P1-01

A universal model for single-electron device simulation. I.I. Abramov, A.L. Baranoff, I.A. Romanova, I.Y. Shcherbakova. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus .

P1-02

Monte Carlo simulation of charge carrier transport in deep submicron Si MOSFET . A.V. Borzdov¹, V.M. Borzdov¹, D.V. Pozdnyakov¹, D.S. Speransky¹, V.V. V’yurkov ², A.A. Orlikovsky² . 1. Belarusian State University, Minsk, Belarus. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

P1-03

Thermal simulating of thin-film SOI MOSFET . Yu. Chaplygin, А . Krasukov, E. Artamonova . National Research University of Electronic Technology (MIET) Moscow, Russia .

P1-04

Ultimate sub-threshold slope of Schottky barrier field-effect transistors. Ye. Chaplygin, D. Svintsov, V. Vyurkov, A. Orlikovsky. Institute of Physics and Technology, RAS, Moscow, Russia .

P1-05

Transient processes in the resonant tunneling diode, taking into account the electron-electron interaction . V. Elesin¹, I. Kateyev², A. Sukochev¹ . 1. National Research Nuclear University, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

P1-06

Effect of emitter spacer level of resonant tunneling diode on I-V curves. V. Elesin, M. Remnev . National Nuclear Research University “MEPhI”, Moscow, Russia .

P1-07

Gold nanoparticle single-electron transistor simulation . Y.S. Gerasimov, V.V. Shorokhov, E.S. Soldatov, O.V. Snigirev . Faculty of Physics, Moscow State University, Moscow, Russia .

P1-08

TCAD analysis of self heating effects in bulk silicon and SOI n-MOSFETs . K. Petrosyants¹, E. Orekhov², I. Kharitonov¹, D. Popov¹ . 1. Moscow State Institute of Electronics and Mathematics (Technical University), Moscow, Russia. 2. Institute for Design Problems in Microelectronics, RAS, Zelenograd, Moscow, Russia .

P1-09

Terahertz oscillations from nanowires . A. Pilgun¹, V. Vyurkov¹, L. Fedichkin^1,2, V. Borzdov³, A. Orlikovsky¹ . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Computer company NIX, Moscow, Russia. 3. Belarusian State University, Mink, Belarusia .

P1-10

Modeling low-volt nanometer merged MOS devices. V. Rakitin. Scientihic Research Institute of Physical Problems, Moscow, Russia .

P1-11

Nonlinear model of an LDMOS transistor for an RF power amplifier with output power 30 Watt in the frequency range 1.20 – 1.32 GHz. E.M. Savchenko^1,2, A.S. Budyakov^1,3, A.D. Pershin^1,2, S.M. Romanovsky¹ . 1. FSUE “S&PE “Pulsar”, Moscow , Russia. 2. MSTU MIREA, Moscow. 3. N.E. Bauman MSTU, Moscow, Russia .

P1-12

Modeling of the silicon complementary bipolar technology process with germanium implantation. E.M. Savchenko^1,2, D.G. Drozdov¹. 1. FSUE “S&PE “Pulsar”, Moscow, Russia. 2. MSTU MIREA, Moscow, Russia .

P1-13

Tunnel graphene field-effect transistor . D. Svintsov¹, V. Vyurkov¹, A. Burenkov², R. Oechsner², V. Lukichev¹, A. Orlikovsky¹ . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen, Germany .

P1-14

Numerical model of parallel nano-FET on Coulomb blockade in M₅₅ “magic” crystals . V.A. Zhukov¹, V.G. Maslov², N.T. Bagraev³ . 1. St. Petersburg Institute of Information Science and Automation, RAS, St. Petersburg, Russia. 2. St. Petersburg National Research University of Information Technologies, Mechanics and Optics , St. Petersburg, Russia, 3. Ioffe Physical Technical Institute, RAS, St. Petersburg, Russia .

P1-15

A model to describe the hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles. V. Stuchinsky, G. Kamaev, M. Efremov, S. Arzhannikova. Institute of Semiconductor Physics, RAS, Novosibirsk, Russia .

P1-16

MCT photodiodes spectral response. K.O. Boltar^1,2, A.V. Nikonov^1,2, N.I. Iakovleva¹. 1. State Scientific Center of Russian Federation “RD&P Center ORION”, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Moscow, Russia .

P1-17

Numerical calculations of the concentration profile for InGaAs/GaAs heterostructures with δ-doping layers . S.V. Khazanova, V.E. Degtyarev. Lobachevskiy Nizhnii Novgorod University, Nizhni Novgorod, Russia .

P1-18

Changing of magnetic properties in magneto-photonic crystals by light influence . D.E. Afanas’eva¹, A.N. Kuprianov², A.V. Paporkov¹, A.V. Prokaznikov^1,2 . 1. Yaroslavl State University, Institute of Semiconductor Physics, Yaroslavl, Russia. 2. Yaroslavl Branch of the Institute of Physics and Technology, Russia .

P1-19

Comparative study of ultrathin Co films grown by ion-plasma and magnetron sputtering. V.F. Bochkarev¹, O.S. Trushin¹, V.V. Naumov¹, S.V. Vasiliev², and V.A. Paporkov ² . 1. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia. 2. Yaroslavl State University, Yaroslavl, Russia .

P1-20

Fabrication of epitaxial tunnel magnetic junctions Fe/MgO/Fe(001) using pulse laser deposition . A. Chernikh, V. Vinnechenko, L. Fomin, I. Malikov, and G. Mikhailov . Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia .

P1-21

Experimental observation and simulation of a spin-polarized current effect on magnetic structure of epitaxial Fe (001) quadratic microstructures . L.A. Fomin, I.V. Malikov, K.M. Kalach, S.V. Pyatkin, G.M. Mikhailov . Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia .

P1-22

Size and magnetic anisotropy effect of micromagnetic states in rectangular epitaxial Fe (011) microstructures . L.A. Fomin, I.V. Malikov, S.V. Pyatkin, G.M. Mikhailov. Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia.

P1-23

Epitaxial film growth for Fe₃O₄/MgO/Fe (001) tunnel magnetic junctions fabrication . I.V. Malikov, V.Yu. Vinnichenko, L.A. Fomin, G.M. Mikhailov. Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia.

P1-24

Development technology of creation sensor nanomaterials based on ZnO . O.A. Ageev, E.G Zamburg, Z.E. Vakulov, A.V. Shumov, D.E. Vakulov, M.N. Ivonin, V.V. Ptashnik . Taganrog Institute of Technology, Sothern Federal University, Taganrog, Russia .

P1-25

Specificity of the synthesis of carbon nanotubes using the combined catalyst . S. Basaev, V.A. Galperin, A.A. Pavlov, Yu.P. Shaman, A.A. Shamanaev. Scientific-Manufacturing Complex “Technological Centre”, Moscow, Russia .

P1-26

Method of fabricating nanopores in silicon wafer via P⁺ and O₂⁺ co-implantation and non-isothermal annealing. Yu.I. Denisenko. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .

P1-27

Investigation of dependence of morphology and fractal characteristics of porous silicon on anodizing conditions. D. Gaev¹, A. Boyko², S. Timoshenkov². 1. Kabardino-Balkarian State University, Nalchik, Russia. 2. National Research University of Electronic Technology, Moscow, Russia .

P1-28

The study of water s uspensions of nanomaterials containing c arbon nanotubes . L.P. Ichkitidze ¹ , S.V. Selishchev¹, E.V. Blagov², V.A. Galperin³, Y.P. Shaman³, L.V. Tabulina ⁴, B.G. Shulitski⁴ . 1. National Research University of Electronic Technology “MIET” , MIET, Zelenograd, Moscow, Russia. 2. Institute of Nanotechnology of Microelectronics, RAS, Moscow, Russia. 3. Scientific-Manufacturing Complex “Technological Centre”, MIET, Zelenograd, Moscow, Russia. 4. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus .

P1-29

Features of nanostructures formed in solid substrates . E. Il’ichev, A. Kozlitin, D. Migunov, O. Sakharov, A. Trifonov, G. Petruchin, G. Richkov . Scientific Research Institute of Physical Problems named after F.V. Lukin, Moscow, Russia .

P1-30

Carbon nanotubes-silicon composite material as anode structure in lithium batteries . E.P. Kitsyuk¹, V.A. Galperin¹, Y.P. Shaman¹, D.G. Gromov², A.M. Skundin³, E.K. Tuseeva³ . 1. Scientific-M anufacturing Complex “Technological Centre”, Moscow, Russia. 2. National Research University of Electronic Technology, Moscow, Russia. 3. A.N. Frumkin Institute of Physical Chemistry and Electrochemistry RAS, Moscow, Russia .

