Monday, October 5th, 2009
9.00 – …Registration & Accommodation
13.00 – 14.00 Lunch
Conference hall
Special Session. Presentations of Hi-Tech Companies
14.30 |
S-00/1 |
Milestones of analytical FE-SEM technology – Zeiss Merlin System. Uwe Anton Schubert, Carl Zeiss NTS GmbH, Germany. |
15.00 |
S-00/2 |
Electron beam lithography tools for nanoelectronic devices. Leonid Litvin, Raith GmbH, Germany |
15.30 |
S-00/3 |
Applications of Electron Beam Lithography. Martin Kirchner, Raith GmbH, Germany |
16.00 |
S-01 |
JEOL Industrial Electron Beam Lithography Systems. Mr. Kamide, General Manager of JEOL Semiconductors Equipment Department |
16.30 |
S-02 |
Nanoimprint Lithography: Principles, Possibilities, and High Volume Manufacturing. Marc Beck. Eurotek, Inc., Germany |
17.00 |
S-03 |
TechnoInfo products overview. A. Kuznetsov. Technoinfo Ltd., London, UK |
17.30 |
S-04 |
Technological complexes for MEMS and NEMS research and development. Victor Bykov. NT-MDT Co., Zelenograd, Russia |
18.00 – Welcome Party
19.00 – Dinner
Tuesday, October 6th, 2009
8.15 – Breakfast
Conference hall
8.50 – WELCOME REMARKS
E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow
K.A. Valiev, Program Chair, IPT RAS, Moscow
Plenary Session I
Session Chairman: Alexander Orlikovsky, Institute of Physics &Technology RAS, Russia
9.00 |
L1-01 |
KEYNOTE: Nanoelectronic devices and materials for the end of the roadmap. G. Ghibaudo and F. Balestra. IMEP-LAHC, Minatec (CNRS-Grenoble INP, UJF, US), Grenoble, France |
9.40 |
L1-02 |
KEYNOTE: Challenges of Advanced Interconnects: from Cu/low-k to Wireless. T. Kikkawa. Research Institute for Nanodevice and Bio Systems, Hiroshima University, Japan. |
10.20 |
L1-03 |
INVITED: Electromigration theory and its applications to integrated circuit metallization. T. Makhviladze, M. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia |
11.00 |
L1-04 |
INVITED: IMEC: from aggressive CMOS scaling to Nanomaterials. Mikhail Baklanov and Patric Verbist. Interuniversitair Microelectronica Centrum (IMEC), Leuven, Belgium. |
11.40-12.00 Coffee break. Winter garden
Conference Hall
Session 1. Advanced Lithography
Session Chairman: Vladimir Lukichev, Institute of Physics &Technology RAS, Russia
12.00 |
L1-05 |
INVITED: Immersion Lithography and Double Patterning in Advanced Microelectronics. T. Vandeweyer, J. Bekaert, M. Ercken, R. Gronheid, A. Miller, V. Truffert, J. Versluijs, V. Wiaux, P. Wong, G. Vandenberghe, M. Maenhoudt. IMEC vzw, Leuven, Belgium |
12.30 |
O1-01 |
Projection photolithography modeling using the finite-difference time-domain approach. T. Makhviladze, M. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. |
12.50 |
O1-02 |
Influence of thermal annealing on the structural and optical properties of thin multilayer EUV filters containing Zr, Mo and silicides of these metals. N.I. Chkhalo1, S.A. Gusev1, M.N. Drozdov1, E. B. Kluenkov1, A.Ya. Lopatin1, V.I. Luchin1, A.E. Pestov1, N.N. Salashchenko1, L.A. Shmaenok2, N.N. Tsybin1. 1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia 2. PhysTeX, Vaals, Netherlands Institute of Semiconductor. |
13.10 |
O1-03 |
Manufacturing of diffraction quality optical elements for high resolution optical systems. N.I. Chkhalo, A.E. Pestov, N.N. Salashchenko, M.N. Toropov. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia |
Auditorium A
Session 2. Simulation and Modeling I
Session Chairman: Vladimir Vyurkov, Institute of Physics &Technology RAS, Russia
12.00 |
O1-04 |
Nanoelectronic device simulation software system NANODEV: New opportunities. I.I. Abramov, A.L. Baranoff, I.A. Goncharenko, N.V. Kolomejtseva, Y.L. Bely. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus. |
12.20 |
O1-05 |
The charge sharing inside the layers of nano- CMOS integrated structures under controllable substrate biasing. T. Krupkina, D. Rodionov, A. Shvets, I. Titova. Moscow Institute of Electronic Engineering, Moscow, Russia |
12.40 |
O1-06 |
Analysis of lateral thermal SOA for smart power IC’s. Yu. Chaplygin, А. Krasukov, E. Artamonova. Moscow Institute of Electronic Technology (Technical University |
13.00 |
O1-07 |
Advanced atomic-scale simulation of silicon nitride CVD from dichlorosilane and ammonia. T. Makhviladze, A. Minushev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia |
Auditorium B
Session 3. Photonics and Optoelectronics I
Session Chairman: Sergey Nikitov, Institute of Radioengineering and Electronics RAS, Russia
12.00 |
O1-08 |
One-dimensional Photonic Crystals on Silicon as Optical Elements for Integrated Microphotonics. V. Tolmachev1, E. Astrova1, T. Perova2. 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia, 2. Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland |
12.20 |
O1-09 |
Reduction of noise in atomic system driven by squeezed coherent field. A. Gelman, V. Mironov. Institute of Applied Physics of Russian Academy of Sciences, Nizhny Novgorod , Russia |
