admin-icmne, Автор в IC - MNE – Страница 3 из 3

Информация о IC MNE 2007 и QI 2007 — Стендовые доклады

On: 28.03.2023

ICMNE-2007 AND SYMPOSIUM QI-2007 SCIENTIFIC PROGRAM

(Final Edition)
(Posters)

Download files:
ICMNE-2007 Oral Presentations
ICMNE-2007 Posters
ICMNE-2007 Delayed Posters
QI-2007 Oral Presentations

October 3th. 2007
Poster session I Entresol
Sub-100 nm Lithography
P1 — 01	A plane wave diffraction on a pin-hole in a film with a finite thickness and real electrodynamic properties. *N. Chkhalo, I. Dorofeyev, N. Salashchenko, M. Toropov* . Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P1 — 02	A new source of a reference spherical wave for a point diffraction interferometer. *N. Chkhalo, A. Klimov, D. Raskin, V. Rogov, N. Salashchenko.* Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P1 — 03	Correction of the EUV mirror substrate shape by ion beam. N. Chkhalo, L. Paramonov, A. Pestov, D. Raskin, N. Salashchenko. Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P1 — 04	Investigation of fluorescence on wavelength 13.5 nm of x-ray tube for nanolithograther. N. Chkhalo, I. Zabrodin, I. Kas’kov, E. Kluenkov, A. Pestov, N. Salashchenko. Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P1 — 05	Well-ordered nanostructures fabricated using nanosphere lithography. A.A. Grunin, V.V. Moskalenko, I.V. Soboleva, A.A. Ezhov and A.A. Fedyanin. Faculty of Physics, M.V.Lomonosov Moscow State University , Moscow , Russia
P1 — 06	Mask Image Formation by Electron Beam Deposition from Vapour Phase. M.A. Bruk 1 , E.N. Zhikharev 2 , S.L. Shevchuk 2 , I.A. Volegova 1 , A.V. Spirin 1 , E.N. Teleshov 1 , V.A. Kalnov 2 , Yu.P. Maishev 2 . 1. Karpov Institute of Physical Chemistry, Moscow , Russia . 2. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
Nanodevices and Nanostructures
P1 — 07	Electron Transition Along а n Atomic Chain. *K.K. Satarin, I.K. Gainullin, I.F. Urazgildin.* M.V. Lomonosov Moscow State University , Department of Physics, Moscow , Russia
P1 — 08	One-Dimentional Heterojunctions with Oriented Carbon Layers. N.D. Novikov, M.B. Guseva, V.G. Babaev, V.V. Khvostov. Department of Physics, Moscow State University , Moscow , Russia
P1 — 09	Ultrafast particle probability transfer in quantum chains. A.A. Gorbatsevich, M.A. Panteleev . Moscow Institute of Electronic Technology ( Technical University ), Moscow , Russia
P1 — 10	Correlation mechanism of negative differential resistance in molecular wire. *Yu. B. Kudasov.* Russian Federal Nuclear Center – VNIIEF, Sarov, Nizhni Novgorod region, Russia
P1 — 11	Effects of spatial reproduction at the interference of the electron waves in semiconductor 1D nanostructures with parabolic quantum wells. V.A. Petrov PP PP , A.V. Nikitin. Institute of Radio Engineering and Electronics, RAS, Moscow , Russia
P1 — 12	Macroscopic quantum oscillator in a two-dimensional conductor. *I. Zhilyaev.* Institute of Microelectronics Technology and High-Purity Materials, RAS, Chernogolovka, Moscow Region , Russia
P1 — 13	The Bohr’s quantization in nanostructures. A.V. Nikulov. Institute of Microelectronics Technology, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District , Russia
P1 — 14	Non-volatile electrically reprogrammable memory matrix on self-forming conducting nanostructures with an integrated transistor electric decoupling of cells. *V. Mordvintsev, S. Kudryavtsev V. Levin, L. Tsvetkova.* Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia
P1 — 15	Intersubband optical transitions in InAs/GaSb broken-gap quantum wells. *I. Semenikhin 1 , A. Zakharova 1 , K. Nilsson 2 , K. A. Chao 2 .* 1. Institute of Physics and Technology, RAS, Moscow , Russia 2 . Department of Physics, Lund University , Sweden
P1 — 16	Plasma oscillations in two-dimensional electron-hole systems. S.A. Moskalenko 1 , M.A. Liberman 2 , E.V. Dumanov 1 , A.G. Stefan 1 and M.I. Shmiglyuk 1 . 1. Institute of Applied Physics of the Academy of Sciences of Moldova , Chisinau, Republic of Moldova 2. Departmant of Physics, Uppsala University , Uppsala , Sweden
P1 — 17	On the melting and crystallization of n -dimensional nanostructures. M. N. Magomedov. Institute for Geothermal Problems, Daghestan Scientific Center of the Russian Academy of Sciences , Makhachkala , Russia
Photonics and Optoelectronics
P1 — 18	Two-dimentional photonic crystals for creating Mach-Zehnder micro-interferometers. *A.V. Chetvertukhin 1 , A.A. Ezhov 1 , A.V. Shobukhov 2 , E.D. Mishina 3 , A.A. Zaitsev 3 , A.S. Sigov 3 , A.A. Fedyanin 1 .* 1.Faculty of Physics, Lomonosov Moscow State University , Moscow , Russia . 2.Faculty of Comp. Math. & Cyber., Lomonosov Moscow State University , Moscow , Russia . 3.Moscow Institute of Radioengineering, Electronics and Automation, Moscow , Russia
P1 — 19	Optical properties of subwavelength metal nanostructures. E. Virchenko, A. Zaitsev, V. Valdner. Moscow State Institute of Radioengineering Electronics and Automation, Moscow , Russia
P1 — 20	Plasmonic Chiral Nanostructures with Extraordinary Optical Transmission. *M.R. Shcherbakov 1 , P.P. Vabishchevich 1 , A.A. Zaitsev 2 , A.S. Sigov 2 , V.O. Valdner 2 , A.A. Fedyanin 1 .* 1. Faculty of Physics, Lomonosov Moscow State University , Moscow , Russia . 2. Moscow Institute of Radioengineering, Electronics and Automation, Moscow , Russia
P1 — 21	Surface electromagnetic waves in one-dimensional photonic crystals. *E.M. Murchikova , M.D. Khokhlova, I.V. Soboleva and A.A. Fedyanin.* Faculty of Physics, M.V. Lomonosov Moscow State University , Moscow
P1 — 22	Symmetric Difference Scheme for Two-Dimensional Photonic Crystal Modeling. *A.V. Shobukhov 1 , A.A. Fedyanin 2 .* 1. Faculty of Comp. Math. & Cyber., Lomonosov Moscow State University , Moscow , Russia . 2. Faculty of Physics, Lomonosov Moscow State University , Moscow , Russia
P1 — 23	Micro-scale domain structure formation by e-beam point writing on the Y cut surfaces of LiTaO 3 crystals. L.S.Kokhanchik , D.V.Punegov. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Siences , Chernogolovka , Russia
P1 — 24	Single Photon Current Impulses Statistics of the Small Square Silicon Avalanche Photodiodes in Geiger’s Mode. *I.V. Vanyushin 2 , A.V. Verhovtseva 2 , A.V. Gergel’ 1 , N.M. Gorshkova 1 , V.M. Gontar` 2 , V.A. Zimoglyad 2 , Yu.I. Tishin 2* 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow , Russia.2. LCC “Unique IC`s”, Moscow Russia
P1 — 25	Silicon avalanche photodiodes for particle detection. *I.B. Chistokhin 1 , O.P. Pchelyakov 1 , E.G. Tishkovsky 1 , V.I. Obodnikov 1 , V.V. Maksimov 2 , A.A. Ivanov 2 , E. Gramch 3* . 1. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia . 2. Budker Institute of Nuclear Physics, Russian Academy of Sciences, Novosibirsk , Russi . 3. Dept. Fisica, Universidad de Santiago, Santiago, Chile
P1 — 26	Electro-optical optimization of p-contact to raise efficiency of light -emitting diodes. S. Shapoval, M.Yu. Barabanenkov, V. Sirotkin, L. Saptsova, A. Kovalchuk, V. Zemlyakov * , N. Antonova * , A. Tsasulnikov † , W. Lundin † , E. Zavarin † , A. Sakharov † , V. Ustinov † . Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia . R&D Corporation «Istok», Fryazino, Moscow region, Russia .* † Ioffe Physico-Technical Institute RAS, St. Petersburg , Russia
Devices and ICs
P1 — 27	Radiation Induced Leakage Due to Stochastic Charge Trapping in Isolation Layers of Nanoscale MOSFETs. *G.I. Zebrev, M. S. Gorbunov, V. S. Pershenkov .* Department of Microelectronics, Moscow Engineering Physics Institute, Russia
P1 — 28	Role of Parasitic Bipolar Effect in Modern Partially Depleted SOI CMOS Technologies. *V.E. Shunkov 1 , M.S. Gorbunov 1 , G.I. Zebrev 1 , B.V. Vasilegin 2* . 1. Department of Microelectronics, Moscow Engineering Physics Institute, Russia 2. Science Research Institute for System Study, Russian Academy of Science , Moscow , Russia
P1 — 29	Accelerator Based Facility for Characterization of Single Event Upsets (SEU) and Latchups (SEL) in Digital Electronic Components. V.S. Anashin 1 , V.V. Emelyanov 2 , G.I. Zebrev 3 , I.O. Ishutin 1,3 , N.V. Kuznetsov 4 , B.Yu. Sharkov 5 , Yu.A. Titarenko 5 , V.F. Batyaev 5 , S.P. Borovlev 5 1. SpaceDevice Engineeing Institute, Federal Space Agency, Moscow , Russia . 2. Research Institute of Scientific Instruments, Lytkarino , Russia . 3. Department of Microelectronics, Moscow Engneering Physics Institute, Russia . 4. Institute of Nuclear Physics , Moscow State University , Russia . 5. Institute of Theoretical and Experimental Physics, Moscow , Russia
P1 — 30	5W/mm Gallium Nitride Power HEMT. *A. Vasiliev, A. Dorofeev, Yu. Kolkovsky, V. Minnebaev.* Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
P1 — 31	Research of the disbalance mechanism of dual collector lateral bipolar magnetotransistor. R.D. Tikhonov 1 , S.A. Polomoshnov 1 , A.V. Kozlov 2 , A.Ju. Krasukov 2 . 1. SMC «Technological Centre» MIEE, Moscow , Zelenograd , Russia . 2. MIET, Moscow , Russia
P1 — 32	The analysis of mismatch of physical and technical parameters of semiconductor devices. *N. Zaitsev 1* *, Y. Brukhova 1 .* 1. Moscow Institute of Electronic Technology, Technical University , Moscow , Russia
P1 — 33	High Efficiency Carbon Fiber Cold Cathode . *Babaev V.G., Khvostov V.V., Guseva M.B., Savchenko N.F., Belokoneva Yu.G.* Department of Physics, Moscow State University , Moscow , Russia
P1 — 34	Multicathode vacuum nanotriode as possible switch for integrated circuits of vacuum nanoelectronics. V.A. Zhukov . Institute for Informatics and Automation, Russian Academy of Sciences , St. Petersburg , Russia
P1 — 35	Portable fuel cells with micro channel silicon application. V.V. Grinko, N.V. Lapin, A.F. Vyatkin. Institute of Microelectronics Technology RAS, Chernogolovka, Moscow District , Russia
P1 — 36	Technology covering solder past with high resolution. Soldering defects. *Timoshenkov S.P., Antonov М.А., Seregin А.V.* Institute of Electronic Technology, Moscow , Russia
Thin Films and Nanostructure Technologies I
P1 — 37	Molecular-beam epitaxy of ultrathin Si films on sapphire. *Pavlov D.A., Shilyaev P.A., Korotkov E.V., Treushnikov M.V.* University of Nizhny Novgorod, Nizhny Novgorod, Russia
P1 — 38	Research and development of technological processes of silicon on insulator structures manufacturing. *V. Kalugin, S. Timoshenkov, Yu. Chaplygin.* Moscow Institute of Electronic Technology ( Technical University ), Moscow , Russia
P1 — 39	Laser Plasma Deposition of thin ZnO films, doped by nitrogen. O.A. Novodvorsky 1 , V.Ya. Panchenko 1 , O.D. Khramova 1 , L.S. Gorbatenko 1 , Ye.A. Cherebilo 1 , G.A. Batishev 1 , C. Wenzel 2 , J.W. Bartha 2 , H. Hiemann 2 , V.T. Bublik 3 , K.D. Chtcherbatchev 3 . 1 Institute on Laser and Information Technologies, Russian Academy of Sciences , Shatura, Moscow Region , Russia . 2 Institute of Semiconductor and Microsystems Technology, University of Technology , Dresden , Germany . 3 Moscow State Institute of Steel and Alloys (TU), Moscow , Russia
P1 — 40	TEM Study of BST Thin Films. *O. Zhigalina 1 , K. Vorotilov 2 , A. Sigov 2 , I. Androsov 2 .* 1. Institute of Crystallography , RAS, Moscow , Russia . 2. State Institute of Radioengineering, Electronics and Automation ( Technical University ), Moscow , Russia
P1 — 41	Films with Regulated Optical and Electrophysical Parameters. A. Akinin 1 ,V. Chernokogin 1 ,Y. Kontsevoy 1 , E. Mitrofanov 2 , V. Pheophilaktov 1 , S. Simakin 2 . 1. Federal State Unitary Enterprise ‘SPE ‘Pulsar’, Moscow , Russia . 2. Federal State Unitary Enterprise ‘Scientific Research Institute of Vacuum Technique named after S.A.Vekshinsky’, Moscow , Russia
P1 — 42	Technology of Multilayer Metallic Thin Films Formation by Electrochemical Deposition Method . *E.Yu. Buchin, E.V. Vaganova, A.V. Prokaznikov .* Institute of Physics & Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
P1 — 43	Studying of the structure of chemical bonds of matrix diamond-like silicon-carbon nanocomposites. A.M. Dodonov, E.A. Skryleva, I.V. Gontar, M.D. Malinkovich, Y.N. Parkhomenko, M.L. Shupegin, A.P. Smirnov. Moscow Institute of Steel and Alloys (Technological university), Moscow , Russia
P1 — 44	T he method of thin metal films adhesion increasing for the lowered dimensions structures. N.L. Kazansky 1 , V.A. Kolpakov 2 , V.D. Paranin 2 , M.S. Polikarpov 2 . 1. Image Processing Systems Institute, Russian Academy of Science, Samara , Russia . 2. Samara State Aerospace University named after S.P. Korolyov, Samara, Russia
P1 — 45	Influence of vacancy clusters on the adhesion properties of interfaces. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 2 . 1. Institute for Problems in Mechanics, RAS, Russia 2. Institute of Physics and Technology, RAS, Russia
P1 — 46	Influence of nanoobjects ( porous and inclusions ) on properties of interfaces of the bonding silicon wafers used for manufacturing of multilayered structures and mems. *1 Timoshenkov S.P., 1 Britkov O.M., 2 Grafutin V.I., 2 Funtikov Yu.V., 1 Kalugin V.V., 1,2 Svetlov-Prokop’ev E.P., 1 Zaluzhnyi A.G.* 1 Moscow Institute of Electronic Technology (Technical University), Zelenograd, Moscow, Russia. 2 «State Science Centre of the Russian Federation — A.I.Alikhanov Institute for theoretical and experimental physics» , Moscow , Russia
Superconducting Structures
P1 — 47	Epitaxial growth of YBCO thin films with unusual orientation. P.B. Mozhaev 1 , J.E. Mozhaeva 1 , J. Bindslev Hansen 2 , C.S. Jacobsen 2 , I.M. Kotelyanskii 3 , V.A. Lusanov 3 . 1. Institute of Physics and Technology, RAS, Moscow , Russia . 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark . 3. Institute of Radio Engineering and Electronics, RAS, Moscow , Russia
P1 — 48	About possibility of use of tunnel junctions as sensors of current states of mesoscopic superconducting structure. *I. Zhilyaev.* Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow Region , Russia
P1 — 49	Consistent microscopic theory for kinetic – inductance detectors. A.Semenov 1 , I. Devyatov 2 . 1. Moscow Pedagogical State University , Moscow , Russia . 2. Lomonosov Moscow State University, Skobelitsyn Institute of Nuclear Physics, Moscow , Russia
P1 — 50	Single Flux Quantum Pulse Amplifier. *V. K. Kornev 1 , I. I. Soloviev 1 , N. V. Klenov 1 , and O. A. Mukhanov 2 .* 1. Department of Physics, Moscow State University , Moscow , Russia . 2. HYPRES, Inc., Elmsford , NY , USA
Defects and Impurities in Semiconductors
P1 — 51	SIMS application for manganese clusters detection in silicon. *A. Trifonov, V. Saraykin.* Scientific Research Institute of Physical Problems named after F.V.Lukin, Moscow , Russia
P1 — 52	An application of gold diffusion for defect structure characterization in silicon. O.V. Feklisova, E.B. Yakimov. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
P1 — 53	The electric field stratification in silicon doped by transition metal. V.V. Privezentsev. Institute of Physics & Technology, Russian Academy of Science , Moscow , Russia
October 4th. 2007
Poster session II Entresol
Defects and Impurities in Semiconductors
