Oral Presentations | Posters

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Wednesday, October 3rd 2012

Entresol

16.30 – 18.30 Poster session I

 

Simulation and Modeling I

P1-01

A universal model for single-electron device simulation. I.I. Abramov, A.L. Baranoff, I.A. Romanova, I.Y. ShcherbakovaBelarusian State University of Informatics and Radioelectronics, Minsk, Belarus .

P1-02

Monte Carlo simulation of charge carrier transport in deep submicron Si MOSFET A.V. Borzdov1, V.M. Borzdov1, D.V. Pozdnyakov1, D.S. Speransky1, V.V. V’yurkov 2, A.A. Orlikovsky2 1. Belarusian State University, Minsk, Belarus. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

P1-03

Thermal simulating of thin-film SOI MOSFET Yu. Chaplygin, А . Krasukov, E. Artamonova National Research University of Electronic Technology (MIET) Moscow, Russia .

P1-04

Ultimate sub-threshold slope of Schottky barrier field-effect transistors. Ye. Chaplygin, D. Svintsov, V. Vyurkov, A. OrlikovskyInstitute of Physics and Technology, RAS, Moscow, Russia .

P1-05

Transient processes in the resonant tunneling diode, taking into account the electron-electron interaction V. Elesin1, I. Kateyev2, A. Sukochev1 1. National Research Nuclear University, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

P1-06

Effect of emitter spacer level of resonant tunneling diode on I-V curves. V. Elesin, M. Remnev National Nuclear Research University “MEPhI”, Moscow, Russia .

P1-07

Gold nanoparticle single-electron transistor simulation Y.S. Gerasimov, V.V. Shorokhov, E.S. Soldatov, O.V. Snigirev Faculty of Physics, Moscow State University, Moscow, Russia .

P1-08

TCAD analysis of self heating effects in bulk silicon and SOI n-MOSFETs K. Petrosyants1, E. Orekhov2, I. Kharitonov1, D. Popov1 1. Moscow State Institute of Electronics and Mathematics (Technical University), Moscow, Russia. 2. Institute for Design Problems in Microelectronics, RAS, Zelenograd, Moscow, Russia .

P1-09

Terahertz oscillations from nanowires A. Pilgun1, V. Vyurkov1, L. Fedichkin1,2, V. Borzdov3, A. Orlikovsky1 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Computer company NIX, Moscow, Russia. 3. Belarusian State University, Mink, Belarusia .

P1-10

Modeling low-volt nanometer merged MOS devices. V. RakitinScientihic Research Institute of Physical Problems, Moscow, Russia .

P1-11

Nonlinear model of an LDMOS transistor for an RF power amplifier with output power 30 Watt in the frequency range 1.20 – 1.32 GHz. E.M. Savchenko1,2, A.S. Budyakov1,3, A.D. Pershin1,2, S.M. Romanovsky1 1. FSUE “S&PE “Pulsar”, Moscow , Russia. 2. MSTU MIREA, Moscow. 3. N.E. Bauman MSTU, Moscow, Russia .

P1-12

Modeling of the silicon complementary bipolar technology process with germanium implantation. E.M. Savchenko1,2, D.G. Drozdov11. FSUE “S&PE “Pulsar”, Moscow, Russia. 2. MSTU MIREA, Moscow, Russia .

P1-13

Tunnel graphene field-effect transistor D. Svintsov1, V. Vyurkov1, A. Burenkov2, R. Oechsner2, V. Lukichev1, A. Orlikovsky1 . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen, Germany .

P1-14

Numerical model of parallel nano-FET on Coulomb blockade in M55 “magic” crystals V.A. Zhukov1, V.G. Maslov2, N.T. Bagraev3 1. St. Petersburg Institute of Information Science and Automation, RAS, St. Petersburg, Russia. 2. St. Petersburg National Research University of Information Technologies, Mechanics and Optics , St. Petersburg, Russia, 3. Ioffe Physical Technical Institute, RAS, St. Petersburg, Russia .

P1-15

A model to describe the hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles. V. Stuchinsky, G. Kamaev, M. Efremov, S. ArzhannikovaInstitute of Semiconductor Physics, RAS, Novosibirsk, Russia .

P1-16

MCT photodiodes spectral response. K.O. Boltar1,2, A.V. Nikonov1,2, N.I. Iakovleva11. State Scientific Center of Russian Federation “RD&P Center ORION”, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Moscow, Russia .

P1-17

Numerical calculations of the concentration profile for InGaAs/GaAs heterostructures with δ-doping layers S.V. Khazanova, V.E. DegtyarevLobachevskiy Nizhnii Novgorod University, Nizhni Novgorod, Russia .

Magnetic Micro- and Nanostructures

P1-18

Changing of magnetic properties in magneto-photonic crystals by light influence . D.E. Afanas’eva1, A.N. Kuprianov2, A.V. Paporkov1, A.V. Prokaznikov1,2 1. Yaroslavl State University, Institute of Semiconductor Physics, Yaroslavl, Russia. 2. Yaroslavl Branch of the Institute of Physics and Technology, Russia .

P1-19

Comparative study of ultrathin Co films grown by ion-plasma and magnetron sputtering. V.F. Bochkarev1, O.S. Trushin1, V.V. Naumov1, S.V. Vasiliev2, and V.A. Paporkov 2 1. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia. 2. Yaroslavl State University, Yaroslavl, Russia .

P1-20

Fabrication of epitaxial tunnel magnetic junctions Fe/MgO/Fe(001) using pulse laser deposition A. Chernikh, V. Vinnechenko, L. Fomin, I. Malikov, and G. Mikhailov Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia .

P1-21

Experimental observation and simulation of a spin-polarized current effect on magnetic structure of epitaxial Fe (001) quadratic microstructures L.A. Fomin, I.V. Malikov, K.M. Kalach, S.V. Pyatkin, G.M. Mikhailov Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia .

P1-22

Size and magnetic anisotropy effect of micromagnetic states in rectangular epitaxial Fe (011) microstructures . L.A. Fomin, I.V. Malikov, S.V. Pyatkin, G.M. MikhailovInstitute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia.

P1-23

Epitaxial film growth for Fe3O4/MgO/Fe (001) tunnel magnetic junctions fabrication . I.V. Malikov, V.Yu. Vinnichenko, L.A. Fomin, G.M. MikhailovInstitute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia.

 

Nanomaterials and Nanostructures Technologies

P1-24

Development technology of creation sensor nanomaterials based on ZnO O.A. Ageev, E.G Zamburg, Z.E. Vakulov, A.V. Shumov, D.E. Vakulov, M.N. Ivonin, V.V. Ptashnik Taganrog Institute of Technology, Sothern Federal University, Taganrog, Russia .

P1-25

Specificity of the synthesis of carbon nanotubes using the combined catalyst S. Basaev, V.A. Galperin, A.A. Pavlov, Yu.P. Shaman, A.A. ShamanaevScientific-Manufacturing Complex “Technological Centre”, Moscow, Russia .

P1-26

Method of fabricating nanopores in silicon wafer via P+ and O2+ co-implantation and non-isothermal annealing. Yu.I. DenisenkoYaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .

P1-27

Investigation of dependence of morphology and fractal characteristics of porous silicon on anodizing conditions. D. Gaev1, A. Boyko2S. Timoshenkov21. Kabardino-Balkarian State University, Nalchik, Russia. 2. National Research University of Electronic Technology, Moscow, Russia .

P1-28

The study of water s uspensions of nanomaterials containing c arbon nanotubes L.P. Ichkitidze 1 , S.V. Selishchev1, E.V. Blagov2, V.A. Galperin3, Y.P. Shaman3, L.V. Tabulina 4, B.G. Shulitski4 1. National Research University of Electronic Technology “MIET” , MIET, Zelenograd, Moscow, Russia. 2. Institute of Nanotechnology of Microelectronics, RAS, Moscow, Russia. 3. Scientific-Manufacturing Complex “Technological Centre”, MIET, Zelenograd, Moscow, Russia. 4. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus .

P1-29

Features of nanostructures formed in solid substrates E. Il’ichev, A. Kozlitin, D. Migunov, O. Sakharov, A. Trifonov, G. Petruchin, G. Richkov Scientific Research Institute of Physical Problems named after F.V. Lukin, Moscow, Russia .

P1-30

Carbon nanotubes-silicon composite material as anode structure in lithium batteries E.P. Kitsyuk1, V.A. Galperin1, Y.P. Shaman1, D.G. Gromov2, A.M. Skundin3, E.K. Tuseeva3 1. Scientific-M anufacturing Complex “Technological Centre”, Moscow, Russia. 2. National Research University of Electronic Technology, Moscow, Russia. 3. A.N. Frumkin Institute of Physical Chemistry and Electrochemistry RAS, Moscow, Russia .

P1-31

Formation of nanoelectrodes for high temperature single-electron sensors A. Parshintsev , E. Soldatov Department of Physics, Moscow State University, Moscow, Russia .

P1-32

Research of resolution of masking layers of the molybdenum structured on technologies of laser thermochemical record S. Poletaev1,2, O. Moiseev2 1. S.P. Korolyov Samara State Aerospace University (National Research University), Samara, Russia. 2. Image Processing Systems Institute, RAS, Samara, Russia .

P1-33

Formation of CNT ordered array, as source of electrons. A. Shuliatyev , D. Gromov, A. Zaycev, A. Shamanaev National Research University of Electronic Technology, Zelenograd, Russia .

P1-34

Fabrication of integrated electrodes of molecular transistor electrodes by lithographic techniques and electromigration. A.S. Stepanov 1 , E.S. Soldatov2, O.V. Snigirev2 1. Skobeltsyn Institute of Nuclear Physics, M.V. Lomonosov Moscow State University, Moscow, Russia. 2. Department of Physics, M.V. Lomonosov Moscow State University, Moscow, Russia .

P1-35

Narrowing of nanogaps for purpose of molecular single-electronicsI.V. Sapkov, E.S. Soldatov Department of Physics, Moscow State University, Russia.

P1-36

Electron Multiplier on Diamond-Coated Silicon Membrane . E.A. Il’ichev, A.E. Kuleshov, N.K. Metveeva, G.N. Petrukhin, R.M. Nabiev, G.S. RychkovF.V. Lukin State Research Institute of Physical Problems, Zelenograd, Russia.

 

Device Structures I

P1-37

Mechanism of sensitivity of a three-collector magnetotransistor . V.V. Amelichev, A.A. Cheremisinov, S.A. Polomoshnov, R.D. TikhonovSMC “Technological Centre” MIET.

P1-38

The observation of conduction quantization of metallic nanojunctions at normal conditions . L. Fedichkin1,2,3, A. Borisov2, M. Chernyshev2, V. Rubaev21. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. NIX, Moscow, Russia .

P1-39

The novel THz generation and detection possibilities of resonant-tunneling based semiconductor multiple-quantum well nanostructures A.L. Karuzskii, V.V. Kapaev, V.N. Murzin, Yu.A. Mityagin, S.A. Savinov, A.V. Perestoronin, A.M. Tshovrebov, N.A. Volchkov, I.P. Kazakov, V.I. Egorkin, S.S. Shmelev P.N. Lebedev Physical Institute of RAS, Moscow, Russia.

P1-40

Suspended silicon single-electron transistor . V. Krupenin1, D. Presnov1,2S. Amitonov1, K. Rudenko3, V. Rudakov3 1. Laboratory of Cryoelectronics, Moscow State University, Moscow, Russia. 2. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 3. Institute of Physics and Technology, RAS, Moscow, Russia .

P1-41

Optimization of topological parameters of triode with cold cathode based on ordered array of (9, 9) carbon nanotubes with open ends .D.V. Pozdnyakov1, A.V. Borzdov1V.M. Borzdov1, V.A. Labunov2.1. Belarusian State University, Minsk, Belarus. 2. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.

P1-42

Experimental and theoretical study of nanowire FET based on SOI . I.I. Soloviev1, I.A. Devyatov 1, P.A. Krutitskiy2, S.V. Amitonov3, D.E. Presnov 3, V.A. Krupenin3 1. D.V. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 2. M.V. Keldish Institute of Applied Mathematics, Moscow, Russia 3. Physics Faculty, Moscow State University, Moscow, Russia .

P1-43

Instability-driven terahertz emission and injection locking behavior in an asymmetric dual-grating-gate HEMT with a vertical cavity structure T. Watanabe, T. Fukushima, Y. Kurita, A. Satou, T. OtsujiResearch Institute of Electrical Communication, Tohoku University, Sendai, Japan.

 

Plasma Processing

P1-44

Formation of 3D high aspect ratio micro- and nanostructures in Si by plasma etching and thermal oxidation. I. Amirov1, V. Lukichev2, M. Izyumov1, E. Zhikharev2, V. Kal’nov21. Yaroslavl Branch of the Institute of Physics and Technology , RAS, Yaroslavl, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

P1-45

Kinetic characteristics of electron impact processes in BCl3A. Efremov, V. Plotnokov, V. SvettsovIvanovo State University of Chemistry & Technology, Ivanovo, Russia .

P1-46

Plasma emission spectra in CCl2F2/Ar gas mixture D.B. Murin, V.I. Svettsov, A.M. Efremov, A.E. LeventsovIvanovo State University of Chemical Technology, Ivanovo, Russia .

P1-47

Poly- and nanocrystalline silicon films formed by PECVD for micro- and nanodevices. E. Gusev, R. VelichkoTaganrog Institute of Technology – Southern Federal University, Taganrog, Russia .

P1-48

Etching characteristics and mechanisms of Mo and Al2O3 thin films in inductively coupled Cl2/O 2/Ar plasmas. K.-H. Kwon1, K. Kim1, Y.-H. Ham1, A. Efremov21. Korea University; Sogamg University. 2. Ivanovo State University of Chemistry & Technology, Russia .

P1-49

Instrumented wafer as a Langmuir multiprobe tool for lateral plasma homogeneity measurements in processing plasma reactors A. Miakonkikh, S. Lisovsky, M. Rudenko, K. Rudenko Institute of Physics and Technology, RAS, Moscow, Russia .

P1-50

Method of saturable absorber fabrication by PECVD of carbon nanostructures on optical fibers A.E. Mironov, S.V. Dubkov, D.G. GromovNational Research University of Electronic Technology, Moscow, Russia .

P1-51

Plasma molding in deep silicon reactive ion etching. O. MorozovInstitute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl, Russia .

P1-52

Investigation of plasma etching of Si and SiO2 through electron resist ZEP-7000. Yu. Shikolenko1, A. Antonovich1, D. Lapin1, V. Lukichev1,21. MSTU MIREA, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

 

Micro- and Nanostructures Characterization

P1-53

Determination of alloy composition in GexSi1-x/SiO2/Si microstructures B.Ya. Ber, E.I. Belyakova, D.Yu. Kazanzev, L.S. Kostina, A.N.Smirnov, N.M. Shmidt Ioffe Physical Technical Institute, RAS, Petersburg, Russia .

P1-54

Monitoring of resonant-tunneling diode growth by reflectance anisotropy spectroscopy. I.P. KazakovP.N. Lebedev Physical Institute RAS, Moscow, Russia .

P1-55

Quality control of SOS structures by means of surface photovoltage. S.V. Kozlov, V.M. MaslovskyThe company OJSC “Angstrem”, Zelenograd, Russia .

P1-56

Effective probe for scanning electron microscope . Yu.V. Larionov, Yu.A. NovikovA.M. Prokhorov General Physics Institute, RAS, Moscow, Russia.

P1-57

Distortion of relief profile of a test object with nanometer sizes due to contamination in SEM. Yu.V. Larionov, Yu.A. Novikov A.M. Prokhorov General Physics Institute, RAS, Moscow, Russia.

P1-58

An improved detection of the locally doped semiconductor regions with the scanning electron microscope N.A. Orlikovsky1E.I. Rau2, A.M. Tagachenkov3, I.P. Vasyuk41. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Moscow State University Physical Department, Moscow, Russia. 3. Institute of Nanotechnology and Microelectronics RAS, Moscow, Russia. 4. Kharkov National University, Kharkov, Ukraine .

P1-59

The development of method for measuring of current density distribution in micro- and nanosystems. I. Rudnev, A. Podlivaev, S. Pokrovskiy, A. MenushenkovNational Nuclear Research University, “MEPHI”, Moscow, Russia .

P1-60

Determination of the content in AlxGa1-xAs alloys by secondary ion mass spectrometry V.V. Saraykin1, I.S. Vasil’evskii2, A.N. Vinichenko2, K.D. Scherbachev3 . 1. Scientific Research Institute of Physical Problems named after F.V.Lukin, Moscow, Russia. 2. National Research Nuclear University «MEPhI», Moscow, Russia. 3. National University of Science and Technology «MISiS», «Material science and Metallurgy» Center, Moscow, Russia .

P1-61

Atomic force microscopy for line edge roughness measurements A. Sosnina, A. Miakonkikh, A. Rogozhin Institute of Physics and Technology, RAS, Moscow, Russia .

 

Thursday, October 4th 2012

Entresol

16.45 – 18.30 Poster session II

Superconducting Structures and Devices

P2-01

Josephson φ-device based on complex nanostructures with normal metal/ferromagnet bilayer . S.V. Bakurskiy1,2, N.V. Klenov1, T.Yu. Karminskaya2, A.A. Golubov3, M.Yu. Kupriyanov 2 1. Faculty of Physics, Moscow State University, Moscow, Russia. 2. Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 3. Faculty of Science and Technology, University of Twente, Enschede, Netherlands .

P2-02

Macroscopic quantum effects in transmission of signals along the superconducting microwave slotline. Towards quantum transmission lines M.A. Dresvyannikov, A.L. Karuzskii, A.V. Perestoronin, A.M. Tshovrebov, N.A. Volchkov, L.N. ZherikhinaP.N. Lebedev Physical Institute, RAS, Moscow, Russia.

P2-03

Manifestation of long-range triplet superconducting correlations in F1-SF1F2-F1 structures. T. Karminskaya1M. Kupriyanov1, A. Golubov21. MSU, Institute of Nuclear Physics, Moscow, Russia. 2. Institute of nanotechnology, University of Twente, Netherlands .

P2-04

Jitter in ballistic read-out circuit based on Josephson transmission line. I.I. Soloviev 1,2 , N.V. Klenov1,3, A.L. Pankratov1, E.V. Il’ichev4, L.S. Kuzmin1,5 1. Laboratory of Cryogenic Nanoelectronics, NNSTU, Russia. 2. D.V. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 3. Physics Faculty, Moscow State University, Moscow, Russia. 4. Institute of Photonic Technology, Jena, Germany 5. Chalmers University of Technology, Sweden .

P2-05

Noise in bi-SQUID. I. Soloviev 1 , N. Klenov2, A. Sharafiev2, V. Kornev2 1. Scobeltsyn Institute of Nuclear Physics, Moscow, Russia. 2. Moscow State University, Physics Department, Moscow, Russia .

 

Quantum Informatics

P2-06

Adequacy, completeness, and accuracy of quantum measurement protocols . Yu.I. Bogdanov, A.K. GavrichenkoInstitute of Physics and Technology, RAS, Moscow, Russia.

P2-0 7

Polarization quantum operations in an anisotropic medium with dispersion Yu . I. Bogdanov 1 A.A. Kalinkin 2,3 S.P. Kulik 4 E.V. Moreva 2,5 V.A. Shershulin 1,2,6 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. International Laser Center of Moscow State University, Moscow, Russia. 3. Zavoisky Physical-Technical Institute, RAS, Kazan, Russia. 4. Faculty of Physics, Moscow State University, Moscow, Russia. 5. National Research Nuclear University “MEPHI”, Moscow, Russia. 6. National Research University of Electronic Technology MIET, Moscow, Russia .

