Постеры– IC

Стендовые доклады — 2012

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Wednesday, October 3^rd 2012

Entresol

16.30 – 18.30 Poster session I

Simulation and Modeling I

P1-01	*A universal model for single-electron device simulation. I.I. Abramov, A.L. Baranoff, I.A. Romanova, I.Y. Shcherbakova.* Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus .
P1-02	Monte Carlo simulation of charge carrier transport in deep submicron Si MOSFET . *A.V. Borzdov¹, V.M. Borzdov¹, D.V. Pozdnyakov¹, D.S. Speransky¹, V.V. V’yurkov ², A.A. Orlikovsky²* . 1. Belarusian State University, Minsk, Belarus. 2. Institute of Physics and Technology, RAS, Moscow, Russia .
P1-03	Thermal simulating of thin-film SOI MOSFET . *Yu. Chaplygin, А* *. Krasukov, E. Artamonova* . National Research University of Electronic Technology (MIET) Moscow, Russia .
P1-04	*Ultimate sub-threshold slope of Schottky barrier field-effect transistors. Ye. Chaplygin, D. Svintsov, V. Vyurkov, A. Orlikovsky.* Institute of Physics and Technology, RAS, Moscow, Russia .
P1-05	Transient processes in the resonant tunneling diode, taking into account the electron-electron interaction . *V. Elesin¹, I. Kateyev², A. Sukochev¹* . 1. National Research Nuclear University, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .
P1-06	Effect of emitter spacer level of resonant tunneling diode on I-V curves. *V. Elesin, M. Remnev* . National Nuclear Research University “MEPhI”, Moscow, Russia .
P1-07	Gold nanoparticle single-electron transistor simulation . *Y.S. Gerasimov, V.V. Shorokhov, E.S. Soldatov, O.V. Snigirev* . Faculty of Physics, Moscow State University, Moscow, Russia .
P1-08	TCAD analysis of self heating effects in bulk silicon and SOI n-MOSFETs . *K. Petrosyants¹, E. Orekhov², I. Kharitonov¹, D. Popov¹* . 1. Moscow State Institute of Electronics and Mathematics (Technical University), Moscow, Russia. 2. Institute for Design Problems in Microelectronics, RAS, Zelenograd, Moscow, Russia .
P1-09	Terahertz oscillations from nanowires . *A. Pilgun¹, V. Vyurkov¹, L. Fedichkin^1,2, V. Borzdov³, A. Orlikovsky¹* . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Computer company NIX, Moscow, Russia. 3. Belarusian State University, Mink, Belarusia .
P1-10	*Modeling low-volt nanometer merged MOS devices. V. Rakitin.* Scientihic Research Institute of Physical Problems, Moscow, Russia .
P1-11	Nonlinear model of an LDMOS transistor for an RF power amplifier with output power 30 Watt in the frequency range 1.20 — 1.32 GHz. *E.M. Savchenko^1,2, A.S. Budyakov^1,3, A.D. Pershin^1,2, S.M. Romanovsky¹* . 1. FSUE “S&PE “Pulsar”, Moscow , Russia. 2. MSTU MIREA, Moscow. 3. N.E. Bauman MSTU, Moscow, Russia .
P1-12	*Modeling of the silicon complementary bipolar technology process with germanium implantation. E.M. Savchenko^1,2, D.G. Drozdov¹.* 1. FSUE “S&PE “Pulsar”, Moscow, Russia. 2. MSTU MIREA, Moscow, Russia .
P1-13	Tunnel graphene field-effect transistor . *D. Svintsov¹, V. Vyurkov¹, A. Burenkov², R. Oechsner², V. Lukichev¹, A. Orlikovsky¹* . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen, Germany .
P1-14	Numerical model of parallel nano-FET on Coulomb blockade in M₅₅ «magic» crystals . *V.A. Zhukov¹, V.G. Maslov², N.T. Bagraev³* . 1. St. Petersburg Institute of Information Science and Automation, RAS, St. Petersburg, Russia. 2. St. Petersburg National Research University of Information Technologies, Mechanics and Optics , St. Petersburg, Russia, 3. Ioffe Physical Technical Institute, RAS, St. Petersburg, Russia .
P1-15	A model to describe the hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles. V. Stuchinsky, G. Kamaev, M. Efremov, S. Arzhannikova. Institute of Semiconductor Physics, RAS, Novosibirsk, Russia .
P1-16	*MCT photodiodes spectral response. K.O. Boltar^1,2, A.V. Nikonov^1,2, N.I. Iakovleva¹.* 1. State Scientific Center of Russian Federation “RD&P Center ORION”, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Moscow, Russia .
P1-17	Numerical calculations of the concentration profile for InGaAs/GaAs heterostructures with δ-doping layers *. S.V. Khazanova, V.E. Degtyarev.* Lobachevskiy Nizhnii Novgorod University, Nizhni Novgorod, Russia .

Magnetic Micro- and Nanostructures

P1-18	Changing of magnetic properties in magneto-photonic crystals by light influence . *D.E. Afanas’eva¹, A.N. Kuprianov², A.V. Paporkov¹, A.V. Prokaznikov^1,2* . 1. Yaroslavl State University, Institute of Semiconductor Physics, Yaroslavl, Russia. 2. Yaroslavl Branch of the Institute of Physics and Technology, Russia .
P1-19	*Comparative study of ultrathin Co films grown by ion-plasma and magnetron sputtering. V.F. Bochkarev¹, O.S. Trushin¹, V.V. Naumov¹, S.V. Vasiliev², and V.A. Paporkov ²* .** 1. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia. 2. Yaroslavl State University, Yaroslavl, Russia .
P1-20	Fabrication of epitaxial tunnel magnetic junctions Fe/MgO/Fe(001) using pulse laser deposition . *A. Chernikh, V. Vinnechenko, L. Fomin, I. Malikov, and G. Mikhailov* . Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia .
P1-21	Experimental observation and simulation of a spin-polarized current effect on magnetic structure of epitaxial Fe (001) quadratic microstructures . *L.A. Fomin, I.V. Malikov, K.M. Kalach, S.V. Pyatkin, G.M. Mikhailov* . Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia .
P1-22	Size and magnetic anisotropy effect of micromagnetic states in rectangular epitaxial Fe (011) microstructures . *L.A. Fomin, I.V. Malikov, S.V. Pyatkin, G.M. Mikhailov. Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia*.
P1-23	Epitaxial film growth for Fe₃O₄/MgO/Fe (001) tunnel magnetic junctions fabrication . *I.V. Malikov, V.Yu. Vinnichenko, L.A. Fomin, G.M. Mikhailov. Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, Russia*.

Nanomaterials and Nanostructures Technologies

P1-24	Development technology of creation sensor nanomaterials based on ZnO . *O.A. Ageev, E.G Zamburg, Z.E. Vakulov, A.V. Shumov, D.E. Vakulov, M.N. Ivonin, V.V. Ptashnik* . Taganrog Institute of Technology, Sothern Federal University, Taganrog, Russia .
P1-25	Specificity of the synthesis of carbon nanotubes using the combined catalyst *. S. Basaev, V.A. Galperin, A.A. Pavlov, Yu.P. Shaman, A.A. Shamanaev.* Scientific-Manufacturing Complex “Technological Centre”, Moscow, Russia .
P1-26	*Method of fabricating nanopores in silicon wafer via P⁺ and O₂⁺ co-implantation and non-isothermal annealing. Yu.I. Denisenko.* Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .
P1-27	*Investigation of dependence of morphology and fractal characteristics of porous silicon on anodizing conditions. D. Gaev¹, A. Boyko², S. Timoshenkov².* 1. Kabardino-Balkarian State University, Nalchik, Russia. 2. National Research University of Electronic Technology, Moscow, Russia .
P1-28	The study of water s uspensions of nanomaterials containing c arbon nanotubes . *L.P. Ichkitidze* ¹ *, S.V. Selishchev¹, E.V. Blagov², V.A. Galperin³, Y.P. Shaman³, L.V. Tabulina ⁴, B.G. Shulitski⁴* . 1. National Research University of Electronic Technology “MIET” , MIET, Zelenograd, Moscow, Russia. 2. Institute of Nanotechnology of Microelectronics, RAS, Moscow, Russia. 3. Scientific-Manufacturing Complex «Technological Centre”, MIET, Zelenograd, Moscow, Russia. 4. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus .
P1-29	Features of nanostructures formed in solid substrates . *E. Il’ichev, A. Kozlitin, D. Migunov, O. Sakharov, A. Trifonov, G. Petruchin, G. Richkov* . Scientific Research Institute of Physical Problems named after F.V. Lukin, Moscow, Russia .
P1-30	Carbon nanotubes-silicon composite material as anode structure in lithium batteries . *E.P. Kitsyuk¹, V.A. Galperin¹, Y.P. Shaman¹, D.G. Gromov², A.M. Skundin³, E.K. Tuseeva³* . 1. Scientific-M anufacturing Complex «Technological Centre”, Moscow, Russia. 2. National Research University of Electronic Technology, Moscow, Russia. 3. A.N. Frumkin Institute of Physical Chemistry and Electrochemistry RAS, Moscow, Russia .
P1-31	Formation of nanoelectrodes for high temperature single-electron sensors . *A. Parshintsev* *, E. Soldatov* . Department of Physics, Moscow State University, Moscow, Russia .
P1-32	Research of resolution of masking layers of the molybdenum structured on technologies of laser thermochemical record . *S. Poletaev^1,2, O. Moiseev²* . 1. S.P. Korolyov Samara State Aerospace University (National Research University), Samara, Russia. 2. Image Processing Systems Institute, RAS, Samara, Russia .
P1-33	Formation of CNT ordered array, as source of electrons. *A. Shuliatyev* *, D. Gromov, A. Zaycev, A. Shamanaev* . National Research University of Electronic Technology, Zelenograd, Russia .
P1-34	Fabrication of integrated electrodes of molecular transistor electrodes by lithographic techniques and electromigration. *A.S. Stepanov* ¹ *, E.S. Soldatov², O.V. Snigirev²* . 1. Skobeltsyn Institute of Nuclear Physics, M.V. Lomonosov Moscow State University, Moscow, Russia. 2. Department of Physics, M.V. Lomonosov Moscow State University, Moscow, Russia .
P1-35	Narrowing of nanogaps for purpose of molecular single-electronics. *I.V. Sapkov, E.S. Soldatov* . Department of Physics, Moscow State University, Russia.
P1-36	Electron Multiplier on Diamond-Coated Silicon Membrane . *E.A. Il’ichev, A.E. Kuleshov, N.K. Metveeva, G.N. Petrukhin, R.M. Nabiev, G.S. Rychkov. F.V. Lukin State Research Institute of Physical Problems, Zelenograd, Russia*.

Device Structures I

P1-37	Mechanism of sensitivity of a three-collector magnetotransistor . *V.V. Amelichev, A.A. Cheremisinov, S.A. Polomoshnov, R.D. Tikhonov. SMC “Technological Centre” MIET*.
P1-38	The observation of conduction quantization of metallic nanojunctions at normal conditions . *L. Fedichkin^1,2,3, A. Borisov², M. Chernyshev², V. Rubaev². 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. NIX, Moscow, Russia* .
P1-39	The novel THz generation and detection possibilities of resonant-tunneling based semiconductor multiple-quantum well nanostructures . *A.L. Karuzskii, V.V. Kapaev, V.N. Murzin, Yu.A. Mityagin, S.A. Savinov, A.V. Perestoronin, A.M. Tshovrebov, N.A. Volchkov, I.P. Kazakov, V.I. Egorkin, S.S. Shmelev* . P.N. Lebedev Physical Institute of RAS, Moscow, Russia.
P1-40	Suspended silicon single-electron transistor . *V. Krupenin¹, D. Presnov^1,2, S. Amitonov¹, K. Rudenko³, V. Rudakov³* . 1. Laboratory of Cryoelectronics, Moscow State University, Moscow, Russia. 2. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 3. Institute of Physics and Technology, RAS, Moscow, Russia .
P1-41	Optimization of topological parameters of triode with cold cathode based on ordered array of (9,9) carbon nanotubes with open ends .D.V. Pozdnyakov¹, A.V. Borzdov¹, V.M. Borzdov¹, V.A. Labunov².1. Belarusian State University, Minsk, Belarus. 2. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.
P1-42	Experimental and theoretical study of nanowire FET based on SOI . *I.I. Soloviev¹, I.A. Devyatov ¹, P.A. Krutitskiy², S.V. Amitonov³, D.E. Presnov ³, V.A. Krupenin³* . 1. D.V. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 2. M.V. Keldish Institute of Applied Mathematics, Moscow, Russia 3. Physics Faculty, Moscow State University, Moscow, Russia .
P1-43	Instability-driven terahertz emission and injection locking behavior in an asymmetric dual-grating-gate HEMT with a vertical cavity structure . *T. Watanabe, T. Fukushima, Y. Kurita, A. Satou, T. Otsuji. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan*.