P1-31

Formation of nanoelectrodes for high temperature single-electron sensors . A. Parshintsev , E. Soldatov . Department of Physics, Moscow State University, Moscow, Russia .

P1-32

Research of resolution of masking layers of the molybdenum structured on technologies of laser thermochemical record . S. Poletaev^1,2, O. Moiseev² . 1. S.P. Korolyov Samara State Aerospace University (National Research University), Samara, Russia. 2. Image Processing Systems Institute, RAS, Samara, Russia .

P1-33

Formation of CNT ordered array, as source of electrons. A. Shuliatyev , D. Gromov, A. Zaycev, A. Shamanaev . National Research University of Electronic Technology, Zelenograd, Russia .

P1-34

Fabrication of integrated electrodes of molecular transistor electrodes by lithographic techniques and electromigration. A.S. Stepanov ¹ , E.S. Soldatov², O.V. Snigirev² . 1. Skobeltsyn Institute of Nuclear Physics, M.V. Lomonosov Moscow State University, Moscow, Russia. 2. Department of Physics, M.V. Lomonosov Moscow State University, Moscow, Russia .

P1-35

Narrowing of nanogaps for purpose of molecular single-electronics. I.V. Sapkov, E.S. Soldatov . Department of Physics, Moscow State University, Russia.

P1-36

Electron Multiplier on Diamond-Coated Silicon Membrane . E.A. Il’ichev, A.E. Kuleshov, N.K. Metveeva, G.N. Petrukhin, R.M. Nabiev, G.S. Rychkov. F.V. Lukin State Research Institute of Physical Problems, Zelenograd, Russia.

P1-37

Mechanism of sensitivity of a three-collector magnetotransistor . V.V. Amelichev, A.A. Cheremisinov, S.A. Polomoshnov, R.D. Tikhonov. SMC “Technological Centre” MIET.

P1-38

The observation of conduction quantization of metallic nanojunctions at normal conditions . L. Fedichkin^1,2,3, A. Borisov², M. Chernyshev², V. Rubaev². 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. NIX, Moscow, Russia .

P1-39

The novel THz generation and detection possibilities of resonant-tunneling based semiconductor multiple-quantum well nanostructures . A.L. Karuzskii, V.V. Kapaev, V.N. Murzin, Yu.A. Mityagin, S.A. Savinov, A.V. Perestoronin, A.M. Tshovrebov, N.A. Volchkov, I.P. Kazakov, V.I. Egorkin, S.S. Shmelev . P.N. Lebedev Physical Institute of RAS, Moscow, Russia.

P1-40

Suspended silicon single-electron transistor . V. Krupenin¹, D. Presnov^1,2, S. Amitonov¹, K. Rudenko³, V. Rudakov³ . 1. Laboratory of Cryoelectronics, Moscow State University, Moscow, Russia. 2. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 3. Institute of Physics and Technology, RAS, Moscow, Russia .

P1-41

Optimization of topological parameters of triode with cold cathode based on ordered array of (9, 9) carbon nanotubes with open ends .D.V. Pozdnyakov¹, A.V. Borzdov¹, V.M. Borzdov¹, V.A. Labunov².1. Belarusian State University, Minsk, Belarus. 2. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.

P1-42

Experimental and theoretical study of nanowire FET based on SOI . I.I. Soloviev¹, I.A. Devyatov ¹, P.A. Krutitskiy², S.V. Amitonov³, D.E. Presnov ³, V.A. Krupenin³ . 1. D.V. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 2. M.V. Keldish Institute of Applied Mathematics, Moscow, Russia 3. Physics Faculty, Moscow State University, Moscow, Russia .

P1-43

Instability-driven terahertz emission and injection locking behavior in an asymmetric dual-grating-gate HEMT with a vertical cavity structure . T. Watanabe, T. Fukushima, Y. Kurita, A. Satou, T. Otsuji. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.

P1-44

Formation of 3D high aspect ratio micro- and nanostructures in Si by plasma etching and thermal oxidation. I. Amirov¹, V. Lukichev², M. Izyumov¹, E. Zhikharev², V. Kal’nov². 1. Yaroslavl Branch of the Institute of Physics and Technology , RAS, Yaroslavl, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

P1-45

Kinetic characteristics of electron impact processes in BCl₃. A. Efremov, V. Plotnokov, V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia .

P1-46

Plasma emission spectra in CCl₂F₂/Ar gas mixture . D.B. Murin, V.I. Svettsov, A.M. Efremov, A.E. Leventsov. Ivanovo State University of Chemical Technology, Ivanovo, Russia .

P1-47

Poly- and nanocrystalline silicon films formed by PECVD for micro- and nanodevices. E. Gusev, R. Velichko. Taganrog Institute of Technology – Southern Federal University, Taganrog, Russia .

P1-48

Etching characteristics and mechanisms of Mo and Al₂O₃ thin films in inductively coupled Cl₂/O ₂/Ar plasmas. K.-H. Kwon¹, K. Kim¹, Y.-H. Ham¹, A. Efremov². 1. Korea University; Sogamg University. 2. Ivanovo State University of Chemistry & Technology, Russia .

P1-49

Instrumented wafer as a Langmuir multiprobe tool for lateral plasma homogeneity measurements in processing plasma reactors . A. Miakonkikh, S. Lisovsky, M. Rudenko, K. Rudenko . Institute of Physics and Technology, RAS, Moscow, Russia .

P1-50

Method of saturable absorber fabrication by PECVD of carbon nanostructures on optical fibers . A.E. Mironov, S.V. Dubkov, D.G. Gromov. National Research University of Electronic Technology, Moscow, Russia .

P1-51

Plasma molding in deep silicon reactive ion etching. O. Morozov. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl, Russia .

P1-52

Investigation of plasma etching of Si and SiO₂ through electron resist ZEP-7000. Yu. Shikolenko¹, A. Antonovich¹, D. Lapin¹, V. Lukichev^1,2. 1. MSTU MIREA, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

P1-53

Determination of alloy composition in Ge_xSi_1-x/SiO₂/Si microstructures . B.Ya. Ber, E.I. Belyakova, D.Yu. Kazanzev, L.S. Kostina, A.N.Smirnov, N.M. Shmidt . Ioffe Physical Technical Institute, RAS, Petersburg, Russia .

P1-54

Monitoring of resonant-tunneling diode growth by reflectance anisotropy spectroscopy. I.P. Kazakov. P.N. Lebedev Physical Institute RAS, Moscow, Russia .

P1-55

Quality control of SOS structures by means of surface photovoltage. S.V. Kozlov, V.M. Maslovsky. The company OJSC “Angstrem”, Zelenograd, Russia .

P1-56

Effective probe for scanning electron microscope . Yu.V. Larionov, Yu.A. Novikov. A.M. Prokhorov General Physics Institute, RAS, Moscow, Russia.

P1-57

Distortion of relief profile of a test object with nanometer sizes due to contamination in SEM. Yu.V. Larionov, Yu.A. Novikov . A.M. Prokhorov General Physics Institute, RAS, Moscow, Russia.

P1-58

An improved detection of the locally doped semiconductor regions with the scanning electron microscope . N.A. Orlikovsky¹, E.I. Rau², A.M. Tagachenkov³, I.P. Vasyuk⁴. 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Moscow State University Physical Department, Moscow, Russia. 3. Institute of Nanotechnology and Microelectronics RAS, Moscow, Russia. 4. Kharkov National University, Kharkov, Ukraine .

P1-59

The development of method for measuring of current density distribution in micro- and nanosystems. I. Rudnev, A. Podlivaev, S. Pokrovskiy, A. Menushenkov. National Nuclear Research University, “MEPHI”, Moscow, Russia .

P1-60

Determination of the content in Al_xGa_1-xAs alloys by secondary ion mass spectrometry . V.V. Saraykin¹, I.S. Vasil’evskii², A.N. Vinichenko², K.D. Scherbachev³ . 1. Scientific Research Institute of Physical Problems named after F.V.Lukin, Moscow, Russia. 2. National Research Nuclear University «MEPhI», Moscow, Russia. 3. National University of Science and Technology «MISiS», «Material science and Metallurgy» Center, Moscow, Russia .

