Информация о IC MNE 2007 и QI 2007 — Стендовые доклады

Стендовые доклады | Устные доклады 

 

ICMNE-2007 AND SYMPOSIUM QI-2007 SCIENTIFIC PROGRAM

(Final Edition)
(Posters)

Download files:
ICMNE-2007 Oral Presentations
ICMNE-2007 Posters
ICMNE-2007 Delayed Posters
QI-2007 Oral Presentations

 

October 3th. 2007

Poster session I
Entresol

Sub-100 nm Lithography

 
P1 — 01
A plane wave diffraction on a pin-hole in a film with a finite thickness and real electrodynamic properties. N. Chkhalo, I.  Dorofeyev, N. Salashchenko, M. Toropov Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P1 — 02
A new source of a reference spherical wave for a point diffraction interferometer. N. Chkhalo, A. Klimov, D. Raskin, V. Rogov, N. Salashchenko. Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P1 — 03
Correction of the EUV mirror substrate shape by ion beam. N. Chkhalo, L. Paramonov, A. Pestov, D. Raskin, N. Salashchenko. Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P1 — 04
Investigation of fluorescence on wavelength 13.5 nm of x-ray tube for nanolithograther. N. Chkhalo, I. Zabrodin, I.  Kas’kov, E. Kluenkov, A. Pestov, N. Salashchenko. Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P1 — 05
Well-ordered nanostructures fabricated using nanosphere lithography. A.A. Grunin, V.V. Moskalenko, I.V. Soboleva, A.A. Ezhov and A.A. Fedyanin. Faculty of Physics, M.V.Lomonosov Moscow State University , Moscow , Russia
P1 — 06
Mask Image Formation by Electron Beam Deposition from Vapour Phase. M.A. Bruk 1 , E.N. Zhikharev 2 , S.L. Shevchuk 2 , I.A. Volegova 1 , A.V. Spirin 1 , E.N. Teleshov 1 , V.A. Kalnov 2 , Yu.P. Maishev 2 . 1. Karpov Institute of Physical Chemistry, Moscow , Russia . 2. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia

Nanodevices and Nanostructures

P1 — 07
Electron Transition Along а n Atomic Chain. K.K. Satarin, I.K. Gainullin, I.F. Urazgildin. M.V. Lomonosov Moscow State University , Department of Physics, Moscow , Russia
P1 — 08
One-Dimentional Heterojunctions with Oriented Carbon Layers. N.D. Novikov, M.B. Guseva, V.G. Babaev, V.V. Khvostov. Department of Physics, Moscow State University , Moscow , Russia
P1 — 09
Ultrafast particle probability transfer in quantum chains. A.A. Gorbatsevich, M.A. Panteleev . Moscow Institute of Electronic Technology ( Technical University ), Moscow , Russia
P1 — 10
Correlation mechanism of negative differential resistance in molecular wire. Yu. B. Kudasov. Russian Federal Nuclear Center – VNIIEF, Sarov, Nizhni Novgorod region, Russia
P1 — 11
Effects of spatial reproduction at the interference of the electron waves in semiconductor 1D nanostructures with parabolic quantum wells. V.A. Petrov PP PP , A.V. Nikitin. Institute of Radio Engineering and Electronics, RAS, Moscow , Russia
P1 — 12
Macroscopic quantum oscillator in a two-dimensional conductor. I. Zhilyaev. Institute of Microelectronics Technology and High-Purity Materials, RAS, Chernogolovka, Moscow Region , Russia
P1 — 13
The Bohr’s quantization in nanostructures. A.V. Nikulov. Institute of Microelectronics Technology, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District , Russia
P1 — 14
Non-volatile electrically reprogrammable memory matrix on self-forming conducting nanostructures with an integrated transistor electric decoupling of cells. V. Mordvintsev, S. Kudryavtsev V. Levin, L. Tsvetkova. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia
P1 — 15
Intersubband optical transitions in InAs/GaSb broken-gap quantum wells. I. Semenikhin 1 , A. Zakharova 1 , K. Nilsson 2 , K. A. Chao 2 . 1.  Institute of Physics and Technology, RAS, Moscow , Russia .  Department of Physics, Lund University , Sweden
P1 — 16
Plasma oscillations in two-dimensional electron-hole systems. S.A.  Moskalenko 1 , M.A. Liberman 2 , E.V. Dumanov 1 , A.G. Stefan 1 and M.I. Shmiglyuk 1 . 1. Institute of Applied Physics of the Academy of Sciences of Moldova , Chisinau, Republic of Moldova 2. Departmant of Physics, Uppsala University , Uppsala , Sweden
P1 — 17
On the melting and crystallization of -dimensional nanostructures. M. N. Magomedov. Institute for Geothermal Problems, Daghestan Scientific Center of the Russian Academy of Sciences , Makhachkala , Russia