Plasma Processing

P1-44	*Formation of 3D high aspect ratio micro- and nanostructures in Si by plasma etching and thermal oxidation. I. Amirov¹, V. Lukichev², M. Izyumov¹, E. Zhikharev², V. Kal’nov².* 1. Yaroslavl Branch of the Institute of Physics and Technology , RAS, Yaroslavl, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .
P1-45	*Kinetic characteristics of electron impact processes in BCl₃. A. Efremov, V. Plotnokov, V. Svettsov.* Ivanovo State University of Chemistry & Technology, Ivanovo, Russia .
P1-46	Plasma emission spectra in CCl₂F₂/Ar gas mixture *. D.B. Murin, V.I. Svettsov, A.M. Efremov, A.E. Leventsov.* Ivanovo State University of Chemical Technology, Ivanovo, Russia .
P1-47	*Poly- and nanocrystalline silicon films formed by PECVD for micro- and nanodevices. E. Gusev, R. Velichko.* Taganrog Institute of Technology – Southern Federal University, Taganrog, Russia .
P1-48	*Etching characteristics and mechanisms of Mo and Al₂O₃ thin films in inductively coupled Cl₂/O ₂/Ar plasmas. K.-H. Kwon¹, K. Kim¹, Y.-H. Ham¹, A. Efremov².* 1. Korea University; Sogamg University. 2. Ivanovo State University of Chemistry & Technology, Russia .
P1-49	Instrumented wafer as a Langmuir multiprobe tool for lateral plasma homogeneity measurements in processing plasma reactors . *A. Miakonkikh, S. Lisovsky, M. Rudenko, K. Rudenko* . Institute of Physics and Technology, RAS, Moscow, Russia .
P1-50	Method of saturable absorber fabrication by PECVD of carbon nanostructures on optical fibers *. A.E. Mironov, S.V. Dubkov, D.G. Gromov.* National Research University of Electronic Technology, Moscow, Russia .
P1-51	*Plasma molding in deep silicon reactive ion etching. O. Morozov.* Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl, Russia .
P1-52	*Investigation of plasma etching of Si and SiO₂ through electron resist ZEP-7000. Yu. Shikolenko¹, A. Antonovich¹, D. Lapin¹, V. Lukichev^1,2.* 1. MSTU MIREA, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

Micro- and Nanostructures Characterization

P1-53	Determination of alloy composition in Ge_xSi_1-x/SiO₂/Si microstructures . *B.Ya. Ber, E.I. Belyakova, D.Yu. Kazanzev, L.S. Kostina, A.N.Smirnov, N.M. Shmidt* . Ioffe Physical Technical Institute, RAS, Petersburg, Russia .
P1-54	*Monitoring of resonant-tunneling diode growth by reflectance anisotropy spectroscopy. I.P. Kazakov.* P.N. Lebedev Physical Institute RAS, Moscow, Russia .
P1-55	*Quality control of SOS structures by means of surface photovoltage. S.V. Kozlov, V.M. Maslovsky.* The company OJSC «Angstrem», Zelenograd, Russia .
P1-56	Effective probe for scanning electron microscope . *Yu.V. Larionov, Yu.A. Novikov. A.M. Prokhorov General Physics Institute, RAS, Moscow, Russia*.
P1-57	Distortion of relief profile of a test object with nanometer sizes due to contamination in SEM. Yu.V. Larionov, Yu.A. Novikov . A.M. Prokhorov General Physics Institute, RAS, Moscow, Russia.
P1-58	An improved detection of the locally doped semiconductor regions with the scanning electron microscope *. N.A. Orlikovsky¹, E.I. Rau², A.M. Tagachenkov³, I.P. Vasyuk⁴.* 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Moscow State University Physical Department, Moscow, Russia. 3. Institute of Nanotechnology and Microelectronics RAS, Moscow, Russia. 4. Kharkov National University, Kharkov, Ukraine .
P1-59	*The development of method for measuring of current density distribution in micro- and nanosystems. I. Rudnev, A. Podlivaev, S. Pokrovskiy, A. Menushenkov.* National Nuclear Research University, «MEPHI», Moscow, Russia .
P1-60	Determination of the content in Al_xGa_1-xAs alloys by secondary ion mass spectrometry *. V.V. Saraykin¹, I.S. Vasil’evskii², A.N. Vinichenko², K.D. Scherbachev³* .** 1. Scientific Research Institute of Physical Problems named after F.V.Lukin, Moscow, Russia. 2. National Research Nuclear University «MEPhI», Moscow, Russia. 3. National University of Science and Technology «MISiS», «Material science and Metallurgy» Center, Moscow, Russia .
P1-61	Atomic force microscopy for line edge roughness measurements . *A. Sosnina, A. Miakonkikh, A. Rogozhin* . Institute of Physics and Technology, RAS, Moscow, Russia .

Thursday, October 4^th 2012

Entresol

16.45 – 18.30 Poster session II

Superconducting Structures and Devices

P2-01	Josephson φ-device based on complex nanostructures with normal metal/ferromagnet bilayer . *S.V. Bakurskiy^1,2, N.V. Klenov¹, T.Yu. Karminskaya², A.A. Golubov³, M.Yu. Kupriyanov ²* . 1. Faculty of Physics, Moscow State University, Moscow, Russia. 2. Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 3. Faculty of Science and Technology, University of Twente, Enschede, Netherlands .
P2-02	Macroscopic quantum effects in transmission of signals along the superconducting microwave slotline. Towards quantum transmission lines . *M.A. Dresvyannikov, A.L. Karuzskii, A.V. Perestoronin, A.M. Tshovrebov, N.A. Volchkov, L.N. Zherikhina. P.N. Lebedev Physical Institute, RAS, Moscow, Russia*.
P2-03	*Manifestation of long-range triplet superconducting correlations in F1-SF1F2-F1 structures. T. Karminskaya¹, M. Kupriyanov¹, A. Golubov².* 1. MSU, Institute of Nuclear Physics, Moscow, Russia. 2. Institute of nanotechnology, University of Twente, Netherlands .
P2-04	Jitter in ballistic read-out circuit based on Josephson transmission line. *I.I. Soloviev* *^1,2* *, N.V. Klenov^1,3, A.L. Pankratov¹, E.V. Il’ichev⁴, L.S. Kuzmin^1,5* . 1. Laboratory of Cryogenic Nanoelectronics, NNSTU, Russia. 2. D.V. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 3. Physics Faculty, Moscow State University, Moscow, Russia. 4. Institute of Photonic Technology, Jena, Germany 5. Chalmers University of Technology, Sweden .
P2-05	Noise in bi-SQUID. *I. Soloviev* ¹ *, N. Klenov², A. Sharafiev², V. Kornev²* . 1. Scobeltsyn Institute of Nuclear Physics, Moscow, Russia. 2. Moscow State University, Physics Department, Moscow, Russia .

Quantum Informatics

P2-06	Adequacy, completeness, and accuracy of quantum measurement protocols . *Yu.I. Bogdanov, A.K. Gavrichenko. Institute of Physics and Technology, RAS, Moscow, Russia*.
P2-0 7	Polarization quantum operations in an anisotropic medium with dispersion . Yu . *I. Bogdanov* ¹ , *A.A. Kalinkin* *^2,3* , *S.P. Kulik* ⁴ , *E.V.* *Moreva* *^2,5* , *V.A. Shershulin* *^1,2,6* . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. International Laser Center of Moscow State University, Moscow, Russia. 3. Zavoisky Physical-Technical Institute, RAS, Kazan, Russia. 4. Faculty of Physics, Moscow State University, Moscow, Russia. 5. National Research Nuclear University «MEPHI», Moscow, Russia. 6. National Research University of Electronic Technology MIET, Moscow, Russia .
P2-0 8	Experimental study of echo effect in polarization transformations of qubits. *Yu.* *Bogdanov* ¹ , *A. Kalinkin* *^2,3* , *S. Kulik* ⁴ , E. *Moreva* *^2,5* , *V. Shershulin* *^1,2,6* . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. International Laser Center of Moscow State University, Moscow, Russia. 3. Zavoisky Physical-Technical Institute RAS, Kazan, Russia. 4. Faculty of Physics, Moscow State University, Moscow, Russia. 5. National Research Nuclear University «MEPHI», Moscow, Russia. 6. National Research University of Electronic Technology MIET, Moscow, Russia .
P2-09	Mathematical modeling of polarization echo in optically anisotropic media. *Yu.I. Bogdanov¹, A.A. Kalinkin^2,3, S.P. Kulik⁴, E.V. Moreva^2,5, V.A. Shershulin ^1,2,6, L.V. Belinsky^1,6* . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. International Laser Center of Moscow State University, Moscow, Russia. 3. Kazan Physical-Technical Institute, RAS, Kazan Russia. 4. Faculty of Physics, Moscow State University, Moscow, Russia. 5. National Research Nuclear University «MEPHI», Moscow, Russia. 6. National Research University of Electronic Technology MIET, Moscow, Russia .
P2-10	*Quantum interferometer with compressed coherent states. A. Karuzskii¹, A. Tskhovrebov¹, V. Prijmachenko², L. Zherikhina¹.* 1. P.N. Lebedev Physical Institute, RAS, Moscow, Russia. 2. Moscow Institute of Physical Engineering .
P2-11	Tradeoff analysis of b allistic detector for Josephson qubits. *N.V. Klenov¹, A.V. Sharafiev¹, V.K. Kornev¹* . Physics Faculty, Moscow State University, Moscow, Russia .
P2-12	Quantum error correction in Si double dot charge qubits. *A. Melnikov^1,2, L. Fedichkin^1,2,3* . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. NIX, Moscow, Russia .
P2-13	Could we believe that the moon is there? *A.V. Nikulov* . Institute of Microelectronics Technology, RAS, Chernogolovka, Russia .
P2-14	Measurement of charge and spin qubits in a transistor channel . *M. Rudenko, V. Vyurkov, S. Filippov, A. Orlikovsky* . Institute of Physics and Technology, RAS, Moscow, Russia .

Device Structures II

P2-15	Atomic force microscopy studies of ferroelectric and electrical properties in epitaxial BaTiO₃/Pt heterostructures . *A. Baturin¹, A. Chouprik¹, K. Bulakh¹, A. Kuzin¹, A. Zenkevich², M. Minnekaev²* . 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 2. National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow, Russia.
P2-16	Formation of Ag clusters for resistive memory cells from thin film. *A. Belov¹, D. Gromov¹, O. Pyatilova¹, O. Sakharov², A. Trifonov²* . 1. National Research University of Electronic Technology MIET, Moscow, Russia. 2. Scientific Research Institute of Physical Problems named after F.V.Lukin, Moscow, Russia .
P2-1 7	Memory cells on the basis of metal-insulator-semiconductor of structure with multilayer dielectric with same nanometer layers . *A.E. Berdnikov, A.A. Popov, A.A. Mironenko, V.D. Chernomordick, A.V. Perminov* . Yaroslavl Branch of Institute of Physics and Technology, RAS, Yaroslavl, Russia .
P2-1 8	A resistive switching effect with memristive behavior in Hf_xAl_1-xO_y layers grown by atomic layer deposition. *A.A. Chouprik¹, K.V. Egorov¹, I.P. Grigal¹, Yu.Yu. Lebedinskii², A.M. Markeev ¹, A.V. Zenkevich²* . 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 2. NRNU Moscow Engineering Physics Institute, Moscow, Russia .
P2-19	Atomic layer deposition of Hf_xAl_1-xO_y dielectric layers for memory devices. *I.P. Grigal* ¹ *, A.A. Chouprik* ¹ *, K.V. Egorov* ¹ *, Yu.Yu. Lebedinskii* ² *, A.M. Markeev* ¹ . 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 2. NRNU Moscow Engineering Physics Institute, Moscow, Russia .
P2-20	Influence of heating on electrical properties and morphology of indium-doped Ge₂Sb₂Te₅ thin films for phase change memory devices. P. Lazarenko¹, S. Kozuykhin², A. Sherchenkov¹, A. Babich¹, A. Vargunin², O. Pyatilova¹ . 1. National Research University of Electronic Technology , Moscow, Russia. 2. Kurnakov Institute of General and Inorganic Chemistry, RAS, Moscow, Russia .
P2-21	*Effect of the moist porous silicon oxide layer on the electrical characteristics of memory cells. V. Levin, V. Mordvintsev, S. Kudryavtsev.* Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .
P2-22	Influence of thermocycling on the properties of Ge-Te system materials for application in nanoscale phase change memory cells *. A. Sherchenkov¹, S. Kozyukhin², M. Michailova¹, A. Babich¹, P. Lazarenko¹* .** 1. National Research University of Electronic Technology. 2. Kurnakov Institute of General and Inorganic Chemistry, RAS .

Lithography Techniques

P2-23	*Formation of nanomask with 10-20 nm elements using self-organizing processes in diblock-copolymers films. M.A. Bruk¹, E.N. Zhikharev², V.A. Kalnov², A.V. Spirin¹, I.I.* А mirov²** . 1. Karpov Institute of Physical Chemistry, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .
P2-24	The new method of image formation by direct electron-beam etching of polymer resist . *M.A. Bruk ¹ , E.N. Zhikharev², D.R. Streltsov¹, V.A. Kalnov², A.V. Spirin¹* . 1. Karpov Institute of Physical Chemistry, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia.
P2-25	*The charging of PMMA-film resist in electron beam lithography. E.N. Evstafjeva, M.A. Knjazev, E.I. Rau, A.A. Svintsov, A.A. Tatarintsev, S.I. Zaitsev.* Institute of Microelectronic Technology and High Purity Materials, RAS, Chernogolovka, Russia .
P2-2 6	Micropattern formation of diamond films *. E.A. Il’ichev, A.E. Kuleshov, N.K. Matveeva, G.N. Petrukhin, R.M. Nabiev, G.S. Rychkov.* F.V. Lukin State Research Institute of Physical Problems, Zelenograd, Russia .