12.40 |
O1-10 |
Enhancement of Optical Properties by Surface Nanostructuring. V.V. Nanumov1 , V.A. Paporkov2 , N.A. Rud2 , E.I. Vaganova1 , A.V. Prokaznikov1. 1. Yaroslavl Branch of Institute of Physics and Technology RAS, Yaroslavl, Russia 2. Yaroslavl State University named after Demidov P.G., Yaroslavl, Russia |
13.00 |
O1-11 |
Excitation dependence of infrared emission at 1.5-1.6 µm from defect-rich Si layers. A.A. Shklyaev1,2, A.B. Latyshev1,2, M. Ichikawa3 1. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia 3. Quantum-Phase Electronics Center, Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Tokyo, Japan |
13.30-14.30 Lunch
Conference Hall
Session 4. Nanodevices and Nanostructures I
Session Chairman: Vitaly Aristov. Institute of Microelectronics Technology, RAS, Russia
14.30 |
O1-12 |
Electronic transport in heterogeneous nanometer FET channels. V. P. Popov. Institute of Semiconductor Physics, Novosibirsk, Russia |
14.50 |
O1-13 |
Ballistic and Pseudo-Relativistic Carrier Transport in Graphene. G. I. Zebrev. Micro- and Nanoelectronics Department, National Research Nuclear University “MEPHI”, Moscow, Russia |
15.10 |
O1-14 |
Comparative studies of single- and double-nanocrystal layer NVM structures: charge accumulation and retention. V. Turchanikov1, V. Ievtukh1, A. Nazarov1, V. Lysenko1, M. Theodoropoulou2, A.G. Nassiopoulou2 . 1. Lashkaryov Institute of Semiconductor Physics NASU, Kyiv, Ukraine, 2. IMEL/NCSR Demokritos, Athens-Greece |
15.30 |
O1-15 |
Silicon nanoballs recharging in plasma-chemical oxide of nanometric thickness. M.D. Efremov1,2, S.A. Arzhannikova1,2, V.A. Volodin1,2, G.N. Kamaev1,2, S.A. Kochubei1, I.G. Neizvestny1 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia |
15.50 |
O1-16 |
Charges and states in nitrided buried dielectrics of SOI structures. V. P. Popov, I.E. Tyschenko. Institute of Semiconductor Physics, Novosibirsk, Russia. |
Auditorium A
Session 5. Superconducting Structures and Devices I
Session Chairman: Vladimir Lukichev, Institute of Physics &Technology RAS, Russia
14.30 |
L1-06 |
INVITED: Thermo-Electric Charge-to-Voltage Converter with an SIN Tunnel Junction for Bolometer Applications. L. Kuzmin. Chalmers University of Technology, Goteborg, Sweden. |
15.00 |
O1-17 |
DC SQUID modulation electronics for operation with HTS DC SQUID magnetometers in the unshielded environment. E.V. Burmistrov, V.Yu. Slobodchikov, V.V. Khanin, Yu.V. Maslennikov. Kotel’nikov Institute of Radio Engineering and Electronics of RAS, Moscow, Russia |
15.20 |
O1-18 |
Properties of planar Nb/?-Si/Nb Josephson junctions with various doped degree of ?-Si interlayers. A.L. Gudkov, A.A. Gogin, A.I. Kozlov, A.N. Samys. CJSC “Compelst”, FSUE “SRIPP n. F.V. Lykin”, Moscow, Zelenograd, Russia |
15.40 |
O1-19 |
The theoretical analysis of the new microwave detector based on a Josephson heterostructure. I.A. Devyatov1, M.Yu. Kupriyanov2 . 1. Lomonosov Moscow State University, Russia 2. Skobeltsyn Institute of Nuclear Physics, Moscow, Russia |
16.00 |
O1-20 |
«Сonventional» SQUIDs and quantum interferometers on matter waves in superfluid helium. A. Golovashkin1, G. Izmaїlov2, G. Kuleshova3, A. Tshovrebov1, L. Zherikhina1 . 1. Lebedev Physical Institute, Russian Academy of Science, Moscow, Russia; 2. Moscow Aviation Institute (State Technical University), Moscow, Russia 3. Moscow Engineering Physics Institute (State University) , Moscow, Russia |
Auditorium B
Session 6. Thin Films
Session Chairman: Andrey Vasiliev, FSU Enterprise“Pulsar”, Russia
14.30 |
O1-21 |
The thermodynamic theory of interfacial adhesion between materials containing point defects. R. Goldstein1, T. Makhviladze2, M. Sarychev2 1. Institute for Problems in Mechanics, Russian Academy of Sciences, Russia, 2. Institute of Physics and Technology, Russian Academy of Sciences, Russia. |
14.50 |
O1-22 |
The thickness-dependence of the polariton effect in the single quantum well. Yu.V. Moskalev1, S.B. Moskovski2. 1. Yaroslavl State Pedagogical University, Yaroslavl, Russia, 2. Yaroslavl State University, Yaroslavl, Russia |
15.10 |
O1-23 |
CoSi2/TiO2/SiO2/Si gate structure formation. A.E. Rogozhin 1, I.A Khorin 1,2, V.V. Naumov 1, A.A. Orlikovsky 1, V.V. Ovcharov 1, V.I. Rudakov 1, A.G. Vasiliev 1,3 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia, 2. Moscow State Institute of Radio-engineering, Electronics and Automation, Moscow, Russia, 3. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia |
15.30 |
O1-24 |
Local performances of PZT films with a thickness less than 100 nanometers. V.M Roshchin, M.V. Silibin. Moscow Institute of Electronic Technologies (Technical University), Zelenograd, Russia |
15.50 |
O1-25 |
Polysilicon Inductive Elements for IC’s. A.M. Pashayev, F.D. Kasimov., R.A. Ibragimov. National Academy of Aviation, Baku, Azerbaijan |
16.30-17.00 Coffee break. Winter garden.