P2 — 01	Low voltage ultra compact focused ion beam (FIB) column for resolution of 1.5?2 nm. Numerical simulation and prospects. *V.A. Zhukov 1 , A.I. Titov 2 .* 1. Institute for Informatics and Automation, Russian Academy of Sciences , St. Petersburg , Russia . 2. St. Petersburg State Technical University , St. Petersburg , Russia
P2 — 02	PRIVET – Simulator Single Event Upset Rate in Digital Memory Cells Induced by Heavy Ions of Space Environments. *G.I. Zebrev 1 , I. Ishutin 2 , V.S. Anashin 2* . 1. Department of Microelectronics, Moscow Engineering Physics Institute, Russia . 2. Space Device Engineering Institute (NIIKP), Federal Space Agency, Moscow , Russia
P2 — 03	Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs. O. Zhevnyak, V. Borzdov, A. Borzdov, D. Pozdnyakov, F.F. Komarov. Belarus State University , Minsk , Belarus
P2 — 04	Temperature effect on electron transport in conventional short channel MOSFETs: Monte Carlo simulation. O. Zhevnyak. Belarus State University , Minsk , Belarus
P2 — 05	The numerical modeling and the area optimization of the power DMOSFET. *E. Artamonova, A. Balashov, A. Kluchnikov, A. Krasukov, A. Shvetz.* Moscow Institute of Electronic Engineering, Moscow , Russia
P2 — 06	Analytical models of field effect transistors with thin channel. A. Khomyakov 1,2 and V. Vyurkov 2 . 1. Moscow State Institute of Radio Engineering, Electronics and Automatics ( Technical University ), Moscow , Russia . 2. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
P2 — 07	Modeling of Powerful GaAs MESFET. *A. Shestakov, A. Myasnikov, K. Zhuravlev.* Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia
P2 — 08	Modeling of Vertical Transistor with Electrically Variable Junctions in ISE TCAD. *D.G. Drozdov 2 , I.A. Horin 1 , A.E. Rogozhin 1 , A.G. Vasiliev 1,3 .* 1. Institute of Physics and Technology of RAS, Moscow , Russia . 2. Moscow State Institute of Radioengineering, Electronics and Automation (TU), Moscow , Russia . 3. Federal State Unitary Enterprise «SPE Pulsar», Moscow , Russia
P2 — 09	Nanoscale surface topography dynamics during ion beam sputtering. *A. Rudy, S. Kaschenko.* Yaroslavl State University , Yaroslavl , Russia
P2 — 10	A new model for the copper CMP kinetics. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 3 . 1. Institute for Problems in Mechanics, Russian Academy of Sciences , Russia . 2. Institute of Physics and Technology, Russian Academy of Sciences , Russia
P2 — 11	Calculation of fast electrons distribution function in diamond film. *A. Kozlitin, V. Zheleznov.* F.V.Lukin Scientific Research Institute of Physical Problems, Moscow , Russia
P2 — 12	Influence of a spin environment on ESR spectra of a two-spin system. V.V. Privezentsev. Institute of Physics &Technology, RAS, Moscow , Russia
Magnetic Micro- and Nanostructures
P2 — 13	System approach to experimental research of ferroelectric electrophysical properties. *Ye. A. Pecherskaya.* Penza State University , Penza , Russia
P2 — 14	Magnetic force microscopy investigations of multilayer submicron ferromagnetic particles. A.A. Fraerman, B.A. Gribkov , S.A. Gusev, A.Yu. Klimov, V.L. Mironov, V.V. Rogov, S.N. Vdovichev. Institute for Physics of Microstructures RAS, Nizhny Novgorod , Russia
P2 — 15	Epitaxial Fe films and nanostructures for magnetoelectronics. I.V. Malikov, L.A. Fomin, V.Yu. Vinnichenko, G.M. Mikhailov. Institute of Microelectronic Technology, Russian Academy of Sciences , Chernogolovka , Russia
P2 — 16	Magnetic anisotropy of thin films ion-beam synthesized in silicon at applied magnetic field. *G.G. Gumarov 1,2 , V.Yu. Petukhov 1,2 , N.G. Ivoilov 2 , E.N. Dulov 2 , V.A. Zhikharev 3 .* 1. Laboratory of Radiation Chemistry and Radiobiology, Kazan Physical-Technical Institute of RAS, Kazan , Russia . 2. Physics Faculty, Kazan State University , Kazan , Russia . 3. Kazan State Technology University , Kazan , Russia
P2 — 17	Ма gnetic structure and magnetoresistance of epitaxial iron microstructures: effects of shape and easy axis of magnetization. L.A. Fomin, I.V. Malikov, V.Yu. Vinnichenko, G.M. Mikhailov. Institute of Microelectronic Technology, Russian Academy of Sciences , Chernogolovka , Russia
P2 — 18	Structure and electromagnetic properties of FeNi films obtained with ion plasma deposition. Bochkarev V.F., Naumov V.V., Goryachev A.A. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 19	Structural and optical properties of Si/ b -FeSi 2 /Si heterostructures fabricated by Fe ion implantation and Si MBE. R.I. Batalov 1 , R.M. Bayazitov 1 , N.G. Galkin 2 , E.A. Chusovitin 2 , D.L. Goroshko 2 , T.S. Shamirzaev 3 , K.S. Zhuravlev 3 . 1. Kazan Physical-Technical Institute of RAS, Kazan , Russia . 2. Institute for Automation and Control Processes of FEB RAS, Vladivostok , Russia . 3. Institute of Semiconductor Physics of SB RAS, Novosibirsk , Russia
P2 — 20	Magnetostriction of an obliquely magnetized ferromagnetic film. L. Fetisov, S. Danilichev, S. Lebedev, G. Srinivasan. Moscow State Institute of Radio Engineering, Electronics and Automation, Moscow , Russia
P2 — 21	Investigation of re-switching properties of ferromagnetic contacts in Py/Mo microstructures. *Vinnichenko V.Yu., Chernykh A.V., Fomin L.A. , Mikhailov G.M..* Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences , Chernogolovka, Moscow Region , Russia
P2 — 22	Polarization switching in epitaxial multiferroic Nd:BiFeO 3 films. *M. Kouznetsov 1 , T. Ustyujanin 1 , V. Muhortov 2 .* 1. Moscow State Institute of Radioengineering Electronics and Automation, Moscow , Russia . 2. South Science Centre of RAS, Rostov-on-Don , Russia
Thin Films and Nanostructures Technologies II
P2 — 23	Creation of nanometer gaps between thin-film metal electrodes by the method of electromigration. A.N. Kuturov, A.S. Stepanov, E.S. Soldatov. Department of Physics, M.V. Lomonosov Moscow State University , Russia
P2 — 24	Formation of thin ZrO 2 layers for nanotransistor gate structures by electron beam evaporation. *D.G. Drozdov 2 , V.B. Kopylov 1 , I.A. Khorin 1,2 , A.A. Orlikovsky 1 , A.E. Rogozhin 1 , A.G. Vasiliev 1,3 .* 1. Institute of Physics and Technology of RAS, Moscow , Russia 2. Moscow State Institute of Radioengineering, Electronics and Automation ( Technical University ), Moscow , Russia . 3. Federal State Unitary Enterprise «SPE Pulsar», Moscow , Russia
P2 — 25	Formation of TiN/CoSi 2 bilayer from Co/Ti/Si structure in a non-isothermal reactor. V. Rudakov, V. Gusev. Institute of physics & technology RAS, Yaroslavl branch, Russia
P2 — 26	Features of evolution of implanted profiles during RTA in non-isothermal reactor. V. Rudakov, A. Victorov, Yu. Denisenko, B. Mochalov, V. Ovcharov. Institute of physics & technology RAS, Yaroslavl branch, Russia
P2 — 27	Deposition process kinetics and structure of SiGe films obtained by LPCVD. Nalivaiko 1 O.Y., Turtsevich 1 A.S., Plebanovich 1 V.I., Gaiduk 2 P.I. 1. RPC “Integral”, Minsk , Republic of Belarus . 2. Belorussian State University , Minsk , Republic of Belarus
P2 — 28	Buried layers of a silicate glasses and opportunities of their practical use. S. Krivelevich, M. Gryazev. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 29	Ion-Beam Synthesis of Buried Lead-Silicate Layers in Silicon. Buchin Ed.Yu. , Denisenko Yu.I., Simakin S.G. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 30	Pulsed laser deposition of layers and nanostructures based on cadmium telluride and bismuth. *A. Yeremyan, H. Avetisyan, K. Avjyan, G. Vardanyan, A. Khachatryan* . Institute of Radiophysics and Electronics of NAS of Armenia , Ashtarak , Armenia
Plasma Technologies and Diagnostics
P2 — 31	Effect of quartz window temperature on plasma composition during STI etch. E. Danilkin 1 ,2,3 , D. Shamiryan 1 , M.R. Baklanov 1 , W. Boullart 1 , G.Y. Krasnikov 2 , N.A. Shelepin 2 , O.P. Gutshin 2 , A.I. Mochalov 3 . 1. IMEC vzw, Heverlee, Belgium . 2. MIKRON, Moscow , Russia . 3. Moscow Institute of Electronic Technology, Moscow , Russia
P2 — 32	*Recombination kinetics of Cl atoms in Cl 2 /X (X = Ar, N 2 , O 2 , H 2 ) plasmas.* D. Sitanov, A. Efremov, V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo , Russia .
P2 — 33	An End Point Detection Method on the Base of Induced Current and an Automatic Control Device for an Ion Etching System. S.B. Simakin 1 , G.D. Kuznetsov 2 , E.A. Mitrofanov 1 . 1. The State Federal Unitary Firm “ S.A. Vekshinsky Scientific Research Institute of Vacuum Technique”;2. Moscow State Institute of Steel and Alloys ( Technical University ), Moscow , Russia
P2 — 34	Pilot Etcher and Bosh Process for Deep Anisotropic MEMS & NEMS Etching. S.N. Averkin 1 , I.I. Amirov 2 , K.V. Rudenko 1 , I.A. Tyurin 1 , A.A. Rylov 1 , Yu.P. Baryshev 1 , V.F. Lukichev 1 , and A.A. Orlikovsky 1 . 1. Institute of Physics and Technology RAS, Moscow , Russia . 2. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl , Russia
P2 — 35	In situ Bosch Si trenches etching depth control with laser interferometer. O.V. Morozov, A.V. Postnikov, A.N. Kuprijanov. Institute Physics and Technology, Russian Academy of Sciences RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 36	Formation of IV-VI semiconductor nanohillocks using Ar inductively coupled plasma. S.P. Zimin 1 , E.S. Gorlachev 1 , I.I. Amirov 2 . 1. Yaroslavl State University , Yaroslavl , Russia . 2. Institute Physics and Technology, Russian Academy of Sciences RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 37	Measurement of atomic hydrogen flow density during GaAs surface cleaning. V.A. Kagadei, E.V. Nefyodtev, D.I. Proskurovski, and S.V. Romanenko. High Current Electronics Institute, Siberian Branch, Russian Academy of Science , Tomsk , Russia
P2 — 38	Ionized metal PVD with a hollow cathode magnetron. N. Poluektov, V. Kharchenko, I. Kamyschov, Yu. Tsar’gorodsev. Moscow State Forestry University , Mytischi, Moscow Region , Russia
P2 — 39	Low Pressure Radio-Frequency Plasmas in the Nanolayers Formation Processes on the Surface of Construction Materials. I.Sh. Abdullin 1 , V.S. Zheltukhin 2 , I.R. Sagbiev 1 , R.F. Sharafeev 1 . 1. Kazan State Technological University, Kazan , Russia . 2. Kazan State University , Kazan , Russia
Micro- and Nanostructure Characterization
P2 — 40	Dynamical diffraction of femtosecond X-ray pulses by deformed crystals. *T. Chen.* Moscow State Academy of Fine Chemical Technology, Moscow , Russia
P2 — 41	The investigation and development of the test structures for scanning probe microscopy. *A. Belov, S. Gavrilov, A. Tihomirov, Yu. Chaplygin and V. Shevyakov.* Moscow Institute of Electronic Technology ( Technical University ) , Moscow , Russia
P2 — 42	Conception of “virtual microscope” and its application in nanometrology. А . Zablotskiy 1 , А . Baturin 1 , V. Bormashov 1 , R. Kadushnikov 2 , N. Shturkin 2 . 1 Moscow Institute of Physics and Technology ( State University ), Moscow , Russia . 2 Company “ SIAMS ”, Ekaterinburg , Russia
P2 — 43	Possibilities of research of porous systems and nanomaterials by method of positron annihilation spectroscopy. *1 Grafutin V.I., 1 Funtikov Yu.V., 2 Kalugin V.V., 2 Nevolin V.K., 1,2 Svetlov-Prokop’ev E.P., 2 Timoshenkov S.P., 1 Zaluzhnyi A.G.* 1 .«State Science Centre of the Russian Federation — A.I.Alikhanov Institute for theoretical and experimental physics» , Moscow , Russia . 2. Moscow Institute of Electronic Technology ( Technical University ), Zelenograd, Moscow , Russia
P2 — 44	Fourier transform spectroscopy of pulse signals for the performance investigations of logical elements produced on quantum-well structures. E.V. Glazyrin, I.P. Kazakov, A.L. Karuzskiy, O.A. Klimenco , Yu.A. Mityagin, V.N. Murzin, A.V. Perestronin, A.M. Tskhovrebov. P.N. Lebedev’s Physical Institute, Russian Academy of Sciences , Moscow , Russia
P2 — 45	Capabilities of microinterferometer with digital recording of images for study micro objects with sub nanometer resolution. *N. Chkhalo, D. Raskin, N. Salashchenko.* Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P2 — 46	Application of high resolution computerized white light interferometry for characterization of MEMS structures. *G. Malovichko, V. Kal’nov, K. Rudenko.* Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
P2 — 47	New approach in the determination of the dependency of surface charge density on semiconductor surface potential based on voltage–capacity analysis of the depletion region of MIS-structures. **G.V. Chucheva , A.G. Zhdan.*** Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia
P2 — 48	Experimental determination of the potential profile in the insulating layers on the basis of current-voltage characteristics of tunneling MOS diodes. E. Goldman, A. Zhdan, N. Kukharskaya. The Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow Region , Russia
P2 — 49	Investigation of CMOS transistor layers produced using salicide technology by SIMS and AES methods. *E. Kirilenko 1 , E. Kouznetsov 2 , A. Kozlitin 1 , E. Rybachek 2 , A.Trifonov 1 .* 1. F.V.Lukin Scientific Research Institute of Physical Problems, Moscow , Russia ; 2. Moscow Institute of Electronic Technology, Research manufacturing complex « Technological Center»
P2 — 50	Deposition process and analysis of SiON thin films obtained by RF magnetron sputtering of silica in the nitrogen ambient. M. Yudichev, S. Shevchuk, Y. Maishev. Insitute of Physics & Technology of RAS (FTIAN), Moscow , Russia
P2 — 51	Synthesis and characterization of Fe 3 Si/MgO structures for spintronics. A. Goikhman 1 , N. Barantsev 1 , Y. Lebedinskii 1 , A. Zenkevich 1 , V. Nevolin 1 , R. Mantovan 2 , M. Georgieva 2 and M. Fanciulli 2 . 1 Moscow Engineering Physics Institute , Moscow , Russia. 2 Laboratorio Nazionale MDM CNR-INFM, Agrate Brianza (MI), Italy
P2 — 52	Formation of nanosize structures based on iron and cobalt in porous silicon. V.M. Kashkarov, A.S. Lenshin, A.E. Popov, B.L. Agapov. Voronezh State University , Universitetskaya pl. 1, 394006 Voronezh , Russia
P2 — 53	Features of porous anodic titania formation. *A.Belov, A.Dronov and M.Nazarkin.* Moscow Institute of Electronic Technology ( Technical University ), Russia
P2 — 54	Diagnostics of magnetic micro- and nanoparticles in optical tweezers. *A. Zhdanov, I. Soboleva, A. Fedyanin.* Faculty of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia
Delayed Posters
D1 — 01	Effect of gamma-irradiation on reliability and operation characteristics of AlGaN/GaN HEMTs. *A.E. Belyaev 1 , R.V. Konakova 1 , S.A. Vitusevich 2 , B.A. Danilchenko 3 , N.S. Boltovets 4 , Yu.N. Sveshnikov 5 , Z. Bougrioua 6 .* 1. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine , Kiev , Ukraine . 2. Institut fur Bio- und Nanosysteme and CNI – Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, Julich , Germany . 3. I nstitute of Physics , National Academy of Sciences of Ukraine , Kiev , Ukraine . 4. State Enterprise Research Institute “Orion”, Kiev , Ukraine . 5. Close Corporation “Elma-Malakhit”, Zelenograd , Russia . 6. Centre de Recherche sur l’Heteroepitaxie et ses Applications, CNRS, Valbonne, France