Materials for Photonics and Optoelectronics

P2-2 7	Formation of buried Ge nanocrystals and Cr (Mn) disilicides in Si by combination of ion implantation and MBE methods . *N.G. Galkin¹, E.A. Chusovitin¹, K.N. Galkin¹, S.A. Dotsenko¹, S.V. Vavanova¹ , R.I. Batalov², R.M. Bayazitov²* . 1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok, Russia. 2. Kazan Physical-Technical Institute, Kazan, Russia .
P2-28	Electroluminescence and photovoltage properties of Si-p/ b -FeSi₂ NC/Si-p/Si(100)-n mesa-diodes . *N.G. Galkin¹, E.A. Chusovitin¹, D.L. Goroshko¹, A.V. Shevlyagin¹, T.S. Shamirzaev ²* . 1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok, Russia. 2. Kazan Physical-Technical Institute, Kazan, Russia .
P2-29	Formation and properties of Ca silicide films and Si-Ca silicide-Si double heterostructures on Si(111) substrate . *N.G. Galkin¹, S.A. Dotsenko¹, D.V. Bezbabny², K.N. Galkin¹, D.L. Goroshko¹, R. Kudrawiec³, E. Zielony³, A. Misiewicz³* . 1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladivostok, Russia. 2. Amur State University, Blagoveshchensk, Russia. 3. Institute of Physics, Wroclaw State technical University, Wroclaw, Poland .
P2-30	Hydro chemical deposition method nanofilms ZnS_1-xSe_x . *M.A. Jafarov* *, E.F. Nasirov, S.A. Jahangirova* . Baku State University, Baku, Azerbaijan .
P2-31	Solar sell on the bazis heterojunctions p-CdS/p-CdTe/CdZnS, obtained by chemical deposition . *M.A. Jafarov* *, E.F. Nasirov, S.A. Jahangirova* . Baku State University, Baku, Azerbaijan .
P2-32	STM study of single tetrapod-shaped CdTe and CdTe/CdSe nanocrystal . *A.S. Trifonov* ¹ *, R.B. Vasiliev* ² *, I.S. Ezubchenko* ³ *, M.S. Sokolikova* ² *, D.R. Britov* ⁴ *, D.E. Presnov* ¹ *, O.V. Snigirev* ⁴ . 1. Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russia. 2. Department of Materials Science, Moscow State University, Moscow, Russia. 3. National Research Centre «Kurchatov Institute», Moscow, Russia. 4. Faculty of Physics, M.V.Lomonosov Moscow State University, Moscow, Russia .
P2-33	Luminescent properties of carbon incorporated porous silicon oxide. A. Vasin¹, S. Gordienko¹, A. Rusavsky¹, A. Nazarov¹, V.S. Lysenko¹, Yu. Piryatinski², I. Blonsky², E. Makila³, J.Salonen³, S. Prucnal⁴, L. Rebohle ⁴, W. Skorupa⁴ . 1. Lashkaryov Institute of Semiconductor Physics, Kiev, Ukraine. 2. Institute of Physics, Kiev, Ukraine. 3. Department of Physics, University of Turku, Turku, Finland. 4. Institut fur Ionenstrahlphysik und Materialforschung, Dresden, Germany .

Electronic Materials and Thin Films

P2-34	Germanium substrates for molecular-beam epitaxy . *I.D. Burlakov, A.L.Sizov, N.I. Iakovleva, E.D. Korotaev, A.E. Mirofianchenko* . State Scientific Center of Russian Federation “RD&P Center ORION”, Moscow, Russia .
P2-35	*Direct wafer bonding of SiGe and Si crystalline wafers for high-power bipolar devices and SGOI. I.V. Grekhov¹, L.S. Kostina¹, T.S. Argunova^1,2, E.I. Belyakova¹, N.M. Shmidt ¹_, J.H. Je²* .** 1. Ioffe Physical Technical Institute, RAS, Petersburg, Russia. 2. Pohang University of Science and Technology, Pohang, Republic of Korea .
P2-3 6	Copper germanium alloys formation by the low temperature atomic hydrogen treatment . *A. Kazimirov¹, E. Erofeev², V. Kagadei². 1. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia. 2. Research and Production Company «Micran», Tomsk, Russia* .
P2-3 7	Fabrication and structural study of In_xGa_1-xAs layers on porous GaAs(001) substrates . *A. Lomov¹, J. Grym², D. Nohavica², E. Hulicius³, J. Pangrác³, A. Orehov ⁴, A. Vasiliev⁴* . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Institute of Photonics and Electronics of Academy of Science of Czeh Republic, Prague, Czech Republic. 3. Institute of Physics of Academy of Science of Czeh Republic, Prague, Czech Republic. 4. National Research Centre “Kurchatov Institute”, Moscow, Russia .
P2-38	Conductive Langmuir-Blodgett films based on poly (p-phenylenevinylene) derivates . *N.K. Matveeva, E.A. Ilichev* . Federal State Unitary Enterprise “Research Institute of Physical Problems named after F.V.Lukin”, Zelenograd, Russia .
P2-39	*Features of formation of high-k dielectric layer in the W/ultrathin HfO₂/Si (100) structures under annealing. V. Rudakov, E. Bogoyavlenskaya, Yu. Denisenko, V. Naumov.* Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .
P2-40	Temperature oscillations in a silicon wafer under constant power of incoherent irradiation by heating lamps in a thermal chamber of RTP set up . *V. Rudakov,* *A. Kurenya, V. Ovcharov, V. Prigara. Institute of Physics and Technology, Yaroslavl Branch, RAS, Yaroslavl, Russia*.
P2-41	*Hopping conductivity in Ge-SiO_x-Si structures with Ge nanoclusters. S.V. Kondratenko¹, Yu.N. Kozyrev², M.Yu. Rubezhanska², V.S. Lysenko³, Y.V. Gomeniuk³* .** 1. Taras Shevchenko national University of Kyiv, Ukraine. 2. Chuiko Institute of Surface Chemistry, Kyiv, Ukraine. 3. V. Lashkarev Institute of Semiconductor Physics, NAS of Ukraine, Kiev, Ukraine .

Simulation and Modeling II

P2-42	Modeling the influence of internal mechanical stresses on spatial distribution of oxygen during its precipitation in silicon. *R. Goldstein¹, T. Makhviladze², M. Sarychev²* . 1. Institute for Problems in Mechanics, RAS, Moscow, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia .
P2-43	Modeling the *electromigration and mechanical stresses in conductor lines containing impurities. T. Makhviladze, M. Sarychev.* Institute of Physics and Technology, RAS, Moscow, Russia .
P2-44	The numerical model of simplest FIB on ions of rare gases for nano diagnostics and nano patterning. *V.A. Zhukov¹, N.V. Badenko², P.V. Shpartko²* . 1. St. Petersburg Institute of Information Science and Automation, RAS, St. Petersburg, Russia. 2. St. Petersburg State Polytechnic University , St. Petersburg, Russia .
P2-45	*Molecular dynamics simulations of the low energy Ar ion-plasma sputtering of copper nanostuctures. A. Kupriyanov, O. Trushin, I. Amirov.* Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .
P2-4 6	Mechanisms of strain relief in Cu/Ni(100) heteroepitaxy . *O. Trushin¹, T. Ala-Nissila², S-C.* *Ying³, E. Granato⁴* . 1. Yaroslavl Branch of the Intitute of Physics and Technology, RAS, Yaroslavl, Russia. 2. Aalto University, Helsinki, Finland. 3. Brown University, Providence, USA. 4. Instituto National de Pesquisas Espaciais, Sao Jose dos Campos, SP Brasil .
P2-4 7	Modeling of profile evolution at the low-energy ion sputtering in Ar plasma *. A.S. Shumilov, I.I. Amirov.* Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .

Plasma and Ion Beam Processing

P2-48	Formation of silicon oxide layer on the surface of mono-Si wafer by means of ion beam irradiation . *B. Gurovich, K. Prikhodko, A. Taldenkov, D. Komarov, L. Kutuzov* . National Research Center “Kurchatov Institute”, Moscow, Russia .
P2-49	The quantum-size Si dots formed in PECVD Si/SiO₂multilayers by irradiation with swift heavy ions. G. Kamaev^1,2, S. Cherkova^1,2, A. Antonenko^1,2, G. Kachurin¹, *A. Gismatulin¹,* *D. Marin^1,2, V. Volodin^1,2, A. Cherkov^1,2, V. Skuratov³* . ¹ A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia; ²Novosibirsk State University, Novosibirsk, Russia; ³Joint Institute for Nuclear Research, Dubna, Russia .
P2-50	The study of nanostructures formation on AlSi thin film surface under ion-plasma sputtering . *V. Bachurin, I. Amirov, M. Izyumov, V. Naumov, S. Simakin* . Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia .
P2-51	Efficiency of fast neutral particle beam sources based on gas-phase charge exchange processes *. V.P. Kudrya.* Institute of Physics and Technology, RAS, Moscow, Russia .

Micro- and Nanoelectromechanical Systems and Sensors

P2-52	Piezoelectric generator with filled space between the ZnO nanowires . *D.G. Gromov¹, A.M. Kozmin¹, M.U.Nazarkin¹, S.P.Timoshenkov¹, S.A.Gavrilov¹, A.I.Kozlitin²* . ¹ National Research University of Electronic Technology, Moscow, Russia. ²Joint research center «Synchrotron», Moscow, Russia .
P2-53	Simulation of ZnO piezocantilever deflection for a contact AFM . *E. Gusev, Yu. Eroshina* . Taganrog Institute of Technology – Southern Federal University, Taganrog, Russia .
P2-54	NO₂, CO and CO₂ gas sensor based on magnetron deposited n- and p-type ZnO films . *E. Gusev, A. Mikhno, V. Gamaleev, O. Mironenko* . Taganrog Institute of Technology – Southern Federal University, Taganrog, Russia .
P2-55	The mode matching technology for MEMS gyroscope with mutually spaced eigenfrequences . *O. Morozov¹, A. Postnikov¹, I. Kozin¹, A. Soloviev², A. Tarasov²* . 1. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia. 2. Federal state Unitary Enterprise “Center for Ground-Based Space Infrastructure Facilities Operation”, Moscow, Russia .
P2-5 6	Principal physical and technological problems and technical solutions for creating a new generation of high-temperature microelectromechanical SOIMT strain sensors. L. Sokolov¹, N. Parfenov², S. Igochin³. 1. Branch of MAI (TU) “Strela”, Zhukovsky, Russia. 2. MAI (TU), Moscow, Russia. 3. JSC “Interlab”, Moscow, Russia .
P2-5 7	MEMS angular rate sensors and roll sensors. A. *Timoshenkov, S.M. Naing, D. Daniltsev, V. Kalugin* . National Research University of Electronic Technology, Department of Microelectronics, Moscow, Russia .
P2-58	Technology development for the creation of conformal multilayer wiring boards based on polymers . *A. Titov, Yu. Dolgovykh, K. Tikhonov, S. Timoshenkov. National Research University of Electronic Technology, Department of Microelectronics, Moscow, Russia*.

Стендовые доклады — 2009

By: admin-icmne

On: 02.05.2023

In: Постеры

Posters | Oral Presentations

Wednesday, October 7th 2009

Entresol

16.30 – 18.30 Poster session I

Nanodevices and Nanostructures

P1-01	Determination of electronic properties of molecular objects on the basis of nanodevices transport characteristics. V.A. Malinin, V.V. Shorokhov, E.S. Soldatov. Faculty of Physics, Moscow State University, 119899 Moscow, Russia
P1-02	Highly doped SOI based single-electron transistor: noise characteristics and charge sensitivity. D.E. Presnov1, V.S. Vlasenko2, S.V. Amitonov2, V.A. Krupenin2. 1. Nuclear Physics Institute, Moscow State University, Moscow, Russia 2. Laboratory of Cryoelectronics, Moscow State University, Moscow, Russia
P1-03	Nanocarbon films with electronic conductivity. N.F. Savchenko, M.B. Guseva, V.V. Khvostov, Yu.A. Korobov, A.F. Alexandrov. Physics Department, M.V. Lomonosov Moscow State University, Russia
P1-04	Secondary-emission properties of the carbon films. V.V. Khvostov, M.B. Guseva, N.F. Savchenko, Yu.A. Korobov, N.D. Novikov. Physics Department, M.V. Lomonosov Moscow State University, Moscow, Russia.
P1-05	Investigation of auto-emission diodes with CNT emitters under small inter-electrode distance conditions. S. Orlov1, O. Gushchin1, S. Yanovich1, V. Shyshko1, O. Perveeva1, N. Savinsky2. 1. Mikron JSC, Zelenograd, Russia, 2. Institute of Physics and Technology, Yaroslavl Branch, RAS, Yaroslavl, Russia
P1-06	Design of 3D nano-carbon emitter based autoemission devices. N. Savinski1, M. Gitlin1, A. Shornikov1. 1. Yaroslavl branch of Institute of Physics & Technology,Russian Academy of Sciences, Yaroslavl, Russia
P1-07	ZnO nanorods for device application. O.V. Kononenko 1, A.N. Red’kin 1, A.N. Baranov2, A.N. Panin1, 4, M.V. Shestakov3, V.T. Volkov1, A.I. Il’in1, E.E. Vdovin1 1. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia. 2. Moscow State University, Chemistry Department, Moscow, Russia 3. Moscow State University, Department of Materials Science, Moscow, Russia 4. Quantum-functional Semiconductor Research Center, Department of Physics, Dongguk University, Seoul, Korea.
P1-08	Observation of spin injection in ballistic nanostructures Mo(001)/Py. G.M. Mikhailov, V.Yu. Vinnichenko, A.V. Chernykh, I.V. Malikov, S.V. Piatkin. Institute of microelectronic technology and high purity materials RAS, Chernogolovka, Russia.