P2-0 8

Experimental study of echo effect in polarization transformations of qubits. Yu. Bogdanov 1 A. Kalinkin 2,3 S. Kulik 4 E. Moreva 2,5 V. Shershulin 1,2,6 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. International Laser Center of Moscow State University, Moscow, Russia. 3. Zavoisky Physical-Technical Institute RAS, Kazan, Russia. 4. Faculty of Physics, Moscow State University, Moscow, Russia. 5. National Research Nuclear University “MEPHI”, Moscow, Russia. 6. National Research University of Electronic Technology MIET, Moscow, Russia .

P2-09

Mathematical modeling of polarization echo in optically anisotropic media. Yu.I. Bogdanov1, A.A. Kalinkin2,3, S.P. Kulik4, E.V. Moreva2,5, V.A. Shershulin 1,2,6, L.V. Belinsky1,6 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. International Laser Center of Moscow State University, Moscow, Russia. 3. Kazan Physical-Technical Institute, RAS, Kazan Russia. 4. Faculty of Physics, Moscow State University, Moscow, Russia. 5. National Research Nuclear University “MEPHI”, Moscow, Russia. 6. National Research University of Electronic Technology MIET, Moscow, Russia .

P2-10

Quantum interferometer with compressed coherent states. A. Karuzskii1, A. Tskhovrebov1, V. Prijmachenko2, L. Zherikhina11. P.N. Lebedev Physical Institute, RAS, Moscow, Russia. 2. Moscow Institute of Physical Engineering .

P2-11

Tradeoff analysis of b allistic detector for Josephson qubits. N.V. Klenov1, A.V. Sharafiev1, V.K. Kornev1 Physics Faculty, Moscow State University, Moscow, Russia .

P2-12

Quantum error correction in Si double dot charge qubits. A. Melnikov1,2L. Fedichkin1,2,3 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. NIX, Moscow, Russia .

P2-13

Could we believe that the moon is there? A.V. Nikulov Institute of Microelectronics Technology, RAS, Chernogolovka, Russia .

P2-14

Measurement of charge and spin qubits in a transistor channel M. Rudenko, V. Vyurkov, S. Filippov, A. Orlikovsky Institute of Physics and Technology, RAS, Moscow, Russia .

 

Device Structures II

P2-15

Atomic force microscopy studies of ferroelectric and electrical properties in epitaxial BaTiO3/Pt heterostructures . A. Baturin1, A. Chouprik1, K. Bulakh1, A. Kuzin1, A. Zenkevich2, M. Minnekaev2 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 2. National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow, Russia.

P2-16

Formation of Ag clusters for resistive memory cells from thin film. A. Belov1, D. Gromov1, O. Pyatilova1, O. Sakharov2, A. Trifonov2 1. National Research University of Electronic Technology MIET, Moscow, Russia. 2. Scientific Research Institute of Physical Problems named after F.V.Lukin, Moscow, Russia .

P2-1 7

Memory cells on the basis of metal-insulator-semiconductor of structure with multilayer dielectric with same nanometer layers A.E. Berdnikov, A.A. Popov, A.A. Mironenko, V.D. Chernomordick, A.V. Perminov Yaroslavl Branch of Institute of Physics and Technology, RAS, Yaroslavl, Russia .

P2-1 8

A resistive switching effect with memristive behavior in HfxAl1-xOy layers grown by atomic layer deposition. A.A. Chouprik1, K.V. Egorov1, I.P. Grigal1, Yu.Yu. Lebedinskii2, A.M. Markeev 1, A.V. Zenkevich2 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 2. NRNU Moscow Engineering Physics Institute, Moscow, Russia .

P2-19

Atomic layer deposition of HfxAl1-xOy dielectric layers for memory devices. I.P. Grigal 1 , A.A. Chouprik 1 , K.V. Egorov 1 , Yu.Yu. Lebedinskii 2 , A.M. Markeev 1 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 2. NRNU Moscow Engineering Physics Institute, Moscow, Russia .

P2-20

Influence of heating on electrical properties and morphology of indium-doped Ge2Sb2Te5 thin films for phase change memory devices. P. Lazarenko1, S. Kozuykhin2, A. Sherchenkov1, A. Babich1, A. Vargunin2, O. Pyatilova1 1. National Research University of Electronic Technology , Moscow, Russia. 2. Kurnakov Institute of General and Inorganic Chemistry, RAS, Moscow, Russia .

P2-21

Effect of the moist porous silicon oxide layer on the electrical characteristics of memory cells. V. Levin, V. Mordvintsev, S. KudryavtsevYaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .

P2-22

Influence of thermocycling on the properties of Ge-Te system materials for application in nanoscale phase change memory cells A. Sherchenkov1, S. Kozyukhin2, M. Michailova1, A. Babich1, P. Lazarenko1 1. National Research University of Electronic Technology. 2. Kurnakov Institute of General and Inorganic Chemistry, RAS .

 

Lithography Techniques

P2-23

Formation of nanomask with 10-20 nm elements using self-organizing processes in diblock-copolymers films. M.A. Bruk1, E.N. Zhikharev2, V.A. Kalnov2, A.V. Spirin1, I.I. А mirov2 1. Karpov Institute of Physical Chemistry, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

P2-24

The new method of image formation by direct electron-beam etching of polymer resist . M.A. Bruk 1 , E.N. Zhikharev2, D.R. Streltsov1, V.A. Kalnov2, A.V. Spirin1 1. Karpov Institute of Physical Chemistry, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia.

P2-25

The charging of PMMA-film resist in electron beam lithography. E.N. Evstafjeva, M.A. Knjazev, E.I. Rau, A.A. Svintsov, A.A. Tatarintsev, S.I. ZaitsevInstitute of Microelectronic Technology and High Purity Materials, RAS, Chernogolovka, Russia .

P2-2 6

Micropattern formation of diamond films E.A. Il’ichev, A.E. Kuleshov, N.K. Matveeva, G.N. Petrukhin, R.M. Nabiev, G.S. RychkovF.V. Lukin State Research Institute of Physical Problems, Zelenograd, Russia .

 

Materials for Photonics and Optoelectronics

P2-2 7

Formation of buried Ge nanocrystals and Cr (Mn) disilicides in Si by combination of ion implantation and MBE methods . N.G. Galkin1, E.A. Chusovitin1, K.N. Galkin1, S.A. Dotsenko1, S.V. Vavanova1 , R.I. Batalov2, R.M. Bayazitov2 1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok, Russia. 2. Kazan Physical-Technical Institute, Kazan, Russia .

P2-28

Electroluminescence and photovoltage properties of Si-p/ b -FeSi2 NC/Si-p/Si(100)-n mesa-diodes N.G. Galkin1, E.A. Chusovitin1, D.L. Goroshko1, A.V. Shevlyagin1, T.S. Shamirzaev 2 1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok, Russia. 2. Kazan Physical-Technical Institute, Kazan, Russia .

P2-29

Formation and properties of Ca silicide films and Si-Ca silicide-Si double heterostructures on Si(111) substrate . N.G. Galkin1, S.A. Dotsenko1, D.V. Bezbabny2, K.N. Galkin1, D.L. Goroshko1, R. Kudrawiec3, E. Zielony3, A. Misiewicz3 1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok, Russia. 2. Amur State University, Blagoveshchensk, Russia. 3. Institute of Physics, Wroclaw State technical University, Wroclaw, Poland .

P2-30

Hydro chemical deposition method nanofilms ZnS1-xSex M.A. Jafarov , E.F. Nasirov, S.A. Jahangirova Baku State University, Baku, Azerbaijan .

P2-31

Solar sell on the bazis heterojunctions p-CdS/p-CdTe/CdZnS, obtained by chemical deposition M.A. Jafarov , E.F. Nasirov, S.A. Jahangirova Baku State University, Baku, Azerbaijan .

P2-32

STM study of single tetrapod-shaped CdTe and CdTe/CdSe nanocrystal A.S. Trifonov 1 , R.B. Vasiliev 2 , I.S. Ezubchenko 3 , M.S. Sokolikova 2 , D.R. Britov 4 , D.E. Presnov 1 , O.V. Snigirev 4 1. Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russia. 2. Department of Materials Science, Moscow State University, Moscow, Russia. 3. National Research Centre «Kurchatov Institute», Moscow, Russia. 4. Faculty of Physics, M.V.Lomonosov Moscow State University, Moscow, Russia .

P2-33

Luminescent properties of carbon incorporated porous silicon oxide. A. Vasin1, S. Gordienko1, A. Rusavsky1, A. Nazarov1, V.S. Lysenko1, Yu. Piryatinski2, I. Blonsky2, E. Makila3, J.Salonen3, S. Prucnal4, L. Rebohle 4, W. Skorupa4 1. Lashkaryov Institute of Semiconductor Physics, Kiev, Ukraine. 2. Institute of Physics, Kiev, Ukraine. 3. Department of Physics, University of Turku, Turku, Finland. 4. Institut fur Ionenstrahlphysik und Materialforschung, Dresden, Germany .

 

Electronic Materials and Thin Films

P2-34

Germanium substrates for molecular-beam epitaxy I.D. Burlakov, A.L.Sizov, N.I. Iakovleva, E.D. Korotaev, A.E. Mirofianchenko State Scientific Center of Russian Federation “RD&P Center ORION”, Moscow, Russia .

P2-35

Direct wafer bonding of SiGe and Si crystalline wafers for high-power bipolar devices and SGOI. I.V. Grekhov1, L.S. Kostina1, T.S. Argunova1,2, E.I. Belyakova1N.M. Shmidt 1, J.H. Je2 1. Ioffe Physical Technical Institute, RAS, Petersburg, Russia2. Pohang University of Science and Technology, Pohang, Republic of Korea .

P2-3 6

Copper germanium alloys formation by the low temperature atomic hydrogen treatment . A. Kazimirov1, E. Erofeev2, V. Kagadei21. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia. 2. Research and Production Company “Micran”, Tomsk, Russia .

P2-3 7

Fabrication and structural study of InxGa1-xAs layers on porous GaAs(001) substrates A. Lomov1, J. Grym2, D. Nohavica2, E. Hulicius3, J. Pangrác3, A. Orehov 4, A. Vasiliev4 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Institute of Photonics and Electronics of Academy of Science of Czeh Republic, Prague, Czech Republic. 3. Institute of Physics of Academy of Science of Czeh Republic, Prague, Czech Republic. 4. National Research Centre “Kurchatov Institute”, Moscow, Russia .

P2-38

Conductive Langmuir-Blodgett films based on poly (p-phenylenevinylene) derivates N.K. Matveeva, E.A. Ilichev Federal State Unitary Enterprise “Research Institute of Physical Problems named after F.V.Lukin”, Zelenograd, Russia .

P2-39

Features of formation of high-k dielectric layer in the W/ultrathin HfO2/Si (100) structures under annealing. V. Rudakov, E. Bogoyavlenskaya, Yu. Denisenko, V. NaumovYaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .

P2-40

Temperature oscillations in a silicon wafer under constant power of incoherent irradiation by heating lamps in a thermal chamber of RTP set up . V. Rudakov, A. Kurenya, V. Ovcharov, V. PrigaraInstitute of Physics and Technology, Yaroslavl Branch, RAS, Yaroslavl, Russia.

P2-41

Hopping conductivity in Ge-SiOx-Si structures with Ge nanoclusters. S.V. Kondratenko1, Yu.N. Kozyrev2, M.Yu. Rubezhanska2, V.S. Lysenko3Y.V. Gomeniuk3 1. Taras Shevchenko national University of Kyiv, Ukraine. 2. Chuiko Institute of Surface Chemistry, Kyiv, Ukraine. 3. V. Lashkarev Institute of Semiconductor Physics, NAS of Ukraine, Kiev, Ukraine .

Simulation and Modeling II

P2-42

Modeling the influence of internal mechanical stresses on spatial distribution of oxygen during its precipitation in silicon. R. Goldstein1, T. Makhviladze2M. Sarychev2 1. Institute for Problems in Mechanics, RAS, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

P2-43

Modeling the electromigration and mechanical stresses in conductor lines containing impurities. T. Makhviladze, M. SarychevInstitute of Physics and Technology, RAS, Moscow, Russia .

P2-44

The numerical model of simplest FIB on ions of rare gases for nano diagnostics and nano patterning. V.A. Zhukov1, N.V. Badenko2, P.V. Shpartko2 1. St. Petersburg Institute of Information Science and Automation, RAS, St. Petersburg, Russia. 2. St. Petersburg State Polytechnic University , St. Petersburg, Russia .

P2-45

Molecular dynamics simulations of the low energy Ar ion-plasma sputtering of copper nanostuctures. A. Kupriyanov, O. Trushin, I. AmirovYaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .

P2-4 6

Mechanisms of strain relief in Cu/Ni(100) heteroepitaxy O. Trushin1, T. Ala-Nissila2, S-C. Ying3, E. Granato4 1. Yaroslavl Branch of the Intitute of Physics and Technology, RAS, Yaroslavl, Russia. 2. Aalto University, Helsinki, Finland. 3. Brown University, Providence, USA. 4. Instituto National de Pesquisas Espaciais, Sao Jose dos Campos, SP Brasil .

P2-4 7

Modeling of profile evolution at the low-energy ion sputtering in Ar plasma A.S. Shumilov, I.I. AmirovYaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .

Plasma and Ion Beam Processing

P2-48

Formation of silicon oxide layer on the surface of mono-Si wafer by means of ion beam irradiation B. Gurovich, K. Prikhodko, A. Taldenkov, D. Komarov, L. Kutuzov National Research Center “Kurchatov Institute”, Moscow, Russia .

P2-49

The quantum-size Si dots formed in PECVD Si/SiO2multilayers by irradiation with swift heavy ions. G. Kamaev1,2, S. Cherkova1,2, A. Antonenko1,2, G. Kachurin1, A. Gismatulin1D. Marin1,2, V. Volodin1,2, A. Cherkov1,2, V. Skuratov3 1 A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia; 2Novosibirsk State University, Novosibirsk, Russia; 3Joint Institute for Nuclear Research, Dubna, Russia .

P2-50

The study of nanostructures formation on AlSi thin film surface under ion-plasma sputtering V. Bachurin, I. Amirov, M. Izyumov, V. Naumov, S. Simakin Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .

P2-51

Efficiency of fast neutral particle beam sources based on gas-phase charge exchange processes V.P. KudryaInstitute of Physics and Technology, RAS, Moscow, Russia .

Micro- and Nanoelectromechanical Systems and Sensors

P2-52

Piezoelectric generator with filled space between the ZnO nanowires D.G. Gromov1, A.M. Kozmin1, M.U.Nazarkin1, S.P.Timoshenkov1, S.A.Gavrilov1, A.I.Kozlitin2 1 National Research University of Electronic Technology, Moscow, Russia. 2Joint research center “Synchrotron”, Moscow, Russia .

P2-53

Simulation of ZnO piezocantilever deflection for a contact AFM E. Gusev, Yu. Eroshina Taganrog Institute of Technology – Southern Federal University, Taganrog, Russia .

P2-54

NO2, CO and CO2 gas sensor based on magnetron deposited n- and p-type ZnO films E. Gusev, A. Mikhno, V. Gamaleev, O. Mironenko Taganrog Institute of Technology – Southern Federal University, Taganrog, Russia .

P2-55

The mode matching technology for MEMS gyroscope with mutually spaced eigenfrequences O. Morozov1, A. Postnikov, I. Kozin1, A. Soloviev2, A. Tarasov2 1. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia. 2. Federal state Unitary Enterprise “Center for Ground-Based Space Infrastructure Facilities Operation”, Moscow, Russia .

P2-5 6

Principal physical and technological problems and technical solutions for creating a new generation of high-temperature microelectromechanical SOIMT strain sensors. L. Sokolov1, N. Parfenov2, S. Igochin31. Branch of MAI (TU) “Strela”, Zhukovsky, Russia. 2. MAI (TU), Moscow, Russia. 3. JSC “Interlab”, Moscow, Russia .

P2-5 7

MEMS angular rate sensors and roll sensors. A. Timoshenkov, S.M. Naing, D. Daniltsev, V. Kalugin National Research University of Electronic Technology, Department of Microelectronics, Moscow, Russia .

P2-58

Technology development for the creation of conformal multilayer wiring boards based on polymers . A. Titov, Yu. Dolgovykh, K. Tikhonov, S. TimoshenkovNational Research University of Electronic Technology, Department of Microelectronics, Moscow, Russia.

 

Oral Presentations | Posters

Download in Microwoft Word format (.doc, 300 KB)

Monday, October 1st, 2012

9.00 – Registration & Accommodation

13.00-14.00 Lunch

Conference Hall

Special Session. Presentations of Hi-Tech Companies

16.00

S1-01

SemiTEq technological equipment for nanoelectronics . S.I. Petrov1, A.N. Alexeev1, D.M. Krasovitsky2, V.P. Chaly21. SemiTEq JSC, Saint-Petersburg, Russia. 2. Svetlana-Rost JSC, Saint-Petersburg, Russia.

16.20

S1-02

Structural diagnostics, elemental and characteristic analysis of modern micro- and nanosystems using analytical SEM/FIB tools A. Tagachenkov1, E. Zenova1, Y. Anufriev1, V. Dubrovinskiy2 1. Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences, Moscow, Russia. 2. JSC “NPO Sernia”, Moscow, Russia .

16.40

S1-03

Ultra High Resolution AFM Imaging . M. MininINTERTECH Corp., Moscow, Russia.

17.00

S1-04

Oxford Instruments Plasma Technology equipment for the micro- and nano- engineering of materials for semiconductor, optoelectronics, MEMS and other applications K. Kuvaev, A. KryninTechnoinfo Limited, Moscow, Russia.

17.20

S1-05

Novel Vion Plasma FIB system for nano- and micro- electronics application by FEI Company . A. Poletaev, I. BredikhinTechnoinfo Limited, Moscow, Russia.

17.40

S1-06

Modern semiconductor equipment for metrology and failure analysis by Hitachi High Technologies . E. Kremer JSC InterLab, Moscow, Russia .

18.00 Welcome Party

19.00 Dinner

Tuesday, October 2nd, 2012

8.15 Breakfast

Conference Hall

8.50. WELCOME REMARKS

E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow

A.A. Orlikovsky, Program Committee Chair, IPT RAS, Moscow

 

Plenary Session I

Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia

9.00

L1-01

INVITED: New materials and structures in future ULSI generation . A. Orlikovsky, V. Vyurkov Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia .

9.40

L1-02

INVITED: New devices and materials for ultra low power operation F. Balestra Sinano Institute, IMEP-Minatec (CNRS-Grenoble INP, UJF), France .

10.20

L1-03

INVITED: SiGe and Ge: selective epitaxial growth and application in advanced MOS devices. A. Hikavyy, B. Vincent, W. Vanherle, J. Dekoster, L. Witters, H. Bender, A. Thean, R. Loo. IMEC, Leuven, Belgium.

11.00

L1-04

INVITED: Bumpless interconnects technology for wafer-based three-dimensional integration (3DI). T. OhbaInstitute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo.

11.40-12.00 Coffee break. Winter garden

Conference Hall

Plenary Session II. Quantum Informatics I

Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia

12.00

qL-01

INVITED: Dressed state amplification by a superconducting qubit. G. Oelsnera, P. MachaaE. Ilicheva, U. Huebnera, H.-G. Meyera, M. Grajcarb, O. Astafievca Institute of Photonic Technology, Jena, Germany. bDepartment of Experimental Physics, Comenius University, Bratislava, Slovakia, cNEC Nano Electronics Research Laboratories. Tsukuba, Ibaraki, Japan .

12.30

qL-02

INVITED: Quantum correlations: entanglement and discord in the simplest physical systems. E.B. Fel’dman, E.I. Kuznetsova, M.A. Yurishchev, A.I. Zenchuk. Institute of Problems of Chemical Physics, Chernogolovka, Russia .