Conference Hall
Session 7. Devices and ICs
Session Chairman: Boris Konoplev,
Taganrog Institute of Technology – Southern Federal University, Russia
17.00 |
O1-26 |
SiGe and GaN heterostructure microwave devices. A.G. Vasiliev, Y.V. Kolkovsky, S.V. Korneev, A.A. Dorofeev, V.M. Minnebaev. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia |
17.20 |
O1-27 |
Methods of cache memory optimization for multimedia applications. A. Kravtsov. JSC Mikron, Moskow, Zelenograd, Russia |
17.40 |
O1-28 |
Integrated Injection Laser with Amplitude Modulation in Terahertz Band. B. Konoplev1,2, E. Ryndin2, M. Denisenko1. 1. Taganrog Institute of Technology – Southern Federal University, Taganrog, Russia, 2. Southern Scientific Center of Russian Academy of Sciences, Rostov-on-Don, Russia |
18.00 |
O1-29 |
Gas medium influence on characteristics stability of electroformed structures Si-SiO2-W and reliability of switching processes of memory elements on the basis of these structures. V.M. Mordvintsev, S.E. Kudryavtsev, V.L. Levin, L.A. Tsvetkova. Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Russia |
18.20 |
O1-30 |
Low-resistance Ge/Au/Ni/Ti/Au based ohmic contact to n-GaAs. E. Erofeev1, V. Kagadei2. 1. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia, 2. Research and production company “Micran”, Tomsk, Russia |
Auditorium A
Session 8. Superconducting Structures and Devices II
Session Chairman: Mikhail Kupriyanov, Institute of Nuclear Physics, Moscow State University, Russia.
17.00 |
O1-31 |
Manipulating superconductivity with magnetism: from unconventional physical effects to cryogenic spintronics. L.R. Tagirov. Solid State Physics Department, Kazan State University, Kazan, Russia |
17.20 |
O1-32 |
Magnetic field-tuned superconductor-insulator transition in PbTe/PbS heterostructures with superconducting interface. O. Yuzephovich1,2, S. Bengus1,2, M. Mikhailov1, A. Sipatov3, E. Buchstab4, N. Fogel4 1. Institute for Low Temperature Physics and Engineering, Kharkov, Ukraine, 2. International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland 3. National Technical University “Kharkov Polytechnical Institute” Kharkov, Ukraine 4. Solid State Institute, Technion, Haifa, Israel |
17.40 |
O1-33 |
Could equilibrium noise be detected with help of series-connected asymmetric superconducting rings? V.L. Gurtovoi, A.I. Ilin, A.V. Nikulov, V.A. Tulin. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia |
18.00 |
O1-34 |
Superconductivity of polymers with charge injection doping. A.N. Ionov1, R. Rentzsch2. 1. A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia, 2. Institut fur Experimentalphysik, Freie Universitat Berlin, Berlin, Germany |
Auditorium B
Session 9. Photonics and Optoelectronics II
Session Chairman: Sergey Nikitov, Institute of Radioengineering and Electronics RAS, Russia
17.00 |
O1-35 |
CMOS color image sensors. Current state and aspects. V.A. Gergel1, I.V. Vanyushin2 . 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia.2. LCC “SensorIС”, Moscow, Russia |
17.20 |
O1-36 |
Monolithic photodetector 32×32. A.V. Sorochkin, M.V. Yakushev, S.A. Dvoretsky, A.I. Kozlov, I.V. Sabinina, Y.G. Sidorov, B.I. Fomin, A.L. Aseev. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia |
17.40 |
O1-37 |
Improvement of Radiation Resistance of Multijunction Solar Cells by Application of Bragg Reflectors. V. Emelyanov, N. Kaluzhniy, S. Mintairov, M. Shvarts, V. Lantratov. Ioffe Physico-Technical Institute of RAS, St.-Petersburg, Russia |
18.00 |
O1-38 |
