia. |
|
P1-09 |
The influence of the operating temperature of the sensitive element of the gas flow sensor on its output characteristics. V. Koshelev1, G. Demin1, N. Djuzhev1, V. Ryabov2. 1. National Research University of Electronic Technology (MIET), Moscow, Russia. 2. Bauman Moscow State Technical University Moscow, Russia. |
|
P1-10 |
Development of micromechanical capacitive actuator for RF switch application. O.V. Morozov, I.A. Belozerov. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. |
Quantum Technologies
|
P1-11 |
Predicting Quantum Capacitance of a SOI Nanowire Induced Quantum Dot: On-chip Quantum Chemistry Approach. I. Kopchinskii1,2, V. Shorokhov1,2, A. Popov1,2, N. Shagalov2. 1. Russian Quantum Center, Skolkovo Innovation Center Territory, Moscow, Russia. 2. Faculty of Physics, Lomonosov Moscow State University, Moscow, Russia. |
|
P1-12 |
Application of the HOBO-formulation for solving the travelling salesman problem using variational quantum algorithms. G. Shuvalov, E. Krivtsova, A. Kapranov, M. Remnev. Cloud.ru, Moscow, Russia. |
|
P1-13 |
Automatic optical power control for satellite communication system in low-photon mode. D. Sevryukov1,2, A. Khmelev1,3,4,5, V. Merzlinkin1,4, V. Kurochkin1,3,4,5, R. Ozhegov2,4. 1. QSpace Technologies, Moscow, Russia. 2. HSE University, Moscow, Russia. 3. Russian Quantum Center, Moscow, Russia. 4. National University of Science and Technology MISIS, Moscow, Russia. 5. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. |
Lithography
|
P1-14 |
Causes of the LER-еffect and methods for its minimization in the fabrication of integrated circuits. M.S. Kulpinov, M.G. Putrya, A.A. Golishnikov, V.V. Losev. National Research University “MIET”, Zelenograd, Russia. |
|
P1-15 |
Modeling and consideration of the factors of the LER effect in the design of integrated circuits. M.S. Kulpinov, M.G. Putrya, A.A. Golishnikov, V.V. Losev, V.V. Loseva, A.D. Kalenov, A.Yu. Krasyukov. National Research University “MIET”, Zelenograd, Russia. |
|
P1-16 |
Study of influence of Mo-Si structural parameters on optical properties of masking coating for photomask. N.V. Krohan, R.A. Sharipov, V.I. Shevyakov, A.I. Novoseltsev, O.V. Novikova, A.V. Anikin. National Research University “MIET”, Zelenograd, Russia. |
|
P1-17 |
Development and Research of a Photoresist Material for Fabrication Technology of Microwave Coplanar Waveguides with High Aspect Ratio. E. Yurtova, A. Bobrov. Research Institute of Physics and Technology, Lobachevsky State University of Nizhniy Novgorod, Nizhny Novgorod, Russia. |
|
P1-18 |
Complex application of electron-beam and contact lithography for the fabrication of efficient diffraction gratings based on Thin-Film Lithium Niobate. G. Lemeshevskaya1, P. Volkov2, A. Bobrov1, A. Nezhdanov1, L. Vinogradova1, O. Vyazankin2. 1. Research Institute of Physics and Technology, Lobachevsky State University of Nizhniy Novgorod, Nizhny Novgorod, Russia. 2. The Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia. |
Delayed Abstracts
|
P1-19 |
Resistive non-volatile memory based on silicon oxide deposited by atomic layer deposition using an aminodisilane-based precursor. A. Reznik1,2, A. Rezvanov1,2. 1. JSC Molecular Electronics Research Institute, Zelenograd, Moscow, Russia. 2. Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Russia. |
Thursday, October 9, 2025
17.40 – 18.40 Poster session II
Thin Film Materials and Nanocomposites
|
P2-01 |
Atomistic investigation of the ferroelectric and dielectric properties of AlN-based films. I. Margolin, I. Savichev, E. Kalika, A. Chouprik. Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Russia. |
|
P2-02 |
The influence of the thickness of GaN, AlN epitaxial films on the radius of curvature of gallium nitride heterostructures on Si. D. Kurbanbaeva, A. Lashkov, V. Korneev, K. Tsarik. National Research University of Electronic Technology, Moscow, Russia. |
|
P2-03 |
Study of electrical properties of SiO2/Si structures under selective growth of graphene-like films. O. Soltanovich, M. Knyazev, D. Sedlovets, V. Korotitsky, S. Koveshnikov. Institute of Microelectronics Technology RAS, Chernogolovka, Russia. |
|
P2-04 |