13.00

qL-03

INVITED: Fingerprinting based algorithms for quantum branching programs. F. Ablayev1,21. Institute for Informatics of Tatarstan Academy of Sciences, Kazan, Russia. 2. Kazan Federal University, Kazan, Russia .

13.30

qL-04

INVITED: Mathematical modeling of quantum noise and the quality of hardware components of quantum computers. Yu.I. Bogdanov 1 , A.Yu. Chernyavskiy1, A.S. Holevo2, V.F. Luckichev1, S.A. Nuyanzin1,3, A.A. Orlikovsky 11 Institute of Physics and Technology, Russian Academy of Sciences. 2 Steklov Mathematical Institute, Russian Academy of Sciences. 3 National Research University of Electronic Technology MIET .

 

14.00-14.40 Lunch

Conference Hall

Session 1. Micro- and Nanodevices I

Session Chairman: Vladimir Vuyrkov, Institute of Physics and Technology, RAS, Russia

14.40

O1-01

INVITED: Qualification of deep-submicron OTP poly-fuse memory. N. Belova 1 , D. Allman1, S. Tibbitts2 . 1. ON Semiconductor, Phoenix, AZ, USA. 2. Jet City Electronics Inc., Seattle, WA, USA.

15.10

O1-02

Recording of information in nanostructures of transition metal silicides . A.S. Sigov1, B.M. Darinskiy3, L.A. Bityutskaya2, O.V.Ovchinnikov2, M.S.Smirnov2, M.V.Grechkina2, A.P.Lazarev3, G.A.Veligura4, A.V.Tuchin3, E.V.Bogatikov 3 1. MIREA,Moscow, Russia. 2. VSU, Voronezh, Russia. 3. Rosbiokvant Ltd., Voronezh, Russia. 4. Scientific Research Institute of Electronic Engineering, Voronezh, Russia .

15.30

O1-03

Study of the resistive switching mechanism in Pt/ZrOx/HfO2/p++-Si stacks by hard X-ray photoelectron spectroscopy Yu. Matveyev 1 , A. Zenkevich1, Yu. Lebedinskii1, S. Thiess2, W. Drube2 1. NRNU “Moscow Engineering Physics Institute”, Moscow, Russia. 2. Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany.

15.50

O1-04

Switching of domains in ferroelectric domain boundary. B.M. Darinskiy1, A.P. Lazarev2, A.S. Sigov31. VSU, Voronezh, Russia. 2. Rosbiokvant Ltd., Voronezh, Russia. 3. MIREA, Moscow, Russia .

 

Auditorium A

Session 2. Quantum Informatics II

Session Chairman: Sergey Kulik, Moscow State University, Russia

14.40

q1-01

Quantum correlations (entanglement, discord), quantum phase transitions, and magnetic toroidal states in an anti-ferromagnetic XXZ chain of spins S= ? in the presence of an inhomogeneous transverse magnetic field. A.A. Kokin Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

15.10

q1-02

INVITED: Quantum and classical correlations in high temperature dynamics of two coupled large spins. V.E. ZobovL.V. Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, Russia .

15.40

q1-03

Quantum computer on multi-atomic ensembles in quantum electrodynamic cavity. F.M. Ablayev 1,2 , S.N. Andrianov 1,2,3 , S.A. Moiseev 1,2,3 , A.V. Vasiliev 1,2 1. Institute for Informatics of Tatarstan Academy of Sciences, Kazan, Russia. 2. Kazan Federal University, Kazan, Russia. 3. Kazan Physical and Technical Institute, Kazan, Russia

16.00

q1-04

Quantum addressing in photon echo based quantum random access memory S.A. Moiseev 1,2 , E.S. Moiseev2 . 1. Kazan Physical-technical Institute of Russian Academy of Sciences, Kazan, Russia. 2. Kazan Federal University, Kazan, Russia .

 

 

Auditorium B

Session 3. Simulation and Modeling I

Session Chairman: Igor Abramov. Belarus State University of Informatics and Radioelectronics, Minsk, Belarus

14.40

O1-05

T heoretical study of terahertz plasma instability in asymmetric double-grating-gate transistor structures A. Satou 1 H. Shida1 T. Otsuji1, V.V. Popov2 . 1. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan. 2. Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences, Saratov, Russia .

1 5. 00

O1-06

Voltage-controlled surface plasmon-polaritons in double-graphene structures D. Svintsov1 , I. Semenikhin1, V. Vyurkov1, V. Ryzhii2, T. Otsuji2 . 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. 2. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan .

15.20

O1-07

Advanced impact ionization current model for MOS devices including heat effects T. Krupkina, D. Rodionov National Research University ‘MIET’ , Moscow, Russia .

15.40

O1-08

Electric instability in GaAs/AlxGa1-xAs superlattices with barrier layers non-transparent for tunneling. V. Gergel` 1 , G.Galiev1, E. Il`ichev2, A. Verhovtseva1, N. Gorshkova1, A. Zelenyi1, I. Altu ê hov1, S. Paprotskiy1 1. Kotel`nikov Institute of Radio Engineering, RAS, Moscow, Russia. 2. National Research University of Electronic Technology (MIET), Moscow, Russia .

16.00

O1-09

Ionization energy oscillations in metallic and semiconducting nanotubes of ultra small diameters. A. Ganin, E. Bormontov, L. Bitytskaya Voronezh State University, Voronezh, Russia .

16. 20

O1-10

The brain is a nanoelectronic object. I.I. AbramovBelarusian State University of Informatics and Radioelectronics, Minsk, Belarus .

16.40-17.00 Coffee break. Winter garden.

 

Conference Hall

Session 4. Superconducting Structures and Devices

Session Chairman: Mikhail Kupriyanov, Skobelitsin Institute of Nuclear Physics, Lomonosov Moscow State University, Russia

17 .00

O1-11

Boundary conditions for the contact between normal metal and multiband superconductors with unusual types of pairing I. Devyatov, A. Burmistrova Lomonosov Moscow State University, Skobeltsin Institute of Nuclear Physics, Moscow, Russia .

17.20

O1-12

New method for calculation of the electron transport in heterostructures with different unusual types of superconducting pairing A. Burmistrova, I. Devyatov Lomonosov Moscow State University, Skobeltsin Institute of Nuclear Physics, Moscow, Russia .

17.40

O1-13

Superconducting quantum arrays as electrically small antennas I. Soloviev 1 , N. Kolotinsky2, N. Klenov2, A. Sharafiev2, V. Kornev2, O. Mukhanov3 1. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 2. Physics Department, Moscow State University. 3. HYPRES, Inc., Elmsford, USA .

18.00

O1-14

Combined magnetic field sensor with superconductive magnetic field concentrator. L.P. IchkitidzeNational Research University of Electronic Technology “MIET”, MIET, Zelenograd, Moscow, Russia .

18.20

O1-15

Comparative parameters of superconductor-based sensors of weak magnetic fields. L.P. Ichkitidze1, M.L. Gavryushina21. National Research University of Electronic Technology “MIET”, Zelenograd, Russia. 2. Bazovye Technologii JSC, Moscow, Russia .

 

Auditorium A

Session 5. Quantum Informatics III

 

Session Chairman: Sergey Moiseev, Kazan Physical and Technical Institute, RAS, Kazan, Russia

17.00

q1-05

INVITED: Spatial structure of two-photon and thermal light. S.P. Kulik, S.S. Straupe, I. Bobrov. Faculty of Physics, Moscow M.V. Lomonosov State University, Moscow, Russia .

17.30

q1-06

Biphoton spectrum control N. Borschevskaya1, I. Dyakonov1K. Katamadze1,2, S. Kulik1, A. Paterova 1 1. Moscow State University, Moscow, Russia, 2. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia .

17.50

q1-07

Quantization effects observed in asymmetric rings. V.L. Gurtovoi, A.I. Ilin, A.V. Nikulov, V.A. Tulin . Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow District, Russia .

18.10

q1-08

Quantum communication with Bose-Einstein condensates A.N. Pyrkov , T. Byrnes National Institute of Informatics, Tokyo, Japan .

18.30

q1-09

Effect of image charges on a space qubit evolutionV. Vyurkov, M. Rudenko, S. Filippov. Institute of Physics and Technology, RAS, Moscow, Russia .

 

Auditorium B

Session 6. Simulation and Modeling II

Session Chairman: Vladimir Vuyrkov, Institute of Physics and Technology, RAS, Russia

17.00

O1-16

A dynamic simulation model for functionally-integrated injection laser-modulator. B. Konoplev1E. Ryndin2, M. Denisenko11. Taganrog Institute of Technology – Southern Federal University, Taganrog, Russia. 2. Souther Scientific Center of RAS, Rostov-na-Donu, Russia .

17.20

O1-17

Computationally efficient methods for optical simulation of solar cells and their applications. M. Zanuccoli1, I. Semenikhin2, V. Vyurkov2, E. Sangiorgi1, C. Fiegna11. ARCES-DEI University of Bologna & IUNET, Cesena (FC), Italy. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

17.40

O1-18

Optical absorption of silicon layer with incorporated nano-voids and metal nanoparticles V. ShautsovaP. Gaiduk . Belarusian State University, Minsk, Belarus.

18.00

O1-19

Simulation of resonant tunneling devices based on different materials . I.I. Abramov, N.V. Kolomejtseva, I.A. Romanova, A.G. KlimovichBelarusian State University of Informatics and Radioelectronics, Minsk, Belarus.

18.20

O1-20

Electronic structure of magnetic nanoclusters of cobalt and nickel silicides. A. Tuchin 1, L. Bityutskaya1, A. Lazarev2, A. Sigov31. Voronezh State University, Voronezh, Russia. 2. “Rosbiokvant” Ltd.,Voronezh, Russia. 3. MIREA, Moscow, Russia .

 

19.00 Dinner

 

Wednesday, October 3rd 2012

8.15 Breakfast

 

Conference Hall

Plenary Session III

Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia

09.00

L2-01

INVITED: Graphene-based infrared and terahertz detectors: Concepts, features, and comparison V. Ryzhii 1 , T. Otsuji1, M. Ryzhii2, V. Mitin3, M.S. Shur4 . 1 Tohoku University, Sendai, Japan. 2 University of Aizu, Aizu-Wakamatsu, Japan. University at Buffalo, SUNY, Buffalo, USA, 4 Rensselaer Polytechnic Institute, Troy, USA .

09.40

L2-02

INVITED: Terahertz-wave generation using graphene – toward the creation of graphene injection lasers T. Otsuji 1 , A. Satou1, S.A. Boubanga Tombet1, M. Ryzhii2, V. Ryzhii11. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan. 2. Computational Nano-Electronics Laboratory, University of Aizu, Japan .

10.20

L2-03

INVITED: Perspective applications for 3C-SiC on silicon technology. F. Iacopi, L. Wang, G. Walker, L. Hold, B. Cunning, J. Han, P. Tanner, A. Iacopi, S. Dimitrijev. Queensland Micro and Nanotechnology Facility, Griffith University, Australia .

 

11.00 – 11.20 Coffee break

 

Conference Hall

Session 7. Advanced Lithography

Session Chairman: Vladimir Lukichev, Institute of Physics and Technology, RAS, Russia

11.20

O2-01

INVITED: Carbone nanotubes and nanostructures ? multifunctional materials for emission electronics. Yu.V. GulyaevKotel’nikov Institute of Radio Engineering and Electronics, RAS, Russia.

11.50

O2-02

INVITED: Research activity in field of Projection XEUV Lithography in IPM RAS. N.N. Salashchenko, N.I. Chkhalo. Institute for Physics of Microstructures, RAS, Russia .

12.20

O2-03

Next Generation Lithography – fundamental problems S.I. Zaitsev IMT RAS, Chernogolovka, Russia .

12.40

O2-04

NANOMAKER – the electron lithography tool for ultimate resolution. B.N. Gaifullin1, I.S. Stepanov1, A.A. Svintsov2, S.I. Zaitsev21. Interface Ltd, Moscow, Russia. 2. Institute of Microelectronics Technology, RAS , Chernogolovka, Russia .

 

Auditorium A

Session 8. Quantum Informatics IV

Session Chairman: Leonid Fedichkin, Institute of Physics and Technology, RAS , Moscow, Russia

11.20

q2-01

Quantum information and spectroscopy of cold Rydberg atoms. I.I. Ryabtsev, I.I. Beterov, D.B. Tretyakov, V.M. Entin, E.A. Yakshina. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia .

11.40

q2-02

Creating a single-atom array for quantum computation using Rydberg blockade in an atomic ensemble. D.B. Tretyakov , I.I. Beterov, V.M. Entin, E.A. Yakshina, and I.I. Ryabtsev. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia .

12.00

q2-03

Integrated diamond nanostructures for quantum informatics. V . P Popov 1 L . N Safronov 1 V . A Antonov 1 S . N Podlesnyi 1 A . V Shishaev 1 I . I Ryabtsev 1 N Kupriyanov 2 Yu . N Pal  yanov 2 1. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia. 2. Sobolev Institute of Geology and Mineralogy, SB RAS, Novosibirsk, Russia .

12.20

q2-04

Color centers in nanodiamonds of different origin. I.I. Vlasov1 , V.G. Ralchenko1, O. Shenderova2, A.A. Shiryaev3, A.A. Khomich1, V.S. Sedov1, M.S. Komlenok1, V.S. Pavelyev4,5, K.N. Tukmakov5, S. Turner6, F. Jelezko 7, J. Wrachtrup8, V.I. Konov1General Physics Institute, RAS, Moscow, Russia. 2 International Technology Centre, Raleigh, USA. 3 Institute of Physical Chemistry, RAS, Russia. 4Image Processing Systems Institute RAS, Samara, Russia. 5Samara State Aerospace University, Samara, Russia. 6 EMAT, University of Antwerp, Antwerpen, Belgium. 7Institute for Quantum Optics, Ulm University, Ulm, Germany. 8Physical Institute and Research Center SCOPE, Stuttart University, Stuttgart, Germany .

12.40

q2-05

Quantum register based on structured diamond waveguide with NV centers. A.V. Tsukanov, I.Yu. Kateev, A.A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Science, Moscow, Russia .

 

 

Auditorium B

Session 9. Workshop Silicon-on-Insulator I

Session Chairmen: Alexander Orlikovsky, Institute of Physics and Technology, RAS, Russia

11.20

W2-01

INVITED: Random telegraph noise diagnostics of nanowire SOI MOSFETs. A.N. Nazarov1, I. Ferain2, R. Yu2, A. Kranti2, P. Razavi21. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kiev, Ukraine. 2. Tyndall National Institute, Cork, Ireland .

11.45

W2-02

INVITED: SOI structure with Si-nanoclusters embedded in the oxide layer prepared by low-dose co-implantation. V. Litovchenko, B. Romanyuk, V. Ìå lniê , O. Oberemok, V. Popov, A. Sarikov. V. Lashkarev Institute of Semiconductor Physics, NAS of Ukraine, Kiev, Ukraine .

12.10

W2-03

Quantum noise in field-effect nanotransistors. V. Vyurkov, S. Filippov, I. Semenikhin, A. OrlikovskyInstitute of Physics and Technology, RAS, Moscow, Russia .

12.30

W2-04

Revision of interface coupling in ultra-thin body SOI MOSFETs. T. Rudenko1, A. Nazarov1, V. Kilchytska2, D. Flandre21. Institute of Semiconductor Physics, National Academy of Ukraine, Kyiv, Ukraine. 2. ICTEAM Institute, Universite catholique de Louvain .

12.50

W2-05

Noise characteristics of nanoscaled SOI MOSFETs. N. Lukyanchikova1, N. Garbar1V. Kudina1, A. Smolanska1, E. Simoen2, C. Claeys2,3 1. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kiev, Ukraine. 2. IMEC, Leuven, Belgium. 3. KU Leuven, Belgium .

13.10-14.00 Lunch

 

Conference Hall

Session 10. Workshop Silicon-on-Insulator II

Session Chairmen: Alexey Nazarov , Institute of Semiconductor Physics, NASU, Kyiv, Ukraine

14.00

W2-06

INVITED: Threshold voltage of advanced MOSFETs: Physical criteria and experimental extraction methods. T. Rudenko1, A. Nazarov1, V. Kilchytska2, D. Flandre21. Institute of Semiconductor Physics, National Academy of Ukraine, Kyiv, Ukraine. 2. ICTEAM Institute, Universite catholique de Louvain .

14.30

W2-07

Electrical characterization of high-k gate dielectrics for future CMOS technology. Y.Y. Gomeniuk 1 , Y.V. Gomeniuk1, A.N. Nazarov1, I.P. Tyagulskii1, V.S. Lysenko1, K. Cherkaoui 2, S. Monaghan2, P.K. Hurley21. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kiev, Ukraine. 2. Tyndall National Institute, University College Cork, Lee Maltings, Ireland .

1 4. 50

W2-08

The mobility models for TCAD simulation of extremely thin nanoscale SOI MOSFETs Y. Chaplygin, A. Krasjukov, T. Krupkina, I. Titova National Research University of Electronic Technology, Moscow, Russia .

15.10

W2-09

SOI CMOS RadHard SRAM 256K, 1M, and 4M N. Alieva1, A. Belous1, V. Bondarenko2, L. Dolgyi2, E. Lozitskyi1, S. Soroka 1, G. Usov1, A. Turzevich1, S. Shvedov1 1. “Integral” Join Stock Company, Minsk, Belarus. 2. Belarussian State University of Informatics and Radioelectronics, Minsk, Belarus .

15.30

W2-10

Carrier mobility in SOI layers with bonded interface. O.V. Naumova, B.I. Fomin, V.P. Popov Institute of Semiconductor Physics, RAS, Novosibirsk, Russia .

 

Auditorium A

Session 11. Quantum Informatics V

Session Chairman: Eduard Fel’dman, Institute of Problems of Chemical Physics, RAS, Russia

14.00

q2-0 6

INVITED: Charge pumping with Coulomb blockade devices Yu.A. Pashkin Physics Department, Lancaster University, United Kingdom, NEC Smart Energy Research Laboratories and RIKEN Advanced Science Institute, Tsukuba, Japan .

14.30

q2-07

Quantum discord in Materials with electron and nuclear spins. M.A. YurishchevInstitute of Problems of Chemical Physics, RAS, Chernogolovka, Russia .

14.50

q2-08

On the time-optimal implementation of quantum Fourier transformation for qudits represented by quadrupole nucleus. V.P. Shauro, V.E. Zobov. L. V. Kirensky Institute of Physics, Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, Russia .

15.10

q2-09

A spin chain under the pulse conditions as a quantum data channel. M.M. KutcherovInstitute of Space and Information Technology, Siberian Federal University, Krasnoyarsk, Russia .

15.30

q2-1 0

A unitary invariant measure of quantum correlations. A.I. Zenchuk. Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia .

15.50

q2-11

Quantum correlations in a nanopore filled with a gas of spin-carrying molecules (atoms) in a strong magnetic field. E.B. Fel’dman, E.I. Kuznetsova, M.A. Yurishchev. Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia .

 

Auditorium B

Session 12. Magnetic Micro- and Nanostructures

Session Chairman: Mikhail Chuev, Institute of Physics and Technology, RAS, Russia

14.00

O2-05

INVITED: On the thermodynamics of antiferromagnetic nanoparticles and macroscopic quantum effects observed by M o ssbauer spectroscopy. M.A. ChuevInstitute of Physics and Technology, RAS, Moscow , Russia .

14.30

O2-06

Characterization of nanoparticles in a media using multilevel models of magnetic dynamics I. Mischenko 1 , M. Chuev 1 , V. Cherepanov 2 , M. Polikarpov 2 , V. Panchenko 2 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. National Research Centre “Kurchatov Institute”, Moscow, Russia .