Photonics and Optoelectronics

P1 — 18
Two-dimentional photonic crystals for creating Mach-Zehnder micro-interferometers. A.V. Chetvertukhin 1 , A.A. Ezhov 1 , A.V. Shobukhov 2 , E.D. Mishina 3 , A.A. Zaitsev 3 , A.S. Sigov 3 , A.A. Fedyanin 1 . 1.Faculty of Physics, Lomonosov Moscow State University , Moscow , Russia . 2.Faculty of Comp. Math. & Cyber., Lomonosov Moscow State University , Moscow , Russia . 3.Moscow Institute of Radioengineering, Electronics and Automation, Moscow , Russia
P1 — 19
Optical properties of subwavelength metal nanostructures. E. Virchenko, A. Zaitsev, V. Valdner. Moscow State Institute of Radioengineering Electronics and Automation, Moscow , Russia
P1 — 20
Plasmonic Chiral Nanostructures with Extraordinary Optical Transmission. M.R. Shcherbakov 1 , P.P. Vabishchevich 1 , A.A. Zaitsev 2 , A.S. Sigov 2 , V.O. Valdner 2 , A.A. Fedyanin 1 . 1. Faculty of Physics, Lomonosov Moscow State University , Moscow , Russia . 2. Moscow Institute of Radioengineering, Electronics and Automation, Moscow , Russia
P1 — 21
Surface electromagnetic waves in one-dimensional photonic crystals. E.M. Murchikova , M.D. Khokhlova, I.V. Soboleva and A.A. Fedyanin. Faculty of Physics, M.V. Lomonosov Moscow State University , Moscow
P1 — 22
Symmetric Difference Scheme for Two-Dimensional Photonic Crystal Modeling. A.V. Shobukhov 1 , A.A. Fedyanin 2 . 1.  Faculty of Comp. Math. & Cyber., Lomonosov Moscow State University , Moscow , Russia . 2. Faculty of Physics, Lomonosov Moscow State University , Moscow , Russia
P1 — 23
Micro-scale domain structure formation by e-beam point writing on the Y cut surfaces of LiTaO 3 crystals. L.S.Kokhanchik , D.V.Punegov. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Siences , Chernogolovka , Russia
P1 — 24
Single Photon Current Impulses Statistics of the Small Square Silicon Avalanche Photodiodes in Geiger’s Mode. I.V. Vanyushin 2 , A.V. Verhovtseva 2 , A.V. Gergel’ 1 , N.M. Gorshkova 1 , V.M. Gontar` 2 , V.A. Zimoglyad 2 , Yu.I. Tishin 2 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow , Russia.2. LCC “Unique IC`s”, Moscow Russia
P1 — 25
Silicon avalanche photodiodes for particle detection. I.B. Chistokhin 1 , O.P. Pchelyakov 1 , E.G. Tishkovsky 1 , V.I. Obodnikov 1 , V.V. Maksimov 2 , A.A. Ivanov 2 , E. Gramch 3 1. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia . 2. Budker Institute of Nuclear Physics, Russian Academy of Sciences, Novosibirsk , Russi . 3. Dept. Fisica, Universidad de Santiago, Santiago, Chile
P1 — 26
Electro-optical optimization of p-contact to raise efficiency of light -emitting diodes. S. Shapoval, M.Yu. Barabanenkov, V. Sirotkin, L. Saptsova, A. Kovalchuk, V. Zemlyakov * , N. Antonova * , A. Tsasulnikov † , W. Lundin † , E. Zavarin † , A. Sakharov † , V. Ustinov † . Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia . * R&D Corporation «Istok», Fryazino, Moscow region, Russia . † Ioffe Physico-Technical Institute RAS, St. Petersburg , Russia