Features of dissipative processes during annealing of silicon structures with buried silicate layers. Yu. Denisenko. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. |
|
P2-05 |
Peculiarities of Thermal Deposition of Gold Films on Mesoporous Silicon. K. Kim1, A. Lenshin1,2, S. Chernenko1, S. Niftaliev1. 1. Voronezh State University of Engineering Technologies, Voronezh, Russia. 2. Voronezh State University, Voronezh, Russia. |
|
P2-06 |
Study of the Structure of Mesoporous Silicon with Deposited Silver. K. Kim¹, A. Lenshin¹,², S. Chernenko¹, S. Niftaliev¹.1. Voronezh State University of Engineering Technologies, Voronezh, Russia. 2. Voronezh State University, Voronezh, Russia. |
|
P2-07 |
The electrochemical crystallization technology features of nanocylindrical with high-aspect ferromagnets Fe, Ni, Co in the pores of anodic aluminum oxide. E.A. Grushevsky1, N.G. Savinski1, L.A. Mazaletsky1, O.S. Trushin1, L.A. Shendrikova2.. 1. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. 2. Moscow State University, Moscow, Russia. |
Micro Batteries
|
P2-08 |
3d structured lithium ion micro battery. A. Rudy, E. Kozlov, S. Kurbatov, V. Bachurin, M. Smirnova. Laboratory of Physics and Electrochemistry of Solid-State Current Sources, Scientific Research Department, P.G. Demidov Yaroslavl State University, Yaroslavl, Russia. |
|
P2-09 |
The structure and phase composition of the Si@O@Al composite electrode material. A. Rudy, E. Kozlov, S. Kurbatov. Laboratory of Physics and Electrochemistry of Solid-State Current Sources, Scientific Research Department, P.G. Demidov Yaroslavl State University, Yaroslavl, Russia. |
|
P2-10 |
Investigation of Lithium Deposition in Anode-Free Thin-Film Batteries Using RBS. S. Kurbatov1,2, N. Melesov2, E. Parshin2, A. Rudy1,2, V. Naumov1,2. 1. P.G. Demidov Yaroslavl State University, Yaroslavl, Russia, 2. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. |
Technology of Chiral Nanostructures
|
P2-11 |
Modeling the growth of chiral nanostructures by glancing angle deposition. M.M. Chebokhin, I.S. Fattakhov, A.A. Popov, O.S. Trushin. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. |
|
P2-12 |
Impact of a porous aluminum nanotemplate on the growth and optical activity of nanospirals obtained by oblique angle deposition. I.S. Fattakhov1, O.S. Trushin1, A.A. Popov1, E.A. Grushevsky1, L.A. Mazaletskiy1, M.V. Logunov2,3, A.S. Fedorov2,3. 1. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. 2. Kotelnikov Institute of Radio Engineering and Electronics of RAS, Moscow, Russia. 3. Moscow Institute of Physics and Technology (NRC), Dolgoprudny, Russia. |
|
P2-13 |
Circular dichroism and optical rotation in chiral copper and nickel nanostructures. I.S. Fattakhov1, O.S. Trushin1, A.A. Popov1, L.A. Mazaletskiy1, M.V. Logunov2,3, A.S. Fedorov2,3. 1. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. 2. Kotelnikov Institute of Radio Engineering and Electronics of RAS, Moscow, Russia. 3. Moscow Institute of Physics and Technology (NRC), Dolgoprudny, Russia. |
Ion-Beam and Plasma Processing
|
P2-14 |
Temperature dependence of the wave-like nanostructure period during sputtering of silicon with nitrogen ions. V.K. Smirnov, D.S. Kibalov, V.I. Bachurin, A.B. Churilov, A.S. Rudy. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. |
|
P2-15 |
Formation of porous lead micro- and nanostructures on the surface of PbX (X = Se, S, Te) during ion-plasma treatment near the sputtering threshold. S. Zimin1,2, I. Amirov2, L. Mazaletskiy1, N. Kolesnikov3, D. Ershov1, A. Chelnokov1, Ya. Belov2. 1. P.G. Demidov Yaroslavl State University, Yaroslavl, Russia. 2. Valiev Division of Physics and Technology, Yaroslavl Branch, NRC “Kurchatov Institute”, Yaroslavl, Russia. 3. Institute of Solid State Physics of RAS, Chernogolovka, Russia. |
3D Integration
|
P2-16 |
Impedance optimization of the power distribution network in a three-dimensional microassembly with back side commutation. S. Batin, S. Semenov, D. Vertyanov, S. Timoshenkov. National Research University of Electronic Technology – MIET, Zelenograd, Russia. |
Ferroelectric Devices for Microelectronics
|
P2-17 |
Memcapacitor employing ferroelectric Hf0.5Zr0.5O2 layer. N. Sizykh, A. Khanas, A. Zenkevich. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. Ex. O2-32 |