14.50

O2-07

The effect of technological factors on micromagnetic states of magnetic nanostructures O.S. Trushin 1 , V.V. Naumov1, V.F. Bochkarev1, N. Barabanova2, V.A. Paporkov2 1. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia. 2. Yaroslavl State University, Yaroslavl, Russia .

15.10

O2-08

Magnetoresistance of multilayer ferromagnetic nanoparticles S.N. Vdovichev, B.A. Gribkov, S.A. Gusev, A.Yu. Klimov, V.L. Mironov, I.M. Nefedov, V.V. Rogov, A.A. Fraerman, I.A. Shereshevskii Institute for Physics of Microstructures, RAS, Nizhniy Novgorod, Russia .

15.30

O2-09

Magnetic logical cells based on domain wall pinning effects in ferromagnetic nanowire-nanoparticles systems V.L. Mironov , O.L. Ermolaeva, E.V.Skorohodov, A.Yu. Klimov Institute for Physics of Microstructures, RAS, Nizhniy Novgorod, Russia .

15.50

O2-10

Field-induced transitions in ferrimagnetic chain of spins: stability of ferromagnetic and antiferromagnetic phases. M. KostyuchenkoYaroslavl State Technical University, Yaroslavl, Russia .

16.10-16.30 Coffee break

16.30-18.30 Entresol. POSTER SESSION I

Bottom hall. EXHIBITION

19.00 Dinner

 

Thursday, October 4th 2012

08.15 Breakfast

 

Conference Hall

Session 13 Micro- and Nanodevices I

Session Chairman: Vladimir Vuyrkov, Institute of Physics and Technology, RAS, Russia

9 .00

O3-01

Current state and new prospects of semiconductor infrared photoelectronics V. Ponomarenko1,2, A. Filachev11. R&P Association “Orion”, Moscow, Russia. 2. MIPT, Dolgoprudny, Russia .

9.20

O3-02

Silicon nanowire field effect transistor with highly doped leads S. Amitonov 1 , D. Presnov1,2, K. Rudenko3, V. Rudakov3, V. Krupenin1 1. Laboratory of Cryoelectronics, Moscow State University, Moscow, Russia. 2. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 3. Institute of Physics and Technology, RAS, Moscow, Russia .

9.40

O3-03

Electronic band alignment and electron transport in Cr/BaTiO3/Pt ferroelectric tunnel junctions A. Zenkevich 1 , M. Minnekaev 1 , Yu. Matveyev 1 , Yu. Lebedinskii 1 , K. Bulakh 2 , A. Chouprik 2 , A. Baturin 2 , S. Thiess 2 , W. Drube 2 1. National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany .

1 0. 00

O3-04

A gold free fully copper metalized GaAs pHEMT for the high frequency applications. E. Erofeev 1 , V. Kagadei1, A. Kazimirov21. Research and Production Company “Micran”, Tomsk, Russia. 2. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia .

 

Auditorium A

Session 14. Metrology and Characterization

Session Chairman: Konstantin Rudenko, Institute of Physics and Technology, RAS, Russia

09.00

O3-05

Measurement of thickness of a layer of natural silicon oxide being on a test relief pitch structure, created on a substrate of monocrystalline silicon. M.N. Filippova,b,c, V.P. Gavrilenkoa,cA.A. Kuzina,c, A.Yu. Kuzinc, A.A. Kuzmina,c, V.B. Mityukhlyaeva, A.V. Rakova, P.A. Toduaa,c, A.V. Zablotskiya,c a Center for Surface and Vacuum Research, Moscow, Russia; b N.S. Kurnakov Institute of General and Inorganic Chemistry, Moscow, Russia; cNational Research University “Moscow Institute of Physics and Technology”, Dolgoprudny, Moscow Region, Russia . /p>

09.20

O3-06

Characterization of graphene layers grown using Ni/a-SiC bi-layer as a precursor. A.V. Vasin1, S.A. Gordienko1, P.M. Lytvyn1, V.V. Strelchuk1, A.S. Nikolaenko 1, A.N. Nazarov1, A.V. Rusavsky1, V.S. Lysenko1, V. Popov21. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kiev, Ukraine. 2. Institute of Rzhanov Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia .

9.40

O3-07

Characterization of semiconductor heterostrucrures using Dynamic Secondary Ion Mass Spectrometry B. Ber 1,2 , A. Merkulov 3 1. A.F. Ioffe Physical-Technical Institute, RAS, St Petersburg, Russia; 2. Center of Multi-User Equipment “Material Science and Characterization for Advanced Technologies”, St Petersburg, Russia. 3. CAMECA SAS, Gennevilliers, Cedex, France .

10.00

O3-08

Determination of the state of non-volatile memory cell with the floating gate by using scanning probe microscopy D. Hanzii 1 , E. Kelm 2 , N. Luapunov 2 R. Milovanov 2 , G. Molodcova 2 , M. Yanul 1 , D. Zubov 2 1. NT-MDT, Zelenograd, Russia. 2. Institute of Nanotechnology of Microelectronics, RAS, Moscow, Russia .

10.20

O3-09

Mechanisms of image formation in SEM. Yu.V. Larionov, Yu.A. Novikov A.M. Prokhorov General Physics Institute, RAS, Moscow, Russia .

10.40

O3-10

Virtual scanning electron microscope Yu.V. Larionov , Yu.A. Novikov A.M. Prokhorov General Physics Institute, RAS, Moscow, Russia .

 

Auditorium B

Session 15. Micro- and Nanoelectronic Structures I

Session Chairman: Igor Neizvestnyi, A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia

09.00

O3-11

Formation mechanism and properties of Ge quasicrystalline nanoclusters in SiOx matrix. Yu.N. Kozyrev1M.Yu. Rubezhanska1, V.S. Lysenko2, S.V. Kondratenko3, V.P. Kladko2, Yu.V. Gomeniuk2, Ye.Ye. Melnichuk31. O.O. Chuiko Institute of Surface Chemistry, Kyiv, Ukraine. 2. Institute of Semiconductor Physics, Kyiv, Ukraine. 3. Taras Shevchenko national University of Kyiv, Ukraine.

09.20

O3-12

Photoluminescence of Si layers on grown SiO2 and optical resonant structures A.A. Shklyaev 1, 2 , D.V. Gulyaev1D.E. Utkin1, A.V. Tsarev1A.V. Dvurechenskii1, A.V.Latyshev1, 2 1. A .V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia. 2. Novosibirsk State University, Novosibirsk, Russia .

9.40

O3-13

Influence of metamorphic buffer design on electrophysical and structural properties of MHEMT nanoheterostructures In0.7Al 0.3As/In0.7Ga0.3As/In0.7Al0.3As/GaAs. S.S. Pushkarev1,2, G.B. Galiev1, E.A. Klimov1, D.V. Lavrukhin1, I.S. Vasil’evskii 2, R.M. Imamov3, I.A. Subbotin3, O.M. Zhigalina3, V.G. Zhigalina3, P.A. Buffat4, B. Dwir4Å .I. Suvorova 3,4 1. Institute of Ultrahigh Frequency Semiconductor Electronics, RAS, Moscow, Russia. 2. National Nuclear Research University “MEPHI”, Moscow, Russia. 3. A.V. Shubnikov Institute of Crystallography of RAS, Moscow, Russia. 4. Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland .

10.00

O3-14

GaN layers with low dislocation density and high electron mobility grown by high-temperature ammonia-MBE S.I. Petrov1, A.N. Alexeev1, D.M. Krasovitsky2, V.P. Chaly2, V.V. Mamaev1 1. SemiTEq JSC, Saint-Petersburg, Russia. 2. Svetlana-Rost JSC, Saint-Petersburg, Russia .

10.20

O3-15

Formation, optical, electrical, and thermoelectrical properties of silicon nanocomposites with embedded Mg2Si nanocrystallites K.N. Galkin1, S.V. Vavanova1, N.G. Galkin1, R. Kudrawiec2, E. Zielony2, A. Misiewicz2 1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladovostok, Russia. 2. Institute of Physics, Wroclaw University of Technology, Wroclaw, Poland .

10.40

O3-16

Laser pulse crystallization and optical properties of Si/SiO2 and Si/Si3N4 multilayer nano-heterostructures V . A Volodin 1 S .A. Arzhannikova1 , A.A. Gismatulin 1 G.N. Kamaev1, A.H. Antonenko1, S.G. Cherkova1, S.A. Kochubei1, A.A. Popov2, H. Rinnert3, and M. Vergnat3 1. Institute of Semiconductor Physics, RAS; Novosibirsk State University, Novosibirsk, Russia. 2. Yaroslavl Department of FTI RAS, Yaroslavl, Russia. 3. Institut Jean Lamour UMR CNRS – Nancy Universite – UPV Metz, Faculte des Sciences et Technologies, Vand?uvre-les-Nancy Cedex, France .

11.00-11.20 Coffee break

 

Conference Hall

Session 16. Plasma and Ion Beam Technologies I

Session Chairman: Konstantin Rudenko, Institute of Physics and Technology, RAS, Russia

11.20

O3-17

INVITED: Fundamentals and applications of Plasma ALD in nanoelectronics . Ch. HodsonOxford Instruments Plasma Technology, UK.

11.50

O3-18

INVITED: Applications of Plasma Immersion Ion Implantation for advanced micro/nano electronics: Challenges and case samples using IBS PULSION R Tool F. Torregrosa 1 , J. Duchaine1, S. Spiegel1, G. Borvon1, F. Milesi2, K. Hassouni3, K. Maury 3 1. IBS, ZI Peynier Rousset, Peynier, France. 2. CEA-Leti MINATEC Campus, Grenoble Cedex 9, France. 3. Laboratoire des Sciences des Procedes et des Materiaux, LSPM, CNRS-UPR3407 Universite Paris 13, Villetaneuse, France .

12. 20

O3-19

Comparative investigation of ultra-shallow boron implantation into bulk silicon and SOI structures by PIII technique A. Miakonkikh 1 , K. Rudenko1, V. Rudakov2, A. Orlikovsky1 . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Yaroslavl Branch of Institute of Physics and Technology, RAS, Yaroslavl, Russia .

12.40

O3-20

Etching characteristics of GaAs in CCl2F2/Ar inductively coupled plasma D.B. Murin, V.I. Svettsov, A.M. Efremov, A.E. Leventsov Ivanovo State University of Chemical Technology, Ivanovo, Russia .

13.00

O3-21

The effects of additive gases (Ar, N2, H2, Cl2, O2) on HCl plasma parameters and composition. A. Efremov, A. Yudina, A. Davlyatshina, V. Svettsov Ivanovo State University of Chemistry and Technology, Ivanovo, Russia .

 

Auditorium A

Session 17. Quantum Informatics VI

Session Chairman: Farid Ablayev, Institute for Informatics of Tatarstan Academy of Sciences, Kazan, Russia

11.20

q3-01

INVITED: Entanglement in a system of harmonic oscillators Yu. Ozhigov Moscow State University; Institute of Physics and Technology RAS, Moscow, Russia .

11.50

q3-02

The strong influence of weak observers on the electron dynamics in large coupled quantum dots clusters L. Fedichkin 1,2,3 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. NIX, Moscow, Russia .

12.10

q3-03

Analysis of quantum processes: methods and results A.Yu. Chernyavskiy 1,2 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. 2. Moscow State University, Moscow, Russia .

12.30

q3-04

Entanglement-annihilating quantum dynamical processes S.N. Filippov 1,2 1. Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Russia .

12.50

q3-05

Euclidean qubits versus conventional quantum circuits A.Yu. Vlasov 1,2 1. Federal Radiology Center, IRH, St.-Petersburg, Russia. 2. A. Friedmann Laboratory for Theoretical Physics, St.-Petersburg, Russia .

 

Auditorium B

Session 18. Micro- and Nanoelectronic Structures II

Session Chairman: Oleg Trushin , Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia

11.20

O3-22

The conductive layers on the base of multiwalled carbon nanotubes . L.P. Ichkitidze 1 , B.M. Putrya1, S.V. Selishchev1, E.V. Blagov2, A.A. Pavlov2, V.A. Galperin3 , E.P. Kitsyuk3, Yu.P. Shaman31. National Research University of Electronic Technology “MIET” , MIET, Zelenograd, Moscow, Russia. 2. Institute of Nanotechnology of Microelectronics, RAS, Moscow, Russia. 3. Scientific-Manufacturing Complex “Technological Centre”, MIET, Zelenograd, Moscow, Russia.

11.40

O3-23

Investigation of nucleation and field emission characteristics of carbon nanowalls grown on porous silicon S. Evlashin,Y. Mankelevich, A. Pilevskii, V. Borisov, P. Shevnin, A. Stepanov, N. Suetin, A. Rakhimov Skobeltsyn Institute of Nuclear Physics, Moscow, Russia .

12.00

O3-24

Properties of thin HfO2 gate dielectric formed by plasma ALD process A. Miakonkikh , A. Rogozhin, K. Rudenko, A. Orlikovsky Institute of Physics and Technology, RAS, Moscow, Russia .

12.20

O3-25

Effect of nanodimensional polyethylenimine layer on surface potential barriers of hybrid structures based on silicon single crystal I.V. Malyar, D.A. Gorin, S.V. Stetsyura. Saratov State University, Saratov, Russia .

12.40

O3-26

Possible influence of nanoobjects on properties of nanomaterials. S.P. Timoshenkov, I.M. Britkov, O.M. Britkov, S. Evstafiev, A.S. Timoshenkov, B.M. Simonov, E.P. Prokopev. Federal State Budgetary Institution of Higher Education “National Research University “MIET”, Zelenograd, Russia .

13.20-14.00 Lunch

 

Conference Hall

Session 19. Micro- and Nanoelectromechanical Systems

Session Chairman: Sergey TimoshenkovNational Research University of Electronic Technology, Microelectronics Dept., Zelenograd, Moscow, Russia .

14.00

O3-27

INVITED: The physical and technological problems in design of pressure sensors with nano-scale piezoresistors. I. Neizvestnyi1, G. Kamaev1, V. Gridchin2, A. Cherkaev21 A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia; 2Novosibirsk State Technical University, Novosibirsk, Russia.

14.30

O3-28

Design and fabrication of piezoelectric MEMS. S. Timoshenkov, V. Vodopyanov, N. Korobova. National Research University of Electronic Technology, Department of Microelectronics, Zelenograd, Moscow, Russia .

14.50

O3-29

New electronic system converter linear acceleration with custom output characteristics S. Timoshenkov , A. Timoshenkov, A. Shalimov National Research University of Electronic Technology, Microelectronics Dept., Zelenograd, Moscow, Russia .

15.10

O3-30

Resonance properties of multilayer metallic nanocantilevers . I. Uvarov, V. Naumov, I. AmirovYaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia.

15.30

O3-31

Modeling of two-axis micromechanical gyroscope-accelerometer. I.E. LysenkoTaganrog Institute of Technology – Southern Federal University, Taganrog, Russia .

1 5. 50

O3-32

Matrix propulsion microthruster for nanosatelites V. Bondarenko 1 , K. Dobrego2, L. Dolgyi1, A. Klushko1, E.Chubenko1, S. Futko2 1. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus. 2. A.V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus,Minsk, Belarus .

 

Auditorium A

Session 20. Quantum Informatics VII

Session Chairman: Yuri Ozhigov, Moscow State University, Moscow, Russia

14.00

q3-06

On the validity of neoclassical theory of the Compton effect for revision and reformulation of the standard quantum mechanics interpretation. V.V. AristovInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Russia .

14.20

q3-07

Why quantum computing can be real only in multiple universes V.V. Aristov, A.V. NikulovInstitute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia .

14.40

q3-08

Simulations of adiabatic and nonadiabatic chemical reactions in condensed media. K. ArakelovMoscow State University, Moscow, Russia .

15.00

q3-09

Quantum implication and strategies for multi-agent models A.A Ezhov, A.G. Khromov, S.S. Terentyeva Science Research Center of Russian Federation Troitsk Institute for Innovation and Fusion Research, city district Troitsk, Moscow, Russia .

 

Auditorium B

Session 21. Plasma and Ion Beam Technologies II

Session Chairman: Alexander Efremov , Ivanovo State University of Chemical Technology, Ivanovo, Russia

14.00

O3-33

INVITED: Formation of Nanoscale Structures by Inductively Coupled Plasma Etching . C. WelchOxford Instruments Plasma Technology, UK.

14.3 0

O3-34

Plasma etching of silicon for MEMS and optical applications: Comparison of RIE, Bosch and cryogenic processes . I. Amirov1V. Lukichev1, V. Yunkin21. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Institute of Microelectronics Technology, RAS, Chernogolovka, Russia .

14.5 0

O3-35

Low-temperature synthesis of carbon nanotubes by plasma enhanced chemical vapor deposition. V.A. Galperin, A.A. Pavlov, Yu.P. Shaman, A.A. Shamanaev, S.N. Skorik Scientific-Manufacturing Complex “Technological Centre”, Moscow, Russia .

15.1 0

O3-36

Photovoltaic properties of porous-Si:He/Si structure produced by plasma immersion ion implantation A. Rogozhin A. Miakonkikh, K. Rudenko Institute of Physics and Technology, RAS, Moscow, Russia .

15.3 0

O3-37

On a way to fabrication technology of u ltra thin Si on sapphire. V. Chernysh 1 , A. Shemukhin2, Yu. Balakshin1, N. Egorov3, V. Goncharov3, S. Golubkov3, A. Sidorov3, B. Malukov3, V. Statsenko4, V. Chumak4 1. Faculty of Physics, Moscow State University, Moscow, Russia. 2. Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 3. Research Institute of Material Science and Technology, Zelenograd, Russia. 4. Epiel Joint Stock Company , Zelenograd, Russia .

1 5.50

O3-38

Nonlinear waves and structures induced by ion bombardment of solids S. Krivelevich1, D. Korshunova2, N. Pron2 1. Yaroslavl Branch of the Institute of Physics and Technology , RAS, Yaroslavl, Russia. 2. Yaroslavl State University, Yaroslavl, Russia .

16.10-16.30 Coffee break

16.30-18.30 Entresol. POSTER SESSION II

Bottom hall. EXHIBITION

18.30. Conference Hall. CLOSING CONFERENCE REMARKS

À . À . Orlikovsky, Program Committee Chair,

Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

 

19.30 CONFERENCE DINNER

 

Friday, October 5th, 2012

09.00 Breakfast

10.00 DEPARTURE

Posters | Oral Presentations

Wednesday, October 7th 2009

Entresol

16.30 – 18.30 Poster session I

Nanodevices and Nanostructures

P1-01

Determination of electronic properties of molecular objects on the basis of nanodevices transport characteristics. V.A. Malinin, V.V. Shorokhov, E.S. Soldatov. Faculty of Physics, Moscow State University, 119899 Moscow, Russia

P1-02

Highly doped SOI based single-electron transistor: noise characteristics and charge sensitivity. D.E. Presnov1, V.S. Vlasenko2, S.V. Amitonov2, V.A. Krupenin2. 1. Nuclear Physics Institute, Moscow State University, Moscow, Russia  2. Laboratory of Cryoelectronics, Moscow State University, Moscow, Russia

P1-03

Nanocarbon films with electronic conductivity. N.F. Savchenko, M.B. Guseva, V.V. Khvostov, Yu.A. Korobov, A.F. Alexandrov. Physics Department, M.V. Lomonosov Moscow State University, Russia

P1-04

Secondary-emission properties of the carbon films. V.V. Khvostov, M.B. Guseva, N.F. Savchenko, Yu.A. Korobov, N.D. Novikov. Physics Department, M.V. Lomonosov Moscow State University, Moscow,  Russia.