Devices and ICs

P1 — 27
Radiation Induced Leakage Due to Stochastic Charge Trapping in Isolation Layers of Nanoscale MOSFETs. G.I. Zebrev, M. S. Gorbunov, V.  S. Pershenkov . Department of Microelectronics, Moscow Engineering Physics Institute, Russia
P1 — 28
Role of Parasitic Bipolar Effect in Modern Partially Depleted SOI CMOS Technologies. V.E. Shunkov 1 , M.S. Gorbunov 1 , G.I. Zebrev 1 , B.V. Vasilegin 2 1.   Department of Microelectronics, Moscow Engineering Physics Institute, Russia 2. Science Research Institute for System Study, Russian Academy of Science , Moscow , Russia
P1 — 29
Accelerator Based Facility for Characterization of Single Event Upsets (SEU) and Latchups (SEL) in Digital Electronic Components. V.S. Anashin 1 , V.V. Emelyanov 2 , G.I. Zebrev 3 , I.O. Ishutin 1,3 , N.V. Kuznetsov 4 , B.Yu. Sharkov 5 , Yu.A. Titarenko 5 , V.F. Batyaev 5 , S.P. Borovlev 5 1. SpaceDevice Engineeing Institute, Federal Space Agency, Moscow , Russia . 2. Research Institute of Scientific Instruments, Lytkarino , Russia . 3. Department of Microelectronics, Moscow Engneering Physics Institute, Russia . 4.  Institute of Nuclear Physics , Moscow State University , Russia . 5. Institute of Theoretical and Experimental Physics, Moscow , Russia
P1 — 30
5W/mm Gallium Nitride Power HEMT. A. Vasiliev, A. Dorofeev, Yu. Kolkovsky, V. Minnebaev. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
P1 — 31
Research of the disbalance mechanism of dual collector lateral bipolar magnetotransistor. R.D. Tikhonov 1 , S.A.  Polomoshnov 1 , A.V. Kozlov 2 , A.Ju. Krasukov 2 . 1. SMC «Technological Centre» MIEE, Moscow , Zelenograd , Russia . 2. MIET, Moscow , Russia
P1 — 32
The analysis of mismatch of physical and technical parameters of semiconductor devices. N. Zaitsev 1 , Y. Brukhova 1 . 1. Moscow Institute of Electronic Technology, Technical University , Moscow , Russia
P1 — 33
High Efficiency Carbon Fiber Cold Cathode Babaev V.G., Khvostov V.V., Guseva M.B., Savchenko N.F., Belokoneva Yu.G. Department of Physics, Moscow State University , Moscow , Russia
P1 — 34
Multicathode vacuum nanotriode as possible switch for integrated circuits of vacuum nanoelectronics. V.A. Zhukov Institute for Informatics and Automation, Russian Academy of Sciences , St. Petersburg , Russia
P1 — 35
Portable fuel cells with micro channel silicon application. V.V. Grinko, N.V. Lapin, A.F. Vyatkin. Institute of Microelectronics Technology RAS, Chernogolovka, Moscow District , Russia
P1 — 36
Technology covering solder past with high resolution. Soldering defects. Timoshenkov S.P., Antonov М.А., Seregin А.V. Institute of Electronic Technology, Moscow , Russia