Информация о IC MNE 2005 и QI 2005

By: admin-icmne

On: 23.03.2023

In: История, Конференции

Фотографии с IC MNE 2005 и QI 2005

Стендовые доклады

Общая информация

Международная конференция «Микро- и наноэлектроника – 2005» (ICMNE-2005), включающая симпозиум «Квантовая информатика», проводилась 3-7 октября 2005 в отеле «Липки», Звенигород, Московская область, Россия.

ICMNE-2005 AND SYMPOSIUM QI-2005 SCIENTIFIC PROGRAM

(Final Edition)
(Oral Presentations)

Download files:
ICMNE-2005 Oral Presentations
ICMNE-2005 Posters
QI-2005 Oral Presentations

Monday, October 3th , 2005
9.00 — …	Registration & Accommodation
13.00 — 14.00	Lunch
Conference hall Special Session
15.30	S-01	FEI Company Instruments and Technologies for Analysis and Modification of Micro- and Nanoelectronic Devices. V. Ya. Shklover. Systems for Microscopy and Analysis, Ltd. Moscow , Russia
16.00	S-02	CARL ZEISS Equipment for micro- & nano- electronics and E-beam Lithography. Alexander Uliyanenkov. Department of CARL ZEISS on SMT in Russia , NIS , and Eastern Europe.
16.30	S-03	New Developments in NT-MDT Microscope Line. V.A. Bykov. NT-MDT Co., Moscow , Zelenograd , Russia.
17.00	S-04	Development of Components for New Generation of Radio-Electronic Modules and Subsystems. *A.G. Vasiliev.* Federal State Unitary Enterprise SPE «Pulsar».
17.30	S-05	Application of Base Gate Arrays at Development of Equipment. *A.N. Saurov, A.N. Denisov, V.V. Konyachin.* State Manufacturing Complex “Technological Centre” MIET, Moscow , Russia.
18.00	Welcome Party
19.00	Dinner
Tuesday, October 4th , 2005
Conference hall
8.00	Breakfast
8.40	Welcome remarks E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow K.A. Valiev, Program Chair, IPT RAS, Moscow
Plenary Session
8.50	L1-1	INVITED: Materials Inflation for Nano Devices. H. Ryssel. Fraunhofer Institute of Integrated Systems and Device Technology (IISB), Erlangen , Germany
9.30	L1-2	INVITED: Advanced silicon-based micro- and nanoelectronics: physics and technology. A.L.Aseev and I.G.Neizvestny. Institute of Semiconductor Physics SD RAS, Novosibirsk , Russia
10.10	L1-2D	Ultra Shallow Junction formation by Plasma Doping Technologies. Hiroyuki Ito. UJT Lab. Inc. , Osaka, Japan.
10.40	L1-3	INVITED:Quantum description of nanotransistors. Vladimir F. Lukichev. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
11.10	L1-4	INVITED:Microelectronics Below 10 nm: Prospects and Problems. Konstantin K. Likharev. Stony Brook University, Stony Brook , NY 11794-3800 , U.S.A
11.40 — 12.00	Coffee break. Winter garden
Conference Hall Session 1. Sub-100 nm Lithography
12.00	O1-01	Research activity in the field of projection EUV-Lithography within the framework of the Russian program. *S.V. Gaponov, E.B. Kluenkov, A.Ya. Lopatin, V.I. Luchin, N.N. Salashchenko, N.I. Chkhalo.* Institute for Physics of Microstructures RAS, 603600, GSP-105, Nizhny Novgorod , Russia
12.30	O1-02	Concept of EUV-lithography tool for scientific application. *R. P. Seisyan, N. A. Kaliteevskaya, S. G. Kalmykov.* A. F. Ioffe Physico-Technical Institute of the Russian Academy of Science, St. Petersburg , Russia
12.50	O1-03	Inorganic thin films as potential photoresist in VUV and EUV ranges . *N.A.* *Kaliteevskaya, S.I. Nesterov, R.P. Seisyan.* A.F. Ioffe Physico-Technical Institute of the Russian Academy of Science, St. Petersburg , Russia
13.10	O1-04	Sources of radiations on the basis of capillary discharges. V.A. Burtsev, E.P. Bolshakov, Н . В . Kalinin, V.A. Kubasov, R.F. Kurunov, V.G. Smirnov, V.I. Chernobrovin. Efremov Scientific Research Institute of Electrophysical Apparatus , St. Petersburg
13.30 — 14.30	Lunch
Conference Hall Session 2. Nanodevices and Nanostructures I
14.30	L1-5	INVITED:SOI nanotransistors: ultimate dimensions and fundamental limits. V. Popov. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia.
15.00	O1-05	Poly-Si and FUSI gate electrodes on HfO 2 high-k gate dielectrics: in-situ characterization of growth, thermal stability and electronic structure A. Zenkevich 1 , Yu.Yu. Lebedinskii 1 , E.P. Gusev 2 , M. Gribelyuk 3 and V.N. Nevolin 1 1. Moscow Engineering Physics Institute, Russia ,2. IBM Semiconductor Research and Development Center , New York , USA , 3. IBM Systems and Technology Division (Microelectronics Group), Hopewell Junction , NY 12533 , USA
15.30	O1-06	Quantum simulation of a silicon field-effect transistor. V. Vyurkov, A. Sidorov, and A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
15.50	O1-07	Spin relaxation of holes in Ge quantum dots. *A. F. Zinovieva, A. V. Nenashev, A. V. Dvurechenskii.* Institute of Semiconductor Physics, RAS, Novosibirsk , Russia
16.10	O1-08	Heterostructures with the modulated conductivity. *V. Gergel 1 , V. Kurbatov 2 , M. Rzaev 2 , A. Pogosov 2 , N. Sibeldin 2 , T. Burbaev 2 , M. Yakupov 1 .* 1. Institute for Radio-Engineering and Electronics, Russian Academy of Science , Moscow , Russia , 2. P.N. Lebedev Physical Institute, Russian Academy of Science , Moscow , Russia
Room A. Session 3. MEMS & Sensors
14.30	O1-09	High-Speed bistable MEMS commutators. E.G. Kostsov, A.A. Kolesnikov. Institute of Automation and Electrometry, Russian Academy of Sciences , Novosibirsk, Russia
14.50	O1-10	Probe metrology of MEMS-structures. *N. Balan 1 , S. Gavrin 2 , A. Gruzdev 2 , S. Morozov 2* 1. Angstrem Center Nanotech, Moscow , Russia 2. Moscow Engineering Physics Institute ( State University ) , Moscow , Russia
15.10	O1-11	Analysis of Microelectromechanical Gyroscope Technological Faults. *B. Konoplev, I. Lysenko.* Taganrog State University of Radio-Engineering, Taganrog, Russia
15.30	O1-12	Formation of released MEMS structures using the process of deep plasma Si etching. O.V. Morozov, I.I. Amirov. Institute of Microelectronics and Informatics RAS, Yaroslavl , Russia
15.50	O1-13	The development of simulation approach for the modeling of the piezoresistive effect in microsystems engineering elements. T. Kroupkina , O. *Pankratov , A. Pogalov.* Moscow Institute of Electronic Engineering, Moscow , Russia
16.10	O1-13D	Mems Development in Russia . *Petr P. Maltsev.* Chief Editor of “ NANO – and MYCROSYSTEMS TECHNIQUES” Magazine, Moscow , Russia.
Room B. Session 4. Photonics and Optoelectronics
14.30	O1-14	From diffraction grating to photonic crystal: opaque bands formation. **M. Barabanenkov , Yu. Barabanenkov, S. Nikitov.*** * Institute of Microelectronics Technology and superpure materials, RAS, Chernogolovka, Russia, Institute of Radioengineering and Electronics, RAS, Moscow, Russia
14.50	O1-15	Formation of two-dimensional photonic crystals by deep anodic etching. *E. Yu. Gavrilin, V. V . Starkov, A. F. Vyatkin, and M. A. Knyazev.* Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia
15.10	O1-16	Formation of near-field optical vortexes at nanostructured metallic films *A. A. Ezhov, S. A. Magnitskii, N. S. Maslova, D. A. Muzychenko, A. A. Nikulin, V.I. Panov.* Faculty of Physics of M.V. Lomonosov Moscow State University , Moscow , Russia
15.30	O1-17	Microstructured Optical Fibers – New Tool For Telecommunications. **M. Ryabko , Yu. Chamorovskii, I. Lissenkov, S. Nikitov*** Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009 Moscow , Russia
15.50	O1-18	Optical properties of empty and filled hollow pin structures. *M. Barabanenkov, V. Starkov.* Institute of Microelectronics Technology and high-pure materials, Russian Academy of Sciences , Chernogolovka , Russia
16.10	O1-19	*The growth features of epitaxial Pb 1-X Mn X Se films and photosensitive p-n* junctions on their basis. I.R. Nuriyev, A.M. Nazarov, R.M. Sadygov, M.B. Gadzhiev** Institute of Physics of the National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
16.30 — 17.00	Coffee break. Winter garden
Conference Hall Session 5. Devices and ICs
17.00	O1-20	X-band SPDT Switch MMIC based on directional coupler key. *V.G. Mokerov, D.L. Gnatyuk, A.P. Lisitskii.* Institute of UHF Semiconductor Electronics, Russian Academy of Sciences , Moscow , Russia
17.20	O1-21	Integrated logic elements based on tunneling connected quantum wells. *B. Konoplev 1,2 , E. Ryndin 2 .* 1. Taganrog State University of Radio Engineering, Taganrog , Russia . 2. Laboratory of Nanoelectronics, South Scientific Center of Russian Academy of Science , Taganrog , Russia
17.40	O1-22	The elementary adiabatic logic gates for digital information processing systems. *V. Staroselsky 1 , V. Losev 1* 1. Moscow State Institute of Electrinic Engenering, Moscow , Russia
18.00	O1-23	Si-electrode of a fuel cells in the integral design V. Starkov, S. Shapoval. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
18.20	O1-24	An automatic synthesis method of compact models of integrated circuit devices based on equivalent circuits. *I.I. Abramov.* Belarusian State University of Informatics and Radioelectronics, Minsk , Belarus
18.40	O1-24D	Non-volatile electrically reprogrammable memory on self-forming conducting nanostructures. *V. Mordvintsev, S. Kudryavtsev , V. Levin.* Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia.
Room A. Session 6. Thin Films
17.00	O1-25	Morphology and structure of PZT films. M. V. Silibin, V. M. Roshin, V. B. Yakovlev, M. S. Lovygina. Moscow Institute of Electronic Technologies ( Technical University ), 124498 Moscow , Zelenograd , Russia
17.20	O1-26	Degradation kinetics of ALD grown HfO 2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS. Yu.Yu. Lebedinskii 1 , A. Zenkevich 1, N. Barantsev 1 , G. Scarel 2 , M. Fanciulli 2 and V.N. Nevolin 1 . 1. Moscow Engineering Physics Institute, Russia . 2. N ational Laboratory”Materials and Devices for Microelectronics”, INFM/CNR, Italy
17.40	O1-27	The analogy of models of solid-phase epitaxial growth and atomic rearrangement at misfit strain relaxation i n epitaxial heterostructures. *Vyatkin A. F.* Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
18.00	O1-28	Formation of Conductive Structures in Insulate Layers by Selective Removal of Atoms technique. *B. Gurovich 1 , A. Domantovsky 1 , E. Kuleshova 1 , E. Ol’shansky 1 , K. Prikhodko 1 , Y. Lunin 2 .* 1. Russian Research Center “Kurchatov Institute”, Moscow, Russia 2. Institute for System Studies, Russian Academy of Sciences, Moscow, Russia
18.20	O1-29	Effects of negative differential resistance in TlIn 1-x Gd x Se 2 films. E.M. Gojaev, A.M. Nazarov, K.Dj. Gulmammadov, S.S. Osmanova.* Azerbaijan Technical University , Baku , Azerbaijan . * Institute of Physics of the National Academy of Sciences of Azerbaijan , Baku , Azerbaijan
Room B. Session 7. Superconducting Structures
17.00	L1-6	INVITED:Josephson junctions with ferromagnetic materials. M. Yu. Kupriyanov 1 , A.A. Golubov 2 . Institute of Nuclear Physics , Moscow State University , Moscow , Russia . 2. Faculty of Science and Technology, University of Twente , The Netherlands
17.30	O1-30	Nonequlibrium properties of SIS’IS structure under microwave irradiation. A.V. Semenov 1 , I.A. Devyatov 2 , M.Yu. Kupriyanov 2 . 1. Department of Physics, Moscow State Pedagogical University, Moscow , Russia . 2. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University , Moscow , Russia
17.50	O1-31	Out-of substrate plane orientation control of thin YBa 2 Cu 3 O x films on NdGaO 3 tilted-axes substrates. Peter B. Mozhaev 1 , Julia E. Mozhaeva 1 , Jorn B. Hansen 2 , Claus S. Jacobsen 2 , Igor K. Bdikin 3 , Iosif M. Kotelyanskii 4 , Valery A. Lusanov 4 , Andrey L. Kholkin 3 . 1. Institute of Physics and Technology RAS, Moscow , Russia 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark .3. CICECO, University of Aveiro , Aveiro , Portugal 4. Institute of Radio Engineering and Electronics RAS, Moscow , Russia
18.10	O1-32	Calibration of quantum detector of noise based on a system of asymmetric superconducting loops. V.L. Gurtovoi, S.V. Dubonos, A.V. Nikulov, N.N. Osipov and V.A. Tulin. Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia
18.30	O1-32D	Nonuniform magnetic field of ferromagnetic nanoparticle as source for control transport properties of superconductor structures. A.A. Fraerman1, B.A. Gribkov1, S.A. Gusev1, E. Il’ichev2, A.Yu. Klimov1, Yu.N. Nozdrin1, G.L. Pakhomov1, V.V. Rogov1, R. Stolz2, D. Y. Vodolazov1 and S.N. Vdovichev1 1. Institute for Physics of Microstructures RAS, GSP 105, 603950 Nizhny Novgorod, Russia, 2. Institute for Physical High Technology, Jena, Germany.
19.00	Dinner
Wednesday, October 5th 2005
8.15	Breakfast
Conference Hall SYMPOSIUM QI-2005
9.00	Q-01	K.A.Valiev (FTIAN) Introductory remarks. Review of quantum informatics: results and perspectives
9.30	Q-02	V.Akulin (Univ. Orsay, invited) Entanglement distribution along 2-dimensional lattice of qubits
10.00	Q-03	A.S.Holevo (MIAN, invited), Photon localisation: observed location and uncertainty relations
10.30	Coffee break
Conference Hall Session 8. Nanodevices and Nanostructures II
10.50	O2-01	Electronic transport through silicon nanocrystals embedded in SiO 2 matrix. *M.D. Efremov, S.A. Arzhannikova, G.N. Kamaev, G.A. Kachurin, A.V. Kretinin, V.V. Malutina?Bronskaya, D.V. Marin, V.A. Volodin, S.G. Yanovskaya.* Institute of Semiconductor Physics, RAS , Novosibirsk , Russia
11.10	O2-02	Calculation of the secondary charge carriers current in submicron channel MOSFETs at stress regimes of operation. *V.M. Borzdov, F.F. Komarov, O.G. Zhevnyak, V.O. Galenchik, D.V. Pozdnyakov, A.V. Borzdov.* Belarus State University , Minsk , Belarus
11.30	O2-03	Novell flash devices based on high-k dielectrics. V.A. Gritsenko, K. A. Nasyrov. Institute of Semiconductor Physics, Novosibirsk
11.50	O2-04	Formation of silicon-on-insulator structures with low surface roughness. F. Komarov, O. Milchanin, E. Boiko . Institute of Applied Physics Problems, Belarusian State University , Minsk , Belarus
12.10	O2-05	Hopping conductivity as a predominant mechanism of current transport in thermally oxidized nanoporous silicon. L.V. Grigoryev 1 , I.M. Grigoriev 1 , V. Zamoryanskaya 2 , A.E. Kalmykov 2 , V.I. Sokolov 2 , L.M. Sorokin 2 . 1. V.A.Fock Institute of Physics, Saint-Petersburg State University , Russia 2. A.F.Ioffe Physico-Technical Institute, Saint-Petersburg , Russia
12.30	O2-06	Transport phenomena in interference transistor. *A.A. Gorbatsevich 1 , V.V. Kapaev 2 .* 1. Moscow Institute of Electronic Technology ( Technical University ), Moscow , Russia 2. P.N. Lebedev Physical Institute, Moscow , Russia.
Room A. SYMPOSIUM QI-2005
11.00	Q-04	L.E.Fedichkin (Clarkson University, invited), Decoherence models for spin ensembles
11.30	Q-05	S.Ya.Kilin (Inst.Physics, Minsk, invited), To be determined
12.00	Q-06	A.Khrennikov (Univ.Vaxio, Sweden, invited), Quantum mechanics as projection of classical statistical mechanics
12.30	Q-07	M.Mensky (FIAN), Quantum-computer toy model of consciousness according to the extended Everett conception
Room B. Session 9. Magnetic Micro- and Nanostructures
11.00	O2-07	Sd-exchange switching in magnetic junctions having non-pinned current carrier spins . *E.M. Epshtein, Yu.V.* *Gulyaev, P.E. Zilberman.* Institute of Radio Engineering and Electronics of RAS, Fryazino , Russia
11.20	O2-08	Moessbauer spectra of nanomagnets within rotating hyperfine field. N. P. Aksenova *, M. A. Chuev.* Institute of Physics and Technology , RAS, Moscow , Russia
11.40	O2-09	Magnetoresistance Of Coupled Quantum Wells In Quantizing Magnetic Field. *V.E. Kaminskii 1 , G.B. Galiev 1 , V.G. Mokerov 1 , I.S. Vasil’evskii 2 , R.A. Lunin 2 , V.A. Kul’bachinskii 2 .* 1 Institute of UHF Semiconductor Electronics, Russian Academy of Sciences , Moscow . 2 Moscow State University, Department of Low Temperature Physics, Moscow , Russia
12.00	O2-10	Two-Dimensional Magnonic Crystals Based on Ferromagnetic Films. Yu.A. Filimonov 1 , Yu.V. Gulyaev , S.A. Nikitov , S.V. Vysotskii 1 .* Institute of Radioengineering and Electronics, Russian Academy of Sciences, Moscow, Russia 1 Institute of Radioengineering and Electronics, Russian Academy of Sciences, Saratov Branch, Russia