P1-05

Investigation of auto-emission diodes with CNT emitters under small inter-electrode distance conditions. S. Orlov1, O. Gushchin1, S. Yanovich1, V. Shyshko1, O. Perveeva1, N. Savinsky2. 1. Mikron JSC, Zelenograd, Russia, 2. Institute of Physics and Technology, Yaroslavl Branch, RAS,  Yaroslavl, Russia

P1-06

Design of 3D nano-carbon emitter based autoemission devices. N. Savinski1, M. Gitlin1, A. Shornikov1. 1. Yaroslavl branch of Institute of Physics & Technology,Russian Academy of Sciences, Yaroslavl, Russia

P1-07

ZnO nanorods for device application. O.V. Kononenko 1, A.N. Red’kin 1, A.N. Baranov2, A.N. Panin1, 4, M.V. Shestakov3, V.T. Volkov1, A.I. Il’in1, E.E. Vdovin1 1. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia. 2. Moscow State University, Chemistry Department, Moscow, Russia 3. Moscow State University, Department of Materials Science, Moscow, Russia 4. Quantum-functional Semiconductor Research Center, Department of Physics, Dongguk University, Seoul, Korea.

P1-08

Observation of spin injection in ballistic nanostructures Mo(001)/Py. G.M. Mikhailov, V.Yu. Vinnichenko, A.V. Chernykh, I.V. Malikov, S.V. Piatkin. Institute of microelectronic technology and high purity materials RAS, Chernogolovka, Russia.

Nanostructure Technologies

P1-09

Formation of Voids in Silicon-Based Structures Annealed in Non-Isothermal Reactor. Yu.  I. Denisenko. Institute of Physics and Technology, Yaroslavl Branch, RAS,  Yaroslavl, Russia

P1-10

Si wires deposition by magnetron sputtering method. S. Evlashin, N. Suetin, V. Krivchenko. D.V. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University

P1-11

Nanocrystalline silicon on sapphire. D. Pavlov, P. Shilyaev, E. Korotkov, N. Krivulin. University of Nizhniy Novgorod, Nizhniy Novgorod, Russia.

P1-12

Formation of the atomically smooth surface of gold film and the binding of gold nanoparticles on it by the self-assembly method. A.N. Kuturov1, E.S. Soldatov2, L.A. Polyakova3, S.P. Gubin3. 1. P.N. Lebedev Physical Institute of the Russian Academy of Science, Moscow, Russia 2. M.V. Lomonosov Moscow State University, Moscow, Russia, 3. Institute of General Inorganic Chemistry of the Russian Academy of Science, Moscow, Russia

P1-13

LGD-technology of FM/SC hybrid nanostructrures. A.S. Sigov1, A.V. Abramov2, L.A.Bityutskaya3, E.V. Bogatikov3, M.V.Grechkina3, Yu.I. Dikarev3, A.P.Lazarev2, E.A.Pankratova2, V.M.Rubinshtein3, A.V.Tuchin3. 1. MIREA, Moscow, Russia, 2. «Rosbiokvant» Ltd, Voronezh, Russia  3. Voronezh State University, Voronezh, Russia

P1-14

Preparation of electrodes for molecular transistor by focused ion beam. I.V. Sapkov1, V.V. Kolesov2, E.S. Soldatov1 . 1. Department of Physics, Moscow State University, Russia, 2. Kotel’nikov Institute of Radioengineering & Electronics of  Russian Academy of Sciences, Moscow, Russia

P1-15

Formation of molecular transistor electrodes by electromigration. A.S. Stepanov1, E.S. Soldatov2, O.V. Snigirev1,2. 1. IMP, RRC “Kurchatov Institute”, Russia, 2. M.V. Lomonosov Moscow State University, Russia

P1-16

PECVD carbon nanostructure formation using DC glow discharge. D.G. Gromov, S.A. Gavrilov, I.S. Chulkov. Moscow Institute of Electronic Technology (Technical University), Zelenograd, Russia

Devices and ICs

P1-17

Physical limitations of reliability in microwave microelectronic devices operating in periodical pulse mode. A.G. Vasiliev, V.F. Sinkevich. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia

P1-18

Principal problems of quality improvement for high-speed planar transmission lines issued from studies of high-Q microstrip resonators. A.P. Chernyaev2, V.A. Dravin1, A.Yu. Golovanov1,2, A.L. Karuzskii1, A.E. Krapivka1, A.N. Lykov1, V. N. Murzin1, A. V. Perestoronin1, A. M. Tskhovrebov1, N. A. Volchkov1. 1. P.N. Lebedev Physical Institute of Russian Academy of Sciences, Moscow, Russia 2. Moscow Institute of Physics and Technology (State University), Dolgoprudny, Russia.

P1-19

Effect of Conductivity Triggering: Studying and Optimization of MOS-like Structures. A.E. Berdnikov, A.A. Popov, A.A. Mironenko, V.D. Chernomordick, A.V. Perminov. Yaroslavl Branch of Institute of Physics & Technology of Russian Academy of Sciences, Russia

P1-20

Design and application features of nonvolatile memory based on ferroelectric thin films. A. Marycheva1, N. Zaitsev2. 1. Moscow Institute of Electronic Engineering (TU), Zelenograd, Russia,  2. Micron Corp., Zelenograd, Russia

P1-21

Research of SONOS non -volatile memory elements. O. Orlov 1, N. Shelepin 1. Mikron JSC, Moscow, Russia

P1-22

Research and optimization of anodic joint process of SOI microelectromechanical strain transducer with glass reference element. L. Sokolov1, N. Parfenov1, S. Timoshenkov2, V. Kalugin2. 1. Moscow Aviation Institute, Moscow, Russia 2. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia.

P1-23

Experimental research of the Magnetotransistor in a double well. A. Kozlov1, Yu. Parmenov1, R. Tikhonov2. 1. Moscow State Institute of Electronic Engineering – Technical University, 2. SMC “Technical University”

P1-24

The amplifier-concentrator of electrons as the base element of the emission electronics. E. Il`ichev, A. Kuleshov, E. Poltoratskii, G. Rychkov. State Research Institute of Physical Problems,Zelenograd, Moscow, Russia

P1-25

Piezoelectric current generator through filamentary nanocrystals of zinc oxide. M. Nazarkin, S. Gavrilov. Moscow Institute of Electronic Technologies (Technical University, Zelenograd, Russia

P1-26

New type of high efficiency power supply of digital units. Y. Chaplygin, V. Losev. Moscow State Institute of Electronic Engineering, Moscow, Russia

Superconducting Structures and Devices

P1-27

The theoretical analysis of electronic thermal properties of the interfaces between multiband superconductors and a normal metal. I.A. Devyatov1,  M.Yu. Romashka1, A.V. Semenov2, P.A. Krutitskii3, M.Yu. Kupriyanov1. 1. Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow, Russia, 2. State Pedagogical University, Moscow, Russia, 3. Keldysh Institute for Applied Mathematics, Moscow, Russia

P1-28

Microscopic theory of thermal phase slips in diffuse superconducting wires. A.V. Semenov1, I.A. Devyatov2, P.A. Krutitskii3, M.Yu. Kupriyanov2. 1. Moscow State Pedagogical University, Moscow, Russia, 2. Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russia, 3. Keldysh Institute for Applied Mathematics, Moscow, Russia

P1-29

Characteristics of Nb/?-Si/Nb Josephson junction arrays at frequencies of 68 – 75 GHz. A.L. Gudkov1, A.A. Gogin1, A.I. Kozlov1, A.N. Samys1, I.Ya. Krasnopolin2. 1. CJSC “Compelst”, FSUE “SRIPP n. F.V. Lykin”, Moscow,  Zelenograd, Russia 2. FSUE  “VNIIMS”, Moscow,  Russia

P1-30

Transport properties of josephson junctions with ferromagnetic layers. T.Yu. Karminskaya1, A.A. Golubov2, M.Yu. Kupriyanov1, A.S. Sidorenko3. 1. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 2. Faculty of Science and Technology and MESA+ Institute of Nanotechnology, University of Twente, The Netherlands. 3. Institute of Electronic Engineering and Industrial Technologies Chisinau, Moldova.

P1-31

Bi-SQUID with linear transfer function. V. Kornev1 , I. Soloviev1 , N. Klenov1, O. Mukhanov2. 1. Moscow State University, Moscow, Russia, 2. HYPRES, Elmsford, USA

Photonics and Optoelectronics

P1-32

Modeling of optical integrated circuit of a multiplexer/splitter on a basis of a photonic crystal structure. M. Belkin, K. Kostenko. Moscow State Technical University of Radio-Engineering, Electronics and Automation

P1-33

Computer-aided design of the high-efficient laser module for microwave-band fiber optic systems. M. Belkin, A. Loparev. Moscow State Technical University of Radio-Engineering, Electronics and Automation. Moscow, Russia

P1-34

Numerical methods for calculation of optical properties of layered structures. S.A. Dyakov1,4, V.A. Tolmachev1,2, E.V. Astrova2, S.G. Tikhodeev3, V.Y.Timoshenko4, T.S. Perova1 . 1. Trinity College Dublin, Dublin 2, Ireland. 2. Ioffe Physical Technical Institute, RAS, St. Petersburg, Russia 3. General Physics Institute, RAS, Moscow, Russia. 4. Faculty of Physics, Moscow University, Moscow, Russia.

P1-35

Vertical double range photocell with polysilicon photodiode, volume resonator and a photoelement with isotype potential p+ barrier in the substrate for UV application. I.V. Vanyushin1, V.A. Gergel2, N.M. Gorshkova2, A.G. Klimkovich1. 1. LCC “SensorIС”, Moscow, Russia. 2. Kotel`nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia

P1-36

Formation of One-Dimensional Photonic Crystals by Means of Photo-Electrochemical Etching of Silicon. Yu.A. Zharova1, G.V. Fedulova1, E.V. Astrova1, V.A. Ermakov2 and T.S. Perova2. 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St.Petersburg, Russia, 2. Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Ireland

P1-37

Titanium dioxide with carbon nanotubes nanocomposite for new generation solar cells. A. Dronov , S. Gavrilov. Moscow Institute of Electronic Technologies (Technical University), Russia

P1-38

Application of linear-chain carbon nano-films in optoelectronic devices. M.B. Guseva1, P.B. Konstantinov2, Y.A. Kontsevoy2, N.N. Novikov1, A.S. Skrileov2, V.V. Khvostov1, V.V. Chernokozhin2 . 1. Physical faculty of Lomonosov Moscow State University Moscow, Russia, 2.  FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia

P1-39

Critical temperature of SF and SFS multilayres with arbitrary electron mean free path in F and S films. M.Yu. Kupriyanov1, A.I. Buzdin1, A.A. Golubov2 . 1. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 2. Centre de Physique Moleculaire Optique et Hertzienne, Universite Bordeaux, CNRS, France. 3. Faculty of Science and Technology and MESA+ Institute of Nanotechnology, University of Twente, The Netherlands.

P1-40

Experimental study of differential SQIF-structures. V. Kornev1 , I. Soloviev1 , N. Klenov1, O. Mukhanov2. 1. Moscow State University, Russia, 2. HYPRES, Elmsford, USA

P1-41

Quantum interferometers on multichain of josephson junctions. A. Karuzskiy1, G. Kuleshova2, A. Tshovrebov1, L. Zherikhina1. 1. Lebedev Physical Institute, Russian Academy of Science, Moscow, Russia; 2. Moscow Engineering Physics Institute (State University) , Moscow, Russia

Magnetic Micro- and Nanostructures

P1-42

Propagation of magnetostatic surface waves in ferromagnetic films with variable thickness. Yu.A. Ignatov, V.I. Scheglov, A.A. Klimov, S.A. Nikitov. Kotel’nikov Institute of Radio Engineering and Electronics (IRE RAS), Moscow

P1-43

Modification of magnetic domain structures in Co film using the atomic force microscopy nano-oxidation. A. Bukharaev1,2, D. Biziaev1, P. Borodin1, I. Merkutov2 . 1. Zavoisky Physical Technical Institute of Russian Academy of Sciences,  Kazan, Russia, 2. Kazan State University, Kazan, Russia

P1-44

Investigations of magnetic states in multilayer submicron ferromagnetic particles. A.A. Fraerman, B.A. Gribkov, S.A. Gusev, A.Yu. Klimov, V.L. Mironov, V.V. Rogov, S.N.Vdovichev. Institute for physics of microstructures RAS, Nizhny Novgorod, Russia.

P1-45

Fe/MgO/Fe heterostructures on r-sapphire for single-crystal magnetic tunnel junctions. A. Chernykh, V. Vinnichenko, L. Fomin, G. Mikhailov. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia

P1-46

Epitaxial Fe3O4 films for spin valve applications. I.V. Malikov, G.M. Mikhailov. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia.

P1-47

Investigation of domain wall pinning and nanostructures remagnetization of epitaxial Fe structures with use of magnetic force contrast and magnetoresistance measurements. G.M. Mikhailov, V.Yu. Vinnichenko, L.A. Fomin, K.M. Kalach, I.V. Maliko. Institute of microelectronic technology RAS, Chernogolovka, Russia

P1-48

Dependence of two-layer structures Cu/Co magnetoresistance on thickness of copper. V. Naumov. Yaroslavl branch of Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl, Russia.

P1-49

Study of size effect on switching characteristics of spinvalve GMR sensor. O.S. Trushin1 , E.Yu. Buchin1 , V.F. Bochkarev1, N. Barabanova2. 1. Yaroslavl Branch of the Institute of Physics and Technology of  Russian Academy of Sciences, Yaroslavl, Russia, 2. Department of Physics, Yaroslavl State University, Yaroslavl, Russia

P1-50

GMR sensor design optimization using micromagnetic simulations. O.S. Trushin1, N. Barabanova2, V.P. Alexeev2 . 1. Yaroslavl Branch of the Institute of Physics and Technology of  Russian Academy of Sciences, Yaroslavl, Russia, 2. Department of Physics, Yaroslavl State University, Yaroslavl, Russia

P1-51

Optical and thermal effects in polymers with superparamagnetic impurities. R.M. Aynbinder. Institute of Chemical Technology, Prague, Czekh Republic.

P1-52

Ferromagnetic resonance study of thin Si65Mn35 layer. S. Kapelnitsky1,21. Russian Research Centre “Kurchatov Institute”, Moscow, Russia. 2. Institute of Physics and Technology, Russian Academy of Sciences, Moscow , Russia

Delayed Posters at Session I

D1-01

Magnetic and thermal properties of nanocomposite GdNiO3 . А.I. Rykova1, V.M. Dmitriev1, E.N. Khatsko1, A.V. Terekhov1 А.S. Cherny1,  D.S. Kondrashev1, T. Mydlarz2, A. Zaleski2  , A.D. Shevshenko3, V.M. Uvarov3 . 1. B.I.Verkin Institute for Low Temperature Phys. & Engineering of NASU, Kharkov, Ukraine. 2. International laboratory of high magnetic fields and low temperatures, Wroclaw, Poland, G. V. Kurdyumov Institute for Metal Physics of the NAS of Ukraine, Kyyiv, Ukraine

D1-02

Magnetic properties of system La1-xSmxMnO3  . А.I. Rykova1, E.N. Khatsko1, А.S. Cherny1, T. Mydlarz2, J. Warchulska2 1. B.I.Verkin Institute for Low Temperature Phys. & Engineering of NASU, Kharkov, Ukraine 2. International laboratory of high magnetic fields and low temperatures, Wroclaw, Poland

 

Thursday, October 8th 2009

Entresol

16.45 – 18.30 Poster session II

Simulation and Modeling

P2-01

Calculation of the characteristics of electron transport through molecular clusters. Y.S. Gerasimov1 , V.V. Shorokhov2 , E.S. Soldatov2 , O.V. Snigirev1,2. 1. IMP, RRC “ Kurchatov Institute”, Moscow, Russia, 2. Faculty of Physics, Moscow State University, Moscow, Russia

P2-02

Investigation of segregation effect in InGaAs/GaAs quantum wells by means a computer simulation. A.N. Baryshev, S.V. Khazanova. Nizhni Novgorod University im.N.I.Lobachevskogo, NIzhni Novgorod, Russia

P2-03

Simulation of impurity diffusion at the formation of ultrashallow active areas in silicon-based FET. F. Komarov1, O. Velichko2, A. Mironov1, G. Zayats3, A. Komarov1, V. Tsurko3. 1. Institute of Applied Physics Problems, Minsk, Belarus, 2. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus 3. Institute of Mathematics, Academy of Sciences of Belarus, Minsk, Belarus.

P2-04

Modeling of the interfacial separation work in relation to impurity concentrations in adjoining materials. I. Alekseev, T. Makhviladze, A. Minushev, M. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia.

P2-05

Energetics and atomic mechanisms of strain relaxation in heteroepitaxial systems. O. Trushin1 , J. Jalkanen2 , E. Granato3 , S-C. Ying4, T. Ala-Nissila2. 1. Institute of Physics and Technology of  Russian Academy of Sciences, Yaroslavl Branch, Yaroslavl, Russia, 2. Department of Engineering Physics, Helsinki University of Technology, Espoo, Finland, 3. Laboratґorio Associado de Sensores e Materiais, Instituto National de Pesquisas Espaciais, Sao Jose dos Campos, SP, Brazil, 4. Department of Physics, Brown University, Providence, RI 02912, USA

P2-06

Off-lattice self-learning kinetic Monte-Carlo: application to 2D cluster diffusion on metal surfaces. O. Trushin1 , A. Makin2 , T.S. Rahman3. 1. Institute of Physics and Technology of  Russian Academy of Sciences, Yaroslavl Branch, Yaroslavl, Russia, 2. Department of Physics, Yaroslavl State University, Yaroslavl, Russia 3. Department of Physics, University of Central Florida, Orlando, FL, USA

P2-07

Nanoobject sizes of defects in porous systems and defective materials according ADAP method. Part I. S.P. Timoshenkov1, E.P. Svetlov-Prokop’ev1,2, V.I. Grafutin 1 1. Moscow Institute of Electronic Technology (Technical University), TU- MIET, Zelenograd, Russia,2. «State Science Centre of the Russian Federation- A.I.Alikhanov Institute for theoretical and experimental physics»,  Moscow, Russia

P2-08

Nanoobject sizes of defects in porous systems and defective materials according ADAP method. Part II. S.P. Timoshenkov1, E.P. Svetlov-Prokop’ev1,2, V.I. Grafutin 1 1. Moscow Institute of Electronic Technology (Technical University), TU- MIET, Zelenograd, Russia,2. «State Science Centre of the Russian Federation- A.I.Alikhanov Institute for theoretical and experimental physics»,  Moscow, Russia

P2-09

Calculation of electrophysical parameters of thin undoped GaAs-in-Al2O3 quantum nanowires and single-wall armchair carbon nanotubes. D.V. Pozdnyakov1, A.V. Borzdov1, V.M. Borzdov1, V.A. Labunov2 . 1. Belarusian State University, Minsk, Belarus, 2. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus

P2-10

Penetration of quantum-mechanical current density under semi-infinite rectangular potential barrier as the consequence of the interference of the electron waves in semiconductor 2D nanostructures. V.A. Petrov, A.V. Nikitin. Institute of Radio Engineering and Electronics, Russian Academy of Sciences,Moscow, Russia

P2-11

Laser generation in broken-gap heterostructures. I. Semenikhin1, K.A. Chao2, A. Zakharova1. 1. Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia,  2. Department of Physics, Lund University, Lund, Sweden, and Department of Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden

P2-12

Monte Carlo simulation of submicron three-gate MOSFETs. O. Zhevnyak, V. Borzdov , A. Borzdov, D. Speranski. Belarussian State University, Minsk, Belarus

P2-13

SPICE Modeling and TCAD Simulation of Si Vertical Double-Diffused MOSFET. A.V. Sedov1, V.O. Turin1, A.M. Tsyrlov2, G.I. Zebrev3. 1. Orel State Technical University, Orel, Russia, 2. JSC “Proton”, Orel, Russia, 3. National Research Nuclear University “MEPHI”, Moscow, Russia

P2-14

Modeling of HBT with Si1-X-YGeXCY base. K. Petrosjanc, R. Torgovnikov. Moscow State Institute of Electronics and Mathematics, Moscow, Russia

P2-15

Reversible Gate Oxide Defect Recharging in Nanoscale Field Effect Transistors: Charge Annealing, Tunnel Gate Leakage, Random Telegraph Signal and 1/f Noise. G.I. Zebrev, N. Samokhin, D. Batmanova. Micro- and Nanoelectronics Department, National Research Nuclear University “MEPHI”, Moscow, Russia

P2-16

Radiation-Hardening-by-Design with Circuit-Level Modeling of Total Ionizing Dose Effects in Modern CMOS Technologies. M. Gorbunov1 , G. Zebrev2 , P. Osipenko1. 1. Scientific-Research Institute of System Studies, Russian Academy of Sciences, Moscow, Russia  2. Moscow Engineering Physics Institute, Moscow, Russia

P2-17

Specification of model for the multi-cathode quantum vacuum nano-triode on the base of new experimental data. V.A. Zhukov. St. Petersburg Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia

P2-18

The specifics of modeling high-speed integrated amplifiers with high amount of feedback. E.M. Savchenko, A.S. Budyakov. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia

Thin Films Technologies

P2-19

Formation of Ge/Cu ohmic contacts to n-GaAs with atomic hydrogen pre-annealing step. E. Erofeev1, V. Kagadei2. 1. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia 2. Research and production company “Micran”, Tomsk, Russia.