Thin Films and Nanostructure Technologies I

P1 — 37
Molecular-beam epitaxy of ultrathin Si films on sapphire. Pavlov D.A., Shilyaev P.A., Korotkov E.V., Treushnikov M.V. University of Nizhny Novgorod, Nizhny Novgorod, Russia
P1 — 38
Research and development of technological processes of silicon on insulator structures manufacturing. V. Kalugin, S. Timoshenkov, Yu. Chaplygin. Moscow Institute of Electronic Technology ( Technical University ), Moscow , Russia
P1 — 39
Laser Plasma Deposition of thin ZnO films, doped by nitrogen. O.A. Novodvorsky 1 , V.Ya. Panchenko 1 , O.D. Khramova 1 , L.S. Gorbatenko 1 , Ye.A. Cherebilo 1 , G.A. Batishev 1 , C. Wenzel 2 , J.W. Bartha 2 , H. Hiemann 2 , V.T. Bublik 3 , K.D. Chtcherbatchev 3 . 1 Institute on Laser and Information Technologies, Russian Academy of Sciences , Shatura, Moscow Region , Russia . 2 Institute of Semiconductor and Microsystems Technology, University of Technology , Dresden , Germany . 3 Moscow State Institute of Steel and Alloys (TU), Moscow , Russia
P1 — 40
TEM Study of BST Thin Films. O. Zhigalina 1 , K. Vorotilov 2 , A. Sigov 2 , I.  Androsov 2 . 1.   Institute of Crystallography , RAS, Moscow , Russia . 2. State Institute of Radioengineering, Electronics and Automation ( Technical University ), Moscow , Russia
P1 — 41
Films with Regulated Optical and Electrophysical Parameters. A. Akinin 1 ,V. Chernokogin 1 ,Y. Kontsevoy 1 , E. Mitrofanov 2 , V. Pheophilaktov 1 , S. Simakin 2 1. Federal State Unitary Enterprise ‘SPE ‘Pulsar’, Moscow , Russia . 2.  Federal State Unitary Enterprise ‘Scientific Research Institute of Vacuum Technique named after S.A.Vekshinsky’, Moscow , Russia
P1 — 42
Technology of Multilayer Metallic Thin Films Formation by Electrochemical Deposition Method E.Yu. Buchin, E.V. Vaganova, A.V. Prokaznikov . Institute of Physics & Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
P1 — 43
Studying of the structure of chemical bonds of matrix diamond-like silicon-carbon nanocomposites. A.M. Dodonov, E.A. Skryleva, I.V. Gontar, M.D. Malinkovich, Y.N. Parkhomenko, M.L. Shupegin, A.P. Smirnov. Moscow Institute of Steel and Alloys (Technological university), Moscow , Russia
P1 — 44
T he method of thin metal films adhesion increasing for the lowered dimensions structures. N.L. Kazansky 1 , V.A. Kolpakov 2 , V.D. Paranin 2 , M.S. Polikarpov 2 . 1.  Image Processing Systems Institute, Russian Academy of Science, Samara , Russia . 2. Samara State Aerospace University named after S.P. Korolyov, Samara, Russia
P1 — 45
Influence of vacancy clusters on the adhesion properties of interfaces. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 2 . 1. Institute for Problems in Mechanics, RAS, Russia 2. Institute of Physics and Technology, RAS, Russia
P1 — 46
Influence of nanoobjects ( porous and inclusions ) on properties of interfaces of the bonding silicon wafers used for manufacturing of multilayered structures and mems. 1 Timoshenkov S.P., 1 Britkov O.M., 2 Grafutin V.I., 2 Funtikov Yu.V., 1 Kalugin V.V., 1,2 Svetlov-Prokop’ev E.P., 1 Zaluzhnyi A.G. 1 Moscow Institute of Electronic Technology (Technical University), Zelenograd, Moscow, Russia. 2 «State Science Centre of the Russian Federation — A.I.Alikhanov Institute for theoretical and experimental physics» , Moscow , Russia

Superconducting Structures

P1 — 47
Epitaxial growth of YBCO thin films with unusual orientation. P.B. Mozhaev 1 , J.E. Mozhaeva 1 , J. Bindslev Hansen 2 , C.S. Jacobsen 2 , I.M. Kotelyanskii 3 , V.A. Lusanov 3 . 1.  Institute of Physics and Technology, RAS, Moscow , Russia . 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark . 3.  Institute of Radio Engineering and Electronics, RAS, Moscow , Russia
P1 — 48
About possibility of use of tunnel junctions as sensors of current states of mesoscopic superconducting structure. I. Zhilyaev. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow Region , Russia
P1 — 49
Consistent microscopic theory for kinetic – inductance detectors. A.Semenov 1 , I. Devyatov 2 . 1. Moscow Pedagogical State University , Moscow , Russia . 2. Lomonosov Moscow State University, Skobelitsyn Institute of Nuclear Physics, Moscow , Russia
P1 — 50
Single Flux Quantum Pulse Amplifier. V. K. Kornev 1 , I.   I.  Soloviev 1 , N. V. Klenov 1 , and O. A. Mukhanov 2 . 1. Department of Physics, Moscow State University , Moscow , Russia . 2. HYPRES, Inc., Elmsford , NY , USA

Defects and Impurities in Semiconductors

P1 — 51
SIMS application for manganese clusters detection in silicon. A. Trifonov, V. Saraykin. Scientific Research Institute of Physical Problems named after F.V.Lukin, Moscow , Russia
P1 — 52
An application of gold diffusion for defect structure characterization in silicon. O.V. Feklisova, E.B. Yakimov. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
P1 — 53
The electric field stratification in silicon doped by transition metal. V.V. Privezentsev. Institute of Physics & Technology, Russian Academy of Science , Moscow , Russia
October 4th. 2007