Polycrystalline Silicon Short Wave Photodetectors. F.D. Kasimov., N.G. Javadov. National Academy of Aviation, Baku, Azerbaijan |
19.00 Dinner
Wednesday, October 7th 2009
8.15 Breakfast
Conference hall
Plenary Session II. Quantum Informatics
Session Chairman: K.A.Valiev, Institute of Physics and Technology, RAS, Russia
8.50 |
|
Introductory Remarks: Quantum informatics and complex systems. Yu.I. Ozhigov. M.V. Lomonosov Moscow State University, Russia |
9.00 |
qL-01 |
INVITED: Quantum Mechanics as Emergent Phenomenon. A. Khrennikov. International center for mathematical modeling in physics, engineering and cognitive science, University of Vaxjo, Sweden |
9.30 |
qL-02 |
INVITED: Dynamical Decoupling Pushed to the Extreme. V.M. Akulin. Laboratoire Aime Cotton CNRS ,Orsay, France |
10.00 |
qL-03 |
INVITED: Tunneling without tunneling: wavefunction reduction in a mesoscopic qubit. J.A. Nesteroff and D. V. Averin. Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, USA |
10.30 |
qL-04 |
INVITED: Superconducting Qubits. E. Il’ichev. Institute of Photonic Technology, Jena, Germany |
11.00 Coffee break
Conference Hall
Session 10. Carbon Nanostructures
Session Chairman: Anatoly Vyatkin, Institute of Microelectronics Technologies, RAS, Russia
11.20 |
L2-01 |
INVITED: Carbon nanostructures as new material for emission electronics. Yu. V. Gulyaev. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia |
12.00 |
O2-01 |
Linear-chain carbon films for micro- and nanoelectronics. N.D. Novikov, A.F. Alexandrov, M.B. Guseva, V.V. Khvostov, N.F. Savchenko, Yu.V. Korneeva. Physics Department, M.V. Lomonosov Moscow State University, Moscow, Russia |
12.20 |
O2-02 |
Fabrication of device structures from single-walled carbon nanotubes selectively grown on patterned catalytic layers. O.V. Kononenko 1 , V.N. Matveev 1 , Yu.A. Kasumov1, I.I. Khodos1, D.V. Matveev2, V.T. Volkov1, A.I. Il’in1, M.A. Knyazev1 1. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia. 2. Institute of Solid State Physics Russian Academy of Sciences, Chernogolovka, Russia |
12.40 |
O2-03 |
CNS catalyst growth from carbonaceous substrate. E. Ilyichev, V. Inkin, D. Migunov, G. Petruhin, E. Poltoratskii, G. Rychkov, D. Shkodin. FSUE “Res. Inst. of Phys. Problems named after F.V. Lukin”, Zelenograd |
Auditorium A
Session 11. Quantum Informatics II
Session Chairman: Yuri Ozhigov, M.V.Lomonosov Moscow State University, Russia
11.20 |
q2-01 |
Simulation of entangled nuclei in two-atom association. B. Aksenov, Yu. Ozhigov. Lomonosov Moscow State University, Russia |
11.40 |
q2-02 |
Could the Schrodinger’s Cat be used as Quantum Bit? V.V. Aristov, A.V. Nikulov.Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia |
12.00 |
q2-03 |
Unified Statistical Method for Tomography of Quantum States by Purification. Yu.I. Bogdanov. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia |
12.20 |
q2-04 |
Information aspects of «which way» experiments with microparticles. Yu.I. Bogdanov1, K.A. Valiev1, S.A. Nuyanzin2, A.K. Gavrichenko1. 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia, 2. Moscow Institute of Electronic Technology (Technical University),Zelenograd, Russia |
12.40 |
q2-05 |
Simulation of electron jumps in the collision of two hydrogen atoms. K. Burtniy1, Yu. Ozhigov1,2. 1. Institute of Physics and Technology, RAS, Moscow, Russia 2. M.V. Lomonosov Moscow State University, Russia |
13.00 Lunch
Conference hall
Session 12. Ion and Plasma Processing
Session Chairman: Alexander Efremov, Ivanovo State University of Chemistry & Technology, Russia.