P1-61

Atomic force microscopy for line edge roughness measurements . A. Sosnina, A. Miakonkikh, A. Rogozhin . Institute of Physics and Technology, RAS, Moscow, Russia .

P2-01

Josephson φ-device based on complex nanostructures with normal metal/ferromagnet bilayer . S.V. Bakurskiy^1,2, N.V. Klenov¹, T.Yu. Karminskaya², A.A. Golubov³, M.Yu. Kupriyanov ² . 1. Faculty of Physics, Moscow State University, Moscow, Russia. 2. Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 3. Faculty of Science and Technology, University of Twente, Enschede, Netherlands .

P2-02

Macroscopic quantum effects in transmission of signals along the superconducting microwave slotline. Towards quantum transmission lines . M.A. Dresvyannikov, A.L. Karuzskii, A.V. Perestoronin, A.M. Tshovrebov, N.A. Volchkov, L.N. Zherikhina. P.N. Lebedev Physical Institute, RAS, Moscow, Russia.

P2-03

Manifestation of long-range triplet superconducting correlations in F1-SF1F2-F1 structures. T. Karminskaya¹, M. Kupriyanov¹, A. Golubov². 1. MSU, Institute of Nuclear Physics, Moscow, Russia. 2. Institute of nanotechnology, University of Twente, Netherlands .

P2-04

Jitter in ballistic read-out circuit based on Josephson transmission line. I.I. Soloviev ^1,2 , N.V. Klenov^1,3, A.L. Pankratov¹, E.V. Il’ichev⁴, L.S. Kuzmin^1,5 . 1. Laboratory of Cryogenic Nanoelectronics, NNSTU, Russia. 2. D.V. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 3. Physics Faculty, Moscow State University, Moscow, Russia. 4. Institute of Photonic Technology, Jena, Germany 5. Chalmers University of Technology, Sweden .

P2-05

Noise in bi-SQUID. I. Soloviev ¹ , N. Klenov², A. Sharafiev², V. Kornev² . 1. Scobeltsyn Institute of Nuclear Physics, Moscow, Russia. 2. Moscow State University, Physics Department, Moscow, Russia .

P2-06

Adequacy, completeness, and accuracy of quantum measurement protocols . Yu.I. Bogdanov, A.K. Gavrichenko. Institute of Physics and Technology, RAS, Moscow, Russia.

P2-0 7

Polarization quantum operations in an anisotropic medium with dispersion . Yu . I. Bogdanov ¹ , A.A. Kalinkin ^2,3 , S.P. Kulik ⁴ , E.V. Moreva ^2,5 , V.A. Shershulin ^1,2,6 . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. International Laser Center of Moscow State University, Moscow, Russia. 3. Zavoisky Physical-Technical Institute, RAS, Kazan, Russia. 4. Faculty of Physics, Moscow State University, Moscow, Russia. 5. National Research Nuclear University “MEPHI”, Moscow, Russia. 6. National Research University of Electronic Technology MIET, Moscow, Russia .

P2-0 8

Experimental study of echo effect in polarization transformations of qubits. Yu. Bogdanov ¹ , A. Kalinkin ^2,3 , S. Kulik ⁴ , E. Moreva ^2,5 , V. Shershulin ^1,2,6 . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. International Laser Center of Moscow State University, Moscow, Russia. 3. Zavoisky Physical-Technical Institute RAS, Kazan, Russia. 4. Faculty of Physics, Moscow State University, Moscow, Russia. 5. National Research Nuclear University “MEPHI”, Moscow, Russia. 6. National Research University of Electronic Technology MIET, Moscow, Russia .

P2-09

Mathematical modeling of polarization echo in optically anisotropic media. Yu.I. Bogdanov¹, A.A. Kalinkin^2,3, S.P. Kulik⁴, E.V. Moreva^2,5, V.A. Shershulin ^1,2,6, L.V. Belinsky^1,6 . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. International Laser Center of Moscow State University, Moscow, Russia. 3. Kazan Physical-Technical Institute, RAS, Kazan Russia. 4. Faculty of Physics, Moscow State University, Moscow, Russia. 5. National Research Nuclear University “MEPHI”, Moscow, Russia. 6. National Research University of Electronic Technology MIET, Moscow, Russia .

P2-10

Quantum interferometer with compressed coherent states. A. Karuzskii¹, A. Tskhovrebov¹, V. Prijmachenko², L. Zherikhina¹. 1. P.N. Lebedev Physical Institute, RAS, Moscow, Russia. 2. Moscow Institute of Physical Engineering .

P2-11

Tradeoff analysis of b allistic detector for Josephson qubits. N.V. Klenov¹, A.V. Sharafiev¹, V.K. Kornev¹ . Physics Faculty, Moscow State University, Moscow, Russia .

P2-12

Quantum error correction in Si double dot charge qubits. A. Melnikov^1,2, L. Fedichkin^1,2,3 . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. NIX, Moscow, Russia .

P2-13

Could we believe that the moon is there? A.V. Nikulov . Institute of Microelectronics Technology, RAS, Chernogolovka, Russia .

P2-14

Measurement of charge and spin qubits in a transistor channel . M. Rudenko, V. Vyurkov, S. Filippov, A. Orlikovsky . Institute of Physics and Technology, RAS, Moscow, Russia .

P2-15

Atomic force microscopy studies of ferroelectric and electrical properties in epitaxial BaTiO₃/Pt heterostructures . A. Baturin¹, A. Chouprik¹, K. Bulakh¹, A. Kuzin¹, A. Zenkevich², M. Minnekaev² . 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 2. National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow, Russia.

P2-16

Formation of Ag clusters for resistive memory cells from thin film. A. Belov¹, D. Gromov¹, O. Pyatilova¹, O. Sakharov², A. Trifonov² . 1. National Research University of Electronic Technology MIET, Moscow, Russia. 2. Scientific Research Institute of Physical Problems named after F.V.Lukin, Moscow, Russia .

P2-1 7

Memory cells on the basis of metal-insulator-semiconductor of structure with multilayer dielectric with same nanometer layers . A.E. Berdnikov, A.A. Popov, A.A. Mironenko, V.D. Chernomordick, A.V. Perminov . Yaroslavl Branch of Institute of Physics and Technology, RAS, Yaroslavl, Russia .

P2-1 8

A resistive switching effect with memristive behavior in Hf_xAl_1-xO_y layers grown by atomic layer deposition. A.A. Chouprik¹, K.V. Egorov¹, I.P. Grigal¹, Yu.Yu. Lebedinskii², A.M. Markeev ¹, A.V. Zenkevich² . 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 2. NRNU Moscow Engineering Physics Institute, Moscow, Russia .

P2-19

Atomic layer deposition of Hf_xAl_1-xO_y dielectric layers for memory devices. I.P. Grigal ¹ , A.A. Chouprik ¹ , K.V. Egorov ¹ , Yu.Yu. Lebedinskii ² , A.M. Markeev ¹ . 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 2. NRNU Moscow Engineering Physics Institute, Moscow, Russia .

P2-20

Influence of heating on electrical properties and morphology of indium-doped Ge₂Sb₂Te₅ thin films for phase change memory devices. P. Lazarenko¹, S. Kozuykhin², A. Sherchenkov¹, A. Babich¹, A. Vargunin², O. Pyatilova¹ . 1. National Research University of Electronic Technology , Moscow, Russia. 2. Kurnakov Institute of General and Inorganic Chemistry, RAS, Moscow, Russia .

P2-21

Effect of the moist porous silicon oxide layer on the electrical characteristics of memory cells. V. Levin, V. Mordvintsev, S. Kudryavtsev. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .

P2-22

Influence of thermocycling on the properties of Ge-Te system materials for application in nanoscale phase change memory cells . A. Sherchenkov¹, S. Kozyukhin², M. Michailova¹, A. Babich¹, P. Lazarenko¹ . 1. National Research University of Electronic Technology. 2. Kurnakov Institute of General and Inorganic Chemistry, RAS .

P2-23

Formation of nanomask with 10-20 nm elements using self-organizing processes in diblock-copolymers films. M.A. Bruk¹, E.N. Zhikharev², V.A. Kalnov², A.V. Spirin¹, I.I. А mirov² . 1. Karpov Institute of Physical Chemistry, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

P2-24

The new method of image formation by direct electron-beam etching of polymer resist . M.A. Bruk ¹ , E.N. Zhikharev², D.R. Streltsov¹, V.A. Kalnov², A.V. Spirin¹ . 1. Karpov Institute of Physical Chemistry, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia.