Nanostructure Technologies

P1-09	Formation of Voids in Silicon-Based Structures Annealed in Non-Isothermal Reactor. Yu. I. Denisenko. Institute of Physics and Technology, Yaroslavl Branch, RAS, Yaroslavl, Russia
P1-10	Si wires deposition by magnetron sputtering method. *S. Evlashin, N. Suetin, V. Krivchenko.* D.V. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
P1-11	Nanocrystalline silicon on sapphire. D. Pavlov, P. Shilyaev, E. Korotkov, N. Krivulin. University of Nizhniy Novgorod, Nizhniy Novgorod, Russia.
P1-12	Formation of the atomically smooth surface of gold film and the binding of gold nanoparticles on it by the self-assembly method. A.N. Kuturov1, E.S. Soldatov2, L.A. Polyakova3, S.P. Gubin3. 1. P.N. Lebedev Physical Institute of the Russian Academy of Science, Moscow, Russia 2. M.V. Lomonosov Moscow State University, Moscow, Russia, 3. Institute of General Inorganic Chemistry of the Russian Academy of Science, Moscow, Russia
P1-13	LGD-technology of FM/SC hybrid nanostructrures. A.S. Sigov1, A.V. Abramov2, L.A.Bityutskaya3, E.V. Bogatikov3, M.V.Grechkina3, Yu.I. Dikarev3, A.P.Lazarev2, E.A.Pankratova2, V.M.Rubinshtein3, A.V.Tuchin3. 1. MIREA, Moscow, Russia, 2. «Rosbiokvant» Ltd, Voronezh, Russia 3. Voronezh State University, Voronezh, Russia
P1-14	Preparation of electrodes for molecular transistor by focused ion beam. I.V. Sapkov1, V.V. Kolesov2, E.S. Soldatov1 . 1. Department of Physics, Moscow State University, Russia, 2. Kotel’nikov Institute of Radioengineering & Electronics of Russian Academy of Sciences, Moscow, Russia
P1-15	Formation of molecular transistor electrodes by electromigration. A.S. Stepanov1, E.S. Soldatov2, O.V. Snigirev1,2. 1. IMP, RRC “Kurchatov Institute”, Russia, 2. M.V. Lomonosov Moscow State University, Russia
P1-16	PECVD carbon nanostructure formation using DC glow discharge. D.G. Gromov, S.A. Gavrilov, I.S. Chulkov. Moscow Institute of Electronic Technology (Technical University), Zelenograd, Russia

Devices and ICs

P1-17	Physical limitations of reliability in microwave microelectronic devices operating in periodical pulse mode. A.G. Vasiliev, V.F. Sinkevich. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia
P1-18	Principal problems of quality improvement for high-speed planar transmission lines issued from studies of high-Q microstrip resonators. A.P. Chernyaev2, V.A. Dravin1, A.Yu. Golovanov1,2, A.L. Karuzskii1, A.E. Krapivka1, A.N. Lykov1, V. N. Murzin1, A. V. Perestoronin1, A. M. Tskhovrebov1, N. A. Volchkov1. 1. P.N. Lebedev Physical Institute of Russian Academy of Sciences, Moscow, Russia 2. Moscow Institute of Physics and Technology (State University), Dolgoprudny, Russia.
P1-19	Effect of Conductivity Triggering: Studying and Optimization of MOS-like Structures. A.E. Berdnikov, A.A. Popov, A.A. Mironenko, V.D. Chernomordick, A.V. Perminov. Yaroslavl Branch of Institute of Physics & Technology of Russian Academy of Sciences, Russia
P1-20	Design and application features of nonvolatile memory based on ferroelectric thin films. A. Marycheva1, N. Zaitsev2. 1. Moscow Institute of Electronic Engineering (TU), Zelenograd, Russia, 2. Micron Corp., Zelenograd, Russia
P1-21	Research of SONOS non -volatile memory elements. O. Orlov 1, N. Shelepin 1. Mikron JSC, Moscow, Russia
P1-22	Research and optimization of anodic joint process of SOI microelectromechanical strain transducer with glass reference element. L. Sokolov1, N. Parfenov1, S. Timoshenkov2, V. Kalugin2. 1. Moscow Aviation Institute, Moscow, Russia 2. Moscow Institute of Electronic Technology (Technical University), Moscow, Russia.
P1-23	Experimental research of the Magnetotransistor in a double well. A. Kozlov1, Yu. Parmenov1, R. Tikhonov2. 1. Moscow State Institute of Electronic Engineering – Technical University, 2. SMC “Technical University”
P1-24	The amplifier-concentrator of electrons as the base element of the emission electronics. E. Il`ichev, A. Kuleshov, E. Poltoratskii, G. Rychkov. State Research Institute of Physical Problems,Zelenograd, Moscow, Russia
P1-25	Piezoelectric current generator through filamentary nanocrystals of zinc oxide. M. Nazarkin, S. Gavrilov. Moscow Institute of Electronic Technologies (Technical University, Zelenograd, Russia
P1-26	New type of high efficiency power supply of digital units. Y. Chaplygin, V. Losev. Moscow State Institute of Electronic Engineering, Moscow, Russia

Superconducting Structures and Devices

P1-27	The theoretical analysis of electronic thermal properties of the interfaces between multiband superconductors and a normal metal. I.A. Devyatov1, M.Yu. Romashka1, A.V. Semenov2, P.A. Krutitskii3, M.Yu. Kupriyanov1. 1. Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow, Russia, 2. State Pedagogical University, Moscow, Russia, 3. Keldysh Institute for Applied Mathematics, Moscow, Russia
P1-28	Microscopic theory of thermal phase slips in diffuse superconducting wires. A.V. Semenov1, I.A. Devyatov2, P.A. Krutitskii3, M.Yu. Kupriyanov2. 1. Moscow State Pedagogical University, Moscow, Russia, 2. Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russia, 3. Keldysh Institute for Applied Mathematics, Moscow, Russia
P1-29	Characteristics of Nb/?-Si/Nb Josephson junction arrays at frequencies of 68 — 75 GHz. A.L. Gudkov1, A.A. Gogin1, A.I. Kozlov1, A.N. Samys1, I.Ya. Krasnopolin2. 1. CJSC «Compelst», FSUE «SRIPP n. F.V. Lykin», Moscow, Zelenograd, Russia 2. FSUE «VNIIMS», Moscow, Russia
P1-30	Transport properties of josephson junctions with ferromagnetic layers. T.Yu. Karminskaya1, A.A. Golubov2, M.Yu. Kupriyanov1, A.S. Sidorenko3. 1. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 2. Faculty of Science and Technology and MESA+ Institute of Nanotechnology, University of Twente, The Netherlands. 3. Institute of Electronic Engineering and Industrial Technologies Chisinau, Moldova.
P1-31	Bi-SQUID with linear transfer function. V. Kornev1 , I. Soloviev1 , N. Klenov1, O. Mukhanov2. 1. Moscow State University, Moscow, Russia, 2. HYPRES, Elmsford, USA

Photonics and Optoelectronics

P1-32	Modeling of optical integrated circuit of a multiplexer/splitter on a basis of a photonic crystal structure. M. Belkin, K. Kostenko. Moscow State Technical University of Radio-Engineering, Electronics and Automation
P1-33	Computer-aided design of the high-efficient laser module for microwave-band fiber optic systems. M. Belkin, A. Loparev. Moscow State Technical University of Radio-Engineering, Electronics and Automation. Moscow, Russia
P1-34	Numerical methods for calculation of optical properties of layered structures. S.A. Dyakov1,4, V.A. Tolmachev1,2, E.V. Astrova2, S.G. Tikhodeev3, V.Y.Timoshenko4, T.S. Perova1 . 1. Trinity College Dublin, Dublin 2, Ireland. 2. Ioffe Physical Technical Institute, RAS, St. Petersburg, Russia 3. General Physics Institute, RAS, Moscow, Russia. 4. Faculty of Physics, Moscow University, Moscow, Russia.
P1-35	Vertical double range photocell with polysilicon photodiode, volume resonator and a photoelement with isotype potential p+ barrier in the substrate for UV application. I.V. Vanyushin1, V.A. Gergel2, N.M. Gorshkova2, A.G. Klimkovich1. 1. LCC “SensorIС”, Moscow, Russia. 2. Kotel`nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
P1-36	Formation of One-Dimensional Photonic Crystals by Means of Photo-Electrochemical Etching of Silicon. Yu.A. Zharova1, G.V. Fedulova1, E.V. Astrova1, V.A. Ermakov2 and T.S. Perova2. 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St.Petersburg, Russia, 2. Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Ireland
P1-37	Titanium dioxide with carbon nanotubes nanocomposite for new generation solar cells. A. Dronov , S. Gavrilov. Moscow Institute of Electronic Technologies (Technical University), Russia
P1-38	Application of linear-chain carbon nano-films in optoelectronic devices. M.B. Guseva1, P.B. Konstantinov2, Y.A. Kontsevoy2, N.N. Novikov1, A.S. Skrileov2, V.V. Khvostov1, V.V. Chernokozhin2 . 1. Physical faculty of Lomonosov Moscow State University Moscow, Russia, 2. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia
P1-39	Critical temperature of SF and SFS multilayres with arbitrary electron mean free path in F and S films. M.Yu. Kupriyanov1, A.I. Buzdin1, A.A. Golubov2 . 1. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 2. Centre de Physique Moleculaire Optique et Hertzienne, Universite Bordeaux, CNRS, France. 3. Faculty of Science and Technology and MESA+ Institute of Nanotechnology, University of Twente, The Netherlands.
P1-40	Experimental study of differential SQIF-structures. V. Kornev1 , I. Soloviev1 , N. Klenov1, O. Mukhanov2. 1. Moscow State University, Russia, 2. HYPRES, Elmsford, USA
P1-41	Quantum interferometers on multichain of josephson junctions. A. Karuzskiy1, G. Kuleshova2, A. Tshovrebov1, L. Zherikhina1. 1. Lebedev Physical Institute, Russian Academy of Science, Moscow, Russia; 2. Moscow Engineering Physics Institute (State University) , Moscow, Russia

Magnetic Micro- and Nanostructures

P1-42	Propagation of magnetostatic surface waves in ferromagnetic films with variable thickness. Yu.A. Ignatov, V.I. Scheglov, A.A. Klimov, S.A. Nikitov. Kotel’nikov Institute of Radio Engineering and Electronics (IRE RAS), Moscow
P1-43	Modification of magnetic domain structures in Co film using the atomic force microscopy nano-oxidation. A. Bukharaev1,2, D. Biziaev1, P. Borodin1, I. Merkutov2 . 1. Zavoisky Physical Technical Institute of Russian Academy of Sciences, Kazan, Russia, 2. Kazan State University, Kazan, Russia
P1-44	Investigations of magnetic states in multilayer submicron ferromagnetic particles. A.A. Fraerman, B.A. Gribkov, S.A. Gusev, A.Yu. Klimov, V.L. Mironov, V.V. Rogov, S.N.Vdovichev. Institute for physics of microstructures RAS, Nizhny Novgorod, Russia.
P1-45	Fe/MgO/Fe heterostructures on r-sapphire for single-crystal magnetic tunnel junctions. A. Chernykh, V. Vinnichenko, L. Fomin, G. Mikhailov. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia
P1-46	Epitaxial Fe3O4 films for spin valve applications. I.V. Malikov, G.M. Mikhailov. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia.
P1-47	Investigation of domain wall pinning and nanostructures remagnetization of epitaxial Fe structures with use of magnetic force contrast and magnetoresistance measurements. G.M. Mikhailov, V.Yu. Vinnichenko, L.A. Fomin, K.M. Kalach, I.V. Maliko. Institute of microelectronic technology RAS, Chernogolovka, Russia
P1-48	Dependence of two-layer structures Cu/Co magnetoresistance on thickness of copper. V. Naumov. Yaroslavl branch of Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl, Russia.
P1-49	Study of size effect on switching characteristics of spinvalve GMR sensor. O.S. Trushin1 , E.Yu. Buchin1 , V.F. Bochkarev1, N. Barabanova2. 1. Yaroslavl Branch of the Institute of Physics and Technology of Russian Academy of Sciences, Yaroslavl, Russia, 2. Department of Physics, Yaroslavl State University, Yaroslavl, Russia
P1-50	GMR sensor design optimization using micromagnetic simulations. O.S. Trushin1, N. Barabanova2, V.P. Alexeev2 . 1. Yaroslavl Branch of the Institute of Physics and Technology of Russian Academy of Sciences, Yaroslavl, Russia, 2. Department of Physics, Yaroslavl State University, Yaroslavl, Russia
P1-51	Optical and thermal effects in polymers with superparamagnetic impurities. R.M. Aynbinder. Institute of Chemical Technology, Prague, Czekh Republic.
P1-52	Ferromagnetic resonance study of thin Si65Mn35 layer. *S. Kapelnitsky1,2. 1. Russian Research Centre «Kurchatov Institute», Moscow, Russia. 2. Institute of Physics and Technology, Russian Academy of Sciences, Moscow , Russia*