14.00 |
L2-02 |
INVITED: Evolution of Ion Implantation Technology Towards sub-45 nm Device Fabrication. S. I. Kondratenko, R. N. Reece, M. S. Ameen, M. A. Harris, and L. M. Rubin. Axcelis Technologies, 108 Cherry Hill Drive, Beverly, MA 01915 USA |
14.30 |
L2-03 |
INVITED: Challenges and future prospects in plasma etching processes. O. Joubert1, E. Pargon1, T. Chevolleau1, G. Cunge1, L. Vallier1, T. David2, S. Barnola2, T. Lill3. 1. LTM (CNRS-UJF-INPG), France 2. CEA-LETI, France. 3. Applied Materials Inc., Santa Clara, USA |
15.00 |
O2-04 |
The metal hard-mask approach for contact patterning. J.-F. de Marneffe, D. Goossens, D. Shamiryan, F. Lazzarino, Th. Conard, I. Hoflijk, H. Struyf and W. Boullart. IMEC v.z.w., Leuven, Belgium. |
15.20 |
O2-05 |
Impact of plasma exposure on organic low-k materials. E. Smirnov1,2, A. K. Ferchichi1, C. Huffman1, M. R. Baklanov1. 1. IMEC vzw, Heverlee, Belgium, 2. Moscow Institute of Electronic Technology, Moscow, Russia |
15.40 |
O2-06 |
Application of Langmuir probe technique in depositing plasmas for monitoring of etch process robustness and for end-point detection. A.V. Miakonkikh, K.V. Rudenko. Institute of Physics and Technology of RAS , Moscow, Russia. |
Auditorium A
Session 13. Quantum Informatics III
Session Chairman: A. Tsukanov, Institute of Physics and Technology, RAS, Russia
14.00 |
qL-05 |
INVITED: Quantum Measurement of Open Systems. L. Fedichkin. Michigan State University, East Lansing, USA |
14.30 |
q2-06 |
Quantum Entanglement and its Observation at Measurement of Magnetic Succeptibility and in Multiple Quantum NMR Experiments. E.B. Fel’dman. Institute of Problems of Chemical Physics of Russian Academy of Sciences, Chernogolovka, Moscow Region |
14.50 |
q2-07 |
The qubit states decoherence in antiferromagnet-based nuclear spin model of quantum register. A.A. Kokin1, V.A. Kokin2. 1. Institute of Physics and Technology of RAS , Moscow, Russia 2. Institute of Radioengineering and Electronics of RAS, Moscow Russia |
15.10 |
q2-08 |
Quantum Double Helix. A.Yu. Okulov. General Physics Institute of Russian Academy of Sciences, Moscow, Russia |
15.30 |
q2-09 |
Time-optimal control of quantum dynamics of a quadrupole nucleus by NMR techniques. V.P. Shauro, V.E. Zobov. L.V.Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russia |
15.50 |
q2-10 |
Resonant dipole-dipole interaction of a few cold Rydberg atoms in a magneto-optical trap. D.B. Tretyakov1, I.I. Beterov1, V.M. Entin1, I.I. Ryabtsev1, P.L. Chapovsky2 1. Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia, 2. Institute of Automation and Electrometry SB RAS, Novosibirsk, Russia |
Auditorium B
Session 14. Simulation and Modeling II
Session Chairman: Tariel Makhviladze, Institute of Physics &Technology RAS, Russia
14.00 |
O2-07 |
Mathematical modeling of a fast neutrals beam source neutralization channel. A.V. Degtyarev, V.P. Kudrya, Yu.P. Maishev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia |
14.20 |
O2-08 |
TCAD technique to simulate total dose effects in SOI MOSFETs. K. Petrosjanc, I. Kharitonov, E. Orekhov. Moscow State Institute of Electronics and Mathematics (Technical University), Moscow, Russia |
14.40 |
O2-09 |
Optimization of near-surficial annealing for decreasing of depth of p-n-junction in semiconductor heterostructure. E.L. Pankratov. The Mathematical Department, Nizhny Novgorod State University of Architecture and Civil Engineering,, Nizhny Novgorod, Russia |
15.00 |
O2-10 |
Research of current injection process in to the substrate during digital gate switching. T. Krupkina, D. Rodionov. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia |
15.20 |
O2-11 |
Extrinsic Compact MOSFET Model with Correct Account of Positive Differential Conductivity after Saturation. V.O. Turin1, A.V. Sedov1, G.I. Zebrev2, B. Iniguez3,M.S. Shur4 1. Orel State Technical University, Orel, Russia, 2. National Research Nuclear University “MEPHI”, Moscow, Russia, 3. Rovira i Virgili University, Tarragona, Spain, 4. Rensselaer Polytechnic Institute, Troy, NY, USA |
15.40 |
O2-12 |
Informational charge readout dynamics and non-linearity of photosignal characteristics of active pixels in CMOS image sensors. A.V. Verhovtseva, V.A. Gergel’, V.A. Zimoglyad. LLC RPC «SensorIS», Moscow, Russia |
16.10 Coffee break
16.30 Entresol. POSTER SESSION I
16.30. Bottom hall. EXHIBITION
17.00. Conference Hall. Presentations of Hi-Tech Companies
17.00 |
S-05 |
Surface Metrology measurements; from nanometer to millimeter scale. P. Markus. Veeco Instruments Inc., USA |