12.20	O2-11	Exchange interactions in a ferrimagnetic ring. *V. Kostyuchenko 1 , M. Kostyuchenko 2 .* Institute of Microelectronics and Infirmatics, Russian Academy of Sciences , Yaroslavl , Russia . 2. Yaroslavl State Technical University , Yaroslavl , Russia
12.40	O2-11D	MFM tip induced remagnetization effects in ferromagnetic sub-micron sized particles. B.A.Gribkov, S.A.Gusev, A.A.Fraerman, I.R.Karetnikova, V.L.Mironov, I.M.Nefedov, N.I.Polushkin, I.A.Shereshevsky, S.N.Vdovichev. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
13.00	Lunch
Conference Hall Session 10. Plasma Technologies
14.00	O2-12	Precision Plasma Technologies: Equipment and Processes. A.A. Orlikovsky, K.V. Rudenko, S.N. Averkin. Institute of Physics & Technology RAS, (FTIAN), Moscow , Russia
14.20	O2-13	A self-consistent model for the HCl dc glow discharge: plasma parameters and active particles kinetics. *A. Efremov, V. Svettsov.* Ivanovo State University of Chemistry & Technology, Ivanovo , Russia
14.40	O2-14	Ultra shallow p + -n junctions in Si produced by plasma immersion ion implantation. К . Rudenko 1 , S. Averkin 1 , V. Lukichev 1 , A. Orlikovsky 1 , A. Pustovit 2 , A. Vyatkin 2 . 1. Institute of Physics & Technology, RAS, Moscow , Russia . 2. Institute of Microelectronics Technology and High-Purity Materials, RAS, Chernogolovka , Russia
15.00	O2-15	Plasma enhanced chemical vapor deposition of multifunctional nanocrystalline films of silicon carbornitride. Nadezhda I. Fainer, Yuri M. Rumyantsev, Marina L. Kosinova, Evgeni A. Maximovski, Fedor A. Kuznetsov.* Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk , Russia
15.20	O2-16	Ionized PVD with an electron cyclotron resonance plasma source. N. Poluektov, V. Kharchenko, I. Kamyschov, Yu. Tsar’gorodsev. Moscow State Forestry University , Mytischi, Moscow Region , Russia
15.40	O2-17	Simulation of the feature profile evolution in during deep plasma etching of Si by the cell-string hybrid method. *A.S. Shumulov, I.I. Amirov.* Institute of Microelectronics and Informatics RAS, Yaroslavl , Russia
Room A. SYMPOSIUM QI-2005
14.00	Q-08	Pavel Kurakin , George Malinetskii , Howard Bloom ( Keldysh Institute of Applied Mathematics , New York University ), Dialogue model of quantum dynamics
14.20	Q-09	F.Ablayev, A.Gainutdinova (Kazan State Univ., Russia), On complexity properties of quantum uniform and nonuniform automata
14.40	Q-10	A.Y.Okulov (FIAN), Quantum billiards with nonlinear boundaries
15.00	Q-11	Yu.I.Bogdanov, R.F.Galeev, S.P.Kulik, G.A.Maslennikov, and E.V.Moreva (MSU), Statistical Reconstruction of Biphoton Polarization States.
15.20	Q-12	S.N.Molotkov, A.V.Timofeev, A.P.Makkaveyev, D.I.Pomozov (IFFT, FTIAN), New algorithms for the key purification in quantum cryptography
15.40	Q-13	Y.I.Ozhigov, I.N.Semenihin, A.S.Burkov, A.V.Damir (MSU, FTIAN)
Room B. Session 11. Simulation and Modeling I
14.00	O2-18	INVITED: Actual Problems of Modeling in Micro- and Nanoelectronics. *R.V. Goldstein, V.V. Ivin, V.P. Kudrya, T.M. Makhviladze, A.Kh. Minushev, K.P. Novoselov , M.E. Sarychev.* Institute of Physics and Technology, Russian Academy of Sciences; JSC SOFT-TEC, Moscow , Russia
14.20	O2-19	Complex simulation of electron process of deep submicron MOSFET based on energy balance equation. *V.A. Gergel 1 , M.N. Yakupov 2* . 1. The Institute for Radio-Engineering and Electronics, RAS, Moscow . 2. JSC Mikron, Zelenograd , Russia
14.40	O2-20	Nonequilibrium Diagrammatic Technique for Nanoscale Devices. *G. I. Zebrev.* Department of Microelectronics, Moscow Engineering Physics Institute, Russia
15.00	O2-21	Monte Carlo simulation of device structures with one-dimensional electron gas. *V.M. Borzdov, F.F. Komarov, V.O. Galenchik, D.V. Pozdnyakov, A.V. Borzdov, O.G. Zhevnyak.* Belarus State University , Minsk , Belarus
15.20	O2-22	Process and device simulation: problems of effective use for microelectronics and microsystems engineering products design. Y. Chaplygin, M. Korolev, T. Kroupkina. Moscow Institute of Electronic Engineering, Moscow , Russia
15.40	O2-23	Modeling of spin polarization in InAs/GaSb quantum wells under a longitudinal current. A. Zakharova 1 , I. Lapushkin 1 , S.T. Yen 2 , K. Nilsson 3 , K.A. Chao 3 . 1. Institute of Physics and Technology of RAS, Russia ; 2. Department of Electronics Engineering, National Chiao Tung University , Taiwan ; 3. FTT, Department of Physics, Lund University , Sweden
16.10	Coffee break
16.30 Entresol. POSTER SESSION I
Bottom hall. Exhibition
19.00	Dinner
Thursday, October6 th 2005
8.15	Breakfast
Conference Hall Session 12. Nanostructures Technologies I
9.00	L3-7	INVITED: NANOFAB: The base, multipurpose, research and technological complex . *V.A. Bykov , D.V. Veryovkin* , NT-MDT Co, State Research Institute of Physical Problems, 124460, Moscow, Russia
9.30	O3-01	Silicon Nanoclusters in SiN x Matrix: Formation by LF PECVD and Properties. A.E. Berdnikov 1 , A.A. Popov 1 , V.D. Chernomordick 1 , M.D. Efremov 2 , V.A. Volodin 2 , D.V. Marin 2 , N.V. Vishnyakov 3 , I.G. Utochkin 3 . 1. Institute of Microelectronics and Informatics Russian Academy of Sciences, Yaroslavl , Russia . 2. Institute of Semiconductors Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk , Russia . 3 Ryazan state radiotechnical academy, Ryazan , Russia
9.50	O3-02	Formation of ordered arrays of Ag nanowires and nanodots on Si(557) surface. *R. Zhachuk, S. Teys, A. Dolbak, B. Olshanetsky.* Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia
10.10	O3-03	Synthesis of nanowires by pulsed current electrodeposition. A. N. Belov, S. A. Gavrilov. Moscow Institute of Electronic Technologies ( Technical University ), 124498 Moscow , Zelenograd , Russia
10.30	O3-04	The relationship between magnetoresistance and magnetomechanical effects in electrodeposited nickel nanocontacts. A. Bukharaev, P. Borodin, D. Biziaev, R. Gatiiatov. Zavoisky Physical Technical Institute of Russian Academy of Sciences, Kazan , Russia
Room A. SYMPOSIUM QI-2005
9.00	Q-14	V.V.Aristov, A.V.Nikulov (Inst., microelectronics techn.) Could EPR correlation be in superconducting structures
9.20	Q-15	I.I.Ryabtsev, D.B.Tretyakov, I.I.Beterov, V.M.Entin (Institute of Semiconductor Physics ), Application of Rydberg atoms to quantum computing
9.40	Q-16	G.Yu. Kryuchkyan and H.H. Adamyan (Yerevan State Univ.), Non-stationary entanglement and squeezing beyond the standard limits
10.00	Q-17	A. Kalachev, V. Samartsev (Kazan Physical-Technical Institute) Quantum storage and quantum calculations using subradiant states of atomic ensembles
10.20	Q-18	Yu.I. Bogdanov (FTIAN), Quantum tomography of arbitrary spin states of particles: root approach
10.40	Q-19	A.A.Kokin (FTIAN), The antiferromagmet-based nuclear spin quantum register in inhomogeneous magnetic field
Room B. Room B. Session 13. Simulation and Modeling II
9.00	O3-05	Modeling of diffusion of As i mplanted in Si at low energies and high fluences. F.F. Komarov 1 , O.I. Velichko 2 , A.M. Mironov 1 , V.A. Tsurko 3 , G.M. Zayats 3 . 1. Institute of Applied Physics Problems, Belarusian State University , Minsk , Belarus , 2. Belarusian State University on Informatics and Radioelectronics, Minsk , Belarus 3. Institute of Mathematics , Academy of Sciences of Belarus , Minsk , Belarus
9.20	O3-06	Atomic mechanisms of cluster diffusion on metal surface. *O.S. Trushin 1 , P. Vikulov 1 , V.V. Naumov 1 , A. Karim 2 , A. Kara 2 and T. Rahman 2 .* 1. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia , 2. Kansas State University , Manhattan , KS , USA
9.40	O3-07	Possibility of non-equilibrium phase transitions in the atmosphere of own silicon defects . *E.P. Svetlov-Prokop’ev 1 , S.P. Timoshenkov 2 , V.V. Dyagilev 2 , V.V. Kalugin 2 .* 1. State Scientific Center RF Institute for Theoretical and Experimental Physics, Moscow , Russia 2. Moscow Institute of Electronics Technology ( Technical University ), Moscow , Russia
10.00	O3-08	Melting behavior of metals in matrix of porous anodic alumina. A. N. Belov 1 , S. A. Gavrilov 1 , D. A. Kravchenko 1 , D. G. Gromov 1 , A. S. Malkova 1 , A. A. Tikhomirov 2 . 1. Moscow Institute of Electronic Technologies ( Technical University ), Zelenograd , Russia , 2. NT-MDT Corporation,, Zelenograd , Russia
10.20	O3-09	On the Surface Pressure and the Fragmentation of a Nanocrystal. M.N. Magomedov. Institute for Geothermal Research of Daghestan S cientific Centre RAS , Makhachkala , Russia
11.00	Coffee break
Conference Hall Session 14. Nanostructures Technologies II
11.30	O3-10	Prospects of Semiconductor Vacuum Technologies in Space. *V.V. Blinov 1 , A.I. Nikiforov, O.P. Pchelyakov 1 , L.V. Sokolov 1 , A.I. Ivanov 2 , I.V. Tchurilo 2 , V.V. Teslenko 2 , L.L. Zvorykin 2 .* 1. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 2. Rocket Space Corporation «Energiya», Korolev , Russia
11.50	O3-11	Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on SiO 2 films. *A.V. Dvurechenskii 1 , P.L. Novikov 1 , Y. Khang 2 , Zh.V. Smagina 1 , V.A. Armbrister 1 , A.K. Gutakovskii 1 .* 1. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia , 2. Samsung Electronics Co, Samsung Advanced Institute of Technology , Yongin-Si , Korea
12.10	O3-12	Diffusion and phase formation in ternary silicate systems framed by an ion bombardment . S. Krivelevich, E. Buchin, Yu. Denisenko, R. Selukov. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia
12.30	O3-13	Forming Matrix Nanostructures in Silicon . *A.V. Barkhudarov 1 , S.A. Gavrilov 1 , A.A. Golishnikov 2 , M.G. Putrya 1 .* 1. Mosc ow Institute of Electronic Technology (MIET), Zelenograd , Russia 2. SMC “Technological Center” MIET, Zelenograd, Russia
12.50	O3-14	The combined electromagnetic mirror as the probable breakthrough tool in electron and ion nanotechnology. *V. A. Zhukov 1 , A. V. Zavyalova 2 .* 1. .Institute for Informatics and Automation, Russian Academy of Sciences, Saint-Petersburg, Russia . 2. Vavilov State Optical Institute, Saint-Petersburg , Russia
Room A. SYMPOSIUM QI-2005
11.30	Q-20	V.L. Kurochkin, I.I.Ryabtsev, A.V.Zverev, V.K.Ovchar, I.G.Neizvestny, S.Moon, B.S.Bae, H.J.Shin, J.B.Park, C.W.Par k (Inst. semiconductor physics, Korea inst science technology), Experimental setup for long-distance quantum cryptography via optical fiber lines
11.50	Q-21	M. Kutcherov ( Krasnoyarsk State Technical University ), Thermal entanglement in a case of two spin temperatures
12.10	Q-22	S.N. Dоbryakov , V.V.Privezentsev (N.N.Semenov Institute of chemical physics , FTIAN), Simulation of EPR spectra of the singlet and triplet states of zinc-phosphorus two-spin system in silicon
12.30	Q-23	H. Thapliyal, M.B.Srinivaz (Int.Inst.informational technology, Hyderabad), Novel reversible TSG gate and its applications for designing components of primitive reversible/quantum ALU
Room B. Session 15. Micro- and Nanostructures Characterization I
11.30	O3-15	Low frequency current noise spectroscopy as a tool to study disordered materials . *M.I.* *Makoviychuk 1 , A.L. Chapkevich 2 , E.O. Parshin 1 .* 1. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia 2. Moscow Committee of Science and Technologies, Moscow , Russia
11.50	O3-16	Compensation Technique in Scanning Capacitance Microscopy. V. V. Polyakov 1 , I. V. Myagkov 2 , G. A. Tregubov 2 , An. V. Bykov 3 . 1. Moscow Institute of Physics and Technology , Russia . 2. State Research Institute for Physical Problems, Moscow , Russia . 3. NT-MDT Company, Moscow , Russia
12.10	O3-17	Simultaneous fitting of several X-ray rocking curves from different crystallographic planes of multilayer heterostructures. *M. A. Chuev 1 , A. A. Lomov 2 , R. M. Imamov 2 , I. A. Ivanov 1 .* 1. Institute of Physics and Technology , Russian Academy of Sciences, 117218 Moscow , Russia 2. A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences , Moscow , Russia
12.30	O3-18	Poly- and nanocrystalline diamond films: optical, electrical and thermal properties. V. G. Ralchenko 1 , A. F. Popovich 1 , A.V. Saveliev 1 , I.I. Vlasov 1 , A.V. Khomich 2 , V.I. Kovalev 2 , G.V. Chucheva 2 , A.D. Bozhko 3 , M.V. Chukichev 3 , A.G. Kazanskyi 3 , F.X. Lu 4 , W.M. Mao 4 , G.C. Chen 4 . 1. General Physics Institute, Russian Academy of Sciences , Moscow , Russia . 2. Institute of Radiotechnics and Electronics, Russian Academy of Sciences , Fryazino , Russia . 3. M.V.Lomonosov Moscow State University , Department of Physics , Russia 4. School of Materials Science and Engineering University of Science and Technology Beijing , P.R. China
13.30	Lunch
Conference Hall Session 16. Micro- and Nanostructures Characterization II
14.20	O3-19	Linear Sizes Measurements of Relief Elements with the Width Less Than 100 nm on a SEM. Yu.A. Novikov 1 , A.V. Rakov 1 , P.A. Todua 2 . 1. General Physics Institute, Russian Academy of Science , Moscow , Russia . 2. Center for Surface and Vacuum Research, Moscow , Russia
14.40	O3-20	Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface. L.K. Orlov, Zs. Horvath, A.S. Lonchakov, M.L. Orlov.* IPM RAS, Nizhny Novgorod, ) IMP UrB RAS, Ekaterinburg , Russia ; ** ) RITP&MS, HAS, Budapest , Hungar y*
15.00	O3-21	Spectroscopic ellipsometry based on binary modulation polarization. *V.I.* *Kovalev, A.I. Rukovishnikov.* Institute of Radio Eng. & Electronics, Russian Academy of Sciences, Fryazino, Russia
15.20	O3-22	Analysis of functionalities basic modes in Atomic Force Microscopy. *S. Krasnoborodko, V. Shevyakov, A. Tihomirov.* Moscow Institute of Electronic Equipment ( Technical University ), Zelenograd , Russia
15.40	O3-23	Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods. *N. Yarykin 1* *, R. Zhang 2 , G. Rozgonyi 2 .* 1. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia, 2.Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, USA
16.00	O3-24	Structural and nonlinear-optical studies of ultrathin Si/SiO 2 multiple quantum wells. A.A. Lomov 1 , A.G. Sutyrin 1 , D. Yu. Prohorov 1 , F.A. Pudonin 2 , T.V. Dolgova 3 , A.A. Fedyanin 3 , and O.A. Aktsiperov 3 . 1. Institute of Crystallography of RAS, Moscow , Russia . 2. Lebedev Physical Institute of RAS, Moscow , Russia 3.Department of Physics, Moscow State University , Russia
Room A. SYMPOSIUM QI-2005
14.20	Q-24	A.Yu. Bogdanov, Yu.I. Bogdanov, K.A. Valiev (FTIAN), Analysis of localized Schmidt decomposition modes and of entanglement in atomic and optical quantum systems with continuous variables
14.40	Q-25	V.P.Gerdt, V.Severianov (JINR) An algorithm for constructing polynomial systems whose solution space sharacterizes quantum circuits
15.00	Q-26	A.Mandilara (Washington University), Description of entanglement with nilpotents polynomials
15.20	Q-27	V. Vyurkov, L. Gorelik, and A.Orlikovsky (FTIAN, Chalmers Univ.), Measurement of a spin qubit array with a quantum wire
15.40	Q-28	V. Vyurkov, I. Semenikhin, L.Fedichkin, and A. Khomyakov (FTIAN, Clarkson Univ.) Effect of image forces on a charge qubit operation
16.00	Q-29	A.Tsukanov (FTIAN), To be deternimed
Room B. Session 17. Defects and Impurities in Semiconductors
14.20	O3-25	Low-temperature atomic hydrogen annealing of ion-implanted Si layers. V. Kagadei 1 , E. Nefyodtsev 2 , R. Groetzschel 3 , S. Romanenko 2 , A. Markov 2 . 1. Research Institute of Semiconductor Devices, Tomsk , Russia 2. Institute of High Current Electronics , Russian Academy of Sciences , Tomsk , Russia 3. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, Dresden , Germany
14.40	O3-26	Determination of oxygen and carbon in silicon monocrystals by radiative-luminescent method. *A.V. Yukhnevich.* Research Institute for Physico-Chemical Problems of Belarussian State University , Minsk , Belarus
15.00	O3-27	Impurity-defect interaction at the Yb + implanted silicon annealing. *D.I. Brinkevich, V.S. Prosolovich and Yu.N. Yankovski.* Belorussian State University , Minsk , Belarus
15.20	O3-28	Characteristics of the implant-isolated GaAs layers after annealing. F.F. Komarov 1 , A.M. Mironov 1 , P. Zukowski 2 . 1. Belarussian State University , Minsk , Belarus , 2. Lublin University of Technology , Lublin , Poland
16.20	Coffee break
16.30 Entresol. POSTER SESSION II
Bottom hall. Exhibition
19.30	Banquet
Friday, October 7th , 2005
9.00	Breakfast
10.00	Departure