P2-25

The charging of PMMA-film resist in electron beam lithography. E.N. Evstafjeva, M.A. Knjazev, E.I. Rau, A.A. Svintsov, A.A. Tatarintsev, S.I. Zaitsev. Institute of Microelectronic Technology and High Purity Materials, RAS, Chernogolovka, Russia .

P2-2 6

Micropattern formation of diamond films . E.A. Il’ichev, A.E. Kuleshov, N.K. Matveeva, G.N. Petrukhin, R.M. Nabiev, G.S. Rychkov. F.V. Lukin State Research Institute of Physical Problems, Zelenograd, Russia .

P2-2 7

Formation of buried Ge nanocrystals and Cr (Mn) disilicides in Si by combination of ion implantation and MBE methods . N.G. Galkin¹, E.A. Chusovitin¹, K.N. Galkin¹, S.A. Dotsenko¹, S.V. Vavanova¹ , R.I. Batalov², R.M. Bayazitov² . 1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok, Russia. 2. Kazan Physical-Technical Institute, Kazan, Russia .

P2-28

Electroluminescence and photovoltage properties of Si-p/ b -FeSi₂ NC/Si-p/Si(100)-n mesa-diodes . N.G. Galkin¹, E.A. Chusovitin¹, D.L. Goroshko¹, A.V. Shevlyagin¹, T.S. Shamirzaev ² . 1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok, Russia. 2. Kazan Physical-Technical Institute, Kazan, Russia .

P2-29

Formation and properties of Ca silicide films and Si-Ca silicide-Si double heterostructures on Si(111) substrate . N.G. Galkin¹, S.A. Dotsenko¹, D.V. Bezbabny², K.N. Galkin¹, D.L. Goroshko¹, R. Kudrawiec³, E. Zielony³, A. Misiewicz³ . 1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok, Russia. 2. Amur State University, Blagoveshchensk, Russia. 3. Institute of Physics, Wroclaw State technical University, Wroclaw, Poland .

P2-30

Hydro chemical deposition method nanofilms ZnS_1-xSe_x . M.A. Jafarov , E.F. Nasirov, S.A. Jahangirova . Baku State University, Baku, Azerbaijan .

P2-31

Solar sell on the bazis heterojunctions p-CdS/p-CdTe/CdZnS, obtained by chemical deposition . M.A. Jafarov , E.F. Nasirov, S.A. Jahangirova . Baku State University, Baku, Azerbaijan .

P2-32

STM study of single tetrapod-shaped CdTe and CdTe/CdSe nanocrystal . A.S. Trifonov ¹ , R.B. Vasiliev ² , I.S. Ezubchenko ³ , M.S. Sokolikova ² , D.R. Britov ⁴ , D.E. Presnov ¹ , O.V. Snigirev ⁴ . 1. Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russia. 2. Department of Materials Science, Moscow State University, Moscow, Russia. 3. National Research Centre «Kurchatov Institute», Moscow, Russia. 4. Faculty of Physics, M.V.Lomonosov Moscow State University, Moscow, Russia .

P2-33

Luminescent properties of carbon incorporated porous silicon oxide. A. Vasin¹, S. Gordienko¹, A. Rusavsky¹, A. Nazarov¹, V.S. Lysenko¹, Yu. Piryatinski², I. Blonsky², E. Makila³, J.Salonen³, S. Prucnal⁴, L. Rebohle ⁴, W. Skorupa⁴ . 1. Lashkaryov Institute of Semiconductor Physics, Kiev, Ukraine. 2. Institute of Physics, Kiev, Ukraine. 3. Department of Physics, University of Turku, Turku, Finland. 4. Institut fur Ionenstrahlphysik und Materialforschung, Dresden, Germany .

P2-34

Germanium substrates for molecular-beam epitaxy . I.D. Burlakov, A.L.Sizov, N.I. Iakovleva, E.D. Korotaev, A.E. Mirofianchenko . State Scientific Center of Russian Federation “RD&P Center ORION”, Moscow, Russia .

P2-35

Direct wafer bonding of SiGe and Si crystalline wafers for high-power bipolar devices and SGOI. I.V. Grekhov¹, L.S. Kostina¹, T.S. Argunova^1,2, E.I. Belyakova¹, N.M. Shmidt ¹_, J.H. Je² . 1. Ioffe Physical Technical Institute, RAS, Petersburg, Russia. 2. Pohang University of Science and Technology, Pohang, Republic of Korea .

P2-3 6

Copper germanium alloys formation by the low temperature atomic hydrogen treatment . A. Kazimirov¹, E. Erofeev², V. Kagadei². 1. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia. 2. Research and Production Company “Micran”, Tomsk, Russia .

P2-3 7

Fabrication and structural study of In_xGa_1-xAs layers on porous GaAs(001) substrates . A. Lomov¹, J. Grym², D. Nohavica², E. Hulicius³, J. Pangrác³, A. Orehov ⁴, A. Vasiliev⁴ . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Institute of Photonics and Electronics of Academy of Science of Czeh Republic, Prague, Czech Republic. 3. Institute of Physics of Academy of Science of Czeh Republic, Prague, Czech Republic. 4. National Research Centre “Kurchatov Institute”, Moscow, Russia .

P2-38

Conductive Langmuir-Blodgett films based on poly (p-phenylenevinylene) derivates . N.K. Matveeva, E.A. Ilichev . Federal State Unitary Enterprise “Research Institute of Physical Problems named after F.V.Lukin”, Zelenograd, Russia .

P2-39

Features of formation of high-k dielectric layer in the W/ultrathin HfO₂/Si (100) structures under annealing. V. Rudakov, E. Bogoyavlenskaya, Yu. Denisenko, V. Naumov. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .

P2-40

Temperature oscillations in a silicon wafer under constant power of incoherent irradiation by heating lamps in a thermal chamber of RTP set up . V. Rudakov, A. Kurenya, V. Ovcharov, V. Prigara. Institute of Physics and Technology, Yaroslavl Branch, RAS, Yaroslavl, Russia.

P2-41

Hopping conductivity in Ge-SiO_x-Si structures with Ge nanoclusters. S.V. Kondratenko¹, Yu.N. Kozyrev², M.Yu. Rubezhanska², V.S. Lysenko³, Y.V. Gomeniuk³ . 1. Taras Shevchenko national University of Kyiv, Ukraine. 2. Chuiko Institute of Surface Chemistry, Kyiv, Ukraine. 3. V. Lashkarev Institute of Semiconductor Physics, NAS of Ukraine, Kiev, Ukraine .

P2-42

Modeling the influence of internal mechanical stresses on spatial distribution of oxygen during its precipitation in silicon. R. Goldstein¹, T. Makhviladze², M. Sarychev² . 1. Institute for Problems in Mechanics, RAS, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

P2-43

Modeling the electromigration and mechanical stresses in conductor lines containing impurities. T. Makhviladze, M. Sarychev. Institute of Physics and Technology, RAS, Moscow, Russia .

P2-44

The numerical model of simplest FIB on ions of rare gases for nano diagnostics and nano patterning. V.A. Zhukov¹, N.V. Badenko², P.V. Shpartko² . 1. St. Petersburg Institute of Information Science and Automation, RAS, St. Petersburg, Russia. 2. St. Petersburg State Polytechnic University , St. Petersburg, Russia .

P2-45

Molecular dynamics simulations of the low energy Ar ion-plasma sputtering of copper nanostuctures. A. Kupriyanov, O. Trushin, I. Amirov. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .

P2-4 6

Mechanisms of strain relief in Cu/Ni(100) heteroepitaxy . O. Trushin¹, T. Ala-Nissila², S-C. Ying³, E. Granato⁴ . 1. Yaroslavl Branch of the Intitute of Physics and Technology, RAS, Yaroslavl, Russia. 2. Aalto University, Helsinki, Finland. 3. Brown University, Providence, USA. 4. Instituto National de Pesquisas Espaciais, Sao Jose dos Campos, SP Brasil .

P2-4 7

Modeling of profile evolution at the low-energy ion sputtering in Ar plasma . A.S. Shumilov, I.I. Amirov. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .

P2-48

Formation of silicon oxide layer on the surface of mono-Si wafer by means of ion beam irradiation . B. Gurovich, K. Prikhodko, A. Taldenkov, D. Komarov, L. Kutuzov . National Research Center “Kurchatov Institute”, Moscow, Russia .