Poster session II
Entresol

Defects and Impurities in Semiconductors

 
P2 — 01
Low voltage ultra compact focused ion beam (FIB) column for resolution of 1.5?2 nm. Numerical simulation and prospects. V.A. Zhukov 1 , A.I. Titov 2 . 1.   Institute for Informatics and Automation, Russian Academy of Sciences , St. Petersburg , Russia . 2.  St. Petersburg State Technical University , St. Petersburg , Russia
P2 — 02
PRIVET – Simulator Single Event Upset Rate in Digital Memory Cells Induced by Heavy Ions of Space Environments. G.I. Zebrev 1 , I.  Ishutin 2 , V.S. Anashin 2 1. Department of Microelectronics, Moscow Engineering Physics Institute, Russia . 2. Space Device Engineering Institute (NIIKP), Federal Space Agency, Moscow , Russia
P2 — 03
Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs. O. Zhevnyak, V. Borzdov, A. Borzdov, D. Pozdnyakov, F.F. Komarov. Belarus State University , Minsk , Belarus
P2 — 04
Temperature effect on electron transport in conventional short channel MOSFETs: Monte Carlo simulation. O. Zhevnyak. Belarus State University , Minsk , Belarus
P2 — 05
The numerical modeling and the area optimization of the power DMOSFET. E. Artamonova, A. Balashov, A. Kluchnikov, A. Krasukov, A. Shvetz. Moscow Institute of Electronic Engineering, Moscow , Russia
P2 — 06
Analytical models of field effect transistors with thin channel. A. Khomyakov 1,2 and V. Vyurkov 2 . 1.  Moscow State Institute of Radio Engineering, Electronics and Automatics ( Technical University ), Moscow , Russia . 2.  Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
P2 — 07
Modeling of Powerful GaAs MESFET. A. Shestakov, A. Myasnikov, K. Zhuravlev. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia
P2 — 08
Modeling of Vertical Transistor with Electrically Variable Junctions in ISE TCAD. D.G. Drozdov 2 , I.A. Horin 1 , A.E. Rogozhin 1 , A.G. Vasiliev 1,3 . 1. Institute of Physics and Technology of RAS, Moscow , Russia . 2. Moscow State Institute of Radioengineering, Electronics and Automation (TU), Moscow , Russia . 3. Federal State Unitary Enterprise «SPE Pulsar», Moscow , Russia
P2 — 09
Nanoscale surface topography dynamics during ion beam sputtering. A. Rudy, S. Kaschenko. Yaroslavl State University , Yaroslavl , Russia
P2 — 10
A new model for the copper CMP kinetics. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 3 . 1. Institute for Problems in Mechanics, Russian Academy of Sciences , Russia . 2.  Institute of Physics and Technology, Russian Academy of Sciences , Russia
P2 — 11
Calculation of fast electrons distribution function in diamond film. A. Kozlitin, V. Zheleznov. F.V.Lukin Scientific Research Institute of Physical Problems, Moscow , Russia
P2 — 12
Influence of a spin environment on ESR spectra of a two-spin system. V.V. Privezentsev. Institute of Physics &Technology, RAS, Moscow , Russia

Magnetic Micro- and Nanostructures

P2 — 13

System approach to experimental research of ferroelectric electrophysical properties. Ye. A. Pecherskaya. Penza State University , Penza , Russia