Фотографии с конференции ICMNE-2005 и QI 2005

Информация о ICMNE-2003

By: admin-icmne

On: 22.03.2023

In: История, Конференции

Общая информация

Международная конференция «Микро- и наноэлектроника – 2005» (ICMNE-2005) проводилась 6-10 октября 2003 в отеле «Липки», Звенигород, Московская область, Россия.

Фотографии с конференции ICMNE-2003
Version for print «CONFERENCE PROGRAM«
Version for print «POSTERS»

CONFERENCE PROGRAM

Monday, October 6th, 2003

9.00 — Registration & Accommodation
13.00-14.00 Lunch

Conference hall

Special Session

16.00	S1-1	The Systems for Semiconductor Industry and Electron Beam Lithography LEO-SUPRA with electron-optic column «Gemini». A. Ul’yanenkov1, P. Czurratis2. 1. Carl Zeiss/LEO (Moscow office) 2. LEO Elektronenmikroskopie GmbH
16.30	S1-2	Microanalysis of nanostructures. F. Bauer. OXFORD Instruments GmbH/Oxford Instruments Analytical Ltd.
17.00	S1-3	From scanning probe microscopes to smart nanotechnology facilities. V. Bykov, S. Saunin. NT-MDT & NTI Companies group, Moscow-Zelenograd, Russia
17.30	S1-4	Elaboration of gallium arsenide technology in Georgia for development of microelectronic devices. N. Khuchua 1, Z. Chakhnakia 1, L. Khvedelidze 1, R. Melkadze 1, A. Tutunjan 1, R. Diehl 2. 1. Research and Production Complex (RPC) «Electron Technology» of I.Javakhishvili Tbilisi State University, Tbilisi, Georgia; 2. III-V Electronics and Optoelectronics Hardheim, Germany.

18.00 Welcome Party
19.00 Dinner

Thursday, October 7th, 2003

Conference hall

8.30 Welcome remarks

E.P. Velikhov, Conference Chair, RSC «Kurchatov Institute», Moscow
K.A. Valiev, Program Chair, IPT RAS, Moscow

Plenary Session I

8.40	L1-1	INVITED: EUV lithography: Main challenges. V. Banine & J. Benschop, ASML, Veldhoven, the Netherlands
9.10	L1-2	INVITED: Ultra thin Silicon-On-Insulator structures for post silicon microelectronics. V. P. Popov, Institute of Semiconductor Physics, RAS, Novosibirsk, Russia
9.40	L1-3	INVITED: MBE Growth of Ultrasmall Coherent Ge Quantum Dots in Silicon for Applications in Nanoelectronics. O. P. Pchelyakov, A. I. Nikiforov, B. Z. Olshanetsky, S. A. Teys. Institute os Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia
10.10	L1-4	INVITED: High-purity mono-isotopic 28Si, 29Si, 30Si. G. G. Devyatykh1, P. G. Sennikov1, A. V. Gusev1, A. D. Bulanov1, I. D. Kovalev1, A. K. Kaliteevskii2, O. N. Godisov2, H. Riemann3, N. V. Abrosimov3, H. — J. Pohl4. Institute of Chemistry of High-Purity Substances, RAS, Nizhny Novgorod, Russia; 2. STC «Centrotech-EchP», St.-Peterburg, Russia; 4. VITCON Projectconsult GmbH, Jena, Germany.

10.40-11.00 Coffee break.

Winter garden

Conference Hall

Session 1. Litho I

11.00	L1-5	INVITED: Process Optimization using Lithography Simulation. A. Erdmann. Fraunhofer Institute of Integrated Systems and Device Technology (IISB), Erlangen, Germany.
11.30	O1-1	New Method of 3D- Micro- and Nanostructures Production. B. Gurovich. Russian Research Center «Kurchatov Institute», Moscow, Russia
11.50	O1-2	Single-Domain Patterned Magnetic Media Produced by Selective Removal of Atoms. B. Gurovich, K. Maslakov, E. Kuleshova, E. Meilikhov. Russian Research Center «Kurchatov Institute», Moscow, Russia
12.10	O1-3	Scanning NanoImprinting by AFM like tool. O. Trofimov1, V. Dremov1,2, S. Dubonos1, A. Svintsov1, S. Zaitsev1. 1. Chernogolovka, Moscow distr., Russia; 2-Physikalisches Institut III Universitat Erlangen-Nurnberg Erwin-Rommel-Str. 1, Erlangen, Germany
12.30	O1-4	NanoMaker — a new soft/hardware system for nanotechnology and industrial e-beam lithography. G. Grigor’eva1, B. N. Gaifullin1, A. A. Svintsov2, S. I. Zaitsev2. IMT RAS, 1. INTERFACE Ltd, Moscow; 2. Chernogolovka, Russia

13.00-14.00 Lunch

Conference Hall

Session 2. Litho II

14.00	O1-5	The vortex mask design for irregular arrays of contact holes. P. G. Serafimovich, P. S. Ahn, J. K. Shin. Samsung Advanced Institute of Technology, Suwon, Korea
14.20	O1-6	Laser source of ions for nanotechology. B. G. Freinkman1, A. V. Eletskii2, S. I. Zaitsev2. 1. IMT RAS, Chernogolovka, Moscow distr., Russia; 2. RSC «Kurchatov Institute», Moscow.
14.40	O1-7	Laboratory methods for investigations of multilayer mirrors in Extreme Ultraviolet and Soft X-Ray region. M. S. Bibishkin, D. P. Chekhonadskih, N. I. Chkhalo, E. B. Klyuenkov, N. N. Salashchenko, I. G. Zabrodin, S. Yu. Zuev. Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia
15.00	O1-8	EUV radiation from plasma of a pseudospark discharge in its different stages. Yu. D. Korolev, O. B. Frants, V. G. Geyman, R. V. Ivashov, N. V. Landl, I. A. Shemyakin. Institute of High Current Electronics, Tomsk, Russia
15.20	O1-9	Ion lithography using FIB. Yu. B. Gorbatov, A. F. Vyatkin. Institute of Microelectronics Technology, RAS, Chernogolovka, Russia.

Room A. Session 3. Nanotransistors

14.00	O1-10	FET on Ultrathin SOI (Fabrication and Research). O. V. Naumova, I. V. Antonova, V. P. Popov, Y. V. Nastaushev, T. A. Gavrilova, M. M. Kachanova L. V. Litvin, A. L. Aseev. Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia
14.20	O1-11	Static-induction transistor for VLSI logic elements. B. Konoplev, E. Ryndin. Taganrog State University of Radio-Engineering, Taganrog, Russia
14.40	O1-12	A transistor based on space quantization effect. E. Ryndin. Taganrog State University of Radio-Engineering, Taganrog, Russia
15.00	O1-13	Epitaxial growth of silicon on porous silicon. M. Balucani1, A. Belous2, V. Bondarenko3, G. Troyanova3, A. Ferrari1. 1. Unit of Research E6 INFM, Rome University «La Sapienza», Roma, Italy; 2. Research and Design Company «Belmicrosystems», Minsk, Belarus; 3. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.
15.20	O1-14	Structure Peculiarities of Metallic Films Produced by Selective Removal of Atoms. B. Gurovich, A. Domantovsky, K. Maslakov, E. Olshansky, K. Prikhodko. Russian Research Center «Kurchatov Institute», Moscow, Russia.

Room B. Session 4. Modelling

14.00	O1-15	The Structure and Electronic Properties of Zr and Hf Nitrides and Oxynitrides. D. Bazhanov1,2, A. Safonov1,3, A. Bagatur’yants1,3, A. Korkin4. 1. Kinetic Technologies, Ltd., Moscow, Russia; 2. Physics Department, Moscow State University, Moscow, Russia; 3. Photochemistry Center, RAS, Moscow, Russia; 4. DigitalDNA Semiconductor Products Sector, Motorola Inc., USA
14.20	O1-16	A Self-consistent Modeling of the Leakage Current Through Thin Oxides. I. Polishchuk1,2, E. Burovski1,2. 1. RRC «Kurchatov institute», Moscow; 2. Kinetic Technologies, Ltd, Moscow.
14.40	O1-17	The discretization of minority carrier generation kinetics at the semiconductor surface bordering staggered inhomogeneous insulator. Yu. V. Gulyaev, A. G. Zhdan, E. I. Goldman, G. V. Chucheva. The Institute of Radio Engineering and Electronics, RAS
15.00	O1-18	Analysis of the metal single-electron arrays based on different materials. I. I. Abramov, S. A. Ignatenko. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.
15.20	O1-19	Ensemble Monte Carlo simulation of submicron n-channel MOSFETs with account of hot electron effects. V. Borzdov, V. Galenchik, O. Zhevnyak, F. Komarov, A. Zyazulya. Belarussian State University, Minsk, Belarus

15.40-16.30 Coffee break

Conference Hall

Session 5. Micro- & nanostructures characterization

16.30	O1-20	Structural diagnostics of ‘quantum’ layers by X-ray diffraction and standing waves. A. M. Afanas’ev1, M. A. Chuev1, R. M. Imamov2, E. Kh. Mukhamedzhanov2, E. M. Pashaev2, S. N. Yakunin2. 1.Institute of Physics & Technology, RAS; 2.A.V.Shubnikov Institute of Crystallography, RAS
16.50	O1-21	Characterization of patterned nanomagnet arrays by scanning probe microscopy. N. I. Polushkin, B. A. Gribkov, and V. L. Mironov. Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia
17.10	O1-22	Magnetic force microscopy of magnetization reversal of microstructures in situ in external field of up to 2000Oe. A. Bukharaev, D. Biziaev, P. Borodin, D. Ovchinnikov. Zavoisky Physical Technical Institute of RAS, Kazan, Russia.
17.30	O1-23	Study of PZT thin films of different compositions by atomic force microscopy. A. Ankudinov, I. Pronin, N. Pertsev, I. Titkov, A. Titkov. A.F.Ioffe Physico-Technical Institute, RAS, St.Petersburg, Russia.
17.50	O1-24	Local optical diagnostics of nanostructures. M. Bashevoy , A. Ezhov , S. Magnitskii, D. Muzychenko , V. Panov , J. Toursynov. Moscow State University, Russia
18.10	O1-25	Interface study of SiGe/Si multilayers by X-ray reflectivity method. S. N. Yakunin, A. A. Zaitsev, E. M. Pashaev, M. M. Rzaev, R. M. Imamov. 1. Institute of Crystallography, RAS, Russia; 2. Moscow Institute of Radio Engineering and Automatics, Russia; 3. P.N. Lebedev Physical Institute, RAS, Russia

Room A. Session 6. Nanostructures

16.30	O1-26	Local contact charging of semiconductor quantum dots by atomic force microscopy. A. N. Titkov1, M. S. Dunaevskii1, R. Laiho2. 1.Ioffe Physical-Technical Institute, RAS, St.-Peterburg, Russia; 2. Wihury Physical Laboratory, University of Turku, Finland.
16.50	O1-27	Selective growth oriented carbon nanotube. S. A. Gavrilov1, N. N. Dzbanovsky2, V. V. Dvorkin2, E. A. Il’ichev1, B. K. Medvedev1, E. A. Poltoratsky1, G. S. Rychkov1, N. V. Suetin2. 1. State Research Institute of Physical Problems, Russia; 2. Nuclear Physics Institute, Moscow State University, Russia
17.10	O1-28	Nanotubes for nanoelectronics: growth and characterization. S. V. Plusheva, I. V. Khodos, L. A. Fomin and G. M. Mikhailov. Institute of Microelectronics echnology RAS, Chernogolovka
17.30	O1-29	Glass-encapsulated Single-crystal Nanowires and Filiform Nanostructures Fabrication. E. Badinter1, T. Huber2, A. Ioisher1, A. Nikolaeva3, I. Starush1. 1.Institute ELIRI s.a., Moldova; 2.Howard University, USA; 3. Institute of Applied Physics, Moldova.
17.50	O1-30	Epitaxial SiC nanocrystals at the Si/SiO2 interface: electrical behaviour. L. Dozsa1, Zs. J. Horvath1, O. H. Krafcsik1, Gy. Vida2, P. Deak2, T. Mohacsy1. 1. Hungrian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, Hungry; 2.Dept. of Atomic Physics, Budapest University of Technology and Economics, Budapest, Hungary
18.10	O1-31	Composite nanostructures based on porous silicon host. M. Balucani1, V. Bondarenko2, G. Troyanova2, A. Ferrari1. Unit of Research E6, INFM, Roma University «La Sapienza», Roma, Italy; 2. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus

Room B. Session 7. Magnetic nanostructures.

16.30	O1-32	Approach to terabit density for magnetic data storage using direct optical patterning of Fe(Co)-based thin films. N. I. Polushkin, B. A. Gribkov, A. Ya. Lopatin. Institute of Physics of Microstructures, RAS, Nizhny Novgorod, Russia
16.50	O1-33	Ferroelectric barium-strontium titanate films: electrical properties, microstructure, applications. O. M. Zhigalina1, O. V. Chuprin2, K. A. Vorotilov2, V. A. Vasil’ev2, A. S. Sigov2, Yu. V. Grigoriev1, N. M. Kotova3. 1.Institute of Crystallography, RAS, Russia; 2.Moscow State Technical University of Radioengineering, Electronics and Automation, Moscow, Russia; 3. Institute of Physical Chemistry, Moscow, Russia.
17.10	O1-34	Magnetization reversal due to spin injection in magnetic junction. R. J. Elliott1, E. M. Epshtein2, Yu. V. Gulyaev2, P. E. Zilberman2. 1. University of Oxford Department of Physics, UK; 2. Institute of Radio Engineering and Electronics, RAS, Russia.
17.30	O1-35	Some peculiarities of longitudinal magneto-resistance in single crystal wires of pure and doped bismuth. D. Gitsu1, T. Huber2, L. Konopko1, A. Nikolaeva1,3. 1. Institute of Applied Physics, AS, Moldova; 2.Department of Chemistry, Woward University, Washington, USA; 3. International Laboratory of High Magnetic Fields and Low Temperatures, Wroclav, Poland.
17.50	O1-36	Research of optical and structural properties in multilayer films (Ni22ACo75A) x20L. G. Bauhuis2, A. Keen2, H. von Kempen2, A. Matvienko1, A. Ostroukhova1, A. Pogorely1, T. Rasing2. 1. Institute of Magnetism of NAS of Ukraine, Kiev, Ukraine .2. Research Institute for Materials, University of Nijmegen, Nijmegen, The Nitherlands
18.10	O1-37	Epitaxial Ni Films and Giant Magnetoresistance in Ballistic Ni Nanostructures. I. V. Malikov, V. Yu. Vinnichenko, L. A. Fomin and G. M. Mikhailov. Institute of Microelectronics Technology& High Purity Materials RAS, Chernogolovka, Moscow.

19.00 Dinner

Wednesday, October 8th 2003

07.50 Breakfast

Conference hall.

Session 8. Photonics

08.30	L2-6	INVITED: Elements of electron-photonic integrated systems. V. V. Aristov, M. Yu. Barabanenkov, V. N. Mordkovich. Institute of Microelectronics Technology and High Purity Materials RAS.
09.00	L2-7	INVITED: Macroporous silicon: material science and technology. A. F. Vyatkin. Institute of Microelectronics Technology and High Purity Materials RAS.
09.30	O2-38	1D photonic crystals based on periodically grooved Si. V. Tolmachev1, E. Astrova1, T. Perova2. 1. Ioffe Physico-Technical Institute, St.-Peterburg, Russia; 2. Dept. Electr.& Electr. Eng., Trinity College, Dublin, Ireland.
09.50	O2-39	White light emission from nanostructures embedded in ultra-shallow silicon p-n junctions. N. T. Bagraev, A. D. Bouravleuv, L. E. Klyachkin and A. M. Malyarenko. A.F. Ioffe Physico-Technical University, St.Petersburg, Russia.
10.10	O2-40	A 512 Х 512 IR PtSi CMOS IMAGE SENSOR. S. Abramov, A. Belin, A. Gvaskov, V. Guminov, V. Zolotariov, V. Zoubkov, A. Popov, G. Rudakov, V. Rjabik, D. Churbanov. Matrix technologies inc.

10.30 Coffee break

Conference hall.

Session 9. Si/Ge heterostructures

11.00	O2-41	Spin transport in Ge/Si quantum dot array. A. V. Nenashev, A. F. Zinovieva, A. V. Dvurechenskii. Institute of Semiconductor Physics, RAS, Novosibirsk, Russia.
11.20	O2-42	Structural, photoluminescence and electrical properties of n-Si1-хGeх/n+(p)-Si heterojunction in relaxed Si1-хGeх/Si structure. L. K. Orlov1, A. V. Potapov1, M. L. Orlov1, V. I. Vdovin2, E. A. Steinman3, Zs. J. Horvath4, L. Dozsa4. 1.Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia; 2. Institute for Chemical problems of Microelectronics, Moscow, Russia; 3. Institute of Solid State Physics, RAS, Chernogolovka, Russia; 4. Research Institute for Technical Physics and Materials Science, HAS, Budapest, Hungary.
11.40	O2-43	Electronic properties of the Si-Si1-хGeх field effect transistor heterostructures: electrical and electrophysical measurements. L. K. Orlov , A. V. Potapov, N. L. Ivina, R. A. Rubtsova, Zs. Horvath, L. Dozsa, A. S. Lonchakov, Yu. A. Arapov. 1.Institute for Physics of Microstructures, RAS; 2. State Lobachevsky University, Nizhny Novgorod, Russia; 3. Research Institute for Technical Physics and Materials Science, HAS, Budapest, Hungary; 4. Institute of Metal Physics RAS, Ekaterinburg.
12.00	O2-44	Investigation of transport mechanisms in a-SiGe:H/c-Si heterostrucrures. A. Sherchenkov, B. Budaguan, A. Mazurov. Institute of Electronic Technology, Moscow, Russia.
12.20	O2-45	Implanted quantum-dimensional SiGe structures. N. N. Gerasimenko1 and Yu. V. Parhomenko2. 1. Moscow Institute of Electronic Engineering; 2. Moscow Institute of Steel and Alloys.
12.40	O2-46	Surface morphology transitions induced by ion beam action during Ge/Si MBE. A. V. Dvurechenskii, J. V. Smagina, V. A. Zinovyev, V. A. Armbrister. Institute of Semiconductors Physics of the Siberian Branch of the RAS, Novosibirsk

13.00 Lunch

Conference hall.