P2-20

Hf-based barrier layers for Cu-metallization. Denisenko Yu.I.1, Gusev V.N.1, Khorin A.I.1,2, Orlikovsky A.A.1, Rogozhin A.E.1, Rudakov V.I.1, Vasiliev A.G.1,3 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia 2. Moscow State Institute of Radio-engineering, Electronics and Automation, Moscow, Russia, 3. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia

P2-21

Properties of HfO2 films on Si-substrate obtained by electron beam vapor deposition. A.V. Ershov, S.N. Zubkov, V.V. Karzanov, S.V. Khazanova, О.N. Nikolaeva, D.A. Nikolichev. Nizhni Novgorod University im.N.I.Lobachevskogo, NIzhni Novgorod, Russia.

P2-22

Some peculiarities in the formation functional films by sol-gel and electrophoretic technologies. N. Korobova1, S. Timoshenkov2 , A. Shabanova3. 1. Kazakh National University, Almaty, Kazakhstan.; 2. Moscow Institute of Electronic Technology, Moscow, Russia, 3. National Engineering Academy, Almaty, Kazakhstan.

P2-23

The peculiarities of creating composite glasses for multilayer structures, MEMS structures included. S. Timoshenkov 1, O. Orlov 2 . 1. Moscow Institute of  Electronic Technology, Moscow, Russia, 2.  Mikron JSC, Moscow, Russia

Lithography Techniques

P2-24

Electron Beam Lithography using PMMA as negative resist. E.N. Zhikharev, S.N. Averkin, V.A. Kalnov. Institute of Physics and Technology of Russian Academy of Science, Moscow, Russia

P2-25

Application of virtual scanning electron microscope to determine the parameters of atom nanolithograph microlenses. A. Zablozkiy1, E. Shehin1, A. Kuzin1, A. Baturin1, P. Melentiev2, D. Lapshin2, V. Balykin2 . 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 2. Institute of Spectroscopy Russian Academy of Sciences, Troitsk , Russia

Ion and Neutral Beam Processing

P2-26

Features of relief formation at silicon surfaces by etching with focused ion beam. N. Gerasimenko1, A. Chamov1,2, E. Novoselova2, V. Khanin2. 1. Moscow Institute for Electronic Engeneering, Moscow, Russia, 2. JSC Mikron, Moscow, Russia.

P2-27

Modification of electrophysical behavior of surface adjacent to FIB milling area. A.A. Chouprik, A.A. Kuzin, A.V. Zablotskiy. Moscow Institute of Physics and Technology, Dolgoprudny, Russia.

P2-28

Formation of buried borosilicate layers by means of ion implantation. A. Churilov, S. Krivelevich, R. Seljukov. Yaroslavl branch of Institute of Physics & Technology, Russian Academy of Sciences, Yaroslavl, Russia

P2-29

Fast atom beam formation of inert and chemically active substances in an extensive source of ions for application in the technological processes. Y. Maishev, S. Shevchuk, T. Matveev. Institute of Physics and Technology RAS, Moscow, Russia.

Plasma Processing

P2-30

Microwave plasma assisted single crystal diamond films growth and its application in microelectronics. A.L. Vikharev1, A.M. Gorbachev1, A.B. Muchnikov1, D.B. Radishev1, A.A. Altukhov2, A.V. Mitenkin2, M.P. Dukhnovsky3, V.E. Zemlyakov3. 1. Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, Russia, 2. ITC «UralAlmazInvest», Moscow, Russia, 3. FSUE «Istok», Fryazino, Russia

P2-31

Plasma damage and restoration of CVD low-k materials. E. Smirnov1,2 , A. Ferchichi2 , L. Zhao2, M.R. Baklanov2. 1. Moscow Institute of Electronic Technology (Technical University), Zelenograd, Russia 2. IMEC, Leuven, Belgium.

P2-32

Optimization of parameters of deep plasma chemical process of silicon etchings for elements MEMS. A.I. Vinogradov, N.M. Zaryankin, Yu.A. Mikhajlov, E.P. Prokopiev, S.P. Timoshenkov. Moscow Institute of Electronic Technology (Technical University), TU- MIET, Zelenograd, Moscow, Russia

P2-33

Formation of periodical nanostructures on semiconductors using solid alumina template. A. Belov, S. Gavrilov, V. Shevyakov. Moscow Institute of Electronic Techologies (Techincal University), Zelenograd, Russia

P2-34

The effect of plasma treatment on the residual stresses of metallic cantilever structures. I.I. Amirov, V.V. Naumov. Yaroslavl branch of the Institute of Physics & Technology, Russian Academy of Sciences,, Yaroslavl, Russia

P2-35

Kinetics of the GaAs etch process in the Cl2 dc glow discharge plasma. A. Dunaev, S. Pivovarenok, A. Efremov, V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia

P2-36

Plasma parameters and composition in HCl/X (X=Cl2, H2, Ar) dc glow discharges. A. Efremov, V. Svettsov, S. Lemehov. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia

P2-37

Emission Tomography Algorithm Optimization: Applications for Microelectronic Plasma Equipment. A.V. Fadeev, K.V. Rudenko, V.F. Lukichev, A.A. Orlikovsky. Lab. of Microstructuring and Submicron Devices, Institute of Physics & Technology, Russian Academy of Sciences, Moscow, Russia

Micro- and Nanostructure Characterization

P2-38

Characterization of GaSb(001) surface under pre-growth processing. M.S. Dunaevskii, E.V. Kunitsina, T.V. L’vova, A.N. Semenov, B.Y. Meltser, J.V. Terentyev. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Saint-Petersburg,, Russia.

P2-39

Measurements samples temperature and dynamics of recrystallization of implanted silicon at rapid thermal processing. Ya. Fattakhov, M. Galyautdinov, B. Farrakhov, M. Zakharov. Kazan Physical Technical Institute of the Russian Academy of Sciences, Kazan, Russia.

P2-40

Features of electron direct tunneling through an ultrathin oxide under the non-stationary depletion of  a n-Si surface. G.V. Chucheva, E.I. Goldman, Yu.V. Gulyaev, A.G. Zhdan. The Institute of Radio Engineering and Electronics Russian Academy of Sciences, Fryazino, Russia

P2-41

Investigations of nanostructured porous PbTe films with X-ray diffractometry and reflectometry. S.P. Zimin1, V.M. Vasin1, E.S. Gorlachev2, A.P. Petrakov3, S.V. Shilov3. 1. Yaroslavl State University, Russia, 2. Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Russia, 3. Syktyvkar State University, Russia

P2-42

Relationship between modification of electrophysical properties and structural characteristics in semiconductor nanosized heterostructuresInxAl1-xAs/InyGa1-yAs/InxAl1-xAs/InP. R.M. Imamov1, I.A. Subbotin1, G.B. Galiev2, I.S. Vasil’evsky2, E.A. Klimov2 . 1. Shubnikov Institute of Crystallography RAS, Moscow, Russia. 2. Institute of UHF Semiconductor Electronic, Moscow, Russia

P2-43

Characterization of Polymer Semiconductors with TOF-Sims and FTIR. V. Bachurin1, A. Churilov1, O. Kolesnikov1, A. Rudy2, S. Simakin1. 1. Yaroslavl branch of Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl, Russia, 2. Yaroslavl State University, Yaroslavl, Russia.

P2-44

General mechanism of the electric inactivity of the impurity atoms in chalcogenide vitreous semiconductors. G.A. Bordovsky, R.A. Castro, P.P. Seregin, Y.M. Stepanov. Herzen State Pedagogical University of Russia, Saint-Petersburg, Russia

P2-45

Broadband dielectric spectroscopy of As2Se3 modified layers. N.I. Anisimova, V.A. Bordovsky, R.A. Castro, G.I. Grabko, D.S. Kirbiatev, Y.M. Stepanov. Herzen State Pedagogical University of Russia, Saint-Petersburg, Russia

Delayed Posters at Session II

D2-01

Plasma molding in deep silicon reactive ion etching. O. Morozov. Yaroslavl branch of the Institute of Physics & Technology, RAS, Russia.

D2-02

Integration of the DRIE and deep silicon oxidation technologies for suspended MEMS fabrication using standard silicon wafer. A. Postnikov 1, O. Morozov1, I. Amirov1 ,  V. Kalnov21. Yaroslavl branch of the Institute of Physics & Technology, RAS, Yaroslavl, Russia. 2. Institute of Physics & Technology, RAS, Moscow, Russia.

D2-03
SIMS depth profiling of shallow B, P, As in silicon by using TOF.SIMS5 and CAMECA-IMS4F. S. G. Simakin, E. V. Potapov, O. N. Kolesnikov. Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl, Russia.
D2-04
Low-k silicate films prepared by sol-gel process with thermal decomposition of organic species. V.A. Vasiljev1, D.S. Seregin1, K.A. Vorotilov1, A.S. Sigov1, A.S. Valeev2 . 1. Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Russia. 2. JSC Mikron, Zelenograd, Russia.
D2-05
Effect of precursor synthesis on ferroelectric properties of PZT FeRAM elements. D.S. Seregin, Yu.V. Podgorny, N.M. Kotova, K.A. Vorotilov, A.S. Sigov. Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Russia.
D2-06
Model of the p-n junction modulation effect by the magnetic field. Tikhonov R. D. SMC “Technological Centre” MIEE, Moscow, Russia.

 

Oral Presentations | Posters

Monday, October 5th, 2009

9.00 – …Registration & Accommodation
13.00 – 14.00 Lunch

Conference hall

Special Session. Presentations of Hi-Tech Companies

14.30

S-00/1

Milestones of analytical FE-SEM technology – Zeiss Merlin System. Uwe Anton Schubert, Carl Zeiss NTS GmbH, Germany.

15.00

S-00/2

Electron beam lithography tools for nanoelectronic devices. Leonid LitvinRaith GmbH, Germany

15.30

S-00/3

Applications of Electron Beam Lithography. Martin Kirchner, Raith GmbH, Germany

16.00

S-01

JEOL Industrial Electron Beam Lithography SystemsMr. Kamide, General Manager of JEOL Semiconductors Equipment Department

16.30

S-02

Nanoimprint Lithography: Principles, Possibilities, and High Volume Manufacturing. Marc BeckEurotek, Inc., Germany

17.00

S-03

TechnoInfo products overview. A. KuznetsovTechnoinfo Ltd., London, UK

17.30

S-04

Technological complexes for MEMS and NEMS research and development. Victor Bykov. NT-MDT Co.,  Zelenograd, Russia

18.00 – Welcome Party
19.00 – Dinner

Tuesday, October 6th, 2009

8.15 – Breakfast

Conference hall

8.50 – WELCOME REMARKS

E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow
K.A. Valiev, Program Chair, IPT RAS, Moscow

Plenary Session I 

Session Chairman: Alexander Orlikovsky, Institute of Physics &Technology RAS,  Russia

9.00

L1-01

KEYNOTE: Nanoelectronic devices and materials for the end of the roadmap. G. Ghibaudo and F. Balestra. IMEP-LAHC, Minatec (CNRS-Grenoble INP, UJF, US), Grenoble, France

9.40

L1-02

KEYNOTEChallenges of Advanced Interconnects: from Cu/low-k to Wireless. T. Kikkawa. Research Institute for Nanodevice and Bio Systems, Hiroshima University, Japan.

10.20

L1-03

INVITEDElectromigration theory and its applications to integrated circuit metallization. T. Makhviladze, M. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

11.00

L1-04

INVITED: IMEC: from aggressive CMOS scaling to Nanomaterials. Mikhail Baklanov and Patric Verbist. Interuniversitair Microelectronica Centrum (IMEC), Leuven, Belgium.

11.40-12.00 Coffee break. Winter garden

Conference Hall

Session 1. Advanced Lithography

Session Chairman: Vladimir Lukichev, Institute of Physics &Technology RAS, Russia

12.00

L1-05

INVITEDImmersion Lithography and Double Patterning in Advanced Microelectronics. T. Vandeweyer, J. Bekaert, M. Ercken, R. Gronheid, A. Miller, V. Truffert, J. Versluijs, V. Wiaux, P. Wong, G. Vandenberghe, M. Maenhoudt. IMEC vzw, Leuven, Belgium

12.30

O1-01

Projection photolithography modeling using the finite-difference time-domain approach. T. Makhviladze, M. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia.

12.50

O1-02

Influence of thermal annealing on the structural and optical properties of thin multilayer EUV filters containing Zr, Mo and silicides of these metals. N.I. Chkhalo1, S.A. Gusev1, M.N. Drozdov1, E. B. Kluenkov1, A.Ya. Lopatin1, V.I. Luchin1, A.E. Pestov1, N.N. Salashchenko1L.A. Shmaenok2, N.N. Tsybin1. 1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia 2. PhysTeX, Vaals, Netherlands Institute of Semiconductor.

13.10

O1-03

Manufacturing of diffraction quality optical elements for high resolution optical systems. N.I. Chkhalo, A.E. Pestov, N.N. Salashchenko, M.N. Toropov. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

Auditorium A

Session 2. Simulation and Modeling I

Session Chairman: Vladimir Vyurkov, Institute of Physics &Technology RAS,  Russia

12.00

O1-04

Nanoelectronic device simulation software system NANODEV: New opportunities. I.I. Abramov, A.L. Baranoff, I.A. Goncharenko, N.V. Kolomejtseva, Y.L. Bely. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.

12.20

O1-05

The charge sharing inside the layers of nano- CMOS integrated structures under controllable substrate biasing. T. Krupkina, D. Rodionov, A. Shvets, I. Titova. Moscow Institute of Electronic Engineering,  Moscow, Russia

12.40

O1-06

Analysis of lateral thermal SOA for smart power IC’s. Yu. Chaplygin, А. Krasukov, E. Artamonova.  Moscow Institute of Electronic Technology (Technical University

13.00

O1-07

Advanced atomic-scale simulation of silicon nitride CVD from dichlorosilane and ammonia. T. Makhviladze, A. MinushevInstitute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

Auditorium B

Session 3. Photonics and Optoelectronics I

Session Chairman: Sergey Nikitov, Institute of Radioengineering and Electronics RAS, Russia

12.00

O1-08

One-dimensional Photonic Crystals on Silicon as Optical Elements for Integrated Microphotonics. V. Tolmachev1, E. Astrova1, T. Perova2. 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia, 2. Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland

12.20

O1-09

Reduction of noise in atomic system driven by squeezed coherent field. A. Gelman, V. Mironov. Institute of Applied Physics of Russian Academy of Sciences, Nizhny Novgorod , Russia

12.40

O1-10

Enhancement of Optical Properties by Surface Nanostructuring. V.V. Nanumov1 , V.A. Paporkov2 , N.A. Rud2 , E.I. Vaganova1 , A.V. Prokaznikov1. 1. Yaroslavl Branch of Institute of Physics and Technology RAS, Yaroslavl, Russia 2. Yaroslavl State University named after Demidov P.G., Yaroslavl, Russia

13.00

O1-11

Excitation dependence of infrared emission at 1.5-1.6 µm from defect-rich Si layers. A.A. Shklyaev1,2, A.B. Latyshev1,2, M. Ichikawa3 1. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia 3. Quantum-Phase Electronics Center, Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Tokyo, Japan

13.30-14.30 Lunch

Conference Hall

Session 4. Nanodevices and Nanostructures I

Session Chairman: Vitaly Aristov. Institute of Microelectronics Technology, RAS,  Russia

14.30

O1-12

Electronic transport in heterogeneous nanometer FET channels. V. P. Popov. Institute of Semiconductor Physics, Novosibirsk, Russia

14.50

O1-13

Ballistic and Pseudo-Relativistic Carrier Transport in Graphene. G. I. Zebrev. Micro- and Nanoelectronics Department, National Research Nuclear University “MEPHI”, Moscow, Russia

15.10

O1-14

Comparative studies of single- and double-nanocrystal layer NVM structures: charge accumulation and retention. V. Turchanikov1, V. Ievtukh1, A. Nazarov1, V. Lysenko1, M. Theodoropoulou2, A.G. Nassiopoulou2 . 1. Lashkaryov Institute of Semiconductor Physics NASU, Kyiv, Ukraine, 2. IMEL/NCSR Demokritos, Athens-Greece

15.30

O1-15

Silicon nanoballs recharging in plasma-chemical oxide of nanometric thickness. M.D. Efremov1,2, S.A. Arzhannikova1,2, V.A. Volodin1,2, G.N. Kamaev1,2, S.A. Kochubei1, I.G. Neizvestny1 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia

15.50

O1-16

Charges and states in nitrided buried dielectrics of SOI structures. V. P. Popov, I.E. Tyschenko. Institute of Semiconductor Physics, Novosibirsk, Russia.

Auditorium A

Session 5. Superconducting Structures and Devices I

Session Chairman: Vladimir Lukichev, Institute of Physics &Technology RAS, Russia

14.30

L1-06

INVITED: Thermo-Electric Charge-to-Voltage Converter with an SIN Tunnel Junction for Bolometer Applications. L. Kuzmin. Chalmers University of Technology, Goteborg, Sweden.

15.00

O1-17

DC SQUID modulation electronics for operation with HTS DC SQUID magnetometers in the unshielded environment. E.V. Burmistrov, V.Yu. Slobodchikov, V.V. Khanin, Yu.V. Maslennikov. Kotel’nikov Institute of Radio Engineering and Electronics of RAS, Moscow, Russia

15.20

O1-18

Properties of planar Nb/?-Si/Nb Josephson junctions with various doped degree of ?-Si interlayers. A.L. Gudkov, A.A. Gogin, A.I. Kozlov, A.N. Samys. CJSC “Compelst”, FSUE “SRIPP n. F.V. Lykin”,  Moscow,  Zelenograd, Russia

15.40

O1-19

The theoretical analysis of  the new microwave detector based on a Josephson heterostructure. I.A. Devyatov1,  M.Yu. Kupriyanov2 . 1. Lomonosov Moscow State University, Russia 2. Skobeltsyn Institute of Nuclear Physics, Moscow, Russia

16.00

O1-20

«Сonventional» SQUIDs and quantum interferometers on matter waves in superfluid helium. A. Golovashkin1, G. Izmaїlov2, G. Kuleshova3, A. Tshovrebov1, L. Zherikhina1 . 1. Lebedev Physical Institute, Russian Academy of Science, Moscow, Russia; 2. Moscow Aviation Institute (State Technical University), Moscow,  Russia 3. Moscow Engineering Physics Institute (State University) , Moscow, Russia

Auditorium B

Session 6. Thin Films

Session Chairman: Andrey Vasiliev, FSU Enterprise“Pulsar”, Russia

14.30

O1-21

The thermodynamic theory of interfacial adhesion between materials containing point defects. R. Goldstein1, T. Makhviladze2, M. Sarychev2 1. Institute for Problems in Mechanics, Russian Academy of Sciences, Russia, 2. Institute of Physics and Technology, Russian Academy of Sciences, Russia.