P2-49

The quantum-size Si dots formed in PECVD Si/SiO₂multilayers by irradiation with swift heavy ions. G. Kamaev^1,2, S. Cherkova^1,2, A. Antonenko^1,2, G. Kachurin¹, A. Gismatulin¹, D. Marin^1,2, V. Volodin^1,2, A. Cherkov^1,2, V. Skuratov³ . ¹ A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia; ²Novosibirsk State University, Novosibirsk, Russia; ³Joint Institute for Nuclear Research, Dubna, Russia .

P2-50

The study of nanostructures formation on AlSi thin film surface under ion-plasma sputtering . V. Bachurin, I. Amirov, M. Izyumov, V. Naumov, S. Simakin . Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .

P2-51

Efficiency of fast neutral particle beam sources based on gas-phase charge exchange processes . V.P. Kudrya. Institute of Physics and Technology, RAS, Moscow, Russia .

P2-52

Piezoelectric generator with filled space between the ZnO nanowires . D.G. Gromov¹, A.M. Kozmin¹, M.U.Nazarkin¹, S.P.Timoshenkov¹, S.A.Gavrilov¹, A.I.Kozlitin² . ¹ National Research University of Electronic Technology, Moscow, Russia. ²Joint research center “Synchrotron”, Moscow, Russia .

P2-53

Simulation of ZnO piezocantilever deflection for a contact AFM . E. Gusev, Yu. Eroshina . Taganrog Institute of Technology – Southern Federal University, Taganrog, Russia .

P2-54

NO₂, CO and CO₂ gas sensor based on magnetron deposited n- and p-type ZnO films . E. Gusev, A. Mikhno, V. Gamaleev, O. Mironenko . Taganrog Institute of Technology – Southern Federal University, Taganrog, Russia .

P2-55

The mode matching technology for MEMS gyroscope with mutually spaced eigenfrequences . O. Morozov¹, A. Postnikov¹ , I. Kozin¹, A. Soloviev², A. Tarasov² . 1. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia. 2. Federal state Unitary Enterprise “Center for Ground-Based Space Infrastructure Facilities Operation”, Moscow, Russia .

P2-5 6

Principal physical and technological problems and technical solutions for creating a new generation of high-temperature microelectromechanical SOIMT strain sensors. L. Sokolov¹, N. Parfenov², S. Igochin³. 1. Branch of MAI (TU) “Strela”, Zhukovsky, Russia. 2. MAI (TU), Moscow, Russia. 3. JSC “Interlab”, Moscow, Russia .

P2-5 7

MEMS angular rate sensors and roll sensors. A. Timoshenkov, S.M. Naing, D. Daniltsev, V. Kalugin . National Research University of Electronic Technology, Department of Microelectronics, Moscow, Russia .

P2-58

Technology development for the creation of conformal multilayer wiring boards based on polymers . A. Titov, Yu. Dolgovykh, K. Tikhonov, S. Timoshenkov. National Research University of Electronic Technology, Department of Microelectronics, Moscow, Russia.

Determination of electronic properties of molecular objects on the basis of nanodevices transport characteristics. V.A. Malinin, V.V. Shorokhov, E.S. Soldatov. Faculty of Physics, Moscow State University, 119899 Moscow, Russia

P1-02

Highly doped SOI based single-electron transistor: noise characteristics and charge sensitivity. D.E. Presnov1, V.S. Vlasenko2, S.V. Amitonov2, V.A. Krupenin2. 1. Nuclear Physics Institute, Moscow State University, Moscow, Russia  2. Laboratory of Cryoelectronics, Moscow State University, Moscow, Russia

P1-03

Nanocarbon films with electronic conductivity. N.F. Savchenko, M.B. Guseva, V.V. Khvostov, Yu.A. Korobov, A.F. Alexandrov. Physics Department, M.V. Lomonosov Moscow State University, Russia

P1-04

Secondary-emission properties of the carbon films. V.V. Khvostov, M.B. Guseva, N.F. Savchenko, Yu.A. Korobov, N.D. Novikov. Physics Department, M.V. Lomonosov Moscow State University, Moscow,  Russia.

P1-05

Investigation of auto-emission diodes with CNT emitters under small inter-electrode distance conditions. S. Orlov1, O. Gushchin1, S. Yanovich1, V. Shyshko1, O. Perveeva1, N. Savinsky2. 1. Mikron JSC, Zelenograd, Russia, 2. Institute of Physics and Technology, Yaroslavl Branch, RAS,  Yaroslavl, Russia

P1-06

Design of 3D nano-carbon emitter based autoemission devices. N. Savinski1, M. Gitlin1, A. Shornikov1. 1. Yaroslavl branch of Institute of Physics & Technology,Russian Academy of Sciences, Yaroslavl, Russia

P1-07

ZnO nanorods for device application. O.V. Kononenko 1, A.N. Red’kin 1, A.N. Baranov2, A.N. Panin1, 4, M.V. Shestakov3, V.T. Volkov1, A.I. Il’in1, E.E. Vdovin1 1. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia. 2. Moscow State University, Chemistry Department, Moscow, Russia 3. Moscow State University, Department of Materials Science, Moscow, Russia 4. Quantum-functional Semiconductor Research Center, Department of Physics, Dongguk University, Seoul, Korea.

P1-08

Observation of spin injection in ballistic nanostructures Mo(001)/Py. G.M. Mikhailov, V.Yu. Vinnichenko, A.V. Chernykh, I.V. Malikov, S.V. Piatkin. Institute of microelectronic technology and high purity materials RAS, Chernogolovka, Russia.

Formation of Voids in Silicon-Based Structures Annealed in Non-Isothermal Reactor. Yu.  I. Denisenko. Institute of Physics and Technology, Yaroslavl Branch, RAS,  Yaroslavl, Russia

P1-10

Si wires deposition by magnetron sputtering method. S. Evlashin, N. Suetin, V. Krivchenko. D.V. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University

P1-11

Nanocrystalline silicon on sapphire. D. Pavlov, P. Shilyaev, E. Korotkov, N. Krivulin. University of Nizhniy Novgorod, Nizhniy Novgorod, Russia.

P1-12

Formation of the atomically smooth surface of gold film and the binding of gold nanoparticles on it by the self-assembly method. A.N. Kuturov1, E.S. Soldatov2, L.A. Polyakova3, S.P. Gubin3. 1. P.N. Lebedev Physical Institute of the Russian Academy of Science, Moscow, Russia 2. M.V. Lomonosov Moscow State University, Moscow, Russia, 3. Institute of General Inorganic Chemistry of the Russian Academy of Science, Moscow, Russia

P1-13

LGD-technology of FM/SC hybrid nanostructrures. A.S. Sigov1, A.V. Abramov2, L.A.Bityutskaya3, E.V. Bogatikov3, M.V.Grechkina3, Yu.I. Dikarev3, A.P.Lazarev2, E.A.Pankratova2, V.M.Rubinshtein3, A.V.Tuchin3. 1. MIREA, Moscow, Russia, 2. «Rosbiokvant» Ltd, Voronezh, Russia  3. Voronezh State University, Voronezh, Russia

P1-14

Preparation of electrodes for molecular transistor by focused ion beam. I.V. Sapkov1, V.V. Kolesov2, E.S. Soldatov1 . 1. Department of Physics, Moscow State University, Russia, 2. Kotel’nikov Institute of Radioengineering & Electronics of  Russian Academy of Sciences, Moscow, Russia

P1-15

Formation of molecular transistor electrodes by electromigration. A.S. Stepanov1, E.S. Soldatov2, O.V. Snigirev1,2. 1. IMP, RRC “Kurchatov Institute”, Russia, 2. M.V. Lomonosov Moscow State University, Russia

P1-16

PECVD carbon nanostructure formation using DC glow discharge. D.G. Gromov, S.A. Gavrilov, I.S. Chulkov. Moscow Institute of Electronic Technology (Technical University), Zelenograd, Russia

Physical limitations of reliability in microwave microelectronic devices operating in periodical pulse mode. A.G. Vasiliev, V.F. Sinkevich. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia

P1-18

Principal problems of quality improvement for high-speed planar transmission lines issued from studies of high-Q microstrip resonators. A.P. Chernyaev2, V.A. Dravin1, A.Yu. Golovanov1,2, A.L. Karuzskii1, A.E. Krapivka1, A.N. Lykov1, V. N. Murzin1, A. V. Perestoronin1, A. M. Tskhovrebov1, N. A. Volchkov1. 1. P.N. Lebedev Physical Institute of Russian Academy of Sciences, Moscow, Russia 2. Moscow Institute of Physics and Technology (State University), Dolgoprudny, Russia.