Delayed Posters at Session I

D1-01

Magnetic and thermal properties of nanocomposite GdNiO3 . А.I. Rykova1, V.M. Dmitriev1, E.N. Khatsko1, A.V. Terekhov1 А.S. Cherny1, D.S. Kondrashev1, T. Mydlarz2, A. Zaleski2 , A.D. Shevshenko3, V.M. Uvarov3 . 1. B.I.Verkin Institute for Low Temperature Phys. & Engineering of NASU, Kharkov, Ukraine. 2. International laboratory of high magnetic fields and low temperatures, Wroclaw, Poland, G. V. Kurdyumov Institute for Metal Physics of the NAS of Ukraine, Kyyiv, Ukraine

D1-02

Magnetic properties of system La1-xSmxMnO3 . А.I. Rykova1, E.N. Khatsko1, А.S. Cherny1, T. Mydlarz2, J. Warchulska2 . 1. B.I.Verkin Institute for Low Temperature Phys. & Engineering of NASU, Kharkov, Ukraine 2. International laboratory of high magnetic fields and low temperatures, Wroclaw, Poland

Thursday, October 8th 2009

Entresol

16.45 – 18.30 Poster session II

Simulation and Modeling

P2-01	Calculation of the characteristics of electron transport through molecular clusters. Y.S. Gerasimov1 , V.V. Shorokhov2 , E.S. Soldatov2 , O.V. Snigirev1,2. 1. IMP, RRC “ Kurchatov Institute”, Moscow, Russia, 2. Faculty of Physics, Moscow State University, Moscow, Russia
P2-02	Investigation of segregation effect in InGaAs/GaAs quantum wells by means a computer simulation. A.N. Baryshev, S.V. Khazanova. Nizhni Novgorod University im.N.I.Lobachevskogo, NIzhni Novgorod, Russia
P2-03	Simulation of impurity diffusion at the formation of ultrashallow active areas in silicon-based FET. F. Komarov1, O. Velichko2, A. Mironov1, G. Zayats3, A. Komarov1, V. Tsurko3. 1. Institute of Applied Physics Problems, Minsk, Belarus, 2. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus 3. Institute of Mathematics, Academy of Sciences of Belarus, Minsk, Belarus.
P2-04	Modeling of the interfacial separation work in relation to impurity concentrations in adjoining materials. I. Alekseev, T. Makhviladze, A. Minushev, M. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia.
P2-05	Energetics and atomic mechanisms of strain relaxation in heteroepitaxial systems. O. Trushin1 , J. Jalkanen2 , E. Granato3 , S-C. Ying4, T. Ala-Nissila2. 1. Institute of Physics and Technology of Russian Academy of Sciences, Yaroslavl Branch, Yaroslavl, Russia, 2. Department of Engineering Physics, Helsinki University of Technology, Espoo, Finland, 3. Laboratґorio Associado de Sensores e Materiais, Instituto National de Pesquisas Espaciais, Sao Jose dos Campos, SP, Brazil, 4. Department of Physics, Brown University, Providence, RI 02912, USA
P2-06	Off-lattice self-learning kinetic Monte-Carlo: application to 2D cluster diffusion on metal surfaces. O. Trushin1 , A. Makin2 , T.S. Rahman3. 1. Institute of Physics and Technology of Russian Academy of Sciences, Yaroslavl Branch, Yaroslavl, Russia, 2. Department of Physics, Yaroslavl State University, Yaroslavl, Russia 3. Department of Physics, University of Central Florida, Orlando, FL, USA
P2-07	Nanoobject sizes of defects in porous systems and defective materials according ADAP method. Part I. S.P. Timoshenkov1, E.P. Svetlov-Prokop’ev1,2, V.I. Grafutin 1 1. Moscow Institute of Electronic Technology (Technical University), TU- MIET, Zelenograd, Russia,2. «State Science Centre of the Russian Federation- A.I.Alikhanov Institute for theoretical and experimental physics», Moscow, Russia
P2-08	Nanoobject sizes of defects in porous systems and defective materials according ADAP method. Part II. S.P. Timoshenkov1, E.P. Svetlov-Prokop’ev1,2, V.I. Grafutin 1 1. Moscow Institute of Electronic Technology (Technical University), TU- MIET, Zelenograd, Russia,2. «State Science Centre of the Russian Federation- A.I.Alikhanov Institute for theoretical and experimental physics», Moscow, Russia
P2-09	Calculation of electrophysical parameters of thin undoped GaAs-in-Al2O3 quantum nanowires and single-wall armchair carbon nanotubes. D.V. Pozdnyakov1, A.V. Borzdov1, V.M. Borzdov1, V.A. Labunov2 . 1. Belarusian State University, Minsk, Belarus, 2. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
P2-10	Penetration of quantum-mechanical current density under semi-infinite rectangular potential barrier as the consequence of the interference of the electron waves in semiconductor 2D nanostructures. V.A. Petrov, A.V. Nikitin. Institute of Radio Engineering and Electronics, Russian Academy of Sciences,Moscow, Russia
P2-11	Laser generation in broken-gap heterostructures. I. Semenikhin1, K.A. Chao2, A. Zakharova1. 1. Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia, 2. Department of Physics, Lund University, Lund, Sweden, and Department of Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden
P2-12	Monte Carlo simulation of submicron three-gate MOSFETs. O. Zhevnyak, V. Borzdov , A. Borzdov, D. Speranski. Belarussian State University, Minsk, Belarus
P2-13	SPICE Modeling and TCAD Simulation of Si Vertical Double-Diffused MOSFET. A.V. Sedov1, V.O. Turin1, A.M. Tsyrlov2, G.I. Zebrev3. 1. Orel State Technical University, Orel, Russia, 2. JSC “Proton”, Orel, Russia, 3. National Research Nuclear University “MEPHI”, Moscow, Russia
P2-14	Modeling of HBT with Si1-X-YGeXCY base. K. Petrosjanc, R. Torgovnikov. Moscow State Institute of Electronics and Mathematics, Moscow, Russia
P2-15	Reversible Gate Oxide Defect Recharging in Nanoscale Field Effect Transistors: Charge Annealing, Tunnel Gate Leakage, Random Telegraph Signal and 1/f Noise. G.I. Zebrev, N. Samokhin, D. Batmanova. Micro- and Nanoelectronics Department, National Research Nuclear University “MEPHI”, Moscow, Russia
P2-16	Radiation-Hardening-by-Design with Circuit-Level Modeling of Total Ionizing Dose Effects in Modern CMOS Technologies. M. Gorbunov1 , G. Zebrev2 , P. Osipenko1. 1. Scientific-Research Institute of System Studies, Russian Academy of Sciences, Moscow, Russia 2. Moscow Engineering Physics Institute, Moscow, Russia
P2-17	Specification of model for the multi-cathode quantum vacuum nano-triode on the base of new experimental data. V.A. Zhukov. St. Petersburg Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia
P2-18	The specifics of modeling high-speed integrated amplifiers with high amount of feedback. E.M. Savchenko, A.S. Budyakov. FSUE “Science and Production Enterprise “Pulsar” Moscow, Russia

Thin Films Technologies

P2-19	Formation of Ge/Cu ohmic contacts to n-GaAs with atomic hydrogen pre-annealing step. E. Erofeev1, V. Kagadei2. 1. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia 2. Research and production company “Micran”, Tomsk, Russia.
P2-20	Hf-based barrier layers for Cu-metallization. Denisenko Yu.I.1, Gusev V.N.1, Khorin A.I.1,2, Orlikovsky A.A.1, Rogozhin A.E.1, Rudakov V.I.1, Vasiliev A.G.1,3 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia 2. Moscow State Institute of Radio-engineering, Electronics and Automation, Moscow, Russia, 3. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
P2-21	*Properties of HfO2 films on Si-substrate obtained by electron beam vapor deposition. A.V. Ershov, S.N. Zubkov, V.V. Karzanov, S.V. Khazanova,* О.N. Nikolaeva, D.A. Nikolichev.** Nizhni Novgorod University im.N.I.Lobachevskogo, NIzhni Novgorod, Russia.
P2-22	Some peculiarities in the formation functional films by sol-gel and electrophoretic technologies. N. Korobova1, S. Timoshenkov2 , A. Shabanova3. 1. Kazakh National University, Almaty, Kazakhstan.; 2. Moscow Institute of Electronic Technology, Moscow, Russia, 3. National Engineering Academy, Almaty, Kazakhstan.
P2-23	The peculiarities of creating composite glasses for multilayer structures, MEMS structures included. S. Timoshenkov 1, O. Orlov 2 . 1. Moscow Institute of Electronic Technology, Moscow, Russia, 2. Mikron JSC, Moscow, Russia

Lithography Techniques

P2-24	Electron Beam Lithography using PMMA as negative resist. E.N. Zhikharev, S.N. Averkin, V.A. Kalnov. Institute of Physics and Technology of Russian Academy of Science, Moscow, Russia
P2-25	Application of virtual scanning electron microscope to determine the parameters of atom nanolithograph microlenses. *A. Zablozkiy1, E. Shehin1, A. Kuzin1, A. Baturin1, P. Melentiev2, D. Lapshin2, V. Balykin2 .* 1. Moscow Institute of Physics and Technology, Dolgoprudny, Russia, 2. Institute of Spectroscopy Russian Academy of Sciences, Troitsk , Russia

Ion and Neutral Beam Processing

P2-26	Features of relief formation at silicon surfaces by etching with focused ion beam. N. Gerasimenko1, A. Chamov1,2, E. Novoselova2, V. Khanin2. 1. Moscow Institute for Electronic Engeneering, Moscow, Russia, 2. JSC Mikron, Moscow, Russia.
P2-27	Modification of electrophysical behavior of surface adjacent to FIB milling area. A.A. Chouprik, A.A. Kuzin, A.V. Zablotskiy. Moscow Institute of Physics and Technology, Dolgoprudny, Russia.
P2-28	Formation of buried borosilicate layers by means of ion implantation. A. Churilov, S. Krivelevich, R. Seljukov. Yaroslavl branch of Institute of Physics & Technology, Russian Academy of Sciences, Yaroslavl, Russia
P2-29	Fast atom beam formation of inert and chemically active substances in an extensive source of ions for application in the technological processes. Y. Maishev, S. Shevchuk, T. Matveev. Institute of Physics and Technology RAS, Moscow, Russia.

Plasma Processing

P2-30	Microwave plasma assisted single crystal diamond films growth and its application in microelectronics. A.L. Vikharev1, A.M. Gorbachev1, A.B. Muchnikov1, D.B. Radishev1, A.A. Altukhov2, A.V. Mitenkin2, M.P. Dukhnovsky3, V.E. Zemlyakov3. 1. Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, Russia, 2. ITC «UralAlmazInvest», Moscow, Russia, 3. FSUE «Istok», Fryazino, Russia
P2-31	Plasma damage and restoration of CVD low-k materials. E. Smirnov1,2 , A. Ferchichi2 , L. Zhao2, M.R. Baklanov2. 1. Moscow Institute of Electronic Technology (Technical University), Zelenograd, Russia 2. IMEC, Leuven, Belgium.
P2-32	Optimization of parameters of deep plasma chemical process of silicon etchings for elements MEMS. A.I. Vinogradov, N.M. Zaryankin, Yu.A. Mikhajlov, E.P. Prokopiev, S.P. Timoshenkov. Moscow Institute of Electronic Technology (Technical University), TU- MIET, Zelenograd, Moscow, Russia
P2-33	Formation of periodical nanostructures on semiconductors using solid alumina template. A. Belov, S. Gavrilov, V. Shevyakov. Moscow Institute of Electronic Techologies (Techincal University), Zelenograd, Russia
P2-34	The effect of plasma treatment on the residual stresses of metallic cantilever structures. I.I. Amirov, V.V. Naumov. Yaroslavl branch of the Institute of Physics & Technology, Russian Academy of Sciences,, Yaroslavl, Russia
P2-35	Kinetics of the GaAs etch process in the Cl2 dc glow discharge plasma. A. Dunaev, S. Pivovarenok, A. Efremov, V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia
P2-36	Plasma parameters and composition in HCl/X (X=Cl2, H2, Ar) dc glow discharges. A. Efremov, V. Svettsov, S. Lemehov. Ivanovo State University of Chemistry & Technology, Ivanovo, Russia
P2-37	Emission Tomography Algorithm Optimization: Applications for Microelectronic Plasma Equipment. A.V. Fadeev, K.V. Rudenko, V.F. Lukichev, A.A. Orlikovsky. Lab. of Microstructuring and Submicron Devices, Institute of Physics & Technology, Russian Academy of Sciences, Moscow, Russia