14.50

O1-22

The thickness-dependence of the polariton effect in the single quantum well. Yu.V. Moskalev1, S.B. Moskovski2. 1. Yaroslavl State Pedagogical University, Yaroslavl, Russia, 2. Yaroslavl State University, Yaroslavl, Russia

15.10

O1-23

CoSi2/TiO2/SiO2/Si gate structure formation. A.E. Rogozhin 1, I.A Khorin 1,2, V.V. Naumov 1, A.A. Orlikovsky 1, V.V. Ovcharov 1, V.I. Rudakov 1, A.G. Vasiliev 1,3 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia, 2. Moscow State Institute of Radio-engineering, Electronics and Automation, Moscow, Russia, 3. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia

15.30

O1-24

Local performances of PZT films with a thickness less than 100 nanometers. V.M Roshchin, M.V. Silibin. Moscow Institute of Electronic Technologies (Technical University), Zelenograd, Russia

15.50

O1-25

Polysilicon Inductive Elements for IC’s. A.M. Pashayev, F.D. Kasimov., R.A. Ibragimov. National Academy of Aviation, Baku, Azerbaijan

16.30-17.00 Coffee break. Winter garden.

Conference Hall

Session 7. Devices and ICs

Session Chairman: Boris Konoplev,
Taganrog Institute of Technology – Southern Federal University, Russia

17.00

O1-26

SiGe and GaN heterostructure microwave devices. A.G. Vasiliev, Y.V. Kolkovsky, S.V. Korneev, A.A. Dorofeev, V.M. Minnebaev. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia

17.20

O1-27

Methods of cache memory optimization for multimedia applications. A. Kravtsov. JSC Mikron, Moskow, Zelenograd, Russia

17.40

O1-28

Integrated Injection Laser with Amplitude Modulation in Terahertz Band. B. Konoplev1,2, E. Ryndin2, M. Denisenko1. 1. Taganrog Institute of Technology – Southern Federal University, Taganrog, Russia, 2. Southern Scientific Center of Russian Academy of Sciences, Rostov-on-Don, Russia

18.00

O1-29

Gas medium influence on characteristics stability of electroformed structures Si-SiO2-W and reliability of switching processes of memory elements on the basis of these structures. V.M. Mordvintsev, S.E. Kudryavtsev, V.L. Levin, L.A. Tsvetkova. Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Russia

18.20

O1-30

Low-resistance Ge/Au/Ni/Ti/Au based ohmic contact to n-GaAs. E. Erofeev1, V. Kagadei2. 1. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia, 2. Research and production company “Micran”, Tomsk, Russia

Auditorium A

Session 8. Superconducting Structures and Devices II

Session Chairman: Mikhail Kupriyanov, Institute of Nuclear Physics, Moscow State University, Russia.

17.00

O1-31

Manipulating superconductivity with magnetism: from unconventional physical effects to cryogenic spintronics. L.R. Tagirov. Solid State Physics Department, Kazan State University, Kazan, Russia

17.20

O1-32

Magnetic field-tuned superconductor-insulator transition in PbTe/PbS heterostructures with superconducting interface. O. Yuzephovich1,2, S. Bengus1,2, M. Mikhailov1, A. Sipatov3, E. Buchstab4, N. Fogel4 1. Institute for Low Temperature Physics and Engineering, Kharkov, Ukraine,  2. International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland 3. National Technical University “Kharkov Polytechnical Institute” Kharkov, Ukraine 4. Solid State Institute, Technion, Haifa, Israel

17.40

O1-33

Could equilibrium noise be detected with help of series-connected asymmetric superconducting rings? V.L. Gurtovoi,  A.I. Ilin, A.V. Nikulov, V.A. Tulin. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia

18.00

O1-34

Superconductivity of polymers with charge injection doping. A.N. Ionov1, R. Rentzsch2. 1. A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia, 2. Institut fur Experimentalphysik, Freie Universitat Berlin, Berlin, Germany

Auditorium B

Session 9. Photonics and Optoelectronics II

Session Chairman: Sergey Nikitov, Institute of Radioengineering and Electronics RAS, Russia

17.00

O1-35

CMOS color image sensors. Current state and aspects. V.A. Gergel1, I.V. Vanyushin2 . 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia.2.  LCC “SensorIС”, Moscow, Russia

17.20

O1-36

Monolithic photodetector 32×32. A.V. Sorochkin, M.V. Yakushev, S.A. Dvoretsky, A.I. Kozlov, I.V. Sabinina, Y.G. Sidorov, B.I. Fomin, A.L. Aseev. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia

17.40

O1-37

Improvement of Radiation Resistance of Multijunction Solar Cells by Application of Bragg Reflectors. V. Emelyanov, N. Kaluzhniy, S. Mintairov, M. Shvarts, V. Lantratov. Ioffe Physico-Technical Institute of RAS, St.-Petersburg, Russia

18.00

O1-38

Polycrystalline Silicon Short Wave Photodetectors. F.D. Kasimov., N.G. Javadov. National Academy of Aviation, Baku, Azerbaijan

 
19.00 Dinner

Wednesday, October 7th 2009

8.15 Breakfast 

Conference hall

Plenary Session II. Quantum Informatics

Session Chairman: K.A.Valiev, Institute of Physics and Technology, RAS, Russia

8.50

 

Introductory Remarks: Quantum informatics and complex systems. Yu.I. Ozhigov. M.V. Lomonosov Moscow State University, Russia

9.00

qL-01

INVITED: Quantum Mechanics as Emergent Phenomenon. A.  Khrennikov. International center for mathematical modeling in physics, engineering and cognitive science, University of Vaxjo, Sweden

9.30

qL-02

INVITED: Dynamical Decoupling Pushed to the Extreme. V.M. Akulin. Laboratoire Aime Cotton CNRS ,Orsay,  France

10.00

qL-03

INVITED: Tunneling without tunneling: wavefunction reduction in a mesoscopic qubit. J.A. Nesteroff and D. V. Averin. Department of Physics and Astronomy, Stony Brook University,  Stony Brook, NY, USA

10.30

qL-04

INVITED: Superconducting Qubits. E. Il’ichev. Institute of Photonic Technology, Jena, Germany

11.00 Coffee break

Conference Hall

Session 10. Carbon Nanostructures

Session Chairman: Anatoly Vyatkin, Institute of Microelectronics Technologies, RAS, Russia

11.20

L2-01

INVITED: Carbon nanostructures as new material for emission electronics. Yu. V. Gulyaev. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia

12.00

O2-01

Linear-chain carbon films for micro- and nanoelectronics. N.D. Novikov, A.F. Alexandrov, M.B. Guseva, V.V. Khvostov, N.F. Savchenko, Yu.V. Korneeva. Physics Department, M.V. Lomonosov Moscow State University, Moscow,  Russia

12.20

O2-02

Fabrication of device structures from single-walled carbon nanotubes selectively grown on patterned catalytic layers. O.V. Kononenko 1 , V.N. Matveev 1 , Yu.A. Kasumov1, I.I. Khodos1, D.V. Matveev2, V.T. Volkov1, A.I. Il’in1, M.A. Knyazev1 1. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia. 2. Institute of Solid State Physics Russian Academy of Sciences, Chernogolovka, Russia

12.40

O2-03

CNS catalyst growth from carbonaceous substrate. E. Ilyichev, V. Inkin, D. Migunov, G. Petruhin, E. Poltoratskii, G. Rychkov, D. Shkodin. FSUE “Res. Inst. of Phys. Problems named after F.V. Lukin”, Zelenograd

Auditorium A

Session 11. Quantum Informatics II

Session Chairman: Yuri Ozhigov, M.V.Lomonosov Moscow State University, Russia

11.20

q2-01

Simulation of entangled nuclei in two-atom association. B. Aksenov, Yu. Ozhigov. Lomonosov Moscow State University, Russia

11.40

q2-02

Could the Schrodinger’s Cat be used as Quantum Bit? V.V. Aristov, A.V. Nikulov.Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia

12.00

q2-03

Unified Statistical Method for Tomography of Quantum States by Purification. Yu.I. Bogdanov. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

12.20

q2-04

Information aspects of «which way» experiments with microparticles. Yu.I. Bogdanov1, K.A. Valiev1, S.A. Nuyanzin2, A.K. Gavrichenko1. 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia, 2. Moscow Institute of Electronic Technology (Technical University),Zelenograd, Russia

12.40

q2-05

Simulation of electron jumps in the collision of two hydrogen atoms. K. Burtniy1, Yu. Ozhigov1,2. 1. Institute of Physics and Technology, RAS, Moscow, Russia 2. M.V. Lomonosov Moscow State University, Russia

 13.00 Lunch

Conference hall

Session 12. Ion and Plasma Processing

Session Chairman: Alexander Efremov, Ivanovo State University of Chemistry & Technology,  Russia.

14.00

L2-02

INVITEDEvolution of Ion Implantation Technology Towards sub-45 nm Device Fabrication. S. I. Kondratenko, R. N. Reece, M. S. Ameen, M. A. Harris, and L. M. Rubin. Axcelis Technologies, 108 Cherry Hill Drive, Beverly, MA 01915 USA

14.30

L2-03

INVITED: Challenges and future prospects in plasma etching processes. O. Joubert1, E. Pargon1, T. Chevolleau1, G. Cunge1, L. Vallier1, T. David2, S. Barnola2, T. Lill3. 1. LTM (CNRS-UJF-INPG), France 2. CEA-LETI, France. 3. Applied Materials Inc., Santa Clara, USA

15.00

O2-04

The metal hard-mask approach for contact patterning. J.-F. de Marneffe, D. Goossens, D. Shamiryan, F. Lazzarino, Th. Conard, I. Hoflijk, H. Struyf and W. Boullart. IMEC v.z.w., Leuven, Belgium.

15.20

O2-05

Impact of plasma exposure on organic low-k materials. E. Smirnov1,2, A. K. Ferchichi1, C. Huffman1, M. R. Baklanov1. 1. IMEC vzw, Heverlee, Belgium, 2. Moscow Institute of Electronic Technology, Moscow, Russia

15.40

O2-06

Application of Langmuir probe technique in depositing plasmas for monitoring of etch process robustness and for end-point detection. A.V. Miakonkikh, K.V. Rudenko. Institute of Physics and Technology of RAS , Moscow, Russia.

Auditorium A

Session 13. Quantum Informatics III

Session Chairman: A. Tsukanov, Institute of Physics and Technology, RAS, Russia

14.00

qL-05

INVITED: Quantum Measurement of Open Systems. L. Fedichkin. Michigan State University, East Lansing,  USA

14.30

q2-06

Quantum Entanglement and its Observation at Measurement of Magnetic Succeptibility and in Multiple Quantum NMR Experiments. E.B. Fel’dman. Institute of Problems of Chemical Physics of Russian Academy of Sciences, Chernogolovka, Moscow Region

14.50

q2-07

The qubit states decoherence in antiferromagnet-based nuclear spin model of quantum register. A.A. Kokin1, V.A. Kokin2. 1. Institute of Physics and Technology of RAS , Moscow, Russia 2. Institute of Radioengineering and Electronics of RAS,  Moscow Russia

15.10

q2-08

Quantum Double Helix. A.Yu. Okulov. General Physics Institute of Russian Academy of Sciences, Moscow, Russia

15.30

q2-09

Time-optimal control of quantum dynamics of a quadrupole nucleus by NMR techniques. V.P. Shauro, V.E. Zobov. L.V.Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russia

15.50

q2-10

Resonant dipole-dipole interaction of a few cold Rydberg atoms in a magneto-optical trap. D.B. Tretyakov1, I.I. Beterov1, V.M. Entin1, I.I. Ryabtsev1, P.L. Chapovsky2 1. Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia, 2. Institute of Automation and Electrometry SB RAS, Novosibirsk, Russia

Auditorium B

Session 14. Simulation and Modeling II

Session Chairman: Tariel Makhviladze, Institute of Physics &Technology RAS,  Russia

14.00

O2-07

Mathematical modeling of a fast neutrals beam source neutralization channel. A.V. Degtyarev, V.P. Kudrya, Yu.P. Maishev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

14.20

O2-08

TCAD technique to simulate total dose effects in SOI MOSFETs. K. Petrosjanc, I. Kharitonov, E. Orekhov. Moscow State Institute of Electronics and Mathematics (Technical University), Moscow, Russia

14.40

O2-09

Optimization of near-surficial annealing for decreasing of depth of p-n-junction in semiconductor heterostructure. E.L. Pankratov. The Mathematical Department, Nizhny Novgorod State University of Architecture and Civil Engineering,, Nizhny Novgorod, Russia

15.00

O2-10

Research of current injection process in to the substrate during digital gate switching. T. Krupkina, D. Rodionov. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia

15.20

O2-11

Extrinsic Compact MOSFET Model with Correct Account of Positive Differential Conductivity after Saturation. V.O. Turin1, A.V. Sedov1, G.I. Zebrev2, B. Iniguez3,M.S. Shur4 1. Orel State Technical University, Orel, Russia,  2. National Research Nuclear University “MEPHI”, Moscow, Russia, 3. Rovira i Virgili University, Tarragona, Spain, 4. Rensselaer Polytechnic Institute, Troy, NY, USA

15.40

O2-12

Informational charge readout dynamics and non-linearity of photosignal characteristics of active pixels in CMOS image sensors. A.V. Verhovtseva, V.A. Gergel’, V.A. Zimoglyad. LLC RPC «SensorIS», Moscow, Russia

16.10 Coffee break

16.30 Entresol. POSTER SESSION I

16.30. Bottom hall. EXHIBITION

17.00. Conference Hall. Presentations of Hi-Tech Companies

17.00

S-05

Surface Metrology measurements; from nanometer to millimeter scale. P. Markus. Veeco Instruments Inc., USA

17.30

S-06

Advances in Cryofree Ultra-Low-Temperatures and integrated high magnetic fields. S. Mitchinson. Oxford Instruments Nanosciences Ltd., UK

19.00 Dinner 

Thursday, October 8th 2009

08.15 Breakfast

Conference hall

Session 15. Nanostructures Fabrication Techniques

Session Chairman: Anatoly Vyatkin, Institute of Microelectronics Technologies, RAS, Russia

09.00

О3-01

Nucleation and growth of Ge nanoislands on pit-patterned Si substrates. J.V. Smagina1, P.L. Novikov1, A.S. Deryabin1, E.E. Rodyakina, D.A. Nasimov1, B.I. Fomin1, V.A. Zinovyev1, A.V. Dvurechenskii1,2 . 1. Institute of Semiconductor Physics  SB RA , Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia.

09.20

O3-02

Nanoscale Si/SiO2 superlattices produced by plasma-chemical technology. S.A. Arzhannikova1,2, M.D. Efremov1,2, A.Kh. Antonenko1,2, V.A. Volodin1,2, G.N. Kamaev1,2, D.V. Marin1,2, S.A. Kochubei1, A.A. Voschenkov1 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia

09.40

O3-03

Impurity activation and nanocrystals formation using excimer lasers. M.D. Efremov1,2, S.A. Arzhannikova1,2, V.A. Volodin1,2, G.N. Kamaev1,2, S.A. Kochubei1, I.G. Neizvestny1. 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia

10.00

O3-04

Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films. V.A. Volodin1,2, T.T. Korchagina1, G.N. Kamaev1, A.H. Antonenko1, J. Koch3, B.N. Chichkov3. 1. Institute of Semiconductor Physics, Russian Academy of Sciences, , Novosibirsk, Russia, 2. Novosibirsk State University, Novosibirsk, Russia. 3. Laser Zentrum Hannover, Hannover, Germany

10.20

O3-05

Optical diagnostics of GaAs nanoheterostructures growth processes. I.P. Kazakov, E.V. Glazyrin, V.I. Tsekhosh. P.N. Lebedev Physical Institute of Russian Academy of Sciences, Moscow, Russia

10.40

O3-06

Low voltage micro lens ion beam column for nano-patterning with resolution of 1.5?2 nm. Numerical simulation and prospects. V.A. Zhukov1, S. Kalbitzer2, A. I. Titov3 1. Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia,  2. Ion Beam Technology, D-69121 Heidelberg, Germany, 3. St. Petersburg State Technical University, St. Petersburg, Russia

Auditorium A

Session 16. Quantum Informatics IV

Session Chairman: Yu.I.Bogdanov, Institute of Physics and Technology, RAS, Russia

09.00

q3-01

Quantum computer without uncontrollable Coulomb interaction among space-based qubits. S. Filippov, V. VyurkovInstitute of Physics and Technology, RAS, Moscow, Russia

09.20

q3-02

Quantum information transfer protocol via optimized single-electron transport in semiconductor nanostructure. A.V. Tsukanov. Institute of Physics and Technology, RAS, Moscow, Russia

09.40

q3-03

Outlook for the application of Ge/Si quantum dots in quantum calculations. A. Zinovieva1, A. Nenashev1, A. Dvurechenskii1, A.I. Nikiforov1,  A. Lyubin1, L. Kulik2. 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia, 2. Institute of Chemical Kinetics and Combustion, Novosibirsk, Russian Academy of Sciences  Russia

10.00

q3-04

The quantum dynamics of two coupled large spins. V.E. Zobov. L.V. Kirensky Institute of Physics, SB Russian Academy of Sciences,Krasnoyarsk, Russia

10.20

q3-05

Can entanglement fluctuate? M. A. Yurishchev. Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Russia

Auditorium B

Session 17. Simulation and Modeling III

Session Chairman: Igor Abramov, Belarusian State University of Informatics & Radioelectronics, Belarus

9.00

O3-07

The influence of the suboxide layer structure on equivalent oxide thickness in nanoscale MIS-structure. N.A. Zaitsev, G.Ya Krasnikov, Matyushkin I.V. Micron Corp., Moscow, Zelenograd, Russia

9.20

O3-08

Semi-analytical model of a field-effect transistor with an ultra-thin channel. A. Khomyakov, V. Vyurkov. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

9.40

O3-09

Impact of channel inhomogeneities on characteristics of a quantum field-effect transistor. V. Vyurkov, I. Semenikhin, V. Lukichev, A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

10.00

O3-10

Bulk and Nanoribbon Graphene Field-Effect Transistor Modeling. G.I. Zebrev1, E.A. Zotkin1, А. Tselykovskiy1, E.V. Melnik1, V.O. Turin2 . 1. Micro- and Nanoelectronics Department, National Research Nuclear University “MEPHI”, Moscow, Russia, 2. Orel State Technical University, Orel, Russia

10.20

O3-11

Electron optical spin polarization in broken-gap heterostructures. A. Zakharova1, K. A. Chao2, I. Semenikhin1. 1. Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia,  2. Department of Physics, Lund University, Lund, Sweden, and Department of Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden

11.00 Coffee break 

Conference hall

Session 18. Magnetic Micro- and Nanostructures

Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS,  Russia

11.30

O3-12

High-temperature magnetization and Mossbauer spectra of nanoparticles in a weak magnetic field. M. A. Chuev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia.