P1-19

Effect of Conductivity Triggering: Studying and Optimization of MOS-like Structures. A.E. Berdnikov, A.A. Popov, A.A. Mironenko, V.D. Chernomordick, A.V. Perminov. Yaroslavl Branch of Institute of Physics & Technology of Russian Academy of Sciences, Russia

P1-20

Design and application features of nonvolatile memory based on ferroelectric thin films. A. Marycheva1, N. Zaitsev2. 1. Moscow Institute of Electronic Engineering (TU), Zelenograd, Russia,  2. Micron Corp., Zelenograd, Russia

P1-21

Research of SONOS non -volatile memory elements. O. Orlov 1, N. Shelepin 1. Mikron JSC, Moscow, Russia

P1-22

Research and optimization of anodic joint process of SOI microelectromechanical strain transducer with glass reference element. L. Sokolov1, N. Parfenov1, S. Timoshenkov2, V. Kalugin2. 1. Moscow Aviation Institute, Moscow, Russia 2. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia.

P1-23

Experimental research of the Magnetotransistor in a double well. A. Kozlov1, Yu. Parmenov1, R. Tikhonov2. 1. Moscow State Institute of Electronic Engineering – Technical University, 2. SMC “Technical University”

P1-24

The amplifier-concentrator of electrons as the base element of the emission electronics. E. Il`ichev, A. Kuleshov, E. Poltoratskii, G. Rychkov. State Research Institute of Physical Problems,Zelenograd, Moscow, Russia

P1-25

Piezoelectric current generator through filamentary nanocrystals of zinc oxide. M. Nazarkin, S. Gavrilov. Moscow Institute of Electronic Technologies (Technical University, Zelenograd, Russia

P1-26

New type of high efficiency power supply of digital units. Y. Chaplygin, V. Losev. Moscow State Institute of Electronic Engineering, Moscow, Russia

The theoretical analysis of electronic thermal properties of the interfaces between multiband superconductors and a normal metal. I.A. Devyatov1,  M.Yu. Romashka1, A.V. Semenov2, P.A. Krutitskii3, M.Yu. Kupriyanov1. 1. Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow, Russia, 2. State Pedagogical University, Moscow, Russia, 3. Keldysh Institute for Applied Mathematics, Moscow, Russia

P1-28

Microscopic theory of thermal phase slips in diffuse superconducting wires. A.V. Semenov1, I.A. Devyatov2, P.A. Krutitskii3, M.Yu. Kupriyanov2. 1. Moscow State Pedagogical University, Moscow, Russia, 2. Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russia, 3. Keldysh Institute for Applied Mathematics, Moscow, Russia

P1-29

Characteristics of Nb/?-Si/Nb Josephson junction arrays at frequencies of 68 – 75 GHz. A.L. Gudkov1, A.A. Gogin1, A.I. Kozlov1, A.N. Samys1, I.Ya. Krasnopolin2. 1. CJSC “Compelst”, FSUE “SRIPP n. F.V. Lykin”, Moscow,  Zelenograd, Russia 2. FSUE  “VNIIMS”, Moscow,  Russia

P1-30

Transport properties of josephson junctions with ferromagnetic layers. T.Yu. Karminskaya1, A.A. Golubov2, M.Yu. Kupriyanov1, A.S. Sidorenko3. 1. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 2. Faculty of Science and Technology and MESA+ Institute of Nanotechnology, University of Twente, The Netherlands. 3. Institute of Electronic Engineering and Industrial Technologies Chisinau, Moldova.

P1-31

Bi-SQUID with linear transfer function. V. Kornev1 , I. Soloviev1 , N. Klenov1, O. Mukhanov2. 1. Moscow State University, Moscow, Russia, 2. HYPRES, Elmsford, USA

Modeling of optical integrated circuit of a multiplexer/splitter on a basis of a photonic crystal structure. M. Belkin, K. Kostenko. Moscow State Technical University of Radio-Engineering, Electronics and Automation

P1-33

Computer-aided design of the high-efficient laser module for microwave-band fiber optic systems. M. Belkin, A. Loparev. Moscow State Technical University of Radio-Engineering, Electronics and Automation. Moscow, Russia

P1-34

Numerical methods for calculation of optical properties of layered structures. S.A. Dyakov1,4, V.A. Tolmachev1,2, E.V. Astrova2, S.G. Tikhodeev3, V.Y.Timoshenko4, T.S. Perova1 . 1. Trinity College Dublin, Dublin 2, Ireland. 2. Ioffe Physical Technical Institute, RAS, St. Petersburg, Russia 3. General Physics Institute, RAS, Moscow, Russia. 4. Faculty of Physics, Moscow University, Moscow, Russia.

P1-35

Vertical double range photocell with polysilicon photodiode, volume resonator and a photoelement with isotype potential p+ barrier in the substrate for UV application. I.V. Vanyushin1, V.A. Gergel2, N.M. Gorshkova2, A.G. Klimkovich1. 1. LCC “SensorIС”, Moscow, Russia. 2. Kotel`nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia

P1-36

Formation of One-Dimensional Photonic Crystals by Means of Photo-Electrochemical Etching of Silicon. Yu.A. Zharova1, G.V. Fedulova1, E.V. Astrova1, V.A. Ermakov2 and T.S. Perova2. 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St.Petersburg, Russia, 2. Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Ireland

P1-37

Titanium dioxide with carbon nanotubes nanocomposite for new generation solar cells. A. Dronov , S. Gavrilov. Moscow Institute of Electronic Technologies (Technical University), Russia

P1-38

Application of linear-chain carbon nano-films in optoelectronic devices. M.B. Guseva1, P.B. Konstantinov2, Y.A. Kontsevoy2, N.N. Novikov1, A.S. Skrileov2, V.V. Khvostov1, V.V. Chernokozhin2 . 1. Physical faculty of Lomonosov Moscow State University Moscow, Russia, 2.  FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia

P1-39

Critical temperature of SF and SFS multilayres with arbitrary electron mean free path in F and S films. M.Yu. Kupriyanov1, A.I. Buzdin1, A.A. Golubov2 . 1. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 2. Centre de Physique Moleculaire Optique et Hertzienne, Universite Bordeaux, CNRS, France. 3. Faculty of Science and Technology and MESA+ Institute of Nanotechnology, University of Twente, The Netherlands.

P1-40

Experimental study of differential SQIF-structures. V. Kornev1 , I. Soloviev1 , N. Klenov1, O. Mukhanov2. 1. Moscow State University, Russia, 2. HYPRES, Elmsford, USA

P1-41

Quantum interferometers on multichain of josephson junctions. A. Karuzskiy1, G. Kuleshova2, A. Tshovrebov1, L. Zherikhina1. 1. Lebedev Physical Institute, Russian Academy of Science, Moscow, Russia; 2. Moscow Engineering Physics Institute (State University) , Moscow, Russia

Propagation of magnetostatic surface waves in ferromagnetic films with variable thickness. Yu.A. Ignatov, V.I. Scheglov, A.A. Klimov, S.A. Nikitov. Kotel’nikov Institute of Radio Engineering and Electronics (IRE RAS), Moscow

P1-43

Modification of magnetic domain structures in Co film using the atomic force microscopy nano-oxidation. A. Bukharaev1,2, D. Biziaev1, P. Borodin1, I. Merkutov2 . 1. Zavoisky Physical Technical Institute of Russian Academy of Sciences,  Kazan, Russia, 2. Kazan State University, Kazan, Russia

P1-44

Investigations of magnetic states in multilayer submicron ferromagnetic particles. A.A. Fraerman, B.A. Gribkov, S.A. Gusev, A.Yu. Klimov, V.L. Mironov, V.V. Rogov, S.N.Vdovichev. Institute for physics of microstructures RAS, Nizhny Novgorod, Russia.

P1-45

Fe/MgO/Fe heterostructures on r-sapphire for single-crystal magnetic tunnel junctions. A. Chernykh, V. Vinnichenko, L. Fomin, G. Mikhailov. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia

P1-46

Epitaxial Fe3O4 films for spin valve applications. I.V. Malikov, G.M. Mikhailov. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia.