Micro- and Nanostructure Characterization

P2-38	Characterization of GaSb(001) surface under pre-growth processing. M.S. Dunaevskii, E.V. Kunitsina, T.V. L’vova, A.N. Semenov, B.Y. Meltser, J.V. Terentyev. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Saint-Petersburg,, Russia.
P2-39	Measurements samples temperature and dynamics of recrystallization of implanted silicon at rapid thermal processing. Ya. Fattakhov, M. Galyautdinov, B. Farrakhov, M. Zakharov. Kazan Physical Technical Institute of the Russian Academy of Sciences, Kazan, Russia.
P2-40	Features of electron direct tunneling through an ultrathin oxide under the non-stationary depletion of a n-Si surface. G.V. Chucheva, E.I. Goldman, Yu.V. Gulyaev, A.G. Zhdan. The Institute of Radio Engineering and Electronics Russian Academy of Sciences, Fryazino, Russia
P2-41	Investigations of nanostructured porous PbTe films with X-ray diffractometry and reflectometry. S.P. Zimin1, V.M. Vasin1, E.S. Gorlachev2, A.P. Petrakov3, S.V. Shilov3. 1. Yaroslavl State University, Russia, 2. Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Russia, 3. Syktyvkar State University, Russia
P2-42	Relationship between modification of electrophysical properties and structural characteristics in semiconductor nanosized heterostructuresInxAl1-xAs/InyGa1-yAs/InxAl1-xAs/InP. R.M. Imamov1, I.A. Subbotin1, G.B. Galiev2, I.S. Vasil’evsky2, E.A. Klimov2 . 1. Shubnikov Institute of Crystallography RAS, Moscow, Russia. 2. Institute of UHF Semiconductor Electronic, Moscow, Russia
P2-43	Characterization of Polymer Semiconductors with TOF-Sims and FTIR. V. Bachurin1, A. Churilov1, O. Kolesnikov1, A. Rudy2, S. Simakin1. 1. Yaroslavl branch of Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl, Russia, 2. Yaroslavl State University, Yaroslavl, Russia.
P2-44	General mechanism of the electric inactivity of the impurity atoms in chalcogenide vitreous semiconductors. G.A. Bordovsky, R.A. Castro, P.P. Seregin, Y.M. Stepanov. Herzen State Pedagogical University of Russia, Saint-Petersburg, Russia
P2-45	Broadband dielectric spectroscopy of As2Se3 modified layers. N.I. Anisimova, V.A. Bordovsky, R.A. Castro, G.I. Grabko, D.S. Kirbiatev, Y.M. Stepanov. Herzen State Pedagogical University of Russia, Saint-Petersburg, Russia

Delayed Posters at Session II

D2-01	Plasma molding in deep silicon reactive ion etching. O. Morozov. Yaroslavl branch of the Institute of Physics & Technology, RAS, Russia.
D2-02	Integration of the DRIE and deep silicon oxidation technologies for suspended MEMS fabrication using standard silicon wafer. *A. Postnikov 1, O. Morozov1, I. Amirov1 , V. Kalnov2. 1. Yaroslavl branch of the Institute of Physics & Technology, RAS, Yaroslavl, Russia. 2. Institute of Physics & Technology, RAS, Moscow, Russia.*
D2-03	SIMS depth profiling of shallow B, P, As in silicon by using TOF.SIMS5 and CAMECA-IMS4F. *S. G. Simakin, E. V. Potapov, O. N. Kolesnikov. Yaroslavl* Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl, Russia.
D2-04	Low-k silicate films prepared by sol-gel process with thermal decomposition of organic species. *V.A. Vasiljev1, D.S. Seregin1, K.A. Vorotilov1, A.S. Sigov1, A.S. Valeev2 .* 1. Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Russia. 2. JSC Mikron, Zelenograd, Russia.
D2-05	Effect of precursor synthesis on ferroelectric properties of PZT FeRAM elements. *D.S. Seregin, Yu.V. Podgorny, N.M. Kotova, K.A. Vorotilov, A.S. Sigov.* Moscow State Institute of Radioengineering, Electronics and Automation (Technical University), Russia.
D2-06	Model of the p-n junction modulation effect by the magnetic field. Tikhonov R. D. SMC «Technological Centre» MIEE, Moscow, Russia.

Информация о IC MNE 2007 и QI 2007 — Стендовые доклады

By: admin-icmne

On: 28.03.2023

In: Постеры

Стендовые доклады | Устные доклады

ICMNE-2007 AND SYMPOSIUM QI-2007 SCIENTIFIC PROGRAM

(Final Edition)
(Posters)

Download files:
ICMNE-2007 Oral Presentations
ICMNE-2007 Posters
ICMNE-2007 Delayed Posters
QI-2007 Oral Presentations