17.30 |
S-06 |
Advances in Cryofree Ultra-Low-Temperatures and integrated high magnetic fields. S. Mitchinson. Oxford Instruments Nanosciences Ltd., UK |
19.00 Dinner
Thursday, October 8th 2009
08.15 Breakfast
Conference hall
Session 15. Nanostructures Fabrication Techniques
Session Chairman: Anatoly Vyatkin, Institute of Microelectronics Technologies, RAS, Russia
09.00 |
О3-01 |
Nucleation and growth of Ge nanoislands on pit-patterned Si substrates. J.V. Smagina1, P.L. Novikov1, A.S. Deryabin1, E.E. Rodyakina, D.A. Nasimov1, B.I. Fomin1, V.A. Zinovyev1, A.V. Dvurechenskii1,2 . 1. Institute of Semiconductor Physics SB RA , Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia. |
09.20 |
O3-02 |
Nanoscale Si/SiO2 superlattices produced by plasma-chemical technology. S.A. Arzhannikova1,2, M.D. Efremov1,2, A.Kh. Antonenko1,2, V.A. Volodin1,2, G.N. Kamaev1,2, D.V. Marin1,2, S.A. Kochubei1, A.A. Voschenkov1 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia |
09.40 |
O3-03 |
Impurity activation and nanocrystals formation using excimer lasers. M.D. Efremov1,2, S.A. Arzhannikova1,2, V.A. Volodin1,2, G.N. Kamaev1,2, S.A. Kochubei1, I.G. Neizvestny1. 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia |
10.00 |
O3-04 |
Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. V.A. Volodin1,2, T.T. Korchagina1, G.N. Kamaev1, A.H. Antonenko1, J. Koch3, B.N. Chichkov3. 1. Institute of Semiconductor Physics, Russian Academy of Sciences, , Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia. 3. Laser Zentrum Hannover, Hannover, Germany |
10.20 |
O3-05 |
Optical diagnostics of GaAs nanoheterostructures growth processes. I.P. Kazakov, E.V. Glazyrin, V.I. Tsekhosh. P.N. Lebedev Physical Institute of Russian Academy of Sciences, Moscow, Russia |
10.40 |
O3-06 |
Low voltage micro lens ion beam column for nano-patterning with resolution of 1.5?2 nm. Numerical simulation and prospects. V.A. Zhukov1, S. Kalbitzer2, A. I. Titov3 1. Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia, 2. Ion Beam Technology, D-69121 Heidelberg, Germany, 3. St. Petersburg State Technical University, St. Petersburg, Russia |
Auditorium A
Session 16. Quantum Informatics IV
Session Chairman: Yu.I.Bogdanov, Institute of Physics and Technology, RAS, Russia
09.00 |
q3-01 |
Quantum computer without uncontrollable Coulomb interaction among space-based qubits. S. Filippov, V. Vyurkov. Institute of Physics and Technology, RAS, Moscow, Russia |
09.20 |
q3-02 |
Quantum information transfer protocol via optimized single-electron transport in semiconductor nanostructure. A.V. Tsukanov. Institute of Physics and Technology, RAS, Moscow, Russia |
09.40 |
q3-03 |
Outlook for the application of Ge/Si quantum dots in quantum calculations. A. Zinovieva1, A. Nenashev1, A. Dvurechenskii1, A.I. Nikiforov1, A. Lyubin1, L. Kulik2. 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Institute of Chemical Kinetics and Combustion, Novosibirsk, Russian Academy of Sciences Russia |
10.00 |
q3-04 |
The quantum dynamics of two coupled large spins. V.E. Zobov. L.V. Kirensky Institute of Physics, SB Russian Academy of Sciences,Krasnoyarsk, Russia |
10.20 |
q3-05 |
Can entanglement fluctuate? M. A. Yurishchev. Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Russia |
Auditorium B
Session 17. Simulation and Modeling III
Session Chairman: Igor Abramov, Belarusian State University of Informatics & Radioelectronics, Belarus
9.00 |
O3-07 |
The influence of the suboxide layer structure on equivalent oxide thickness in nanoscale MIS-structure. N.A. Zaitsev, G.Ya Krasnikov, Matyushkin I.V. Micron Corp., Moscow, Zelenograd, Russia |
9.20 |
O3-08 |
Semi-analytical model of a field-effect transistor with an ultra-thin channel. A. Khomyakov, V. Vyurkov. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia |
9.40 |
O3-09 |
Impact of channel inhomogeneities on characteristics of a quantum field-effect transistor. V. Vyurkov, I. Semenikhin, V. Lukichev, A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia |
10.00 |
O3-10 |
Bulk and Nanoribbon Graphene Field-Effect Transistor Modeling. G.I. Zebrev1, E.A. Zotkin1, А.А. Tselykovskiy1, E.V. Melnik1, V.O. Turin2 . 1. Micro- and Nanoelectronics Department, National Research Nuclear University “MEPHI”, Moscow, Russia, 2. Orel State Technical University, Orel, Russia |
10.20 |
O3-11 |