P1-47

Investigation of domain wall pinning and nanostructures remagnetization of epitaxial Fe structures with use of magnetic force contrast and magnetoresistance measurements. G.M. Mikhailov, V.Yu. Vinnichenko, L.A. Fomin, K.M. Kalach, I.V. Maliko. Institute of microelectronic technology RAS, Chernogolovka, Russia

P1-48

Dependence of two-layer structures Cu/Co magnetoresistance on thickness of copper. V. Naumov. Yaroslavl branch of Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl, Russia.

P1-49

Study of size effect on switching characteristics of spinvalve GMR sensor. O.S. Trushin1 , E.Yu. Buchin1 , V.F. Bochkarev1, N. Barabanova2. 1. Yaroslavl Branch of the Institute of Physics and Technology of  Russian Academy of Sciences, Yaroslavl, Russia, 2. Department of Physics, Yaroslavl State University, Yaroslavl, Russia

P1-50

GMR sensor design optimization using micromagnetic simulations. O.S. Trushin1, N. Barabanova2, V.P. Alexeev2 . 1. Yaroslavl Branch of the Institute of Physics and Technology of  Russian Academy of Sciences, Yaroslavl, Russia, 2. Department of Physics, Yaroslavl State University, Yaroslavl, Russia

P1-51

Optical and thermal effects in polymers with superparamagnetic impurities. R.M. Aynbinder. Institute of Chemical Technology, Prague, Czekh Republic.

P1-52

Ferromagnetic resonance study of thin Si65Mn35 layer. S. Kapelnitsky1,2. 1. Russian Research Centre “Kurchatov Institute”, Moscow, Russia. 2. Institute of Physics and Technology, Russian Academy of Sciences, Moscow , Russia

Magnetic and thermal properties of nanocomposite GdNiO3 . А.I. Rykova1, V.M. Dmitriev1, E.N. Khatsko1, A.V. Terekhov1 А.S. Cherny1,  D.S. Kondrashev1, T. Mydlarz2, A. Zaleski2  , A.D. Shevshenko3, V.M. Uvarov3 . 1. B.I.Verkin Institute for Low Temperature Phys. & Engineering of NASU, Kharkov, Ukraine. 2. International laboratory of high magnetic fields and low temperatures, Wroclaw, Poland, G. V. Kurdyumov Institute for Metal Physics of the NAS of Ukraine, Kyyiv, Ukraine

D1-02

Magnetic properties of system La1-xSmxMnO3  . А.I. Rykova1, E.N. Khatsko1, А.S. Cherny1, T. Mydlarz2, J. Warchulska2 . 1. B.I.Verkin Institute for Low Temperature Phys. & Engineering of NASU, Kharkov, Ukraine 2. International laboratory of high magnetic fields and low temperatures, Wroclaw, Poland

Calculation of the characteristics of electron transport through molecular clusters. Y.S. Gerasimov1 , V.V. Shorokhov2 , E.S. Soldatov2 , O.V. Snigirev1,2. 1. IMP, RRC “ Kurchatov Institute”, Moscow, Russia, 2. Faculty of Physics, Moscow State University, Moscow, Russia

P2-02

Investigation of segregation effect in InGaAs/GaAs quantum wells by means a computer simulation. A.N. Baryshev, S.V. Khazanova. Nizhni Novgorod University im.N.I.Lobachevskogo, NIzhni Novgorod, Russia

P2-03

Simulation of impurity diffusion at the formation of ultrashallow active areas in silicon-based FET. F. Komarov1, O. Velichko2, A. Mironov1, G. Zayats3, A. Komarov1, V. Tsurko3. 1. Institute of Applied Physics Problems, Minsk, Belarus, 2. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus 3. Institute of Mathematics, Academy of Sciences of Belarus, Minsk, Belarus.

P2-04

Modeling of the interfacial separation work in relation to impurity concentrations in adjoining materials. I. Alekseev, T. Makhviladze, A. Minushev, M. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia.

P2-05

Energetics and atomic mechanisms of strain relaxation in heteroepitaxial systems. O. Trushin1 , J. Jalkanen2 , E. Granato3 , S-C. Ying4, T. Ala-Nissila2. 1. Institute of Physics and Technology of  Russian Academy of Sciences, Yaroslavl Branch, Yaroslavl, Russia, 2. Department of Engineering Physics, Helsinki University of Technology, Espoo, Finland, 3. Laboratґorio Associado de Sensores e Materiais, Instituto National de Pesquisas Espaciais, Sao Jose dos Campos, SP, Brazil, 4. Department of Physics, Brown University, Providence, RI 02912, USA

P2-06

Off-lattice self-learning kinetic Monte-Carlo: application to 2D cluster diffusion on metal surfaces. O. Trushin1 , A. Makin2 , T.S. Rahman3. 1. Institute of Physics and Technology of  Russian Academy of Sciences, Yaroslavl Branch, Yaroslavl, Russia, 2. Department of Physics, Yaroslavl State University, Yaroslavl, Russia 3. Department of Physics, University of Central Florida, Orlando, FL, USA

P2-07

Nanoobject sizes of defects in porous systems and defective materials according ADAP method. Part I. S.P. Timoshenkov1, E.P. Svetlov-Prokop’ev1,2, V.I. Grafutin 1 1. Moscow Institute of Electronic Technology (Technical University), TU- MIET, Zelenograd, Russia,2. «State Science Centre of the Russian Federation- A.I.Alikhanov Institute for theoretical and experimental physics»,  Moscow, Russia

P2-08

Nanoobject sizes of defects in porous systems and defective materials according ADAP method. Part II. S.P. Timoshenkov1, E.P. Svetlov-Prokop’ev1,2, V.I. Grafutin 1 1. Moscow Institute of Electronic Technology (Technical University), TU- MIET, Zelenograd, Russia,2. «State Science Centre of the Russian Federation- A.I.Alikhanov Institute for theoretical and experimental physics»,  Moscow, Russia

P2-09

Calculation of electrophysical parameters of thin undoped GaAs-in-Al2O3 quantum nanowires and single-wall armchair carbon nanotubes. D.V. Pozdnyakov1, A.V. Borzdov1, V.M. Borzdov1, V.A. Labunov2 . 1. Belarusian State University, Minsk, Belarus, 2. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus

P2-10

Penetration of quantum-mechanical current density under semi-infinite rectangular potential barrier as the consequence of the interference of the electron waves in semiconductor 2D nanostructures. V.A. Petrov, A.V. Nikitin. Institute of Radio Engineering and Electronics, Russian Academy of Sciences,Moscow, Russia

P2-11

Laser generation in broken-gap heterostructures. I. Semenikhin1, K.A. Chao2, A. Zakharova1. 1. Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia,  2. Department of Physics, Lund University, Lund, Sweden, and Department of Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden

P2-12

Monte Carlo simulation of submicron three-gate MOSFETs. O. Zhevnyak, V. Borzdov , A. Borzdov, D. Speranski. Belarussian State University, Minsk, Belarus

P2-13

SPICE Modeling and TCAD Simulation of Si Vertical Double-Diffused MOSFET. A.V. Sedov1, V.O. Turin1, A.M. Tsyrlov2, G.I. Zebrev3. 1. Orel State Technical University, Orel, Russia, 2. JSC “Proton”, Orel, Russia, 3. National Research Nuclear University “MEPHI”, Moscow, Russia

P2-14

Modeling of HBT with Si1-X-YGeXCY base. K. Petrosjanc, R. Torgovnikov. Moscow State Institute of Electronics and Mathematics, Moscow, Russia

P2-15

Reversible Gate Oxide Defect Recharging in Nanoscale Field Effect Transistors: Charge Annealing, Tunnel Gate Leakage, Random Telegraph Signal and 1/f Noise. G.I. Zebrev, N. Samokhin, D. Batmanova. Micro- and Nanoelectronics Department, National Research Nuclear University “MEPHI”, Moscow, Russia

P2-16

Radiation-Hardening-by-Design with Circuit-Level Modeling of Total Ionizing Dose Effects in Modern CMOS Technologies. M. Gorbunov1 , G. Zebrev2 , P. Osipenko1. 1. Scientific-Research Institute of System Studies, Russian Academy of Sciences, Moscow, Russia  2. Moscow Engineering Physics Institute, Moscow, Russia

P2-17

Specification of model for the multi-cathode quantum vacuum nano-triode on the base of new experimental data. V.A. Zhukov. St. Petersburg Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia

P2-18

The specifics of modeling high-speed integrated amplifiers with high amount of feedback. E.M. Savchenko, A.S. Budyakov. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia

Formation of Ge/Cu ohmic contacts to n-GaAs with atomic hydrogen pre-annealing step. E. Erofeev1, V. Kagadei2. 1. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia 2. Research and production company “Micran”, Tomsk, Russia.