October 3th. 2007
Poster session I Entresol
Sub-100 nm Lithography
P1 — 01	A plane wave diffraction on a pin-hole in a film with a finite thickness and real electrodynamic properties. *N. Chkhalo, I. Dorofeyev, N. Salashchenko, M. Toropov* . Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P1 — 02	A new source of a reference spherical wave for a point diffraction interferometer. *N. Chkhalo, A. Klimov, D. Raskin, V. Rogov, N. Salashchenko.* Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P1 — 03	Correction of the EUV mirror substrate shape by ion beam. N. Chkhalo, L. Paramonov, A. Pestov, D. Raskin, N. Salashchenko. Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P1 — 04	Investigation of fluorescence on wavelength 13.5 nm of x-ray tube for nanolithograther. N. Chkhalo, I. Zabrodin, I. Kas’kov, E. Kluenkov, A. Pestov, N. Salashchenko. Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P1 — 05	Well-ordered nanostructures fabricated using nanosphere lithography. A.A. Grunin, V.V. Moskalenko, I.V. Soboleva, A.A. Ezhov and A.A. Fedyanin. Faculty of Physics, M.V.Lomonosov Moscow State University , Moscow , Russia
P1 — 06	Mask Image Formation by Electron Beam Deposition from Vapour Phase. M.A. Bruk 1 , E.N. Zhikharev 2 , S.L. Shevchuk 2 , I.A. Volegova 1 , A.V. Spirin 1 , E.N. Teleshov 1 , V.A. Kalnov 2 , Yu.P. Maishev 2 . 1. Karpov Institute of Physical Chemistry, Moscow , Russia . 2. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
Nanodevices and Nanostructures
P1 — 07	Electron Transition Along а n Atomic Chain. *K.K. Satarin, I.K. Gainullin, I.F. Urazgildin.* M.V. Lomonosov Moscow State University , Department of Physics, Moscow , Russia
P1 — 08	One-Dimentional Heterojunctions with Oriented Carbon Layers. N.D. Novikov, M.B. Guseva, V.G. Babaev, V.V. Khvostov. Department of Physics, Moscow State University , Moscow , Russia
P1 — 09	Ultrafast particle probability transfer in quantum chains. A.A. Gorbatsevich, M.A. Panteleev . Moscow Institute of Electronic Technology ( Technical University ), Moscow , Russia
P1 — 10	Correlation mechanism of negative differential resistance in molecular wire. *Yu. B. Kudasov.* Russian Federal Nuclear Center – VNIIEF, Sarov, Nizhni Novgorod region, Russia
P1 — 11	Effects of spatial reproduction at the interference of the electron waves in semiconductor 1D nanostructures with parabolic quantum wells. V.A. Petrov PP PP , A.V. Nikitin. Institute of Radio Engineering and Electronics, RAS, Moscow , Russia
P1 — 12	Macroscopic quantum oscillator in a two-dimensional conductor. *I. Zhilyaev.* Institute of Microelectronics Technology and High-Purity Materials, RAS, Chernogolovka, Moscow Region , Russia
P1 — 13	The Bohr’s quantization in nanostructures. A.V. Nikulov. Institute of Microelectronics Technology, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District , Russia
P1 — 14	Non-volatile electrically reprogrammable memory matrix on self-forming conducting nanostructures with an integrated transistor electric decoupling of cells. *V. Mordvintsev, S. Kudryavtsev V. Levin, L. Tsvetkova.* Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia
P1 — 15	Intersubband optical transitions in InAs/GaSb broken-gap quantum wells. *I. Semenikhin 1 , A. Zakharova 1 , K. Nilsson 2 , K. A. Chao 2 .* 1. Institute of Physics and Technology, RAS, Moscow , Russia 2 . Department of Physics, Lund University , Sweden
P1 — 16	Plasma oscillations in two-dimensional electron-hole systems. S.A. Moskalenko 1 , M.A. Liberman 2 , E.V. Dumanov 1 , A.G. Stefan 1 and M.I. Shmiglyuk 1 . 1. Institute of Applied Physics of the Academy of Sciences of Moldova , Chisinau, Republic of Moldova 2. Departmant of Physics, Uppsala University , Uppsala , Sweden
P1 — 17	On the melting and crystallization of n -dimensional nanostructures. M. N. Magomedov. Institute for Geothermal Problems, Daghestan Scientific Center of the Russian Academy of Sciences , Makhachkala , Russia
Photonics and Optoelectronics
P1 — 18	Two-dimentional photonic crystals for creating Mach-Zehnder micro-interferometers. *A.V. Chetvertukhin 1 , A.A. Ezhov 1 , A.V. Shobukhov 2 , E.D. Mishina 3 , A.A. Zaitsev 3 , A.S. Sigov 3 , A.A. Fedyanin 1 .* 1.Faculty of Physics, Lomonosov Moscow State University , Moscow , Russia . 2.Faculty of Comp. Math. & Cyber., Lomonosov Moscow State University , Moscow , Russia . 3.Moscow Institute of Radioengineering, Electronics and Automation, Moscow , Russia
P1 — 19	Optical properties of subwavelength metal nanostructures. E. Virchenko, A. Zaitsev, V. Valdner. Moscow State Institute of Radioengineering Electronics and Automation, Moscow , Russia
P1 — 20	Plasmonic Chiral Nanostructures with Extraordinary Optical Transmission. *M.R. Shcherbakov 1 , P.P. Vabishchevich 1 , A.A. Zaitsev 2 , A.S. Sigov 2 , V.O. Valdner 2 , A.A. Fedyanin 1 .* 1. Faculty of Physics, Lomonosov Moscow State University , Moscow , Russia . 2. Moscow Institute of Radioengineering, Electronics and Automation, Moscow , Russia
P1 — 21	Surface electromagnetic waves in one-dimensional photonic crystals. *E.M. Murchikova , M.D. Khokhlova, I.V. Soboleva and A.A. Fedyanin.* Faculty of Physics, M.V. Lomonosov Moscow State University , Moscow
P1 — 22	Symmetric Difference Scheme for Two-Dimensional Photonic Crystal Modeling. *A.V. Shobukhov 1 , A.A. Fedyanin 2 .* 1. Faculty of Comp. Math. & Cyber., Lomonosov Moscow State University , Moscow , Russia . 2. Faculty of Physics, Lomonosov Moscow State University , Moscow , Russia
P1 — 23	Micro-scale domain structure formation by e-beam point writing on the Y cut surfaces of LiTaO 3 crystals. L.S.Kokhanchik , D.V.Punegov. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Siences , Chernogolovka , Russia
P1 — 24	Single Photon Current Impulses Statistics of the Small Square Silicon Avalanche Photodiodes in Geiger’s Mode. *I.V. Vanyushin 2 , A.V. Verhovtseva 2 , A.V. Gergel’ 1 , N.M. Gorshkova 1 , V.M. Gontar` 2 , V.A. Zimoglyad 2 , Yu.I. Tishin 2* 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow , Russia.2. LCC “Unique IC`s”, Moscow Russia
P1 — 25	Silicon avalanche photodiodes for particle detection. *I.B. Chistokhin 1 , O.P. Pchelyakov 1 , E.G. Tishkovsky 1 , V.I. Obodnikov 1 , V.V. Maksimov 2 , A.A. Ivanov 2 , E. Gramch 3* . 1. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia . 2. Budker Institute of Nuclear Physics, Russian Academy of Sciences, Novosibirsk , Russi . 3. Dept. Fisica, Universidad de Santiago, Santiago, Chile
P1 — 26	Electro-optical optimization of p-contact to raise efficiency of light -emitting diodes. S. Shapoval, M.Yu. Barabanenkov, V. Sirotkin, L. Saptsova, A. Kovalchuk, V. Zemlyakov * , N. Antonova * , A. Tsasulnikov † , W. Lundin † , E. Zavarin † , A. Sakharov † , V. Ustinov † . Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia . R&D Corporation «Istok», Fryazino, Moscow region, Russia .* † Ioffe Physico-Technical Institute RAS, St. Petersburg , Russia
Devices and ICs
P1 — 27	Radiation Induced Leakage Due to Stochastic Charge Trapping in Isolation Layers of Nanoscale MOSFETs. *G.I. Zebrev, M. S. Gorbunov, V. S. Pershenkov .* Department of Microelectronics, Moscow Engineering Physics Institute, Russia
P1 — 28	Role of Parasitic Bipolar Effect in Modern Partially Depleted SOI CMOS Technologies. *V.E. Shunkov 1 , M.S. Gorbunov 1 , G.I. Zebrev 1 , B.V. Vasilegin 2* . 1. Department of Microelectronics, Moscow Engineering Physics Institute, Russia 2. Science Research Institute for System Study, Russian Academy of Science , Moscow , Russia
P1 — 29	Accelerator Based Facility for Characterization of Single Event Upsets (SEU) and Latchups (SEL) in Digital Electronic Components. V.S. Anashin 1 , V.V. Emelyanov 2 , G.I. Zebrev 3 , I.O. Ishutin 1,3 , N.V. Kuznetsov 4 , B.Yu. Sharkov 5 , Yu.A. Titarenko 5 , V.F. Batyaev 5 , S.P. Borovlev 5 1. SpaceDevice Engineeing Institute, Federal Space Agency, Moscow , Russia . 2. Research Institute of Scientific Instruments, Lytkarino , Russia . 3. Department of Microelectronics, Moscow Engneering Physics Institute, Russia . 4. Institute of Nuclear Physics , Moscow State University , Russia . 5. Institute of Theoretical and Experimental Physics, Moscow , Russia
P1 — 30	5W/mm Gallium Nitride Power HEMT. *A. Vasiliev, A. Dorofeev, Yu. Kolkovsky, V. Minnebaev.* Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia
P1 — 31	Research of the disbalance mechanism of dual collector lateral bipolar magnetotransistor. R.D. Tikhonov 1 , S.A. Polomoshnov 1 , A.V. Kozlov 2 , A.Ju. Krasukov 2 . 1. SMC «Technological Centre» MIEE, Moscow , Zelenograd , Russia . 2. MIET, Moscow , Russia
P1 — 32	The analysis of mismatch of physical and technical parameters of semiconductor devices. *N. Zaitsev 1* *, Y. Brukhova 1 .* 1. Moscow Institute of Electronic Technology, Technical University , Moscow , Russia
P1 — 33	High Efficiency Carbon Fiber Cold Cathode . *Babaev V.G., Khvostov V.V., Guseva M.B., Savchenko N.F., Belokoneva Yu.G.* Department of Physics, Moscow State University , Moscow , Russia
P1 — 34	Multicathode vacuum nanotriode as possible switch for integrated circuits of vacuum nanoelectronics. V.A. Zhukov . Institute for Informatics and Automation, Russian Academy of Sciences , St. Petersburg , Russia
P1 — 35	Portable fuel cells with micro channel silicon application. V.V. Grinko, N.V. Lapin, A.F. Vyatkin. Institute of Microelectronics Technology RAS, Chernogolovka, Moscow District , Russia
P1 — 36	Technology covering solder past with high resolution. Soldering defects. *Timoshenkov S.P., Antonov М.А., Seregin А.V.* Institute of Electronic Technology, Moscow , Russia
Thin Films and Nanostructure Technologies I
P1 — 37	Molecular-beam epitaxy of ultrathin Si films on sapphire. *Pavlov D.A., Shilyaev P.A., Korotkov E.V., Treushnikov M.V.* University of Nizhny Novgorod, Nizhny Novgorod, Russia
P1 — 38	Research and development of technological processes of silicon on insulator structures manufacturing. *V. Kalugin, S. Timoshenkov, Yu. Chaplygin.* Moscow Institute of Electronic Technology ( Technical University ), Moscow , Russia
P1 — 39	Laser Plasma Deposition of thin ZnO films, doped by nitrogen. O.A. Novodvorsky 1 , V.Ya. Panchenko 1 , O.D. Khramova 1 , L.S. Gorbatenko 1 , Ye.A. Cherebilo 1 , G.A. Batishev 1 , C. Wenzel 2 , J.W. Bartha 2 , H. Hiemann 2 , V.T. Bublik 3 , K.D. Chtcherbatchev 3 . 1 Institute on Laser and Information Technologies, Russian Academy of Sciences , Shatura, Moscow Region , Russia . 2 Institute of Semiconductor and Microsystems Technology, University of Technology , Dresden , Germany . 3 Moscow State Institute of Steel and Alloys (TU), Moscow , Russia
P1 — 40	TEM Study of BST Thin Films. *O. Zhigalina 1 , K. Vorotilov 2 , A. Sigov 2 , I. Androsov 2 .* 1. Institute of Crystallography , RAS, Moscow , Russia . 2. State Institute of Radioengineering, Electronics and Automation ( Technical University ), Moscow , Russia
P1 — 41	Films with Regulated Optical and Electrophysical Parameters. A. Akinin 1 ,V. Chernokogin 1 ,Y. Kontsevoy 1 , E. Mitrofanov 2 , V. Pheophilaktov 1 , S. Simakin 2 . 1. Federal State Unitary Enterprise ‘SPE ‘Pulsar’, Moscow , Russia . 2. Federal State Unitary Enterprise ‘Scientific Research Institute of Vacuum Technique named after S.A.Vekshinsky’, Moscow , Russia
P1 — 42	Technology of Multilayer Metallic Thin Films Formation by Electrochemical Deposition Method . *E.Yu. Buchin, E.V. Vaganova, A.V. Prokaznikov .* Institute of Physics & Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
P1 — 43	Studying of the structure of chemical bonds of matrix diamond-like silicon-carbon nanocomposites. A.M. Dodonov, E.A. Skryleva, I.V. Gontar, M.D. Malinkovich, Y.N. Parkhomenko, M.L. Shupegin, A.P. Smirnov. Moscow Institute of Steel and Alloys (Technological university), Moscow , Russia
P1 — 44	T he method of thin metal films adhesion increasing for the lowered dimensions structures. N.L. Kazansky 1 , V.A. Kolpakov 2 , V.D. Paranin 2 , M.S. Polikarpov 2 . 1. Image Processing Systems Institute, Russian Academy of Science, Samara , Russia . 2. Samara State Aerospace University named after S.P. Korolyov, Samara, Russia
P1 — 45	Influence of vacancy clusters on the adhesion properties of interfaces. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 2 . 1. Institute for Problems in Mechanics, RAS, Russia 2. Institute of Physics and Technology, RAS, Russia
P1 — 46	Influence of nanoobjects ( porous and inclusions ) on properties of interfaces of the bonding silicon wafers used for manufacturing of multilayered structures and mems. *1 Timoshenkov S.P., 1 Britkov O.M., 2 Grafutin V.I., 2 Funtikov Yu.V., 1 Kalugin V.V., 1,2 Svetlov-Prokop’ev E.P., 1 Zaluzhnyi A.G.* 1 Moscow Institute of Electronic Technology (Technical University), Zelenograd, Moscow, Russia. 2 «State Science Centre of the Russian Federation — A.I.Alikhanov Institute for theoretical and experimental physics» , Moscow , Russia
Superconducting Structures
P1 — 47	Epitaxial growth of YBCO thin films with unusual orientation. P.B. Mozhaev 1 , J.E. Mozhaeva 1 , J. Bindslev Hansen 2 , C.S. Jacobsen 2 , I.M. Kotelyanskii 3 , V.A. Lusanov 3 . 1. Institute of Physics and Technology, RAS, Moscow , Russia . 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark . 3. Institute of Radio Engineering and Electronics, RAS, Moscow , Russia
P1 — 48	About possibility of use of tunnel junctions as sensors of current states of mesoscopic superconducting structure. *I. Zhilyaev.* Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow Region , Russia
P1 — 49	Consistent microscopic theory for kinetic – inductance detectors. A.Semenov 1 , I. Devyatov 2 . 1. Moscow Pedagogical State University , Moscow , Russia . 2. Lomonosov Moscow State University, Skobelitsyn Institute of Nuclear Physics, Moscow , Russia
P1 — 50	Single Flux Quantum Pulse Amplifier. *V. K. Kornev 1 , I. I. Soloviev 1 , N. V. Klenov 1 , and O. A. Mukhanov 2 .* 1. Department of Physics, Moscow State University , Moscow , Russia . 2. HYPRES, Inc., Elmsford , NY , USA
Defects and Impurities in Semiconductors
P1 — 51	SIMS application for manganese clusters detection in silicon. *A. Trifonov, V. Saraykin.* Scientific Research Institute of Physical Problems named after F.V.Lukin, Moscow , Russia
P1 — 52	An application of gold diffusion for defect structure characterization in silicon. O.V. Feklisova, E.B. Yakimov. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia
P1 — 53	The electric field stratification in silicon doped by transition metal. V.V. Privezentsev. Institute of Physics & Technology, Russian Academy of Science , Moscow , Russia
October 4th. 2007
Poster session II Entresol
Defects and Impurities in Semiconductors
P2 — 01	Low voltage ultra compact focused ion beam (FIB) column for resolution of 1.5?2 nm. Numerical simulation and prospects. *V.A. Zhukov 1 , A.I. Titov 2 .* 1. Institute for Informatics and Automation, Russian Academy of Sciences , St. Petersburg , Russia . 2. St. Petersburg State Technical University , St. Petersburg , Russia
P2 — 02	PRIVET – Simulator Single Event Upset Rate in Digital Memory Cells Induced by Heavy Ions of Space Environments. *G.I. Zebrev 1 , I. Ishutin 2 , V.S. Anashin 2* . 1. Department of Microelectronics, Moscow Engineering Physics Institute, Russia . 2. Space Device Engineering Institute (NIIKP), Federal Space Agency, Moscow , Russia