P2 — 14
Magnetic force microscopy investigations of multilayer submicron ferromagnetic particles. A.A. Fraerman, B.A. Gribkov , S.A. Gusev, A.Yu. Klimov, V.L. Mironov, V.V. Rogov, S.N. Vdovichev. Institute for Physics of Microstructures RAS, Nizhny Novgorod , Russia
P2 — 15
Epitaxial Fe films and nanostructures for magnetoelectronics. I.V. Malikov, L.A.  Fomin, V.Yu. Vinnichenko, G.M. Mikhailov. Institute of Microelectronic Technology, Russian Academy of Sciences , Chernogolovka , Russia
P2 — 16
Magnetic anisotropy of thin films ion-beam synthesized in silicon at applied magnetic field. G.G. Gumarov 1,2 , V.Yu. Petukhov 1,2 , N.G. Ivoilov 2 , E.N. Dulov 2 , V.A.  Zhikharev 3 . 1. Laboratory of Radiation Chemistry and Radiobiology, Kazan Physical-Technical Institute of RAS, Kazan , Russia . 2. Physics Faculty, Kazan State University , Kazan , Russia . 3.  Kazan State Technology University , Kazan , Russia
P2 — 17
Ма gnetic structure and magnetoresistance of epitaxial iron microstructures: effects of shape and easy axis of magnetization. L.A.  Fomin, I.V. Malikov, V.Yu. Vinnichenko, G.M. Mikhailov. Institute of Microelectronic Technology, Russian Academy of Sciences , Chernogolovka , Russia
P2 — 18
Structure and electromagnetic properties of FeNi films obtained with ion plasma deposition. Bochkarev V.F., Naumov V.V., Goryachev A.A. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 19
Structural and optical properties of Si/ -FeSi 2 /Si heterostructures fabricated by Fe ion implantation and Si MBE. R.I. Batalov 1 , R.M. Bayazitov 1 , N.G. Galkin 2 , E.A. Chusovitin 2 , D.L. Goroshko 2 , T.S. Shamirzaev 3 , K.S. Zhuravlev 3 . 1. Kazan Physical-Technical Institute of RAS, Kazan , Russia . 2. Institute for Automation and Control Processes of FEB RAS, Vladivostok , Russia . 3.  Institute of Semiconductor Physics of SB RAS, Novosibirsk , Russia
P2 — 20
Magnetostriction of an obliquely magnetized ferromagnetic film. L. Fetisov, S. Danilichev, S. Lebedev, G. Srinivasan. Moscow State Institute of Radio Engineering, Electronics and Automation, Moscow , Russia
P2 — 21
Investigation of re-switching properties of ferromagnetic contacts in Py/Mo microstructures. Vinnichenko V.Yu., Chernykh A.V., Fomin  L.A. , Mikhailov G.M.. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences , Chernogolovka, Moscow Region , Russia
P2 — 22
Polarization switching in epitaxial multiferroic Nd:BiFeO 3 films. M. Kouznetsov 1 , T. Ustyujanin 1 , V. Muhortov 2 . 1. Moscow State Institute of Radioengineering Electronics and Automation, Moscow , Russia 2. South Science Centre of RAS, Rostov-on-Don , Russia

Thin Films and Nanostructures Technologies II

P2 — 23
Creation of nanometer gaps between thin-film metal electrodes by the method of electromigration. A.N. Kuturov, A.S. Stepanov, E.S. Soldatov. Department of Physics, M.V. Lomonosov Moscow State University , Russia
P2 — 24
Formation of thin ZrO 2 layers for nanotransistor gate structures by electron beam evaporation. D.G. Drozdov 2 , V.B. Kopylov 1 , I.A. Khorin 1,2 , A.A. Orlikovsky 1 , A.E. Rogozhin 1 , A.G. Vasiliev 1,3 . 1.  Institute of Physics and Technology of RAS, Moscow , Russia 2. Moscow State Institute of Radioengineering, Electronics and Automation ( Technical University ), Moscow , Russia . 3.  Federal State Unitary Enterprise «SPE Pulsar», Moscow , Russia
P2 — 25
Formation of TiN/CoSi 2 bilayer from Co/Ti/Si structure in a non-isothermal reactor. V. Rudakov, V. Gusev. Institute of physics & technology RAS, Yaroslavl branch, Russia
P2 — 26
Features of evolution of implanted profiles during RTA in non-isothermal reactor. V. Rudakov, A. Victorov, Yu. Denisenko, B. Mochalov, V. Ovcharov. Institute of physics & technology RAS, Yaroslavl branch, Russia
P2 — 27
Deposition process kinetics and structure of SiGe films obtained by LPCVD. Nalivaiko 1  O.Y., Turtsevich 1  A.S., Plebanovich 1  V.I., Gaiduk 2  P.I. 1.   RPC “Integral”, Minsk , Republic of Belarus . 2.  Belorussian State University , Minsk , Republic of Belarus
P2 — 28
Buried layers of a silicate glasses and opportunities of their practical use. S. Krivelevich, M. Gryazev. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 29
Ion-Beam Synthesis of Buried Lead-Silicate Layers in Silicon. Buchin Ed.Yu. , Denisenko Yu.I., Simakin S.G. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 30
Pulsed laser deposition of layers and nanostructures based on cadmium telluride and bismuth. A. Yeremyan, H. Avetisyan, K. Avjyan, G. Vardanyan, A. Khachatryan Institute of Radiophysics and Electronics of NAS of Armenia , Ashtarak , Armenia