Session 10. HDP processing.

14.00	O2-47	Microwave discharge on external surface of quartz plate. V. M. Shibkov, A. P. Ershov, O. S. Surkont. Moscow State University, Physical Depart., Moscow, Russia.
14.20	O2-48	Comparative study of inductively coupled and microwave BF3 plasmas for microelectronic technology applications. Ya. N. Sukhanov, A. P Ershov, K. V. Rudenko and A. A. Orlikovsky. Institute of Physics and Technology RAS, Moscow, Russia.
14.40	O2-49	Volume and heterogeneous chemistry in Cl2/Ar inductively coupled plasma. A. Efremov 1,2, V. Svettsov 1, C. — I. Kim 2. 1. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia; 2. Chung-Ang University, Seoul, Korea.
15.00	O2-50	Formation of micro-and nanostructures in Si and SiO2 by using plasma etching and deposition processes. I. Amirov, M. Izyumov, O. Morozov, A. Shumilov. Institute of Microelectronics and Informatics, RAS, Yaroslavl, Russia.
15.20	O2-51	Precise speeding shallow trench etch development for power electronics. V. Galperin, V. Zuev. OAO Angstrem, Zelenograd, Russia.

Room A. Session 11. Technological processes I.

14.00	O2-52	Investigation of Zirconia Film Growth Using kinetic Monte Carlo (kMC), Molecular Dynamics (MD) and integrated kMC-MD Approaches. A. Knizhnik1, A. Bagatur’yants1, B. Potapkin1 and A. Korkin2. 1.Kinetic Technologies, Moscow, Russia; 2. Semiconductor Products Sector, Motorola Inc., USA
14.20	O2-53	CANCELLED!
14.40	O2-54	AlGaAs-GaAs heterostructure ?-doped field-effect transistor (?-FET). Z. Chakhnakia 1, Z. Hatzopoulos 2, L. Khvedelidze 1, N. Khuchua 1, R. Melkadze 1, G. Peradze 1. 1. Research & Production Complex «(RPC) Electron Technology» of Tbilisi State University, Tbilisi, Georgia; 2. Foundation for Research and Technology — Hellas (FORTH) Institute of Electron Structure & Lasers, Heraklion, Greece.
15.00	O2-55	Ion beam synthesis of cobalt silicides in Si and SiGe. G .G. Gumarov1, V. Yu. Petukhov1, V. A. Shustov1, O. P. Pchelyakov2, V. I. Mashanov2, I. B. Khaibullin1. 1. Kazan Physical-Technical Institute, RAS, Kazan, Russia; 2. Institute of Semiconductor Physics, RAS, Novosibirsk, Russia.
15.20	O2-56	Planarization process of CMOS RAM multilevel interconnection system. V. A. Vasil’ev1, K. A. Vorotilov1, A. S. Valeev2, V. I. Shishko2, V. V. Mishin1, C. P. Volk2, A. S. Sigov1. 1. Moscow State Institute lf Radioengineering, Electronics and Automation, Moscow, Russia; 2. Scientific and Research Institute of Molecular Electronics and Mikron plant, Moscow, Russia.

Room B. Session 12. Technological processes II.

14.00	O2-57	Investigation of the dynamics of recrystallization and melting of the surface of implanted silicon at rapid thermal processing. Ya. Fattakhov, M. Galyautdinov, T. L’vova, M. Zakharov, I. Khaibullin. Kazan Physico-Technical Institute, RAS, Kazan, Russia.
14.20	O2-58	The Peculiarities of BF2 Ion Implantation During of Silicon MDS Integration Circuit Formation. A. N. Tarasenkov, N. N. Gerasimenko. Moscow Institute of Electronic Technology (Technical University), Zelenograd, Russia.
14.40	O2-59	Phases transformation in Ti(Ta)-Ni(Co)-Si-N systems. I. Horin1, A. A. Orlikovsky1, A. G. Vasiliev1,2, A. L. Vasiliev3,4. 1. Institute of Physics&Technology (IPT), RAS, Moscow, Russia; 2.Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Moscow, Russia; 3. Institute of Crystallography, RAS, Moscow, Russia; 4. Department of Metallurgy and Materials Eng., Institute of Materials Science, University of Connecticut, Storrs, USA.
15.00	O2-60	Ultra-low k dielectric for multilevel metallization system. V. V. Mishin, A. S. Sigov, V. A. Vasil’ev, K. A. Vorotilov. Moscow State Institute of Radioengineering, Electronics and Automation, Moscow, Russia.
15.20	O2-61	Development of copper metallization for VLSI using diffusion barrier Ta-W-N layer. A. Klimovitskiy, E. Leonova, A. Mochalov. Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Moscow, Russia.

15.40 Coffee break

16.30 Entresol. Poster Session I

Bottom hall. Exhibition

19.00 Dinner

Thursday, October 9th 2003

08.00 Breakfast

09.00 Conference hall

Plenary session II

09.00	L3-8	INVITED: Developments of Terahertz Wave Generation Technologies. Ken Suto1, Jun-ichi Nishizawa2,3. 1. Department of Materials Science, Tohoku University, Japan; 2. Photodynamics Research Center, Japan; 3. Semiconductor Research Institute, Japan.
09.30	L3-9	INVITED: Electron-phonon interaction in 2D heterostructures. J. Pozela. Semiconductor Physics Institute, Vilnius, Lithuania.
10.00	L3-10	INVITED: Investigation of physical and technological limits for sub-100 nm III-nitride transistors. S. Shapoval. Institute of Microelectronics Technology RAS, Chernogolovka, Russia.

10.30 Coffee break

11.00 Conference hall.

Session 13. UHF transistors and IC

11.00	O3-62	Ultra high frequency AlGaN/GaN-transistor with inverted 2DEG Channel. V. G. Mokerov1, L. E. Velikovskii1, M. B. Vvedenskii1, Z. T. Kanametova1, V. E. Kaminskii1, P. V. Sazonov1, D. S. Silin1, J. Graul2, O. Semchinova2. 1. Institute of UHF Semiconductor Electronics of RAS, Moscow, Russia; 2. Laboratories for Informationstechnologie, University Hanover, Germany.
11.20	O3-63	Low temperature technology of semiconductor devices and integrated circuits. A. Bibilashvili, Z. Bokhochadze, A. Gerasimov, R. Kazarov, Z. Kushitashvili, I. Lomidze, T. Ratiani, Z. Samadashvili. Microelectronics chair of Tbilisi State University, Tbilisi, Georgia.
11.40	O3-64	Very-high-speed planar integrated circuit technology based on monolithic integration of RTD and SFET. A. Gorbatsevich1, I. Kazakov2, B. Nalbandov1, S. Shmelev1, A. Tsibizov2. 1. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia; 2. P.N. Lebedev Physical Institute, RAS, Moscow, Russia.
12.00	O3-65	10 GHz 1:2 Switch MMIC for the communication and radar applications. V. G. Mokerov, D. L. Gnatyuk, B. G. Nalbandov, E. N. Ovcharenko, A. P. Lisitskii. Institute of UHF Semiconductor Electronics, RAS, Moscow, Russia.
12.20	O3-66	Multichannel high-speed gallium arsenide integrated circuits for signal processing systems. V. Bespalov, L. Burzina, A. Gorbatsevich, M. Kirillov, B. Nalbandov, S. Schmelev. Scientific and Education Center LPI and MIET on Quantum Devices and Nanotechnologies, Moscow, Russia.
12.40	O3-67	Photoluminescence characterization of resonant-tunneling diodes based on the GaAs/AlGaAs long-period superlattices in process of fabrication. A. A. Belov , A. L. Karuzskii , I. P. Kazakov , Yu. A. Mityagin , V. N. Murzin , A. V. Perestoronin, A. A. Pishchulin , S. S. Shmelev. P.N.Lebedev Physical Institute of RAS, Moscow, Russia.

13.00 Lunch

14.00 Conference hall.

Session 14. Nanostructures physics

14.20	O3-68	Pulsed laser deposition of ZnO thin films. Zherikhin A. N., Khudobenko A. I., Panchenko V. Ya.
14.40	O3-69	Non-universal scaling in the integral quantum Hall regime in two-dimensional electon gas in InGaAs/InP heterostructures. B. Podor1,2, Gy. Kovacs3, G. Remenyi4, I. G. Savel`ev5. 1. Research Institute for Technical Physics and Materials Science, HAS, Budapest, Hungary; 2. Budapest Polytechnic, Kando Kalman Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Budapest, Hungary; 3. Department of General Physics, Eotvos Lorand University, Budapest, Hungary; 4. CNRS Center de Recherches sur les Tres Basses Temperatures et Laboratoire des Champs Magnetiques Intenses, Grenoble, France; 5. A.F.Ioffe Physical Technical Institute, RAS, St.Peterburg, Russia.
15.00	O3-70	Ballistic transport in quantum interference devices. A. A. Gorbatsevich1, V. V. Kapaev2. 1. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia; 2. P.N. Lebedev Physical Institute, RAS, Moscow, Russia.
15.20	O3-71	New peculiarities of interband tunneling in broken-gap heterostructures. A. Zakharova1, S. T. Yen2, K. A. Chao3. 1. Institute of Physics and Technology RAS, Moscow, Russia; 2. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China; 3. Department of Physics, Lund University, Sweden.
15.40	O3-72	Structural, photoluminescence and electrophysical properties of the porous multilayer InGaAs/GaAs heterostructures. L. K. Orlov1, N. L. Ivina1, N. A. Alyabina1, N. V. Vostokov2, R. A. Rubtsova1. 1. State Lobachevsky University; 2. Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia.

Room A. Session 15. MEMS and Sensors

14.20	O3-73	Integrated sensor of current. V. Amelichev1, A. Galushkov1, S. Polomoshnov2, Iu. Chaplygin2 . 1. State Research Center Scientific and Manufacturing Coplex of the RF «Technological Center» at MIET, Moscow-Zelenograd, Russia; 2. Moscow State Institute of Electronic Technology Moscow-Zelenograd, Russia.
14.40	O3-74	Linear electrostatic micromotors for nano- and micro-positioning. I. L. Baginsky and E. G. Kostsov. Institute of Automation and Electrometry, RAS, Novosibirsk, Russia.
15.00	O3-75	Constructive-technological methods of self-forming — the base for fabrication of operating and sensitive elements for integrated microsystems. A. I. Galushkov, A. N. Saourov. SMC «Technological Center» MIEE, Moscow, Russia.
15.20	O3-76	3D micromachined gyroscope. I. Lysenko, B. Konoplev. Taganrog State Universitu of Radio-Engineering, Taganrog, Russia.
15.40	O3-77	Bolometric matrix multiplexer. V. Minaev1, E. Volodin, V. Zyubin, V. Chesnokov, I. Mikhalev, E. Muryleva, Yu. Fortinsky, Yu. Tschetverov. 1. JSC «Angstrem-M», Moscow, Russia; 2. JSC «Angstrem-M», Moscow, Russia; 3. JSC «ITTP IP», Moscow, Russia.

Room B. Session 16. Quantum Informatics.

14.20	O3-78	Models of ensemble NMR quantum cellular automata based on artificial and natural electronic antiferromagnets. A. A. Kokin. Institute of Physics and Technology of RAS, Moscow, Russia.
14.40	O3-79	Quantum key distribution on polarized single photons. V. L. Kurochkin, I. I. Ryabtsev, I. G. Neizvestny. Institute of Semiconductor Physics, RAS, Novosibirsk, Russia.
15.00	O3-80	Anomalous Transport in Sisyphus Cooling Optical Lattice Scheme and Levy Distributions. M. P. Kondrashin, V. P. Yakovlev. Moscow State Engineering Physics Institute (state university), Russia.
15.20	O3-81	Negative-U properties for a quantum dot. N. T. Bagraev1, A. D. Bouravleuv1, L. E. Klyachkin1, A. M. Malyarenko1, I. A. Shelykh2. 1. A.F.Ioffe Physico-Technical Institute, St.Peterburg, Russia; 2. St. Peterburg State Technical University, St.Peterburg, Russia.
15.40	O3-82	Dynamics of entangled states of nuclear spins in solids. S. I. Doronin. Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia.
16.00	O3-83	Noise-resistant quantum key distribution protocol. D. V. Sych, B. A. Grishanin, and V. N. Zadkov. International Laser Center and Department of Physics M. V. Lomonosov Moscow State University, Moscow, Russia.