P2 — 03	Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs. O. Zhevnyak, V. Borzdov, A. Borzdov, D. Pozdnyakov, F.F. Komarov. Belarus State University , Minsk , Belarus
P2 — 04	Temperature effect on electron transport in conventional short channel MOSFETs: Monte Carlo simulation. O. Zhevnyak. Belarus State University , Minsk , Belarus
P2 — 05	The numerical modeling and the area optimization of the power DMOSFET. *E. Artamonova, A. Balashov, A. Kluchnikov, A. Krasukov, A. Shvetz.* Moscow Institute of Electronic Engineering, Moscow , Russia
P2 — 06	Analytical models of field effect transistors with thin channel. A. Khomyakov 1,2 and V. Vyurkov 2 . 1. Moscow State Institute of Radio Engineering, Electronics and Automatics ( Technical University ), Moscow , Russia . 2. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
P2 — 07	Modeling of Powerful GaAs MESFET. *A. Shestakov, A. Myasnikov, K. Zhuravlev.* Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia
P2 — 08	Modeling of Vertical Transistor with Electrically Variable Junctions in ISE TCAD. *D.G. Drozdov 2 , I.A. Horin 1 , A.E. Rogozhin 1 , A.G. Vasiliev 1,3 .* 1. Institute of Physics and Technology of RAS, Moscow , Russia . 2. Moscow State Institute of Radioengineering, Electronics and Automation (TU), Moscow , Russia . 3. Federal State Unitary Enterprise «SPE Pulsar», Moscow , Russia
P2 — 09	Nanoscale surface topography dynamics during ion beam sputtering. *A. Rudy, S. Kaschenko.* Yaroslavl State University , Yaroslavl , Russia
P2 — 10	A new model for the copper CMP kinetics. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 3 . 1. Institute for Problems in Mechanics, Russian Academy of Sciences , Russia . 2. Institute of Physics and Technology, Russian Academy of Sciences , Russia
P2 — 11	Calculation of fast electrons distribution function in diamond film. *A. Kozlitin, V. Zheleznov.* F.V.Lukin Scientific Research Institute of Physical Problems, Moscow , Russia
P2 — 12	Influence of a spin environment on ESR spectra of a two-spin system. V.V. Privezentsev. Institute of Physics &Technology, RAS, Moscow , Russia
Magnetic Micro- and Nanostructures
P2 — 13	System approach to experimental research of ferroelectric electrophysical properties. *Ye. A. Pecherskaya.* Penza State University , Penza , Russia
P2 — 14	Magnetic force microscopy investigations of multilayer submicron ferromagnetic particles. A.A. Fraerman, B.A. Gribkov , S.A. Gusev, A.Yu. Klimov, V.L. Mironov, V.V. Rogov, S.N. Vdovichev. Institute for Physics of Microstructures RAS, Nizhny Novgorod , Russia
P2 — 15	Epitaxial Fe films and nanostructures for magnetoelectronics. I.V. Malikov, L.A. Fomin, V.Yu. Vinnichenko, G.M. Mikhailov. Institute of Microelectronic Technology, Russian Academy of Sciences , Chernogolovka , Russia
P2 — 16	Magnetic anisotropy of thin films ion-beam synthesized in silicon at applied magnetic field. *G.G. Gumarov 1,2 , V.Yu. Petukhov 1,2 , N.G. Ivoilov 2 , E.N. Dulov 2 , V.A. Zhikharev 3 .* 1. Laboratory of Radiation Chemistry and Radiobiology, Kazan Physical-Technical Institute of RAS, Kazan , Russia . 2. Physics Faculty, Kazan State University , Kazan , Russia . 3. Kazan State Technology University , Kazan , Russia
P2 — 17	Ма gnetic structure and magnetoresistance of epitaxial iron microstructures: effects of shape and easy axis of magnetization. L.A. Fomin, I.V. Malikov, V.Yu. Vinnichenko, G.M. Mikhailov. Institute of Microelectronic Technology, Russian Academy of Sciences , Chernogolovka , Russia
P2 — 18	Structure and electromagnetic properties of FeNi films obtained with ion plasma deposition. Bochkarev V.F., Naumov V.V., Goryachev A.A. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 19	Structural and optical properties of Si/ b -FeSi 2 /Si heterostructures fabricated by Fe ion implantation and Si MBE. R.I. Batalov 1 , R.M. Bayazitov 1 , N.G. Galkin 2 , E.A. Chusovitin 2 , D.L. Goroshko 2 , T.S. Shamirzaev 3 , K.S. Zhuravlev 3 . 1. Kazan Physical-Technical Institute of RAS, Kazan , Russia . 2. Institute for Automation and Control Processes of FEB RAS, Vladivostok , Russia . 3. Institute of Semiconductor Physics of SB RAS, Novosibirsk , Russia
P2 — 20	Magnetostriction of an obliquely magnetized ferromagnetic film. L. Fetisov, S. Danilichev, S. Lebedev, G. Srinivasan. Moscow State Institute of Radio Engineering, Electronics and Automation, Moscow , Russia
P2 — 21	Investigation of re-switching properties of ferromagnetic contacts in Py/Mo microstructures. *Vinnichenko V.Yu., Chernykh A.V., Fomin L.A. , Mikhailov G.M..* Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences , Chernogolovka, Moscow Region , Russia
P2 — 22	Polarization switching in epitaxial multiferroic Nd:BiFeO 3 films. *M. Kouznetsov 1 , T. Ustyujanin 1 , V. Muhortov 2 .* 1. Moscow State Institute of Radioengineering Electronics and Automation, Moscow , Russia . 2. South Science Centre of RAS, Rostov-on-Don , Russia
Thin Films and Nanostructures Technologies II
P2 — 23	Creation of nanometer gaps between thin-film metal electrodes by the method of electromigration. A.N. Kuturov, A.S. Stepanov, E.S. Soldatov. Department of Physics, M.V. Lomonosov Moscow State University , Russia
P2 — 24	Formation of thin ZrO 2 layers for nanotransistor gate structures by electron beam evaporation. *D.G. Drozdov 2 , V.B. Kopylov 1 , I.A. Khorin 1,2 , A.A. Orlikovsky 1 , A.E. Rogozhin 1 , A.G. Vasiliev 1,3 .* 1. Institute of Physics and Technology of RAS, Moscow , Russia 2. Moscow State Institute of Radioengineering, Electronics and Automation ( Technical University ), Moscow , Russia . 3. Federal State Unitary Enterprise «SPE Pulsar», Moscow , Russia
P2 — 25	Formation of TiN/CoSi 2 bilayer from Co/Ti/Si structure in a non-isothermal reactor. V. Rudakov, V. Gusev. Institute of physics & technology RAS, Yaroslavl branch, Russia
P2 — 26	Features of evolution of implanted profiles during RTA in non-isothermal reactor. V. Rudakov, A. Victorov, Yu. Denisenko, B. Mochalov, V. Ovcharov. Institute of physics & technology RAS, Yaroslavl branch, Russia
P2 — 27	Deposition process kinetics and structure of SiGe films obtained by LPCVD. Nalivaiko 1 O.Y., Turtsevich 1 A.S., Plebanovich 1 V.I., Gaiduk 2 P.I. 1. RPC “Integral”, Minsk , Republic of Belarus . 2. Belorussian State University , Minsk , Republic of Belarus
P2 — 28	Buried layers of a silicate glasses and opportunities of their practical use. S. Krivelevich, M. Gryazev. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 29	Ion-Beam Synthesis of Buried Lead-Silicate Layers in Silicon. Buchin Ed.Yu. , Denisenko Yu.I., Simakin S.G. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 30	Pulsed laser deposition of layers and nanostructures based on cadmium telluride and bismuth. *A. Yeremyan, H. Avetisyan, K. Avjyan, G. Vardanyan, A. Khachatryan* . Institute of Radiophysics and Electronics of NAS of Armenia , Ashtarak , Armenia
Plasma Technologies and Diagnostics
P2 — 31	Effect of quartz window temperature on plasma composition during STI etch. E. Danilkin 1 ,2,3 , D. Shamiryan 1 , M.R. Baklanov 1 , W. Boullart 1 , G.Y. Krasnikov 2 , N.A. Shelepin 2 , O.P. Gutshin 2 , A.I. Mochalov 3 . 1. IMEC vzw, Heverlee, Belgium . 2. MIKRON, Moscow , Russia . 3. Moscow Institute of Electronic Technology, Moscow , Russia
P2 — 32	*Recombination kinetics of Cl atoms in Cl 2 /X (X = Ar, N 2 , O 2 , H 2 ) plasmas.* D. Sitanov, A. Efremov, V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo , Russia .
P2 — 33	An End Point Detection Method on the Base of Induced Current and an Automatic Control Device for an Ion Etching System. S.B. Simakin 1 , G.D. Kuznetsov 2 , E.A. Mitrofanov 1 . 1. The State Federal Unitary Firm “ S.A. Vekshinsky Scientific Research Institute of Vacuum Technique”;2. Moscow State Institute of Steel and Alloys ( Technical University ), Moscow , Russia
P2 — 34	Pilot Etcher and Bosh Process for Deep Anisotropic MEMS & NEMS Etching. S.N. Averkin 1 , I.I. Amirov 2 , K.V. Rudenko 1 , I.A. Tyurin 1 , A.A. Rylov 1 , Yu.P. Baryshev 1 , V.F. Lukichev 1 , and A.A. Orlikovsky 1 . 1. Institute of Physics and Technology RAS, Moscow , Russia . 2. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl , Russia
P2 — 35	In situ Bosch Si trenches etching depth control with laser interferometer. O.V. Morozov, A.V. Postnikov, A.N. Kuprijanov. Institute Physics and Technology, Russian Academy of Sciences RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 36	Formation of IV-VI semiconductor nanohillocks using Ar inductively coupled plasma. S.P. Zimin 1 , E.S. Gorlachev 1 , I.I. Amirov 2 . 1. Yaroslavl State University , Yaroslavl , Russia . 2. Institute Physics and Technology, Russian Academy of Sciences RAS, Yaroslavl Branch, Yaroslavl , Russia
P2 — 37	Measurement of atomic hydrogen flow density during GaAs surface cleaning. V.A. Kagadei, E.V. Nefyodtev, D.I. Proskurovski, and S.V. Romanenko. High Current Electronics Institute, Siberian Branch, Russian Academy of Science , Tomsk , Russia
P2 — 38	Ionized metal PVD with a hollow cathode magnetron. N. Poluektov, V. Kharchenko, I. Kamyschov, Yu. Tsar’gorodsev. Moscow State Forestry University , Mytischi, Moscow Region , Russia
P2 — 39	Low Pressure Radio-Frequency Plasmas in the Nanolayers Formation Processes on the Surface of Construction Materials. I.Sh. Abdullin 1 , V.S. Zheltukhin 2 , I.R. Sagbiev 1 , R.F. Sharafeev 1 . 1. Kazan State Technological University, Kazan , Russia . 2. Kazan State University , Kazan , Russia
Micro- and Nanostructure Characterization
P2 — 40	Dynamical diffraction of femtosecond X-ray pulses by deformed crystals. *T. Chen.* Moscow State Academy of Fine Chemical Technology, Moscow , Russia
P2 — 41	The investigation and development of the test structures for scanning probe microscopy. *A. Belov, S. Gavrilov, A. Tihomirov, Yu. Chaplygin and V. Shevyakov.* Moscow Institute of Electronic Technology ( Technical University ) , Moscow , Russia
P2 — 42	Conception of “virtual microscope” and its application in nanometrology. А . Zablotskiy 1 , А . Baturin 1 , V. Bormashov 1 , R. Kadushnikov 2 , N. Shturkin 2 . 1 Moscow Institute of Physics and Technology ( State University ), Moscow , Russia . 2 Company “ SIAMS ”, Ekaterinburg , Russia
P2 — 43	Possibilities of research of porous systems and nanomaterials by method of positron annihilation spectroscopy. *1 Grafutin V.I., 1 Funtikov Yu.V., 2 Kalugin V.V., 2 Nevolin V.K., 1,2 Svetlov-Prokop’ev E.P., 2 Timoshenkov S.P., 1 Zaluzhnyi A.G.* 1 .«State Science Centre of the Russian Federation — A.I.Alikhanov Institute for theoretical and experimental physics» , Moscow , Russia . 2. Moscow Institute of Electronic Technology ( Technical University ), Zelenograd, Moscow , Russia
P2 — 44	Fourier transform spectroscopy of pulse signals for the performance investigations of logical elements produced on quantum-well structures. E.V. Glazyrin, I.P. Kazakov, A.L. Karuzskiy, O.A. Klimenco , Yu.A. Mityagin, V.N. Murzin, A.V. Perestronin, A.M. Tskhovrebov. P.N. Lebedev’s Physical Institute, Russian Academy of Sciences , Moscow , Russia
P2 — 45	Capabilities of microinterferometer with digital recording of images for study micro objects with sub nanometer resolution. *N. Chkhalo, D. Raskin, N. Salashchenko.* Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia
P2 — 46	Application of high resolution computerized white light interferometry for characterization of MEMS structures. *G. Malovichko, V. Kal’nov, K. Rudenko.* Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia
P2 — 47	New approach in the determination of the dependency of surface charge density on semiconductor surface potential based on voltage–capacity analysis of the depletion region of MIS-structures. **G.V. Chucheva , A.G. Zhdan.*** Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia
P2 — 48	Experimental determination of the potential profile in the insulating layers on the basis of current-voltage characteristics of tunneling MOS diodes. E. Goldman, A. Zhdan, N. Kukharskaya. The Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow Region , Russia
P2 — 49	Investigation of CMOS transistor layers produced using salicide technology by SIMS and AES methods. *E. Kirilenko 1 , E. Kouznetsov 2 , A. Kozlitin 1 , E. Rybachek 2 , A.Trifonov 1 .* 1. F.V.Lukin Scientific Research Institute of Physical Problems, Moscow , Russia ; 2. Moscow Institute of Electronic Technology, Research manufacturing complex « Technological Center»
P2 — 50	Deposition process and analysis of SiON thin films obtained by RF magnetron sputtering of silica in the nitrogen ambient. M. Yudichev, S. Shevchuk, Y. Maishev. Insitute of Physics & Technology of RAS (FTIAN), Moscow , Russia
P2 — 51	Synthesis and characterization of Fe 3 Si/MgO structures for spintronics. A. Goikhman 1 , N. Barantsev 1 , Y. Lebedinskii 1 , A. Zenkevich 1 , V. Nevolin 1 , R. Mantovan 2 , M. Georgieva 2 and M. Fanciulli 2 . 1 Moscow Engineering Physics Institute , Moscow , Russia. 2 Laboratorio Nazionale MDM CNR-INFM, Agrate Brianza (MI), Italy
P2 — 52	Formation of nanosize structures based on iron and cobalt in porous silicon. V.M. Kashkarov, A.S. Lenshin, A.E. Popov, B.L. Agapov. Voronezh State University , Universitetskaya pl. 1, 394006 Voronezh , Russia
P2 — 53	Features of porous anodic titania formation. *A.Belov, A.Dronov and M.Nazarkin.* Moscow Institute of Electronic Technology ( Technical University ), Russia
P2 — 54	Diagnostics of magnetic micro- and nanoparticles in optical tweezers. *A. Zhdanov, I. Soboleva, A. Fedyanin.* Faculty of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia
Delayed Posters
D1 — 01	Effect of gamma-irradiation on reliability and operation characteristics of AlGaN/GaN HEMTs. *A.E. Belyaev 1 , R.V. Konakova 1 , S.A. Vitusevich 2 , B.A. Danilchenko 3 , N.S. Boltovets 4 , Yu.N. Sveshnikov 5 , Z. Bougrioua 6 .* 1. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine , Kiev , Ukraine . 2. Institut fur Bio- und Nanosysteme and CNI – Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, Julich , Germany . 3. I nstitute of Physics , National Academy of Sciences of Ukraine , Kiev , Ukraine . 4. State Enterprise Research Institute “Orion”, Kiev , Ukraine . 5. Close Corporation “Elma-Malakhit”, Zelenograd , Russia . 6. Centre de Recherche sur l’Heteroepitaxie et ses Applications, CNRS, Valbonne, France

Постеры

Wednesday, October 3rd 2012

Simulation and Modeling I

Magnetic Micro- and Nanostructures

Nanomaterials and Nanostructures Technologies

Device Structures I

Plasma Processing

Micro- and Nanostructures Characterization

Thursday, October 4th 2012

Superconducting Structures and Devices

Quantum Informatics

Device Structures II

Lithography Techniques

Materials for Photonics and Optoelectronics

Electronic Materials and Thin Films

Simulation and Modeling II

Plasma and Ion Beam Processing

Micro- and Nanoelectromechanical Systems and Sensors

Wednesday, October 7th 2009

Nanodevices and Nanostructures

Nanostructure Technologies

Devices and ICs

Superconducting Structures and Devices

Photonics and Optoelectronics

Magnetic Micro- and Nanostructures

Delayed Posters at Session I

Thursday, October 8th 2009

Simulation and Modeling

Thin Films Technologies

Lithography Techniques

Ion and Neutral Beam Processing

Plasma Processing

Micro- and Nanostructure Characterization

Delayed Posters at Session II

ICMNE-2007 AND SYMPOSIUM QI-2007 SCIENTIFIC PROGRAM

Wednesday, October 3^rd 2012

Thursday, October 4^th 2012