P2-20

Hf-based barrier layers for Cu-metallization. Denisenko Yu.I.1, Gusev V.N.1, Khorin A.I.1,2, Orlikovsky A.A.1, Rogozhin A.E.1, Rudakov V.I.1, Vasiliev A.G.1,3 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia 2. Moscow State Institute of Radio-engineering, Electronics and Automation, Moscow, Russia, 3. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia

P2-21

Properties of HfO2 films on Si-substrate obtained by electron beam vapor deposition. A.V. Ershov, S.N. Zubkov, V.V. Karzanov, S.V. Khazanova, О.N. Nikolaeva, D.A. Nikolichev. Nizhni Novgorod University im.N.I.Lobachevskogo, NIzhni Novgorod, Russia.

P2-22

Some peculiarities in the formation functional films by sol-gel and electrophoretic technologies. N. Korobova1, S. Timoshenkov2 , A. Shabanova3. 1. Kazakh National University, Almaty, Kazakhstan.; 2. Moscow Institute of Electronic Technology, Moscow, Russia, 3. National Engineering Academy, Almaty, Kazakhstan.

P2-23

The peculiarities of creating composite glasses for multilayer structures, MEMS structures included. S. Timoshenkov 1, O. Orlov 2 . 1. Moscow Institute of  Electronic Technology, Moscow, Russia, 2.  Mikron JSC, Moscow, Russia

Electron Beam Lithography using PMMA as negative resist. E.N. Zhikharev, S.N. Averkin, V.A. Kalnov. Institute of Physics and Technology of Russian Academy of Science, Moscow, Russia

P2-25

Application of virtual scanning electron microscope to determine the parameters of atom nanolithograph microlenses. A. Zablozkiy1, E. Shehin1, A. Kuzin1, A. Baturin1, P. Melentiev2, D. Lapshin2, V. Balykin2 . 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 2. Institute of Spectroscopy Russian Academy of Sciences, Troitsk , Russia

Features of relief formation at silicon surfaces by etching with focused ion beam. N. Gerasimenko1, A. Chamov1,2, E. Novoselova2, V. Khanin2. 1. Moscow Institute for Electronic Engeneering, Moscow, Russia, 2. JSC Mikron, Moscow, Russia.

P2-27

Modification of electrophysical behavior of surface adjacent to FIB milling area. A.A. Chouprik, A.A. Kuzin, A.V. Zablotskiy. Moscow Institute of Physics and Technology, Dolgoprudny, Russia.

P2-28

Formation of buried borosilicate layers by means of ion implantation. A. Churilov, S. Krivelevich, R. Seljukov. Yaroslavl branch of Institute of Physics & Technology, Russian Academy of Sciences, Yaroslavl, Russia

P2-29

Fast atom beam formation of inert and chemically active substances in an extensive source of ions for application in the technological processes. Y. Maishev, S. Shevchuk, T. Matveev. Institute of Physics and Technology RAS, Moscow, Russia.

Microwave plasma assisted single crystal diamond films growth and its application in microelectronics. A.L. Vikharev1, A.M. Gorbachev1, A.B. Muchnikov1, D.B. Radishev1, A.A. Altukhov2, A.V. Mitenkin2, M.P. Dukhnovsky3, V.E. Zemlyakov3. 1. Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, Russia, 2. ITC «UralAlmazInvest», Moscow, Russia, 3. FSUE «Istok», Fryazino, Russia

P2-31

Plasma damage and restoration of CVD low-k materials. E. Smirnov1,2 , A. Ferchichi2 , L. Zhao2, M.R. Baklanov2. 1. Moscow Institute of Electronic Technology (Technical University), Zelenograd, Russia 2. IMEC, Leuven, Belgium.

P2-32

Optimization of parameters of deep plasma chemical process of silicon etchings for elements MEMS. A.I. Vinogradov, N.M. Zaryankin, Yu.A. Mikhajlov, E.P. Prokopiev, S.P. Timoshenkov. Moscow Institute of Electronic Technology (Technical University), TU- MIET, Zelenograd, Moscow, Russia

P2-33

Formation of periodical nanostructures on semiconductors using solid alumina template. A. Belov, S. Gavrilov, V. Shevyakov. Moscow Institute of Electronic Techologies (Techincal University), Zelenograd, Russia

P2-34

The effect of plasma treatment on the residual stresses of metallic cantilever structures. I.I. Amirov, V.V. Naumov. Yaroslavl branch of the Institute of Physics & Technology, Russian Academy of Sciences,, Yaroslavl, Russia

P2-35

Kinetics of the GaAs etch process in the Cl2 dc glow discharge plasma. A. Dunaev, S. Pivovarenok, A. Efremov, V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia

P2-36

Plasma parameters and composition in HCl/X (X=Cl2, H2, Ar) dc glow discharges. A. Efremov, V. Svettsov, S. Lemehov. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia

P2-37

Emission Tomography Algorithm Optimization: Applications for Microelectronic Plasma Equipment. A.V. Fadeev, K.V. Rudenko, V.F. Lukichev, A.A. Orlikovsky. Lab. of Microstructuring and Submicron Devices, Institute of Physics & Technology, Russian Academy of Sciences, Moscow, Russia

Characterization of GaSb(001) surface under pre-growth processing. M.S. Dunaevskii, E.V. Kunitsina, T.V. L’vova, A.N. Semenov, B.Y. Meltser, J.V. Terentyev. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Saint-Petersburg,, Russia.

P2-39

Measurements samples temperature and dynamics of recrystallization of implanted silicon at rapid thermal processing. Ya. Fattakhov, M. Galyautdinov, B. Farrakhov, M. Zakharov. Kazan Physical Technical Institute of the Russian Academy of Sciences, Kazan, Russia.

P2-40

Features of electron direct tunneling through an ultrathin oxide under the non-stationary depletion of  a n-Si surface. G.V. Chucheva, E.I. Goldman, Yu.V. Gulyaev, A.G. Zhdan. The Institute of Radio Engineering and Electronics Russian Academy of Sciences, Fryazino, Russia

P2-41

Investigations of nanostructured porous PbTe films with X-ray diffractometry and reflectometry. S.P. Zimin1, V.M. Vasin1, E.S. Gorlachev2, A.P. Petrakov3, S.V. Shilov3. 1. Yaroslavl State University, Russia, 2. Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Russia, 3. Syktyvkar State University, Russia

P2-42

Relationship between modification of electrophysical properties and structural characteristics in semiconductor nanosized heterostructuresInxAl1-xAs/InyGa1-yAs/InxAl1-xAs/InP. R.M. Imamov1, I.A. Subbotin1, G.B. Galiev2, I.S. Vasil’evsky2, E.A. Klimov2 . 1. Shubnikov Institute of Crystallography RAS, Moscow, Russia. 2. Institute of UHF Semiconductor Electronic, Moscow, Russia

P2-43

Characterization of Polymer Semiconductors with TOF-Sims and FTIR. V. Bachurin1, A. Churilov1, O. Kolesnikov1, A. Rudy2, S. Simakin1. 1. Yaroslavl branch of Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl, Russia, 2. Yaroslavl State University, Yaroslavl, Russia.

P2-44

General mechanism of the electric inactivity of the impurity atoms in chalcogenide vitreous semiconductors. G.A. Bordovsky, R.A. Castro, P.P. Seregin, Y.M. Stepanov. Herzen State Pedagogical University of Russia, Saint-Petersburg, Russia

P2-45

Broadband dielectric spectroscopy of As2Se3 modified layers. N.I. Anisimova, V.A. Bordovsky, R.A. Castro, G.I. Grabko, D.S. Kirbiatev, Y.M. Stepanov. Herzen State Pedagogical University of Russia, Saint-Petersburg, Russia

Plasma molding in deep silicon reactive ion etching. O. Morozov. Yaroslavl branch of the Institute of Physics & Technology, RAS, Russia.

D2-02

Integration of the DRIE and deep silicon oxidation technologies for suspended MEMS fabrication using standard silicon wafer. A. Postnikov 1, O. Morozov1, I. Amirov1 ,  V. Kalnov2. 1. Yaroslavl branch of the Institute of Physics & Technology, RAS, Yaroslavl, Russia. 2. Institute of Physics & Technology, RAS, Moscow, Russia.