16.20 Coffee break

16.30 Entresol. Poster session II

Bottom hall. Exhibition

19.30 Banquet

Friday, October 10th, 2003

09.00 Breakfast

10.00 Departure

POSTERS

October 8th. 2003

Poster session I
Entresol

P 1-1	Structure Peculiarities of Metallic Films Produced by Selective Removal of Atoms. B. Gurovich, A. Domantovsky, K. Maslakov, E. Olshansky, K. Prikhodko. Russian Research Center «Kurchatov Institute», Moscow, Russia.
P1-2	Electrical Properties of Metal Films Prepared by Selective Removal of Atoms. B. Gurovich1, K. Prikhodko1, A. Domantovsky1, D. Dolgy1, E. Ol’shansky1, B. Aronzon1, Y. Lunin2. 1. Russian Research Center «Kurchatov Institute», Moscow, Russia; 2. Institute for System Studies, RAS, Moscow, Russia.
P 1-3	Increasing of electric strength in the pseudospark gap with a high pulse repetition rate. Yu. D. Korolev, O. B. Frants, V. G. Geyman, R. V. Ivashov, N. V. Landl, I. A. Shemyakin. Institute of High Current Electronics, Tomsk, Russia.
P1-4	Heat — resistant light-sensitive polymer compositions based on poly(o — hydroxyamides) — heat-resistant photolacks. L. Rudaya1, N. Klimova1, T. Yourre1, G Lebedeva2, I. Sokolova3. 1. St. Petersburg State Technological Institute (Technical University), St. Petersburg, Russia; 2. Institute of Macromolecular Compounds, RAS, St. Petersburg, Russia; 3. St. Petersburg State Electr technical University (LETI), St. Petersburg, Russia.
P 1-5	Pre-exposure thermal treatment of photoresist layers under elevated pressure as applied to lithographic technologies of photomask and integrated microcircuit manufacture. V. A. Peremyshchev1, V. V. Martynov2. 1.Technology. Equipment. Materials company, Moscow, Russia; 2. Submicro Research and Development Association, Zelenograd, Russia.
P1-6	Discharge pumped table-top EUV laser on dense plasma of multi charged ions. V. Burtsev, E. Bol’shakov, V. Chernobrovin, N. Kalinin. Efremov Scientific Research Institute of Electrophysical Apparatus, St. Petersburg, Russia.
P1-7	Automatical Optimization of Pupil Filters for High-Resolution Photolithography. M. Machin, M. Gitlin, N. Savinskii. Institute for Microelectronics and Informatics of RAS.
P1-8	Self-align technology for nanotransistors channel forming. K. Valiev, A. Krivospitsky, A. Okshin, A. Orlikovsky, Yu. Semin. Institute of of Physics and Technology, RAS, Moscow, Russia
P1-9	The effect of imaging forces in ultra thin gate insulator on the tunneling current and its oscillations at the region of transition from the direct tunneling to the Fowler-Nordheim tunneling. E. I. Goldman, N. F. Kukharskaya, G. V. Chucheva and A. G. Zhdan. The Institute of Radio Engineering and Electronics, RAS.
P 1-10	Initiated tunnel current through thin gate oxide generation minority carriers in Si-MOS-structures. G. V. Chucheva1, A. S. Dudnikov2, E. I. Goldman1, N. A. Zaitsev2, A. G. Zhdan1. 1. The Institute of Radio Engineering and Electronics, RAS; 2. JSC «Mikron Corporation».
P1-11	Investigation of the leakage currents in SOI MOSFET with the nanoscale channel length. A. A. Frantsusov, N. I. Bojarkina, M. A. Ilnitsky, V. P. Popov, L. N. Safronov. Institute of Semiconductor Physics, RAS, Novosibirsk, Russia.
P 1-12	Gamma radiation tolerance of 0.5 µm SOI MOSFETs. O. V. Naumova, A. A. Frantsuzov, V. P. Popov. Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia.
P1-13	The application of Thomas-Fermi equation for the modelling of an intra-atomic potential in the ultrathin gate dielectric. G. Krasnikov, A. Eremenko, N. Zaitsev, I. Matyushkin. Research and Development Institute for Molecular Electronics and Plant MICRON, Moscow, Zelenograd, Russia.
P 1-14	Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin film. A. V. Khomich1, V. I. Kovalev1, A. S. Vedeneev1, A. G. Kazanskyi2, P. A. Forsh D. He2, X. Q. Wang3, H. Mell4. 1. Institute of Radiotechnics and Electronics, RAS, Fryazino, Russia; 2. M.V. Lomonosov Moscow State University, Department of Physics, Moscow, Russia; 3. Lanzhou University, Department of Physics School of Physical and Technology, Lanzhou, China; 4. Philipps-Universitat Marburg, Fachdereich Physik, Marburg, Germany.
P1-15	Polycrystalline silicon for semiconductor devices. D. Milovzorov. Institute of Physics and Technology, RAS, Moscow, Russia.
P 1-16	Ion synthesis of silicate glasses: simulation, process engineering and applied aspects. S. Krivelevich, E. Buchin, Yu. Denisenko, A. Tsyrulev. Institute of Microelectronics and Informatics, RAS, Yaroslavl, Russia.
P1-17	Investigation of energy levels in Si subjected high-temperature diffusion annealing in Zn atmosphere. Kornilov B.V., Privezentsev V. V. Institute of Physics and Technology, RAS, Moscow, Russia.
P1-18	Influence of cells-MOSFETs with Schottky barrier drain contact location in power IC on electrical device characteristics. M. Korolev1, A. Krasukov1, R. Tihonov2. 1. Moscow State Institute of Electronics Engineering; 2. Scientific Manufacturing Center «Technological Center», Moscow, MSIEE
P1-19	Functional Diagnostics of the Metal Diffusion in Silicon. A. E. Berdnikov, V. N. Gusev, A. A. Popov, V. I. Rudakov, V. D. Chernomordik. Institute of Microelectronics and Informatics RAS, Yaroslavl, Russia.
P1-20	Development of the scanning spreading resistance microscopy for nanoscale structure properties investigation. V. Shevyakov1, S. Lemeshko2, A. Tihomirov1. 1. Moscow Institute of Electronic Engineering, Zelenograd, Moscow, Russia; 2. Molecular Devices and tools for nanotechology Co., Zelenograd, Moscow.
P1-21	Application of piezoelectric monocrystals in devices of exact positioning of probe microscopes. V. Antipov, M. Malinkovich, Yu. Parkhomenko. Moscow Steel and Alloys Institute, Russia.
P1-22	Low-Frequency Noise in Disordered Silicon Systems. M. I. Makoviychuk1, E. O. Parshin1, A. L. Chapkevich2. 1. Institute of Microelectronics & Informatics, RAS, Yaroslavl, Russia; 2. Moscow Committee of Science and Technologies, Moscow, Russia.
P1-23	Characterization of nanocrystals in porous germanium layer by X-RAY diffraction. A. Lomov1, V. Bushuev2, V. Karavanskii 3. 1. A.V. Shubnikov Institute of Crystallography, RAS, Moscow, Russia; 2. M.V. Lomonosov Moscow State University, Moscow, Russia; 3. Institute of Natural Sciences Center of General Physics Institute, RAS, Moscow.
P1-24	Advanced capabilities of binary modulation polarization ellipsometry. V. I. Kovalev, A. I. Rukovishnikov, A. V. Khomich. Institute of Radiotechnics and Electronics, RAS, Fryazino, Russia.
P1-25	Nonlinear-optical microscopy for polarization switching in thin ferroelectric films. E. Mishina1, N. Sherstyuk1, K. Vorotilov1, A. Sigov1, Th. Rasing2, V. M. Mukhortov3. 1. Moscow State Institute of Radioengineering, Electronics and Automation, Russia; 2. University of Nijmegen, The Netherlands; 3. Institute of General Physics, RAS, Moscow, Russia.
P1-26	PMMA and polystyrene films modification under ion implantation studied by spectroscopic ellipsometry. A. V. Leontyev1, V. I. Kovalev2, A. V. Khomich2, F. F. Komarov1. 1. Belorussian State University, Minsk, Belarus; 2. Institute of Radiotechnics and Electronics, RAS, Fryazino, Russia.
P1-27	Ellipsometric investigation of buried layers in ion-implanted and annealed silicon and diamond structures. V. I. Kovalev1, A. V. Khomich1, A. I. Rukovishnikov1, R. A. Kmelnitskyi2, E. V. Zavedeev3. 1. Institute of Radiotechnics and Electronics, RAS, Fryazino, Russia; 2. Lebedev Physical Institute, RAS, Moscow, Russia; 3. General Physics Institute, RAS, Moscow, Russia.
P1-28	Computer Simulation Application for Improving Correctness of Data Obtained by Magnetic Force Microscope. D. Ovchinnikov, A. Bukharaev. Zavoisky Physical Technical Institute of RAS, Kazan, Russia.
P1-29	Investigation of dissolution process of implanted silicon dioxide. N. Nurgazizov, A. Bukharaev. Zavoisky Physical Technical Institute of RAS, Kazan, Russia.
P1-30	Wave-ordered structure on silicon surface and its modification by wet and dry etching. D. S. Kibalov, I. V. Zhuravlev, P. A. Lepshin, G. F. Smirnova, I. I. Amirov, V. K. Smirnov. Institute of Microelectronics and Informatics, RAS, Yaroslavl, Russia.
P1-31	Simulation of a ballistic field effect nanotransistors. A. A. Sidorov, V. V. V’yurkov, and A. A. Orlikovsky. Institute of Physics and Technology RAS, Moscow
P1-32	Bi films for the fabrication of nanowires by the probe lithography. A. Chernykh, A. Il’in, O. Kononenko, G. Mikhailov. Institute of Microelectronics Technology & High Purity Materials, RAS, Chernogolovka, Moscow.
P1-33	Current transport and photoelectric properties of silicon nanocomposite — porous SiC. V. I. Sokolov1, M. V. Zamoryanskya1, L. V. Grigoryev2, V. A. Berbetc2, V. E. Ter-Nersysiants2. 1. Ioffe Physicotechnical Institute, St. Peterburg, Russia; 2. St.Petersburg University, Physical Research Instituteб Russia.
P1-34	The research system for experiments on studying the gas medium influence on the electroforming process. V. Levin, V. Mordvintsev. Institute of Microelectronics and Informatics, Russian Academy of Sciences, Yaroslavl, Russia.
P1-35	Current transport in thermooxidized silicon nanocomposite. V. I. Sokolov, M. V. Zamoryanskya, L. V. Grigoryev, V. A. Berbetc, V. E. Ter-Nersysiants 1. Ioffe Physicotechnical Institute, St.Petersbyrg, Russia; 2. St.Petersburg University, Physical Research Institute.
P1-36	An Investigation into Nano-Sized Fractal Film Structures. I. Serov 1, G. Lukyanov2, V. Margolin 1 , N. Potsar 3 , I. Soltovskaya 1 , V. Fantikov 3. 1. Aires New Medial Technologies Foundation, St. Petersburg, Russia; 2. St. Petersburg State Institute of Fine Mechanics and Optics (Technical University); 3. St. Petersburg State Electrotechnical University (LETI), St. Petersburg, Russia.
P1-37	The features of electroforming in open sandwich structures Si-SiO2-W for silicon of different types of conductivity. V. Mordvintsev, S. Kudryavtsev, V. Levin. Institute of Microelectronics and Informatics, Russian Academy of Sciences, Yaroslavl, Russia.
P1-38	Influence of electrostatic interaction between a conducting cantilever and a metal film on the local anodic oxidation. A. N. Bulatov, V. K. Nevolin. Moscow State Institute of Electrical Engineering, Zelenograd, Moscow, Russia.
P1-39	Electron Beam Induced Deposition of Iron Carbon Nanostructures from Iron Dodecacarbonyl Vapour. M. A. Bruk1, E. N. Zhikharev2, E. I. Grigoriev1, A. V. Spirin1, V. A. Kalnov2, I. E. Kardash1. 1. Kaprov Institute of Physical Chemistry, Moscow, Russia; 2. Physics & Technology Institute of Russian Academy of Science, Moscow, Russia.
P1-40	PZT nanostructures templated into porous alumina membranes. V. A. Vasil’ev 1 , E. D. Mishina 1 , K. A. Vorotilov 1 , A. S. Sigov 1 , O. Zhigalina 2 , N. M. Kotova 3. 1. Moscow State Institute of Radioengineering, Electronics and Automation, Moscow, Russia; 2. Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia; 3 Institute of Physical Chemistry, Moscow, Russia.
P1-41	Diffusive and ballistic regime for transfer resistances. V. Yu. Vinnichenko, A. V. Chernykh and G. M. Mikhailov. Institute of the Microelectronic Technology and High Pure materials RAS , 142432 , Chernogolovka , Moscow Region , Russia.
P1-42	The investigations of ferroelectric thin films in virtual measuring system. E. Pevtsov, A. Sigov, A. Pyzhova, A. Gorelov. Moscow State Institute of Radioengineering, Electronics & Automation (Technical University), Russia
P1-43	MFM study and computer simulation of domain structures in permalloy elements. A. G. Temiryazev. Institute of Radioengineering & Electronics RAS, Fryazino, Russia.
P1-44	Fast ferroelectric domain switching probed by second harmonic generation. E. D. Mishina 1 , N. E. Sherstyuk 1 , A. S. Sigov 1 , A. V. Mishina 2 , V. M. Mukhortov3 , Th. Rasing 4. 1. Moscow State Institute of Radioengineering, Electronics and Automation, Moscow, Russia; 2. Tver State Technical University, Tver, Russia; 3. Institute of General Physics, Russian Academy of Science, Moscow, Russia, 4. University of Nijmegen, The Netherlands.
P1-45	Ferroelectric nanostructures sputtered on alumina membranes. E. D. Mishina 1, V. I. Stadnichuk 1, A. S. Sigov 1, Yu. I. Golovko 2, V. M. Mukhorotov 2, Th. Rasing 3. 1. Moscow State Institute of Radioengineering, Electronics and Automation, Moscow; 2. Institute of General Physics, Russian Academy of Science, Moscow, Russia. 3. University of Nijmegen, The Netherlands.
P1-46	FMR investigation of permalloy array structures. Yu. A. Filimonov1, S. A. Nikitov2, A. V. Butko3, A. V. Kozhevnikov1, A. A. Veselov1, S. L. Vysotsky. 1. Institute of Radioengineering & Electronics, RAS, Saratov Department, Saratov, Russia; 2. Institute of Radioengineering& Electronics, RAS, Moscow, Russia.
P1-47	Magnetic properties of DC magnetron sputtered thin nickel films. A. S. Dzhumaliev, Yu. A. Filimonov, S. N. Vasiltchenko, A. V. Kozhevnikov, S. L. Vysotsky. Institute of Radioengineering & Electronics, RAS, Saratov Department, Saratov, Russia
P1-48	Influence of growth temperature on the easy magnetization axis switch and domain structure in Fe/GaAs(100) structures. Yu. Filimonov, A. Dzhumaliev, A. Kozhevnikov, S. Vysotsky. Institute of Radioengineering & Electronics, RAS, Saratov Department, Saratov, Russia.
P1-49	Tomographic reconstruction of space plasma inhomogeneities in wide aperture plasma technology equipment under strong restriction on the points of view. K. V. Rudenko, A. V. Fadeev, A. A. Orlikovsky, and K. A. Valiev. Institute of Physics and Technology RAS, Moscow, Russia.
P1-50	Etching mechanism of Au thin films in Cl2/Ar inductively coupled plasma. A. Efremov 1,2, V. Svettsov 1, C. — I. Kim 2. 1. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia; 2. Chung-Ang University, Seoul, Korea.
P1-51	Investigation of influence of low energy ion beam parameters on process of Reactive Ion Beam Synthesis (RIBS) of thin films. Y. P. Maishev, S. L. Shevchuk. Institute of Physics and Technology RAS, Moscow, Russia.
P1-52	Application RIE system in precise piezoelectric quartz resonators and filters manufacture. V. Galperin, V. Zuev. OAO Angstrem, Zelenograd, Russia.
P1-53	Simulation of technological process by etching of microstructures in high-voltage gas discharge plasma. N. Kazanskiy, V. Kolpakov. Image Processing Systems Institute, RAS, Samara, Russia
P1-54	The equation of a two-dimensional island growth on the incommensurable monocrystalline substrate. Yu. N. Devyatko, S. V. Rogozhkin, A. V. Fadeev. Moscow engineering-physical institute (state university), Moscow, Russia.
P1-55	The mathematical modeling of the polymerization processes during the high-temperature oxidation of silicon. G. Krasnikov, A. Eremenko, N. Zaitsev, I. Matyushkin. Research and Development Institute for Molecular Electronics and Plant MICRON Moscow, Zelenograd, Russia.
P1-56	Defects in YSZ films induced by electric breakdowns during magnetron deposition on Si substrate. V. G. Beshenkov, V. A. Marchenko, A. G. Znamenskii. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia.
P1-57	Application of modified moments method for kinetics description of nano-, micro -particles formation in gas phase. A. Durov, M. Deminsky, M. Strelkova, B. Potapkin. RRC «Kurchatov Institute», 123182, Kurchatov sq. 1, Moscow, Russia.
P1-58	First principle calculations of interactions of ZrCl4 precursors with bare and hydroxylated ZrO2 surface. I. M. Iskandarova 1, A. A. Knizhnik 1, E. A. Rykova 1, A. A. Bagatur’yants 1, B. V. Potapkin 1, A. A. Korkin 2. 1. Kinetic Technologies Ltd., Moscow, Russia; 2. Semiconductor Products Sector, Motorola Inc., Mesa, USA.
P1-59	Vanadium reactive magnetron sputtering in mixed Ar/O2 discharges. V. A. Marchenko. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia.
P1-60	Some properties of titanium nitride films deposited by reactive magnetron sputtering. V. Bochkaryov, S. Kudryavtsev, V. Mordvintsev, N. Timina, L. Tsvetkova. Institute of Microelectronics and Informatics, Russian Academy of Sciences, Yaroslavl, Russia.
P1-61	Structural Transition in Amorphous Silicon Deposited by Low Frequency Discharge. A. A. Popov1, A. E. Berdnikov1, V. D. Chernomordik1, Yu. A. Munakov1, M. D. Efremov2, V. A. Volodin2. 1. Institute of Microelectronics and Informatics RAS, Yaroslal, Russia; 2. Institute of Semiconductors Physics, Siberian Branch of RAS, Novosibirsk, Russia.
P1-62	Nb epitaxy at the time of low-energy ion bombardment conditions. V. V. Naumov, V. F. Bochkarev, A. A. Goryachev, A. S. Kunitsyn, E. I. Ilyashenko, P. E. Goa, T. H. Iohansen. 1. Institute of Microelectronics and Computer Science, RAS, Yaroslavl, Russia; 2. University of. Oslo, Norway.
P1-63	Contact systems for sub-100 nm CMOS technology. I. A. Horin 1, A. A. Orlikovsky1, A. G. Vasiliev 1,2, A. L. Vasiliev 3,4. 1. Institute of Physics & Technology (IPT), Russian Academy of Sciences, Moscow, Russia; 2. Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Moscow, Russia; 3. Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia; 4. Department of Metallurgy and Materials Eng., Institute of Materials Science, Unit 3136, University of Connecticut, Storrs, USA.
P1-64	The polyimides photoresist for multilevel- interconnect VLSI technology. N. Savinski. Laboratory of Molecular Electronics, Institute of Microelectronics and Informatics of RAS, Yaroslavl, Russia.
P1-65	Epitaxial erbium silicide contact to silicon-germanium. Zs. J. Horvath 1, G. Molnar1, G. Peto 1, I. Dezsi 2, R. Loo 3, M. Caymax 3, K. Z’d’ansky 4. 1. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest 114, Hungary; 2. KFKI Research Institute for Particle and Nuclear Physics of the Hungarian Academy of Sciences, Budapest 114, Hungary; 3. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium; 4. Institute of Radio Engineering and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, Prague 8, 18251, Czech Republic.
P1-66	Electrical behaviour of Al/Si and Al/SiGe junctions: Effect of surface treatment. Zs. J. Horvath 1, L. K. Orlov 2, M. Adam 1, A. V. Potapov 2, I. Szabo 1, V. A. Tolomasov 2, B. Cvikl 3, Yu. M. Ivanov 4, D. Korosak 3, E. Pashaev 4. 1. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, Hungary; 2. Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia; 3. Faculty of Civil Engineering, University of Maribor, Maribor, Slovenia, and J. Stefan Institute,Ljubljana, Slovenia; 4. Institute of Crystallograhpy, RAS, Moscow, Russia.
P1-67	Modeling diffusion of ion implanted impurity in crystalline silicon under a temperature gradient. V. Rudakov, V. Ovcharov, A. Bashmakov. Institute of Microelectronics and Informatics, Russian Academy of Sciences, Yaroslavl, Russia.
P1-68	Modeling of Phosphorous Diffusion in Ion-Implanted Si in Condition of Dopant Transient Enhanced Out-Diffusion at Vacuum Rapid Thermal Annealing. V. Kagadei 1, A. Markov 2, D. Proskurovsky 2. 1. Research Institute of Semiconductor Devices, Tomsk, Russia; 2. Institute of High Current Electronics, Tomsk, Russia.
P1-69	Precision studies of semiconductor superlattices by X-Ray diagnostic methods. E. Pashaev 1, S. Yakunin 1, A. Zaitsev 2. 1. Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia; 2. Moscow Institute of Radio Engineering and Automatics, Moscow, Russia.
P1-70	Determining the surface electrostatic potential ?s of a dielectric bordering semiconductor using the method of ? ‘s (?s)-diagrams. G. V. Chucheva, N. F. Kukharskaya, A. G. Zhdan. The Institute of Radio Engineering and Electronics, RAS, Moscow, Russia.