Electron optical spin polarization in broken-gap heterostructures. A. Zakharova1, K. A. Chao2, I. Semenikhin1. 1. Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia, 2. Department of Physics, Lund University, Lund, Sweden, and Department of Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden |
11.00 Coffee break
Conference hall
Session 18. Magnetic Micro- and Nanostructures
Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS, Russia
11.30 |
O3-12 |
High-temperature magnetization and Mossbauer spectra of nanoparticles in a weak magnetic field. M. A. Chuev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. |
11.50 |
O3-13 |
Mossbauer study of nanomagnetics. V.I. Bachurin1, I.N. Zakharova1, M.A. Shipilin2, A.M. Shipilin3 . 1. Yaroslavl State Technical University, Yaroslavl, Russia, 2. P.G.Demidov Yaroslavl State University, Yaroslavl, Russia, 3. M.V. Lomonosov Moscow State University, Moscow, Russia |
12.10 |
O3-14 |
Ferromagnetic resonance and magnetoelastic demodulation in giant magnetostriction TbCo2/FeCo nanostructured thin film. A. Klimov1,2, Yu. Ignatov2, S. Nikitov2, N. Tiercelin1, V. Preobrazhensky1,3, P. Pernod1. 1. LEMAC–IEMN CNRS, Ecole Centrale de Lille, France 2. Kotel’nikov Institute of Radioengineering and Electronics (IRE RAS),Moscow, Russia 3. Wave Research Center, A.M. Prokhorov General Physics Institute RAS, Moscow, Russia |
12.30 |
O3-15 |
Odd-even effects in magnetic nanostructures. V.V. Kostyuchenko. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl, Russia |
12.50 |
O3-16 |
Magnetoresistance of multilayer ferromagnetic nanoparticles. S.N. Vdovichev, A.A. Fraerman, B.A. Gribkov, S.A. Gusev, A.Yu. Klimov, V.L. Mironov, V.V. Rogov. Institute for Physics of Microstructures, Russian Academy of Science, Nizhniy Novgorod, Russia |
Auditorium A
Session 19. Quantum Informatics V
Session Chairman: Yuri Ozhigov, M.V.Lomonosov Moscow State University, Russia
11.30 |
q3-06 |
Quantum cryptography system using phase-time coding and resistant to PNS attack. D.A. Kronberg1 , S.N. Molotkov1,2,3 1. Faculty of Computational Mathematics and Cybernetics, Moscow State University, Moscow, Russia 2. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia. 3. Academy of Cryptography of the Russian Federation, Moscow, Russia |
11.50 |
q3-07 |
Entanglement measure for multipartite pure states and its numerical calculation. A. Yu. Chernyavskiy. Institute of Physics & Technology of RAS (FTIAN), Moscow, Russia |
12.10 |
q3-08 |
Quantum Computing with Collective Ensembles of Multilevel Systems. E. Brion, K. Molmer, and M. Saffman. Laboratoire Aime Cotton (CNRS), Orsay, France |
12.30 |
q3-09 |
Spin-1/2 systems with simple two- and three-dimensional geometrical configurations: state transfer and entanglement between different nodes. S.I. Doronin, E.B. Fel’dman and A.I. Zenchuk Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow reg., Russia |
12.50 |
q3-10 |
Flux-qubit and the law of angular momentum conservation. A.V. Nikulov. Institute of Microelectronics Technology, Russian Academy of Sciences,Chernogolovka, Moscow District, Russia. |
Auditorium B
Session 20. Micro- and Nanostructures Characterization I
Session Chairman: Eduard Rau, Moscow State University, Moscow, Russia
11.30 |
O3-17 |
SEM Probe Defocusing Method of Measurement of Linear Sizes of Nanorelief Elements. M.N. Filippov1, Yu.A. Novikov2, A.V. Rakov3, P.A. Todua3. 1. N.S. Kurnakov General and Inorganic Chemistry Institute of the Russian Academy of Sciences, Moscow, Russia, 2. A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia. 3. Center for Surface and Vacuum Research, Moscow, Russia |
11.50 |
O3-18 |
SEM Relief Structure Images with Trapezoid Profile and Big Inclination Angle of Side Walls in Back Scattered Electrons. M.N. Filippov1, Yu.A. Novikov2, A.V. Rakov3, P.A. Todua3. 1. N.S. Kurnakov General and Inorganic Chemistry Institute of the Russian Academy of Sciences, Moscow, Russia, 2. A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia. 3. Center for Surface and Vacuum Research, Moscow, Russia |
12.10 |
O3-19 |
Combined electron-beam method of the diagnostic of microelectronic structures in scanning electron microscopy. F.A. Lukyanov1 , N.A. Orlikovsky2 , E.I. Rau3 , R.A. Sennov3. 1. Moscow State University, Moscow, Russia 2. Institute of Physic and Technology RAS, Moscow, Russia. 3. Institute of Microelectronics Technology RAS, Chernogolovka, Moscow Region, Russia |
12.30 |
O3-20 |
Problems of AFM-investigations of open sandwich MIM-structures. E.S. Gorlachev, V.M. Mordvintsev, V.L. Levin. Yaroslavl Branch of the Institute of Physics and Technology RAS, Yaroslavl, Russia |