11.50

O3-13

Mossbauer study of nanomagnetics. V.I. Bachurin1, I.N. Zakharova1, M.A. Shipilin2, A.M. Shipilin3 . 1. Yaroslavl State Technical University, Yaroslavl, Russia, 2. P.G.Demidov Yaroslavl State University, Yaroslavl, Russia, 3. M.V. Lomonosov Moscow State University, Moscow, Russia

12.10

O3-14

Ferromagnetic resonance and magnetoelastic demodulation in giant magnetostriction TbCo2/FeCo nanostructured thin film. A. Klimov1,2, Yu. Ignatov2, S. Nikitov2, N. Tiercelin1, V. Preobrazhensky1,3, P. Pernod1. 1. LEMAC–IEMN CNRS, Ecole Centrale de Lille, France 2. Kotel’nikov Institute of Radioengineering and Electronics (IRE RAS),Moscow, Russia 3. Wave Research Center, A.M. Prokhorov General Physics Institute RAS, Moscow, Russia

12.30

O3-15

Odd-even effects in magnetic nanostructures. V.V. Kostyuchenko. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl, Russia

12.50

O3-16

Magnetoresistance of multilayer ferromagnetic nanoparticles. S.N. Vdovichev, A.A. Fraerman, B.A. Gribkov, S.A. Gusev, A.Yu. Klimov, V.L. Mironov, V.V. Rogov. Institute for Physics of Microstructures, Russian Academy of Science, Nizhniy Novgorod, Russia

Auditorium A

Session 19. Quantum Informatics V

Session Chairman: Yuri Ozhigov, M.V.Lomonosov Moscow State University, Russia

11.30

q3-06

Quantum cryptography system using phase-time coding and resistant to PNS attack. D.A. Kronberg1 , S.N. Molotkov1,2,3 1. Faculty of Computational Mathematics and Cybernetics, Moscow State University, Moscow, Russia 2. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia. 3. Academy of Cryptography of the Russian Federation, Moscow, Russia

11.50

q3-07

Entanglement measure for multipartite pure states and its numerical calculation. A. Yu. Chernyavskiy. Institute of Physics & Technology of RAS (FTIAN), Moscow, Russia

12.10

q3-08

Quantum Computing with Collective Ensembles of Multilevel Systems. E. Brion, K. Molmer, and  M. Saffman. Laboratoire Aime Cotton (CNRS), Orsay, France

12.30

q3-09

Spin-1/2 systems with simple two- and three-dimensional geometrical configurations: state transfer and entanglement between different nodes. S.I. Doronin, E.B. Fel’dman and A.I. Zenchuk  Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow reg., Russia

12.50

q3-10

Flux-qubit and the law of angular momentum conservation. A.V. Nikulov. Institute of Microelectronics Technology, Russian Academy of Sciences,Chernogolovka, Moscow District, Russia.

Auditorium B

Session 20. Micro- and Nanostructures Characterization I

Session Chairman: Eduard Rau, Moscow State University, Moscow, Russia

11.30

O3-17

SEM Probe Defocusing Method of Measurement of Linear Sizes of Nanorelief Elements. M.N. Filippov1, Yu.A. Novikov2, A.V. Rakov3, P.A. Todua3. 1. N.S. Kurnakov General and Inorganic Chemistry Institute of the Russian Academy of Sciences, Moscow, Russia, 2. A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia. 3. Center for Surface and Vacuum Research, Moscow, Russia

11.50

O3-18

SEM Relief Structure Images with Trapezoid Profile and Big Inclination Angle of Side Walls in Back Scattered Electrons. M.N. Filippov1, Yu.A. Novikov2, A.V. Rakov3, P.A. Todua3. 1. N.S. Kurnakov General and Inorganic Chemistry Institute of the Russian Academy of Sciences, Moscow, Russia, 2. A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia. 3. Center for Surface and Vacuum Research, Moscow, Russia

12.10

O3-19

Combined electron-beam method of the diagnostic of microelectronic structures in scanning electron microscopy. F.A. Lukyanov1 , N.A. Orlikovsky2 , E.I. Rau3 , R.A. Sennov3. 1. Moscow State University, Moscow, Russia 2. Institute of Physic and Technology RAS, Moscow, Russia. 3. Institute of Microelectronics Technology RAS, Chernogolovka, Moscow Region, Russia

12.30

O3-20

Problems of AFM-investigations of open sandwich MIM-structures. E.S. Gorlachev, V.M. Mordvintsev, V.L. Levin. Yaroslavl Branch of the Institute of Physics and Technology RAS, Yaroslavl, Russia

12.50

O3-21

Correct measurements of capacity using atomic force microscope. A.A. Chouprik, A.S. Baturin. Moscow Institute of Physics and Technology, Dolgoprudny, Russia

13.20 Lunch

Conference hall

Session 21. Plasma Physics and Technologies

Session Chairman: Konstantin Rudenko, Institute of Physics &Technology RAS,  Russia

14.20

L3-01

INVITED: Problems of nano-sized and high aspect ratio features plasma etching. V. Lukichev1, K. Rudenko1, A. Orlikovsky1, V. Yunkin21. Institute of Physics & Technology (FTIAN) 2. Institute of Microelectronics Technology,Russian Academy of Sciences, Russia

14.50

O3-22

Modeling of plasma reactive ion etching of ultra high aspect ratio Si trenches. I.I.Amirov1, A.S.Shumilov1, A.N.Kupriynov1, V.F.Lukichev2 . 1. Institute RAS  Yaroslavl branch of the Institute of Physics & Technology RAS, Yaroslavl, Russia, 2. Institute of Physics & Technology (FTIAN), Russian Academy of Sciences, Moscow, Russia

15.10

O3-23

Plasma parameters and active particles kinetics in HBr dc glow discharges. A. Smirnov1,2, A. Efremov1, V. Svettsov1, A. Islyaykin2. 1. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia, 2. Mikron JSC, Zelenograd, Moscow, Russia

15.30

O3-24

Mechanisms of film deposition from BCl3-based plasma during dry etching. D. Shamiryan1 , A.M. Efremov2 , V. Serlenga3 , M.R. Baklanov1, W. Boullart1. 1. IMEC, Leuven, Belgium 2. Ivanovo State University of Chemistry and Technology, Ivanovo, Russia 3. Instituto Universitario di Studi Superiori, Pavia, Italy

15.50

O3-25

Excitation Mechanism of the B+ Emission Line at 345.1 nm in Low-Temperature Plasma. V.P. Kudrya. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

Auditorium A

Session 22. Quantum Informatics VI

Session Chairman: Yuri Ozhigov, M.V.Lomonosov Moscow State University, Russia

14.20

q3-11

Implementation of the quantum order-finding algorithm by adiabatic evolution of two qubits. A.S. Ermilov, V.E. Zobov. L. V. Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, 660036, Krasnoyarsk, Russia

14.40

q3-12

NMR Saturation and Entanglement in Solids. M. Kutcherov. Siberian Federal University, Krasnoyarsk, Russia

15.00

q3-13

Quantum Scattering on Dypole Potential in Adiabatic Approximation. K.S. Arakelov. M.V.Lomonosov Moscow State University, Russia

15.20

16.20

Round Table Discussion: Quantum Systems in Computer Simulation

Auditorium B

Session 23. Micro- and Nanostructures Characterization II

Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS,  Russia

14.20

O3-26

De-processing technologies for modern VLSI based on grazing incident ion beams. A.F. Vyatkin. Institute of Microelectronics Technologies, Russian Academy of Sciences, Chernogolovka, Russia

14.40

O3-27

Development of computer methods for multi nano-layer parameters measurements by X-Ray reflectometry. N.N. Gerasimenko1, D.A. Kartashov2, A.G. Turyansky3 . 1. Moscow Institute of Electronic Technology, Moscow, Zelenograd, Russia, 2. JSC Mikron, Moscow, Zelenograd, Russia, 3.LPI, Moscow, Russia

15.00

O3-28

Experimental scheme for observation of anomalous Kossel effect in semiconductor structures. P.G. Medvedev, M.A. Chuev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

15.20

O3-29

Structural Investigation of Magnetic Digital Alloys. I.A. Subbotin1, M.A. Chuev2, V.V. Kvardakov1, I.A. Likhachev1, E.M. Pashaev1. 1. Russian Research Center “Kurchatov Institute”, Moscow, Russia. 2. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

15.40

O3-30

Spectroscopic and scanning ellipsometry for investigation of surfaces, thin films and nanolayers. V. Tolmachev1, T. Zvonareva1, L. Portzel1, V. Kudoyarova1, T. Perova2, V. Shvets3, S. Rykhlitskii3 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia 2. Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland, 3. Semiconductor Physics Institute SB RAS, Novosibirsk, Russia

16.00

O3-31

Temperature of one-side polished silicon wafer at different position relatively incoherent radiance source. V.I. Rudakov, V.V. Ovcharov, V.P. Prigara. Yaroslavl Branch of Institute of Physics and Technology RAS

16.30 Coffee break

16.45 Entresol. POSTER SESSION II

Bottom hall. EXHIBITION

18.45. Conference Hall. CLOSING CONFERENCE REMARKS
А.А. Orlikovsky, Chair of Organizing Committee ICMNE-2009,
Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

19.30 BANQUET

Friday, October 9th, 2009

09.00 Breakfast

10.00  DEPARTURE

Welcome to the new website of the International Conference on Micro- and Nanoelectronics – 2023.

General information

The 14th International Conference “Micro- and Nanoelectronics – 2021” (ICMNE-2021) including the extended Session “Quantum Informatics” will be held on October 4-8, 2021 at the park-hotel “Ershovo”, Zvenigorod, Moscow Region, Russia in a hybrid online/offline format. It continues the series of the All-Russian Conferences MNE-1999, MNE-2001, QI-2002 and the International Conferences ICMNE-2003, QI-2004, ICMNE-2005, QI-2005, ICMNE-2007, QI-2007, ICMNE-2009, QI-2009, ICMNE-2012, QI-2012, ICMNE-2014, QI-2014, ICMNE-2016, QI-2016, ICMNE-2018, and QI-2018.

   ICMNE is a biannual event covering the main fields of micro- and nanoelectronic technologies and device physics. ICMNE-2021 will be focused on recent progress in that area. The round table “The origins and prospects of microelectronics in Russia: to the 90th anniversary of academician K.A. Valiev” will be held during the conference.

Scope:

Physics of micro- and nanodevices:

  • Scaling challenges and opportunities for nanodevices
  • Nanoscale transistors: CMOS FET, TFET, SET, molecular transistors, molecular switches, etc.
  • Integrated memory devices, DRAM, ReRAM, FeRAM
  • Devices with 1D and 2D channels
  • Carbon micro- and nanoelectronics
  • Solid state devices for THz generation and detection
  • Magnetic micro- and nanostructures, spintronic devices
  • Superconducting micro- and nanodevices and structures
  • Devices for optoelectronics, photonics
  • Sensors, micro- and nanoelectromechanical systems (MEMS, NEMS, BioMEMS)
  • Device simulation and modeling

Technology and characterization of materials for micro- and nanoelectronics:

  • Si, SOI, SiGe, A3B5, A2B6
  • High-k dielectrics, low-k dielectrics
  • Metal films for device structures
  • 1D and 2D materials
  • Magnetic materials, nanomagnetics
  • Materials for optoelectronics and photovoltaic, metamaterials

Technologies and advanced equipment for micro- and nanoelectronics:

  • Lithography: immersion, EUV, electron and ion lithography, nanoimprint
  • Front-end of line (FEOL) processes in ULSI’s technology
  • Back-end of line (BEOL) processes in ULSI’s technology
  • 3D integration technologies
  • Technologies for 2D materials (graphene, MoS2, WS2, etc.)
  • Technologies for 1D structures (nanowires, nanotubes)
  • Technologies for MEMS and NEMS
  • Technologies for superconducting devices

Metrology:

  • In situ processes monitoring and control (end-point detection, process smart sensors)
  • Inspections, metrology, and characterization of micro- and nanostructures

Quantum informatics:

  • Quantum computers: theory and experiments
  • Quantum measurements
  • Quantum algorithms
  • Quantum communications
  • Quantum sensors

Organizers and Sponsors:

  • Department of Nanotechnologies and Information Technologies of the Russian Academy of Sciences, Russia
  • Valiev Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia
  • JSC Molecular Electronics Research Institute, Zelenograd, Russia
  • TechoInfo, Ltd., Wembley, UK
  • NIX Company, Moscow, Russia
  • SPIE – The International Society for Optical Engineering
  • Journal “Russian Microelectronics”, Moscow, Russia/Springer, Germany

Language:

 The working language of ICMNE-2021 is English.

Abstracts Submission:

   Contributions to the Conference topics are welcome from the academic community, universities, as well as from the R&D divisions of the industry. The Program Committee will give preference to the papers which contain the results of recent original works consistent with the Conference scope. The abstracts and full manuscripts shoul be written in clear and concise English.

   The Conference program will be comprised of invited and contributed papers. The contributed papers will be reviewed by the members of the Program Committee on the basis of submitted abstracts for their being in theme with the Conference, and for their scientific quality. The Program Committee will determine the session (oral or poster) on which the corresponding paper will be presented. Author’s preferences will also be taken into consideration.

   You can download the single page abstract template in the Downloads section of the Conference website. Please, submit the files with abstracts to the ICMNE-2021 Local Organizing Committee at the address icmne2021@gmail.com.

Deadline for abstracts submission is August 8, 2021.

Proceedings:

    Proceedings of the 14th International Conference “Micro- and Nanoelectronics – 2021” (ICMNE-2021) including the extended Session “Quantum Informatics” will be issued as:

1. A Book of Abstracts (indexed by the Russian Science Citation Index, e-library.ru). It will be available in print before the Conference. Besides an e-version will be available at the Conference site in the PDF format.

2. A separate volume of the Proceedings of SPIE (indexed by Web of Science, SCOPUS) dedicated to ICMNE-2021 will be available after the Conference termination. The full-text papers will be published at the request of the authors and only if the corresponding oral talks or posters were presented by the authors at the Conference.

   The Proceedings of this conference will be published in the SPIE Digital Library along with over 500,000 papers from other outstanding conferences and SPIE Journals and books from SPIE Press.

   The authors should prepare manuscripts of the full-text papers according to the SPIE Manuscript Specifications and submit it by the Author Submission & Chair Review System service. The manuscripts should be written in clear and concise English. The paper length should be in the range of 6-12 pages. The full-text manuscripts should be sent to SPIE by November 9, 2021.

Due to COVID restrictions, the deadline for article submission is extended until November 16, 2021.

    A SPIE Transfer of Copyright form will need to be signed by at least one author of the manuscript and returned to SPIE. The completed form should be returned to SPIE by the contact-author uploading it into our system.

    Authors should also transfer the electronic copy of manuscripts and the filled Copyrights Forms to the ICMNE-2021 Local Organizing Committee. Otherwise the manuscript will be rejected.

   The papers not presented and discussed at ICMNE-2021 will not be published in the Proceedings.

General information

   The International Conference “Micro- and Nanoelectronics – 2018” (ICMNE-2018) including the extended Session “Quantum Informatics” (QI-2018)  will be held on October 1-5, 2018 at the park-hotel “Ershovo”, Zvenigorod, Moscow Region, Russia. It continues the series of the All-Russian Conferences “MNE-1999”, “MNE-2001”, “QI-2002” and the International Conferences “ICMNE-2003”, “QI-2004”, “ICMNE-2005”, “QI-2005”, “ICMNE-2007”, “QI-2007”, “ICMNE-2009”, “QI-2009”, “ICMNE-2012”, “QI-2012”, “ICMNE-2014”, “QI-2014”, “ICMNE-2016” and “QI-2016”.

   ICMNE is a biannual event covering the main fields of micro- and nanoelectronic technologies and device physics. ICMNE-2018 will be focused on recent progress in that area. The Conference will include the exhibition of equipment for micro- and nanoelectronics.

   In 2018, within the framework of the conference, a round table Russia-Japan will be held with the participation of leading scientists.

Scope:

Physics of micro- and nanodevices:

  • Scaling challenges and opportunities for nanodevices
  • Nanoscale transistors: CMOS FET, TFET, SET, molecular transistors, molecular switches, etc.
  • Integrated memory devices, DRAM, ReRAM, FeRAM
  • Devices with 1D and 2D channels
  • Carbon micro- and nanoelectronics
  • Solid state devices for THz generation and detection
  • Magnetic micro- and nanostructures, spintronic devices
  • Superconducting micro- and nanodevices and structures
  • Devices for optoelectronics, photonics
  • Sensors, micro- and nanoelectromechanical systems (MEMS, NEMS, BioMEMS)
  • Device simulation and modeling

Technology and characterization of materials for micro- and nanoelectronics:

  • Si, SOI, SiGe, A3B5, A2B6
  • High-k dielectrics, low-k dielectrics
  • Metal films for device structures
  • 1D and 2D materials
  • Magnetic materials, nanomagnetics
  • Materials for optoelectronics and photovoltaic, metamaterials

Technologies and advanced equipment for micro- and nanoelectronics:

  • Lithography: immersion, EUV, electron and ion lithography, nanoimprint
  • Front-end of line (FEOL) processes in ULSI’s technology
  • Back-end of line (BEOL) processes in ULSI’s technology
  • 3D integration technologies
  • Technologies for 2D materials (graphene, MoS2, WS2, etc.)
  • Technologies for 1D structures (nanowires, nanotubes)
  • Technologies for MEMS and NEMS
  • Technologies for superconducting devices

Metrology:

  • In situ processes monitoring and control (end-point detection, process smart sensors)
  • Inspections, metrology, and characterization of micro- and nanostructures

Quantum informatics:

  • Quantum computers: theory and experiments
  • Quantum measurements
  • Quantum algorithms
  • Quantum communications

Organizers and Sponsors:

  • Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia
  • NIIME, Moscow, Russia
  • Russian Foundation for Basic Research, Moscow, Russia
  • Russian Academy of Sciences, Division of Nano- and Information Technologies, Russia
  • SPIE – The International Society for Optical Engineering
  • Rzhanov Institute of Semiconductor Physics of the Russian Academy of Sciences (the Siberian Branch), Novosibirsk, Russia
  • M.V. Lomonosov Moscow State University, Moscow, Russia
  • P.G. Demidov Yaroslavl State University, Yaroslavl, Russia
  • TechoInfo, Ltd., Wembley, UK
  • NIX Company, Moscow, Russia

Language:

   The working language of ICMNE-2018 is English.

Abstracts Submission:

   You can download the single page abstract template in the Downloads section of the Conference website. Please, submit the files with abstracts to the ICMNE-2018 Local Organizing Committee at the address icmne2018@gmail.com.

Now you can download the Book of Abstracts.

Proceedings:

   The Proceedings of this conference are published in the SPIE Digital Library along with nearly 460,000 papers from other outstanding conferences, SPIE Journals and chapters from SPIE Press books.

   SPIE will publish the full-text papers in a separate volume of the Proceedings of SPIE dedicated to ICMNE-2018 after the Conference termination. According the rules of SPIE the full-text papers can be published in the Conference proceedings only if the corresponding oral talks or posters were presented by the authors at the Conference.

   The authors should prepare manuscripts of the full-text papers according to the rules of the SPIE Proceedings (see the Downloads section) and submit it by the Author Submission & Chair Review System service. The manuscripts should be written in clear and concise English. The paper length should be in the range of 6-12 pages.

   The full-text manuscripts should be sent to SPIE by November 12, 2018. Authors should also transfer the electronic copy of manuscripts and the filled Copyrights Forms to the ICMNE-2018 Local Organizing Committee. Otherwise the manuscript will be rejected.

   The papers not presented and discussed at ICMNE-2018 will not be published in the Proceedings.