Plasma Technologies and Diagnostics

P2 — 31
Effect of quartz window temperature on plasma composition during STI etch. E.   Danilkin 1 ,2,3 , D. Shamiryan 1 , M.R. Baklanov 1 , W. Boullart 1 , G.Y. Krasnikov 2 , N.A. Shelepin 2 , O.P. Gutshin 2 , A.I. Mochalov 3 . 1.  IMEC vzw, Heverlee, Belgium . 2. MIKRON, Moscow , Russia . 3. Moscow Institute of Electronic Technology, Moscow , Russia
P2 — 32
Recombination kinetics of Cl atoms in Cl 2 /X (X = Ar, N 2 , O 2 , H 2 ) plasmas. D. Sitanov, A. Efremov, V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo , Russia .
P2 — 33
An End Point Detection Method on the Base of Induced Current and an Automatic Control Device for an Ion Etching System. S.B. Simakin 1 , G.D. Kuznetsov 2 , E.A. Mitrofanov 1 . 1. The State Federal Unitary Firm “ S.A.  Vekshinsky Scientific Research Institute of Vacuum Technique”;2. Moscow State Institute of Steel and Alloys ( Technical University ), Moscow , Russia
P2 — 34
Pilot Etcher and Bosh Process for Deep Anisotropic MEMS & NEMS Etching. S.N. Averkin 1 , I.I. Amirov 2 , K.V. Rudenko 1 , I.A. Tyurin 1 , A.A. Rylov 1 , Yu.P. Baryshev 1 , V.F. Lukichev 1 , and A.A. Orlikovsky 1 . 1.  Institute of Physics and Technology RAS, Moscow , Russia . 2. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl , Russia
P2 — 35
In situ Bosch Si trenches etching depth control with laser interferometer. O.V. Morozov, A.V. Postnikov, A.N. Kuprijanov. Institute Physics and Technology, Russian Academy of Sciences RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 36
Formation of IV-VI semiconductor nanohillocks using Ar inductively coupled plasma. S.P. Zimin 1 , E.S. Gorlachev 1 , I.I. Amirov 2 . 1.  Yaroslavl State University , Yaroslavl , Russia . 2.  Institute Physics and Technology, Russian Academy of Sciences RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 37
Measurement of atomic hydrogen flow density during GaAs surface cleaning. V.A. Kagadei, E.V. Nefyodtev, D.I. Proskurovski, and S.V. Romanenko. High Current Electronics Institute, Siberian Branch, Russian Academy of Science , Tomsk , Russia
P2 — 38
Ionized metal PVD with a hollow cathode magnetron. N. Poluektov, V. Kharchenko, I.  Kamyschov, Yu. Tsar’gorodsev. Moscow State Forestry University , Mytischi, Moscow Region , Russia
P2 — 39
Low Pressure Radio-Frequency Plasmas in the Nanolayers Formation Processes on the Surface of Construction Materials. I.Sh. Abdullin 1 , V.S. Zheltukhin 2 , I.R. Sagbiev 1 , R.F. Sharafeev 1 . 1.  Kazan State Technological University, Kazan , Russia . 2.  Kazan State University , Kazan , Russia