12.50 |
O3-21 |
Correct measurements of capacity using atomic force microscope. A.A. Chouprik, A.S. Baturin. Moscow Institute of Physics and Technology, Dolgoprudny, Russia |
13.20 Lunch
Conference hall
Session 21. Plasma Physics and Technologies
Session Chairman: Konstantin Rudenko, Institute of Physics &Technology RAS, Russia
14.20 |
L3-01 |
INVITED: Problems of nano-sized and high aspect ratio features plasma etching. V. Lukichev1, K. Rudenko1, A. Orlikovsky1, V. Yunkin2. 1. Institute of Physics & Technology (FTIAN) 2. Institute of Microelectronics Technology,Russian Academy of Sciences, Russia |
14.50 |
O3-22 |
Modeling of plasma reactive ion etching of ultra high aspect ratio Si trenches. I.I.Amirov1, A.S.Shumilov1, A.N.Kupriynov1, V.F.Lukichev2 . 1. Institute RAS Yaroslavl branch of the Institute of Physics & Technology RAS, Yaroslavl, Russia, 2. Institute of Physics & Technology (FTIAN), Russian Academy of Sciences, Moscow, Russia |
15.10 |
O3-23 |
Plasma parameters and active particles kinetics in HBr dc glow discharges. A. Smirnov1,2, A. Efremov1, V. Svettsov1, A. Islyaykin2. 1. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia, 2. Mikron JSC, Zelenograd, Moscow, Russia |
15.30 |
O3-24 |
Mechanisms of film deposition from BCl3-based plasma during dry etching. D. Shamiryan1 , A.M. Efremov2 , V. Serlenga3 , M.R. Baklanov1, W. Boullart1. 1. IMEC, Leuven, Belgium 2. Ivanovo State University of Chemistry and Technology, Ivanovo, Russia 3. Instituto Universitario di Studi Superiori, Pavia, Italy |
15.50 |
O3-25 |
Excitation Mechanism of the B+ Emission Line at 345.1 nm in Low-Temperature Plasma. V.P. Kudrya. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia |
Auditorium A
Session 22. Quantum Informatics VI
Session Chairman: Yuri Ozhigov, M.V.Lomonosov Moscow State University, Russia
14.20 |
q3-11 |
Implementation of the quantum order-finding algorithm by adiabatic evolution of two qubits. A.S. Ermilov, V.E. Zobov. L. V. Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, 660036, Krasnoyarsk, Russia |
14.40 |
q3-12 |
NMR Saturation and Entanglement in Solids. M. Kutcherov. Siberian Federal University, Krasnoyarsk, Russia |
15.00 |
q3-13 |
Quantum Scattering on Dypole Potential in Adiabatic Approximation. K.S. Arakelov. M.V.Lomonosov Moscow State University, Russia |
15.20 |
16.20 |
Round Table Discussion: Quantum Systems in Computer Simulation |
Auditorium B
Session 23. Micro- and Nanostructures Characterization II
Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS, Russia
14.20 |
O3-26 |
De-processing technologies for modern VLSI based on grazing incident ion beams. A.F. Vyatkin. Institute of Microelectronics Technologies, Russian Academy of Sciences, Chernogolovka, Russia |
14.40 |
O3-27 |
Development of computer methods for multi nano-layer parameters measurements by X-Ray reflectometry. N.N. Gerasimenko1, D.A. Kartashov2, A.G. Turyansky3 . 1. Moscow Institute of Electronic Technology, Moscow, Zelenograd, Russia, 2. JSC Mikron, Moscow, Zelenograd, Russia, 3.LPI, Moscow, Russia |
15.00 |
O3-28 |
Experimental scheme for observation of anomalous Kossel effect in semiconductor structures. P.G. Medvedev, M.A. Chuev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia |
15.20 |
O3-29 |
Structural Investigation of Magnetic Digital Alloys. I.A. Subbotin1, M.A. Chuev2, V.V. Kvardakov1, I.A. Likhachev1, E.M. Pashaev1. 1. Russian Research Center “Kurchatov Institute”, Moscow, Russia. 2. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia |
15.40 |
O3-30 |
Spectroscopic and scanning ellipsometry for investigation of surfaces, thin films and nanolayers. V. Tolmachev1, T. Zvonareva1, L. Portzel1, V. Kudoyarova1, T. Perova2, V. Shvets3, S. Rykhlitskii3 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia 2. Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland, 3. Semiconductor Physics Institute SB RAS, Novosibirsk, Russia |
16.00 |
O3-31 |
Temperature of one-side polished silicon wafer at different position relatively incoherent radiance source. V.I. Rudakov, V.V. Ovcharov, V.P. Prigara. Yaroslavl Branch of Institute of Physics and Technology RAS |
16.30 Coffee break
16.45 Entresol. POSTER SESSION II
Bottom hall. EXHIBITION
18.45. Conference Hall. CLOSING CONFERENCE REMARKS
А.А. Orlikovsky, Chair of Organizing Committee ICMNE-2009,
Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia
19.30 BANQUET
Friday, October 9th, 2009
09.00 Breakfast
10.00 DEPARTURE