October 9th. 2003

Poster session II
Entresol

P2-71	Fabrication of 3D photonics structures. S. Zaitsev, M. Knyazev, S. Dubonos. Institute of Microelectronics Technology, RAS, Chernogolovka, Russia.
P2-72	Quality of silicon macropores produced by deep anodic etching (DAE) depending on silicon wafer resistivity and parameters of the DAE procedure. V. V. Starkov, E. Yu. Gavrilin, A. F. Vyatkin, S. V. Dubonos, and M. A. Knyasev. Institute of Microelectronics Technology, RAS, Moscow district, Chernogolovka, Russia.
P2-73	Investigation of a nucleation stage of macropore formation in p-type silicon. V. V. Starkov, E. Yu. Gavrilin, A. F. Vyatkin. Institute of Microelectronics Technology, Russian Academy of Sciences, Moscow district, Chernogolovka, Russia.
P2-74	Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxial stressed silicon plate. V. V. Starkov1, E. Yu. Gavrilin1, A. F. Vyatkin1, V. I. Emel’yanov2, and K. I. Eremin2. 1. Institute of Microelectronics Technology, RAS, Moscow — Chernogolovka, Russia, 2. International Laser Center, Lomonosov Moscow State University, Moscow, Russia
P2-75	Porous anodic alumina for photonics and optoelectronics. S. Gavrilov 1, D. Kravtchenko 1, A. Zheleznyakova 1, V. Timoshenko 2, P. Kashkarov 2, V. Melnikov2, G. Zaitsev 2, L. Golovan 2. 1. Moscow Institute of Electronic Technology, Moscow, Russia; 2. Physics Department, M.V. Lomonosov Moscow State University, Moscow, Russia.
P2-76	Study on interaction of organic luminophors with the modified porous alumina. G. Gorokh 1, A. Kukhta 2, Yu. Koshin 1, D. Solovei 1, A. Poznyak 1, A. Mozalev. 1. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus; 2. Institute of Molecular and Atomic Physics, Minsk, Belarus.
P2-77	Design and manufacturing of passive — matrix for organic light-emitting micro display. M. Gitlin, N. Savinski, K. Truhanov, M. Kachalov, E. Savinskaya. Laboratory of Molecular Electronics, Institute of Microelectronics and Informatics of RAS, Yaroslavl, Russia.
P2-78	The strain distribution in Si lattice of the layer containing в -FeSi2 precipitates. A. Borun, N. Khmelnitskaja, Yu. Parkhomenko, E. Vygovskaja. The Moscow institute of steel and alloys, Moscow, Russia.
P2-79	Residual Photoresist Removal from Si and GaAs Surface by Atomic Hydrogen Flow Treatment. E. Anischenko 1, V. Diamant 2, V. Kagadei 1, E. Nefeyodtsev 3, K. Oskomov 3, D. Proskurovsky 3, S. Romanenko 3. 1. Research Institute of Semiconductor Devices, Tomsk, Russia; 2. Atomic Hydrogen Technologies, Katzrin, Israel; 3. Institute of High Current Electronics, Tomsk, Russia.
P2-80	Structural characterization of undoped and Si-doped AlGaAs/GaAs double quantum wells separated by a thin AlAs layer. A. Lomov 1, M. Chuev 2, G. Galiev 3, E. Klimov 3, A. Cherechukin 3. 1. A.V. Shubnikov Institute of Crystallography, RAS, Moscow, Russia; 2. Institute of Physics & Technology of RAS, Moscow, Russia; 3. Institute of UHF Semiconductor Electronics of RAS, Moscow, Russia.
P2-81	CANCELLED!
P2-82	Formation of multilayer Co/Cu and Ni/Cu structures by magnetron sputtering and electron-beam evaporation. I. A. Horin1, V.F. Meshcheryakov2, A. A. Orlikovsky1, K. V. Timonin3, A. G. Vasiliev1,2. 1. Institute of Physics & Technology (IPT), RAS, Moscow, Russia; 2. Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Moscow, Russia; 3. Institute of Crystallography, RAS, Moscow, Russia.
P2-83	Tilted-axes YBCO thin films: from vicinal range to step bunching. P. B. Mozhaev 1,2, J. E. Mozhaeva 1,2, C. S. Jacobsen2, J. B. Hansen2, I. K. Bdikin3, T. Donchev4, E. Mateev4, T. Nurgaliev4, S. A. Zhgoon5, A. E. Barinov5. 1. Institute of Physics and Technology, RAS, Moscow, Russia, 2. Technical University of Denmark, Physics Dept., Lyngby, Denmark,3. Dept. of Ceramic and Glass Engineering, CICECO, University of Aveiro, Aveiro, Portugal 4. Institute of Electronics Bulgarian Academy of Sciences, Sofia, Bulgaria 5. Moscow Power Engineering Institute, Moscow, Russia
P2-84	Photoluminescence spectroscopy of quantum well GaAs/InGaAs/GaAs in electrical field. Yu. V. Khabarov, L. E. Velikovsky. Institute of UHF Semiconductor Electronics, Russian Academy of Sciences, Moscow, Russia.
P2-85	Submicron probes for Hall magnetometry over the extended temperature range from helium to room temperatures. S. V. Morozov 1, S. V. Dubonos 1, K. S. Novoselov1,2, A. K. Geim 2. 1. Institute of Microelectronics Technology and High Purity Material, RAS, Chernogolovka, Russia; 2. University of Manchester, Manchester, UK.
P2-86	Argon-oxygen ion-plasma treatment modifies photoluminescence spectrum of porous silicon. B. M. Kostishko, S. J. Salomatin. Ul’yanovsk State University, Ul’yanovsk, Russia.
P2-87	Method of electrophysical parameters determination in semiconductors by means of microstripe resonator. V. V. Sidorin, A. V. Sidorin. Moscow State Institute of Radioenginiriing, Electronics and Automation (Technical University) MIREA, Moscow, Russia.
P2-88	Modeling Atomic Hydrogen Diffusion in GaAs. V. Kagadei 1, E. Nefyodtsev 2. 1. Research Institute of Semiconductor Devices, Tomsk, Russia; 2. Institute of High Current Electronics, Tomsk, Russia.
P2-89	Dry Cleaning of Fluorocarbon Residues by Atomic Hydrogen Flow. E. Anischenko 1, V. Diamant 2, V. Kagadei 1, E. Nefyodtsev 3, D. Proskurovsky 3, S. Romanenko 3. 1. Research Institute of Semiconductor Devices, Tomsk, Russia; 2. Atomic Hydrogen Technologies, Katzrin, Israel; 3. Institute of High Current Electronics, Tomsk, Russia.
P2-90	Application of Atomic Hydrogen Treatment in Si and GaAs Based Devices Technology. V. Kagadei 1, E. Nefyodtsev 2, D. Proskurovsky 2, S. Romanenko 2. 1. Research Institute of Semiconductor Devices, Tomsk, Russia; 2. Institute of High Current Electronics, Tomsk, Russia.
P2-91	F+, B+ ion implantation into GaAs multilayer heterostructures. M. Tigishvili, N. Gapishvili, R. Melkadze, M. Ksaverieva, T. Khelashvili. Research & Production Complex (RPC) » Electron Technology» of Tbilisi State University, Tbilisi Georgia.
P2-92	DD-PHEMT structures and technology on GaAs for power amplification in up to millimeter wave range. V. G. Mokerov 1, A. S. Bugayev 1, Yu. V. Fedorov 1, M. Yu. Scherbakova 1, A. P. Senichkin 1, A. T. Grigoriev 1, E. N. Enyushkina 1, L. E. Velikovskii 1, G. Z. Garber 2, A. M. Zubkov 2, Yu. A. Matveyev 2. 1. Institute of Ultra High Frequency Semiconductor Electronics of RAS (IUHFSE RAS), Moscow, Russia; 2. Science Research Institute «Pulsar», Moscow, Russia
P2-93	InAlAs/InGaAs isomorphic HEMT’s with cut off frequency ft>100GHz for mm-wave applications. V. G. Mokerov, Yu. V. Fedorov, A. S. Bugaev, M. Yu. Scherbakova, A. T. Grigoriev, E. N. Enyushkina. 1. Institute of Ultra High Frequency Semiconductor Electronics of RAS (IUHFSE RAS) Moscow,Russia.
P2-94	Structure Peculiarities of Metallic Films Produced by Selective Removal of Atoms. B. Gurovich, A. Domantovsky, K. Maslakov, E. Olshansky, K. Prikhodko. Russian Research Center «Kurchatov Institute», Moscow, Russia.
P2-95	Logic gates based on resonant-tunneling diodes. A. Gorbatsevich 1, I. Kazakov 2, M. Kirillov 1, B. Nalbandov 1, S. Schmelev 1, A. Tsibizov 2. 1. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia; 2. P.N. Lebedev Physical Institute, RAS, Moscow, Russia.
P2-96	CANCELLED!
P2-97	Liquid phase epitaxial growth and optical properties of InxGa1-xAsySb1-y on GaSb B. Podor, V. Rakovics, J. Balazs, A. L. Toth. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, Hungary.
P2-98	Design of P-HEMT-MMIC chipset for X-band active phased array radar. V. G. Mokerov, B. G. Nalbandov, E. N. Ovcharenko, T. I. Kuznetzova, D. L. Gnatyuk, A. S. Bugaev, Yu. V. Fedorov. Institute of UHF Semiconductor Electronics of RAS, Moscow, Russia.
P2-99	Au electrical contacts to GaSb based epitaxial structures. Zs. J. Horvath, V. Rakovics, B. Podor. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest 114, Hungary.
P2-100	The process of low-temperature diffusion in production of the semiconductor devices. A. Bibilashvili, Z. Bokhochadze, A. Gerasimov, N. Gochaleishvili, R. Kazarov, I. Lomidze, E. Maziashvili, S. Sikharulidze. Microelectronics chair of Tbilisi State University, Tbilisi, Georgia.
P2-101	Elaboration of gallium arsenide technology in Georgia for development of microelectronic devices. N. Khuchua 1, Z. Chakhnakia 1, L. Khvedelidze 1, R. Melkadze 1, A. Tutunjan 1, R. Diehl 2. 1. Research and Production Complex (RPC) «Electron Technology» of I.Javakhishvili Tbilisi State University, Tbilisi, Georgia; 2. III-V Electronics and Optoelectronics Hardheim, Germany.
P2-102	Spatially-Ingomogeneous Effects at the Interference of Electron Waves in Semiconductor 1D Nanostructures. V. A. Petrov and A. V. Nikitin
P2-103	Optimization of double barrier doped heterostructures lGaAs/GaAs/AlGaAs/GaAs for ultra high frequency FET. G. Galiev 1, V. Kaminskii 1, V. Kul’bachinskii 2. 1. Institute of UHF semiconductor electronics, RAS, Moscow, Russia; 2. Moscow State University, Moscow, Russia.
P2-104	Electronic band structure and semimetal-semiconductor transition in InAs/GaSb quantum wells. I. Lapushkin 1, A. Zakharova 1, S. T. Yen 2, K. A. Chao 3. 1. Institute of Physics and Technology of RAS, Moscow; 2. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China 3. Department of Physics, Lund University, Lund, Sweden.
P2-105	The influence of classical and quantum-mechanical regions interaction on IV-characteristics of RTD, based on different materials. I. I. Abramov, I. A. Goncharenko, N. V. Kolomejtseva. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.
P2-106	Room temperature photoreflectance investigation of undoped and doped GaAs/AlGaAs quantum well structures. L. P. Avakyants 1, P. Yu. Bokov 1, A. V. Chervyakov 1, G. B. Galiev 2, E. A. Klimov 2. 1. Physics faculty of M.V. Lomonosov Moscow State University, Moscow, Russia; 2. Institute of UHF Semiconductor Electronics RAS, Moscow, Russia.
P2-107	Negative magnetoresistance due to electron-electron interaction in InGaAs/InP heterostructures. B. Podor 1,2, I. G. Savel`ev 3, Gy. Kovacs 4, G. Remenyi 5. 1. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, Hungary; 2. Budapest Polytechnic, Kando Kalman Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Budapest, Hungary; 3. A. F. Ioffe Physical Technical Institute, RAS, St. Petersburg, Russia; 4. Department of General Physics, Eotvos Lorand University, Budapest, Hungary; 5. CNRS Centre de Recherches sur les Tres Basses Temperatures et Laboratoire des Champs Magnetiques Intenses, Grenoble, France.
P2-108	Influence of a transversal electric field to acoustic charge transport in the GaAs heterostructures. V. I. Еgоrкin, А. К. Моrоchа. Moscow Institute of Electronic Technology, Moscow, Russia.
P2-109	Spin-dependent tunneling through a symmetric barrier structure with buried electrical polarization. V. Kantser, I. Bejenari, G. Birliba. LISES Institute of Applied Physics ASM, Kishinev, Moldova.
P2-110	Change of a resistance and real structure under x-ray irradiation. V. Peregudov 1, V. Kirikov 2, E. Pashaev 2, S. Yakunin 2, A. Zaitsev 3, S. Tikhomirov2. 1. RRC «Kurchatov Institute», Moscow, Russia; 2. Institute of Crystallography, RAS, Moscow, Russia; 3. Moscow Institute of Radio Engineering and Automatics, Moscow, Russia.
P2-111	Uncooled microbolometer based on microbridge structure technology. Yu. Chetverov2, S. Shapoval1. 1. Institute of Microelectronics Technology RAS, Chernogolovka, Russia; 2. R&D Corporation «Tsiklon», Moscow, Russia.
P2-112	An investigation of relative current sensitivity of bipolar magnetotransistor. R. D. Tikhonov. SMC «Technological Centre» at the MSIEE, Moscow, Russia.
P2-113	Numerical simulation of piezoresistive effect by ISE TCAD tools for microsystems engineering elements. T. Kroupkina1, O. Pankratov2, V. Amelichev2. 1. Moscow Institute of Electronic Engineering, Moscow, Russia; 2. SMC «Technological Center» Moscow, Russia.
P2-114	Statistical Modeling for IC Manufacture: Hierarchical Approach. Yu. I. Bogdanov 1, N. A. Bogdanova 2 1. OAO Angstrem, Moscow, Russia 2. Moscow Institute of Electronic Engineering (Technical University), Moscow, Russia
P2-115	The optimization of relative current sensitivity of bipolar magnetotransistor. A. Kozlov1, M. Reveleva1, R. Tikhonov2. 1. Moscow State Institute of Electronic Technology (Technical University), Moscow, Russia; 2. SMC «Technological Center» at the MSIEE, Moscow, Russia.
P2-116	Investigation of the pressure influence on the characteristics of the silicon micromechanical oscillator. S. Timoshenkov, A. Boiko, V. Shilov, V. Rubchic. Moscow Institute of Electronic Engineering (Technical University), Moscow, Russia.
P2-117	Microtechnologies & MEMS projects. E. N. Pyatishev, Y. Akulshin, A. Kazakin, M. Lurie. St. Petersburg State Polytechnical University, St. Petersburg, Russia.
P2-118	To theory of electrophysical modification of microelectronic devices. V. M. Bogomol’nyi. Moscow State University of Service. Cherkizovo. Russia.
P2-119	Fast switching high-voltage gallium arsenide devices. A. Rozhkov, V. Kozlov. Ioffe Physico-Technical Institute RAS, St. Petersburg, Russia
P2-120	Phonon-induced decoherence of solid state charge-based quantum computer. L. Fedichkin 1, A. Fedorov 2, M. Yanchenko 3. 1. Center for Quantum Device Technology, Department of Physics and Department of Electrical and Computer Engineering, Clarkson University, Potsdam, NY, USA. 2. Department of Physics, Clarkson University, Potsdam, NY, USA. 3. Institute of Physics and Technology, RAS, Moscow, Russia.
P2-121	Microscale regulation of quantum fluctuations of light at nonlinear selective reflection. Ja. Fofanov. Institute for Analytical Instrumentation, RAS, St. Petersburg, Russia.
P2-122	Noise detector on base of a system of asymmetric loops with the persistent current. V. V. Aristov, S. V. Dubonos, V. I. Kuznetsov, A. A. Firsov, A. V. Nikulov, I. N. Zhilyaev. Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia.
P2-123	Phase response of spin-dependent single-hole tunneling in silicon one-dimensional rings. N. T. Bagraev1, A. D. Bouravleuv1, W. Gehlhoff2, L. E. Klyachkin1, A. M. Malyarenko1, I. A. Shelykh3. 1. A. F. Ioffe Physico-Technical Institute, St.Petersburg, Russia; 2. Technische Universitat Berlin, Institut fur Festkorperphysik, Berlin, Germany; 3. St.Petersburg State Technical University, St.Petersburg, Russia.
P2-124	Surface scattering in giant- magnetoresistance multilayered structures. V. V. V’yurkov, S. D. Ananiev, A. A. Orlikovsky. Institute of Physics and Technology of the RAS, Moscow, Russia.
P2-125	Structure of Nano-Cavities by Magnetic Resonance Methods. E. B. Fel’dman, M. G. Rudavets. Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia.
P2-126	About parallel computing on spatial rotations in spin mesomorphic structures. M. M. Nesterov, V. I. Tarkhanov. 1. St.Petersburg Institute of Informatics and Automation, RAS, St. Petersburg, Russia; 2. St. Petersburg State Polytechnical University, St. Petersburg, Russia.
P2-127	Quantum States Estimation: Root Approach. Yu. I. Bogdanov. OAO «Angstrem», Moscow, Russia.
P2-128	CANCELLED!
P2-129	The scanning single ion implanter for solid-state quantum computer. V. Zhukov. Institute for Informatics and Automation, RAS, Saint-Petersburg, Russia.
P2-130	Regularities of power consumption in quasiadiabatic logical gates. V. Staroselsky, V. Losev. Moscow State Institute of Electronic Engineering, Moscow, Russia.
P2-131	About application of logic opportunities of electron-hole plasma in the information — computing technologies. H. Karayan, A. Makaryan, G. Nikogosyan. Yerevan State University, Yerevan, Armenia.
P2-132	Physical calculations and computers. H. Karayan, Sh. Martirosyan, H. Vardanyan. Yerevan State University, Yerevan, Armenia.
P2-133	Correlation Characteristics in Multilevel Clustering Fault Model. Yu. I. Bogdanov 1, N. A. Bogdanova 2, A. V. Rudnev 1. 1. OAO Angstrem, Moscow, Russia; 2. Moscow Institute of Electronic Engineering (Technical University), Moscow, Russia.
P2-134	The tools for numerical «renascence» procedure of electrical and processes parameters of complex devices of the integrated circuits. I. I. Abramov1, V. A. Dobrushkin 2, V. A. Tsurko 3, V. A. Zhuk 4. 1. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus; 2. Brown University, Providence, USA; 3. National Academy of Scienses, Institute of Mathematics, Minsk, Belarus; 4. Silvaco Data Systems Inc., Santa Clara, USA.
P2-135	Silicone elastoplastics for microsystem engineering. P. A. Averichkin, V. A. Kalnov, A. A. Shlionsky. FGUP «GIREDMET», Moscow, Russia. Institute of Physics and Technology, RAS, Moscow, Russia
P2-136	Quartz surface carbonilization. P. A. Averichkin, V. A. Kalnov, A. A. Shlionsky, N. I. Shmatov. FGUP «GIREDMET», Moscow, Russia. Institute of Physics and Technology, RAS, Moscow, Russia