Micro- and Nanostructure Characterization

P2 — 40
Dynamical diffraction of femtosecond X-ray pulses by deformed crystals. T. Chen. Moscow State Academy of Fine Chemical Technology, Moscow , Russia
P2 — 41
The investigation and development of the test structures for scanning probe microscopy. A. Belov, S. Gavrilov, A. Tihomirov, Yu. Chaplygin and V. Shevyakov. Moscow Institute of Electronic Technology ( Technical University , Moscow , Russia
P2 — 42
Conception of “virtual microscope” and its application in nanometrology. А . Zablotskiy 1 , А . Baturin 1 , V. Bormashov 1 , R. Kadushnikov 2 , N. Shturkin 2 . Moscow Institute of Physics and Technology ( State University ), Moscow , Russia . Company “ SIAMS ”, Ekaterinburg , Russia
P2 — 43
Possibilities of research of porous systems and nanomaterials by method of positron annihilation spectroscopy. 1 Grafutin V.I., 1 Funtikov Yu.V., 2 Kalugin V.V., 2 Nevolin V.K., 1,2 Svetlov-Prokop’ev E.P., 2 Timoshenkov S.P., 1 Zaluzhnyi A.G. 1 .«State Science Centre of the Russian Federation — A.I.Alikhanov Institute for theoretical and experimental physics» , Moscow , Russia . 2. Moscow Institute of Electronic Technology ( Technical University ), Zelenograd, Moscow , Russia
P2 — 44
Fourier transform spectroscopy of pulse signals for the performance investigations of logical elements produced on quantum-well structures. E.V. Glazyrin, I.P. Kazakov, A.L. Karuzskiy, O.A. Klimenco , Yu.A. Mityagin, V.N. Murzin, A.V. Perestronin, A.M. Tskhovrebov. P.N. Lebedev’s Physical Institute, Russian Academy of Sciences , Moscow , Russia
P2 — 45
Capabilities of microinterferometer with digital recording of images for study micro objects with sub nanometer resolution. N. Chkhalo, D. Raskin, N. Salashchenko. Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P2 — 46
Application of high resolution computerized white light interferometry for characterization of MEMS structures. G. Malovichko, V. Kal’nov, K. Rudenko. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
P2 — 47
New approach in the determination of the dependency of surface charge density on semiconductor surface potential based on voltage–capacity analysis of the depletion region of MIS-structures. G.V. Chucheva * , A.G. Zhdan. Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia
P2 — 48
Experimental determination of the potential profile in the insulating layers on the basis of current-voltage characteristics of tunneling MOS diodes. E. Goldman, A. Zhdan, N. Kukharskaya. The Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow Region , Russia
P2 — 49
Investigation of CMOS transistor layers produced using salicide technology by SIMS and AES methods. E. Kirilenko 1 , E. Kouznetsov 2 , A. Kozlitin 1 , E. Rybachek 2 , A.Trifonov 1 . 1.  F.V.Lukin Scientific Research Institute of Physical Problems, Moscow , Russia ; 2. Moscow Institute of Electronic Technology, Research manufacturing complex « Technological Center»
P2 — 50
Deposition process and analysis of SiON thin films obtained by RF magnetron sputtering of silica in the nitrogen ambient. M. Yudichev, S. Shevchuk, Y. Maishev. Insitute of Physics & Technology of RAS (FTIAN), Moscow , Russia
P2 — 51
Synthesis and characterization of Fe 3 Si/MgO structures for spintronics. A. Goikhman 1 , N. Barantsev 1 , Y. Lebedinskii 1 , A. Zenkevich 1 , V. Nevolin 1 , R. Mantovan 2 , M. Georgieva 2 and M. Fanciulli 2 1 Moscow Engineering Physics Institute , Moscow , Russia. 2 Laboratorio Nazionale MDM CNR-INFM, Agrate Brianza (MI), Italy
P2 — 52
Formation of nanosize structures based on iron and cobalt in porous silicon. V.M. Kashkarov, A.S. Lenshin, A.E. Popov, B.L. Agapov. Voronezh State University , Universitetskaya pl. 1, 394006 Voronezh , Russia
P2 — 53
Features of porous anodic titania formation. A.Belov, A.Dronov and M.Nazarkin. Moscow Institute of Electronic Technology ( Technical University ), Russia
P2 — 54
Diagnostics of magnetic micro- and nanoparticles in optical tweezers. A. Zhdanov, I.  Soboleva, A. Fedyanin. Faculty of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia

Delayed Posters

D1 — 01
Effect of gamma-irradiation on reliability and operation characteristics of AlGaN/GaN HEMTs. A.E. Belyaev 1 , R.V. Konakova 1 , S.A.  Vitusevich 2 , B.A. Danilchenko 3 , N.S. Boltovets 4 , Yu.N. Sveshnikov 5 , Z. Bougrioua 6 . 1. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine , Kiev , Ukraine . 2.  Institut fur Bio- und Nanosysteme and CNI – Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, Julich , Germany . 3.  I nstitute of Physics , National Academy of Sciences of Ukraine , Kiev , Ukraine . 4. State Enterprise Research Institute “Orion”, Kiev , Ukraine . 5.   Close Corporation “Elma-Malakhit”, Zelenograd , Russia . 6.  Centre de Recherche sur l’Heteroepitaxie et ses Applications, CNRS, Valbonne, France